US20090087998A1 - Diffusion barrier layer and method for manufacturing a diffusion barrier layer - Google Patents
Diffusion barrier layer and method for manufacturing a diffusion barrier layer Download PDFInfo
- Publication number
- US20090087998A1 US20090087998A1 US12/330,903 US33090308A US2009087998A1 US 20090087998 A1 US20090087998 A1 US 20090087998A1 US 33090308 A US33090308 A US 33090308A US 2009087998 A1 US2009087998 A1 US 2009087998A1
- Authority
- US
- United States
- Prior art keywords
- layers
- substrate
- diffusion barrier
- layer
- process chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000004888 barrier function Effects 0.000 title claims abstract description 34
- 238000009792 diffusion process Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 239000003989 dielectric material Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 72
- 238000000151 deposition Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 230000005693 optoelectronics Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000013086 organic photovoltaic Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical compound NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
- Y10T428/325—Magnetic layer next to second metal compound-containing layer
Definitions
- a (solid state) ultra high diffusion barrier and encapsulation layer for optoelectronic devices consisting of multiple inorganic layers, which are deposited by a single step vacuum deposition process.
- the present invention relates generally to optoelectronic devices and more specifically to environmentally sensitive optoelectronic devices.
- These devices include organic optoelectronic devices such as organic light emitting diodes (OLED) be it either small molecules or polymer type, organic photovoltaic devices, organic thin film transistors, and organic electrochromic displays, electrophoretic inks, solar devices, and LCD's in general (including applications for watches, cell phones etc.).
- OLED organic light emitting diodes
- Thin polymeric substrates and organic structures have a diffusion coefficient for oxygen and for water, which is far too high to protect the enclosed structures from degradation.
- Thin polymeric substrates and organic structures are susceptible to degradation, deformation and building up of thermally induced stresses when the functional layers are deposited due to the process temperature created intentionally or unintentionally during the deposition.
- FIG. 1 shows the typical build up for an organic optoelectronic device on an organic substrate: in order to protect the device (here an OLED pixel with its electrodes) from the environment, a barrier layer between the polymeric substrate and the device, and an encapsulation layer covering the whole device are necessary.
- FIG. 1 shows a cross section of an OLED device, with an flexible substrate 1 , a barrier layer 2 , a transparent conductive oxide (TCO) layer 3 , OLED layer(s) 4 (organic), cathode 5 and encapsulation layer 6
- TCO transparent conductive oxide
- Encapsulation layers have been proposed previously as a combination of a sputtered inorganic layer such as AlO x , SiN, SiON plus a polymer plus another inorganic layer (I-P-I structure).
- a stack a sequence of I-P-I-P-I . . . layers have been proposed to further improve the properties of the encapsulation layer (system).
- the inorganic layer prevents the water diffusion while the organic layer have the purpose to planarize the inorganic layer and to provide a new smooth surface to deposit for the next inorganic layer. Pinhole-, particle-, and step coverage are further important functions of the organic layer.
- FIG. 1 shows the typical build up for an organic optoelectronic device on an organic substrate, comprising several layers (Order from bottom to top: flexible substrate, barrier layer, TCO (transparent conductive oxide) layer, OLED (organic layers), cathode, and on top: encapsulation layer)
- FIG. 2 shows the H 2 0 permeation rate in grams per day and square meter at 25 degrees Celsius for certain specifications for OPV (organic photo voltaic) and OLED applications and on the same scale typical permeation rates for certain state-of-the-art coatings.
- OPV organic photo voltaic
- FIG. 3 shows a further embodiment of the invention.
- FIG. 4 shows a scanning electron micrograph (SEM) with the excellent step coverage of an inorganic layer according to the invention.
- the present invention provides a diffusion barrier 2 and an encapsulation layer 6 by depositing a set of multiple inorganic layers (preferably of silicon nitride, SiNx) in a single step vacuum deposition process.
- a set of multiple inorganic layers preferably of silicon nitride, SiNx
- FIG. 3 summarizes one embodiment of the present invention:
- a flexible substrate 10 shows barrier layer(s) 11 .
- a stack of (multiple) inorganic layers 12 has been deposited, however shows, due to the manufacturing process, pinhole defects 13 and particles 14 .
- Each layer of layer stack 12 shields against the environment independently and the average diffusion path lengths between defects are increased significantly.
- the solution of the invention is based on multiple inorganic layers (preferably of silicon nitride).
- This plurality of layers is deposited by an essentially single step PECVD process (i.e. including only one loading/unloading operation into the process chamber), directly on polymeric substrates (which are known in the art) with hard coatings (which are also known in the art).
- PECVD process i.e. including only one loading/unloading operation into the process chamber
- polymeric substrates which are known in the art
- hard coatings which are also known in the art.
- These layers may thus discreetly vary, not only in their stoechiometric composition, but also in the elements from which they are composed.
- the layers according to the present invention provide faster packaging than prior art and must prevent damage to the device from moisture and oxygen, thereby improving the lifetime of the device.
- Such layers can also serve as “ultra high diffusion barrier” on polymeric substrates to protect the stack from the attack of moisture and gas through the substrate surface.
- the process parameters are adjusted for each application, e.g. encapsulation on the device side and diffusion barrier on the polymeric substrate side or sides.
- conformal and defect-less layers at relatively low process temperature are required to avoid mechanical deformation of the substrate and damage to the temperature sensitive OLED device.
- a diffusion barrier system for a display device comprises a layer system with at least two layers of dielectric material, wherein at least two adjacent layers of that layer system comprise the same material.
- said dielectric material is one of an nitride, oxide, carbide and oxynitride or combinations thereof.
- Said dielectric material may comprise a metal or a semiconductor, and again the metal is one of Al, Cr, Cu, Ge, In, Ir Sb, Sn, Ta, Ti, Zr or combinations thereof.
- the dielectric material comprises silicon nitride or silicon oxynitride (SiO x N y ).
- a display device with such diffusion barrier layer can be based on a substrate chosen from the group of glass, metal, polymer or paper.
- a method for manufacturing such a diffusion barrier system in a single process chamber of a plasma deposition system will have the steps of introducing a substrate to be treated in said process chamber, discretely varying in a controlled manner during deposition at least one of the process parameters in the process chamber gas flow, power, pressure, temperature without completely interrupting such process parameter, such that each variation results in a layer with different properties. Finally the substrate is removed from said process chamber.
- the “Ca test” is a permeation test, which is based on the corrosion of reactive metal films. This all-optical method is used to quantify the water transmission rate of substrates provided with high performance diffusion barriers and is known to those skilled in the art. A glass plate with a Calcium coating is glued to the test substrate (such as polymeric substrates with or without diffusion barrier layer and possibly also a reference glass substrate). Calcium readily reacts with water and oxygen entering the test substrate and becomes progressively transparent. This leads to a change in the optical transmission of Ca coating, which can be monitored in time. The change in the transmission of the cells is then used to quantify effective permeation rates (WVTR). However, with this method, the change in the WVTR is also due to the penetration of water through the “glue” material.
- WVTR effective permeation rates
- a reference glass substrate which normally has a WVTR of ⁇ 1 ⁇ 10 ⁇ 6 is also tested.
- the test glass showed a WVTR of ⁇ 3 ⁇ 10 ⁇ 5 and relative to the reference, the WVTR of the polymeric substrate/barrier layer system is measured to 1.5 ⁇ 10 ⁇ 4 .
- the multilayer silicon nitride stack deposited at 120° C. showed a WVTR of 5.66 ⁇ 10 ⁇ 4 .
- the process parameters By adjusting the process parameters, one can further reduce the permeation rates to the same level or even lower than the values for 175° C. process without loss of functionality.
- the deposition temperature has further been lowered to 80° C. with promising results.
- silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) layers are deposited alternatingly on top of each other.
- the preferred number n of inorganic layers according to the invention is at least 2, with a preferred range of 2-10. Even more layers may be useful, and can be adjusted according to specific requirements.
- the thickness of each layer can vary between 15-100 nm (the upper limit can be adjusted according to specific requirements).
- the values for x in SiN x range between 0 and 4/3.
- the barrier layers were prepared with different polymeric substrate pre-treatment, such as cleaning in an ultrasonic bath in order to reduce the particle concentration prior to the deposition, since cracks and micro-cracks initiate at microscopic defect sites, thereby, reducing the permeation rate and the mechanical stability.
- the layers according to the invention are transparent in the visible range, which is a requirement for most structures of optoelectronic devices.
- Silicon nitride multilayer barriers are excellent, both from the mechanical and from the processing standpoint. They are able to resist cracking during OLED processing and possess excellent foldability.
- the crack resistance of the layers is decisive, since mechanical failure of the diffusion barriers will directly result in a shortened lifetime of the device.
- the failure onset of the layers according to the invention is equal to approx. 1.5% strain, which enables a minimum achievable curvature radius of approximately 3-4 mm for a 100 ⁇ m thick substrate. Adhesion of the layers to both glass and to polymeric substrates is found to be very high.
- the analysis prove a very high tensile strength (2.5 GPa) and very high interfacial shear strength (230 MPa) for the layers on polymer, indicating that a strong interface is created during plasma deposition of the nitrides.
- the tensile failure of the SiN x is coupled to that of the underlying hard coat.
- the cohesion and adhesion of SiN x on polymeric substrate with and without hard coat layer before and after hydrothermal loading (1 h in water at RT) are found to be essentially unchanged.
- FIG. 4 illustrates in a scanning electron micrograph the excellent step coverage of an inorganic layer according to the invention. Using a PECVD single run multi layer process, complex structures are covered perfectly.
- the production of multilayer inorganic barrier is reproducible, and provides high throughput and low risk for contamination due to the single step process.
- the multilayer provides no mechanical miss-match and is chemically and mechanically stable.
- the inorganic layers according to the present invention are generally chemically very stable (unlike the inorganic/organic stacks in prior art), excellent etching resistance is achieved.
- the chemical compatibility of the prior art diffusion barriers with the OLED processing is a matter of concern.
- Alumina of prior art is not resistant against common etching solutions and the adhesion between the organic and inorganic layer fails easily for instance after processing steps (e.g. etching) and after mechanical and thermal cycling. Due to the inherent stack instability, mechanical failure of such stacks is inevitable.
Abstract
A diffusion barrier system for a display device comprising a layer system with at least two layers of dielectric material, wherein at least two adjacent layers of that layer system comprise the same material. A respective method for manufacturing such a diffusion barrier system in a single process chamber of a plasma deposition system has the steps of introducing a substrate to be treated in said process chamber, discretely varying in a controlled manner during deposition at least one process parameter in the process chamber, without completely interrupting such process parameter, which results in layers with different properties and finally unloading said substrate from said process.
Description
- A (solid state) ultra high diffusion barrier and encapsulation layer for optoelectronic devices, consisting of multiple inorganic layers, which are deposited by a single step vacuum deposition process.
- The present invention relates generally to optoelectronic devices and more specifically to environmentally sensitive optoelectronic devices. These devices include organic optoelectronic devices such as organic light emitting diodes (OLED) be it either small molecules or polymer type, organic photovoltaic devices, organic thin film transistors, and organic electrochromic displays, electrophoretic inks, solar devices, and LCD's in general (including applications for watches, cell phones etc.).
- Many such optoelectronic devices are known in the art. However, specifically organic optoelectronic devices such as OLEDs have not yet made their predicted significant economic and technical breakthrough. This is partially due to the fact that the organic structures and the cathodes need to be heavily protected from the environment, specifically from oxygen, from water and from water vapor.
- Currently, many optoelectronic devices (such as LCD and OLED displays) are manufactured by depositing thin film structures on a glass substrate, which has excellent optical properties and which is also an excellent environmental barrier. Most organic optoelectronic devices today are also manufactured on glass substrates and are encapsulated in glass (or in metallic-) structures. By its brittle nature however, glass does not provide flexibility and light weight. By using thin, flexible polymeric substrates for OLEDs in particular—which is known in the art—and by thin encapsulation layers for the device, a high degree of flexibility and lightweight shall be obtained. However, the following problems arise simultaneously:
- Thin polymeric substrates and organic structures have a diffusion coefficient for oxygen and for water, which is far too high to protect the enclosed structures from degradation.
- Thin polymeric substrates and organic structures are susceptible to degradation, deformation and building up of thermally induced stresses when the functional layers are deposited due to the process temperature created intentionally or unintentionally during the deposition.
- For illustration,
FIG. 1 shows the typical build up for an organic optoelectronic device on an organic substrate: in order to protect the device (here an OLED pixel with its electrodes) from the environment, a barrier layer between the polymeric substrate and the device, and an encapsulation layer covering the whole device are necessary.FIG. 1 shows a cross section of an OLED device, with anflexible substrate 1, abarrier layer 2, a transparent conductive oxide (TCO)layer 3, OLED layer(s) 4 (organic),cathode 5 and encapsulation layer 6 - Both, the
organic layers 4 and also themetallic cathode 5 need to be protected from oxygen and vapor diffusion, the market requires that the device to be light weight and flexible, the functional layers to be transparent for light of the desired wavelength, the device to be easily manufacturable and the functional layers to have excellent mechanical properties. Additionally, the encapsulation layer 6 needs to offer some mechanical and chemical stability, must seal off the device hermetically and must closely fill the complex top structure of the device during application of the film (step coverage). - Encapsulation layers have been proposed previously as a combination of a sputtered inorganic layer such as AlOx, SiN, SiON plus a polymer plus another inorganic layer (I-P-I structure). Alternatively a stack, a sequence of I-P-I-P-I . . . layers have been proposed to further improve the properties of the encapsulation layer (system). In such an arrangement the inorganic layer prevents the water diffusion while the organic layer have the purpose to planarize the inorganic layer and to provide a new smooth surface to deposit for the next inorganic layer. Pinhole-, particle-, and step coverage are further important functions of the organic layer.
- In “Thin film encapsulation of OLED Displays with a NONON Stack” (Lifka/va Esch/Rosink in: SID 04 Digest, p. 1384 ff) the authors describe a sequence of SiN-SiO-SiN layers (NON) or, widened about further layers of that kind as NONON layer. WO 03/050894 describes basically the same system with typical layer thicknesses of 200 nm SiN, 300 nm SiO and again 200 nm of SiN. Similar related Prior Art is described in U.S. Pat. No. 6,268,695, U.S. Pat. No. 6,638,645, U.S. Pat. No. 6,576,351, U.S. Pat. No. 6,573,652, U.S. Pat. No. 6,597,111 and SID 2003, Baltimore, Proceeding 21.1/A. Yoshida.
- Since prior art uses a succession of multiple organic and inorganic layers for the intended barriers, these stacks are expensive and difficult to produce, because they require several different process steps.
- In consequence, a coating system suitable for such applications must show several, independent, separable process chambers. Besides the disadvantage of being costly for mass production due to the low throughput, there is also the risk for contamination during the transferring process from (process-) chamber to chamber for the stack formation. In stacks where organic and inorganic materials are layered alternatingly, problems also arise due to the mismatch in mechanical and chemical properties of organic and inorganic materials: different thermal expansion coefficients, insufficient adhesion on each other and many more.
- In general, the chemical compatibility of such barrier stacks with the OLED process is a matter of concern.
- When glass or metal lids are alternatively used as an environmental encapsulation, flexibility and lightweight is lost and when single inorganic layers (such as silicon nitride layers) are used, the requirements for permeability are not fulfilled.
-
FIG. 1 shows the typical build up for an organic optoelectronic device on an organic substrate, comprising several layers (Order from bottom to top: flexible substrate, barrier layer, TCO (transparent conductive oxide) layer, OLED (organic layers), cathode, and on top: encapsulation layer) -
FIG. 2 shows the H20 permeation rate in grams per day and square meter at 25 degrees Celsius for certain specifications for OPV (organic photo voltaic) and OLED applications and on the same scale typical permeation rates for certain state-of-the-art coatings. -
FIG. 3 shows a further embodiment of the invention. -
FIG. 4 shows a scanning electron micrograph (SEM) with the excellent step coverage of an inorganic layer according to the invention. - The present invention provides a
diffusion barrier 2 and an encapsulation layer 6 by depositing a set of multiple inorganic layers (preferably of silicon nitride, SiNx) in a single step vacuum deposition process. -
FIG. 3 summarizes one embodiment of the present invention: Aflexible substrate 10 shows barrier layer(s) 11. A stack of (multiple)inorganic layers 12 has been deposited, however shows, due to the manufacturing process,pinhole defects 13 andparticles 14. Each layer of layer stack 12 shields against the environment independently and the average diffusion path lengths between defects are increased significantly. - The solution of the invention is based on multiple inorganic layers (preferably of silicon nitride). This plurality of layers is deposited by an essentially single step PECVD process (i.e. including only one loading/unloading operation into the process chamber), directly on polymeric substrates (which are known in the art) with hard coatings (which are also known in the art). By essentially and discretely controlling the atmospheric conditions (of NH3, H2, SiH4, N2) and other process parameters such as process pressure, process power, and substrate temperature during the single step PECVD deposition process, several discrete layers of inorganic material are deposited.
- These layers may thus discreetly vary, not only in their stoechiometric composition, but also in the elements from which they are composed.
- The layers according to the present invention provide faster packaging than prior art and must prevent damage to the device from moisture and oxygen, thereby improving the lifetime of the device. Such layers can also serve as “ultra high diffusion barrier” on polymeric substrates to protect the stack from the attack of moisture and gas through the substrate surface. In this case, the process parameters are adjusted for each application, e.g. encapsulation on the device side and diffusion barrier on the polymeric substrate side or sides. However, in both cases, conformal and defect-less layers at relatively low process temperature are required to avoid mechanical deformation of the substrate and damage to the temperature sensitive OLED device.
- Due to the fact that multiple discrete layers are deposited and present horizontally, the effect of defects (such as
particles 14 and pinhole defects 13) are minimal perpendicular to the plane of attack. Unwanted chemical agents such as oxygen and vapor statistically find much less direct access paths across the multilayer inorganic stacks than in a much thicker single layer barrier with the same number of defects. This is why the diffusion coefficient across such multilayer inorganic stacks is much lower than across a single layer with the same overall thickness. - In a first embodiment a diffusion barrier system for a display device comprises a layer system with at least two layers of dielectric material, wherein at least two adjacent layers of that layer system comprise the same material. In a further embodiment said dielectric material is one of an nitride, oxide, carbide and oxynitride or combinations thereof. Said dielectric material may comprise a metal or a semiconductor, and again the metal is one of Al, Cr, Cu, Ge, In, Ir Sb, Sn, Ta, Ti, Zr or combinations thereof. In a further preferred embodiment the dielectric material comprises silicon nitride or silicon oxynitride (SiOxNy). A display device with such diffusion barrier layer can be based on a substrate chosen from the group of glass, metal, polymer or paper.
- Accordingly a method for manufacturing such a diffusion barrier system in a single process chamber of a plasma deposition system will have the steps of introducing a substrate to be treated in said process chamber, discretely varying in a controlled manner during deposition at least one of the process parameters in the process chamber gas flow, power, pressure, temperature without completely interrupting such process parameter, such that each variation results in a layer with different properties. Finally the substrate is removed from said process chamber.
- In order to achieve a highly efficient diffusion barrier on both sides of a polymer substrate, the following process parameters have been chosen on a Unaxis KAI PECVD system for a stack of four layers of silicon nitride on each side of the substrate:
-
TABLE 1 Temp. Standard Standard Standard Standard Pressure RF Power Step time Thickness Deposition [° C.] flow [sccm] flow [sccm] flow [sccm] flow [sccm] [mbar] [kW] [min] [nm] rate [Å/s] T SiH4 NH3 N2 H2 p P t D D/t 175 80 600 500 750 0.7 700 2.35 100 6.45 175 80 600 500 500 0.7 650 2.46 100 6.01 175 80 600 500 750 0.7 700 2.35 100 6.45 175 80 600 500 500 0.7 650 2.46 100 6.01 - For comparison, a single layer of silicon nitride with the same overall thickness, has also been deposited on both sides of a substrate with the following parameters:
-
TABLE 2 Temp. Standard Standard Standard Standard Pressure RF Power Step time Thickness Deposition [° C.] flow [sccm] flow [sccm] flow [sccm] flow [sccm] [mbar] [kW] [min] [nm] rate [Å/s] T SiH4 NH3 N2 H2 p P t D D/t 175 80 600 500 750 0.7 700 10.2 400 6.45 - While a glass substrate (used as a reference in the so called “Ca test”, see below) exhibited a water vapor transition rate (WVTR) of 3.1×10−5, the multilayer silicon nitride stack according to Table 1 showed a WVTR of 1.5×10−4, and the single layer stack according to Table 2 showed a WVTR of 6.84×10−3 g/m2/day at 20° C. and at 50% humidity.
- The “Ca test” is a permeation test, which is based on the corrosion of reactive metal films. This all-optical method is used to quantify the water transmission rate of substrates provided with high performance diffusion barriers and is known to those skilled in the art. A glass plate with a Calcium coating is glued to the test substrate (such as polymeric substrates with or without diffusion barrier layer and possibly also a reference glass substrate). Calcium readily reacts with water and oxygen entering the test substrate and becomes progressively transparent. This leads to a change in the optical transmission of Ca coating, which can be monitored in time. The change in the transmission of the cells is then used to quantify effective permeation rates (WVTR). However, with this method, the change in the WVTR is also due to the penetration of water through the “glue” material. That is why a reference glass substrate; which normally has a WVTR of ˜1×10−6 is also tested. Here the test glass showed a WVTR of ˜3×10−5 and relative to the reference, the WVTR of the polymeric substrate/barrier layer system is measured to 1.5×10−4.
- In order to achieve a highly efficient encapsulation layer, the parameters in Table 3 have been used. Note that the deposition temperatures have been substantially reduced as not to damage the organic structures to be encapsulated.
-
TABLE 3 Temp. Standard Standard Standard Standard Pressure RF Power Step time Thickness Deposition [° C.] flow [sccm] flow [sccm] flow [sccm] flow [sccm] [mb] [kW] [min] [mn] rate [Å/s] T SiH4 NH3 N2 H2 p P t D D/t 120 80 600 500 750 0.7 700 2.35 100 6.45 120 80 600 500 500 0.7 650 2.46 100 6.01 120 80 600 500 750 0.7 700 2.35 100 6.45 120 80 600 500 500 0.7 650 2.46 100 6.01 - The multilayer silicon nitride stack deposited at 120° C. showed a WVTR of 5.66×10−4. By adjusting the process parameters, one can further reduce the permeation rates to the same level or even lower than the values for 175° C. process without loss of functionality. In a third example, the deposition temperature has further been lowered to 80° C. with promising results.
- In a fourth example, silicon nitride (SiNx) and silicon oxynitride (SiOxNy) layers are deposited alternatingly on top of each other.
- The preferred number n of inorganic layers according to the invention is at least 2, with a preferred range of 2-10. Even more layers may be useful, and can be adjusted according to specific requirements. The thickness of each layer can vary between 15-100 nm (the upper limit can be adjusted according to specific requirements). The values for x in SiNx range between 0 and 4/3.
- By carefully designing a single run step PECVD deposition process (single loading/unloading step and thus a single deposition run step), a simple, economic and very effective encapsulation layer and an environmental barrier has been found. Average water permeation values of 1.5×10−4, and peak values as low as 9×10−5 gr/m2/day were thus achieved.
- The barrier layers were prepared with different polymeric substrate pre-treatment, such as cleaning in an ultrasonic bath in order to reduce the particle concentration prior to the deposition, since cracks and micro-cracks initiate at microscopic defect sites, thereby, reducing the permeation rate and the mechanical stability.
- The layers according to the invention are transparent in the visible range, which is a requirement for most structures of optoelectronic devices.
- Silicon nitride multilayer barriers are excellent, both from the mechanical and from the processing standpoint. They are able to resist cracking during OLED processing and possess excellent foldability. The crack resistance of the layers is decisive, since mechanical failure of the diffusion barriers will directly result in a shortened lifetime of the device. The failure onset of the layers according to the invention is equal to approx. 1.5% strain, which enables a minimum achievable curvature radius of approximately 3-4 mm for a 100 μm thick substrate. Adhesion of the layers to both glass and to polymeric substrates is found to be very high. The analysis prove a very high tensile strength (2.5 GPa) and very high interfacial shear strength (230 MPa) for the layers on polymer, indicating that a strong interface is created during plasma deposition of the nitrides. The tensile failure of the SiNx is coupled to that of the underlying hard coat. Furthermore, the cohesion and adhesion of SiNx on polymeric substrate with and without hard coat layer before and after hydrothermal loading (1 h in water at RT) are found to be essentially unchanged.
- The multiple layers deposited by PECVD achieve excellent step coverage for the covering of all patterned structures of the OLED stack, and the layers retain high barrier properties.
FIG. 4 illustrates in a scanning electron micrograph the excellent step coverage of an inorganic layer according to the invention. Using a PECVD single run multi layer process, complex structures are covered perfectly. - The production of multilayer inorganic barrier is reproducible, and provides high throughput and low risk for contamination due to the single step process. The multilayer provides no mechanical miss-match and is chemically and mechanically stable.
- Since the inorganic layers according to the present invention are generally chemically very stable (unlike the inorganic/organic stacks in prior art), excellent etching resistance is achieved. The chemical compatibility of the prior art diffusion barriers with the OLED processing is a matter of concern. Alumina of prior art is not resistant against common etching solutions and the adhesion between the organic and inorganic layer fails easily for instance after processing steps (e.g. etching) and after mechanical and thermal cycling. Due to the inherent stack instability, mechanical failure of such stacks is inevitable.
- In general, the properties of multilayer inorganic diffusion barrier produced utilizing vacuum deposition technologies are far superior to what can be achieved by multiple layers of organic/inorganic foils & stacks as described in prior art.
Claims (3)
1. Method for manufacturing a diffusion barrier or encapsulation layer system comprising layers of dielectric material, in a single process chamber of a plasma deposition system with the following steps:
(1) Introducing a substrate to be treated in said process chamber
(2) Discretely varying in a controlled manner during deposition at least one of the process parameters in the process chamber gas flow, power, pressure, temperature without completely interrupting such process parameter, such that each variation results in a layer with different properties
(3) unloading said substrate from said process chamber.
2. Method according to claim 1 , wherein the temperature is kept at a value between 80° C. and 175° C.
3. Method according to claim 1 , wherein as a result of varying the at least one of the process parameters in step (2) above, a diffusion barrier or encapsulation layer system is deposited over said substrate, said layer system comprising a plurality of dielectric material layers, with at least two adjacent layers of that layer system comprising the same material, said dielectric material being one of a nitride, oxide, carbide and oxynitride and combinations thereof of a metal or a semiconductor, wherein said layer system comprises at least four layers exhibiting a water vapor transition rate of or less than 5.66×10−4 g/m2/day at 20° C. and 50% humidity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/330,903 US20090087998A1 (en) | 2004-02-20 | 2008-12-09 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54627404P | 2004-02-20 | 2004-02-20 | |
US11/061,143 US7492091B2 (en) | 2004-02-20 | 2005-02-18 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
US12/330,903 US20090087998A1 (en) | 2004-02-20 | 2008-12-09 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/061,143 Division US7492091B2 (en) | 2004-02-20 | 2005-02-18 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090087998A1 true US20090087998A1 (en) | 2009-04-02 |
Family
ID=34886254
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/061,143 Expired - Fee Related US7492091B2 (en) | 2004-02-20 | 2005-02-18 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
US12/330,903 Abandoned US20090087998A1 (en) | 2004-02-20 | 2008-12-09 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/061,143 Expired - Fee Related US7492091B2 (en) | 2004-02-20 | 2005-02-18 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
Country Status (6)
Country | Link |
---|---|
US (2) | US7492091B2 (en) |
EP (1) | EP1719192A2 (en) |
JP (1) | JP2007526601A (en) |
CN (1) | CN1977404B (en) |
TW (1) | TWI384583B (en) |
WO (1) | WO2005081333A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013036078A (en) * | 2011-08-05 | 2013-02-21 | Ulvac Japan Ltd | Film deposition method |
US9761830B1 (en) * | 2012-05-14 | 2017-09-12 | Eclipse Energy Systems, Inc. | Environmental protection film for thin film devices |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1792726A4 (en) * | 2004-09-21 | 2008-12-31 | Konica Minolta Holdings Inc | Transparent gas barrier film |
US7868903B2 (en) * | 2004-10-14 | 2011-01-11 | Daktronics, Inc. | Flexible pixel element fabrication and sealing method |
US8344410B2 (en) | 2004-10-14 | 2013-01-01 | Daktronics, Inc. | Flexible pixel element and signal distribution means |
US7893948B1 (en) | 2004-10-14 | 2011-02-22 | Daktronics, Inc. | Flexible pixel hardware and method |
US20100255263A1 (en) * | 2006-08-29 | 2010-10-07 | Pioneer Corporation | Gas barrier film and process for preparation of the same |
JP5253838B2 (en) * | 2007-02-23 | 2013-07-31 | 三井化学東セロ株式会社 | Thin film manufacturing method |
JP5164465B2 (en) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | Resin substrate |
JP5164464B2 (en) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | Resin substrate |
KR101312568B1 (en) * | 2009-06-29 | 2013-09-30 | 샤프 가부시키가이샤 | Sealing film for organic el element, organic el element, and organic el display |
WO2011006018A2 (en) | 2009-07-08 | 2011-01-13 | Plasmasi, Inc. | Apparatus and method for plasma processing |
FR2949776B1 (en) | 2009-09-10 | 2013-05-17 | Saint Gobain Performance Plast | LAYERED ELEMENT FOR ENCAPSULATING A SENSITIVE ELEMENT |
FR2949775B1 (en) | 2009-09-10 | 2013-08-09 | Saint Gobain Performance Plast | PROTECTIVE SUBSTRATE FOR COLOR DEVICE OR RADIATION TRANSMITTER |
US8765232B2 (en) | 2011-01-10 | 2014-07-01 | Plasmasi, Inc. | Apparatus and method for dielectric deposition |
KR101761834B1 (en) * | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | Wafer level led package and method of fabricating the same |
EP2693509A4 (en) * | 2011-03-30 | 2015-03-25 | Oceans King Lighting Science | Substrate, manufacturing method thereof, and organo-electroluminescent device using the same |
FR2973939A1 (en) * | 2011-04-08 | 2012-10-12 | Saint Gobain | LAYERED ELEMENT FOR ENCAPSULATING A SENSITIVE ELEMENT |
TWI450650B (en) | 2011-05-16 | 2014-08-21 | Ind Tech Res Inst | Flexible base and flexible electronic device |
CN102842683A (en) * | 2011-06-21 | 2012-12-26 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
TWI447955B (en) | 2011-11-23 | 2014-08-01 | Ind Tech Res Inst | Light-emitting diode element, manufacturing method of light guide structure thereof and equipment of forming the same |
US9299956B2 (en) | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
US10526708B2 (en) | 2012-06-19 | 2020-01-07 | Aixtron Se | Methods for forming thin protective and optical layers on substrates |
TWI477642B (en) * | 2012-07-25 | 2015-03-21 | E Ink Holdings Inc | Gas barrier substrate |
WO2014105734A1 (en) * | 2012-12-31 | 2014-07-03 | Saint-Gobain Performance Plastics Corporation | Thin film silicon nitride barrier layers on flexible substrate |
JP2016523442A (en) * | 2013-06-29 | 2016-08-08 | アイクストロン、エスイー | High performance coating deposition method and encapsulated electronic device |
TWI514563B (en) * | 2013-09-09 | 2015-12-21 | Innolux Corp | Electronic device and manufacturing method of flexible substrate |
CN104425735A (en) * | 2013-09-09 | 2015-03-18 | 群创光电股份有限公司 | Electronic device |
TWM512870U (en) | 2014-07-11 | 2015-11-21 | Ind Tech Res Inst | Substrate structure and electric device employing the same |
CN105449123B (en) * | 2015-11-18 | 2018-03-06 | 上海大学 | The preparation method of water oxygen barrier layer |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110544A (en) * | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6458512B1 (en) * | 1998-10-13 | 2002-10-01 | 3M Innovative Properties Company | Oxynitride encapsulated electroluminescent phosphor particles |
US6573652B1 (en) * | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
US6576351B2 (en) * | 2001-02-16 | 2003-06-10 | Universal Display Corporation | Barrier region for optoelectronic devices |
US20030129298A1 (en) * | 2000-03-31 | 2003-07-10 | Ryonosuke Tera | Method for manufacturing organic EL device with protective layer |
US20030127651A1 (en) * | 2001-12-27 | 2003-07-10 | Satoshi Murakami | Light emitting device and method of manufacturing the same |
US6597111B2 (en) * | 2001-11-27 | 2003-07-22 | Universal Display Corporation | Protected organic optoelectronic devices |
US20030183830A1 (en) * | 2002-01-24 | 2003-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
US20030193286A1 (en) * | 2002-04-15 | 2003-10-16 | Clemens Ottermann | Hermetic encapsulation of organic, electro-optical elements |
US6638645B2 (en) * | 2001-03-05 | 2003-10-28 | Hitachi, Ltd. | Film for organic EL device and an organic EL device using the film |
US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100483782C (en) * | 2001-12-13 | 2009-04-29 | 皇家飞利浦电子股份有限公司 | Sealing structure for display devices |
JP2003297556A (en) * | 2002-04-02 | 2003-10-17 | Dainippon Printing Co Ltd | Display element substrate, display panel, display device and manufacturing method of display element substrate |
-
2005
- 2005-02-16 WO PCT/CH2005/000088 patent/WO2005081333A2/en not_active Application Discontinuation
- 2005-02-16 EP EP05706511A patent/EP1719192A2/en not_active Withdrawn
- 2005-02-16 CN CN2005800052876A patent/CN1977404B/en not_active Expired - Fee Related
- 2005-02-16 JP JP2006553410A patent/JP2007526601A/en active Pending
- 2005-02-18 TW TW094104751A patent/TWI384583B/en not_active IP Right Cessation
- 2005-02-18 US US11/061,143 patent/US7492091B2/en not_active Expired - Fee Related
-
2008
- 2008-12-09 US US12/330,903 patent/US20090087998A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110544A (en) * | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
US6458512B1 (en) * | 1998-10-13 | 2002-10-01 | 3M Innovative Properties Company | Oxynitride encapsulated electroluminescent phosphor particles |
US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6522067B1 (en) * | 1998-12-16 | 2003-02-18 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6573652B1 (en) * | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
US20030104753A1 (en) * | 1999-10-25 | 2003-06-05 | Graff Gordon Lee | Method of making encapsulated display devices |
US20030129298A1 (en) * | 2000-03-31 | 2003-07-10 | Ryonosuke Tera | Method for manufacturing organic EL device with protective layer |
US6576351B2 (en) * | 2001-02-16 | 2003-06-10 | Universal Display Corporation | Barrier region for optoelectronic devices |
US6638645B2 (en) * | 2001-03-05 | 2003-10-28 | Hitachi, Ltd. | Film for organic EL device and an organic EL device using the film |
US6597111B2 (en) * | 2001-11-27 | 2003-07-22 | Universal Display Corporation | Protected organic optoelectronic devices |
US20030127651A1 (en) * | 2001-12-27 | 2003-07-10 | Satoshi Murakami | Light emitting device and method of manufacturing the same |
US20030183830A1 (en) * | 2002-01-24 | 2003-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
US20030193286A1 (en) * | 2002-04-15 | 2003-10-16 | Clemens Ottermann | Hermetic encapsulation of organic, electro-optical elements |
US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013036078A (en) * | 2011-08-05 | 2013-02-21 | Ulvac Japan Ltd | Film deposition method |
US9761830B1 (en) * | 2012-05-14 | 2017-09-12 | Eclipse Energy Systems, Inc. | Environmental protection film for thin film devices |
Also Published As
Publication number | Publication date |
---|---|
JP2007526601A (en) | 2007-09-13 |
WO2005081333A3 (en) | 2006-01-05 |
TW200532846A (en) | 2005-10-01 |
US20050194898A1 (en) | 2005-09-08 |
WO2005081333A2 (en) | 2005-09-01 |
CN1977404B (en) | 2010-05-12 |
US7492091B2 (en) | 2009-02-17 |
CN1977404A (en) | 2007-06-06 |
EP1719192A2 (en) | 2006-11-08 |
TWI384583B (en) | 2013-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7492091B2 (en) | Diffusion barrier layer and method for manufacturing a diffusion barrier layer | |
Wu et al. | Efficient multi-barrier thin film encapsulation of OLED using alternating Al 2 O 3 and polymer layers | |
EP1629543B1 (en) | Barrier films for flexible polymer substrates fabricated by atomic layer deposition | |
US7279239B2 (en) | Laminating product including adhesion layer and laminate product including protective film | |
US8987758B2 (en) | Barrier film composite and display apparatus including the barrier film composite | |
JP5431967B2 (en) | Moisture barrier coating for organic light emitting diode devices | |
KR101219415B1 (en) | Gas barrier thin film and organic device using the same | |
TWI453970B (en) | Barrier film composite and display apparatus including the barrier film composite | |
CN101228217A (en) | Moisture barrier coatings | |
JP2009541939A (en) | Moisture-proof coating for organic light-emitting diode devices | |
US20070248808A1 (en) | Passivation film for electronic device and method of manufacturing the same | |
CN110571347B (en) | Display panel and preparation method thereof | |
US20090305062A1 (en) | Method for fabricating multilayered encapsulation thin film having optical functionality and mutilayered encapsulation thin film fabricated by the same | |
CN100568580C (en) | Panel display apparatus and manufacture method thereof | |
US20100279092A1 (en) | Multiple-layer film and method for manufacturnig the same | |
US20190198807A1 (en) | Barrier film and barrier structure including the same | |
KR102236190B1 (en) | Thin film encapsulation for organic photonic and electronic devices and method for fabricating the same | |
WO2017090609A1 (en) | Gas barrier film and electronic device | |
KR101942749B1 (en) | multi-layer inorganic thin film for encapsulation and method for manufacturing the same | |
Akedo et al. | Flexible OLEDs for automobiles using SiNX/CNX: H multi-layer barrier films and epoxy substrates | |
KR102159993B1 (en) | Thin film encapsulation for organic photonic and electronic devices and method for fabricating the same | |
CN114068837A (en) | Thin film packaging structure, preparation method thereof, light-emitting device and display device | |
WO2009098241A1 (en) | Encapsulation of optoelectronic devices | |
Park et al. | Ultra thin film encapsulation of OLED on plastic substrate | |
TW201032337A (en) | Protection of optoelectronic devices and method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: OERLIKON SOLAR AG, TRUBBACH, SWITZERLAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OC OERLIKON BALZERS AG;REEL/FRAME:025459/0849 Effective date: 20101203 |
|
AS | Assignment |
Owner name: TEL SOLAR AG, SWITZERLAND Free format text: CHANGE OF NAME;ASSIGNOR:OERLIKON SOLAR AG, TRUBBACH;REEL/FRAME:031029/0927 Effective date: 20121207 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |