US20080318432A1 - Reactor with heated and textured electrodes and surfaces - Google Patents
Reactor with heated and textured electrodes and surfaces Download PDFInfo
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- US20080318432A1 US20080318432A1 US12/203,022 US20302208A US2008318432A1 US 20080318432 A1 US20080318432 A1 US 20080318432A1 US 20302208 A US20302208 A US 20302208A US 2008318432 A1 US2008318432 A1 US 2008318432A1
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- reactor
- upper electrode
- electrode
- platinum
- heater
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- 239000000463 material Substances 0.000 claims abstract description 36
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 229910052697 platinum Inorganic materials 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 12
- 239000002318 adhesion promoter Substances 0.000 claims description 8
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 241000237503 Pectinidae Species 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 235000020637 scallop Nutrition 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- YKIOKAURTKXMSB-UHFFFAOYSA-N adams's catalyst Chemical compound O=[Pt]=O YKIOKAURTKXMSB-UHFFFAOYSA-N 0.000 claims 4
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 claims 4
- 241000309110 Euvola vogdesi Species 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000006227 byproduct Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000001464 adherent effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 PtClx) Chemical class 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- the present invention is directed to reactors and in particular reactors for processing objects with films such as semiconductor wafers.
- reactors which can accomplish various steps associated with the definition of the functionality of the semiconductor chip.
- Such reactors can, for example, perform deposition and etching processes through the use of various gases which are part of the fabrication process.
- gases which are part of the fabrication process.
- gaseous input materials as well as materials from the substrate being etched and combinations thereof can be deposited on the internal surface present in the reactor itself.
- Such surfaces include reactor walls, reactor electrodes, the reactor chuck and the like.
- Each processing tool depending on the processing run, will have a regular scheduled down period during which the internal surfaces of the reactor will be cleaned and parts such as electrodes will be repaired and/or replaced.
- the deposits which form on the various surfaces found in the reactor are known to have a detrimental effect to the fabrication of the semiconductor wafer product in the reactor.
- deposits and layers on surfaces of the reactor can be thick and have poor reactor surface adhesion qualities.
- the deposits or layers may not be very durable. All this potentially leads to the flaking or spaulding off of portions of the deposits or layers from the surfaces of the reactor.
- flaking or spaulding can interfere with the uniform processing of the surface of the wafer.
- materials which flake or spauld from the surface of a reactor can redeposit on the surface of the wafer being processed, potentially damaging the functionality being fabricated on the wafer.
- the present invention is directed to overcoming the problems associated with prior reactors.
- the present invention includes apparatus and method for ensuring that any materials that are deposited on the internal surfaces of the reactor are thin and more durable than those deposited by prior art reactors and that such deposits adhere more readily to the internal surfaces of the reactor.
- embodiments of the present invention can be used in the construction and fabrication of semiconductor chips as well as in the construction and fabrication of any other product.
- Such other products can include thin film read/write heads for a disk drive which requires the fabrication of circuitry on a substrate or which requires the fabrication of layers.
- any construct having layers with features of submicron dimensions can benefit from the present invention.
- a further object of the present invention is to provide one or more electrodes, in particular the top electrode, of a reactor with a heater in order to ensure that the deposits and materials on the electrode adhere well to the electrode.
- Still a further object of the invention is to provide the reactor with a reactor chamber and surfaces which are textured in order to encourage adherence of materials deposited thereon so that such materials do not flake or spauld off, interfering with the processing of a wafer.
- FIG. 1 is a schematical plan sectional view of an electrode with heaters.
- FIG. 2 is a cross sectional view of the electrode of FIG. 1 .
- FIGS. 3 a , 3 b , and 3 c are cross-sections of textured surfaces of embodiments of the invention.
- FIG. 4 is a cross-section of another textured surface of an embodiment of the invention.
- FIG. 5 is a cross-section of still a further textured surface of an embodiment of the invention.
- FIG. 6 is a graph depicting a reduction in deposit thickness and halogen content as the electrode temperature is increased.
- FIG. 7 is a side sectional view of a reactor surface which has been precoated.
- FIG. 8 is a side view of a reactor with a shield protecting a reactor surface such as an electrode.
- FIGS. 1 and 2 depict plan and cross-sectional views of an upper electrode 20 for a reactor, and in particular of an etch reactor.
- the upper electrode has bores 22 provided therein which can receive heating elements 24 .
- two of the heating elements 24 are preferably cartridge heaters with an internal thermocouple.
- the third element 26 is a cartridge heater used as a thermocouple in order to sense the temperature.
- the cartridge heaters 24 and the cartridge heater 26 using a thermocouple are connected to a controller box 28 which uses the sensed temperature to maintain the level of heat generated by the cartridge heaters and thus the temperature of the upper electrode.
- the heaters are resistive type heaters. It is to be understood that other heaters can be employed and be within the spirit and scope of the invention. It is to be understood that the same technique can be used to heat electrode shields, and other surfaces and walls of the reactor.
- the upper electrode (and/or the electrode opposite to the electrode or chuck holding a wafer to be processed) is preferably heated to a maximum temperature of about 300 to about 350 degrees C.
- the maximum temperature is preferably about 400 to about 500 degrees C.
- the upper electrode would be floating at a maximum temperature of about 100 degrees C.
- reaction gases, materials from the wafer and combination thereof can be deposited on the various internal surface of the reactor and chamber, such as for example, the electrode.
- the deposits are thinner, more adherent and more durable than is experienced when such reaction materials are deposited on non-heated surfaces.
- the deposited layer on the electrode and other surfaces is more likely to be mostly platinum and not combinations of platinum with other gases such as chlorine and oxygen.
- Such other gases de-absorb or boil off from the surfaces in order to leave a more thin, durable and adhesive platinum layer.
- This layer accordingly sticks better to the surface of the electrode and does not easily flake or spauld off. Accordingly, there is less of a likelihood that any materials deposited on the electrode will flake off from the electrode and ruin the substrate being processed.
- the graph of FIG. 6 demonstrates that as the temperature of the surface is increased, the deposit thickness greatly decreases along with the content of halogens (for halogen gas system) in the deposited material. With a decrease in halogen compounds (such as PtCl x ), the deposited materials are thinner and more adherent and tend toward a simple material such as platinum.
- halogens for halogen gas system
- non-volatile material such as, by way of example only, platinum (Pt), Iridium (Ir), barium strontium titanate (BST), lead zirconium titanate (PZT), bismuth strontium tantalate (SBT), Iridium Oxide (IrO 2 ), Titanium Nitride (TiN), and other non-volatile materials.
- the upper electrode and for that matter, other surfaces that are inside of the reaction chamber can be textured such that layers that are deposited thereon have less likelihood of flaking or spaulding off, potentially contaminating the reaction.
- Such structures are particularly useful for etching non-volatile materials as described hereinabove.
- Such surface texturing promotes adhering of the deposits to the surface. Texturing can be as effective with capacitively coupled reactors. Further, inductively coupled reactors can also benefit from a texturing technique.
- FIGS. 3 , 4 , and 5 demonstrate several different representative embodiments for texturing.
- the first embodiments show surfaces 30 , 32 , 34 which are scalloped.
- the scallops presented are convex in shape toward the reactor chamber. Alternating the scallops can be concave toward the reactor chamber much as presented in FIG. 5 .
- Such surface can be provided on the electrodes, shields for the electrode, and also on the various surfaces found inside of a reactor chamber.
- FIGS. 4 and 5 include texturing which have a series of peaks 40 , 50 .
- the effect of this texturing in some instances can be measured by the aspect ratio of the width between peaks to the depth of the valley between the peaks.
- the aspect ratio would be:
- a textured surface With a relatively low aspect ratio, in other words, with the width much less than the depth, it can be expected that such a textured surface would be better able to capture any deposited material than a texture where the width between peaks is much greater than the depth. Additionally, a textured surface also increases the surface area upon which materials can be deposited and collected.
- This embodiment with the textured surfaces as well as the embodiment with the heated electrode as indicated above prevent flaking, spaulding, delaminating, cracking and the accumulation of dust, all of which can interfere with the wafer fabrication process.
- FIG. 7 Another embodiment ( FIG. 7 ) of the invention for use especially with such non-volatile films includes the pre-coating of the various surfaces 55 of the reaction chamber in order to promote chemical adhesion.
- Such pre-coating 60 can be done with Titanium (Ti) or Titanium Nitride (TiN).
- Ti Titanium
- TiN Titanium Nitride
- the surface found in the reactor chamber can be pre-coated with materials which are the same as or compatible with the non-volatile films which are being etched.
- Such materials can also include Platinum (Pt), Iridium (Ir), Iridium Oxide (IrO 2 ), Barium Strontium Titanate (BST), Strontium Bismuth Tantalate (SBT), Strontium Titanate (STO), Ruthenium (Ru), Ruthenium Oxide (RuO 2 ), and Lead Zirconium Titanate (PZT).
- Platinum Pt
- Iridium Ir
- Iridium Oxide IrO 2
- BST Barium Strontium Titanate
- SBT Strontium Bismuth Tantalate
- STO Strontium Titanate
- Ru Ruthenium
- RuO 2 Ruthenium Oxide
- PZT Lead Zirconium Titanate
- the sidewalls of the reactor and in particular the sidewalls of the reactor liners can be provided with a matt finish which also promotes good chemical adhesion.
- a matt finish is defined as follows: General texturing of a surface to facilitate the adhesion of various materials. The matting is constructed in such a way as to maximize the surface area penetrated while minimizing spaulding of the deposited film.
- coating or pre-conditioning internal surfaces of the reactor chamber can prevent spaulding, flaking, and delaminating of any materials deposited on the surfaces, beneficially effecting the processing of semiconducting wafers or other substrates
- FIG. 8 shows a shield 70 which has been located adjacent to an upper electrode 80 .
- the shield can either be heated, textured, or pre-coated, or a combination of the above and be within the spirit and scope of the invention. Texturing can include grooves, channels, perforations and/or screened surfaces.
- the present invention advantageously uses heated and/or textured and/or pre-coated surfaces that are internal to a reactor chamber in order to ensure that materials deposited thereon adhere and do not flake, spauld or become delaminated, contaminating the process.
- Other advantageous, objects and aspects of the invention can be obtained from a review of the figures and the claims.
Abstract
Description
- This application is a continuation of U.S. patent application Ser. No. 09/888,365, entitled “Reactor with Heated and Textured Electrodes and Surfaces,” by Stephen P. DeOrnellas, et al., filed Jun. 22, 2001 (Attorney Docket No. TEGL-01092US1), which is a continuation of U.S. patent application Ser. No. 09/453,842, entitled “Improved Reactor with Heated and Textured Electrodes and Surfaces,” by Stephen P. DeOrnellas, et al., filed Dec. 2, 1999, now abandoned. All of the above applications and patents are incorporated herein by reference.
- The present invention is directed to reactors and in particular reactors for processing objects with films such as semiconductor wafers.
- During fabrication of semiconductor chips, wafers are processed in reactors which can accomplish various steps associated with the definition of the functionality of the semiconductor chip. Such reactors can, for example, perform deposition and etching processes through the use of various gases which are part of the fabrication process. During the etch process, by way of example, gaseous input materials as well as materials from the substrate being etched and combinations thereof can be deposited on the internal surface present in the reactor itself. Such surfaces include reactor walls, reactor electrodes, the reactor chuck and the like. Each processing tool, depending on the processing run, will have a regular scheduled down period during which the internal surfaces of the reactor will be cleaned and parts such as electrodes will be repaired and/or replaced.
- The deposits which form on the various surfaces found in the reactor are known to have a detrimental effect to the fabrication of the semiconductor wafer product in the reactor. By way of example only, such deposits and layers on surfaces of the reactor can be thick and have poor reactor surface adhesion qualities. Additionally, the deposits or layers may not be very durable. All this potentially leads to the flaking or spaulding off of portions of the deposits or layers from the surfaces of the reactor. Such flaking or spaulding can interfere with the uniform processing of the surface of the wafer. For example, materials which flake or spauld from the surface of a reactor can redeposit on the surface of the wafer being processed, potentially damaging the functionality being fabricated on the wafer.
- The present invention is directed to overcoming the problems associated with prior reactors. The present invention includes apparatus and method for ensuring that any materials that are deposited on the internal surfaces of the reactor are thin and more durable than those deposited by prior art reactors and that such deposits adhere more readily to the internal surfaces of the reactor.
- Accordingly, it is an object of the invention to provide an apparatus and method which ensures that any layers or deposits on the internal surfaces of the reactor are thin, durable and adhere well to the surface of the reactor so that the deposits do not flake or spauld, potentially interfering with the process of defining the various layers which are being fabricated on a wafer.
- It is to be understood that embodiments of the present invention can be used in the construction and fabrication of semiconductor chips as well as in the construction and fabrication of any other product. Such other products can include thin film read/write heads for a disk drive which requires the fabrication of circuitry on a substrate or which requires the fabrication of layers. Generally any construct having layers with features of submicron dimensions can benefit from the present invention.
- Accordingly, it is another object of the present invention to provide reactor when the various surfaces of the reactor are heated to a temperature above that which would normally occur in the reactor in order to ensure that any materials deposited on the surface adhere well to the surface.
- A further object of the present invention is to provide one or more electrodes, in particular the top electrode, of a reactor with a heater in order to ensure that the deposits and materials on the electrode adhere well to the electrode.
- Still a further object of the invention is to provide the reactor with a reactor chamber and surfaces which are textured in order to encourage adherence of materials deposited thereon so that such materials do not flake or spauld off, interfering with the processing of a wafer.
- In particular, it is an object of the present invention to provide an electrode and principally a top electrode of such a reactor with a textured surface in order to ensure that any material deposited thereon adheres to the reactor.
- It is a further object of the present invention to provide a deposition shield which can be at least one of heated and/or textured in order to ensure that any materials deposited thereon adhere to the surface and do not flake or spauld off, potentially interfering with the processing of the substrate.
- It is yet a further aspect of the present invention to coat the internal surfaces of the reactor with adhesion promoters which encourage the development of durable deposits which are less likely to flake or spauld and thus interfere with the processing of the work piece.
- Further aspects and objects of the invention can be obtained from a review of the detailed description of the invention, the figures and the claims.
-
FIG. 1 is a schematical plan sectional view of an electrode with heaters. -
FIG. 2 is a cross sectional view of the electrode ofFIG. 1 . -
FIGS. 3 a, 3 b, and 3 c, are cross-sections of textured surfaces of embodiments of the invention. -
FIG. 4 is a cross-section of another textured surface of an embodiment of the invention. -
FIG. 5 is a cross-section of still a further textured surface of an embodiment of the invention. -
FIG. 6 is a graph depicting a reduction in deposit thickness and halogen content as the electrode temperature is increased. -
FIG. 7 is a side sectional view of a reactor surface which has been precoated. -
FIG. 8 is a side view of a reactor with a shield protecting a reactor surface such as an electrode. - Reactor embodiment of the present invention can include heated electrode, deposition shield and/or other surfaces. By way of example only,
FIGS. 1 and 2 depict plan and cross-sectional views of anupper electrode 20 for a reactor, and in particular of an etch reactor. The upper electrode hasbores 22 provided therein which can receiveheating elements 24. In this particular embodiment, two of theheating elements 24 are preferably cartridge heaters with an internal thermocouple. Thethird element 26 is a cartridge heater used as a thermocouple in order to sense the temperature. Thecartridge heaters 24 and thecartridge heater 26 using a thermocouple are connected to acontroller box 28 which uses the sensed temperature to maintain the level of heat generated by the cartridge heaters and thus the temperature of the upper electrode. In this preferred embodiment, the heaters are resistive type heaters. It is to be understood that other heaters can be employed and be within the spirit and scope of the invention. It is to be understood that the same technique can be used to heat electrode shields, and other surfaces and walls of the reactor. - In a preferred embodiment, where the electrode is made out of aluminum, the upper electrode (and/or the electrode opposite to the electrode or chuck holding a wafer to be processed) is preferably heated to a maximum temperature of about 300 to about 350 degrees C. With the upper electrode made of graphite or silicon, the maximum temperature is preferably about 400 to about 500 degrees C.
- Without being so heated, in a typical etch reactor, the upper electrode would be floating at a maximum temperature of about 100 degrees C.
- In a typical reactor, during the processing of a substrate such as a semiconductor wafer, reaction gases, materials from the wafer and combination thereof can be deposited on the various internal surface of the reactor and chamber, such as for example, the electrode. With the heated electrode of the above embodiment, the deposits are thinner, more adherent and more durable than is experienced when such reaction materials are deposited on non-heated surfaces. More particularly, when reactors and in particular etch reactor process substrate with platinum, the deposited layer on the electrode and other surfaces is more likely to be mostly platinum and not combinations of platinum with other gases such as chlorine and oxygen. Such other gases de-absorb or boil off from the surfaces in order to leave a more thin, durable and adhesive platinum layer. This layer accordingly sticks better to the surface of the electrode and does not easily flake or spauld off. Accordingly, there is less of a likelihood that any materials deposited on the electrode will flake off from the electrode and ruin the substrate being processed.
- It has been found that by using heated upper electrodes, that there can be a reduction of seven-fold and even greater in the deposit thickness of materials on the upper eductor. A stronger interfaced between the surface and the deposit is also experienced.
- The graph of
FIG. 6 demonstrates that as the temperature of the surface is increased, the deposit thickness greatly decreases along with the content of halogens (for halogen gas system) in the deposited material. With a decrease in halogen compounds (such as PtClx), the deposited materials are thinner and more adherent and tend toward a simple material such as platinum. - It is to be understood that although the above embodiment was discussed with respect to a heated upper electrode, that other surfaces present inside the reactor chamber can be also heated in order to accomplish the same benefit with respect to that surface. Further, it is to be understood that shields can be used to protect the electrode and other components, which shields are consumable and which shields can be heated and benefit from the present invention.
- It is also to be understood that the present invention is most useful for etching non-volatile material such as, by way of example only, platinum (Pt), Iridium (Ir), barium strontium titanate (BST), lead zirconium titanate (PZT), bismuth strontium tantalate (SBT), Iridium Oxide (IrO2), Titanium Nitride (TiN), and other non-volatile materials.
- Other heating techniques, such as through the use of lamps to heat electrode and surfaces can be employed in order to enjoy the benefit of the present invention.
- In another preferred embodiment of the invention, the upper electrode and for that matter, other surfaces that are inside of the reaction chamber, can be textured such that layers that are deposited thereon have less likelihood of flaking or spaulding off, potentially contaminating the reaction. Such structures are particularly useful for etching non-volatile materials as described hereinabove. Such surface texturing promotes adhering of the deposits to the surface. Texturing can be as effective with capacitively coupled reactors. Further, inductively coupled reactors can also benefit from a texturing technique.
- Texturing can take a variety of shapes and forms, both regular and irregular. The
FIGS. 3 , 4, and 5 demonstrate several different representative embodiments for texturing. The first embodiments (FIGS. 3 a, 3 b, and 3 c) show surfaces 30, 32, 34 which are scalloped. The scallops presented are convex in shape toward the reactor chamber. Alternating the scallops can be concave toward the reactor chamber much as presented inFIG. 5 . Such surface can be provided on the electrodes, shields for the electrode, and also on the various surfaces found inside of a reactor chamber. - Additionally, the embodiments shown in
FIGS. 4 and 5 include texturing which have a series ofpeaks -
- With a relatively low aspect ratio, in other words, with the width much less than the depth, it can be expected that such a textured surface would be better able to capture any deposited material than a texture where the width between peaks is much greater than the depth. Additionally, a textured surface also increases the surface area upon which materials can be deposited and collected.
- This embodiment with the textured surfaces as well as the embodiment with the heated electrode as indicated above prevent flaking, spaulding, delaminating, cracking and the accumulation of dust, all of which can interfere with the wafer fabrication process.
- Another embodiment (
FIG. 7 ) of the invention for use especially with such non-volatile films includes the pre-coating of thevarious surfaces 55 of the reaction chamber in order to promote chemical adhesion. Such pre-coating 60 can be done with Titanium (Ti) or Titanium Nitride (TiN). The surface found in the reactor chamber can be pre-coated with materials which are the same as or compatible with the non-volatile films which are being etched. Such materials can also include Platinum (Pt), Iridium (Ir), Iridium Oxide (IrO2), Barium Strontium Titanate (BST), Strontium Bismuth Tantalate (SBT), Strontium Titanate (STO), Ruthenium (Ru), Ruthenium Oxide (RuO2), and Lead Zirconium Titanate (PZT). - Additionally, the sidewalls of the reactor and in particular the sidewalls of the reactor liners can be provided with a matt finish which also promotes good chemical adhesion. A matt finish is defined as follows: General texturing of a surface to facilitate the adhesion of various materials. The matting is constructed in such a way as to maximize the surface area penetrated while minimizing spaulding of the deposited film.
- As with the embodiments with the heated electrode and with the textured electrode, coating or pre-conditioning internal surfaces of the reactor chamber can prevent spaulding, flaking, and delaminating of any materials deposited on the surfaces, beneficially effecting the processing of semiconducting wafers or other substrates
-
FIG. 8 shows ashield 70 which has been located adjacent to anupper electrode 80. The shield can either be heated, textured, or pre-coated, or a combination of the above and be within the spirit and scope of the invention. Texturing can include grooves, channels, perforations and/or screened surfaces. - The present invention advantageously uses heated and/or textured and/or pre-coated surfaces that are internal to a reactor chamber in order to ensure that materials deposited thereon adhere and do not flake, spauld or become delaminated, contaminating the process. Other advantageous, objects and aspects of the invention can be obtained from a review of the figures and the claims.
- It is to be understood that other embodiments of the invention can be developed and fall within the spirit and scope of the invention and claims. It is also to be understood that all the above embodiments described with respect to semiconductor processing can be utilized for other techniques and in other reactors where there is a requirement that materials deposited on non-workpiece surfaces adhere so that they do not delaminate and contaminate the process.
Claims (23)
Priority Applications (1)
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US12/203,022 US20080318432A1 (en) | 1999-12-02 | 2008-09-02 | Reactor with heated and textured electrodes and surfaces |
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US45384299A | 1999-12-02 | 1999-12-02 | |
US09/888,365 US7439188B2 (en) | 1999-12-02 | 2001-06-22 | Reactor with heated and textured electrodes and surfaces |
US12/203,022 US20080318432A1 (en) | 1999-12-02 | 2008-09-02 | Reactor with heated and textured electrodes and surfaces |
Related Parent Applications (1)
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US09/888,365 Continuation US7439188B2 (en) | 1999-12-02 | 2001-06-22 | Reactor with heated and textured electrodes and surfaces |
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US20080318432A1 true US20080318432A1 (en) | 2008-12-25 |
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US09/888,365 Expired - Fee Related US7439188B2 (en) | 1999-12-02 | 2001-06-22 | Reactor with heated and textured electrodes and surfaces |
US12/203,022 Abandoned US20080318432A1 (en) | 1999-12-02 | 2008-09-02 | Reactor with heated and textured electrodes and surfaces |
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EP (1) | EP1252359B1 (en) |
JP (1) | JP5054874B2 (en) |
AU (1) | AU1786301A (en) |
WO (1) | WO2001040540A1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
JP5054874B2 (en) | 2012-10-24 |
JP2003515960A (en) | 2003-05-07 |
US20020036064A1 (en) | 2002-03-28 |
EP1252359B1 (en) | 2020-03-11 |
EP1252359A1 (en) | 2002-10-30 |
EP1252359A4 (en) | 2011-01-26 |
AU1786301A (en) | 2001-06-12 |
US7439188B2 (en) | 2008-10-21 |
WO2001040540A1 (en) | 2001-06-07 |
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