US2603693A - Semiconductor signal translating device - Google Patents

Semiconductor signal translating device Download PDF

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Publication number
US2603693A
US2603693A US189387A US18938750A US2603693A US 2603693 A US2603693 A US 2603693A US 189387 A US189387 A US 189387A US 18938750 A US18938750 A US 18938750A US 2603693 A US2603693 A US 2603693A
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Prior art keywords
signal translating
translating device
base
emitter
semiconductor
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Expired - Lifetime
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US189387A
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Reymond J Kircher
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AT&T Corp
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Bell Telephone Laboratories Inc
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Priority to BE506280D priority Critical patent/BE506280A/xx
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US189387A priority patent/US2603693A/en
Priority to FR1037516D priority patent/FR1037516A/en
Priority to GB23245/51A priority patent/GB704912A/en
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Publication of US2603693A publication Critical patent/US2603693A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component

Definitions

  • Devices of this type comprise, in general, a body of semic'onductive material for example germanium, a pair of connections, for'example point contacts, designated the emitter andcol- 1ector, to the body, and a third substantially ohmic connection, referred to as the base, to the body.
  • a body of semic'onductive material for example germanium
  • a pair of connections, for'example point contacts designated the emitter andcol- 1ector
  • the base to the body.
  • Electrodes of sign opposite that of thosenormally in excess in the body are injected at the emitter and flow to the collector wherebyamplified replicas of input signals impressed between. the emitter and base, appear in a load. circuit connected between thecollector and base.
  • the semiconductive body may be of either ,conductivity type, that is N or P-type.
  • Onegeneral object of this invention is to improve the performance of semi-conductor signal translating devices such as amplifiers. More specific objects of this invention areto' enhance the stability of such devices and to increasethe uniformity of product in the manufacture of; the devices.
  • l 1 ,It has been determined that ins'tablity of ideof the .typefhereinabove' referred this at: to 'the' sporadic .gjen eration forinjection of carriersv in or intoijithe body. byv mechanisms jdistinct from the emitter tributabl'e' in many cases andlthat" one source of such unwanted carriers is at the base connection. Specifical1y,,'at the base connection in a device.
  • holes may be injected into the body from the base electrode and these 'deleteriously effect the functioning of the device.
  • .electrons may be injecte d into the ,body from the base with consequent degradation of the performance charac: teristics ofthe device.
  • donor impurity is introduced into the :surface portion of the body to which thebase connection is made, thereby to make, aregion-yofthe body contiguous with the base electrode; more. strongly N.-type than the bulk of the body.
  • ' donor impurity may be introduced, forexamplc, by utilizing a tin-antimony solder for afiixing the base electrode to the body orfby plating the surface with antimony and. affixing thebase electrode to the plated surface under conditions effecting diffusion of the antimony into. the body.
  • FIG. 1 depicts a semiconductor amplifier illus-. trative of one embodiment of thisinventloni; and I 3'- .Fig. 2 is 1 a sectionalview to an enlarged-scale ia t on Q1.
  • di;- mensions of; the semiconductive j body have: been greatly exaggerated.
  • the signal translating device illustrated in Fig. 1 comprises a body' 10 .of semiconductive material, for ex-. ample of germaniumor silicon, ofeither con-.- ductivity type.
  • the germanium material may 5 connected to said body, and means comprising an acceptor material in excess of that in the bulk of said body defining a barrier at the junction of said base electrode and said body. 7
  • a signal translating device comprisin a body of N-conductivity type germanium, emitter and collector connections to said body, a base. electrode, and a solder containing a donor imconnection to said region.
  • a signal translating device comprising a body of P-conductivity type germanium having at one surface thereof a region containing acceptor impurity in excess of that in the bulk of Number 6, the body, emitter and collector connections to said body at points spaced from said region, and a base connection to said region.
  • a signal translating device comprising a body of N-conductivity type germanium having at one face thereof a region containing antimony and of greater donor impurity concentration than the bulk of said body, a base connection to said region, and emitter and collector connections to the opposite face of said body.

