US20060115999A1 - Methods of exposure for the purpose of thermal management for imprint lithography processes - Google Patents
Methods of exposure for the purpose of thermal management for imprint lithography processes Download PDFInfo
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- US20060115999A1 US20060115999A1 US11/292,402 US29240205A US2006115999A1 US 20060115999 A1 US20060115999 A1 US 20060115999A1 US 29240205 A US29240205 A US 29240205A US 2006115999 A1 US2006115999 A1 US 2006115999A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Definitions
- the field of the invention relates generally to nano-fabrication of structures. More particularly, the present invention is directed to a technique to achieve overlay alignment of patterns formed during nano-scale fabrication.
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nano-meters or smaller.
- One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
- nano-fabrication becomes increasingly important.
- Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
- Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography.
- Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled, “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
- the fundamental imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
- the substrate may be positioned upon a motion stage to obtain a desired position to facilitate patterning thereof.
- a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate.
- the liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid.
- the template is then separated from the solidified layer such that the template and the substrate are spaced-apart.
- the substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer.
- the present invention is directed to a method that attenuates, if not avoids, heating of a substrate undergoing imprint lithography process and the deleterious effects associated therewith.
- the present invention includes a method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy in which a sub-portion of the field is exposed sufficient to cure the polymeric material in said sub-portion followed by a blanket exposure of all of the polymeric material associated with the entire field to cure/solidify the same.
- FIG. 1 is a simplified plan view of an imprint lithography system having a mold spaced-apart from a substrate;
- FIG. 2 is a cross-sectional view of a patterned substrate having a plurality of layers disposed thereon with a mold, shown in FIG. 1 , in superimposition therewith;
- FIG. 3 is a simplified side view of a portion of the system shown in FIG. 1 , with the mold in contact with a polymeric layer on the substrate;
- FIG. 4 is a top-down view of a portion of the substrate shown in FIG. 1 , the substrate having a plurality of regions associated therewith;
- FIGS. 5 and 6 are side views of portions of the mold and the polymeric layer, shown in FIG. 3 , with a portion of the polymeric layer solidified and/or cross-linked;
- FIG. 7 is a top down view of a polymeric material positioned on the substrate, shown in FIG. 1 , with an outer region of the polymeric material being solidified and/or cross-linked;
- FIG. 8 is a top down view of a polymeric material positioned on the substrate, shown in FIG. 1 , with a grating region of the polymeric material being solidified and/or cross-linked;
- FIG. 9 is a top down view of a polymeric material positioned on the substrate, shown in FIG. 1 , with isolated regions of the polymeric material being solidified and/or cross-linked;
- FIG. 10 is a top down view of a polymeric material positioned on the substrate, shown in FIG. 1 , with a scanning beam exposing portions of the polymeric material.
- a system 8 to form a relief pattern on a substrate 12 includes a stage 10 upon which substrate 12 is supported and a template 14 , having a mold 16 with a patterning surface 18 thereon.
- substrate 12 may be coupled to a substrate chuck (not shown), the substrate chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic.
- Template 14 and/or mold 16 may be formed from such materials including but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire.
- patterning surface 18 comprises features defined by a plurality of spaced-apart recesses 17 and protrusions 19 .
- patterning surface 18 may be substantially smooth and/or planar. Patterning surface 18 may define an original pattern that forms the basis of a pattern to be formed on substrate 12 .
- Template 14 may be coupled to an imprint head 20 to facilitate movement of template 14 , and therefore, mold 16 .
- template 14 may be coupled to a template chuck (not shown), the template chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic.
- a fluid dispense system 22 is coupled to be selectively placed in fluid communication with substrate 12 so as to deposit polymeric material 24 thereon. It should be understood that polymeric material 24 may be deposited using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like.
- a source 26 of energy 28 is coupled to direct energy 28 along a path 30 .
- Imprint head 20 and stage 10 are configured to arrange mold 16 and substrate 12 , respectively, to be in superimposition and disposed in path 30 . Either imprint head 20 , stage 10 , or both vary a distance between mold 16 and substrate 12 to define a desired volume therebetween that is filled by polymeric material 24 .
- polymeric material 24 is disposed upon substrate 12 before the desired volume is defined between mold 16 and substrate 12 .
- polymeric material 24 may fill the volume after the desired volume has been obtained.
- source 26 produces energy 28 , e.g., broadband ultraviolet radiation that causes polymeric material 24 to solidify and/or cross-link conforming to the shape of a surface 25 of substrate 12 and patterning surface 18 .
- Control of this process is regulated by processor 32 that is in data communication with stage 10 , imprint head 20 , fluid dispense system 22 , source 26 , operating on a computer readable program stored in memory 34 .
- mold 16 be substantially transparent to the wavelength of energy 28 so that the same may propagate therethrough. Additionally, to maximize a flux of energy 28 propagating through mold 16 , energy 28 may have a sufficient cross-section to cover the entire area of mold 16 with no obstructions being present in path 30 .
- a pattern generated by mold 16 is disposed upon a substrate 112 in which a preexisting pattern in present.
- a primer layer 36 is typically deposited upon patterned features, shown as recesses 38 and protrusions 40 , formed into substrate 112 to provide a smooth, if not planar, surface 42 upon which to form a patterned imprint layer (not shown) from polymeric material 24 disposed upon surface 42 .
- mold 16 and substrate 112 include alignment marks, which may include sub-portions of the patterned features.
- mold 16 may have alignment marks, referred to as mold alignment marks, which are defined by features 44 and 46 .
- Substrate 112 may include alignment marks, referred to as substrate alignment marks, which are defined by features 48 and 50 .
- Alignment system 53 typically obtains information parallel to path 30 . Alignment is then achieved manually by an operator or automatically using a vision system.
- source 26 produces energy 28 that causes polymeric material 24 to solidify and/or cross-link conforming to the shape of surface 25 of substrate 12 and patterning surface 18 .
- energy 28 that causes polymeric material 24 to solidify and/or cross-link conforming to the shape of surface 25 of substrate 12 and patterning surface 18 .
- a time required to complete solidification and/or cross-linking of polymeric material 24 may depend upon, inter alia, a magnitude of energy 28 impinging upon polymeric material 24 and chemical and/or optical properties of polymeric material 24 and/or substrate 12 .
- the magnitude of energy 28 required to solidify and/or cross-link polymeric material 24 may be substantially greater in imprint lithography processes as compared to optical lithography processes.
- energy 28 may impinge upon substrate 12 , template 14 , and mold 16 , and thus, heat substrate 12 , template 14 , and mold 16 .
- a substantially uniform magnitude of energy 28 may result in substantially uniform heating of substrate 12 , template 14 , and mold 16 .
- a differential magnitude of energy 28 and/or a differential CTE (coefficient of thermal expansion) associated with substrate 12 , template 14 , and mold 16 may result in misalignment between substrate 12 and mold 16 during solidification and/or cross-linking of polymeric material 24 , which may be undesirable.
- a method to minimize, if not prevent, thermal effects upon substrate 12 , template 14 , and mold 16 is described below.
- FIG. 3 a portion of system 8 is shown. More specifically, patterning surface 18 of mold 16 is shown in contact with polymeric layer 24 . Exposure of an entirety of surface 25 of substrate 12 to energy 28 may increase a temperature thereof, and thus, a linearly increase in size of substrate 12 , which may be undesirable. To that end, a portion of substrate 12 may be exposed to energy 28 , described below.
- substrate 12 having a plurality of regions a-p. As shown, substrate 12 comprises sixteen regions; however, substrate 12 may comprise any number of regions. To that end, to minimize, if not prevent, the aforementioned linearly increase in size of substrate 12 , a subset of the regions a-p of substrate 12 may be exposed to energy 28 , shown in FIG. 1 . More specifically, regions f, g, j, and k of substrate 12 may be exposed to energy 28 , with regions a-d, e, h, i, and l-p of substrate 12 being substantially absent of exposure to energy 28 .
- region a-d, e, h, i, and l-p of substrate 12 may minimize, if not prevent, region f, g, j, and k of substrate 12 from linearly increasing in size, i.e., region a-d, e, h, i, and l-p of substrate 12 may act as a physical constraint to prevent region f, g, j, and k of substrate 12 from increasing in size. Regions f, g, j, and k of substrate 12 may each be exposed to energy 28 sequentially or concurrently.
- regions a-d, e, h, i, and l-p of substrate 12 may be exposed to energy 28 to solidify and/or cross-link the same.
- all regions (a-p) of substrate 12 may be exposed to energy 28 , i.e., a blanket exposure to complete solidification and/or cross-linking of polymeric material 24 .
- an outer portion 62 of polymeric material 24 may be exposed to energy 28 prior to inner portion 64 of polymeric material 24 , with outer portion 62 of polymeric material 24 being solidified and/or cross-linked in response to energy 28 .
- outer portion 62 may maintain an interface between substrate 12 and mold 18 , and thus, minimize, if not prevent substrate 12 from increasing in size, as desired.
- inner portion 64 of polymeric material 24 may be subsequently exposed to energy 28 to solidify and/or cross-link the same.
- inner and outer portions 62 and 64 of polymeric material 24 may be exposed to energy 28 , i.e., a blanket exposure to complete solidification and/or cross-linking of polymeric material 24 .
- FIGS. 7-9 further examples are shown of exposing desired regions of polymeric material 24 to minimize, if not prevent, substrate 12 from increasing in size, as desired.
- FIG. 7 shows an outer region 66 being exposed to energy 28 , shown in FIG. 1 , prior to inner region 68 being exposed to energy 28 , shown in FIG. 1 .
- FIG. 8 shows a grating type exposure of polymeric material 24 , with region 70 being exposed to energy 28 , shown in FIG. 1 , prior to regions 72 being exposed to energy 28 , shown in FIG. 1 .
- FIG. 9 shows an isolated region exposure of polymeric material 24 , with regions 76 being exposed to energy 28 , shown in FIG. 1 , prior to region 7 is exposed to energy 28 , shown in FIG. 1 .
- energy 28 may have a cross-sectional area associated therewith that may be greater in dimension that a desired region that is to be exposed to energy 28 , i.e. a region a-p of substrate 12 , as shown in FIG. 4 .
- a mask (not shown) may be positioned within path 30 such that energy 28 may propagate therethrough and comprise dimensions commensurate with said desired regions of substrate 12 to expose the same to energy 28 . Further, the mask (not shown) may be removed from path 30 such that substantially all regions of substrate 12 are exposed to energy 28 .
- a first mask (not shown) may be positioned within path 30 such that energy 28 may propagate therethrough to expose a first subset of substrate 12 ; and a second mask (not shown) may be positioned within path 30 such that energy 28 may propagate therethrough to expose a second subset of substrate 12 .
- a desired subset of the plurality of regions a-p of substrate 12 may be processed to minimize, if not prevent, linearly increasing a size of substrate 12 [hereinafter small field].
- the above-mentioned methods may be applicable to imprinting of large substrates, i.e., whole wafer imprinting or display substrate imprinting [hereinafter large field]. More specifically, an overlay error associated with large fields may be greater that that as compared to an overlay error associated with small fields; however, an error tolerance associated with the large fields may be comparable or less than that associated with the small fields.
- substrate 12 and polymeric material 24 may be exposed to energy 28 , shown in FIG. 1 , employing a multi-ring type exposure to maintain a desired position between substrate 12 and mold 16 , similar to that as mentioned above with respect to FIGS. 3, 5 , and 6 . Portions of substrate 12 not previously exposed to energy 28 , shown in FIG. 1 , may be subsequently exposed to energy 28 to complete solidification and/or cross-linking of polymeric material 24 .
- energy 28 may comprise a scanning beam, as shown in FIG. 10 , such that desired regions of substrate 12 may be exposed to energy 28 . As shown, region 78 of substrate 12 is exposed to energy 28 prior to region 80 of substrate 12 is exposed to energy 28 .
- contact between mold 16 , shown in FIG. 1 , and polymeric material 24 and a path of the scanning beam may both travel across substrate 12 and polymeric material 28 in substantially the same direction.
- substrate 12 may be coupled to a substrate chuck (not shown). To that end, were the substrate chuck (not shown) able to absorb energy 28 , it may be desired to expose substrate 12 and polymeric material 24 to energy 24 having a reduced magnitude for a longer period of time as compared to the methods mentioned above. As a result, a thermal variation of substrate 12 may be minimized, if not prevented, as desired.
Abstract
The present invention is directed to a method that attenuates, if not avoids, heating of a substrate undergoing imprint lithography process and the deleterious effects associated therewith. To that end, the present invention includes a method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy in which a sub-portion of the field is exposed sufficient to cure the polymeric material is said sub-portion followed by a blanket exposure of all of the polymeric material associated with the entire field to cure/solidify the same.
Description
- The present application claims priority to U.S. Provisional Application No. 60/632,125, filed on Dec. 1, 2004, entitled “Methods of Exposure for the Purpose of Thermal Management for Imprint Lithography Processes,” listing Sidlgata V. Sreenivasan and Byung-Jin Choi as inventors, the entirety of which is incorporated herein by reference.
- The United States government has a paid-up license in this invention and the right in limited circumstance to require the patent owner to license other on reasonable terms as provided by the terms of 70NANB4H3012 awarded by National Institute of Standards (NIST) ATP Award.
- The field of the invention relates generally to nano-fabrication of structures. More particularly, the present invention is directed to a technique to achieve overlay alignment of patterns formed during nano-scale fabrication.
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nano-meters or smaller. One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. As the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled, “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
- The fundamental imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be positioned upon a motion stage to obtain a desired position to facilitate patterning thereof. To that end, a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate. The liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid. The template is then separated from the solidified layer such that the template and the substrate are spaced-apart. The substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer.
- A need exists, therefore, to provide improved alignment techniques for imprint lithographic processes.
- The present invention is directed to a method that attenuates, if not avoids, heating of a substrate undergoing imprint lithography process and the deleterious effects associated therewith. To that end, the present invention includes a method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy in which a sub-portion of the field is exposed sufficient to cure the polymeric material in said sub-portion followed by a blanket exposure of all of the polymeric material associated with the entire field to cure/solidify the same. These and other embodiments are discussed below.
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FIG. 1 is a simplified plan view of an imprint lithography system having a mold spaced-apart from a substrate; -
FIG. 2 is a cross-sectional view of a patterned substrate having a plurality of layers disposed thereon with a mold, shown inFIG. 1 , in superimposition therewith; -
FIG. 3 is a simplified side view of a portion of the system shown inFIG. 1 , with the mold in contact with a polymeric layer on the substrate; -
FIG. 4 is a top-down view of a portion of the substrate shown inFIG. 1 , the substrate having a plurality of regions associated therewith; -
FIGS. 5 and 6 are side views of portions of the mold and the polymeric layer, shown inFIG. 3 , with a portion of the polymeric layer solidified and/or cross-linked; -
FIG. 7 is a top down view of a polymeric material positioned on the substrate, shown inFIG. 1 , with an outer region of the polymeric material being solidified and/or cross-linked; -
FIG. 8 is a top down view of a polymeric material positioned on the substrate, shown inFIG. 1 , with a grating region of the polymeric material being solidified and/or cross-linked; -
FIG. 9 is a top down view of a polymeric material positioned on the substrate, shown inFIG. 1 , with isolated regions of the polymeric material being solidified and/or cross-linked; and -
FIG. 10 is a top down view of a polymeric material positioned on the substrate, shown inFIG. 1 , with a scanning beam exposing portions of the polymeric material. - Referring to
FIG. 1 , asystem 8 to form a relief pattern on asubstrate 12 includes astage 10 upon whichsubstrate 12 is supported and atemplate 14, having amold 16 with apatterning surface 18 thereon. In a further embodiment,substrate 12 may be coupled to a substrate chuck (not shown), the substrate chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic. -
Template 14 and/ormold 16 may be formed from such materials including but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire. As shown,patterning surface 18 comprises features defined by a plurality of spaced-apart recesses 17 and protrusions 19. However, in a further embodiment, patterningsurface 18 may be substantially smooth and/or planar.Patterning surface 18 may define an original pattern that forms the basis of a pattern to be formed onsubstrate 12. -
Template 14 may be coupled to animprint head 20 to facilitate movement oftemplate 14, and therefore,mold 16. In a further embodiment,template 14 may be coupled to a template chuck (not shown), the template chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic. Afluid dispense system 22 is coupled to be selectively placed in fluid communication withsubstrate 12 so as to depositpolymeric material 24 thereon. It should be understood thatpolymeric material 24 may be deposited using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like. - A
source 26 ofenergy 28 is coupled todirect energy 28 along apath 30.Imprint head 20 andstage 10 are configured to arrangemold 16 andsubstrate 12, respectively, to be in superimposition and disposed inpath 30. Eitherimprint head 20,stage 10, or both vary a distance betweenmold 16 andsubstrate 12 to define a desired volume therebetween that is filled bypolymeric material 24. - Typically,
polymeric material 24 is disposed uponsubstrate 12 before the desired volume is defined betweenmold 16 andsubstrate 12. However,polymeric material 24 may fill the volume after the desired volume has been obtained. After the desired volume is filled withpolymeric material 24,source 26 producesenergy 28, e.g., broadband ultraviolet radiation that causespolymeric material 24 to solidify and/or cross-link conforming to the shape of asurface 25 ofsubstrate 12 andpatterning surface 18. Control of this process is regulated byprocessor 32 that is in data communication withstage 10,imprint head 20,fluid dispense system 22,source 26, operating on a computer readable program stored inmemory 34. - To allow
energy 28 to impinge uponpolymeric material 24, it is desired thatmold 16 be substantially transparent to the wavelength ofenergy 28 so that the same may propagate therethrough. Additionally, to maximize a flux ofenergy 28 propagating throughmold 16,energy 28 may have a sufficient cross-section to cover the entire area ofmold 16 with no obstructions being present inpath 30. - Referring to
FIGS. 1 and 2 , often a pattern generated bymold 16 is disposed upon asubstrate 112 in which a preexisting pattern in present. To that end, aprimer layer 36 is typically deposited upon patterned features, shown asrecesses 38 andprotrusions 40, formed intosubstrate 112 to provide a smooth, if not planar,surface 42 upon which to form a patterned imprint layer (not shown) frompolymeric material 24 disposed uponsurface 42. To that end,mold 16 andsubstrate 112 include alignment marks, which may include sub-portions of the patterned features. For example,mold 16 may have alignment marks, referred to as mold alignment marks, which are defined byfeatures Substrate 112 may include alignment marks, referred to as substrate alignment marks, which are defined byfeatures - To ensure proper alignment between the pattern on
substrate 112 with the pattern generated bymold 16, it is desired to ensure proper alignment between the mold and substrate alignment marks. This has typically been achieved employing the aided eye, e.g., analignment system 53 selectively placed in optical communication with bothmold 16 andsubstrate 12, concurrently. Exemplary alignment systems have included ocular microscopes or other imaging systems.Alignment system 53 typically obtains information parallel topath 30. Alignment is then achieved manually by an operator or automatically using a vision system. - Referring to
FIG. 1 , as mentioned above,source 26 producesenergy 28 that causespolymeric material 24 to solidify and/or cross-link conforming to the shape ofsurface 25 ofsubstrate 12 andpatterning surface 18. To that end, often it is desired to complete solidification and/or cross-linking ofpolymeric material 24 prior to separation ofmold 16 frompolymeric material 24. A time required to complete solidification and/or cross-linking ofpolymeric material 24 may depend upon, inter alia, a magnitude ofenergy 28 impinging uponpolymeric material 24 and chemical and/or optical properties ofpolymeric material 24 and/orsubstrate 12. To that end, in the absence of any amplifying agents, i.e., chemically-amplified photoresist of optical lithography progresses, the magnitude ofenergy 28 required to solidify and/or cross-linkpolymeric material 24 may be substantially greater in imprint lithography processes as compared to optical lithography processes. As a result, during solidification and cross-linking ofpolymeric material 24,energy 28 may impinge uponsubstrate 12,template 14, andmold 16, and thus,heat substrate 12,template 14, andmold 16. A substantially uniform magnitude ofenergy 28 may result in substantially uniform heating ofsubstrate 12,template 14, andmold 16. However, a differential magnitude ofenergy 28 and/or a differential CTE (coefficient of thermal expansion) associated withsubstrate 12,template 14, andmold 16 may result in misalignment betweensubstrate 12 andmold 16 during solidification and/or cross-linking ofpolymeric material 24, which may be undesirable. To that end, a method to minimize, if not prevent, thermal effects uponsubstrate 12,template 14, andmold 16 is described below. - Referring to
FIG. 3 , a portion ofsystem 8 is shown. More specifically, patterningsurface 18 ofmold 16 is shown in contact withpolymeric layer 24. Exposure of an entirety ofsurface 25 ofsubstrate 12 toenergy 28 may increase a temperature thereof, and thus, a linearly increase in size ofsubstrate 12, which may be undesirable. To that end, a portion ofsubstrate 12 may be exposed toenergy 28, described below. - Referring to
FIG. 4 , a portion ofsubstrate 12 is shown having a plurality of regions a-p. As shown,substrate 12 comprises sixteen regions; however,substrate 12 may comprise any number of regions. To that end, to minimize, if not prevent, the aforementioned linearly increase in size ofsubstrate 12, a subset of the regions a-p ofsubstrate 12 may be exposed toenergy 28, shown inFIG. 1 . More specifically, regions f, g, j, and k ofsubstrate 12 may be exposed toenergy 28, with regions a-d, e, h, i, and l-p ofsubstrate 12 being substantially absent of exposure toenergy 28. As a result, region a-d, e, h, i, and l-p ofsubstrate 12 may minimize, if not prevent, region f, g, j, and k ofsubstrate 12 from linearly increasing in size, i.e., region a-d, e, h, i, and l-p ofsubstrate 12 may act as a physical constraint to prevent region f, g, j, and k ofsubstrate 12 from increasing in size. Regions f, g, j, and k ofsubstrate 12 may each be exposed toenergy 28 sequentially or concurrently. - To that end, after exposure of regions f, g, j, and k of
substrate 12 toenergy 28, in a first embodiment, regions a-d, e, h, i, and l-p ofsubstrate 12 may be exposed toenergy 28 to solidify and/or cross-link the same. In a further embodiment, after exposure of regions f, g, j, and k ofsubstrate 12 toenergy 28, all regions (a-p) ofsubstrate 12 may be exposed toenergy 28, i.e., a blanket exposure to complete solidification and/or cross-linking ofpolymeric material 24. - Referring to
FIG. 3 , in a further embodiment, it may be desired to expose a portion ofsubstrate 12, and therefore,polymeric material 24, toenergy 28 such that a position betweensubstrate 12 andmold 16 prior to exposure toenergy 28 is substantially the same as a position betweensubstrate 12 andmold 16 subsequent to exposure ofenergy 28. More specifically, an interface betweensubstrate 12 andmold 16 viapolymeric material 24 may be maintained before and after exposure ofsubstrate 12,mold 16, andpolymeric material 24 toenergy 28. As a result, an increase in size ofsubstrate 12,template 14, andmold 16 resulting from thermal-induced scaling may be minimized, if not prevented. - Referring to
FIGS. 3, 5 , and 6, in a first example of the above-mentioned, anouter portion 62 ofpolymeric material 24 may be exposed toenergy 28 prior toinner portion 64 ofpolymeric material 24, withouter portion 62 ofpolymeric material 24 being solidified and/or cross-linked in response toenergy 28. As a result,outer portion 62 may maintain an interface betweensubstrate 12 andmold 18, and thus, minimize, if not preventsubstrate 12 from increasing in size, as desired. In a further embodiment, after exposure ofouter portion 62 ofpolymeric material 24 toenergy 28,inner portion 64 ofpolymeric material 24 may be subsequently exposed toenergy 28 to solidify and/or cross-link the same. In still a further embodiment, after exposure ofouter portion 62 ofpolymeric material 24 toenergy 28, inner andouter portions polymeric material 24 may be exposed toenergy 28, i.e., a blanket exposure to complete solidification and/or cross-linking ofpolymeric material 24. - Referring to
FIGS. 7-9 , further examples are shown of exposing desired regions ofpolymeric material 24 to minimize, if not prevent,substrate 12 from increasing in size, as desired.FIG. 7 shows anouter region 66 being exposed toenergy 28, shown inFIG. 1 , prior toinner region 68 being exposed toenergy 28, shown inFIG. 1 .FIG. 8 shows a grating type exposure ofpolymeric material 24, withregion 70 being exposed toenergy 28, shown inFIG. 1 , prior toregions 72 being exposed toenergy 28, shown inFIG. 1 .FIG. 9 shows an isolated region exposure ofpolymeric material 24, withregions 76 being exposed toenergy 28, shown inFIG. 1 , prior to region 7 is exposed toenergy 28, shown inFIG. 1 . - Referring to
FIG. 1 ,energy 28 may have a cross-sectional area associated therewith that may be greater in dimension that a desired region that is to be exposed toenergy 28, i.e. a region a-p ofsubstrate 12, as shown inFIG. 4 . To that end, to expose desired regions ofsubstrate 12 toenergy 28, a mask (not shown) may be positioned withinpath 30 such thatenergy 28 may propagate therethrough and comprise dimensions commensurate with said desired regions ofsubstrate 12 to expose the same toenergy 28. Further, the mask (not shown) may be removed frompath 30 such that substantially all regions ofsubstrate 12 are exposed toenergy 28. In a further embodiment, analogous to the above-mentioned, a first mask (not shown) may be positioned withinpath 30 such thatenergy 28 may propagate therethrough to expose a first subset ofsubstrate 12; and a second mask (not shown) may be positioned withinpath 30 such thatenergy 28 may propagate therethrough to expose a second subset ofsubstrate 12. - Furthermore, as described with respect to
FIG. 4 , a desired subset of the plurality of regions a-p ofsubstrate 12 may be processed to minimize, if not prevent, linearly increasing a size of substrate 12 [hereinafter small field]. However, the above-mentioned methods may be applicable to imprinting of large substrates, i.e., whole wafer imprinting or display substrate imprinting [hereinafter large field]. More specifically, an overlay error associated with large fields may be greater that that as compared to an overlay error associated with small fields; however, an error tolerance associated with the large fields may be comparable or less than that associated with the small fields. In an example of minimizing a size increase ofsubstrate 12 employing imprinting of large substrates,substrate 12 andpolymeric material 24 may be exposed toenergy 28, shown inFIG. 1 , employing a multi-ring type exposure to maintain a desired position betweensubstrate 12 andmold 16, similar to that as mentioned above with respect toFIGS. 3, 5 , and 6. Portions ofsubstrate 12 not previously exposed toenergy 28, shown inFIG. 1 , may be subsequently exposed toenergy 28 to complete solidification and/or cross-linking ofpolymeric material 24. - In a further embodiment,
energy 28 may comprise a scanning beam, as shown inFIG. 10 , such that desired regions ofsubstrate 12 may be exposed toenergy 28. As shown,region 78 ofsubstrate 12 is exposed toenergy 28 prior toregion 80 ofsubstrate 12 is exposed toenergy 28. In still a further embodiment, contact betweenmold 16, shown inFIG. 1 , andpolymeric material 24 and a path of the scanning beam may both travel acrosssubstrate 12 andpolymeric material 28 in substantially the same direction. - Referring to
FIG. 1 , in still a further embodiment, as mentioned abovesubstrate 12 may be coupled to a substrate chuck (not shown). To that end, were the substrate chuck (not shown) able to absorbenergy 28, it may be desired to exposesubstrate 12 andpolymeric material 24 toenergy 24 having a reduced magnitude for a longer period of time as compared to the methods mentioned above. As a result, a thermal variation ofsubstrate 12 may be minimized, if not prevented, as desired. - The embodiments of the present invention described above are exemplary. Many changes and modifications may be made to the disclosure recited above, while remaining within the scope of the invention. Therefore, the scope of the invention should not be limited by the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
Claims (18)
1. A method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy:
exposing a sub-portion of said field to said actinic energy; and
exposing all of said field to said actinic radiation, whereby overlay misalignment due to heating of said substrate by said actinic radiation is reduced.
2. The method as recited in claim 1 wherein exposing all further includes exposing, concurrently, all of said field to said actinic radiation.
3. The method as recited in claim 1 wherein said substrate is a semiconductor wafer and said field is coextensive with an entire area of one side of said wafer.
4. The method as recited in claim 1 wherein said substrate is a semiconductor wafer and said field is a sub-part of an entire area of one side of said wafer.
5. The method as recited in claim 1 wherein exposing said sub-portion further includes propagating a flux of said actinic radiation along a path, with said flux having a cross-section that is greater in dimensions than said sub-portion and further including placing a spatial filter in said path to reduce said flux, impinging upon said region, to dimensions commensurate with said sub-portion.
6. The method as recited in claim 1 wherein exposing said sub-portion further includes propagating a flux of said actinic radiation along a path, with said flux having a cross-section that is greater in dimensions than said sub-portion and further including placing a spatial filter in said path to reduce said flux, impinging upon said region, to dimensions commensurate with said sub-portion, with exposing all of said field further including removing said spatial filter from said path.
7. The method of claim 1 further including transferring thermal energy, accumulating in said substrate, away from said substrate by placing said substrate in thermal communication with a support.
8. A method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy:
exposing a first sub-portion of said field to said actinic energy; and
exposing a second sub-portion of said field to said actinic radiation, with regions of said field associated with said first sub-portion differing from the regions of said field associated with said second-sub-portion to reduce overlay misalignment due to heating of said substrate by said actinic radiation.
9. The method as recited in claim 8 further including establishing said first and second sub-portions so that aggregate dimensions thereof are coextensive with said field.
10. The method as recited in claim 8 wherein said substrate is a semiconductor wafer and said field is coextensive with an entire area of one side of said wafer.
11. The method as recited in claim 8 wherein said substrate is a semiconductor wafer and said field is a sub-part of an entire area of one side of said wafer.
12. The method as recited in claim 8 further including establishing said first and second sub-portions so that aggregate dimensions thereof are coextensive with said field, propagating a flux of said actinic radiation along a path, with said flux having a cross-section that is greater than said field, wherein exposing said first sub-portion further includes placing a first spatial filter in said path to reduce said flux, impinging upon said region, to dimensions commensurate with said first sub-portion and exposing said second sub-portion further includes placing a second spatial filter in said path to reduce said flux, impinging upon said region, to dimensions commensurate with said second sub-portion.
13. The method as recited in claim 8 further including establishing said first and second sub-portions so that aggregate dimensions thereof are coextensive with said field, propagating a flux of said actinic radiation along a path, with said flux having a cross-section that is coextensive with said field, wherein exposing said first sub-portion further includes placing a first spatial filter in said path to reduce said flux, impinging upon said region, to dimensions commensurate with said first sub-portion and exposing said second sub-portion further includes placing a second spatial filter in said path to reduce said flux, impinging upon said region, to dimensions commensurate with said second sub-portion.
14. The method of claim 8 further including transferring thermal energy, accumulating in said substrate, away from said substrate by placing said substrate in thermal communication with a support.
15. A method of patterning a field of a substrate with a polymeric material that solidifies in response to actinic energy:
sequentially exposing a sub-portion of a plurality of sub-portions of said field to said actinic energy until an entire area of said field has been exposed to said actinic radiation, whereby overlay misalignment due to heating of said substrate by said actinic radiation is reduced.
16. The method as recited in claim 15 wherein each of said plurality of sub-portions include a plurality of sub-regions, with the sequentially exposing further including sequentially exposing said plurality of sub-regions to said actinic radiation.
17. The method as recited in claim 15 wherein said plurality of said sub-portions are exposed to actinic radiation concurrently.
18. The method of claim 15 further including transferring thermal energy, accumulating in said substrate, away from said substrate by placing said substrate in thermal communication with a support.
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US12/047,572 US8609326B2 (en) | 2004-02-18 | 2008-03-13 | Methods for exposure for the purpose of thermal management for imprint lithography processes |
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US10/781,278 Continuation US20040163563A1 (en) | 2000-07-16 | 2004-02-18 | Imprint lithography template having a mold to compensate for material changes of an underlying liquid |
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US20090026657A1 (en) * | 2007-07-20 | 2009-01-29 | Molecular Imprints, Inc. | Alignment System and Method for a Substrate in a Nano-Imprint Process |
US20090115110A1 (en) * | 2007-11-02 | 2009-05-07 | Molecular Imprints, Inc. | Drop Pattern Generation for Imprint Lithography |
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US20090169662A1 (en) * | 2004-11-30 | 2009-07-02 | Molecular Imprints, Inc. | Enhanced Multi Channel Alignment |
US20090200710A1 (en) * | 2008-02-08 | 2009-08-13 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US20090213778A1 (en) * | 2008-01-14 | 2009-08-27 | Zhifeng Tao | Fragmentation and Packing for Wireless Multi-User Multi-Hop Relay Networks |
US20090243153A1 (en) * | 2008-04-01 | 2009-10-01 | Molecular Imprints, Inc. | Large Area Roll-To-Roll Imprint Lithography |
US7670529B2 (en) | 2005-12-08 | 2010-03-02 | Molecular Imprints, Inc. | Method and system for double-sided patterning of substrates |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
US7691313B2 (en) | 2002-11-13 | 2010-04-06 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
US20100098859A1 (en) * | 2008-10-21 | 2010-04-22 | Molecular Imprints, Inc. | Drop Pattern Generation with Edge Weighting |
US20100102487A1 (en) * | 2008-10-28 | 2010-04-29 | Molecular Imprints, Inc. | Optical System for Use in Stage Control |
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US7880872B2 (en) | 2004-11-30 | 2011-02-01 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
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Citations (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3783520A (en) * | 1970-09-28 | 1974-01-08 | Bell Telephone Labor Inc | High accuracy alignment procedure utilizing moire patterns |
US4326805A (en) * | 1980-04-11 | 1982-04-27 | Bell Telephone Laboratories, Incorporated | Method and apparatus for aligning mask and wafer members |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
US4600309A (en) * | 1982-12-30 | 1986-07-15 | Thomson-Csf | Process and apparatus for theoptical alignment of patterns in two close-up planes in an exposure means incorporating a divergent radiation source |
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US4848911A (en) * | 1986-06-11 | 1989-07-18 | Kabushiki Kaisha Toshiba | Method for aligning first and second objects, relative to each other, and apparatus for practicing this method |
US4929083A (en) * | 1986-06-19 | 1990-05-29 | Xerox Corporation | Focus and overlay characterization and optimization for photolithographic exposure |
US5028366A (en) * | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
US5072126A (en) * | 1990-10-31 | 1991-12-10 | International Business Machines Corporation | Promixity alignment using polarized illumination and double conjugate projection lens |
US5074667A (en) * | 1988-08-15 | 1991-12-24 | Sumitomo Heavy Industries Co. Ltd. | Position detector employing a sector fresnel zone plate |
US5148036A (en) * | 1989-07-18 | 1992-09-15 | Canon Kabushiki Kaisha | Multi-axis wafer position detecting system using a mark having optical power |
US5148037A (en) * | 1988-09-09 | 1992-09-15 | Canon Kabushiki Kaisha | Position detecting method and apparatus |
US5204739A (en) * | 1992-02-07 | 1993-04-20 | Karl Suss America, Inc. | Proximity mask alignment using a stored video image |
US5218193A (en) * | 1991-02-16 | 1993-06-08 | Sumitomo Heavy Industries Co., Ltd. | Double-focus measurement apparatus utilizing chromatic aberration by having first and second bodies illuminated respectively by a single wavelength ray and a ray having a plurality of wavelengths |
US5259926A (en) * | 1991-09-24 | 1993-11-09 | Hitachi, Ltd. | Method of manufacturing a thin-film pattern on a substrate |
US5331371A (en) * | 1990-09-26 | 1994-07-19 | Canon Kabushiki Kaisha | Alignment and exposure method |
US5355219A (en) * | 1992-12-18 | 1994-10-11 | Matsushita Electric Industrial Co., Ltd. | Gap control apparatus and method utilizing heterodyne signal phase difference detection |
US5414514A (en) * | 1993-06-01 | 1995-05-09 | Massachusetts Institute Of Technology | On-axis interferometric alignment of plates using the spatial phase of interference patterns |
US5425848A (en) * | 1993-03-16 | 1995-06-20 | U.S. Philips Corporation | Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method |
US5452090A (en) * | 1992-04-29 | 1995-09-19 | International Business Machines Corporation | CCD based confocal filtering for improved accuracy in x-ray proximity alignment |
US5477058A (en) * | 1994-11-09 | 1995-12-19 | Kabushiki Kaisha Toshiba | Attenuated phase-shifting mask with opaque reticle alignment marks |
US5504793A (en) * | 1995-02-17 | 1996-04-02 | Loral Federal Systems Company | Magnification correction for 1-X proximity X-Ray lithography |
US5508527A (en) * | 1992-01-31 | 1996-04-16 | Canon Kabushiki Kaisha | Method of detecting positional displacement between mask and wafer, and exposure apparatus adopting the method |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US5545367A (en) * | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5601641A (en) * | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5633505A (en) * | 1995-09-29 | 1997-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor wafer incorporating marks for inspecting first layer overlay shift in global alignment process |
US5669303A (en) * | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US5737064A (en) * | 1994-03-15 | 1998-04-07 | Matsushita Electric Industrial Co., Ltd. | Exposure apparatus for transferring a mask pattern onto a substrate |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US5776748A (en) * | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
US5820769A (en) * | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5849209A (en) * | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US5877036A (en) * | 1996-02-29 | 1999-03-02 | Nec Corporation | Overlay measuring method using correlation function |
US5877861A (en) * | 1997-11-14 | 1999-03-02 | International Business Machines Corporation | Method for overlay control system |
US5948470A (en) * | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US6049373A (en) * | 1997-02-28 | 2000-04-11 | Sumitomo Heavy Industries, Ltd. | Position detection technique applied to proximity exposure |
US6150231A (en) * | 1998-06-15 | 2000-11-21 | Siemens Aktiengesellschaft | Overlay measurement technique using moire patterns |
US6153886A (en) * | 1993-02-19 | 2000-11-28 | Nikon Corporation | Alignment apparatus in projection exposure apparatus |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6355198B1 (en) * | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
US20020042027A1 (en) * | 1998-10-09 | 2002-04-11 | Chou Stephen Y. | Microscale patterning and articles formed thereby |
US6383888B1 (en) * | 2001-04-18 | 2002-05-07 | Advanced Micro Devices, Inc. | Method and apparatus for selecting wafer alignment marks based on film thickness variation |
US6388755B1 (en) * | 1998-12-03 | 2002-05-14 | Advanced Optical Technologies, Inc. | Wireless position and orientation detecting system |
US6391217B2 (en) * | 1999-12-23 | 2002-05-21 | University Of Massachusetts | Methods and apparatus for forming submicron patterns on films |
US6420892B1 (en) * | 1998-05-26 | 2002-07-16 | Micron Technology, Inc. | Calibration target for calibrating semiconductor wafer test systems |
US20020098426A1 (en) * | 2000-07-16 | 2002-07-25 | Sreenivasan S. V. | High-resolution overlay alignment methods and systems for imprint lithography |
US20020132482A1 (en) * | 2000-07-18 | 2002-09-19 | Chou Stephen Y. | Fluid pressure imprint lithography |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6518189B1 (en) * | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US6522411B1 (en) * | 1999-05-25 | 2003-02-18 | Massachusetts Institute Of Technology | Optical gap measuring apparatus and method having two-dimensional grating mark with chirp in one direction |
US20030062334A1 (en) * | 2001-09-25 | 2003-04-03 | Lee Hong Hie | Method for forming a micro-pattern on a substrate by using capillary force |
US20030080472A1 (en) * | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method with bonded release layer for molding small patterns |
US20030081193A1 (en) * | 2001-06-01 | 2003-05-01 | White Donald L. | Holder, system, and process for improving overlay in lithography |
US6580172B2 (en) * | 2001-03-02 | 2003-06-17 | Motorola, Inc. | Lithographic template and method of formation and use |
US6630410B2 (en) * | 2000-08-31 | 2003-10-07 | Micron Technology, Inc. | Self-aligned PECVD etch mask |
US6636311B1 (en) * | 1998-12-01 | 2003-10-21 | Canon Kabushiki Kaisha | Alignment method and exposure apparatus using the same |
US6646662B1 (en) * | 1998-05-26 | 2003-11-11 | Seiko Epson Corporation | Patterning method, patterning apparatus, patterning template, and method for manufacturing the patterning template |
US20040021866A1 (en) * | 2002-08-01 | 2004-02-05 | Watts Michael P.C. | Scatterometry alignment for imprint lithography |
US20040022888A1 (en) * | 2002-08-01 | 2004-02-05 | Sreenivasan Sidlgata V. | Alignment systems for imprint lithography |
US20040033515A1 (en) * | 2002-04-16 | 2004-02-19 | Han Cao | Gradient structures interfacing microfluidics and nanofluidics, methods for fabrication and uses thereof |
US6696220B2 (en) * | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
US20040036201A1 (en) * | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
US20040046288A1 (en) * | 2000-07-18 | 2004-03-11 | Chou Stephen Y. | Laset assisted direct imprint lithography |
US20040110856A1 (en) * | 2002-12-04 | 2004-06-10 | Young Jung Gun | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US20040124566A1 (en) * | 2002-07-11 | 2004-07-01 | Sreenivasan Sidlgata V. | Step and repeat imprint lithography processes |
US20040131718A1 (en) * | 2000-07-18 | 2004-07-08 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
US20040137734A1 (en) * | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US20040156108A1 (en) * | 2001-10-29 | 2004-08-12 | Chou Stephen Y. | Articles comprising nanoscale patterns with reduced edge roughness and methods of making same |
US6776094B1 (en) * | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US6791669B2 (en) * | 2001-04-12 | 2004-09-14 | Nikon Corporation | Positioning device and exposure apparatus including the same |
US20040192041A1 (en) * | 2003-03-27 | 2004-09-30 | Jun-Ho Jeong | UV nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization |
US20040197843A1 (en) * | 2001-07-25 | 2004-10-07 | Chou Stephen Y. | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
US6819426B2 (en) * | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US20050037143A1 (en) * | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
US20050051742A1 (en) * | 1995-02-01 | 2005-03-10 | Nikon Corporation | Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus |
US6900881B2 (en) * | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US6916584B2 (en) * | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US20060019183A1 (en) * | 2004-07-20 | 2006-01-26 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55118633A (en) * | 1979-03-05 | 1980-09-11 | Fujitsu Ltd | Exposing method for electron beam |
JPS58106828A (en) * | 1981-12-18 | 1983-06-25 | Fujitsu Ltd | Electron beam exposure method |
JPH0622197B2 (en) * | 1983-05-13 | 1994-03-23 | 株式会社日立製作所 | Drawing method and device |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
AU2003261317A1 (en) * | 2002-08-01 | 2004-02-23 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6929762B2 (en) * | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
US7365103B2 (en) | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US7070406B2 (en) * | 2003-04-29 | 2006-07-04 | Hewlett-Packard Development Company, L.P. | Apparatus for embossing a flexible substrate with a pattern carried by an optically transparent compliant media |
US7630067B2 (en) * | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
JP5198071B2 (en) * | 2004-12-01 | 2013-05-15 | モレキュラー・インプリンツ・インコーポレーテッド | Exposure method for thermal management in imprint lithography process |
US7391503B2 (en) * | 2005-10-04 | 2008-06-24 | Asml Netherlands B.V. | System and method for compensating for thermal expansion of lithography apparatus or substrate |
-
2005
- 2005-11-30 JP JP2007544581A patent/JP5198071B2/en active Active
- 2005-11-30 KR KR1020077014800A patent/KR20070086766A/en not_active Application Discontinuation
- 2005-11-30 WO PCT/US2005/043872 patent/WO2006060758A2/en active Application Filing
- 2005-11-30 US US11/292,402 patent/US20060115999A1/en not_active Abandoned
- 2005-11-30 EP EP05852934A patent/EP1825502A4/en not_active Withdrawn
- 2005-12-01 TW TW094142252A patent/TW200627082A/en unknown
-
2008
- 2008-03-13 US US12/047,572 patent/US8609326B2/en active Active
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3783520A (en) * | 1970-09-28 | 1974-01-08 | Bell Telephone Labor Inc | High accuracy alignment procedure utilizing moire patterns |
US4326805A (en) * | 1980-04-11 | 1982-04-27 | Bell Telephone Laboratories, Incorporated | Method and apparatus for aligning mask and wafer members |
US4600309A (en) * | 1982-12-30 | 1986-07-15 | Thomson-Csf | Process and apparatus for theoptical alignment of patterns in two close-up planes in an exposure means incorporating a divergent radiation source |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
US4848911A (en) * | 1986-06-11 | 1989-07-18 | Kabushiki Kaisha Toshiba | Method for aligning first and second objects, relative to each other, and apparatus for practicing this method |
US4929083A (en) * | 1986-06-19 | 1990-05-29 | Xerox Corporation | Focus and overlay characterization and optimization for photolithographic exposure |
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5028366A (en) * | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
US5074667A (en) * | 1988-08-15 | 1991-12-24 | Sumitomo Heavy Industries Co. Ltd. | Position detector employing a sector fresnel zone plate |
US5148037A (en) * | 1988-09-09 | 1992-09-15 | Canon Kabushiki Kaisha | Position detecting method and apparatus |
US5148036A (en) * | 1989-07-18 | 1992-09-15 | Canon Kabushiki Kaisha | Multi-axis wafer position detecting system using a mark having optical power |
US5331371A (en) * | 1990-09-26 | 1994-07-19 | Canon Kabushiki Kaisha | Alignment and exposure method |
US5072126A (en) * | 1990-10-31 | 1991-12-10 | International Business Machines Corporation | Promixity alignment using polarized illumination and double conjugate projection lens |
US5218193A (en) * | 1991-02-16 | 1993-06-08 | Sumitomo Heavy Industries Co., Ltd. | Double-focus measurement apparatus utilizing chromatic aberration by having first and second bodies illuminated respectively by a single wavelength ray and a ray having a plurality of wavelengths |
US5259926A (en) * | 1991-09-24 | 1993-11-09 | Hitachi, Ltd. | Method of manufacturing a thin-film pattern on a substrate |
US5508527A (en) * | 1992-01-31 | 1996-04-16 | Canon Kabushiki Kaisha | Method of detecting positional displacement between mask and wafer, and exposure apparatus adopting the method |
US5204739A (en) * | 1992-02-07 | 1993-04-20 | Karl Suss America, Inc. | Proximity mask alignment using a stored video image |
US5545367A (en) * | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5452090A (en) * | 1992-04-29 | 1995-09-19 | International Business Machines Corporation | CCD based confocal filtering for improved accuracy in x-ray proximity alignment |
US5601641A (en) * | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5355219A (en) * | 1992-12-18 | 1994-10-11 | Matsushita Electric Industrial Co., Ltd. | Gap control apparatus and method utilizing heterodyne signal phase difference detection |
US6153886A (en) * | 1993-02-19 | 2000-11-28 | Nikon Corporation | Alignment apparatus in projection exposure apparatus |
US5425848A (en) * | 1993-03-16 | 1995-06-20 | U.S. Philips Corporation | Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method |
US5414514A (en) * | 1993-06-01 | 1995-05-09 | Massachusetts Institute Of Technology | On-axis interferometric alignment of plates using the spatial phase of interference patterns |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US6776094B1 (en) * | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US5776748A (en) * | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US5737064A (en) * | 1994-03-15 | 1998-04-07 | Matsushita Electric Industrial Co., Ltd. | Exposure apparatus for transferring a mask pattern onto a substrate |
US5477058A (en) * | 1994-11-09 | 1995-12-19 | Kabushiki Kaisha Toshiba | Attenuated phase-shifting mask with opaque reticle alignment marks |
US20050051742A1 (en) * | 1995-02-01 | 2005-03-10 | Nikon Corporation | Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus |
US5504793A (en) * | 1995-02-17 | 1996-04-02 | Loral Federal Systems Company | Magnification correction for 1-X proximity X-Ray lithography |
US5849209A (en) * | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US5956216A (en) * | 1995-05-24 | 1999-09-21 | Regents Of The University Of Minnesota | Magnetic storage having discrete elements with quantized magnetic moments |
US5820769A (en) * | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
US6088103A (en) * | 1995-05-31 | 2000-07-11 | Massachusetts Institute Of Technology | Optical interference alignment and gapping apparatus |
US5633505A (en) * | 1995-09-29 | 1997-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor wafer incorporating marks for inspecting first layer overlay shift in global alignment process |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6518189B1 (en) * | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US20040137734A1 (en) * | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US6809356B2 (en) * | 1995-11-15 | 2004-10-26 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US6309580B1 (en) * | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US5877036A (en) * | 1996-02-29 | 1999-03-02 | Nec Corporation | Overlay measuring method using correlation function |
US5669303A (en) * | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US6355198B1 (en) * | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
US6285439B1 (en) * | 1997-02-28 | 2001-09-04 | Sumitomo Heavy Industries, Ltd. | Position detection technique applied to proximity exposure |
US6295120B1 (en) * | 1997-02-28 | 2001-09-25 | Sumitomo Heavy Industries, Ltd. | Position detection technique applied to proximity exposure |
US6049373A (en) * | 1997-02-28 | 2000-04-11 | Sumitomo Heavy Industries, Ltd. | Position detection technique applied to proximity exposure |
US5948470A (en) * | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US5877861A (en) * | 1997-11-14 | 1999-03-02 | International Business Machines Corporation | Method for overlay control system |
US6646662B1 (en) * | 1998-05-26 | 2003-11-11 | Seiko Epson Corporation | Patterning method, patterning apparatus, patterning template, and method for manufacturing the patterning template |
US6420892B1 (en) * | 1998-05-26 | 2002-07-16 | Micron Technology, Inc. | Calibration target for calibrating semiconductor wafer test systems |
US6150231A (en) * | 1998-06-15 | 2000-11-21 | Siemens Aktiengesellschaft | Overlay measurement technique using moire patterns |
US20020167117A1 (en) * | 1998-06-30 | 2002-11-14 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US20030034329A1 (en) * | 1998-06-30 | 2003-02-20 | Chou Stephen Y. | Lithographic method for molding pattern with nanoscale depth |
US20020042027A1 (en) * | 1998-10-09 | 2002-04-11 | Chou Stephen Y. | Microscale patterning and articles formed thereby |
US20040118809A1 (en) * | 1998-10-09 | 2004-06-24 | Chou Stephen Y. | Microscale patterning and articles formed thereby |
US6713238B1 (en) * | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6636311B1 (en) * | 1998-12-01 | 2003-10-21 | Canon Kabushiki Kaisha | Alignment method and exposure apparatus using the same |
US6388755B1 (en) * | 1998-12-03 | 2002-05-14 | Advanced Optical Technologies, Inc. | Wireless position and orientation detecting system |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6522411B1 (en) * | 1999-05-25 | 2003-02-18 | Massachusetts Institute Of Technology | Optical gap measuring apparatus and method having two-dimensional grating mark with chirp in one direction |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6391217B2 (en) * | 1999-12-23 | 2002-05-21 | University Of Massachusetts | Methods and apparatus for forming submicron patterns on films |
US20040189994A1 (en) * | 2000-07-16 | 2004-09-30 | Board Of Regents, The University Of Texas System | Method of determining alignment of a template and a substrate having a liquid disposed therebetween |
US20040209177A1 (en) * | 2000-07-16 | 2004-10-21 | Board Of Regents, The University Of Texas System | Dual wavelength method of determining a relative position of a substrate and a template |
US20020098426A1 (en) * | 2000-07-16 | 2002-07-25 | Sreenivasan S. V. | High-resolution overlay alignment methods and systems for imprint lithography |
US20040131718A1 (en) * | 2000-07-18 | 2004-07-08 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
US20020177319A1 (en) * | 2000-07-18 | 2002-11-28 | Chou Stephen Y. | Fluid pressure bonding |
US20050037143A1 (en) * | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
US20020132482A1 (en) * | 2000-07-18 | 2002-09-19 | Chou Stephen Y. | Fluid pressure imprint lithography |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US20040036201A1 (en) * | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
US20040046288A1 (en) * | 2000-07-18 | 2004-03-11 | Chou Stephen Y. | Laset assisted direct imprint lithography |
US6630410B2 (en) * | 2000-08-31 | 2003-10-07 | Micron Technology, Inc. | Self-aligned PECVD etch mask |
US6696220B2 (en) * | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
US6819426B2 (en) * | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
US6580172B2 (en) * | 2001-03-02 | 2003-06-17 | Motorola, Inc. | Lithographic template and method of formation and use |
US6791669B2 (en) * | 2001-04-12 | 2004-09-14 | Nikon Corporation | Positioning device and exposure apparatus including the same |
US6383888B1 (en) * | 2001-04-18 | 2002-05-07 | Advanced Micro Devices, Inc. | Method and apparatus for selecting wafer alignment marks based on film thickness variation |
US20030081193A1 (en) * | 2001-06-01 | 2003-05-01 | White Donald L. | Holder, system, and process for improving overlay in lithography |
US20040197843A1 (en) * | 2001-07-25 | 2004-10-07 | Chou Stephen Y. | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
US20030062334A1 (en) * | 2001-09-25 | 2003-04-03 | Lee Hong Hie | Method for forming a micro-pattern on a substrate by using capillary force |
US20030080471A1 (en) * | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method for molding pattern with nanoscale features |
US20030080472A1 (en) * | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method with bonded release layer for molding small patterns |
US20040156108A1 (en) * | 2001-10-29 | 2004-08-12 | Chou Stephen Y. | Articles comprising nanoscale patterns with reduced edge roughness and methods of making same |
US20040033515A1 (en) * | 2002-04-16 | 2004-02-19 | Han Cao | Gradient structures interfacing microfluidics and nanofluidics, methods for fabrication and uses thereof |
US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US6900881B2 (en) * | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US20040124566A1 (en) * | 2002-07-11 | 2004-07-01 | Sreenivasan Sidlgata V. | Step and repeat imprint lithography processes |
US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US20040021866A1 (en) * | 2002-08-01 | 2004-02-05 | Watts Michael P.C. | Scatterometry alignment for imprint lithography |
US20040022888A1 (en) * | 2002-08-01 | 2004-02-05 | Sreenivasan Sidlgata V. | Alignment systems for imprint lithography |
US6916584B2 (en) * | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US20040110856A1 (en) * | 2002-12-04 | 2004-06-10 | Young Jung Gun | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US20040192041A1 (en) * | 2003-03-27 | 2004-09-30 | Jun-Ho Jeong | UV nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization |
US20060019183A1 (en) * | 2004-07-20 | 2006-01-26 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080174046A1 (en) * | 2002-07-11 | 2008-07-24 | Molecular Imprints Inc. | Capillary Imprinting Technique |
US7708926B2 (en) | 2002-07-11 | 2010-05-04 | Molecular Imprints, Inc. | Capillary imprinting technique |
US7691313B2 (en) | 2002-11-13 | 2010-04-06 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US8609326B2 (en) * | 2004-02-18 | 2013-12-17 | Molecular Imprints, Inc. | Methods for exposure for the purpose of thermal management for imprint lithography processes |
US20080153312A1 (en) * | 2004-02-18 | 2008-06-26 | Molecular Imprints, Inc. | Methods for Exposure for the Purpose of Thermal Management for Imprint Lithography Processes |
US20070287081A1 (en) * | 2004-06-03 | 2007-12-13 | Molecular Imprints, Inc. | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
US20050271955A1 (en) * | 2004-06-03 | 2005-12-08 | Board Of Regents, The University Of Texas System | System and method for improvement of alignment and overlay for microlithography |
US7768624B2 (en) | 2004-06-03 | 2010-08-03 | Board Of Regents, The University Of Texas System | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
US7535549B2 (en) | 2004-06-03 | 2009-05-19 | Board Of Regents, University Of Texas System | System and method for improvement of alignment and overlay for microlithography |
US7785526B2 (en) | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US8366434B2 (en) * | 2004-07-20 | 2013-02-05 | Molecular Imprints, Inc. | Imprint alignment method, system and template |
US7981481B2 (en) | 2004-09-23 | 2011-07-19 | Molecular Imprints, Inc. | Method for controlling distribution of fluid components on a body |
US7880872B2 (en) | 2004-11-30 | 2011-02-01 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
US20090169662A1 (en) * | 2004-11-30 | 2009-07-02 | Molecular Imprints, Inc. | Enhanced Multi Channel Alignment |
US7785096B2 (en) | 2004-11-30 | 2010-08-31 | Molecular Imprints, Inc. | Enhanced multi channel alignment |
US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US20070126150A1 (en) * | 2005-12-01 | 2007-06-07 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US7670529B2 (en) | 2005-12-08 | 2010-03-02 | Molecular Imprints, Inc. | Method and system for double-sided patterning of substrates |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
US7780893B2 (en) | 2006-04-03 | 2010-08-24 | Molecular Imprints, Inc. | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
US20070228608A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Preserving Filled Features when Vacuum Wiping |
US8012395B2 (en) | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
US8215946B2 (en) | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
US20080070481A1 (en) * | 2006-09-15 | 2008-03-20 | Nihon Micro Coating Co., Ltd. | Probe cleaner and cleaning method |
US20080303187A1 (en) * | 2006-12-29 | 2008-12-11 | Molecular Imprints, Inc. | Imprint Fluid Control |
US20130295214A1 (en) * | 2007-06-14 | 2013-11-07 | Aji Co., Ltd. | Method of molding, process for producing lens, molding apparatus, process for producing stamper, master production apparatus, stamper production system, and stamper production apparatus |
US9149964B2 (en) * | 2007-06-14 | 2015-10-06 | Aji Co., Ltd. | Method of molding, process for producing lens, molding apparatus, process for producing stamper, master production apparatus, stamper production system, and stamper production apparatus |
US20090014917A1 (en) * | 2007-07-10 | 2009-01-15 | Molecular Imprints, Inc. | Drop Pattern Generation for Imprint Lithography |
US7837907B2 (en) | 2007-07-20 | 2010-11-23 | Molecular Imprints, Inc. | Alignment system and method for a substrate in a nano-imprint process |
US20090026657A1 (en) * | 2007-07-20 | 2009-01-29 | Molecular Imprints, Inc. | Alignment System and Method for a Substrate in a Nano-Imprint Process |
US8119052B2 (en) | 2007-11-02 | 2012-02-21 | Molecular Imprints, Inc. | Drop pattern generation for imprint lithography |
US20090115110A1 (en) * | 2007-11-02 | 2009-05-07 | Molecular Imprints, Inc. | Drop Pattern Generation for Imprint Lithography |
US8945444B2 (en) | 2007-12-04 | 2015-02-03 | Canon Nanotechnologies, Inc. | High throughput imprint based on contact line motion tracking control |
US20090140445A1 (en) * | 2007-12-04 | 2009-06-04 | Molecular Imprints | High Throughput Imprint Based on Contact Line Motion Tracking Control |
US20090147237A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Spatial Phase Feature Location |
US20090213778A1 (en) * | 2008-01-14 | 2009-08-27 | Zhifeng Tao | Fragmentation and Packing for Wireless Multi-User Multi-Hop Relay Networks |
US8361371B2 (en) | 2008-02-08 | 2013-01-29 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US20090200710A1 (en) * | 2008-02-08 | 2009-08-13 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US8187515B2 (en) | 2008-04-01 | 2012-05-29 | Molecular Imprints, Inc. | Large area roll-to-roll imprint lithography |
US20090243153A1 (en) * | 2008-04-01 | 2009-10-01 | Molecular Imprints, Inc. | Large Area Roll-To-Roll Imprint Lithography |
US8512797B2 (en) | 2008-10-21 | 2013-08-20 | Molecular Imprints, Inc. | Drop pattern generation with edge weighting |
US20100098859A1 (en) * | 2008-10-21 | 2010-04-22 | Molecular Imprints, Inc. | Drop Pattern Generation with Edge Weighting |
US8586126B2 (en) | 2008-10-21 | 2013-11-19 | Molecular Imprints, Inc. | Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement |
US20100102487A1 (en) * | 2008-10-28 | 2010-04-29 | Molecular Imprints, Inc. | Optical System for Use in Stage Control |
US8345242B2 (en) | 2008-10-28 | 2013-01-01 | Molecular Imprints, Inc. | Optical system for use in stage control |
US20100112220A1 (en) * | 2008-11-03 | 2010-05-06 | Molecular Imprints, Inc. | Dispense system set-up and characterization |
US8231821B2 (en) | 2008-11-04 | 2012-07-31 | Molecular Imprints, Inc. | Substrate alignment |
US8432548B2 (en) | 2008-11-04 | 2013-04-30 | Molecular Imprints, Inc. | Alignment for edge field nano-imprinting |
US20100110434A1 (en) * | 2008-11-04 | 2010-05-06 | Molecular Imprints, Inc. | Alignment for Edge Field Nano-Imprinting |
US20100109202A1 (en) * | 2008-11-04 | 2010-05-06 | Molecular Imprints, Inc. | Substrate Alignment |
US20110057354A1 (en) * | 2009-09-10 | 2011-03-10 | Canon Kabushiki Kaisha | Imprinting method and imprinting apparatus |
US8574479B2 (en) * | 2009-09-10 | 2013-11-05 | Canon Kabushiki Kaisha | Imprinting method and imprinting apparatus |
US9310700B2 (en) | 2010-08-13 | 2016-04-12 | Asml Netherlands B.V. | Lithography method and apparatus |
CN105487334A (en) * | 2014-10-03 | 2016-04-13 | 佳能株式会社 | Imprint method, imprint apparatus, and article manufacturing method |
CN107405803A (en) * | 2015-06-03 | 2017-11-28 | 三菱重工业株式会社 | Solidification equipment, curing and the synthetic resin of resin composite materials |
US10935884B2 (en) | 2017-03-08 | 2021-03-02 | Canon Kabushiki Kaisha | Pattern forming method and methods for manufacturing processed substrate, optical component and quartz mold replica as well as coating material for imprint pretreatment and set thereof with imprint resist |
US11037785B2 (en) | 2017-03-08 | 2021-06-15 | Canon Kabushiki Kaisha | Method for fabricating pattern of cured product and methods for manufacturing optical component, circuit board and quartz mold replica as well as coating material for imprint pretreatment and cured product thereof |
Also Published As
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WO2006060758A2 (en) | 2006-06-08 |
JP5198071B2 (en) | 2013-05-15 |
US20080153312A1 (en) | 2008-06-26 |
US8609326B2 (en) | 2013-12-17 |
JP2008522448A (en) | 2008-06-26 |
WO2006060758A3 (en) | 2007-01-04 |
KR20070086766A (en) | 2007-08-27 |
EP1825502A4 (en) | 2008-01-23 |
TW200627082A (en) | 2006-08-01 |
EP1825502A2 (en) | 2007-08-29 |
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