US20150024525A1 - Led lighting apparatus and method for fabricating wavelength conversion member for use in the same - Google Patents
Led lighting apparatus and method for fabricating wavelength conversion member for use in the same Download PDFInfo
- Publication number
- US20150024525A1 US20150024525A1 US14/508,598 US201414508598A US2015024525A1 US 20150024525 A1 US20150024525 A1 US 20150024525A1 US 201414508598 A US201414508598 A US 201414508598A US 2015024525 A1 US2015024525 A1 US 2015024525A1
- Authority
- US
- United States
- Prior art keywords
- wavelength conversion
- light
- led
- transmitting member
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000001721 transfer moulding Methods 0.000 claims abstract description 21
- 239000012778 molding material Substances 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 4
- FPWNLURCHDRMHC-UHFFFAOYSA-N 4-chlorobiphenyl Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1 FPWNLURCHDRMHC-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
A method of forming a light-emitting diode (LED) lighting apparatus, including forming an LED on a printed circuit board, and forming a wavelength conversion member on the LED, the wavelength conversion member being spaced apart from the LED. Forming the wavelength conversion member includes transfer molding a wavelength conversion layer on a light-transmitting member, and disposing the wavelength conversion member on the LED, the wavelength conversion layer being disposed between the LED and the light-transmitting member.
Description
- This application is a continuation of U.S. patent application Ser. No. 13/868,571, filed on Apr. 23, 2013, and claims priority from and the benefit of Korean Patent Application No. 10-2012-0047882, filed on May 7, 2012, each of which is hereby incorporated by reference for all purposes as if fully set forth herein.
- 1. Field of the Invention
- The present invention relates to a light-emitting diode (LED) lighting apparatus and a method for fabricating a wavelength conversion member which is spaced apart from an LED in the LED lighting apparatus and converts a wavelength of light emitted from the LED.
- 2. Description of the Related Art
- As light sources for illumination, fluorescent lamps and incandescent bulbs have been widely used. Incandescent bulbs have low efficiency and economic feasibility due to their high power consumption. For this reason, the demand for incandescent bulbs tends to significantly decrease. It is expected that such a decreasing trend will continue in the future. On the contrary, since fluorescent lamps have about ⅓ of power consumption of incandescent bulbs, they are high-efficient and cost-efficient. However, since fluorescent lamps are blackened by application of high voltage, the lifespan of fluorescent lamps is short. In addition, fluorescent lamps are environmentally unfriendly because they use a vacuum glass tube into which mercury being a heavy metal is injected together with argon gas.
- Recently, the demand for LED lighting apparatuses has been rapidly increasing. LED lighting apparatuses have a long lifespan and are driven with low power. In addition, LED lighting apparatuses are environmentally friendly because they use no environmentally harmful substances such as mercury. A typical LED lighting apparatus includes an LED module, and the LED module includes package-level or chip-level LEDs, and a printed circuit board (PCB) on which the LEDs are mounted. Each of the LEDs includes an LED chip configured to emit light in a specific wavelength range, and a wavelength conversion material (for example, a phosphor) configured to generate desired color light, especially white light, by converting a wavelength of light emitted from the LED chip. Generally, the wavelength conversion material is included in an encapsulation material covering the LED chip, or is directly formed on the LED by conformal coating.
- In the LED lighting apparatus, much heat is generated when the LEDS are supplied with power and operated. This heat has a bad influence on the wavelength conversion material included in the encapsulation material covering the LED chip or directly formed on the LED chip. That is, the encapsulation material including the wavelength conversion material may be separated from the surface of the LED chip by heat, and the original characteristic of the wavelength conversion material may be changed by heat. Therefore, feature values, such as color coordinates or color temperature of light generated by the LED lighting apparatus, may deviate from an originally intended or designed range.
- In this regard, there has been proposed an LED lighting apparatus configured such that an optical member or an optical cover spaced apart from LEDs includes phosphors. Since the optical member is spaced apart from the LEDs, the phosphors included in the optical member may not be badly affected by heat generated from the LEDs. As a method of adding the phosphors to the inside of the optical member, there are a method of molding an optical member with a resin material mixed with phosphors, and a method of coating a phosphor on one surface of an optical member in a printing technique. Since the former method is limited to the molding technique using the resin material, it is difficult to apply to an optical member such as a glass. In addition, air bubbles may be formed within the optical member together with the phosphors. According to the latter method, the phosphor layer is formed on one surface of the optical member. The phosphor layer is formed with an uniform surface in the early stage, but the surface of the phosphor layer may be rough as times goes by. In worse cases, the phosphor layer may be separated from the surface of the optical member.
- An aspect of the present invention is directed to provide a method for fabricating a wavelength conversion member reliably at low cost, in which the wavelength conversion member is used for an LED lighting apparatus and includes a uniform and dense wavelength conversion layer on at least one surface thereof.
- Another aspect of the present invention is directed to provide an LED lighting apparatus that can improve reliability by covering LEDs with a wavelength conversion member including a uniform and dense wavelength conversion layer on at least one surface thereof, and can always emit light in an intended color coordinate or color temperature range, in spite of passage of time.
- According to an aspect of the present invention, an LED lighting apparatus includes at least one LED, and a wavelength conversion member spaced apart from the LED and configured to convert a wavelength of light emitted from the LED. The wavelength conversion member includes a light-transmitting member, and a wavelength conversion layer formed on at least one surface of the light-transmitting member. The wavelength conversion layer includes a resin and a phosphor, and is formed by a transfer molding.
- According to one embodiment, the light-transmitting member may include a glass or a plastic material.
- According to one embodiment, the light-transmitting member may include an uneven pattern. The uneven pattern may be formed in a region which is covered with the wavelength conversion layer or a region which is not covered with the wavelength conversion layer.
- According to another aspect of the present invention, there is provided a method for fabricating a wavelength conversion member to be applied to an LED lighting apparatus. The method for fabricating the wavelength conversion member includes: preparing a light-transmitting member; arranging a mold to cover one surface of the light-transmitting member and; performing a transfer molding process to soften a solid molding material, including a phosphor and a resin, by heating and pressurizing the solid molding material, and fill a gap between the mold and the light-transmitting member with the softened molding material.
- According to one embodiment, the mold may include a transfer port, and a runner extending from the transfer port to the gap. The transfer molding process may include putting the solid molding material into the transfer port, pressurizing the solid molding material with a plunger, and injecting the softened molding material into the gap through the runner.
- According to one embodiment, the transfer port and the runner may be disposed in a region right above the light-transmitting member.
-
FIG. 1 is a cross-sectional view of an LED lighting apparatus according to an embodiment of the present invention. -
FIG. 2 is a plan view illustrating a state in which a mold for molding a wavelength conversion layer is disposed to cover one surface of a light-transmitting member. -
FIG. 3 is a cross-sectional view taken along line I-I ofFIG. 2 . -
FIGS. 4 and 5 are diagrams for describing a transfer molding process of forming the wavelength conversion layer on one surface of the light-transmitting member by using the mold illustrated inFIGS. 2 and 3 . -
FIG. 6 is a cross-sectional view of a wavelength conversion member in which the wavelength conversion layer is formed on one surface of the light-transmitting member in the transfer molding process illustrated inFIGS. 4 and 5 . -
FIGS. 7A to 7D are cross-sectional views illustrating various modifications of the wavelength conversion member. - Exemplary embodiments of the present invention will be described below in detail with reference to the accompanying drawings. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. In the drawings, the widths, lengths and thicknesses of elements may be exaggerated for clarity. Throughout the drawings and description, like reference numerals will be used to refer to like elements.
