US20150247879A1 - Acceleration sensor - Google Patents
Acceleration sensor Download PDFInfo
- Publication number
- US20150247879A1 US20150247879A1 US14/195,214 US201414195214A US2015247879A1 US 20150247879 A1 US20150247879 A1 US 20150247879A1 US 201414195214 A US201414195214 A US 201414195214A US 2015247879 A1 US2015247879 A1 US 2015247879A1
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- United States
- Prior art keywords
- pressure sensing
- sensing structure
- acceleration sensor
- inertial mass
- membrane
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
Abstract
Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (BEOL). In other cases, a membrane may have a bent, undulated or winded shape. In yet other embodiments, an inertial mass may span two or more pressure sensing structures.
Description
- The present application relates to acceleration sensors and to corresponding methods.
- Acceleration sensors are used for many applications, for example in the automotive field. In some embodiments, acceleration sensors may simply be used as “wake up sensors” to detect when a vehicle like an automobile starts moving or reaches a certain speed and to activate other sensors or components in response to the detection of the movement via an acceleration.
- In some cases, acceleration sensors may be needed together with pressure sensors, for example for tire pressure monitoring system (TPMS) applications. In some conventional realizations of such a sensor combination, the pressure sensor and the acceleration sensor are manufactured separately, or are integrated using separate structures, for example differently structured micro-electro-mechanical systems (MEMS) parts formed within a wafer.
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FIG. 1 is a block diagram of an acceleration sensor according to an embodiment. -
FIG. 2 is a method for manufacturing an acceleration sensor according to an embodiment. -
FIGS. 3A and 3B show schematic cross-sectional views of a pressure sensor which may form the basis of an acceleration sensor according to an embodiment. -
FIG. 4 shows a schematic cross-sectional view of an acceleration sensor according to an embodiment manufactured on the basis of the pressure sensor ofFIGS. 3A and 3B . -
FIG. 5 shows a schematic cross-sectional view of an acceleration sensor according to an embodiment. -
FIG. 6 shows a schematic cross-sectional view of an acceleration sensor according to a further embodiment. - In the following, various illustrative embodiments will be described in detail with reference to the attached drawings. It should be noted that these embodiments serve only as examples and are not to be construed as limiting.
- For instance, while embodiments may be described comprising a plurality of features or elements, in other embodiments some of these features or elements may be omitted and/or replaced by alternative elements. Also, in some embodiments, additional features or elements apart from the ones shown and described may be implemented. Features or elements from different embodiments may be combined with each other unless specifically noted otherwise.
- Any directional terminology is merely used to easily indicate parts or directions in the figures and does not imply a specific orientation of implementations of embodiments.
- Fabrication of integrated circuits or other semiconductor devices is often categorized into at least two phases, comprising front-end-of-line (FEOL) and back-end-of-line (BEOL). After BEOL there additionally may be a backend process, also referred to as post fab. FEOL as used in this application may designate a first phase of fabrication where individual devices, for example transistors (including e.g. gate formation), capacitors, resistors and/or mechanical structures for micro-electro-mechanical systems (MEMS) are patterned in a semiconductor wafer. FEOL therefore may cover everything up to but not including the deposition of metal interconnect layers. For example, for manufacturing CMOS elements, FEOL may comprise selecting a type of wafer to be used, chemical-mechanical planarization and cleaning of the wafer, shallow trench isolation, well formation, gate module formation and source and drain module formation.
- BEOL as used herein is a second phase of fabrication which generally begins for example when the first layer of metal is deposited on the semiconductor wafer. BEOL includes formation of contacts, isolating layers (e.g. oxides or nitrides), metal layers and bonding sides for chip to package connection. For example, in some processes up to ten metal layers may be added in the BEOL, although depending on the process also less metal layers may be used.
- Therefore, FEOL and BEOL are well-defined technical terms, and for a person skilled in the art it is clear which parts of a given device are manufactured in FEOL and which parts are manufactured in BEOL.
- In some embodiments, an acceleration sensor comprises a wafer, the wafer comprising a pressure sensing structure formed therein, and an inertial mass formed in BEOL, i.e. a BEOL structure, disposed over the sensing structure. The sensing structure in embodiments may comprise a membrane.
- In some embodiments, the wafer comprising the sensing structure, without the inertial mass, would be operable as a pressure sensor.
- In some embodiments, an inertial mass may be disposed spanning at least two pressure sensing structures, e.g. membranes, formed on or in a wafer. The inertial mass may be an inertial mass formed in BEOL. With such an embodiment, acceleration parallel to a plane (e.g. surface) of the wafer may be sensed.
- In still other embodiments, an inertial mass is provided above a membrane. At least one portion of the membrane outside the inertial mass may have a winded, bent or undulated shape. In some embodiments, through the winding, bending or undulating a sensitivity may be increased.
- In some embodiments, together with forming the acceleration sensor e.g. during FEOL and BEOL, other devices, for example circuits, may be formed in and/or on a same wafer and integrated with the acceleration sensor. For example, one or more further sensors, e.g. a pressure sensor, and/or circuitry, e.g. circuitry to control and/or read the acceleration sensor, may be integrated with the acceleration sensor in this way in some embodiments.
- The above-described embodiments may be combined with each other, but may also be used separately from each other.
- Further embodiments will now be discussed referring to the figures.
- In
FIG. 1 , a cross-sectional view of an acceleration sensor (e.g. an accelerometer) according to an embodiment is shown. The acceleration sensor ofFIG. 1 comprises awafer 10, for example a semiconductor wafer like a silicon wafer. A wafer as used herein may be used interchangeably with the term “substrate” and generally refers to an essentially planar or plate-like material in or upon which structures, e.g. semiconductor device structures, may be formed.Wafer 10 in the embodiment ofFIG. 1 has apressure sensing structure 11 formed therein. In some embodiments,pressure sensing structure 11 may comprise a membrane or any other pressure-sensitive structure. In one embodimentpressure sensing structure 11 may be at least partly manufactured in FEOL. - On top of
wafer 10 ofFIG. 1 , BEOL layers, i.e. layers manufactured during BEOL, are provided. These layers may, for example, comprise one or more metal layers like a copper layer, for example dual damascene copper layers, or aluminum layers, and/or may comprise one or more dielectric layers like oxide layers or nitride layers. An overall thickness of the BEOL layers may be in the order of some micrometers, for example, between 1 μm and 15 μm. In the embodiment ofFIG. 1 , the BEOL layer has been structured to separate a part serving as aninertial mass 12 from aremaining BEOL layer 13 bygaps 14. Any conventional structuring techniques may be used. For example, a mask may be provided prior to depositing the BEOL layer. - When the acceleration sensor of
FIG. 1 is accelerated in a direction perpendicular to a surface of wafer 10 (direction as indicated by an arrow 14),inertial mass 12 exerts pressure onpressure sensing structure 11 or removes pressure frompressure sensing structure 11 depending on the direction of acceleration. For example, when the accelerometer is accelerated in an upward direction inFIG. 1 , a pressure onsensing structure 11 increases, while with an acceleration in the opposite direction pressure decreases due to the inertia ofinertial mass 12. This change in pressure may be detected bypressure sensing structure 11, thus detecting an acceleration. - It should be noted that the term “acceleration perpendicular to the wafer surface” also comprises acceleration where only a component is perpendicular to the wafer surface.
- In some embodiments, a pressure sensor using
pressure sensing structure 11 may be modified to become an acceleration sensor by providinginertial mass 12. In some embodiments, therefore essentially the same process may be used for forming a pressure sensor and for forming the acceleration sensor of the embodiment ofFIG. 1 . An embodiment illustrating this concept further will be discussed later with reference toFIGS. 3 and 4 . - In
FIG. 2 , a method according to an embodiment is shown. The method ofFIG. 2 may, for example, be used to manufacture the acceleration sensor ofFIG. 1 , but may also be used to form other kinds of acceleration sensors, for example, acceleration sensors as will be explained later with reference toFIGS. 3-6 , but not limited thereto. - At 20, one or more pressure sensing structures are formed in a wafer. For example, a pressure sensing structure using a membrane may be formed.
- At 21, during BEOL an inertial mass is formed on the pressure sensing structure. In some embodiments, the inertial mass may be formed on a single pressure sensing structure. As will be explained later, in some embodiments the inertial mass may also span two or more sensing structures in order to provide the possibility to sense acceleration in a direction parallel to a surface of the wafer (e.g. acceleration or acceleration components perpendicular to
arrow 14 ofFIG. 1 ). In some embodiments, the inertial mass may also be formed in a different manufacturing phase than BEOL. - Next, with reference to
FIGS. 3 and 4 an embodiment will be explained where a pressure sensor is modified to become an acceleration sensor. First, with reference toFIGS. 3A and 3B , the structure of the pressure sensor will be explained, and then with reference toFIG. 4 an acceleration sensor according to an embodiment will be discussed in detail. - In
FIG. 3A , a schematic cross-sectional view of a pressure sensor is shown.FIG. 3B shows an enlarged view of some parts of the pressure sensor. - The pressure sensor of
FIGS. 3A and 3B comprises awafer 30 in which structures for sensing pressure have been formed. The structures comprise amembrane 31 which is separated from further portions and structures formed inwafer 30 by a gap 34, which may have a width of the order of 50 nm to 100 nm, but is not limited to these values.Membrane 31 may also be referred to as a lamella. - At edges of
membrane 31, structures generally labeled 32 are formed to sense a pressure exerted onmembrane 31, which pressure results in a displacement and/or change of tension ofmembrane 31. For example, withinwafer 30 resistive structures may be formed which change their resistance depending on displacements ofmembrane 31. For formation of the above-mentioned structures, any techniques conventionally employed for manufacturing micro-electro-mechanical systems (MEMS) or semiconductor devices may be used. - On top of
wafer 30, BEOL layers 33 are formed. The BEOL layers may for example comprise alternating metal layers and dielectric layers and may be capped with athicker metal layer 35 which may be manufactured by electroless plating, for example, on top. The depicted layers serve only as examples, and other structures may be used as well. Abovemembrane 31, as can be seen best inFIG. 3A , the BEOL layers are removed such thatmembrane 31 is subject to ambient pressure, thus enabling the structure ofFIG. 3 to act as a pressure sensor. - It should be noted that during FEOL and BEOL as mentioned above, in addition to the pressure sensor shown additional structures and devices, for example additional sensors and/or electronic circuits, may be formed in
wafer 30 using conventional fabrication techniques. - In
FIG. 4 , an acceleration sensor according to an embodiment which is implemented on the basis of the pressure sensor ofFIG. 3 is shown. Elements 40-43 correspond to elements 30-33 of the pressure sensor ofFIG. 3 and will not be discussed above in detail. Also, any additions or variations discussed with reference toFIG. 3 , e.g. the formation of additional structures and devices, may also apply to the embodiment ofFIG. 4 in some cases. - In contrast to the pressure sensor of
FIG. 3 , a BEOL layer stack serving as an inertial mass 45 remains on top of membrane 41. Inertial mass 45 is separated from remaining BEOL layers 43 by gaps 46. When the acceleration sensor ofFIG. 4 is accelerated in a direction perpendicular to a surface of wafer 40 as indicated by an arrow 47, through the inertia of inertial mass 45 membrane 41 is displaced, which may be measured via structures 42. In this way, the acceleration may be measured. In the embodiment ofFIG. 4 , in gaps 46 portions of membrane 41 remain free from inertial mass 45. - Therefore, by providing inertial mass 45 on top of a membrane of a pressure sensor, the pressure sensor may be converted to an acceleration sensor.
- A membrane like membrane 41 may, for example, have an area in the range of 5 μm·5 μm to 30 μm·30 μm, for example, 10 μm·10 μm or 15 μm·15 μm, but is not limited to these values, which are given merely as examples. The BEOL layers may, for example, comprise silicon oxide layers, copper layers, tantalum layers, tungsten layers, nickel phosphide (NiP) layers, platinum layers and/or aluminum layers. A weight of the inertial mass may, for example, be of the order of 5-6·10−11 g/μm2. A diameter of mass 45 may, for example, be of the order of 9 μm, and as mentioned an area covered by inertial mass 45 may, for example, be slightly smaller than the area of membrane 41.
- In some embodiments, for example, a sensitivity sufficient to detect accelerations of the order of 2,3·10−4 kg·m/s2 may be obtained. This may be sufficient for some applications, for example, for a wake up application in tire pressure monitoring systems (TPMS). For example, in an embodiment where the pressure sensor of
FIG. 4 is mounted to a tire with inertial mass 45 facing inwards (i.e. towards an axle), it may be sensed when a speed exceeds a velocity of the order of 25 km/h in some embodiments. - The numerical values above are merely given to illustrate the capabilities of some embodiments and are not to be construed as limiting. For example, in other embodiments to increase a sensitivity the mass of inertial mass 45 may be increased, for example, by increasing a thickness of a metal layer provided on top of inertial mass 45 (similar to
metal layer 35 ofFIG. 3A ), or by increasing the area of the membrane. - A further possibility to increase sensitivity in some embodiments will now be discussed with reference to
FIG. 5 . -
FIG. 5 shows a simplified partial cross-sectional view of an acceleration sensor according to a further embodiment. In the embodiment ofFIG. 5 , as a pressure-sensitive element amembrane 51 is formed in awafer 50 and is separated fromwafer 50 in a certain area by a gap, as already explained formembranes 31 and 41 with reference toFIGS. 3 and 4 . On top ofmembrane 51, aninertial mass 52 is formed. In some embodiments,inertial mass 52 may be a BEOL inertial mass, i.e., formed during BEOL of a manufacturing process, and may comprise ametal layer 53 on top which may be formed via electroless plating, for example. In other embodiments, other kinds of inertial masses may be provided.Inertial mass 52 in the embodiment ofFIG. 5 is separated from a remainingBEOL layer 54 by agap 57. So far, the embodiment ofFIG. 5 may correspond to the embodiment ofFIG. 4 , and variations and modifications and implementation specifics discussed with reference toFIG. 4 in some embodiments may also apply to the embodiment ofFIG. 5 . - Within
gap 57, wheremembrane 51 is free ofinertial mass 52, in the embodiment ofFIG. 5 as indicated by 56membrane 51 has an undulating, winded and/or bent shape. In the embodiment ofFIG. 5 , this shape is caused by providingelements 55 onwafer 50 adjacent togap 57. Theseelements 55 may be manufactured during FEOL and may, for example, be made of polycrystalline silicon deposited during a gate formation process or other polycrystalline silicon deposition processes used during FEOL. In other embodiments,elements 55 may be deposited using other processes. Through the provision ofelements 55, during manufacturing also the gap betweenwafer 50 andmembrane 51 follows the shape ofelements 55 to provide the shown undulating, bent and/or winded shape. A thickness ofelements 55 may, for example, be of the order of 50 μm to 300 μm, for example, about 240 μm, and may in embodiments be in the order of a thickness of the gap betweenmembrane 51 andwafer 50. The number of elements shown inFIG. 5 is not to be construed as limiting, and other numbers may also be used. - With the embodiments of acceleration sensors discussed so far, acceleration or acceleration components perpendicular to a wafer surface may be detected. In some applications, it may additionally be desirable to detect acceleration or acceleration components parallel to a wafer surface. A schematic cross-sectional view of a corresponding embodiment is shown in
FIG. 6 . - In the embodiment of
FIG. 6 , twomembranes wafer 60. Each ofmembrane FIGS. 3 to 5 . In other words, eachmembrane membranes mass 61 is formed onwafer 60. In some embodiments,mass 61 may be formed during BEOL and/or may comprise oxide layers, metal layers, nitride layers and the like. - Similar to the embodiments discussed so far, with the acceleration sensor of
FIG. 6 an acceleration in a direction perpendicular to a plane ofwafer 60 may be detected. Additionally, in the embodiment ofFIG. 6 , an acceleration in a direction parallel to the surface ofwafer 60, for example, an acceleration as indicated byarrows 65, may be detected. With such an acceleration, as indicated byarrows inertial mass 61 onmembranes inertial mass 61 may press onmembrane 62 and remove pressure frommembrane 66. This enables a detection of the acceleration. In contrast, with an acceleration perpendicular to the surface ofwafer 60, the effects on bothmembranes - It should be noted that while in the cross-sectional view of
FIG. 6 inertial mass 61 is shown as spanning twomembrane FIG. 6 , in other embodiments other pressure sensing structures may be used. - The above-described embodiments serve only as illustrative examples and are not to be construed as limiting the scope of the present application.
Claims (19)
1. An acceleration sensor, comprising:
a pressure sensing structure formed in a wafer, and
an inertial mass provided on the pressure sensing structure, the inertial mass comprising a back-end-of-line structure.
2. The acceleration sensor of claim 1 , wherein the pressure sensing structure comprises a membrane.
3. The acceleration sensor of claim 2 , wherein the membrane, in a membrane portion free of the inertial mass, has at least one of a winded shape, an undulating shape or a bent shape.
4. The acceleration sensor of claim 2 , wherein the membrane has an area between 5 μm·5 μm and 30 μm·30 μm.
5. The acceleration sensor of claim 1 , wherein the inertial mass comprises at least one metal layer.
6. The acceleration sensor of claim 1 , wherein the inertial mass comprises at least one dielectric layer.
7. The acceleration sensor of claim 1 , wherein the inertial mass is capped with a metal layer.
8. The acceleration sensor of claim 1 , further comprising a further pressure sensing structure formed in the wafer adjacent to the pressure sensing structure, wherein the inertial mass spans the pressure sensing structure and the further pressure sensing structure.
9. The acceleration sensor of claim 8 , wherein the further pressure sensing structure comprises a membrane.
10. An acceleration sensor, comprising:
a membrane formed on a wafer, and
an inertial mass covering part of the membrane,
wherein a portion of the membrane outside an area covered by the inertial mass has at least one of a winded, undulated or bent shape.
11. The acceleration sensor of claim 10 , wherein the inertial mass comprises a back-end-of-line structure.
12. The acceleration sensor of claim 10 , further comprising elements formed on the wafer under the portion of the membrane to cause the at least one of a winded, undulated or bent shape.
13. The acceleration sensor of claim 12 , wherein the elements are front-end-of-line structures.
14. The acceleration sensor of claim 12 , wherein the elements are made of polycrystalline silicon.
15. An acceleration sensor, comprising:
a first pressure sensing structure formed in a wafer,
a second pressure sensing structure adjacent to the first pressure sensing structure, and
an inertial mass on and spanning the first pressure sensing structure and the second pressure sensing structure.
16. The acceleration sensor of claim 15 , wherein the inertial mass is a back-end-of-line inertial mass.
17. The pressure sensor of claim 15 , wherein the first pressure sensing structure comprises a first membrane, and wherein the second pressure sensing structure comprises a second membrane.
18. The pressure sensor of claim 15 , wherein the first pressure sensing structure is operable independent from the second pressure sensing structure.
19. The acceleration sensor of claim 15 , further comprising at least one further pressure sensing structure, the at least one further pressure sensing structure being located adjacent to at least one of the first or second pressure sensing structure, the inertial mass also on and spanning the at least one further pressure sensing structure.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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US14/195,214 US20150247879A1 (en) | 2014-03-03 | 2014-03-03 | Acceleration sensor |
CN201510093716.5A CN104897926B (en) | 2014-03-03 | 2015-03-03 | Acceleration transducer |
DE102015103061.6A DE102015103061A1 (en) | 2014-03-03 | 2015-03-03 | accelerometer |
CN201910654068.4A CN110361562B (en) | 2014-03-03 | 2015-03-03 | Acceleration sensor |
US15/899,979 US10648999B2 (en) | 2014-03-03 | 2018-02-20 | Method for manufacturing an acceleration sensor |
Applications Claiming Priority (1)
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US14/195,214 US20150247879A1 (en) | 2014-03-03 | 2014-03-03 | Acceleration sensor |
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US15/899,979 Continuation US10648999B2 (en) | 2014-03-03 | 2018-02-20 | Method for manufacturing an acceleration sensor |
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US15/899,979 Active 2034-05-11 US10648999B2 (en) | 2014-03-03 | 2018-02-20 | Method for manufacturing an acceleration sensor |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10648999B2 (en) | 2014-03-03 | 2020-05-12 | Infineon Technologies Ag | Method for manufacturing an acceleration sensor |
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US11528546B2 (en) | 2021-04-05 | 2022-12-13 | Knowles Electronics, Llc | Sealed vacuum MEMS die |
US11540048B2 (en) | 2021-04-16 | 2022-12-27 | Knowles Electronics, Llc | Reduced noise MEMS device with force feedback |
US11649161B2 (en) | 2021-07-26 | 2023-05-16 | Knowles Electronics, Llc | Diaphragm assembly with non-uniform pillar distribution |
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US11772961B2 (en) | 2021-08-26 | 2023-10-03 | Knowles Electronics, Llc | MEMS device with perimeter barometric relief pierce |
US11780726B2 (en) | 2021-11-03 | 2023-10-10 | Knowles Electronics, Llc | Dual-diaphragm assembly having center constraint |
US11787688B2 (en) | 2018-10-05 | 2023-10-17 | Knowles Electronics, Llc | Methods of forming MEMS diaphragms including corrugations |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788867A (en) * | 1986-12-30 | 1988-12-06 | Fairchild Weston Systems, Inc. | Differential pressure detector |
US4902861A (en) * | 1989-03-20 | 1990-02-20 | Siemens-Bendix Automotive Electronics Limited | Inertia switch |
US5177579A (en) * | 1989-04-07 | 1993-01-05 | Ic Sensors, Inc. | Semiconductor transducer or actuator utilizing corrugated supports |
US5310104A (en) * | 1991-12-16 | 1994-05-10 | General Electric Company | Method and apparatus for cleaving a semiconductor wafer into individual die and providing for low stress die removal |
US5413659A (en) * | 1993-09-30 | 1995-05-09 | Minnesota Mining And Manufacturing Company | Array of conductive pathways |
US5591910A (en) * | 1994-06-03 | 1997-01-07 | Texas Instruments Incorporated | Accelerometer |
US5656778A (en) * | 1995-04-24 | 1997-08-12 | Kearfott Guidance And Navigation Corporation | Micromachined acceleration and coriolis sensor |
US6464444B1 (en) * | 1996-03-29 | 2002-10-15 | Ngk Insulators, Ltd. | Apparatus for peeling off chips using a plurality of first and second protrusions |
US6845670B1 (en) * | 2003-07-08 | 2005-01-25 | Freescale Semiconductor, Inc. | Single proof mass, 3 axis MEMS transducer |
US7084759B2 (en) * | 2001-08-31 | 2006-08-01 | International Business Machines Corporation | Drop detection device |
US7194905B2 (en) * | 2004-09-14 | 2007-03-27 | Hosiden Corporation | Acceleration sensor |
US7243551B2 (en) * | 2004-03-03 | 2007-07-17 | Robert Bosch Gmbh | Micromechanical component having a sealed cavity and at least two dielectric layers and corresponding method for its manufacture |
US7305890B2 (en) * | 2001-07-17 | 2007-12-11 | Smc Kabushiki Kaisha | Micro-electromechanical sensor |
US7322236B2 (en) * | 2005-01-25 | 2008-01-29 | Stmicroelectronics S.R.L. | Process for manufacturing a triaxial piezoresistive accelerometer and relative pressure-monitoring device |
US7490522B2 (en) * | 2004-07-05 | 2009-02-17 | Infineon Technologies Ag | Magnetostrictive multilayer sensor and method for producing a sensor |
US7600428B2 (en) * | 2006-03-14 | 2009-10-13 | Commissariat A L'energie Atomique | Triaxial membrane accelerometer |
US7757555B2 (en) * | 2006-08-30 | 2010-07-20 | Robert Bosch Gmbh | Tri-axis accelerometer having a single proof mass and fully differential output signals |
US7950281B2 (en) * | 2007-02-28 | 2011-05-31 | Infineon Technologies Ag | Sensor and method for sensing linear acceleration and angular velocity |
US8049287B2 (en) * | 2005-10-14 | 2011-11-01 | Stmicroelectronics S.R.L. | Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device |
US20120073371A1 (en) * | 2010-09-28 | 2012-03-29 | Infineon Technologies Ag | Microelectromechanical sensor |
US8207004B2 (en) * | 2005-01-03 | 2012-06-26 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US8266962B2 (en) * | 2009-01-28 | 2012-09-18 | Infineon Technologies Ag | Acceleration sensor |
US8408075B2 (en) * | 2009-07-08 | 2013-04-02 | Wacoh Corporation | Force detection device |
US20130125652A1 (en) * | 2011-11-18 | 2013-05-23 | Samsung Electro-Mechanics Co., Ltd. | Inertial sensor |
US20130139594A1 (en) * | 2010-06-11 | 2013-06-06 | Lexvu Opto Microelectronics Technology (Shanghai) Ltd | Lexvu opto microelectronics technology shanghai (ltd) |
US8584522B2 (en) * | 2010-04-30 | 2013-11-19 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric x-axis gyroscope |
US8835319B2 (en) * | 2012-03-02 | 2014-09-16 | Infineon Technologies Ag | Protection layers for conductive pads and methods of formation thereof |
US8939029B2 (en) * | 2008-09-05 | 2015-01-27 | Analog Devices, Inc. | MEMS sensor with movable Z-axis sensing element |
US8991253B2 (en) * | 2010-09-28 | 2015-03-31 | Infineon Technologies Ag | Microelectromechanical system |
US9581512B2 (en) * | 2013-11-06 | 2017-02-28 | Invensense, Inc. | Pressure sensor with deformable membrane and method of manufacture |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005283393A (en) * | 2004-03-30 | 2005-10-13 | Fujitsu Media Device Kk | Inertia sensor |
DE102006062314A1 (en) | 2006-12-27 | 2008-07-03 | Robert Bosch Gmbh | Micromechanical acceleration sensor for detection of accelerations in multiple axles, has seismic mass fastened in central area in planar area of membrane, and electrodes forming condenser with opposite areas of seismic mass |
JP2008224294A (en) | 2007-03-09 | 2008-09-25 | Oki Electric Ind Co Ltd | Semiconductor acceleration sensor |
CN101334422A (en) * | 2007-06-27 | 2008-12-31 | 财团法人工业技术研究院 | Inertial sensor and method of manufacture |
KR101752011B1 (en) * | 2008-11-07 | 2017-06-28 | 카벤디시 키네틱스, 인크. | Method of using a plurality of smaller mems devices to replace a larger mems device |
CN103163326A (en) * | 2011-12-15 | 2013-06-19 | 西安威正电子科技有限公司 | Acceleration sensor of high-inherent frequency micro machine |
US9550669B2 (en) * | 2012-02-08 | 2017-01-24 | Infineon Technologies Ag | Vertical pressure sensitive structure |
US20150247879A1 (en) | 2014-03-03 | 2015-09-03 | Infineon Technologies Ag | Acceleration sensor |
-
2014
- 2014-03-03 US US14/195,214 patent/US20150247879A1/en not_active Abandoned
-
2015
- 2015-03-03 DE DE102015103061.6A patent/DE102015103061A1/en active Pending
- 2015-03-03 CN CN201510093716.5A patent/CN104897926B/en active Active
- 2015-03-03 CN CN201910654068.4A patent/CN110361562B/en active Active
-
2018
- 2018-02-20 US US15/899,979 patent/US10648999B2/en active Active
Patent Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788867A (en) * | 1986-12-30 | 1988-12-06 | Fairchild Weston Systems, Inc. | Differential pressure detector |
US4902861A (en) * | 1989-03-20 | 1990-02-20 | Siemens-Bendix Automotive Electronics Limited | Inertia switch |
US5177579A (en) * | 1989-04-07 | 1993-01-05 | Ic Sensors, Inc. | Semiconductor transducer or actuator utilizing corrugated supports |
US5310104A (en) * | 1991-12-16 | 1994-05-10 | General Electric Company | Method and apparatus for cleaving a semiconductor wafer into individual die and providing for low stress die removal |
US5413659A (en) * | 1993-09-30 | 1995-05-09 | Minnesota Mining And Manufacturing Company | Array of conductive pathways |
US5529829A (en) * | 1993-09-30 | 1996-06-25 | Minnesota Mining And Manufacturing Company | Array of conductive pathways |
US5591910A (en) * | 1994-06-03 | 1997-01-07 | Texas Instruments Incorporated | Accelerometer |
US5656778A (en) * | 1995-04-24 | 1997-08-12 | Kearfott Guidance And Navigation Corporation | Micromachined acceleration and coriolis sensor |
US6464444B1 (en) * | 1996-03-29 | 2002-10-15 | Ngk Insulators, Ltd. | Apparatus for peeling off chips using a plurality of first and second protrusions |
US7305890B2 (en) * | 2001-07-17 | 2007-12-11 | Smc Kabushiki Kaisha | Micro-electromechanical sensor |
US7084759B2 (en) * | 2001-08-31 | 2006-08-01 | International Business Machines Corporation | Drop detection device |
US6845670B1 (en) * | 2003-07-08 | 2005-01-25 | Freescale Semiconductor, Inc. | Single proof mass, 3 axis MEMS transducer |
US7243551B2 (en) * | 2004-03-03 | 2007-07-17 | Robert Bosch Gmbh | Micromechanical component having a sealed cavity and at least two dielectric layers and corresponding method for its manufacture |
US7490522B2 (en) * | 2004-07-05 | 2009-02-17 | Infineon Technologies Ag | Magnetostrictive multilayer sensor and method for producing a sensor |
US7194905B2 (en) * | 2004-09-14 | 2007-03-27 | Hosiden Corporation | Acceleration sensor |
US8530259B2 (en) * | 2005-01-03 | 2013-09-10 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US8207004B2 (en) * | 2005-01-03 | 2012-06-26 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US7322236B2 (en) * | 2005-01-25 | 2008-01-29 | Stmicroelectronics S.R.L. | Process for manufacturing a triaxial piezoresistive accelerometer and relative pressure-monitoring device |
US8049287B2 (en) * | 2005-10-14 | 2011-11-01 | Stmicroelectronics S.R.L. | Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device |
US7600428B2 (en) * | 2006-03-14 | 2009-10-13 | Commissariat A L'energie Atomique | Triaxial membrane accelerometer |
US7757555B2 (en) * | 2006-08-30 | 2010-07-20 | Robert Bosch Gmbh | Tri-axis accelerometer having a single proof mass and fully differential output signals |
US8418559B2 (en) * | 2006-08-30 | 2013-04-16 | Robert Bosch Gmbh | Tri-axis accelerometer having a single proof mass and fully differential output signals |
US7950281B2 (en) * | 2007-02-28 | 2011-05-31 | Infineon Technologies Ag | Sensor and method for sensing linear acceleration and angular velocity |
US8939029B2 (en) * | 2008-09-05 | 2015-01-27 | Analog Devices, Inc. | MEMS sensor with movable Z-axis sensing element |
US8266962B2 (en) * | 2009-01-28 | 2012-09-18 | Infineon Technologies Ag | Acceleration sensor |
US8408075B2 (en) * | 2009-07-08 | 2013-04-02 | Wacoh Corporation | Force detection device |
US8584522B2 (en) * | 2010-04-30 | 2013-11-19 | Qualcomm Mems Technologies, Inc. | Micromachined piezoelectric x-axis gyroscope |
US20130139594A1 (en) * | 2010-06-11 | 2013-06-06 | Lexvu Opto Microelectronics Technology (Shanghai) Ltd | Lexvu opto microelectronics technology shanghai (ltd) |
US20120073371A1 (en) * | 2010-09-28 | 2012-03-29 | Infineon Technologies Ag | Microelectromechanical sensor |
US8991253B2 (en) * | 2010-09-28 | 2015-03-31 | Infineon Technologies Ag | Microelectromechanical system |
US9075078B2 (en) * | 2010-09-28 | 2015-07-07 | Infineon Technologies Ag | Microelectromechanical accelerometer with wireless transmission capabilities |
US20130125652A1 (en) * | 2011-11-18 | 2013-05-23 | Samsung Electro-Mechanics Co., Ltd. | Inertial sensor |
US8835319B2 (en) * | 2012-03-02 | 2014-09-16 | Infineon Technologies Ag | Protection layers for conductive pads and methods of formation thereof |
US9581512B2 (en) * | 2013-11-06 | 2017-02-28 | Invensense, Inc. | Pressure sensor with deformable membrane and method of manufacture |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10648999B2 (en) | 2014-03-03 | 2020-05-12 | Infineon Technologies Ag | Method for manufacturing an acceleration sensor |
US10939214B2 (en) | 2018-10-05 | 2021-03-02 | Knowles Electronics, Llc | Acoustic transducers with a low pressure zone and diaphragms having enhanced compliance |
US11617042B2 (en) | 2018-10-05 | 2023-03-28 | Knowles Electronics, Llc. | Acoustic transducers with a low pressure zone and diaphragms having enhanced compliance |
US11671766B2 (en) | 2018-10-05 | 2023-06-06 | Knowles Electronics, Llc. | Microphone device with ingress protection |
US11787688B2 (en) | 2018-10-05 | 2023-10-17 | Knowles Electronics, Llc | Methods of forming MEMS diaphragms including corrugations |
US11528546B2 (en) | 2021-04-05 | 2022-12-13 | Knowles Electronics, Llc | Sealed vacuum MEMS die |
US11540048B2 (en) | 2021-04-16 | 2022-12-27 | Knowles Electronics, Llc | Reduced noise MEMS device with force feedback |
US11649161B2 (en) | 2021-07-26 | 2023-05-16 | Knowles Electronics, Llc | Diaphragm assembly with non-uniform pillar distribution |
US11772961B2 (en) | 2021-08-26 | 2023-10-03 | Knowles Electronics, Llc | MEMS device with perimeter barometric relief pierce |
US11780726B2 (en) | 2021-11-03 | 2023-10-10 | Knowles Electronics, Llc | Dual-diaphragm assembly having center constraint |
Also Published As
Publication number | Publication date |
---|---|
CN104897926B (en) | 2019-09-06 |
CN110361562A (en) | 2019-10-22 |
DE102015103061A1 (en) | 2015-09-03 |
US10648999B2 (en) | 2020-05-12 |
CN104897926A (en) | 2015-09-09 |
CN110361562B (en) | 2022-06-17 |
US20180172724A1 (en) | 2018-06-21 |
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