Description

y 15, 1952 R. J. KIRCHER 2,603,693
SEMICONDUCTOR SIGNAL TRANSLATING DEVICE Filed Oct. 10, 1950 FIG./
SEMICONDUCTOR /6 13 \METAL J- lN l/E N TOR R. .4 K/RCHER ATTORNEY Patented July 15, 1952 ,fUNITED STATE C SEMICONDUCTOR SIGNAL TRANSLATING DEVICE Summit, N. J., assig'nor aboratories, Incorporated,
Iteymond J. Kireher,
to Bell Telephone L Y., a corporation of New York New York, N;
Application October 10, 1950, Serial No.-189,387 I.
8 Claims. (01. 115-366) #This invention relates to semiconductor si nal translating devices and more particularly to semi-conductor amplifiers of the type disclosed in the application Serial No. 33,466, filed June 17, 1948, of-J. Bardeen and W. H. Brattain, now Patent 2,524,035, granted October 3, 1950.
Devices of this type comprise, in general, a body of semic'onductive material for example germanium, a pair of connections, for'example point contacts, designated the emitter andcol- 1ector, to the body, and a third substantially ohmic connection, referred to as the base, to the body. .Electrical carriers of sign opposite that of thosenormally in excess in the body are injected at the emitter and flow to the collector wherebyamplified replicas of input signals impressed between. the emitter and base, appear in a load. circuit connected between thecollector and base. .The semiconductive body may be of either ,conductivity type, that is N or P-type. As .is knowngeach type is associated with impurities characteristic thereof, specifically excess donor impurities'in the case of N-type material and excess acceptor impurities in the case of P-type material. If the body is of N-type, the carriers normally in excess in the bulk thereof are "electronsand the. carriers injected .at the emitter are holes- On the other hand, if the body 'is of P-typ e, the carriers normally in excess" in the bulk-thereof are holes and the injected carriers are electrons. l ---It .has beenfound that in such devices the operating. characteristics may vary from unit to unit and that, further, individual units are subject to instability as evidenced by oscillatory phenomena. i I g Onegeneral object of this invention is to improve the performance of semi-conductor signal translating devices such as amplifiers. More specific objects of this invention areto' enhance the stability of such devices and to increasethe uniformity of product in the manufacture of; the devices. l 1 ,It has been determined that ins'tablity of ideof the .typefhereinabove' referred this at: to 'the' sporadic .gjen eration forinjection of carriersv in or intoijithe body. byv mechanisms jdistinct from the emitter tributabl'e' in many cases andlthat" one source of such unwanted carriers is at the base connection. Specifical1y,,'at the base connection in a device. embodying an'N-conductivity type semiconductor body, holesmay be injected into the body from the base electrode and these 'deleteriously effect the functioning of the device. Similarly, in devices including a P-conductivity type body,.electrons may be injecte d into the ,body from the base with consequent degradation of the performance charac: teristics ofthe device. r
In accordance with one feature of this. inven-. tion, such emission or injection of carriers at the base connection is substantially inhibited. This is effected by establishing between the base electrode and the semiconductive body a barrier to the flow into the semiconductor body from the base electrode of,carriers of the sign like that of those introduced intentionally at the emitter, that is of thesign opposite that of those normally in excess of the body. .Such abarrier is created by producing at the body-electrode interface a region or zone in which the .concentration of impurity characteristic of-the conductivity type of the body is greater than that in thebulkof thebody. 1
In one specific embodiment of this invention wherein the body is of N-conductivity type, a
donor impurity is introduced into the :surface portion of the body to which thebase connection is made, thereby to make, aregion-yofthe body contiguous with the base electrode; more. strongly N.-type than the bulk of the body. The
' donor impurity may be introduced, forexamplc, by utilizing a tin-antimony solder for afiixing the base electrode to the body orfby plating the surface with antimony and. affixing thebase electrode to the plated surface under conditions effecting diffusion of the antimony into. the body. The, invention :and the above-noted and other features thereof --yvill be understood more clearly and fully from the following detailed descrip: tion with reference to the accompanying draw:
am-whi Fig. 1 depicts a semiconductor amplifier illus-. trative of one embodiment of thisinventloni; and I 3'- .Fig. 2 is 1 a sectionalview to an enlarged-scale ia t on Q1. v mp i e se i c o s uc u .11; x 1 z In the;drawing, for the sake of clarity, di;- mensions of; the semiconductive j body have: been greatly exaggerated. In a, typical-device, the
em e n u five. y st n 100. 5.0 aside'and about 12 milsthick. I Referring now to the drawing, the signal translating device illustrated in Fig. 1 comprises a body' 10 .of semiconductive material, for ex-. ample of germaniumor silicon, ofeither con-.- ductivity type. The germanium material may 5 connected to said body, and means comprising an acceptor material in excess of that in the bulk of said body defining a barrier at the junction of said base electrode and said body. 7
5. A signal translating device comprisin a body of N-conductivity type germanium, emitter and collector connections to said body, a base. electrode, and a solder containing a donor imconnection to said region.
7. A signal translating device comprising a body of P-conductivity type germanium having at one surface thereof a region containing acceptor impurity in excess of that in the bulk of Number 6, the body, emitter and collector connections to said body at points spaced from said region, and a base connection to said region.
8. A signal translating device comprising a body of N-conductivity type germanium having at one face thereof a region containing antimony and of greater donor impurity concentration than the bulk of said body, a base connection to said region, and emitter and collector connections to the opposite face of said body.
' REYMOND J. KIRCHER.
REFERENCES CITED The following'references are of record in the file of this patent:
UNITED STATES PATENTS Name Date 2,524,035 Bardeen et al. Oct. 3, 1950
US189387A 1950-10-10 1950-10-10 Semiconductor signal translating device Expired - Lifetime US2603693A (en)

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BE506280D BE506280A (en) 1950-10-10
US189387A US2603693A (en) 1950-10-10 1950-10-10 Semiconductor signal translating device
FR1037516D FR1037516A (en) 1950-10-10 1951-05-25 Semiconductor devices
GB23245/51A GB704912A (en) 1950-10-10 1951-10-05 Semiconductor electric signal translating devices

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Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2689930A (en) * 1952-12-30 1954-09-21 Gen Electric Semiconductor current control device
US2733390A (en) * 1952-06-25 1956-01-31 scanlon
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US2757323A (en) * 1952-02-07 1956-07-31 Gen Electric Full wave asymmetrical semi-conductor devices
US2761800A (en) * 1955-05-02 1956-09-04 Rca Corp Method of forming p-n junctions in n-type germanium
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
US2785095A (en) * 1953-04-01 1957-03-12 Rca Corp Semi-conductor devices and methods of making same
DE1005194B (en) * 1953-05-22 1957-03-28 Rca Corp Area transistor
US2787745A (en) * 1951-12-20 1957-04-02 Int Standard Electric Corp Counter electrode for dry disk type rectifiers
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
US2811682A (en) * 1954-03-05 1957-10-29 Bell Telephone Labor Inc Silicon power rectifier
DE967259C (en) * 1952-11-18 1957-10-31 Gen Electric Area transistor
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US2837448A (en) * 1953-10-26 1958-06-03 Bell Telephone Labor Inc Method of fabricating semiconductor pn junctions
DE1032407B (en) * 1955-09-29 1958-06-19 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement and method for its production
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US2857296A (en) * 1955-08-04 1958-10-21 Gen Electric Co Ltd Methods of forming a junction in a semiconductor
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
US2865794A (en) * 1954-12-01 1958-12-23 Philips Corp Semi-conductor device with telluride containing ohmic contact and method of forming the same
US2867732A (en) * 1953-05-14 1959-01-06 Ibm Current multiplication transistors and method of producing same
US2867899A (en) * 1953-06-26 1959-01-13 Itt Method of soldering germanium diodes
US2868683A (en) * 1954-07-21 1959-01-13 Philips Corp Semi-conductive device
US2874341A (en) * 1954-11-30 1959-02-17 Bell Telephone Labor Inc Ohmic contacts to silicon bodies
US2879457A (en) * 1954-10-28 1959-03-24 Raytheon Mfg Co Ohmic semiconductor contact
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2916806A (en) * 1957-01-02 1959-12-15 Bell Telephone Labor Inc Plating method
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
US2930108A (en) * 1956-05-04 1960-03-29 Philco Corp Method for fabricating semiconductive devices
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same
US2960418A (en) * 1954-06-29 1960-11-15 Gen Electric Semiconductor device and method for fabricating same
US3012305A (en) * 1956-06-07 1961-12-12 Licentia Gmbh Electrically unsymmetrically conductive system and method for producing same
US3076253A (en) * 1955-03-10 1963-02-05 Texas Instruments Inc Materials for and methods of manufacturing semiconductor devices
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
DE1153460B (en) * 1959-01-28 1963-08-29 Siemens Ag Method for manufacturing and contacting a semiconductor device
DE976402C (en) * 1952-07-29 1963-12-19 Licentia Gmbh Electrically asymmetrically conductive system with a semiconductor body made of germanium or silicon containing a barrier layer
US3226608A (en) * 1959-06-24 1965-12-28 Gen Electric Liquid metal electrical connection
US3322516A (en) * 1963-03-05 1967-05-30 Philips Corp Method of coating p-type germanium with antimony, lead or alloys thereof by electrodeposition and product thereof
DE1262388B (en) * 1960-09-20 1968-03-07 Gen Dynamics Corp Method for generating a non-rectifying transition between an electrode and a doped thermo-electrical semiconductor for a thermoelectric device
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
US4380114A (en) * 1979-04-11 1983-04-19 Teccor Electronics, Inc. Method of making a semiconductor switching device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282240A (en) * 1961-12-04

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
US2787745A (en) * 1951-12-20 1957-04-02 Int Standard Electric Corp Counter electrode for dry disk type rectifiers
US2757323A (en) * 1952-02-07 1956-07-31 Gen Electric Full wave asymmetrical semi-conductor devices
US2733390A (en) * 1952-06-25 1956-01-31 scanlon
DE976402C (en) * 1952-07-29 1963-12-19 Licentia Gmbh Electrically asymmetrically conductive system with a semiconductor body made of germanium or silicon containing a barrier layer
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
DE967259C (en) * 1952-11-18 1957-10-31 Gen Electric Area transistor
US2689930A (en) * 1952-12-30 1954-09-21 Gen Electric Semiconductor current control device
US2859394A (en) * 1953-02-27 1958-11-04 Sylvania Electric Prod Fabrication of semiconductor devices
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
US2785095A (en) * 1953-04-01 1957-03-12 Rca Corp Semi-conductor devices and methods of making same
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
US2867732A (en) * 1953-05-14 1959-01-06 Ibm Current multiplication transistors and method of producing same
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
DE1005194B (en) * 1953-05-22 1957-03-28 Rca Corp Area transistor
US2867899A (en) * 1953-06-26 1959-01-13 Itt Method of soldering germanium diodes
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
US2837448A (en) * 1953-10-26 1958-06-03 Bell Telephone Labor Inc Method of fabricating semiconductor pn junctions
US2811682A (en) * 1954-03-05 1957-10-29 Bell Telephone Labor Inc Silicon power rectifier
DE1033786B (en) * 1954-03-05 1958-07-10 Western Electric Co Method of manufacturing a silicon rectifier
US2960418A (en) * 1954-06-29 1960-11-15 Gen Electric Semiconductor device and method for fabricating same
US2868683A (en) * 1954-07-21 1959-01-13 Philips Corp Semi-conductive device
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2879457A (en) * 1954-10-28 1959-03-24 Raytheon Mfg Co Ohmic semiconductor contact
US2874341A (en) * 1954-11-30 1959-02-17 Bell Telephone Labor Inc Ohmic contacts to silicon bodies
US2865794A (en) * 1954-12-01 1958-12-23 Philips Corp Semi-conductor device with telluride containing ohmic contact and method of forming the same
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US3076253A (en) * 1955-03-10 1963-02-05 Texas Instruments Inc Materials for and methods of manufacturing semiconductor devices
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
US2761800A (en) * 1955-05-02 1956-09-04 Rca Corp Method of forming p-n junctions in n-type germanium
US2909715A (en) * 1955-05-23 1959-10-20 Texas Instruments Inc Base contacts for transistors
US2857296A (en) * 1955-08-04 1958-10-21 Gen Electric Co Ltd Methods of forming a junction in a semiconductor
DE1032407B (en) * 1955-09-29 1958-06-19 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement and method for its production
US2930108A (en) * 1956-05-04 1960-03-29 Philco Corp Method for fabricating semiconductive devices
US3012305A (en) * 1956-06-07 1961-12-12 Licentia Gmbh Electrically unsymmetrically conductive system and method for producing same
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
US2916806A (en) * 1957-01-02 1959-12-15 Bell Telephone Labor Inc Plating method
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same
US3085310A (en) * 1958-12-12 1963-04-16 Ibm Semiconductor device
DE1153460B (en) * 1959-01-28 1963-08-29 Siemens Ag Method for manufacturing and contacting a semiconductor device
US3226608A (en) * 1959-06-24 1965-12-28 Gen Electric Liquid metal electrical connection
DE1262388B (en) * 1960-09-20 1968-03-07 Gen Dynamics Corp Method for generating a non-rectifying transition between an electrode and a doped thermo-electrical semiconductor for a thermoelectric device
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GB704912A (en) 1954-03-03
BE506280A (en)
FR1037516A (en) 1953-09-17

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