US20100233437A1 - Lithographic machine platform and applications thereof - Google Patents

Lithographic machine platform and applications thereof Download PDF

Info

Publication number
US20100233437A1
US20100233437A1 US12/620,418 US62041809A US2010233437A1 US 20100233437 A1 US20100233437 A1 US 20100233437A1 US 62041809 A US62041809 A US 62041809A US 2010233437 A1 US2010233437 A1 US 2010233437A1
Authority
US
United States
Prior art keywords
substrate
layer
patterned layer
precursory
machine platform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/620,418
Inventor
Chien-Chao Huang
Chun-Chi Chen
Shyi-Long Shy
Cheng-San WU
Fu-Liang Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Applied Research Laboratories
Original Assignee
National Applied Research Laboratories
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Applied Research Laboratories filed Critical National Applied Research Laboratories
Assigned to NATIONAL APPLIED RESEARCH LABORATORIES reassignment NATIONAL APPLIED RESEARCH LABORATORIES ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, CHUN-CHI, HUANG, CHIEN-CHAO, SHY, SHYI-LONG, WU, CHENG-SAN, YANG, FU-LIANG
Publication of US20100233437A1 publication Critical patent/US20100233437A1/en
Priority to US13/684,019 priority Critical patent/US8679728B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Definitions

  • the present invention relates to a lithographic technology, particularly to an electron beam or ion beam lithographic machine platform and applications thereof, which is applied to the lithographic technology.
  • patterns are generated by using an optical method, an electron beam, a nano impression method on a specific polymer coating layer (namely, the polymer material that is sensitive to lights or electron beams), also called resist, through chemical reactions or variations of thermal current stress and then used as a required mask when the subsequent pattern is transferred.
  • a specific polymer coating layer namely, the polymer material that is sensitive to lights or electron beams
  • the resist usually requires complicated thermal treatment, exposure and development or the hull release fabrication process.
  • a thickness of the resist is not enough for consumption of the subsequent etching fabrication processes, and the resist further requires the bottom anti-reflection coating layer (BARC) in the optical lithography technology and the anti-etching film used as a mask, such as a silicon oxynitride hard mask.
  • BARC bottom anti-reflection coating layer
  • the etching mask layer 10 comprises two hard masks (ACL/SiON) 12-14, a bottom anti-reflection coating layer 16 , and a polymer coating layer 18 .
  • the polymer coating layer 18 is sequentially implemented with a post-exposure bake, a development and a hard baking fabrication process, and then the anti-reflection layer 16 and the hard mask layer 12 are etched, then the polymer coating layer 18 and the anti-reflection layer 16 are removed.
  • the present invention provides a lithographic machine platform and applications thereof, so as to solve the afore-mentioned problems of the prior art.
  • the primary objective of the present invention is to provide a lithographic machine platform and application thereof, whereby using an electron beam or an ion beam to induce a precursory gas or a precursory layer to react with the electron beam or the ion beam, and the precursory gas or the precursory layer is deposited to form a patterned layer with high resolution on a substrate lest a photo resistance used as a medium for a pattern transformation be required in the conventional lithographic fabrication process.
  • Another objective of the present invention is to provide a lithographic machine platform and application thereof, wherein a precursory gas is not reacted with the undefined (un-irradiated) regions of an electron beam or an ion beam to generate deposition (residual).
  • a precursory gas is not reacted with the undefined (un-irradiated) regions of an electron beam or an ion beam to generate deposition (residual).
  • the existing advanced immersion lithography is moistened and stuck by an immersion liquid to create residual and contaminations.
  • Further objective of the present invention is to provide a lithographic machine platform and application thereof, wherein not only number of the steps of the lithographic fabrication process and the fabrication cost can be reduced but abnormal fabrication processes and production defects caused by the minute and complicated fabrication process steps can be reduced, and then the production yield is increased.
  • the present invention provides a lithographic machine platform comprising: an electron beam or an ion beam generator generating an electron beam or an ion beam; a substrate supporting platform supporting a semiconductor substrate; and a precursory gas injector injecting a precursory gas on a surface of the substrate.