-
FIG. 1 is a cross-sectional view of an LED lighting apparatus according to an embodiment of the present invention. - Referring to
FIG. 1 , theLED lighting apparatus 1 includes a plurality ofLEDs 2, and awavelength conversion member 10 spaced apart from theLEDs 2 and covering top sides of theLEDs 2. The plurality ofLEDs 2 are mounted on a printed circuit board (PCB). In addition, thePCB 3 is attached on aheat sink 5 and thermoconductively connected to theheat sink 5. Theheat sink 5 may include a plurality ofheat dissipation fins 51. In addition, theLED lighting apparatus 1 may include a housing 6 for accommodating the above-describedLEDs 2 inside. - Although not illustrated, the
LED lighting apparatus 1 may include circuits and parts for driving theLEDs 2. TheLED 2 may include an LED chip and an encapsulation material encapsulating the LED chip. The LED chip may be directly mounted on thePCB 3, or may be disposed on thePCB 3 while being embedded in a package with lead terminals. - The
LEDs 2 may include a GaN-based LED chip configured to emit blue light, and an LED chip with a wavelength of about 430 μm to 470 μm, which includes an InGaN-based active layer. In addition, thewavelength conversion member 10 includes a light-transmittingmember 11 configured to transmit light, and awavelength conversion layer 12 formed on the surface of the light-transmittingmember 11. Thewavelength conversion member 10 includes a phosphor that converts blue light generated by theLED 2 into long-wavelength light, and the phosphor may be a yellow phosphor or a combination of a green phosphor and a red phosphor. - After light passes through the
wavelength conversion member 10, the wavelength-converted long-wavelength light and the non-wavelength-converted blue light may be mixed to generate white light. Since the phosphor within thewavelength conversion layer 12 provided in thewavelength conversion member 10 is spaced apart from theLED 2, the characteristic or performance of thewavelength conversion member 10 is not deteriorated by heat and/or light generated by theLED 2. - The light-transmitting
member 11 may be made of a plate type transparent glass or a plastic. However, the light-transmittingmember 11 may be made of light-transmitting materials other than glass. In addition, thewavelength conversion member 10 illustrated inFIG. 1 includes thewavelength conversion layer 12 only on the bottom surface of the light-transmittingmember 11, but thewavelength conversion layer 12 may be formed only on the top surface of the light-transmittingmember 11 or may be formed on both the top surface and the bottom surface. Thewavelength conversion layer 12 is formed on the surface of the light-transmittingmember 11 to a predetermined thickness by the transfer molding, and has a uniform phosphor distribution. - A method for fabricating the wavelength conversion member by forming the
wavelength conversion layer 12 on one surface of the light-transmittingmember 11 by the transfer molding will be described in more detail. -
FIG. 2 is a plan view illustrating a state in which amold 80 is disposed to cover one surface of the light-transmittingmember 11 in order for the transfer molding of the wavelength conversion layer 12 (seeFIG. 1 ).FIG. 3 is a cross-sectional view taken along line I-I ofFIG. 2 . - Referring to
FIGS. 2 and 3 , theplate type mold 80 is disposed to cover one surface of the light-transmittingmember 11 having an area equal to or smaller than that of themold 80. InFIG. 2 , the light-transmittingmember 11 is covered with theplate type mold 80 and is indicated by a hidden line. Theplate type mold 80 includes one or moreresin injection portions 81. Themold 80 having an appropriate number of theresin injection portions 81 may be selected and used according to the area of one surface of the light-transmittingmember 11 or the area of the wavelength conversion layer 12 (seeFIG. 1 ) formed on one surface of the light-transmittingmember 11 by the transfer molding. In this case, a circumference of a gap between the light-transmittingmember 11 and theplate type mold 80 is filled. - The
resin injection portion 81 includes atransfer port 812 and arunner 814 having a cross-sectional area smaller than that of thetransfer port 812. Therunner 814 extends from thetransfer port 812 to a space covering one surface of the light-transmittingmember 11, and may include a runner of a narrow sense, a gate and/or a sprue. In this embodiment, both thetransfer port 812 and therunner 814 of theresin injection portion 81 are disposed in a region right above the light-transmittingmember 11. - In this embodiment, a gap between one surface of the light-transmitting
member 11 and themold 80 facing each other becomes a space in which thewavelength conversion layer 12 is to be formed by the transfer molding. Therunner 814 extends from thetransfer port 812 to the space. - As illustrated in
FIGS. 2 and 3 , before the mold is arranged, asolid molding material 70 mixed with a phosphor is prepared in a tablet form. Thesolid molding material 70 may be prepared in a tablet form by pressing a powder in which a phosphor and a powder-type resin are uniformly mixed. As the resin used herein as thesolid molding material 70, epoxy, especially epoxy molding compound (EMC) having excellent absorption resistance, may be advantageously used. -
FIGS. 4 and 5 are diagrams for describing the transfer molding process of forming the wavelength conversion layer on one surface of the light-transmitting member by using the above-described mold. - Referring to
FIGS. 4 and 5 , under a high-temperature and high-pressure condition, the transfer molding process is performed to inject the phosphor-containing resin into the gap (or space) between the light-transmittingmember 11 and themold 80 through theresin injection portion 81. More specifically, the tablet-shapedsolid molding material 70 is put into thetransfer port 812 of theresin injection portion 81. While raising a temperature, aplunger 60 disposed in thetransfer port 812 moves vertically downward to pressurize thesolid molding material 70. Themolding material 70, which is heated at a high temperature and pressurized at a high pressure, is softened into a gel phase or a liquid phase. Themolding material 70 is densely filled into the gap between the light-transmittingmember 11 and themold 80 through therunner 814 and is then cured. - In this manner, the
wavelength conversion layer 12 with the phosphors uniformly distributed is formed on the surface of the light-transmittingmember 11 to a uniform thickness. In a case where theresin injection portion 81 is provided in plurality (seeFIG. 2 ), theplungers 60 are provided as many as the number of theresin injection portions 81, and theplungers 60 are vertically moved in synchronization. A heating unit such as a heater for heating themolding material 70 may be installed in theplunger 60 or themold 80. -
FIG. 6 is a cross-sectional view of the wavelength conversion member with the wavelength conversion layer formed on one surface of the light-transmitting member by the transfer molding step. - Referring to
FIG. 6 , the light-transmittingmember 11 with thewavelength conversion layer 12 is separated from themold 80. The cured resin r, which exists in the runner 814 (seeFIGS. 2 to 5 ), may remain in thewavelength conversion layer 12. In this case, this resin r is removed. As a result, it is possible to fabricate thewavelength conversion member 10 in which thewavelength conversion layer 12 is uniformly formed on one surface of the light-transmittingmember 11 by the transfer molding. - The structure or shape of the
mold 80 can be variously modified. For example, thetransfer port 812 of theresin injection portion 81 may be disposed at a position deviating from the light-transmittingmember 11, and therunner 814 may extend to the lateral space of the light-transmittingmember 11 instead of the upper space of the light-transmittingmember 11. - Various modifications of the
wavelength conversion members 10 according to the present invention are provided. - A
wavelength conversion member 10 illustrated inFIG. 7A includes a pair of wavelength conversion layers 12 formed by a transfer molding on two opposite surfaces of a light-transmittingmember 11, that is, top and bottom surfaces thereof The pair of wavelength conversion layers 12 may include the same phosphor or may include different phosphors. In awavelength conversion member 10 illustrated inFIG. 7B , awavelength conversion layer 12 is formed on one surface of a light-transmittingmember 11, and anuneven pattern 13 for light diffusion or scattering is formed on an opposite surface of the light-transmittingmember 11. Theuneven pattern 13 diffuses or scatters light so that wavelength-converted light and non-wavelength-converted light can be mixed more efficiently. Therefore, more uniform white light can be obtained. In awavelength conversion member 10 illustrated inFIG. 7C , anuneven pattern 13 is formed on one surface of a light-transmittingmember 11, and awavelength conversion layer 12 is formed by a transfer molding to cover theuneven pattern 13. Awavelength conversion member 10 illustrated inFIG. 7D includes a curved portion, and awavelength conversion layer 12 is formed on the surface of the curved portion. - While the embodiments of the present invention have been described with reference to the specific embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
Claims (11)
1. A method of forming a light-emitting diode (LED) lighting apparatus, the method comprising:
forming an LED on a printed circuit board (PCB); and
forming a wavelength conversion member on the LED, the wavelength conversion member being spaced apart from the LED,
wherein forming the wavelength conversion member comprises:
transfer molding a wavelength conversion layer on a light-transmitting member; and
disposing the wavelength conversion member on the LED, the wavelength conversion layer being disposed between the LED and the light-transmitting member.
2. The method of claim 1 , wherein transfer molding the wavelength conversion layer comprises:
disposing a mold to cover a first surface of the light-transmitting member, a gap being disposed between the light-transmitting member and the mold; and
performing a transfer molding process, comprising:
softening a solid molding material, comprising a phosphor and a resin, by heating and pressurizing the solid molding material; and
filling the gap between the mold and the light-transmitting member with the softened molding material.
3. The method of claim 2 , wherein:
the mold comprises at least one resin injection portion comprising a transfer port and a runner connecting the transfer port and the gap; and
transfer molding the wavelength conversion layer further comprises:
disposing the solid molding material in the transfer port;
pressurizing the solid molding material with a plunger;
injecting the softened molding material into the gap, through the runner; and
curing the molding material to form the wavelength conversion layer.
4. The method of claim 3 , wherein the mold comprises an area equal to or greater than the area of the light-transmitting member.
5. The method of claim 4 , further comprising separating the wavelength conversion member from the mold, before disposing the wavelength conversion member on the LED.
6. The method of claim 1 , further comprising forming a heat sink on an opposite surface of the PCB than the surface on which the LED is formed.
7. The method of claim 6 , wherein the heat sink comprises heat dissipation fins.
8. The method of claim 1 , further comprising forming a housing surrounding the LED.
9. The method of claim 1 , wherein the light-transmitting member is formed to have an uneven pattern in a portion on which the wavelength conversion layer is disposed.
10. The method of claim 1 , wherein the light-transmitting member is formed to have an uneven pattern in a portion on which the wavelength conversion layer is not disposed.
11. The method of claim 1 , wherein the light-transmitting member comprises a glass or a plastic material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/508,598 US20150024525A1 (en) | 2012-05-07 | 2014-10-07 | Led lighting apparatus and method for fabricating wavelength conversion member for use in the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120047882A KR20130124632A (en) | 2012-05-07 | 2012-05-07 | Led illuminating apparatus and method for fabricating wavelength conversion member used for the apparatus |
KR10-2012-0047882 | 2012-05-07 | ||
US13/868,571 US8871538B2 (en) | 2012-05-07 | 2013-04-23 | Method for fabricating wavelength conversion member for use in LED lighting apparatus |
US14/508,598 US20150024525A1 (en) | 2012-05-07 | 2014-10-07 | Led lighting apparatus and method for fabricating wavelength conversion member for use in the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/868,571 Continuation US8871538B2 (en) | 2012-05-07 | 2013-04-23 | Method for fabricating wavelength conversion member for use in LED lighting apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150024525A1 true US20150024525A1 (en) | 2015-01-22 |
Family
ID=49620905
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/868,571 Expired - Fee Related US8871538B2 (en) | 2012-05-07 | 2013-04-23 | Method for fabricating wavelength conversion member for use in LED lighting apparatus |
US14/498,886 Abandoned US20150014733A1 (en) | 2012-05-07 | 2014-09-26 | Led lighting apparatus and method for fabricating wavelength conversion member for use in the same |
US14/508,598 Abandoned US20150024525A1 (en) | 2012-05-07 | 2014-10-07 | Led lighting apparatus and method for fabricating wavelength conversion member for use in the same |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/868,571 Expired - Fee Related US8871538B2 (en) | 2012-05-07 | 2013-04-23 | Method for fabricating wavelength conversion member for use in LED lighting apparatus |
US14/498,886 Abandoned US20150014733A1 (en) | 2012-05-07 | 2014-09-26 | Led lighting apparatus and method for fabricating wavelength conversion member for use in the same |
Country Status (2)
Country | Link |
---|---|
US (3) | US8871538B2 (en) |
KR (1) | KR20130124632A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5310700B2 (en) * | 2010-10-27 | 2013-10-09 | パナソニック株式会社 | LED package manufacturing system and resin coating method in LED package manufacturing system |
WO2016203028A1 (en) * | 2015-06-19 | 2016-12-22 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Rubber-like material for the immobilization of proteins and its use in lighting, diagnosis and biocatalysis |
EP3328179B1 (en) * | 2015-07-21 | 2020-10-07 | FUJI Corporation | Component mounting device and nozzle replacement method therefor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050051782A1 (en) * | 2003-09-09 | 2005-03-10 | Negley Gerald H. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
US20080013316A1 (en) * | 2006-07-17 | 2008-01-17 | Kun-Yuan Chiang | High power LED lamp with heat dissipation enhancement |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080121918A1 (en) * | 2006-11-15 | 2008-05-29 | The Regents Of The University Of California | High light extraction efficiency sphere led |
US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
JP2007273562A (en) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | Semiconductor light-emitting device |
US7934862B2 (en) * | 2007-09-24 | 2011-05-03 | Munisamy Anandan | UV based color pixel backlight for liquid crystal display |
US8247248B2 (en) * | 2009-05-15 | 2012-08-21 | Achrolux Inc. | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure |
US8778113B2 (en) * | 2010-01-25 | 2014-07-15 | Konica Minolta Advanced Layers, Inc. | Method for continuously forming lamination optical function element sheet and lamination optical function element sheet forming apparatus |
-
2012
- 2012-05-07 KR KR1020120047882A patent/KR20130124632A/en not_active Application Discontinuation
-
2013
- 2013-04-23 US US13/868,571 patent/US8871538B2/en not_active Expired - Fee Related
-
2014
- 2014-09-26 US US14/498,886 patent/US20150014733A1/en not_active Abandoned
- 2014-10-07 US US14/508,598 patent/US20150024525A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050051782A1 (en) * | 2003-09-09 | 2005-03-10 | Negley Gerald H. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
US20080013316A1 (en) * | 2006-07-17 | 2008-01-17 | Kun-Yuan Chiang | High power LED lamp with heat dissipation enhancement |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
Also Published As
Publication number | Publication date |
---|---|
US20130313593A1 (en) | 2013-11-28 |
US20150014733A1 (en) | 2015-01-15 |
KR20130124632A (en) | 2013-11-15 |
US8871538B2 (en) | 2014-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102071463B1 (en) | Led with high thermal conductivity particles in phosphor conversion layer and the method of fabricating the same | |
CN101636851B (en) | LED structure and process for producing LED structure | |
US20060105484A1 (en) | Molded lens over LED die | |
CN103081567B (en) | The phosphor suspending in silicone, be molded/formed and use in remote phosphors structure | |
KR101575366B1 (en) | Light emitting device package | |
CN102738370B (en) | Led packaging method | |
US9159886B2 (en) | Lighting apparatus with a carrier layer | |
KR100888487B1 (en) | LED Package With Diffusion Layer And THe Fabrication Method Thereof | |
CN106058013A (en) | Chip level LED packaging technology | |
CN105633248B (en) | LED lamp and preparation method thereof | |
WO2009140829A1 (en) | A led lighting device with low attenuation and high luminous efficiency and manufacturing method thereof | |
US8871538B2 (en) | Method for fabricating wavelength conversion member for use in LED lighting apparatus | |
JP2010206208A (en) | Light emitting diode package structure and manufacturing method therefor | |
KR20180074968A (en) | Led lighting not having fluorescence molding layer | |
US9777890B2 (en) | Lighting module and method of manufacturing a lighting module | |
KR20120109201A (en) | Method for preparation of light emitting diode package and molding frame for preparation of light emitting diode package | |
TW201511339A (en) | Method for manufacturing LED | |
KR20130077058A (en) | Led package and method for manufacturing the same | |
JP5202016B2 (en) | Resin sealing method and resin sealing device | |
KR101865272B1 (en) | Light emitting diode module and method for manufacturing the same | |
KR20180081635A (en) | Led module | |
KR101701746B1 (en) | Led lighting device | |
CN105845804A (en) | Light emitting diode device and light emitting device using same | |
CN103855273A (en) | LED lamp substrate and manufacturing process thereof | |
TW201528554A (en) | Method for manufacturing light emitting diode package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |