US20050213392A1 - Memory configuration for a wireless communications device - Google Patents
Memory configuration for a wireless communications device Download PDFInfo
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- US20050213392A1 US20050213392A1 US11/131,591 US13159105A US2005213392A1 US 20050213392 A1 US20050213392 A1 US 20050213392A1 US 13159105 A US13159105 A US 13159105A US 2005213392 A1 US2005213392 A1 US 2005213392A1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/72—Mobile telephones; Cordless telephones, i.e. devices for establishing wireless links to base stations without route selection
- H04M1/724—User interfaces specially adapted for cordless or mobile telephones
- H04M1/72403—User interfaces specially adapted for cordless or mobile telephones with means for local support of applications that increase the functionality
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/72—Mobile telephones; Cordless telephones, i.e. devices for establishing wireless links to base stations without route selection
- H04M1/724—User interfaces specially adapted for cordless or mobile telephones
- H04M1/72403—User interfaces specially adapted for cordless or mobile telephones with means for local support of applications that increase the functionality
- H04M1/72409—User interfaces specially adapted for cordless or mobile telephones with means for local support of applications that increase the functionality by interfacing with external accessories
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/30—Reduction of number of input/output pins by using a serial interface to transmit or receive addresses or data, i.e. serial access memory
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- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Read Only Memory (AREA)
Abstract
The present invention provides a method and system that uses serial, writable, nonvolatile memory (serial memory) in a portable radio telephone. According to an object of the present invention, the serial memory may be integral to a cell phone or attached to a cell phone via an add-on card or the like. According to another object, the serial memory may be embedded in a cell phone accessory or attached to an accessory via an add-on card or the like. In both objects, once the portable radio telephone is powered on, data stored in serial memory is transferred into onboard random access memory (RAM), which in turn is utilized by the CPU and/or other cell phone systems. Serial memory includes, but is not limited to, NAND-type flash memory, as well as, flash and EEPROM memories that utilize the following interface architectures: the mircowire bus, the I2C bus, the SPI bus and/or the MPS bus. Among other things, serial memory may store the operating system, applications, and radio calibration parameters.
Description
- 1. Field of the Invention
- The present invention is directed to electronics. The present invention further relates to memory for a wireless communications device.
- 2. Description of Related Art
- On a complexity per cubic inch scale, cellular telephones are some of the most intricate devices people use on a daily basis. Modern digital cellular telephones can process millions of calculations per second in order to compress and decompress the voice stream.
FIG. 7 shows a block diagram of a conventional portable radio telephone 10 (a.k.a. cell phone, cellular phone, mobile phone, wireless phone, etc.). Thecell phone 10 includes anantenna 12 coupled to a transmitter 14 areceiver 16, as well as, amicrophone 18,speaker 20,keypad 22, anddisplay 24. Thecell phone 10 also includes apower supply 26 and a central processing unit (CPU) 28, which may be an embedded controller, conventional microprocessor, or the like. In addition, thecell phone 10 includes integrated, NOR-type flash memory 30. NOR-type flash memory will be defined below with reference toFIG. 8 . - Flash memory, in general, is a type of electrically erasable programmable read only memory (EEPROM). Like EEPROM, flash memory is nonvolatile and thus can maintain its contents even without power. However, flash memory is not standard EEPROM. Standard EEPROMs are differentiated from flash memory because they can be erased and reprogrammed on an individual byte or word basis while flash memory can be programmed on a byte or word basis, but must be erased on a block basis. Although standard EEPROMs may appear to be more versatile, their functionality requires two transistors to hold one bit of data. In flash memory, only one transistor is required to hold one bit of data, which results in a lower cost per bit.
- In flash memory, the basic storage cell is a MOSFET transistor with a floating gate that is electrically isolated between the control gate and the MOSFET channel. A cell is programmed by transferring an electric charge to the floating gate (e.g. by channel hot electron injection) and erased by removing the charge (e.g. by Fowler-Nordheim tunneling). The floating gate is in close physical proximity to the MOSFET channel so that even a small electric charge on the floating gate has an easily detectable effect on the electrical behavior of the transistor. By applying appropriate signals to the MOSFET terminals and measuring the change in the transistor behavior, it is possible to determine whether or not there is an electric charge on the floating gate. The charge on the gate is then compared with a threshold value and each cell is characterized as “1” or “0”.
- Flash memory comes in two primary varieties, NOR-type flash and NAND-type flash. While the general memory storage transistor is the same for all flash memory, it is the interconnection of the memory cells that differentiates the designs.
FIG. 8A shows the conventional NOR-type cell architecture andFIG. 8B shows the conventional NAND-type cell architecture. In NOR-type flash memory, the memory cell transistors are connected to the bit lines in a parallel configuration, while in NAND-type flash memory, the memory cell transistors are connected to the bit lines in series. This is why NOR-type flash is sometimes referred to as “parallel flash” and NAND-type flash is referred to as “serial flash.” - Traditionally, cell phone CPUs have needed only a small amount of integrated NOR-type flash memory to operate. However, as cell phones have become more complex, offering more features and more services, memory requirements have steadily increased. Unfortunately, contrary to the normal trend for memory devices, such as dynamic random access memory (DRAM), NOR-type flash memory pricing has increased at a rate beyond the pro rata increases in capacity for such devices.
- By far, NOR-type flash memory is the dominant type of flash memory in the market today. NOR-type flash memory has fast random read speeds, making the NOR architecture suitable for the fast random access required for program execution. In addition, the interface to NOR-type flash memory is designed for direct memory access, having separate address, data, and control lines. This enables a direct connection to microprocessors and permits direct execution of program code. For these reasons, manufactures have chosen to utilize NOR-type flash memory in prior art cell phones to execute program code, applications and the like. NAND-type flash memory, on the other hand, has relatively slow random read speeds compared to NOR-type flash memory, but fast erase and program speeds. In addition, the interface to NAND-type flash memory is indirect so there are no dedicated address lines or data lines, just control lines and I/O ports. This makes NAND-type flash memory relatively unsuitable for direct CPU access and execution of program code, but ideal as a mass storage device.
- The current telecommunications market, especially the market for cell phones is extremely competitive. Consumers have many choices. While cell phone feature sets and services can distinguish one phone from the next, price is still an ultimate concern for a vast majority of users. To remain competitive in this market, manufacturers are constantly striving to build lower cost cell phones. Increases in NOR-type flash memory pricing, however, have made it difficult for manufacturers to achieve this goal. Any economies that can be gained in cell phone manufacture would be significant in this tight market.
- The present invention overcomes the perceived deficiencies with NAND-type flash memory and the dependence on NOR-type flash memory in wireless communication devices. A method and system is provided that uses non-addressable or indexed addressable memory or addressable memory that uses a serial interface. The indexed addressable memory is preferably parallel. In another embodiment, however, the indexed memory uses serial data or serial addressing or both.
- According to an object of the present invention, the serial memory may be integral to a cell phone or attached to a cell phone via an add-on card or the like. According to another object, the serial memory may be embedded in a cell phone accessory or attached to an accessory via an add-on card or the like. In both objects, once the portable radio telephone is powered on, data stored in serial memory is transferred into onboard random access memory (RAM), which in turn is utilized by the CPU and/or other cell phone systems.
- The increase of NOR-type flash memory prices and the effect of those prices on overall cell phone manufacturing costs have prompted the need for alternative memory configurations. The dependence of prior art cell phones on integrated, NOR-type flash memory forces manufactures to comply with ever increasing memory prices and prevents manufacturers from offering cell phones at more economical prices. By replacing the expensive integral, NOR-type flash memory with serial memory, as described herein, manufacturers will be able to achieve significant cost reductions ultimately leading to less costly cell phones for consumers.
- Other objects, advantages, and embodiments of the invention are set forth in part in the description that follows, and in part, will be obvious from this description, or may be learned from the practice of the invention.
- The foregoing and other objects, features and advantages of this invention will become more apparent by reference to the following detailed description of the invention taken in conjunction with the accompanying drawings, wherein:
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FIG. 1 shows an embodiment of the present invention, wherein the contents of serial memory are transferred to SDRAM via a dedicated onboard serial memory interface controller with serial memory logic. -
FIG. 2 shows an embodiment of the present invention, wherein the contents of serial memory are transferred to SRAM via a dedicated onboard serial memory interface controller with serial memory logic. -
FIG. 3 shows an embodiment of the present invention, wherein the contents of serial memory are transferred to SDRAM via a dedicated onboard serial memory interface controller with serial memory logic after the CPU, executing code read from an onboard ROM determines the presence of serial memory. -
FIG. 4 shows an embodiment of the present invention, wherein the contents of serial memory are transferred to SRAM via a dedicated onboard serial memory interface controller with serial memory logic after onboard the CPU, executing code read from an ROM determines the presence of serial memory. -
FIG. 5 shows an embodiment of the present invention, wherein serial memory included in a cell phone accessory is transferred to RAM located in a cell phone. -
FIG. 6 shows, in part, an example of how the dedicated onboard serial memory interface controller with serial memory logic would operate to transfer the contents of serial memory to RAM. -
FIG. 7 shows a diagram of a conventional radio telephone. -
FIG. 8A shows a portion of a conventional NOR-type flash memory. -
FIG. 8B shows a portion of a conventional NAND-type flash memory. - As stated above, while serial memory is not well suited for direct CPU access and direct execution of program code, it is ideally suited as an inexpensive storage vehicle for, among other things, operating systems, program code, applications, radio calibration parameters and phonebooks. The present invention takes advantage of the strengths of serial memory and utilizes them in an alternative memory configuration for use with a portable radio telephone. In the following discussion several examples will be given that use serial memory. Serial memory is used to illustrate the concepts, however it will be clear to one skilled in the art that other types of memory can be used.
- Devices that are addressable, but use serial data, serial address, or a combination of the two can also be used. Serial data, serial address, or a combination of the two would be used when a memory device that is extremely input/output limited is selected. It will be clear to one of skill in the art that the input/output pin limitation may be on devices with a high number of input/output pins, but where a large number of pins are needed to perform other functions of the device. Clocked serial memory, clocked parallel memory, indexed addressable memory, and addressable devices that use some form of serial interface as described above will be referred to as indirectly-read memory. It will be clear to one of skill in the art that the indirectly-read memory may be writeable, one-time writable, electrically erasable, ultraviolet light erasable, erased by a means other than electrically or ultraviolet light, programmable by the user, programmable at the factory, or a ROM memory that is not programmable. This list is not meant to be exhaustive.
- As embodied and broadly described herein, the present invention is directed to a novel method and system for using serial, writable, nonvolatile memory (serial memory) with a portable radio telephone. Serial memory includes, but is not limited to, NAND-type flash memory, as well as, flash and EEPROM memories that utilize the following interface architectures: the mircowire bus, the I2C bus, the SPI bus and/or the MPS bus. Specific examples of serial memory include, but are not limited to, MultiMediaCard, Memory Stick, SmartMedia card, and SD (Secure Digital) Memory Card.
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FIG. 1 shows an embodiment of the present invention, wherein acell phone 100 includes a serialmemory interface controller 105 with embedded serialmemory interface logic 110. In this embodiment, the serialmemory interface controller 105 is implemented as dedicated hardware so that when thecell phone 100 is powered on, the serialmemory interface controller 105 loads the data stored inserial memory 115 into random access memory (RAM) 120. In one embodiment, the RAM is synchronous dynamic random access memory (SDRAM). Serial memory may store data representing critical operations, including, but not limited to, an operating system, a program application and any calibration parameters that may be associated with the wireless communications device. In addition, serial memory may include less critical data including, but not limited to, phonebooks, recent call lists, display settings, roaming preferences, and ringer preferences. - Once the data stored in serial memory is loaded into
RAM 120, theCPU 125 can execute program code and access data directly out of the RAM. As is well known in the art, DRAM needs to be refreshed thousands of times per second in order for it to maintain its contents, thus, in the embodiment in whichRAM 120 is SDRAM,optional DRAM controller 130 is needed to manage the refresh of theSDRAM 120. In this embodiment, all of the data stored in serial memory is imaged to the SDRAM. However, it is contemplated that a paging system could be implemented wherein needed data is fetched from the serial memory as needed by the CPU. That is to say, when the CPU needs data that is not already loaded into RAM, or SDRAM, the CPU directs the serial memory interface controller to load the needed data from the serial memory into RAM. -
FIG. 2 shows another embodiment of the present invention, wherein acell phone 200 includes a serialmemory interface controller 205 with embedded serialmemory interface logic 210. In this embodiment, the serialmemory interface controller 205 is implemented as dedicated hardware so that when thecell phone 200 is powered on, the serialmemory interface controller 205 begins to load the data stored inserial memory 215 intoSRAM 220. Similarly to theserial memory 115 described with reference toFIG. 1 , theserial memory 215 may store data representing critical operations including, but not limited to, an operating system, a program application and any calibration parameters that may be associated with the wireless communications device. In addition, serial memory may include less critical data including, but not limited to, phonebooks, recent calls lists, display settings, roaming preferences, and ringer preferences. Once the data is loaded intoSRAM 220, theCPU 225 can execute program code and access data directly out of the SRAM. Unlike the previous embodiment, SRAM does not need to be refreshed in order to maintain its contents and thus an additional controller is not needed. In this embodiment, all of the data stored in serial memory is imaged to the SRAM. However, it is contemplated that a paging system could be implemented wherein needed information is fetched from the serial memory as needed by the CPU. That is to say, when the CPU needs an instruction, application or the like that is not already loaded into SRAM, the CPU could direct the serial memory interface controller to load the needed data from the serial memory into SRAM. - Similarly to the
serial memories 115 215 described with reference toFIG. 1 andFIG. 2 respectively,FIG. 3 shows another embodiment of the present invention, wherein acell phone 300 includes a serialmemory interface controller 305 with embedded serialmemory interface logic 310. In this embodiment, thecell phone 300 also includesonboard ROM 307. Theonboard ROM 307 contains boot code so when thecell phone 300 is powered on, the CPU, executing code read from theonboard ROM 307 will detect whetherserial memory 315 is present. If theROM 307 detectsserial memory 315, the serialmemory interface controller 305 is directed to load the data stored inserial memory 315 intoSDRAM 320. According to this embodiment, if the CPU, executing code read from theonboard ROM 307, detects the presence ofserial memory 315, all of the data stored in serial memory is imaged to the SDRAM. However, it is contemplated, as described above, that a paging system could be implemented wherein needed information is fetched from the serial memory as needed by the CPU. -
FIG. 4 shows another embodiment of the present invention, wherein acell phone 400 includes a serialmemory interface controller 405 with embedded serialmemory interface logic 410. In this embodiment, thecell phone 400 also includesonboard ROM 407. Theonboard ROM 407 contains boot code so when thecell phone 400 is powered on, the CPU executing code read from theonboard ROM 407 will detect whetherserial memory 415 is present. If theROM 407 detectsserial memory 415, the serialmemory interface controller 405 is directed to load the data stored inserial memory 415 intoSRAM 420. -
FIG. 5 shows a cell phone 500 and acell phone accessory 502 that includes aserial memory 515. According to this embodiment, when thecell phone accessory 502 is attached to the cell phone 500, the contents of theserial memory 515 in thecell phone accessory 502 are loaded into onboard RAM 520 (i.e. SRAM or SDRAM), which is located in the cell phone 500. Thecell phone CPU 525 can then execute program code or read data directly from theRAM 520. - By including the serial memory in the cell phone accessory, this embodiment provides a means in which completely new devices can be manufactured without the need for additional expensive microprocessors and associated program logic. For example, the cell phone accessory may be designed to connect to the cell phone to create a digital camera unit. In this example, the accessory includes the standard digital camera hardware (i.e. lens, flash, focus apparatus, etc), but does not need an additional CPU or additional program logic. The entire operating system, program applications, and program logic for the digital camera are stored in the serial memory. Upon connection of the accessory to the cell phone, the contents of the serial memory in the accessory are imaged to the onboard RAM in the cell phone thereby allowing the cell phone CPU to control and run the digital camera program code. Examples of other types of accessories include, but are not limited to, DVD players, personal digital assistants (PDAs), and video game consoles.
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FIG. 6 shows, in part, an example of how a serial memory interface controller with embedded serial memory interface logic operates. As discussed earlier, serial memory typically utilizes a serial bus interface. RAM, however, typically has a parallel interface. Therefore, it is necessary to convert the serially read contents of nonintegral memory to a parallel structure so that the data can be written to RAM. Likewise, although not shown in this example, the serial interface controller with embedded serial memory interface logic must also be able to convert from parallel to serial so that new information can be written from RAM to serial memory. - One skilled in the art would recognize that there are numerous ways to perform the conversion from serial to parallel and parallel to serial.
FIG. 6 merely provides one example of how the task of converting from serial to parallel can be accomplished. The basic configuration includes ashift register 600, a counter (not shown) and a comparator (not shown). Theshift register 600 in this example is an 8 bit right-shift register, although other configurations are possible. In this example, the data stored in serial memory is sent one bit at a time (that is to say, one bit every clock cycle) to the serial inline 605. Each rising edge of theclock 610, the data present at the serial inline 605 is clocked into the first flip-flop 615. Simultaneously, whatever is in the first flip-flop 615 is latched into the second flip-flop 620 and whatever is in the second flip-flop 620 is latched into the third flip-flop 625 and so on through flip-flops shift register 600. After eight bits have been sent to theshift register 600, the comparator will then send a write pulse to RAM and the eight bits in theshift register 600 will be simultaneously written to RAM. This process can be repeated as long as data needs to be transferred to the addressable memory. - It will be clear to one skilled in the art that configurations other than 8 bit right shift registers are possible. For example a 16 bit right shift register can be used. In this example the counter would count to 16, after 16 bits have been sent the comparator will send a write pulse to RAM. Additionally as stated above, it will be clear to those skilled in the art that the memory does not have to be a serial memory. A clocked memory that outputs more than 1 bit at a time can be used. A memory that outputs more than 1 bit at a time is known as a parallel memory. In one embodiment a clocked memory that outputs 8 bits is used. If the RAM is written to 8 bits at a time then a write pulse will be sent to the RAM for each 8 bits of data that is clocked out of the clocked memory. Other embodiments that use clocked memory are possible. For example an 8 bit wide clocked memory can be used to write 16 bits to RAM if the write pulse is sent to the RAM after two 8 bit words are clocked out of the clocked memory.
- Additionally a memory that is addressable only one small portion at a time, referred to here as indexed addressable memory, can be used. By enabling the reading of one section of indexed addressable memory and reading that memory into the addressable memory and continuing the process until the desired information is stored in the addressable memory.
- Other embodiments and uses of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. The specification and examples should be considered exemplary only, with the true scope and spirit of the invention being indicated by the following claims. As will be understood by those of ordinary skill in the art, variations and modifications of each of the disclosed embodiments, including combinations thereof, can be easily made within the scope of this invention as defined by the following claims.
Claims (19)
1-43. (canceled)
44. A memory configuration for a wireless communications device, comprising:
a NAND-type flash memory for storing data, the NAND-type flash memory serially addressable through a serial port;
a serial address and data bus including a first bus end and a second bus end, the first end connected to the serial port of the NAND-type flash memory;
a processing unit connected to the second bus end, the processing unit configured to read the data from the NAND-type flash memory upon a power-on condition, the processing unit for converting the serial data to parallel data for storage in a volatile random access memory (RAM);
the volatile RAM memory for storing at least a portion of the data read from the NAND-type flash memory;
a communications circuit connected to the processing unit, the processing unit controlling the communications circuit utilizing the at least a portion of the data read from the volatile RAM memory, the communications circuit comprising:
a transmitter circuit;
a receiver circuit; and
an antenna connected to the transmitter circuit and the receiver circuit.
45. The memory configuration of claim 44 , wherein the NAND-type flash memory is non-volatile serial memory.
46. The memory configuration of claim 44 , further comprising a device housing for housing the NAND-type flash memory, the serial address and data bus, the processing unit, the volatile RAM memory and the communication circuit.
47. The memory configuration of claim 44 , further comprising a serial connector port connected between the first bus end and the second bus end, the serial connector port for removably connecting the NAND-type flash memory.
48. The memory configuration of claim 47 , further comprising:
a device housing for housing the serial address and data bus, the processing unit, the volatile RAM memory and the communication circuit;
wherein the serial connector port is on a surface of the device housing and the NAND-type flash memory is connected external to the device housing.
49. The memory configuration of claim 44 , wherein the power-on condition triggers the processing unit to determine whether the NAND-type flash memory is connected to the processing unit to begin transfer of the at least a portion of the data from the NAND-type flash memory to the RAM memory.
50. The memory configuration of claim 44 , wherein the at least a portion of the data stored in the NAND-type flash memory is critical operations data.
51. The memory configuration of claim 50 , wherein the critical operations data is an application program that is critical to an operation of the wireless communications device.
52. The memory configuration of claim 44 , wherein the at least a portion of the data stored in the NAND-type flash memory is non-critical operations data comprising at least one of user interface information, a recent call list, a display setting, a roaming preference, a ringer preference, a non-critical application program, and a phone book.
53. A method for initializing a memory configuration in a wireless communications device, comprising the steps of:
serially addressing a NAND-type flash memory via a serial address bus, the NAND-type flash memory for storing data, the serial address and data bus including a first bus end and a second bus end, the first end connected to a serial port of the NAND-type flash memory;
reading data from the NAND-type flash memory upon a power-on condition utilizing a processing unit connected to the second bus end;
converting the serial data to parallel data;
storing at least a portion of the converted data in a volatile random access memory (RAM);
reading the at least a portion of the data from the volatile RAM memory to control a communications circuit comprising a transmitter circuit, a receiver circuit, and an antenna connected to the transmitter circuit and the receiver circuit.
54. The method of claim 53 , wherein the NAND-type flash memory is non-volatile serial memory.
55. The method of claim 53 , wherein the NAND-type flash memory, the serial address and data bus, the processing unit, the volatile RAM memory and the communication circuit are contained in a communications device housing.
56. The method of claim 53 , wherein a serial connector port is connected between the first bus end and the second bus end, the method further comprising the step of:
electrically connecting the NAND-type flash memory the serial connector port prior to the power-on condition.
57. The method of claim 53 , wherein the serial address and data bus, the processing unit, the volatile RAM memory and the communication circuit are contained in a communications device housing, and wherein the serial connector port is on a surface of the device housing, wherein the step of electrically connecting the NAND-type flash memory comprises the step of:
electrically connecting the NAND-type flash memory to the serial connector port external to the communications device housing.
58. The method of claim 53 , further comprising the steps of:
determining whether the NAND-type flash memory is connected to a processing unit upon the power-on condition; and
transferring the at least a portion of the data from the NAND-type flash memory to the RAM memory if the NAND-type flash memory is connected.
59. The method of claim 53 , wherein the at least a portion of the data stored in the NAND-type flash memory is critical operations data.
60. The method of claim 59 , wherein the critical operations data is an application program that is critical to an operation of the wireless communications device.
61. The method of claim 53 , wherein the at least a portion of the data stored in the NAND-type flash memory is non-critical operations data comprising at least one of user interface information, a recent call list, a display setting, a roaming preference, a ringer preference, a non-critical application program, and a phone book.
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