  • the precursory gas is reacted with the electron beam or the ion beam to form a patterned layer deposited on the surface of the substrate.
  • the present invention also provides a patterned layer fabricated with the above-mentioned lithographic machine platform, wherein the patterned layer is formed on a substrate and a precursory gas reacted with an electron beam or an ion beam is deposited to form the patterned layer.
  • the present invention also provides a method for fabricating a patterned layer comprising steps of: providing a semiconductor substrate; forming a precursory gas on the semiconductor substrate; and depositing to form a patterned layer on the semiconductor substrate by reacting the precursory gas with an electron beam or an ion beam.
  • the present invention further provides another lithographic machine platform comprising: an electron beam or an ion beam generator generating an electron beam or an ion beam; and a substrate supporting platform supporting a semiconductor substrate, and a surface of the semiconductor substrate is provided with a precursory layer to react with the electron beam or the ion beam.
  • the present invention provides a patterned layer fabricated with the above-mentioned lithographic machine platform, wherein the patterned layer is located on a substrate and a precursory layer reacted with an electron beam or an ion beam is etched selectively to form said patterned layer.
  • the present invention also provides a method for fabricating a patterned layer comprising steps of: providing a semiconductor substrate; forming a precursory layer on the semiconductor substrate; and reacting a part of the precursory layer with an electron beam or an ion beam to vary properties of the precursory layer; and etching the precursory layer selectively to form a patterned layer.
  • FIG. 1 is a diagram schematically showing the etching mask layer of the existing advanced immersion lithographic fabrication process
  • FIG. 2 is a diagram schematically showing the first configuration of the lithographic machine platform according to the present invention
  • FIG. 3( a )- 3 ( b ) are diagrams schematically showing the steps of fabricating a patterned layer used as a hard mask layer by using the first configuration of the lithographic machine platform according to the present invention
  • FIG. 4 is an electron microscope photograph of a gate layer pattern of SRAM formed by a deposited hard mask layer reacted with an electron beam or an ion beam, which are generated by using the first configuration of the lithographic machine platform according to the present invention
  • FIG. 5 is a diagram schematically showing the second configuration of the lithographic machine platform according to the present invention.
  • FIG. 6( a )- 6 ( c ) are diagrams schematically showing the steps of fabricating a patterned layer on a substrate by using the second configuration of the lithographic machine platform according to the present invention.
  • the spirit of the present invention relates to a lithographic machine platform and applications thereof, which forms a patterned layer used as a hard mask layer or other applications on a substrate by using the high lithographic properties of an electron beam or an ion beam.
  • a lithographic machine platform and applications thereof which forms a patterned layer used as a hard mask layer or other applications on a substrate by using the high lithographic properties of an electron beam or an ion beam.
  • an electron beam or an ion beam lithographic machine platform 20 of the present invention comprises: an electron beam or an ion beam generator 22 ; a substrate supporting platform 24 positioned below the electron beam generator or the ion beam generator 22 ; and a precursory gas injector 26 injecting a gas, which is applied to react with an electron beam or an ion beam generated by the electron beam or the ion beam generator 22 .
  • FIG. 3( a )- 3 ( b ) are diagrams schematically showing the steps of fabricating a patterned layer used as a hard mask layer by using the first configuration of the lithographic machine platform according to the present invention.
  • a semiconductor substrate 28 supported on the substrate supporting platform 24 is provided, wherein the substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
  • a precursory gas 30 is injected above the substrate 28 by using the precursory injector 26 , wherein the precursory gas 30 is selected from a precursory gas comprising metals or a precursory gas comprising a dielectric layer.
  • an electron beam or an ion beam 32 generated by the electron beam or the ion beam generator 22 depends on a preset and defined patterns to react with the precursory gas 30 selectively, and then the precursory gas 30 is induced to be deposited on the substrate 28 .
