US20060205291A1 - Methods for fabricating electronic device components that include protruding contacts and electronic device components so fabricated - Google Patents
Methods for fabricating electronic device components that include protruding contacts and electronic device components so fabricated Download PDFInfo
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- US20060205291A1 US20060205291A1 US11/429,011 US42901106A US2006205291A1 US 20060205291 A1 US20060205291 A1 US 20060205291A1 US 42901106 A US42901106 A US 42901106A US 2006205291 A1 US2006205291 A1 US 2006205291A1
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- contact
- forming
- substrate
- outer shell
- fabricating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/22—Contacts for co-operating by abutting
- H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
- H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
- H01R13/2414—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means conductive elastomers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R2201/00—Connectors or connections adapted for particular applications
- H01R2201/20—Connectors or connections adapted for particular applications for testing or measuring purposes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
A method for fabricating a semiconductor device component, such as a probe card, includes providing a support plate with at least one aperture therethrough and providing at least one contact in the at least one aperture. Ends of the at least one contact may be enlarged to retain the same within the at least one aperture. A protective structure may be provided to prevent excessive compression of the at least one contact. The support plate, all or part of the at least one contact, the protective structure, or a combination thereof may be formed by a programmed material consolidation process, such as stereolithography, in which unconsolidated material is selectively consolidated in accordance with a program.
Description
- This application is a divisional of application Ser. No. 10/788,941, filed Feb. 27, 2004, pending.
- 1. Field of the Invention
- The present invention relates to electrical contacts for use with semiconductor devices. The electrical contacts of the present invention may be used to provide temporary electrical connections as semiconductor devices are being burned in or otherwise tested. More specifically, the present invention relates to electrical contacts which include stereolithographically fabricated portions. The present invention also includes semiconductor devices, carriers, probe cards, and other substrates that employ such electrical contacts. Additionally, the present invention includes methods relating to fabrication of the electrical contacts of the present invention and structures incorporating same.
- 2. Background of Related Art
- Numerous types of electrical contacts that are configured to provide temporary communication between the bond pads or other contacts of a semiconductor device and corresponding terminals or other contacts of a test substrate, carrier substrate, or other electronic component have been developed and used in the art.
- Several examples of temporary electrical contacts have been developed by FormFactor, Inc., of Livermore, Calif., and are described in U.S. Pat. No. 5,476,211, as well as in other U.S. Patents referenced hereinbelow that have been assigned to FormFactor (hereinafter collectively “the FormFactor Patents”). Each of these temporary electrical contacts is a compressible, resilient element which is secured to a bond pad of a semiconductor device. They may include a core and an outer coating, both of which are formed from electrically conductive materials. The core may comprise a relatively soft material, or material which is subject to plastic deformation, while the outer coating may comprise a more rigid material, which imparts the electrical contact with elastic properties. Alternatively, the core may be formed from a more rigid, elastic material, while the coating is formed from a material that enhances adhesion of the electrical contact to a bond pad of a semiconductor device.
- The electrical contacts that are described in the FormFactor Patents are represented to be useful for providing temporary electrical connection between the bond pads of a semiconductor device and the contacts of a test or burn-in substrate. They may also provide permanent electrical connections between the bond pads of the semiconductor device and corresponding contacts (i.e., bond pads, terminals, leads, etc.) of another semiconductor device, a carrier, another semiconductor device component, or another electronic device.
- The FormFactor Patents teach that wire-bonding apparatus may be used to form the core of an electrical contact of the type described therein, while conventional deposition or plating methods may be used to coat each core with another layer of conductive material. As conventional wire-bonding apparatus are typically configured to form only a single conductive element (e.g., bond wire, electrical contact, or other conductive structure) at a time, and since there may be thousands of bond pads on a substrate (e.g., silicon wafer) upon which numerous semiconductor devices are carried, the electrical contact fabrication processes that are described in the FormFactor Patents may be extremely and undesirably time consuming. Furthermore if, as described in the FormFactor Patents, gold is used to form the cores of numerous electrical contacts, the cost of forming the cores may be extremely and undesirably expensive.
- The contacts described in the FormFactor Patents may be used, for example, in probe cards, which are used to establish a temporary connection between a semiconductor device and a test substrate or burn-in substrate. The contacts are positioned at locations that correspond to the locations of corresponding bond pads of the semiconductor device and terminals of the test substrate or burn-in substrate. Thus, the contacts are positioned so as to align between corresponding bond pads and terminals when the probe card is aligned between the semiconductor device and the test substrate or burn-in substrate. The compressibility of such contacts imparts the probe card with dimensional tolerance for the spacing between the semiconductor device and the test substrate or burn-in substrate.
- Whether the Form Factor contacts are used with a probe card or another type of semiconductor device component, they may be compressed or deformed beyond their elastic limits, which will render them useless.
- Accordingly, processes are needed by which electrical contacts may be more efficiently and cost-effectively fabricated, as are electrical contacts that are formed by such processes, protective structures for preventing damage to such electrical contacts, and semiconductor devices, carriers, probe cards, and other substrates with which such electrical contacts may be assembled.
- The present invention, in several embodiments, includes electrical contacts, which are also referred to herein as “contacts” for simplicity, that may be at least partially fabricated by use of stereolithographic fabrication processes, as well as semiconductor devices, carriers, probe cards, and other substrates that include such contacts.
- A contact, in an exemplary embodiment, includes a core which is stereolithographically formed or fabricated, as well as a conductive coating on at least a portion of the core. As the core is stereolithographically fabricated, it may include a single layer or multiple layers that are at least partially superimposed, contiguous, and mutually adhered to one another. The contact may be rigid or comprise a compressible, resilient member.
- In another exemplary embodiment, a contact according to the present invention includes a conductive core disposed within a stereolithographically fabricated shell. The shell, which may include a single layer or a plurality of superimposed, contiguous, mutually adhered layers, may be formed with a channel extending therethrough. The channel may then be filled with the conductive material of the core, which is exposed at both ends of the shell.
- In yet another aspect, the present invention includes methods for fabricating contacts. One exemplary embodiment of a contact fabrication method according to the present invention includes stereolithographically fabricating a core of the contact, then coating at least portions of the core with one or more layers (or sublayers) of conductive material.
- A method for fabricating a contact in accordance with teachings of the present invention may include the formation of recesses within a fabrication, or sacrificial, substrate and coating the surfaces of the fabrication substrate with one or more material layers that will facilitate the subsequent release of contacts therefrom. Cores of the contacts may then be formed at the locations of the recesses, with the configuration of the base of each contact being at least partially defined by the recess within which it is formed. Thereafter, the cores may be at least partially coated with one or more layers (or sublayers) of conductive material. Once the contacts have been fabricated, they may be released from the fabrication substrate, which may then be discarded or reused to fabricate more contacts.
- In another, similar embodiment of the method, the fabrication substrate may lack recesses.
- In another embodiment of contact fabrication method according to the present invention, the foregoing processes may be used to form contacts that incorporate teachings of the present invention directly on the contact pads of a semiconductor device, an interposer, a carrier substrate, or the like.
- Accordingly, another aspect of the present invention involves semiconductor device components that include the inventive contacts.
- In another aspect, the present invention includes probe cards, which are useful in testing and burning in semiconductor devices that include the inventive contacts. An exemplary embodiment of a probe card according to the present invention may include contact pads with one or more types of compressible, resilient electrical contacts.
- In addition, methods for fabricating probe cards are within the scope of the present invention.
- One embodiment of a method for fabricating a probe card may employ the above-described processes for forming contacts and, prior to releasing the contacts from the sacrificial substrate, fabricating a support plate around intermediate sections of the contacts. Accordingly, the base of each contact is located on one side of the support plate and the tip of each contact is located on the other side of the support plate. As such, the support plate is fabricated in such a way that the contacts become trapped thereby. Nonetheless, it may be possible for the contacts to move relative to the support plate, along their lengths and in a direction which is transverse to a plane in which the support plate is located. The resulting structure may comprise a probe card which is useful for testing semiconductor devices with bond pads that are arranged complementarily to the arrangement of contacts on the support plate, as well as with a test or burn-in substrate that includes terminals that are positioned correspondingly to the positions of contacts on the support plate.
- Alternatively, in another embodiment, a probe card may be fabricated by forming apertures through a substrate at areas where contacts are to be located. Of course, the apertures are also positioned correspondingly to the locations of corresponding terminals of a test or burn-in substrate with which the probe card is to be used, as well as to the locations of bond pads of a semiconductor device with which the probe card is to be used. Outer shells of the contacts are then formed within the apertures and in such a way as to protrude from the opposite major surfaces of the substrate. A channel may be formed through each outer shell as that outer shell is being fabricated or following fabrication of the outer shell. Conductive material, which may be introduced into the channels or maintained in position within the apertures of the substrate while at least portions of outer shells are being fabricated, extends completely through each outer shell to form a conductive core of the corresponding contact. The conductive material is exposed at each end of the contact to facilitate connection of a bond pad of a semiconductor device with a corresponding terminal of a test substrate or burn-in substrate.
- The present invention also includes protective structures that prevent damage to contacts according to the present invention. Such a protective structure may include one or more elements that are located adjacent to regions of contacts that protrude from a substrate, such as a semiconductor device, a carrier, a probe card, or another electronic component. In addition, a protective structure of the present invention is configured to prevent a contact of the present invention from being bent or otherwise deformed beyond its elastic limit (i.e., the limit from which it will not return substantially to its original configuration). Each element of the protective structure may protrude a lesser distance from the substrate than the adjacent protruding portion. Alternatively, if the protective structure is formed from a material that imparts it with some compressibility or flexibility, it may protrude substantially the same distance from the substrate as, or even a greater distance than, the adjacent protruding portion of the contact protrudes from the substrate.
- Some embodiments of protective structures according to the present invention include at least one receptacle that laterally surrounds at least a portion of at least one contact. A height of the protective structure (i.e., the distance the protective structure protrudes from the substrate), a distance walls of the receptacle are spaced apart from the contact, or some combination of these dimensions may prevent compression, flexure, or bending or other deformation of the contact beyond its elastic limit.
- Other embodiments of protective structures that incorporate teachings of the present invention include at least one element (e.g., a post) that protrudes from a substrate adjacent to a corresponding contact. The at least one protruding element has a height which will prevent compression or flexion of the contact beyond its elastic limit as that contact is biased against a corresponding bond pad, terminal, or other contact element.
- Other features and advantages of the present invention will become apparent to those of ordinary skill in the art through consideration of the ensuing description, the accompanying drawings, and the appended claims.
- In the drawings, which depict features of exemplary embodiments of various aspects of the present invention:
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FIG. 1 is a side view of an exemplary contact according to the present invention; -
FIG. 2 is a cross-section taken through the contact ofFIG. 1 ; -
FIGS. 3 through 8 are schematic representations of a process for fabricating a substrate to be used in forming contacts of the present invention and, optionally, in forming probe cards that incorporate teachings of the present invention; -
FIG. 9 is a schematic representation of an exemplary stereolithography apparatus that may be used to form various structures of the present invention, including all or part of contacts, support plates of probe cards, and protective structures of the present invention; -
FIGS. 10A through 10C schematically illustrate a stereolithographic process for fabricating at least part of a contact of the present invention; -
FIGS. 11A through 11D schematically depict use of a wire-bonding capillary to form a contact according to the present invention; -
FIGS. 12 and 12 A schematically illustrate contacts that have been coated with conductive material; -
FIGS. 13A and 13B depict the stereolithographic fabrication of a support plate of a probe card according to the present invention; -
FIG. 14 shows the support plate, contacts, and substrate being removed from a fabrication tank of a stereolithography apparatus; -
FIG. 15 schematically represents the assembly that results from fabrication of a support plate around the contacts that protrude from the substrate; -
FIG. 16 schematically illustrates removal of the contacts from the substrate on which they were fabricated; -
FIG. 17 is a partial perspective view of a semiconductor device or other semiconductor device component that includes contacts of the present invention secured to the bond pads or terminals thereof; -
FIG. 18 is a cross-sectional representation of the semiconductor device or other semiconductor device component ofFIG. 17 ; -
FIG. 19 is a schematic illustration of the manner in which a probe card may be assembled between a semiconductor device and a test or burn-in substrate; -
FIG. 20 is a partial perspective view of another exemplary embodiment of probe card that incorporates teachings of the present invention; -
FIGS. 21 through 26 are cross-sectional representations of an exemplary process for fabricating the probe card shown inFIG. 20 ; -
FIGS. 27 through 31 are schematic representations of various exemplary ends of probe card contacts according to the present invention; -
FIGS. 32 through 38 are schematic representations of another exemplary embodiment of a method for fabricating probe cards in accordance with teachings of the present invention; and -
FIGS. 39 through 41 are partial perspective views that illustrate exemplary embodiments of protective structures of the present invention, as well as the manner in which they may be positioned relative to contacts and the substrates from which contacts protrude. -
FIGS. 1 and 2 illustrate an exemplary embodiment ofcontact 10 according to the present invention. As shown, contact 10 includes abase 12, anintermediate section 14 adjacent to base 12, and atip 16, which is adjacent to and located on an end ofintermediate section 14 opposite frombase 12.Base 12 is configured to make electrical contact with a contact pad or circuit (not shown) of a semiconductor device (not shown) (e.g., a bare or packaged semiconductor die), whiletip 16 is configured to establish electrical communication with a contact pad (not shown) of another semiconductor device component (e.g., a test substrate or bum-in substrate, another semiconductor device, a carrier substrate, etc.). -
Contact 10 includes a core 18 that may be formed from a dielectric material or a conductive material. A layer of conductive material, which is also referred to herein as a “conductive coating 20,” covers at least portions of theexterior surface 19 ofcore 18 so as to facilitate the transmission of electrical signals alongcontact 10. -
Core 18 may have any suitable configuration known in the art. As such,core 18 may be rigid or flexible. By way of example only, arigid core 18 may be shaped as a point, a tip, a truncated cone or pyramid, a cup cross, or the like. Examples offlexible core 18 shapes include structures with levered arms, such as those described in the FormFactor Patents, including without limitation U.S. Pat. Nos. 5,476,211, 5,772,451, 5,820,014, 5,832,601, 5,852,871, 5,864,946, 5,884,398, 5,912,046 and 5,998,228, the disclosures of which patents are hereby incorporated herein in their entireties by this reference. Of course, in addition to their configurations, the materials from whichcores 18 are formed may also lend to their relative rigidity or flexibility. -
Conductive coating 20 may include one or more layers of conductive material suitable for use in forming or coating electrical contacts of semiconductor devices or other electronic components. By way of example only,conductive coating 20 may include one or more of a conductive layer, a barrier layer, and a noble layer. - An exemplary embodiment of the manner in which
contact 10 may be fabricated is illustrated inFIGS. 3 through 16 . -
FIG. 3 depicts a fabrication orsacrificial substrate 100 with ahard mask layer 102 thereon.Substrate 100 may be a sacrificial substrate. Also,substrate 100 may comprise a full or partial semiconductor (e.g., silicon, gallium arsenide, indium phosphide) wafer or a full or partial silicon-on-insulator (SOI) type substrate, such as a silicon-on-ceramic (SOC), silicon-on-glass (SOG), or silicon-on-sapphire (SOS) type substrate.Hard mask layer 102 may comprise silicon nitride or any other material (e.g., silicon oxynitride, silicon oxide, etc.) that is useful for forming a hard mask oversubstrate 100. -
Photoresist 104 is disposed upon asurface 103 ofhard mask layer 102 and patterned, as known in the art (e.g., by exposing the same, through a reticle, to one or more appropriate wavelengths of radiation, then developing the same), to form aphotomask 106.Photomask 106 includesapertures 108 through which regions ofhard mask layer 102 may subsequently be exposed to one or more etchants which are suitable for removing the material ofhard mask layer 102. The removal of material fromhard mask layer 102 results in the formation of ahard mask 110 withapertures 112 formed therethrough, as shown inFIG. 4 . - Turning now to
FIG. 5 ,apertures 112 ofhard mask 110 are located and configured to facilitate the subsequent formation ofrecesses 114 of desired configuration insubstrate 110. Of course, recesses 114 may be formed, for example, by etchingsubstrate 100 with one or more suitable etchants (isotropic or anisotropic), as known in the art. Eachrecess 114, which will facilitate the formation of a base 12 (FIGS. 1 and 2 ) of acontact 10, has a configuration which will impartbase 12 with a desired configuration. - As shown in
FIG. 6 , anotherhard mask layer 116 may be formed so as to cover at least the surfaces ofrecesses 114.Hard mask layer 116 may also cover the remaining portions ofhard mask layer 102. Likehard mask layer 102,hard mask layer 116 may be formed from any material which is suitable for use as a hard mask in semiconductor device fabrication processes, including, without limitation, silicon nitride, silicon oxynitride, silicon oxide, and the like. Of course, the processes that are used to formhard mask layer 116 depend upon the type of material to be used. - Once
hard mask layer 116 has been formed, asacrificial layer 118 is formed thereover, as shown inFIG. 7 . By way of example only,sacrificial layer 118 may be formed from aluminum by use of sputtering processes. As another example,sacrificial layer 118 may be formed from a photoresist, which may be applied tohard mask layer 116 by spin-on processes, then cured by exposure to one or more appropriate wavelengths of radiation and development with suitable developing chemicals. - Thereafter, as shown in
FIG. 7 , ifsacrificial layer 118 is formed from a metallic material, such as aluminum, anoptional plating mask 120 may be formed oversacrificial layer 118. Platingmask 120 is formed from a material that will not be plated assubstrate 100 is exposed into electrolytic, electroless, or immersion plating chemicals and conditions. Thus, platingmask 120 is formed over features onsubstrate 100 that would otherwise be plated upon exposure to plating chemicals and conditions, such as regions of a metallicsacrificial layer 118 that are not located withinrecesses 114. Features that are to be plated, such as the portions of a metallicsacrificial layer 118 that are located withinrecesses 114, are exposed throughapertures 122 of platingmask 120 to facilitate their subsequent exposure to plating chemicals and conditions. By way of example only, platingmask 120 may comprise a photomask, which is formed by disposing photoresist onsacrificial layer 118, then selectively exposing (e.g., through a reticle) and developing the photoresist to cure the same. - Turning now to
FIG. 8 , at least acore 18 of a contact 10 (FIGS. 1 and 2 ) may be formed within eachrecess 114 by known processes. - For example, as shown in
FIGS. 9 and 10 A through 10C,core 18 may be formed by stereolithographic processes, such as those described in U.S. Pat. No. 6,524,346 to Famworth, assigned to the assignee of the present invention and the disclosure of which is hereby incorporated herein in its entirety by this reference. Such processes may be used to form core 18 from a conductive material (e.g., a conductive polymer or conductive photopolymer) or from a dielectric material (e.g., a dielectric photopolymer). -
FIG. 9 schematically depicts an example of astereolithographic apparatus 1000 that may be used to fabricatecores 18, as well as several other components that embody teachings of the present invention.Stereolithographic apparatus 1000 includes afabrication tank 1100, amaterial consolidation system 1200, amachine vision system 1300, acleaning component 1400, and amaterial reclamation system 1500 that are associated withfabrication tank 1100. The depictedstereolithographic apparatus 1000 also includes asubstrate handling system 1600, such as a rotary feed system or linear feed system available from Genmark Automation Inc. of Sunnyvale, Calif., for moving fabrication substrates (e.g., substrates 100) from one system of the stereolithographic apparatus to another. Features of one or more of the foregoing systems may be associated with one ormore controllers 1700, such as computer processors or smaller groups of logic circuits, in such a way as to effect their operation in a desired manner. -
Controller 1700 may comprise a computer or a computer processor, such as a so-called “microprocessor,” which may be programmed to effect a number of different functions. Alternatively,controller 1700 may be programmed to effect a specific set of related functions or even a single function. Eachcontroller 1700 ofstereolithographic apparatus 1000 may be associated with a single system thereof or a plurality of systems so as to orchestrate the operation of such systems relative to one another. -
Fabrication tank 1100 includes achamber 1110 which is configured to contain asupport system 1130. In turn,support system 1130 is configured to carry one ormore substrates 100. -
Fabrication tank 1100 may also have areservoir 1120 associated therewith.Reservoir 1120 may be continuous withchamber 1110. Alternatively,reservoir 1120 may be separate from, but communicate with,chamber 1110 in such a way as to provideunconsolidated material 1126 thereto.Reservoir 1120 is configured to at least partially contain a volume 1124 ofunconsolidated material 1126, such as a photoimageable polymer, or “photopolymer,” particles of thermoplastic polymer, resin-coated particles, or the like. - Photopolymers believed to be suitable for use with a
stereolithography apparatus 1000 according to the present invention include, without limitation, ACCURA® SI 40 HC and AR materials and CIBATOOL SL 5170 and SL 5210 resins for the SLA® 250/50HR andSLA® 500 systems, ACCURA® SI 40 ND material and CIBATOOL SL 5530 resin for the SLA® 5000 and 7000 systems, and CIBATOOL SL 7510 resin for the SLA® 7000 system. The ACCURA® materials are available from 3D Systems, Inc., of Valencia, Calif., while the CIBATOOL resins are available from Ciba Specialty Chemicals Company of Basel, Switzerland. -
Reservoir 1120 or another component associated with one or both offabrication tank 1100 andreservoir 1120 thereof may be configured to maintain asurface 1128 of a portion of volume 1124 located withinchamber 1110 at a substantially constant elevation relative tochamber 1110. - A
material consolidation system 1200 is associated withfabrication tank 1100 in such a way as to direct consolidatingenergy 1220 intochamber 1110 thereof, toward at least areas ofsurface 1128 of volume 1124 ofunconsolidated material 1126 withinreservoir 1120 that are located oversubstrate 100. Consolidatingenergy 1220 may comprise, for example, electromagnetic radiation of a selected wavelength or a range of wavelengths, an electron beam, or other suitable energy for consolidatingunconsolidated material 1126.Material consolidation system 1200 includes asource 1210 of consolidatingenergy 1220. If consolidatingenergy 1220 is focused,source 1210 or alocation control element 1212 associated therewith (e.g., a set of galvanometers, including one for x-axis movement and another for y-axis movement) may be configured to direct, or position, consolidatingenergy 1220 toward a plurality of desired areas ofsurface 1128. Alternatively, if consolidatingenergy 1220 remains relatively unfocused, it may be directed generally towardsurface 1128 from a single, fixed location or from a plurality of different locations. In any event, operation ofsource 1210, as well as movement thereof, if any, may be effected under the direction ofcontroller 1700. - When
material consolidation system 1200 directs focused consolidatingenergy 1220 towardsurface 1128 of volume 1124 ofunconsolidated material 1126,stereolithographic apparatus 1000 may also include amachine vision system 1300.Machine vision system 1300 facilitates the direction of focused consolidatingenergy 1220 toward desired locations of features onsubstrate 100. As withmaterial consolidation system 1200, operation ofmachine vision system 1300 may be proscribed bycontroller 1700. If any portion ofmachine vision system 1300, such as acamera 1310 thereof, moves relative tochamber 1110 offabrication tank 1100, that portion ofmachine vision system 1300 may be positioned so as provide a clear path to all of the locations ofsurface 1128 that are located over eachsubstrate 100 withinchamber 1110. - Optionally, one or both of material consolidation system 1200 (which may include a plurality of mirrors 1214) and
machine vision system 1300 may be oriented and configured to operate in association with a plurality offabrication tanks 1100. Of course, one ormore controllers 1700 would be useful for orchestrating the operation ofmaterial consolidation system 1200,machine vision system 1300, andsubstrate handling system 1600 relative to a plurality offabrication tanks 1100. -
Cleaning component 1400 ofstereolithographic apparatus 1000 may also operate under the direction ofcontroller 1700.Cleaning component 1400 ofstereolithographic apparatus 1000 may be continuous with achamber 1110 offabrication tank 1100 or positioned adjacent tofabrication tank 1100. Ifcleaning component 1400 is continuous withchamber 1110, anyunconsolidated material 1126 that remains on asubstrate 100 may be removed therefrom prior to introduction of anothersubstrate 100 intochamber 1110. - If
cleaning component 1400 is positioned adjacent tofabrication tank 1100, residualunconsolidated material 1126 may be removed from asubstrate 100 assubstrate 100 is removed fromchamber 1110. Alternatively, anyunconsolidated material 1126 remaining onsubstrate 100 may be removed therefrom aftersubstrate 100 has been removed fromchamber 1110, in which case the cleaning process may occur as anothersubstrate 100 is positioned withinchamber 1110. -
Material reclamation system 1500 collects excessunconsolidated material 1126 that has been removed from asubstrate 100 by cleaningcomponent 1400, then returns the excessunconsolidated material 1126 toreservoir 1120 associated withfabrication tank 1100. - In use,
controller 1700, under control of computer-aided drafting (CAD) or stereolithography (.stl) programming, may orchestrate operation of various components ofstereolithographic apparatus 1000 to fabricatecores 18, as well as other features.FIGS. 10A through 10C depict an example of the manner in whichcores 18 may be fabricated. - With reference to
FIG. 1A ,substrate 100 is positioned on asupport platen 1112 withinchamber 1110 offabrication tank 1100. As depicted,substrate 100 is submerged within volume 1124 ofunconsolidated material 1126 so thatunconsolidated material 1126 fills recesses 114.Support platen 1112 is then raised such that the upper surface ofsubstrate 100 is brought to about the same level as (i.e., coplanar with)surface 1128 of volume 1124.Unconsolidated material 1126 withinrecesses 114 may then be selectively consolidated to form aninitial layer 18 a of each core 18 (FIG. 1C ). - Next, as shown in
FIG. 10B ,support platen 1112 may be lowered within chamber 1110 a distance that corresponds substantially to a thickness of anext layer 18 b (FIG. 10C ) of each core 18.Unconsolidated material 1126 of substantially the same thickness then flows oversubstrate 100 andlayer 18 a. Thereafter, selected regions of the newly formedlayer 1127 b ofunconsolidated material 1126 are at least partially consolidated to form or definelayer 18 b ofcore 18 therefrom.Layer 18 b is at least partially superimposed over, contiguous with, and mutually adhered to layer 18 a. - Turning to
FIG. 10C , these processes are repeated a number of times untilcore 18 has been completely formed. - When apparatus such as that shown in
FIG. 9 are used to fabricatecores 18, a number ofcores 18 may be simultaneously manufactured as a plurality of superimposed contiguous, mutually adhered material layers. - Another example of the manner in which
core 18 of acontact 10 of the present invention may be fabricated is shown inFIGS. 11A through 11C . In this example,core 18 may comprise a conductive material (e.g., gold, aluminum, etc.) and may be formed using a dispenseelement 70, such as a wire-bonding capillary, such as in the manner described in the FormFactor Patents. Alternatively, the material ofcore 18 may be dispensed with a needle, such as the type used to dispense underfill materials and other packaging materials. Of course, the use of other suitable methods for fabricatingcores 18 ofcontacts 10 according to the present invention are also within the scope of the present invention. - In
FIG. 11A , dispenseelement 70 is positioned over arecess 114 insubstrate 100 and a core material introduced intorecess 114 to form afirst portion 18 a′ of core 18 (FIG. 8 ), which comprises at least a portion ofbase 12 of contact 10 (FIGS. 1, 2 , and 11B). Thereafter, dispenseelement 70 may be raised to form a protrudingportion 18 b′ ofcore 18, which forms part ofintermediate section 14 of contact 10 (FIGS. 1 and 2 ). Onceintermediate section 14 has been formed, as shown inFIG. 11C , movement of dispenseelement 70 may be momentarily ceased to facilitate formation of atip section 18 c′ which is enlarged relative tointermediate section 14. Dispenseelement 70 may again be raised to complete formation oftip 16 ofcore 18, as shown inFIG. 11D . - Each core 18 may then be plated or otherwise coated with conductive material to form a
conductive coating 20 thereon, as shown inFIG. 12 .Conductive coating 20 may be formed by way of known electrolytic, electroless, or immersion plating techniques. Ifcore 18 is formed from a nonmetallic material, such as a dielectric photopolymer, it may be necessary to prepare or treat the surface ofcore 18, as known in the art, prior to formingconductive coating 20 thereon.Conductive coating 20 may include one or more sublayers. For example, ifcore 18 is formed from a dielectric material,conductive coating 20 may include a conductive sublayer (e.g., a sublayer of copper, aluminum, etc.), as well as a barrier sublayer (e.g., a sublayer of nickel) and a noble sublayer (e.g., a sublayer of gold). As another example, ifcore 18 comprises a conductive material,conductive coating 20 may include a barrier sublayer and a noble sublayer. Platingmask 120 prevents other features onsubstrate 100 from being plated. - As shown in
FIGS. 13A through 15 , a support plate 130 (FIG. 15 ) may be formed aroundintermediate sections 14 ofcontacts 10. By way of example only, known stereolithographic processes may be used to fabricatesupport plate 130, such as with the apparatus shown in and described with respect toFIG. 9 . - In
FIG. 13A ,substrate 100, along withcontacts 10 and all of the other features that have been formed therein and thereon, may be partially submerged beneath asurface 202 of avolume 200 of photopolymer, withtips 16 and portions ofintermediate sections 14 ofcontacts 10 protruding abovesurface 202.Surface 202 may then be exposed to radiation of one or more wavelengths that are appropriate for at least partially polymerizing, or consolidating, the photopolymer atsurface 202 to form alayer 132 a of support plate 130 (FIG. 15 ). Preferably, such exposure is effected with focused radiation 204 (e.g., a laser beam), which has a focal point that facilitates control of a depth T1 to which the photopolymer is at least partially consolidated and, thus, a thickness oflayer 132 a. Further, by angling an energy beam used to exposesurface 202 to radiation from a perpendicular orientation to expose thesurface 202 undertip 16, such consolidation may be effected so that at least portions of the outer peripheries ofbase 12 andtip 16 are superimposed over one or more portions oflayer 132 a to trapintermediate section 14 ofcontact 10 withinlayer 132 a. - Once
layer 132 a has been formed,substrate 100 andlayer 132 a may be submerged withinvolume 200 of photopolymer a distance which corresponds to a thickness T2 of a next-higher layer 132 b of support plate 130 (FIG. 15 ), as shown inFIG. 13B . The process described in reference toFIG. 13A may then be repeated to formlayer 132 b ofsupport plate 130, withlayer 132 b being at least partially superimposed over, contiguous with, and mutually adhered to the previously formedlayer 132 a. This process may be repeated until asupport plate 130 of desired thickness has been formed. - After each
layer support plate 130 has been formed,substrate 100,contacts 10, andsupport plate 130 may be removed fromvolume 200 of photopolymer, as shown inFIG. 14 . Thereafter, the material oflayers support plate 130 is complete, as shown inFIG. 15 ,support plate 130 andcontacts 10 extending therethrough form a probe card 30 (see alsoFIG. 19 ). Optionally,support plate 130 may be formed as a large panel and severed after fabrication thereof into smaller segments to form a plurality ofprobe cards 30. - Turning now to
FIG. 16 , an example of the manner in whichcontacts 10 may be freed fromsubstrate 100 is shown. Sacrificial layer 118 (FIG. 15 ) and, optionally, plating mask 120 (FIG. 15 ) may be removed by known processes. Ifsacrificial layer 118 is formed from aluminum, one or more suitable etchants (e.g., tetramethyl ammonium hydroxide (TMAH), potassium hydroxide (KOH), sodium hydroxide (NaOH), etc., or any combination thereof) may be used to dissolve or otherwise remove the aluminum. If a photoresist was used to formsacrificial layer 118,sacrificial layer 118 may be exposed to a resist strip suitable for dissolving or otherwise removing the photoresist. Whensacrificial layer 118 is removed, overlying structures are “lifted-off” ofsubstrate 100. Thus, bases 12 ofcontacts 10 are no longer anchored withinrecesses 114 and may be removed therefrom.Substrate 100 may then be discarded. Alternatively,substrate 100 may again be used in the processes described with reference toFIGS. 6 through 16 to formadditional contacts 10. - As an alternative to the process shown in
FIGS. 3 through 16 ,Contacts 10 according to the present invention may be fabricated without formingrecesses 114 in asacrificial substrate 100. Instead, as shown inFIGS. 3A, 6A , and 7A,substrate 100 may merely be coated with a hard mask layer 102 (FIG. 3A ), asacrificial layer 118 formed thereover (FIG. 6A ), and platingmask 120 formed over selected regions (i.e., those wherecontacts 10 are not to be formed) of sacrificial layer 118 (FIG. 7A ).Contacts 10 may then be formed by the processes that have been described in reference toFIGS. 8 through 16 . Of course, when nonstereolithographic processes are used to formcores 18, the areas ofcores 18 which are formed on exposed regions ofsacrificial layer 118 may be flat, or planar. In addition, the shape of each core 18, atbase 12 ofcontact 10, may be limited by the process and materials that are used to form thatcore 18. - Referring now to
FIGS. 17 and 18 , if the substrate upon whichcontacts 10 are to be fabricated is not a fabrication or sacrificial substrate but, rather, asubstrate 100′ that carries one ormore semiconductor devices 208 or other semiconductor device components (e.g., interposers),contacts 10 may instead be formed directly oncontact pads 210 of thesemiconductor devices 208 or other semiconductor device components, such as by the above-described processes. By way of example only, the processes that are depicted in and described with reference toFIGS. 7 through 12 may be used to formcontacts 10 directly oncontact pads 210 of one ormore semiconductor devices 208 or other semiconductor device components. Of course, as shown inFIG. 18 , if acore 18 of eachcontact 10 comprises a dielectric material,conductive coating 20 must provide a conductive path from thecorresponding contact pad 210, alongbase 12 andintermediate section 14 ofcontact 10, and ontotip 16 thereof. - The present invention also includes probe cards, as well as methods for fabricating probe cards. As depicted in
FIG. 19 a probe card 30 may be positioned between one ormore semiconductor devices 40 and a test or bum-insubstrate 50.Contacts 10 ofprobe card 30 are located so as to align betweenbond pads 42 of eachsemiconductor device 40 andcorresponding terminals 52 of a test or bum-insubstrate 50 which is configured for use withsemiconductor device 40. Eachcontact 10 ofprobe card 30 is configured to temporarily establish electrical communication between itscorresponding bond pad 42 and terminal 52 as one or both ofsemiconductor device 40 and test or bum-insubstrate 50 is biased toward the other. In this fashion,probe card 30 facilitates the testing or burning-in of one ormore semiconductor devices 40 with appropriate test or burn-in equipment (not shown) with which test or burn-insubstrate 50 has been assembled. - One example of a
probe card 30 according to the present invention is shown inFIG. 15 . Another example ofprobe card 30′ that incorporates teachings of the present invention is depicted inFIG. 20 . In addition to includingcontacts probe card -
FIGS. 21 through 26 illustrate one embodiment of a method for fabricatingprobe card 30′, whileFIGS. 32 through 38 depict another embodiment of a method by whichprobe card 30′ may be fabricated. - As shown in
FIG. 20 ,probe card 30′ includes asupport plate 130′ withmajor surfaces 133′ and 134′ that face opposite directions.Apertures 131′ (FIG. 22 ) are formed throughsupport plate 130′ at locations which correspond to the locations of bond pads 42 (FIG. 19 ) and terminals 52 (FIG. 19 ), respectively, on semiconductor devices 40 (FIG. 19 ) and test or bum-in substrates 50 (FIG. 19 ) with whichprobe card 30′ is configured to be used. Acontact 10′ extends through eachaperture 131′ ofsupport plate 130′, with oneend 23′ that protrudes fromsurface 133′ and anotherend 24′ that protrudes fromsurface 134′. - With reference to
FIG. 26 , eachcontact 10′ includes anouter shell 20′ which includes achannel 21′ extending substantially centrally through the length, or height, thereof. As shown,channel 21′ may contain a quantity of conductive material, which forms aconductive core 18′ that extends through the entire length ofouter shell 20′. -
Outer shell 20′ may be rigid or flexible, depending at least in part upon the configuration thereof and the materials that are used to form the same. Also, the material or materials from whichouter shell 20′ is fabricated may be dielectric or electrically conductive. As illustrated,outer shell 20′ includes twocollars 25′ and 26′, which extend radially from the remainder (e.g., abody 22′) ofouter shell 20′ and are positioned so as to be located adjacent toopposite surfaces 133′ and 134′, respectively, ofsupport plate 130′ (FIG. 20 ). - As depicted, the ends of
conductive core 18′ may be enlarged at ends 23′ and 24′ ofcontact 10′ and extend onto portions ofouter shell 20′ that are located at ends 23′ and 24′. A base 12′ of each core 18′ and, thus, ofcontact 10′ of whichcore 18′ is a part establishes electrical communication with a correspondingterminal 52 of test or bum-in substrate 50 (FIG. 19 ), while atip 16′ of eachcontact 10′ establishes electrical communication with acorresponding bond pad 42 of a semiconductor device 40 (FIG. 19 ) to be tested or burned-in. While the connection betweenbase 12′ and terminal 52 may be temporary (e.g., by biasingbase 12′ against terminal 52) or permanent (e.g., by bondingbase 12′ to terminal 52), it is currently preferred that the connection betweentip 16′ andbond pad 42 be temporary (e.g., by biasingtip 16′ against bond pad 42). - Turning now to
FIGS. 21 through 26 , an exemplary method for fabricatingprobe card 30′ andcontacts 10′ thereof is depicted. - In
FIG. 21 , asubstrate 300 is provided.Substrate 300 may be a substantially planar member, as depicted, or have any other suitable shape. Moreover,substrate 300 may be formed from a variety of suitable materials, including, without limitation, polymers, metals, dielectric materials (e.g., glass, ceramic, etc.), semiconductor materials (e.g., silicon, gallium arsenide, indium phosphide, etc.), or any combination of the foregoing. Specific examples of structures that may be employed assubstrate 300 include full or partial wafers of semiconductor material and full or partial SOI-type substrates. - Turning to
FIG. 22 ,apertures 310 are formed throughsubstrate 300 at locations wherecontacts 10′ (FIG. 20 ) are to be located.Apertures 310 may be formed by any process which is suitable for use with the material ofsubstrate 300. By way of example only,apertures 310 may be formed throughsubstrate 300 by known drilling techniques (e.g., laser drilling, mechanical drilling, etc.). Alternatively, mask and etch processes may be used to formapertures 310 through desired locations ofsubstrate 300. - If
substrate 300 comprises a conductive or semiconductive material, surfaces 312 ofapertures 310 may be coated with alayer 314 of dielectric material, as shown inFIG. 23 .Layer 314 of dielectric material may likewise extend onto all or part ofsurfaces substrate 300. In addition to passivatingsurfaces layer 314 may facilitate adhesion of subsequently formed structures tosubstrate 300. By way of example only,layer 314 may comprise silicon oxide, silicon nitride, or silicon oxynitride and may be formed by any suitable process known in the art (e.g., silicon oxide may be grown, spun-on, or deposited; silicon nitride and silicon oxynitride may-be deposited). - As shown in
FIG. 24 , at least portions of contacts may be formed within at least someapertures 310 ofsubstrate 300. For example and as illustrated inFIG. 24 , anouter shell 20′ of acontact 10′ (FIG. 26 ) may be formed within eachaperture 310.Outer shell 20′ may comprise a dielectric material (e.g., a dielectric photopolymer) and may be fabricated by known stereolithography processes, such as those described above in reference toFIGS. 13A through 15 . Asouter shell 20′ may includecollars 25′ and 26′ that are to be positioned adjacentopposite surfaces substrate 300, theportion 20 a′ ofouter shell 20′ that protrudes fromsurface 302 may be fabricated, thensubstrate 300 flipped, or inverted, so that theremainder 20 b′ ofouter shell 20′, which protrudes fromsurface 304 ofsubstrate 300, may be fabricated. -
Outer shell 20′ may be fabricated with achannel 21′ extending therethrough, orchannel 21′ may be subsequently formed therethrough by known processes (e.g., with a laser drill, mechanical drill, etc.). Optionally,channel 21′ may be formed during the fabrication ofouter shell 20′, then bored to increase one or more cross-sectional dimensions (e.g., radius and circumference) thereof. - Next, as depicted in
FIG. 25 ,conductive material 316 is introduced intochannel 21′. By way of example only, needle-dispense processes may be used to introduceconductive material 316 intochannel 21′ orconductive material 316 may be introduced intochannel 21′ using a pressurized wire-bonding capillary. If needle dispense processes are used, a conductive or conductor-filled polymer may be introduced intochannel 21′, then cured by suitable processes (e.g., exposure to an appropriate wavelength of radiation, heat, etc.). When a wire-bonding capillary is used to force, under positive pressure, a molten metal (e.g., gold, copper, aluminum, etc.) intochannel 21′, the metal will harden upon being cooled. Of course, the material from whichouter shell 20′ is formed should be able to withstand the temperature of the molten metal ofconductive material 316, as well as substantially maintain its structural integrity when exposed to the molten metal. - As a result of introducing
conductive material 316 intochannel 21′, aconductive element 320 is formed therein.Conductive element 320 includes afirst end 323, which is exposed at and may protrude fromend 23′ ofcontact 10′, and asecond end 324, which is exposed at and may protrude fromend 24′ ofcontact 10′. -
FIG. 26 depicts the formation of acap contact 10′ from ends 323 and 324 (FIG. 25 ), respectively, ofconductive element 320, which may complete the formation ofcore 18′ ofcontact 10′. Whenconductive element 320 comprises a conductive or conductor-filled polymer, caps 325 and 326 may be formed prior to curing or solidifying conductive material 316 (FIG. 25 ), as the at least partially liquidconductive material 316 flows onto ends ofouter shell 20′. Ifconductive material 316 comprises metal, caps 325 and 326 may be formed by heating ends 323 and 324 ofconductive element 320 to a molten state and permitting them to flow onto the ends ofouter shell 20′. - Additionally, as shown in
FIGS. 29 and 30 , one or both ends 323, 324 of conductive element 320 (FIG. 26 ) may be drawn, by known techniques, so as to form an extension (e.g.,extension 328 ofFIG. 29 orextension 328′ ofFIG. 30 ) fromcore 18′ (FIG. 26 ), which extension protrudes fromouter shell 20′, 20″ ofcontact 10′, 10″, repectively. Alternatively, one or more extensions (e.g.,extensions core 18′. By way of example only, a wire-bonding capillary may be used to draw or form each extension. - As an alternative to the use of dielectric material to form an
outer shell 20′, electricallyconductive contacts 10′″ may be formed within at least someapertures 310 ofsubstrate 300, as shown inFIG. 24 . As an example, stereolithography processes, such as those described above in reference toFIGS. 13A through 15 , may be used to formcontacts 10 from conductive material, such as a conductive or conductor-filled photopolymer. - As another alternative, thermoplastic material may be sprayed, or “jetted,” onto
substrate 300 layer-by-layer. Examples of such processes are described in U.S. Pat. Nos. 6,532,394, 6,508,971, 6,492,651, 6,490,496, 6,406,531, 6,352,668, 6,347,257, 6,305,769, 6,270,335, 6,193,923, 6,133,355, 5,340,433, 5,260,009, 5,216,616, 5,141,680, 5,134,569, 5,121,329, and 4,665,492, the disclosures of each of which are hereby incorporated herein in their entireties by this reference. Additional examples of such processes are described in Grimm, Todd, “Stereolithography, Selective Laser Sintering and PolyJet™: Evaluating and Applying the Right Technology,” Pamphlet produced by Accelerated Technologies, Inc. of Austin, Tex. (2002), and in the pamphlet entitled “PolyJet 2nd Generation Technology,” which was produced by Objet Geometries Ltd. of Rehovot, Israel, in 2003, the disclosures of both of which are hereby incorporated herein, in their entireties, by this reference. - Of course, when a
conductive contact 10″ is formed directly within one ormore apertures 310 ofsubstrate 300, it may not be necessary to form a core of another conductive material therein, although doing so (e.g., by the processes described above with reference toFIGS. 24 through 26 ) is within the scope of the present invention. -
FIGS. 27 through 31 illustrate examples of different configurations of contacts (e.g.,contacts 10′, 10″) according to the present invention. - Another exemplary embodiment of a method for fabricating a
probe card 30′ (FIG. 20 ) in accordance with teachings of the present invention is depicted inFIGS. 32 through 38 . - In
FIG. 32 , conductive elements 418 (only one being shown) are formed on asubstrate 400. Eachconductive element 418 is a substantially linear structure which protrudes fromsubstrate 400 and which is secured to asurface 402 thereof with abonding joint 416. Any suitable, known process may be used to formconductive elements 418. For example, and not to limit the scope of the present invention,bonding joints 416 andconductive elements 418 may be formed with a wire-bonding capillary. - Next, as shown in
FIG. 33 , aportion 20 a′ of anouter shell 20′ (FIG. 26 ) is formed around anintermediate section 419 of eachconductive element 418.Portions 20 a′ may be formed by stereolithography processes, such as those which have been described above in reference toFIGS. 13 through 15 . - As depicted, each
portion 20 a′ includes a protrudingelement 27′, acollar 25′, and a taperedalignment element 29′. Protrudingelement 27′ is an elongate member which may be cylindrical in shape.Collar 25′ is located adjacent to protrudingelement 27′ and extends outwardly (e.g., radially) therefrom.Alignment element 29′, which may be frustoconical in shape, is positioned adjacent tocollar 25′ and on an opposite side thereof from protrudingelement 27′. Althoughalignment element 29′ is depicted as abuttingcollar 25′, it may be spaced apart therefrom by a section ofportion 20 a′ which has a reduced cross section relative tocollar 25′ andalignment element 29′. - Thereafter, as illustrated in
FIG. 34 , asubstrate 300 through whichapertures 310 have already been formed (see, e.g.,FIG. 22 and accompanying text) is positioned oversubstrate 400, withapertures 310 being aligned overconductive elements 418 andportions 20 a′ ofouter shells 20′ that have been formed thereon. Such alignment may be effected in any suitable manner known in the art, e.g., mechanically, optically, or otherwise. - Once
substrate 300 has been properly positioned, withalignment elements 29′ of eachportion 20 a′ being at least partially disposed within a correspondingaperture 310 and a portion of eachconductive element 418 extending through the correspondingaperture 310 ofsubstrate 300, aremainder 20 b′ of eachouter shell 20′ may be fabricated, as illustrated inFIG. 35 . As shown, eachremainder 20 b′ extends partially intoaperture 310 and includes features, such as the depictedcollar 26′ and protrudingelement 28′, which protrude fromsurface 302 ofsubstrate 300. By way of example only, known stereolithography processes, such as those described with respect toFIGS. 13 through 15 , may be used to form eachremainder 20 b′ and, thus, to complete the formation of each correspondingouter shell 20′. -
FIG. 36 shows that, if desired,conductive elements 418 may be bent. Such bending may be effected, for example, by moving one or both ofsubstrate 300 andsubstrate 400 relative to the other, as indicated byarrows - Once
outer shells 20′ have been fabricated, as depicted inFIG. 37 , bonding joints 416 may be removed from substrate 400 (e.g., by heating at least bonding joints 416) orconductive elements 418 severed (e.g., cut) to facilitate the removal ofsubstrate 400 from the remainder of the assembly. - As
FIG. 38 illustrates, acap contact 10′ from ends 423 and 424 (FIG. 36 ), respectively, ofconductive element 418, which may complete the formation ofcore 18′ ofcontact 10′. As an example of the manner in which caps 425 and 426 may be formed, ends 423 and 424 ofconductive element 418 may be heated to a molten state and permitted to flow onto the ends ofouter shell 20′. - Optionally, one or both ends 323, 324 of
conductive element 320 may be drawn, by known techniques, in such a way as to form an extension (e.g.,extension 328 ofFIG. 29 orextension 328′ ofFIG. 30 ) fromcore 18′, which extension protrudes fromouter shell 20′ ofcontact 10′. Alternatively, one or more extensions may be formed separately fromcore 18′. By way of example only, a wire-bonding capillary may be used to draw or form each extension. - At some point during the process that has been described with reference to
FIGS. 32 through 38 , and with returned reference toFIG. 36 , alayer 420 of conductive material may be formed on exposed portions of eachconductive element 418.Layer 420 may comprise a single layer or a plurality of sublayers (e.g., a barrier sublayer, a noble sublayer, etc.), each of which may, by way of nonlimiting example, be formed by way of known plating processes.Layer 420 may impart some rigidity toconductive element 418, providing some resilience whenconductive element 418 is compressed or otherwise flexed. Alternatively, or additionally,layer 420 may prevent oxidation or corrosion ofconductive element 418. - Such plating may be effected just after the formation of conductive elements 418 (
FIG. 32 ), following the bending, if any, of conductive elements 418 (FIG. 35 ), or at any other suitable point during the fabrication of aprobe card 30 in accordance with the processes ofFIGS. 32 through 37 . - In another aspect, the present invention includes protective structures that are configured to prevent damage to a contact (e.g., contact 10, 10′) of the present invention.
FIGS. 39 through 41 depict exemplary embodiments ofprotective structures - The embodiment of
protective structure 500 shown inFIG. 39 comprises amaterial layer 501 that is secured to a surface of a substrate, illustrated merely as an example as being aprobe card 30.Contacts 10 may protrude a greater distance from asurface 32 ofprobe card 30 than the distance thatlayer 501 protrudes fromsurface 32. As shown, a plurality ofreceptacles 510 are formed inmaterial layer 501, within which portions ofcontacts 10 are located.Surfaces 512 of eachreceptacle 510 may be spaced apart from thecontact 10 therein so as to permit some compression or flexion ofcontact 10, while preventingcontact 10 from being compressed or flexed beyond its elastic limit, which is largely dependent upon the material or materials from whichcontact 10 has been fabricated. The thickness ofmaterial layer 501 when subjected to compressive loading may also prevent eachcontact 10 from being compressed or flexed beyond its elastic limit. - Another exemplary embodiment of
protective structure 500′ is shown inFIG. 40 . Eachprotective structure 500′ is a cup-shaped structure that includes awall 501′ and asingle receptacle 510′ formed within the interior ofwall 501′. As depicted,protective structure 500′ is located on a surface of a substrate (asemiconductor device 40 in the depicted example), withreceptacle 510′ laterally surrounding at least a portion of acontact 10 that protrudes from abond pad 42 ofsemiconductor device 40. As withprotective structure 500,surfaces 512′ ofreceptacle 510′ may be spaced apart from thecontact 10 therein so as to permit some compression or flexion ofcontact 10, while preventingcontact 10 from being compressed or flexed beyond its elastic limit. The distance eachprotective structure 500′ protrudes from the substrate when subjected to compressive loading may also prevent eachcontact 10 from being compressed or flexed beyond its elastic limit. -
FIG. 41 illustrates yet another exemplary embodiment ofprotective structure 500″. Eachprotective structure 500″ comprises a post-like structure or other element which protrudes from a surface of a substrate, such as the depicted carrier substrate 60 (e.g., an interposer, circuit board, etc.) at a location which is adjacent to aterminal 62 ofcarrier substrate 60 and, thus, proximate to the location at which acontact 10 protrudes fromcarrier substrate 60. The heights ofprotective structures 500″ are configured to preventcontacts 10 from being compressed or flexed under compressive forces beyond their elastic limits. - Each of the foregoing embodiments of
protective structures FIGS. 13A through 15 . As such, a protective structure of the present invention may include a plurality of at least partially superimposed, contiguous, mutually adhered layers of material. All of the layers may be formed from the same material, or a variety of materials (e.g., materials with different degrees of compressibility or flexibility and resilience) may be used, depending at least in part upon the desired properties of the protective structure. Of course, other suitable techniques may also be used to form protective structures that incorporate teachings of the present invention. - Protective structures according to the present invention may be fabricated directly on a substrate, or fabricated separately from the substrate, then secured thereto (e.g., with a suitable adhesive material).
- Although the foregoing description contains many specifics, these should not be construed as limiting the scope of the present invention, but merely as providing illustrations of some of the presently preferred embodiments. Similarly, other embodiments of the invention may be devised which do not depart from the spirit or scope of the present invention. Moreover, features from different embodiments of the invention may be employed in combination. The scope of the invention is, therefore, indicated and limited only by the appended claims and their legal equivalents, rather than by the foregoing description. All additions, deletions, and modifications to the invention, as disclosed herein, which fall within the meaning and scope of the claims are to be embraced thereby.
Claims (50)
1. A method for fabricating a probe card, comprising:
forming a sacrificial layer over a surface of a fabrication substrate;
forming at least one elongate contact over the sacrificial layer;
forming a support plate laterally around an intermediate section of the at least one elongate contact; and
removing the sacrificial layer to facilitate removal of the at least one contact from the fabrication substrate.
2. The method of claim 1 , further comprising:
forming at least one recess within the fabrication substrate prior to the forming the sacrificial layer.
3. The method of claim 1 , further comprising:
forming a layer comprising silicon nitride prior to the forming the sacrificial layer.
4. The method of claim 1 , wherein forming the sacrificial layer comprises forming a layer comprising aluminum.
5. The method of claim 4 , further comprising:
forming a plating mask over portions of the layer comprising aluminum where contacts are not to be formed.
6. The method of claim 5 , further comprising:
plating regions of the layer comprising aluminum that are exposed through the plating mask.
7. The method of claim 1 , wherein forming the at least one contact comprises selectively consolidating unconsolidated material in accordance with a program.
8. The method of claim 7 , wherein selectively consolidating unconsolidated material comprises stereolithographically fabricating at least a portion of the at least one contact.
9. The method of claim 1 , wherein forming the at least one contact comprises forming the at least one contact with a wire-bonding capillary.
10. The method of claim 1 , wherein forming the support plate comprises selectively consolidating unconsolidated material in accordance with a program.
11. The method of claim 10 , wherein selectively consolidating unconsolidated material comprises stereolithographically fabricating the support plate.
12. The method of claim 1 , further comprising:
plating exposed portions of the at least one contact with conductive material.
13. A method for fabricating a probe card, selectively consolidating unconsolidated material to form at least a portion of at least one of a support plate and a contact of the probe card.
14. The method of claim 13 , wherein selectively consolidating is effected in accordance with a program.
15. The method of claim 14 , wherein selectively consolidating comprises stereolithography.
16. The method of claim 13 , wherein selectively consolidating comprises forming at least a portion of the contact.
17. The method of claim 16 , wherein forming at least a portion of the contact comprises fabricating a core of the contact.
18. The method of claim 16 , wherein forming at least a portion of the contact comprises forming an outer shell of the contact.
19. The method of claim 13 , wherein selectively consolidating comprises forming at least a portion of the support plate.
20. The method of claim 19 , wherein forming at least a portion of the support plate is effected around an intermediate portion of at least the contact.
21. A method for fabricating a probe card, comprising:
forming a sacrificial layer over a surface of a fabrication substrate;
forming at least one elongate contact over the sacrificial layer;
selectively consolidating unconsolidated material in accordance with a program to form a support plate laterally around an intermediate section of the at least one elongate contact; and
removing the sacrificial layer to facilitate removal of the at least one contact from the fabrication substrate.
22. The method of claim 21 , wherein forming the at least one elongate contact includes:
forming a core; and
coating conductive material onto the core.
23. The method of claim 22 , wherein forming the core comprises selectively consolidating unconsolidated material in accordance with a program.
24. The method of claim 23 , wherein coating conductive material comprises depositing conductive material onto the core.
25. A method for fabricating a probe card, comprising:
providing a substrate including at least one aperture therethrough;
fabricating an outer shell of a contact to extend through the at least one aperture; and
introducing conductive material into a channel extending through the outer shell.
26. The method of claim 25 , wherein fabricating the outer shell includes forming the channel in the outer shell.
27. The method of claim 25 , further comprising: forming the channel through the outer shell after fabricating the outer shell.
28. The method of claim 25 , wherein fabricating the outer shell includes selectively consolidating unconsolidated material in accordance with a program.
29. The method of claim 28 , wherein selectively consolidating unconsolidated material in accordance with a program comprises stereolithographically fabricating the outer shell.
30. The method of claim 25 , wherein fabricating the outer shell comprises:
forming a first section of the outer shell;
inverting the substrate; and
forming a second section of the outer shell.
31. The method of claim 25 , wherein fabricating the outer shell comprises forming a first section of the outer shell around the elongate element comprising conductive material.
32. The method of claim 31 , further comprising:
aligning the at least one aperture of the substrate with elongate element and the first section; and
introducing at least a portion of the first section into the at least one aperture.
33. The method of claim 32 , wherein fabricating the outer shell further comprises forming a second section of the outer shell around the elongate element after introducing at least the portion of the first section into the at least one aperture.
34. The method of claim 31 , further comprising:
forming the elongate element.
35. The method of claim 34 , wherein forming is effected with a wire-bonding capillary.
36. The method of claim 34 , wherein forming comprises forming the elongate element so as to protrude from a bonding joint and the substrate.
37. The method of claim 36 , further comprising:
separating the elongate element from the substrate after fabricating the outer shell.
38. The method of claim 37 , wherein separating comprises at least one of cutting the elongate element and heating at least a joint between the elongate element and the substrate.
39. The method of claim 25 , further comprising:
forming a conductive cap from the conductive material at at least one end of the contact.
40. The method of claim 25 , further comprising:
forming an elongate conductive element that protrudes from at least one end of the contact.
41. A method for fabricating a probe card, comprising:
providing a substrate including at least one aperture therethrough;
forming at least one contact to extend through the at least one aperture, enlarged ends of the at least one contact configured to retain the at least one contact within the at least one aperture, the act of forming including:
forming an outer shell of the at least one contact; and
forming a conductive element of the at least one contact, the conductive element extending through at least a portion of the outer shell.
42. A semiconductor device component, comprising:
a substrate;
at least one flexible, resilient contact protruding from at least one surface of the substrate; and
at least one protective structure positioned on the at least one surface so as to prevent deformation of the at least one flexible, resilient contact beyond an elastic limit thereof.
43. The semiconductor device component of claim 42 , wherein the substrate comprises at least one of a semiconductor device, an interposer, a carrier substrate, a test substrate, and a probe card.
44. The semiconductor device component of claim 42 , wherein the at least one protective structure comprises a substantially planar member with at least one aperture formed therethrough, the at least one flexible, resilient contact being located within the at least one aperture and at least partially laterally surrounded by the substantially planar member.
45. The semiconductor device component of claim 42 , wherein the at least one protective structure comprises an individual structure that surrounds at least a portion of each of the at least one flexible, resilient contact protruding from the at least one surface of the substrate.
46. The semiconductor device component of claim 45 , wherein the at least one protective structure includes an aperture within which the at least one flexible, resilient contact is at least partially located.
47. The semiconductor device component of claim 42 , wherein the at least one protective structure comprises a plurality of laterally discrete elements, each laterally discrete element of the plurality protruding from the at least one surface of the substrate laterally adjacent to a flexible, resilient contact.
48. The semiconductor device component of claim 42 , wherein the at least one protective structure has a height that at least partially prevents the at least one flexible, resilient contact from being deformed beyond its elastic limit.
49. The semiconductor device component of claim 42 , wherein the at least one protective structure is spaced apart from the at least one flexible, resilient contact a distance which at least partially prevents the at least one flexible, resilient contact from being deformed beyond its elastic limit.
50. The semiconductor device component of claim 42 , wherein the at least one protective structure includes a plurality of adjacent, mutually adhered regions.
Priority Applications (1)
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US11/429,011 US20060205291A1 (en) | 2004-02-27 | 2006-05-04 | Methods for fabricating electronic device components that include protruding contacts and electronic device components so fabricated |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/788,941 US7094117B2 (en) | 2004-02-27 | 2004-02-27 | Electrical contacts with dielectric cores |
US11/429,011 US20060205291A1 (en) | 2004-02-27 | 2006-05-04 | Methods for fabricating electronic device components that include protruding contacts and electronic device components so fabricated |
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US10/788,941 Division US7094117B2 (en) | 2004-02-27 | 2004-02-27 | Electrical contacts with dielectric cores |
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US20060205291A1 true US20060205291A1 (en) | 2006-09-14 |
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US10/788,941 Expired - Fee Related US7094117B2 (en) | 2004-02-27 | 2004-02-27 | Electrical contacts with dielectric cores |
US11/429,011 Abandoned US20060205291A1 (en) | 2004-02-27 | 2006-05-04 | Methods for fabricating electronic device components that include protruding contacts and electronic device components so fabricated |
US11/429,012 Abandoned US20060211313A1 (en) | 2004-02-27 | 2006-05-04 | Programmed material consolidation processes for fabricating electrical contacts and the resulting electrical contacts |
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US10/788,941 Expired - Fee Related US7094117B2 (en) | 2004-02-27 | 2004-02-27 | Electrical contacts with dielectric cores |
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US11/429,012 Abandoned US20060211313A1 (en) | 2004-02-27 | 2006-05-04 | Programmed material consolidation processes for fabricating electrical contacts and the resulting electrical contacts |
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US7094117B2 (en) | 2006-08-22 |
US20050191913A1 (en) | 2005-09-01 |
US20060211313A1 (en) | 2006-09-21 |
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