  • a patterned layer 34 used as a hard mask layer is formed on the substrate 28 . In other words, the defined pattern deposition only can be achieved in a step.
  • a pattern of the patterned layer 34 is transferred to the substrate 28 by a dry-etching technology.
  • the precursory gas 30 is able to form deposition depends on a reactive energy given to the precursory gas 30 by the electron beam or the ion beam according to the scanning frequency and the staying time of a fixed point on a region of the preset and defined patterns.
  • the material of the patterned layer 34 depends on a type of the precursory gas 30 , wherein the patterned layer 34 is a metal layer comprising platinum, wolfram, titanium, or tantalum, and the patterned layer 34 is also a dielectric layer comprising silicon dioxide, silicon nitride, or silicon carbide.
  • the precursory gas When the precursory gas is induced to deposit by the electron beam or the ion beam, the precursory gas has the lithographic resolution and high precision pattern transformation of the electron beam or the ion beam lest a photo resistance used as a medium for a pattern transformation be required in the conventional lithographic fabrication process. Besides, the precursory gas is not reacted with the undefined (unirradiated) regions of the electron beam or the ion beam to generate deposition (residual). On the contrary, the existing advanced immersion lithography is moistened and stuck by an immersion liquid to generate a residual and contaminations. Therefore, the method of the present invention has many advanced advantages for the aspect of controlling the yield rate. In fabricating the hard mask layer according to the embodiment, 9 steps can be eliminated as compared with the advanced immersion lithography of the prior art.
  • FIG. 4 is an electron microscope photograph of a gate layer pattern of SRAM formed by a deposited hard mask layer reacted with an electron beam or an ion beam, which are generated by using the first configuration of the lithographic machine platform according to the present invention.
  • the substrate and the precursory gas are a silicon substrate and a gas comprising platinum respectively, and the substrate is grounded though a conductive copper adhesive tape.
  • the correlation parameters of the electron beam or the ion beam comprises a accelerator voltage value, a current value, a scanning pass value, a staying time of a defined region and a dot matrix bitmap, which are 5 kV, 98-500 pA, once, 1 ⁇ s-100 ⁇ s and a format bitmap having 24 bits respectively.
  • an electron beam or an ion beam lithographic machine platform 36 comprises: an electron beam or an ion beam generator 38 and a substrate supporting platform 40 positioned below the electron beam or the ion beam generator 38 .
  • FIG. 6( a )- 6 ( c ) are diagrams schematically showing the steps of fabricating a patterned layer on a substrate by using the second configuration of the lithographic machine platform according to the present invention.
  • a semiconductor substrate 44 is supported on a substrate supporting machine platform 40 , and a precursory layer 42 is formed on a surface of the semiconductor substrate 44 , wherein semiconductor substrate 44 is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds, and the precursory layer 42 comprises metallic materials or dielectric materials.
  • FIG. 6( a )- 6 ( c ) are diagrams schematically showing the steps of fabricating a patterned layer on a substrate by using the second configuration of the lithographic machine platform according to the present invention.
  • a part of the precursory layer 42 a is selectively reacted with an electron beam or an ion beam generated by an electron beam or an ion beam generator 38 according to the preset and defined patterns, and then the properties of the part of the precursory layer 42 a is varied, such as the phase variation, the bonding variation, etc.
  • the precursory layer having different properties is selectively etched to form a patterned layer 48 .
  • the variation for the properties of the precursory layer 42 depends on a reactive energy, which is provided by the electron beam or the ion beam according to the scanning frequency and the staying time of a fixed point on a region of the preset and defined patterns.
  • the hard mask layer is provided to the substrate 34 for proceeding with the subsequent patterned fabrication processes.
  • the present invention provides a lithographic machine platform and applications thereof, which forms a pattern with a high resolution on a substrate without having to acquire additional treatments, such as a film-forming resistive preparation treatment, a development and a hard mask treatment.
  • the present invention has a great developing potential for the lithographic technology in the future.

Abstract

A lithographic machine platform and applications thereof is disclosed. The lithographic machine platform comprises: an electron beam or an ion beam generator generating an electron beam or an ion beam; a substrate supporting platform supporting a substrate; and a precursory gas injector injecting a precursory gas above the substrate. The present invention uses the electron beam or the ion beam to induce the precursory gas to react with the electron beam or the ion beam, and then the precursory gas is deposited on the substrate. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a lithographic technology, particularly to an electron beam or ion beam lithographic machine platform and applications thereof, which is applied to the lithographic technology.
  • 2. Description of the Related Art
  • Presently, in a advanced lithographic fabrication process, patterns are generated by using an optical method, an electron beam, a nano impression method on a specific polymer coating layer (namely, the polymer material that is sensitive to lights or electron beams), also called resist, through chemical reactions or variations of thermal current stress and then used as a required mask when the subsequent pattern is transferred. But the resist usually requires complicated thermal treatment, exposure and development or the hull release fabrication process. Besides, for the lithography technology with a high resolution, a thickness of the resist is not enough for consumption of the subsequent etching fabrication processes, and the resist further requires the bottom anti-reflection coating layer (BARC) in the optical lithography technology and the anti-etching film used as a mask, such as a silicon oxynitride hard mask. Therefore, many films need to be deposited, treated and etched. For example, refer to FIG. 1 showing the etching mask layer of the advanced immersion lithography fabrication process now. In order to sustain the consumption of the subsequent etching fabrication processes, the etching mask layer 10 comprises two hard masks (ACL/SiON) 12-14, a bottom anti-reflection coating layer 16, and a polymer coating layer 18. After the etching mask layer 10 is implemented with an exposure fabrication process, the polymer coating layer 18 is sequentially implemented with a post-exposure bake, a development and a hard baking fabrication process, and then the anti-reflection layer 16 and the hard mask layer 12 are etched, then the polymer coating layer 18 and the anti-reflection layer 16 are removed. Finally, the substrate 19 is etched. In other words, this procedure has to go through 11 steps. As such this procedure is quite complicated and time-consuming. When a process is added to this procedure, the possibility of abnormal fabrication process and products having defects is increased, and thus the production yield is decreased.
  • In view of the problems and shortcomings of the prior art, the present invention provides a lithographic machine platform and applications thereof, so as to solve the afore-mentioned problems of the prior art.
    • SUMMARY OF THE INVENTION
  • The primary objective of the present invention is to provide a lithographic machine platform and application thereof, whereby using an electron beam or an ion beam to induce a precursory gas or a precursory layer to react with the electron beam or the ion beam, and the precursory gas or the precursory layer is deposited to form a patterned layer with high resolution on a substrate lest a photo resistance used as a medium for a pattern transformation be required in the conventional lithographic fabrication process.
  • Another objective of the present invention is to provide a lithographic machine platform and application thereof, wherein a precursory gas is not reacted with the undefined (un-irradiated) regions of an electron beam or an ion beam to generate deposition (residual). On the contrary, the existing advanced immersion lithography is moistened and stuck by an immersion liquid to create residual and contaminations.
  • Further objective of the present invention is to provide a lithographic machine platform and application thereof, wherein not only number of the steps of the lithographic fabrication process and the fabrication cost can be reduced but abnormal fabrication processes and production defects caused by the minute and complicated fabrication process steps can be reduced, and then the production yield is increased.
  • To achieve the abovementioned objectives, the present invention provides a lithographic machine platform comprising: an electron beam or an ion beam generator generating an electron beam or an ion beam; a substrate supporting platform supporting a semiconductor substrate; and a precursory gas injector injecting a precursory gas on a surface of the substrate. The precursory gas is reacted with the electron beam or the ion beam to form a patterned layer deposited on the surface of the substrate.
  • The present invention also provides a patterned layer fabricated with the above-mentioned lithographic machine platform, wherein the patterned layer is formed on a substrate and a precursory gas reacted with an electron beam or an ion beam is deposited to form the patterned layer.
  • The present invention also provides a method for fabricating a patterned layer comprising steps of: providing a semiconductor substrate; forming a precursory gas on the semiconductor substrate; and depositing to form a patterned layer on the semiconductor substrate by reacting the precursory gas with an electron beam or an ion beam.
  • The present invention further provides another lithographic machine platform comprising: an electron beam or an ion beam generator generating an electron beam or an ion beam; and a substrate supporting platform supporting a semiconductor substrate, and a surface of the semiconductor substrate is provided with a precursory layer to react with the electron beam or the ion beam.
  • The present invention provides a patterned layer fabricated with the above-mentioned lithographic machine platform, wherein the patterned layer is located on a substrate and a precursory layer reacted with an electron beam or an ion beam is etched selectively to form said patterned layer.
  • The present invention also provides a method for fabricating a patterned layer comprising steps of: providing a semiconductor substrate; forming a precursory layer on the semiconductor substrate; and reacting a part of the precursory layer with an electron beam or an ion beam to vary properties of the precursory layer; and etching the precursory layer selectively to form a patterned layer.
  • Below, the embodiments are described in detail in cooperation with the drawings to make easily understood the characteristics, technical contents and accomplishments of the present invention.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a diagram schematically showing the etching mask layer of the existing advanced immersion lithographic fabrication process;
  • FIG. 2 is a diagram schematically showing the first configuration of the lithographic machine platform according to the present invention;
  • FIG. 3( a)-3(b) are diagrams schematically showing the steps of fabricating a patterned layer used as a hard mask layer by using the first configuration of the lithographic machine platform according to the present invention;
  • FIG. 4 is an electron microscope photograph of a gate layer pattern of SRAM formed by a deposited hard mask layer reacted with an electron beam or an ion beam, which are generated by using the first configuration of the lithographic machine platform according to the present invention;
  • FIG. 5 is a diagram schematically showing the second configuration of the lithographic machine platform according to the present invention; and
  • FIG. 6( a)-6(c) are diagrams schematically showing the steps of fabricating a patterned layer on a substrate by using the second configuration of the lithographic machine platform according to the present invention.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The spirit of the present invention relates to a lithographic machine platform and applications thereof, which forms a patterned layer used as a hard mask layer or other applications on a substrate by using the high lithographic properties of an electron beam or an ion beam. According to the above-mentioned description, the utilization and selection of the material of a precursory thing and a patterned layer, or the variations of process parameters are both within a spiritual scope of the present invention.
  • Refer to FIG. 2, which are diagrams schematically showing the first configuration of the lithographic machine platform according to the present invention. As shown in FIG. 2, an electron beam or an ion beam lithographic machine platform 20 of the present invention comprises: an electron beam or an ion beam generator 22; a substrate supporting platform 24 positioned below the electron beam generator or the ion beam generator 22; and a precursory gas injector 26 injecting a gas, which is applied to react with an electron beam or an ion beam generated by the electron beam or the ion beam generator 22.
  • Next, refer to FIG. 3( a)-3(b), which are diagrams schematically showing the steps of fabricating a patterned layer used as a hard mask layer by using the first configuration of the lithographic machine platform according to the present invention. Firstly, as shown in FIG. 3( a), a semiconductor substrate 28 supported on the substrate supporting platform 24 is provided, wherein the substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds. Next, a precursory gas 30 is injected above the substrate 28 by using the precursory injector 26, wherein the precursory gas 30 is selected from a precursory gas comprising metals or a precursory gas comprising a dielectric layer. Next, an electron beam or an ion beam 32 generated by the electron beam or the ion beam generator 22 depends on a preset and defined patterns to react with the precursory gas 30 selectively, and then the precursory gas 30 is induced to be deposited on the substrate 28. Finally, as shown in FIG. 3( b), a patterned layer 34 used as a hard mask layer is formed on the substrate 28. In other words, the defined pattern deposition only can be achieved in a step. Next, a pattern of the patterned layer 34 is transferred to the substrate 28 by a dry-etching technology.
  • Whether the precursory gas 30 is able to form deposition depends on a reactive energy given to the precursory gas 30 by the electron beam or the ion beam according to the scanning frequency and the staying time of a fixed point on a region of the preset and defined patterns. And the material of the patterned layer 34 depends on a type of the precursory gas 30, wherein the patterned layer 34 is a metal layer comprising platinum, wolfram, titanium, or tantalum, and the patterned layer 34 is also a dielectric layer comprising silicon dioxide, silicon nitride, or silicon carbide.
  • When the precursory gas is induced to deposit by the electron beam or the ion beam, the precursory gas has the lithographic resolution and high precision pattern transformation of the electron beam or the ion beam lest a photo resistance used as a medium for a pattern transformation be required in the conventional lithographic fabrication process. Besides, the precursory gas is not reacted with the undefined (unirradiated) regions of the electron beam or the ion beam to generate deposition (residual). On the contrary, the existing advanced immersion lithography is moistened and stuck by an immersion liquid to generate a residual and contaminations. Therefore, the method of the present invention has many advanced advantages for the aspect of controlling the yield rate. In fabricating the hard mask layer according to the embodiment, 9 steps can be eliminated as compared with the advanced immersion lithography of the prior art.
  • Refer to FIG. 4, which is an electron microscope photograph of a gate layer pattern of SRAM formed by a deposited hard mask layer reacted with an electron beam or an ion beam, which are generated by using the first configuration of the lithographic machine platform according to the present invention. In this embodiment, the substrate and the precursory gas are a silicon substrate and a gas comprising platinum respectively, and the substrate is grounded though a conductive copper adhesive tape. The correlation parameters of the electron beam or the ion beam comprises a accelerator voltage value, a current value, a scanning pass value, a staying time of a defined region and a dot matrix bitmap, which are 5 kV, 98-500 pA, once, 1 μs-100 μs and a format bitmap having 24 bits respectively.
  • Refer to FIG. 5, which is a diagram schematically showing the second configuration of the lithographic machine platform according to the present invention. As shown in FIG. 5, an electron beam or an ion beam lithographic machine platform 36 comprises: an electron beam or an ion beam generator 38 and a substrate supporting platform 40 positioned below the electron beam or the ion beam generator 38.
  • Refer to FIG. 6( a)-6(c), which are diagrams schematically showing the steps of fabricating a patterned layer on a substrate by using the second configuration of the lithographic machine platform according to the present invention. Firstly, as shown in FIG. 6( a), a semiconductor substrate 44 is supported on a substrate supporting machine platform 40, and a precursory layer 42 is formed on a surface of the semiconductor substrate 44, wherein semiconductor substrate 44 is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds, and the precursory layer 42 comprises metallic materials or dielectric materials. Next, as shown in FIG. 6( b), a part of the precursory layer 42 a is selectively reacted with an electron beam or an ion beam generated by an electron beam or an ion beam generator 38 according to the preset and defined patterns, and then the properties of the part of the precursory layer 42 a is varied, such as the phase variation, the bonding variation, etc. Finally, as shown in FIG. 6( c), the precursory layer having different properties is selectively etched to form a patterned layer 48. The variation for the properties of the precursory layer 42 depends on a reactive energy, which is provided by the electron beam or the ion beam according to the scanning frequency and the staying time of a fixed point on a region of the preset and defined patterns.
  • When the patterned layer is used as a hard mask layer, the hard mask layer is provided to the substrate 34 for proceeding with the subsequent patterned fabrication processes.
  • In conclusion, the present invention provides a lithographic machine platform and applications thereof, which forms a pattern with a high resolution on a substrate without having to acquire additional treatments, such as a film-forming resistive preparation treatment, a development and a hard mask treatment. The present invention has a great developing potential for the lithographic technology in the future.
  • The embodiments described above are only to exemplify the present invention but not to limit the scope of the present invention. Therefore, any equivalent modification or variation according to the shape, structures, characteristics and spirit disclosed in the present invention is to be also included within the scope of the present invention.

Claims (26)

1. A lithographic machine platform comprising:
an electron beam or an ion beam generator generating an electron beam or an ion beam;
a substrate supporting platform supporting a semiconductor substrate; and
a precursory gas injector injecting a precursory gas on a surface of said substrate, and said precursory gas is reacted with said electron beam or said ion beam to form a patterned layer deposited on said surface of said substrate.
2. The lithographic machine platform according to claim 1, wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
3. The lithographic machine platform according to claim 1, wherein said precursory gas is selected from a precursory gas comprising metals or a precursory gas comprising a dielectric layer.
4. The lithographic machine platform according to claim 1, wherein said patterned layer is a metal layer or a dielectric layer.
5. The lithographic machine platform according to claim 1, wherein said patterned layer is a metal layer comprising platinum, wolfram, titanium, or tantalum.
6. The lithographic machine platform according to claim 1, wherein said patterned layer comprises silicon dioxide, silicon nitride, or silicon carbide.
7. The lithographic machine platform according to claim 1, wherein said patterned layer is used as a hard mask layer.
8. A patterned layer fabricated with the lithographic machine platform described in claim 1 is located on a substrate, and a precursory gas reacted with an electron beam or an ion beam is deposited to form said patterned layer.
9. The patterned layer according to claim 8, wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
10. The patterned layer according to claim 8, wherein said patterned layer is used as a hard mask layer.
11. A method for fabricating a patterned layer comprising steps of:
providing a semiconductor substrate;
forming a precursory gas on said semiconductor substrate; and
depositing to form a patterned layer on said semiconductor substrate by reacting said precursory gas with an electron beam or an ion beam.
12. The method for fabricating a patterned layer according to claim 11, wherein said precursory gas is selected from a precursory gas comprising metals or a precursory gas comprising a dielectric layer.
13. The method for fabricating a patterned layer according to claim 11, wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
14. The method for fabricating a patterned layer according to claim 11, wherein said patterned layer is used as a hard mask layer.
15. A lithographic machine platform comprising:
an electron beam or an ion beam generator generating an electron beam or an ion beam; and
a substrate supporting platform supporting a semiconductor substrate, and a surface of said semiconductor substrate is provided with a precursory layer to react with said electron beam or said ion beam.
16. The lithographic machine platform according to claim 15, wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
17. The lithographic machine platform according to claim 15, wherein precursory layer comprises metallic materials or dielectric materials.
18. The lithographic machine platform according to claim 15, wherein said lithographic machine platform is applied to fabricate a hard mask layer.
19. A patterned layer fabricated with the lithographic machine platform described in claim 15 is located on a substrate, and a precursory layer reacted with an electron beam or an ion beam is etched selectively to form said patterned layer.
20. The patterned layer according to claim 19, wherein said precursory layer comprises metallic materials or dielectric materials.
21. The patterned layer according to claim 19, wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
22. The patterned layer according to claim 19, wherein said patterned layer is used as a hard mask layer.
23. A method for fabricating a patterned layer comprising steps:
providing a semiconductor substrate;
forming a precursory layer on said semiconductor substrate; and
reacting a part of said precursory layer with an electron beam or an ion beam to vary properties of said precursory layer; and
etching said precursory layer selectively to form a patterned layer.
24. The method for fabricating a patterned layer according to claim 23, wherein said precursory layer comprises metallic materials or dielectric materials.
25. The method for fabricating a patterned layer according to claim 23, wherein said substrate is selected from a silicon substrate, a germanium substrate, a substrate consisting of III-V group chemical compounds, or a substrate consisting of II-VI group chemical compounds.
26. The method for fabricating a patterned layer according to claim 23, wherein said patterned layer is used as a hard mask layer.
US12/620,418 2009-03-10 2009-11-17 Lithographic machine platform and applications thereof Abandoned US20100233437A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/684,019 US8679728B2 (en) 2009-03-10 2012-11-21 Method for fabricating patterned layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW98107718 2009-03-10
TW098107718A TWI407264B (en) 2009-03-10 2009-03-10 Microcomputer and its application

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/684,019 Continuation-In-Part US8679728B2 (en) 2009-03-10 2012-11-21 Method for fabricating patterned layer

Publications (1)

Publication Number Publication Date
US20100233437A1 true US20100233437A1 (en) 2010-09-16

Family

ID=42730950

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/620,418 Abandoned US20100233437A1 (en) 2009-03-10 2009-11-17 Lithographic machine platform and applications thereof
US13/684,019 Expired - Fee Related US8679728B2 (en) 2009-03-10 2012-11-21 Method for fabricating patterned layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/684,019 Expired - Fee Related US8679728B2 (en) 2009-03-10 2012-11-21 Method for fabricating patterned layer

Country Status (2)

Country Link
US (2) US20100233437A1 (en)
TW (1) TWI407264B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9934969B2 (en) 2014-01-31 2018-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Charged-particle-beam patterning without resist
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420067A (en) * 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5549780A (en) * 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
US5804980A (en) * 1994-08-31 1998-09-08 Nec Corporation Method and system for testing an interconnection in a semiconductor integrated circuit
US6093246A (en) * 1995-09-08 2000-07-25 Sandia Corporation Photonic crystal devices formed by a charged-particle beam
US6787783B2 (en) * 2002-12-17 2004-09-07 International Business Machines Corporation Apparatus and techniques for scanning electron beam based chip repair
US20070210393A1 (en) * 2004-04-08 2007-09-13 Jean-Luc Rehspringer Lithographic Method Products Obtained And Use Of Said Method
US20080304522A1 (en) * 2006-04-04 2008-12-11 Mills Randell L Catalyst laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420027A (en) * 1991-01-10 1995-05-30 Board Of Regents, The University Of Texas System Methods and compositions for the expression of biologically active fusion proteins comprising a eukaryotic cytochrome P450 fused to a reductase in bacteria
US5637440A (en) * 1993-12-27 1997-06-10 Mitsubishi Materials Corporation Composition for forming metal oxide thin film pattern and method for forming metal oxide thin film pattern
EP1617290A1 (en) * 2004-07-13 2006-01-18 International Business Machines Corporation Apparatus and method for maskless lithography

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420067A (en) * 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
US5549780A (en) * 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
US5804980A (en) * 1994-08-31 1998-09-08 Nec Corporation Method and system for testing an interconnection in a semiconductor integrated circuit
US6093246A (en) * 1995-09-08 2000-07-25 Sandia Corporation Photonic crystal devices formed by a charged-particle beam
US6787783B2 (en) * 2002-12-17 2004-09-07 International Business Machines Corporation Apparatus and techniques for scanning electron beam based chip repair
US20070210393A1 (en) * 2004-04-08 2007-09-13 Jean-Luc Rehspringer Lithographic Method Products Obtained And Use Of Said Method
US20080304522A1 (en) * 2006-04-04 2008-12-11 Mills Randell L Catalyst laser

Also Published As

Publication number Publication date
TW201033746A (en) 2010-09-16
US20130084530A1 (en) 2013-04-04
US8679728B2 (en) 2014-03-25
TWI407264B (en) 2013-09-01

Similar Documents

Publication Publication Date Title
US20030062334A1 (en) Method for forming a micro-pattern on a substrate by using capillary force
US20100086877A1 (en) Pattern forming method and pattern form
CN101135842B (en) Method for copying nano autogram formwork
US9469525B2 (en) Modified surface for block copolymer self-assembly
JPH03114049A (en) Formation of silicon shadow mask
US8349527B2 (en) Conductive layer including implanted metal ions
KR101055962B1 (en) Thin film pattern formation method
JPS5811512B2 (en) Pattern formation method
US8445183B2 (en) Method of manufacturing semiconductor device and pattern formation method
CN109786220A (en) The forming method of semiconductor structure
CN110989301A (en) Based on dry development and metal doping of Sb2Photoetching method of Te photoresist
US20100233437A1 (en) Lithographic machine platform and applications thereof
JP2007253544A (en) Imprinting method
CN110783263B (en) Method for forming semiconductor structure
JP5042456B2 (en) Manufacturing method of stencil mask
KR100826587B1 (en) Thin film patterning method using atomic force microscope lithography system
JPS6376438A (en) Pattern formation
US20050255411A1 (en) Multiple exposure and shrink to achieve reduced dimensions
US7897301B2 (en) Fine pattern forming method and stamper
JPH0542810B2 (en)
WO2003079112A1 (en) Method of producing an etch-resistant polymer structure using electron beam lithography
CN116313756A (en) Method for implanting oxygen atoms into monocrystalline silicon surface layer, preparation method and detection method of silicon nano channel
JPS6029921B2 (en) Diffraction grating manufacturing method
JPS58110044A (en) Pattern formation
JPH01173716A (en) Manufacture of x-ray mask

Legal Events

Date Code Title Description
AS Assignment

Owner name: NATIONAL APPLIED RESEARCH LABORATORIES, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HUANG, CHIEN-CHAO;CHEN, CHUN-CHI;SHY, SHYI-LONG;AND OTHERS;REEL/FRAME:023533/0253

Effective date: 20091101

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION