US20050186724A1 - Method for manufacturing semiconductor integrated circuit device - Google Patents
Method for manufacturing semiconductor integrated circuit device Download PDFInfo
- Publication number
- US20050186724A1 US20050186724A1 US11/111,890 US11189005A US2005186724A1 US 20050186724 A1 US20050186724 A1 US 20050186724A1 US 11189005 A US11189005 A US 11189005A US 2005186724 A1 US2005186724 A1 US 2005186724A1
- Authority
- US
- United States
- Prior art keywords
- insulating film
- region
- semiconductor substrate
- film
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 165
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 title abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 33
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 24
- 125000006850 spacer group Chemical group 0.000 abstract description 14
- 206010010144 Completed suicide Diseases 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 62
- 239000011229 interlayer Substances 0.000 description 22
- 238000002955 isolation Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000006870 function Effects 0.000 description 7
- 238000000992 sputter etching Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
Definitions
- the present invention relates to a technique for use in the manufacture of a semiconductor integrated circuit device; and more specifically, the invention relates to a technique that is effective for application to a semiconductor integrated circuit device including a short channel MIS (metal insulator semiconductor) having a gate length, i.e. the width of the gate electrode, which is less than 0.1 ⁇ m.
- MIS metal insulator semiconductor
- the film thickness of the gate insulating film in a MIS transistor having a gate length which is less than 0.07 ⁇ m is presumed to be less than 1.2 nm.
- thinning a conventionally used silicon oxide film for use in the gate insulating film will cause the leakage current to exceed 10 A/cm 2 , which involves an increase in the standby current, thereby creating a problem.
- an insulating film having a comparably high relative dielectric constant for example, an alumina film having a relative dielectric constant which is about 7 to 11 for the gate insulating film, and in which the effective film thickness is reduced while maintaining the physical film thickness at 1.5 nm or more.
- the effective film thickness signifies an equivalent silicon oxide film thickness in consideration of the relative dielectric constant.
- the publication IEDM International Electron Device Meetings in an article entitled “80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications” at pp.223-226, 2000 discloses the performance characteristic of a MIS transistor having a gate insulating film made of an alumina film, with a gate length of less than 0.1 ⁇ m.
- the MIS transistor As the integration of semiconductor devices increases, the MIS transistor is being made still finer according to the scaling law; and, accompanied with this, the resistances of the gate, source, and drain regions increase, thus leading to a problem in that the micro-structuring of the MIS transistor does not provide a high-speed performance. And, in the MIS transistor having a gate length of less than 0.2 ⁇ m, for example, a high-speed performance has been pursued by silicifying the conductive film forming the gate, as well as the semiconductor regions forming the sources and drains.
- a method is employed which removes an insulating film on the same layer as a gate insulating film on the substrate, for example, by reactive etching, and, thereafter, forms silicide layers of a low resistance on the surfaces of the semiconductor regions forming sources and drains by use of a self-aligning method.
- the above-mentioned reactive etching is one example of dry etching techniques typically used in a semiconductor manufacturing process, in which etching through a chemical reaction is performed by utilizing a chemically active excited activator. This technique will restrain etching damage so as to achieve a comparably high etching selection ratio.
- the inventor of this invention has examined the technique used in the manufacture of a MIS device using a high dielectric constant insulating film for the gate insulating film, and it was confirmed clearly that with the reactive etching, it is difficult to remove the high dielectric constant insulating film, and this leads to an impossibility of silicifying the semiconductor regions forming sources and drains.
- An object of the present invention is to provide a technique that makes it possible to form a circuit to accomplish a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device having plural types of MIS transistors, in which the gate insulating film is made of a high dielectric constant insulating film.
- the method of manufacture of a semiconductor integrated circuit device includes the steps of: preparing a semiconductor substrate of a first conductive type, having a first region and a second region on a surface thereof; forming plural trenches on the surface of the semiconductor substrate in the first region and the second region, and forming a first insulating film inside the plural trenches; forming a second insulating film having a relative dielectric constant that is higher than that of the first insulating film on the surface of the semiconductor substrate in the first region and the second region; forming a first conductive piece on the second insulating film in the first region, and forming a second conductive piece on the second insulating film in the second region; introducing first impurities of a second conductive type opposite to the first conductive type into the surface of the semiconductor substrate, in a region of both ends of the first conductive piece and a region of both ends of the second conductive piece; removing the second insulating film, except at least a lower layer of the first conductive piece and the second region; depositing
- the method of manufacture of a semiconductor integrated circuit device further includes, in addition to the steps included in the above-described manufacturing method (1), the steps of: depositing a third insulating film in the first and second regions; applying etching to the third insulating film to form a first contact hole in a region between the first conductive piece and the first insulating film, in the first region; applying etching to the third insulating film to form a second contact hole in a region between the second conductive piece and the first insulating film, in the second region; and forming a third conductive piece in the first contact hole, and a fourth conductive piece in the second contact hole, in which the distance between the first conductive piece and the first insulating film in the first region is larger than the distance between the second conductive piece and the first insulating film in the second region.
- FIG. 1 is a block diagram of a semiconductor integrated circuit device representing one embodiment of the invention
- FIG. 2 is an equivalent circuit diagram of a DRAM cell formed in a memory region
- FIG. 3 is an equivalent circuit diagram of a SRAM cell formed in a memory region
- FIG. 4 is a sectional view of a major part of the semiconductor substrate, which illustrates an n-channel MIS transistor formed in a memory region;
- FIG. 5 is a sectional view of a major part of the semiconductor substrate, which illustrates the n-channel MIS transistor formed in a logic region;
- FIG. 6 is a sectional view of a major part of the semiconductor substrate, which illustrates the n-channel MIS transistor formed in an I/O region;
- FIG. 7 is a sectional view of a major part of the semiconductor substrate, which illustrates the n-channel MIS transistor forming a capacitance element
- FIG. 8 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in a method of manufacturing the semiconductor integrated circuit device according to one embodiment of the invention
- FIG. 9 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 10 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 11 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention
- FIG. 12 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention
- FIG. 13 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention
- FIG. 14 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 15 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 16 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention
- FIG. 17 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 18 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 19 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention.
- FIG. 20 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing a semiconductor integrated circuit device according to a second embodiment of the invention
- FIG. 21 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the second embodiment of the invention.
- FIG. 22 is a sectional view of a major part of the semiconductor substrate, illustrating an n-channel MIS transistor formed in a memory region, according to a third embodiment of the invention.
- FIG. 1 is a block diagram showing one example of the semiconductor integrated circuit device according to one embodiment of the invention. First, a general outline of the construction of the semiconductor integrated circuit device of the embodiment 1 will be described with reference to the drawing.
- the semiconductor integrated circuit device is roughly divided into a memory region, logic region, and I/O (Input/Output interface) region.
- the memory region A 1 has 2 N+M memory cells MC (or, simply cells) arrayed, each of which memorizes, for example, one bit of binary information, so that the memory region A 1 is capable of memorizing 2 N+M bits of information.
- the memory cells MC are arrayed two-dimensionally in a matrix structure, among which a memory cell MC is accessed by enabling each one of the selection lines L 1 , L 2 in the row and column directions to select the memory cell MC lying at the intersection thereof. Assuming that the number of selection lines L 1 in the row direction is 2 N and the number of the selection lines L 2 in the column direction is 2 M , the number of the circuits to drive the memory cells is 2 N +2 M .
- the memory region A 1 is called a memory cell array, a memory matrix, a memory array, or simply an array.
- the selection line L 1 in the row direction is called a row line, X line, or word line; while, the selection line L 2 in the column direction is called a column line, Y line, or data line.
- the logic region A 2 is an associated circuit block that controls the memory region A 1 on the basis of the control signals or data supplied to the I/O region A 3 , and it exchanges data with the memory region A 1 .
- One of the typical circuit blocks is a decoder, for example.
- the decoders constitute a logic circuit group that receives N pairs and M pairs of address signals from the address buffers inside the I/O region A 3 , and selects one row line among the 2 N row lines and one column line among 2 M column lines.
- the drivers connected to the outputs of individual decoders drive the row lines and the column lines. It also includes an I/O control circuit that controls the exchange of data, and so forth.
- the I/O region A 3 is a circuit block that converts the control signals and the write data inputted from the outside into internal signals and operates to transfer the results to the logic region A 2 , and it outputs to the outside the read data that is taken out to the logic region A 2 from the memory region A 1 .
- One of the typical circuit blocks is an address buffer, for example.
- the address buffers are circuits that receive (N+M) address input signals for appointing cell selection addresses inside the memory region A 1 , and they generate N pairs and M pairs of internal address signals. It also includes a data I/O circuit, write control circuit or control block circuit, and so forth.
- FIG. 2 illustrates an equivalent circuit of a memory cell of a DRAM (Dynamic Random Access Memory); while, FIG. 3 illustrates an equivalent circuit of a memory cell of a SRAM (Static Random Access Memory).
- memory cells can be cited which constitute a logic consolidated memory having memory circuits and logic circuits formed on one substrate, and a nonvolatile memory, etc., however, the explanations of these will be omitted.
- a DRAM cell is composed of a MIS transistor Q that performs as a switch, and a capacitor C that stores information in the form of a charge.
- the DRAM cell stores information on the basis of whether the capacitor C holds a charge or not, that is, whether the terminal voltage across the capacitor C is high or low, in correspondence with the binary information “1”, “0”.
- a data write operation involves the applying of a voltage corresponding to the data from the outside to the cell.
- a data read operation involves taking out information indicating whether the capacitor C holds a charge or not to the outside of the cell, in correspondence with the high or low level of the voltage, and checking the information.
- a SRAM cell is composed of a flip-flop circuit that operates to store data and two transfer MIS transistors Qt.
- the flip-flop circuit is configured with two inverters, such that the input of one inverter is connected to the output of the other inverter, and the output of the one is connected to the input of the other.
- the inverters are made up of load elements Lo and drive MIS transistors Qd.
- the load element Lo can be a MIS transistor or a resistance element, for example, a polycrystalline silicon film.
- the high voltage (H) is applied to one of the data line pair D, /D, and the low voltage (L) is applied to the other to supply these voltages to a pair of nodes N 1 , N 2 .
- the two combinations of these voltages to be given are given H, L or L, H, respectively) are associated with the binary write data.
- the data reading is performed by detecting the voltages appearing on the data line pair D, /D in correspondence with the combinations of the high and low levels of the voltages at the nodes N 1 , N 2 .
- FIG. 4 illustrates an n-channel MIS transistor formed in the memory region
- FIG. 5 illustrates the n-channel MIS transistor formed in the logic region
- FIG. 6 illustrates the n-channel MIS transistor formed in the I/O region
- FIG. 7 illustrates the n-channel MIS transistor forming a capacitance element.
- the n-channel MIS transistor Q 1 can be identified as the selection MIS transistor Q which forms a constituent element of the DRAM cell mentioned with reference to FIG. 2 , and the transfer MIS transistor Qt and the drive MIS transistor Qd which form constituents of the SRAM cell mentioned with reference to FIG. 3 .
- the threshold voltage (Vth) of the n-channel MIS transistor Q 1 is comparably high, which can be regarded as, for example, about 0.4 Volt.
- the operation voltage (Vcc) applied to the n-channel MIS transistor Q 1 is a low voltage, which can be set to, for example, about 0.85 Volt.
- the n-channel MIS transistor Q 1 is formed in an active region that is surrounded by device isolation sections formed on a p-type semiconductor substrate 1 .
- the device isolation sections are made up of shallow trenches 2 formed on the semiconductor substrate 1 , and a silicon oxide film 3 embedded therein.
- a pair of n-type semiconductor regions 12 forms the source and the drain.
- a gate insulating film 8 that is formed of a high dielectric constant insulating film 7 , is formed on the semiconductor substrate 1 , on which there is a gate electrode (conductive piece) 11 formed of a polycrystalline silicon film 10 .
- the high dielectric constant insulating film 7 is formed on substantially the whole surface of the active regions and the device isolation sections overlying the semiconductor substrate 1 .
- a spacer (sidewall insulating film) 13 that is made of, for example, a silicon oxide film, is formed on the sidewall of the gate electrode 11 , and a silicide layer 14 is formed on the gate electrode 11 .
- a SAC (self-aligned contact) insulating film 15 and an interlayer insulating film 16 are formed in order from the lower layer.
- the SAC insulating film 15 can be made of, for example, a silicon nitride film; and, the interlayer insulating film 16 can be made of, for example, a silicon oxide film.
- the SAC insulating film 15 functions as an etching stopper layer for the interlayer insulating film 16 .
- the high dielectric constant insulating film 7 can be used as an etching stopper layer for the interlayer insulating film 16 , it is not necessary to form the SAC insulating film 15 .
- Contact holes 17 a are formed through the interlayer insulating film 16 , the insulating film 15 , and the high dielectric constant insulating film 7 on the same layer as the gate insulating film 8 , so as to reach a pair of the n-type semiconductor regions 12 .
- Wires 19 are connected to a pair of the n-type semiconductor regions 12 through plugs (conductive pieces) 18 buried in the contact holes 17 a .
- plugs (conductive pieces) 18 buried in the contact holes 17 a .
- a circular contact hole is preferred, because of the necessity of reducing the parasitic capacitance.
- a slot shape may be adopted, which is formed so as to bridge the n-type semiconductor regions 12 forming the source and the drain and the device isolation sections. In this case, conductive films to be buried in this slot can also be used as local wirings.
- the threshold voltage (Vth) of the n-channel MIS transistor Q 2 is comparably low, which can be regarded as, for example, about 0.1 Volt.
- the operation voltage (Vcc) applied to the n-channel MIS transistor Q 2 is a low voltage, which can be set to, for example, about 0.85 Volt.
- the n-channel MIS transistor Q 2 is formed, in the same manner as the n-channel MIS transistor Q 1 , in the active region surrounded by the device isolation sections formed on the p-type semiconductor substrate 1 .
- a pair of the n-type semiconductor regions 12 forms the source and the drain.
- the gate insulating film 8 that is formed of the high dielectric constant insulating film 7 , is formed on the semiconductor substrate 1 , on which the gate electrode 11 formed of the polycrystalline silicon film 10 is formed.
- the spacer 13 and the silicide layer 14 are formed on the sidewall and on the upper surface of the gate electrode 11 , respectively.
- the high dielectric constant insulating film 7 is formed only in a region surrounded by the gate electrode 11 , the spacer 13 , and the semiconductor substrate 1 , which makes up the gate insulating film 8 .
- the silicide layers 14 for lowering the resistance are formed on a pair of the n-type semiconductor regions 12 .
- the SAC insulating film 15 and the interlayer insulating film 16 are formed in order from the lower layer.
- Contact holes 17 are formed through the interlayer insulating film 16 and the insulating film 15 so as to reach the silicide layers 14 on a pair of the n-type s type semiconductor regions 12 .
- Wires 19 are connected to the silicide layers 14 on a pair of the n-type semiconductor regions 12 through the plugs 18 buried in the contact holes 17 .
- the threshold voltage (Vth) of the n-channel MIS transistor Q 3 is comparably high, which can be regarded as, for example, about 0.4 Volt.
- the operation voltage (Vcc) applied to the n-channel MIS transistor Q 3 is a high voltage, which can be set to, for example, about 1.5 Volt.
- the n-channel MIS transistor Q 3 is formed, in the same manner as the n-channel MIS transistor Q 1 , in the active region surrounded by the device isolation sections that are formed on the p-type semiconductor substrate 1 .
- a pair of the n-type semiconductor regions 12 forms the source and the drain.
- a gate insulating film 9 having a laminated structure made of a silicon oxide film 6 and the high dielectric constant insulating film 7 , is formed on the semiconductor substrate 1 .
- the gate electrode 11 of the polycrystalline silicon film 10 is formed on the gate insulating film 9 .
- the laminated layer (the silicon oxide film 6 and the high dielectric constant insulating film 7 ) is formed only in a region surrounded by the gate electrode 11 , the spacer 13 , and the semiconductor substrate 1 , which makes up the gate insulating film 9 .
- the silicide layers 14 are formed on a pair of the n-type semiconductor regions 12 .
- the SAC insulating film 15 and the interlayer insulating film 16 are formed in order from the lower layer.
- the contact holes 17 are formed through the interlayer insulating film 16 and the insulating film 15 so as to reach the silicide layers 14 on a pair of the n-type semiconductor regions 12 .
- the wires 19 are connected to the silicide layers 14 on a pair of the n-type semiconductor regions 12 through the plugs 18 buried in the contact holes 17 .
- the operation voltage (Vcc) applied to the n-channel MIS transistor Q 4 is a low voltage, which can be set to, for example, about 0.85 Volt.
- the n-channel MIS transistor Q 4 has substantially the same structure as the n-channel MIS transistor Q 1 . However, in the active region that forms the n-channel MIS transistor Q 4 , an n-well 4 a can be formed, in addition to a p-well of the same conductive type as the semiconductor substrate 1 . And, the operation voltage (Vcc) is applied to the gate electrode 11 , and a pair of the n-type semiconductor regions 12 is connected to the ground voltage.
- Table 1 gives a brief summary of the construction of the MIS transistor in the memory region, the MIS transistor in the logic region, the MIS transistor in the I/O region, and the MIS transistor forming the capacitance element.
- the gate insulating film is made of a high dielectric constant insulating film; whereas, in the MIS transistor in the I/O region, the gate insulating film is made of a laminated film composed of a silicon oxide film and a high dielectric constant insulating film.
- the silicide layers are formed on the upper surfaces of a pair of the n-type semiconductor regions that form the sources and the drains of the MIS transistors in the logic region, MIS transistors in the I/O region, and MIS transistors forming the capacitance elements; however, the silicide layers are not formed on the upper surfaces of a pair of the n-type semiconductor regions that form the sources and the drains of the MIS transistors in the memory region.
- the SAC insulating film is formed beneath the interlayer insulating film, which has a high etching selection ratio relative to the interlayer insulating film and functions as an etching stopper layer.
- the interlayer insulating film is formed of a silicon oxide film
- the SAC insulating film is formed of a silicon nitride film.
- the hole in which the plug is buried a circular contact hole is preferred, because of the necessity of reducing the parasitic capacitance in any MIS transistors.
- the hole in the memory region may have a slot form as well.
- a semiconductor substrate 1 made of a p-type silicon monocrystal with a specific resistance of about 10 ⁇ cm is prepared, and the shallow trenches 2 are formed on the principal plane of the semiconductor substrate 1 .
- a thermal oxidation processing is applied to the semiconductor substrate 1 , and the silicon oxide film 3 is deposited to overlie the semiconductor substrate 1 .
- the deposited layer is polished using a CMP (chemical mechanical polishing) method so as to leave the silicon oxide film 3 inside the shallow trenches 2 , thereby forming the device isolation sections.
- a heat treatment is applied to the semiconductor substrate 1 at a temperature of about 1000° C. to thereby fasten the silicon oxide film 3 embedded in the device isolation sections.
- boron ions are implanted into the semiconductor substrate 1 , as p-type impurities, to form the p-type well 4 .
- ions of impurities are implanted to form a punch-through stopper layer 5 , thereby restraining the short channel effect.
- the silicon oxide film 6 is formed on the surface of the semiconductor substrate 1 .
- the silicon oxide film 6 can be formed by a thermal oxidation method or a thermal CVD (chemical vapor deposition) method.
- the silicon oxide film 6 is removed from the memory region A 1 and logic region A 2 using a patterned resist film as a mask, thereby leaving the silicon oxide film 6 on the I/O region A 3 .
- the high dielectric constant insulating film 7 for example, an alumina film or a titanium oxide film, is formed to overlie the semiconductor substrate 1 .
- the high dielectric constant insulating film 7 can be deposited by means of the sputtering method.
- the thickness of the high dielectric constant insulating film 7 which is formed to overlie the semiconductor substrate 1 , is set so that the effective thickness thereof becomes about 1 nm. In case of an alumina film or a titanium oxide film, the film is deposited to about 2 nm thick in consideration of the relative dielectric constant.
- a gate insulating film 8 that is made of the high dielectric constant insulating film 7 having an effective film thickness of about 1 nm, is formed in the memory region A 1 and logic region A 2 , to which a low voltage is applied; and, the gate insulating film 9 , that is composed of a laminated film of the silicon oxide film 6 and the high dielectric constant insulating film 7 having the effective film thickness of about 2.5 nm, is formed in the I/O region A 3 , to which a high voltage is applied.
- the polycrystalline silicon film 10 is deposited by the CVD method, to overlie the semiconductor substrate 1 .
- the thickness of the polycrystalline silicon film 10 is about 140 nm, and the sheet resistance thereof is about 100 ⁇ / ⁇ .
- the polycrystalline silicon film 10 is etched using a patterned resist film as a mask to form the gate electrodes 11 of the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 . Thereafter, dry oxidation processing of about 800° C. is applied to the semiconductor substrate 1 .
- n-type impurity for example, arsenic
- the ion implantation of n-type impurity is applied to the p-well 4 , using the gate electrodes 11 as a mask, thereby forming diffusion regions 12 a that constitute parts of the sources and the drains of the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 .
- the arsenic ions are implanted under the energy 3 keV and the dose 1 ⁇ 10 15 cm ⁇ 2 .
- the ion implantation of p-type impurity for example, boron
- p-type impurity for example, boron
- the gate electrodes 11 may be applied to the p-well 4 , using the gate electrodes 11 as a mask, thereby forming pocket regions underneath the diffusion regions 12 a , which effect to restrain expansions of the depletion layers in the source and drain regions, to thereby suppress punch through.
- the silicon oxide film is deposited by the CVD method so as to overlie the semiconductor substrate 1 , and then the silicon oxide film is etched back by plasma etching, thereby forming the spacers 13 on the sidewalls of the gate electrodes 11 of the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 .
- the high dielectric constant insulating film 7 functions as an etching stopper layer, which prevents damage to the semiconductor substrate 1 .
- the ion implantation of an n-type impurity for example, arsenic
- an n-type impurity for example, arsenic
- the gate electrodes 11 and the spacers 13 as a mask, thereby forming diffusion regions 12 b that constitute the other parts of the sources and the drains of the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 .
- the arsenic ions are implanted under the energy 45 keV and the dose 2 ⁇ 10 15 cm ⁇ 2 .
- the high dielectric constant insulating film 7 in the logic region A 2 that is exposed over the semiconductor substrate 1 , and the laminated film composed of the silicon oxide film 6 and the high dielectric constant insulating film 7 in the I/O region A 3 are removed by sputter etching. Thereby, the surfaces of the diffusion regions 12 b in the logic region A 2 and I/O region A 3 are exposed.
- the sputter etching is not applied to the high dielectric constant insulating film 7 in the memory region A 1 so as to leave it over the semiconductor substrate 1 , thereby preventing damage to the semiconductor substrate 1 in the memory region A 1 .
- a high melting point metal film for example, a cobalt film of about 10 to 20 nm thick, is deposited by the sputtering method so as to overlie the semiconductor substrate 1 .
- the heat treatment of 500 to 600° C. is applied to the semiconductor substrate 1 to form the silicide layers 14 selectively on the surfaces of the gate electrodes 11 of the MIS transistors in the memory region A 1 , on the surfaces of the gate electrodes 11 and the diffusion regions 12 b of the MIS transistors in the logic region A 2 , and on the surfaces of the gate electrodes 11 and the diffusion regions 12 b of the MIS transistors in the I/O region A 3 .
- the un-reacted cobalt film is removed by wet etching; and, subsequently, heat treatment of 700 to 800° C. is applied to the semiconductor substrate 1 to reduce the resistance of the silicide layers 14 .
- the thickness of the silicide layers 14 after the heat treatment is about 30 nm, and the sheet resistance thereof is about 4 ⁇ / ⁇ .
- To form the silicide layers 14 on the surfaces of the diffusion regions 12 b in the logic region A 2 and I/O region A 3 lowers the resistance of the diffusion regions 12 b , which serves to increase the operation speed of the logic circuit, especially in the logic region A 2 .
- On the other hand, by not forming the silicide layers on the surfaces of the diffusion regions 12 b in the memory region A 1 damage to the semiconductor substrate 1 in the memory region A 1 is prevented.
- the SAC insulating film 15 for example, a silicon nitride film, is deposited by the plasma CVD method so as to overlie the semiconductor substrate 1 .
- the SAC technique that permits an alignment dislocation is used.
- the interlayer insulating film 16 for example, a silicon oxide film, is formed to overlie the semiconductor substrate 1 .
- the interlayer insulating film 16 is etched by using a patterned resist film as a mask and by using the insulating film 15 as an etching stopper layer. This etching adopts an etching condition under which the etching speed of the interlayer insulating film 16 becomes higher than the etching speed of the insulating film 15 .
- the insulating film 15 is etched.
- This etching adopts the etching condition under which the etching speed of the insulating film 15 becomes higher than the etching speed of the high dielectric constant insulating film 7 , and it makes the high dielectric constant insulating film 7 function as an etching stopper layer in the memory region A 1 .
- the contact holes 17 are formed in the logic region A 2 and I/O region A 3 , so as to reach the silicide layers 14 formed on the surfaces of the diffusion regions 12 b of the MIS transistors, and the contact holes 17 are formed to reach the high dielectric constant insulating film 7 in the memory region A 1 .
- the contact holes 17 can be made circular, with a diameter of about 0.14 ⁇ m.
- the contact holes are simultaneously formed so as to reach the silicide layers 14 on the gate electrodes 11 of the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 .
- the high dielectric constant insulating film 7 on the bottoms of the contact holes 17 in the memory region A 1 is removed by sputter etching, thereby forming the contact holes 17 a that reach the diffusion regions 12 b of the MIS transistors.
- the contact holes 17 in the logic region A 2 and I/O region A 3 and the contact holes 17 a in the memory region A 1 may be formed in different processes.
- the following process may be adopted as an example.
- the interlayer insulating film 16 and the insulating film 15 in the logic region A 2 and I/O region A 3 are sequentially etched using a patterned resist film as a mask so as to form the contact holes 17 ; and then, the interlayer insulating film 16 , the insulating film 15 , and the high dielectric constant insulating film 7 in the memory region A 1 are sequentially etched to form the contact holes 17 a.
- a titanium nitride film is deposited, for example, by the CVD method, so as to overlie the whole semiconductor substrate 1 , including the insides of the contact holes 17 , 17 a .
- a metal film to bury the contact holes 17 , 17 a for example, a tungsten film, is formed.
- the tungsten film can be deposited by the CVD method or a sputtering method.
- the titanium nitride film and the metal film lying in the other areas than the contact holes 17 , 17 a are removed, for example, by the CMP method so as to form the plugs 18 inside the contact holes 17 , 17 a.
- the metal film is processed through the etching, using a patterned resist film as a mask, thereby forming the wires 19 .
- the semiconductor integrated circuit device of the embodiment 1 is formed virtually completely. Further, the upper layer wires may be formed as needed.
- the high dielectric constant insulating film 7 on the diffusion regions 12 b of the MIS transistors in the logic region A 2 and I/O region A 3 is removed, and, on the surfaces thereof, the silicide layers 14 are formed to thereby lower the resistances of diffusion regions 12 b and increase the operation speed.
- the silicide layers 14 are not formed on the diffusion regions 12 b of the MIS transistors in the memory region A 1 , and the diffusion regions 12 b are covered with the high dielectric constant insulating film 7 , which makes it possible to prevent damage to the semiconductor substrate 1 during forming of the spacers 13 , silicide layers 14 , and contact holes 17 , and to reduce the junction leakage currents flowing across the memory cells.
- FIG. 20 and FIG. 21 Another example of an semiconductor integrated circuit device representing an embodiment 2 will be described with reference to the sectional views of the major part of the semiconductor substrate, illustrated in FIG. 20 and FIG. 21 .
- FIG. 20 illustrates the n-channel MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 , which has completed forming of the silicide layers 14 through the self-aligning process.
- the gate insulating films 8 , 9 , gate electrodes 11 , n-type semiconductor regions (diffusion regions) 12 a , 12 b , spacers 13 , and silicide layers 14 are formed in the same manner as the manufacturing method already described for embodiment 1 with reference to FIG. 1 through FIG. 15 .
- the diffusion regions 12 b of the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 are formed through self-aligning relative to the spacers 13 ; accordingly, the widths of the diffusion regions 12 b of the MIS transistors in the logic region A 2 and I/O region A 3 become larger than the widths of the diffusion regions 12 b of the MIS transistors in the memory region A 1 .
- the widths of the spacers 13 are the same in the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 , the distances from the gate electrodes 11 to the device isolation sections of the MIS transistors in the logic region A 2 and I/O region A 3 become larger than the distances from the gate electrodes 11 to the device isolation sections of the MIS transistors in the memory region A 1 .
- FIG. 21 illustrates the MIS transistors in the memory region A 1 , logic region A 2 , and I/O region A 3 , in which the forming of the wires 19 has been completed through the subsequent process.
- the contact holes 17 are formed in the interlayer insulating film 16 .
- the contact holes 17 are formed by using the high dielectric constant insulating film 7 , that is formed on the same layer as the gate insulating film 8 , as an etching stopper layer for the interlayer insulating film 16 . Thereafter, the contact holes 17 a that reach the diffusion regions 12 b of the MIS transistors are formed by removing the high dielectric constant insulating film 7 lying on the bottoms of the contact holes 17 by sputter etching.
- the SAC insulating film 15 may not be formed over the semiconductor substrate 1 .
- the high dielectric constant insulating film 7 on the same layer as the gate insulating film 8 functions as an etching stopper layer for the interlayer insulating film 16 , even if parts of the contact holes 17 are formed on the silicon oxide film 3 forming the device isolation sections because the alignment margin in the memory region A 1 is comparably small, the silicon oxide film 3 can be prevented from being shaved.
- FIG. 22 Another example of a semiconductor integrated circuit device representing an embodiment 3 will be described by reference to the sectional view of the major part of the semiconductor substrate, illustrated in FIG. 22 .
- FIG. 22 illustrates the n-channel MIS transistor in the memory region A 1 of the semiconductor integrated circuit device.
- An n-channel MIS transistor Q 5 is formed, in the same manner as the n-channel MIS transistor Q 1 illustrated in FIG. 4 in the embodiment 1, in an active region surrounded by device isolation sections.
- a pair of n-type semiconductor regions 12 forms the source and drain of the n-channel MIS transistor Q 5
- the high dielectric constant insulating film 7 forms the gate insulating film 8 .
- the contact holes 17 a are formed through the high dielectric constant insulating film 7 on the same layer as the gate insulating film 8 formed to cover substantially the whole surface of the semiconductor substrate 1 , the insulating film 15 , and the interlayer insulating film 16 .
- the wires 19 are connected to a pair of the n-type semiconductor regions 12 through the plugs 18 embedded in the contact holes 17 a.
- the gate electrode 11 is formed in a laminated structure in which a silicon germanium layer 20 and a polycrystalline silicon film 21 are deposited sequentially from the lower layer.
- the solid solubility of silicon germanium conductive impurities is higher than that of silicon; therefore, by increasing the carrier density in the silicon germanium layer 20 , it will be possible to prevent depletion of the carriers in the gate electrode 11 and to reduce the contact resistances. And, by forming the polycrystalline silicon film 21 on the upper layer of the silicon germanium layer 20 , it will be possible to prompt the silicification reaction and to form the silicide layer 14 on the gate electrode 11 .
- the embodiment 3 is directed to a case in which the invention is applied to a MIS transistor in the memory region A 1 ; however, it is also possible to apply the invention to the MIS transistors in the logic region A 2 and I/O region A 3 , and to form the gate electrode 11 in a structure in which the silicon germanium layer 20 and polycrystalline silicon film 21 are laminated sequentially from the lower layer.
- the invention is applied to n-channel MIS transistors in the above-described embodiments; however, it can be applied as well to p-channel MIS transistors.
- a circuit region to which a high-speed performance is desired for example, the logic region and I/O region
- it is possible to achieve high-speed performance by removing the high dielectric constant insulating film on the semiconductor region forming the sources and drains of the MIS transistors, and by forming the silicide layers of a low resistance on the surface of the semiconductor region.
- a circuit region to which a high reliability is desired for example, the memory region
Abstract
A method is used to form a circuit to achieve a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device containing MIS transistors, in which the gate insulating film is made of a high dielectric constant insulating film. In the method, the high dielectric constant insulating film is removed on the diffusion regions of the MIS transistors in the logic region and I/O region, and suicide layers of a low resistance are formed on the surfaces of the diffusion regions. In the memory region, on the other hand, the silicide layers are not formed on the diffusion regions of the MIS transistors, and the diffusion regions are covered with the high dielectric constant insulating film, thereby preventing damage to the semiconductor substrate during forming of the spacers, silicide layers, and contact holes.
Description
- The present invention relates to a technique for use in the manufacture of a semiconductor integrated circuit device; and more specifically, the invention relates to a technique that is effective for application to a semiconductor integrated circuit device including a short channel MIS (metal insulator semiconductor) having a gate length, i.e. the width of the gate electrode, which is less than 0.1 μm.
- The film thickness of the gate insulating film in a MIS transistor having a gate length which is less than 0.07 μm is presumed to be less than 1.2 nm. However, thinning a conventionally used silicon oxide film for use in the gate insulating film will cause the leakage current to exceed 10 A/cm2, which involves an increase in the standby current, thereby creating a problem.
- Accordingly, a trial has been conducted using an insulating film having a comparably high relative dielectric constant (hereunder referred to as a high dielectric constant insulating film), for example, an alumina film having a relative dielectric constant which is about 7 to 11 for the gate insulating film, and in which the effective film thickness is reduced while maintaining the physical film thickness at 1.5 nm or more. Here, the effective film thickness signifies an equivalent silicon oxide film thickness in consideration of the relative dielectric constant.
- As an example, the publication IEDM (International Electron Device Meetings in an article entitled “80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications” at pp.223-226, 2000) discloses the performance characteristic of a MIS transistor having a gate insulating film made of an alumina film, with a gate length of less than 0.1 μm.
- As the integration of semiconductor devices increases, the MIS transistor is being made still finer according to the scaling law; and, accompanied with this, the resistances of the gate, source, and drain regions increase, thus leading to a problem in that the micro-structuring of the MIS transistor does not provide a high-speed performance. And, in the MIS transistor having a gate length of less than 0.2 μm, for example, a high-speed performance has been pursued by silicifying the conductive film forming the gate, as well as the semiconductor regions forming the sources and drains.
- For example, in order to form silicide layers on the surfaces of the semiconductor regions forming sources and drains, a method is employed which removes an insulating film on the same layer as a gate insulating film on the substrate, for example, by reactive etching, and, thereafter, forms silicide layers of a low resistance on the surfaces of the semiconductor regions forming sources and drains by use of a self-aligning method. The above-mentioned reactive etching is one example of dry etching techniques typically used in a semiconductor manufacturing process, in which etching through a chemical reaction is performed by utilizing a chemically active excited activator. This technique will restrain etching damage so as to achieve a comparably high etching selection ratio.
- However, the inventor of this invention has examined the technique used in the manufacture of a MIS device using a high dielectric constant insulating film for the gate insulating film, and it was confirmed clearly that with the reactive etching, it is difficult to remove the high dielectric constant insulating film, and this leads to an impossibility of silicifying the semiconductor regions forming sources and drains.
- As a means to solve the above problem that hinders manufacturing a high-speed MIS device, the technique of sputter etching has been examined for use in physically removing a high dielectric constant insulating film on the semiconductor regions forming sources and drains. The result shows that sputter etching is likely to damage the substrate, and, thereby, this invites the lowering of the reliability of the MIS transistor. As an example, applying sputter etching to memory cells tends to create a problem that increased junction leakage currents and retention data errors, and so forth, are caused.
- An object of the present invention is to provide a technique that makes it possible to form a circuit to accomplish a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device having plural types of MIS transistors, in which the gate insulating film is made of a high dielectric constant insulating film.
- The above and other objects and novel features of the invention will become apparent from the following descriptions and the accompanying drawings.
- The typical aspects of the invention disclosed in this application will be summarized as follows.
- (1) The method of manufacture of a semiconductor integrated circuit device includes the steps of: preparing a semiconductor substrate of a first conductive type, having a first region and a second region on a surface thereof; forming plural trenches on the surface of the semiconductor substrate in the first region and the second region, and forming a first insulating film inside the plural trenches; forming a second insulating film having a relative dielectric constant that is higher than that of the first insulating film on the surface of the semiconductor substrate in the first region and the second region; forming a first conductive piece on the second insulating film in the first region, and forming a second conductive piece on the second insulating film in the second region; introducing first impurities of a second conductive type opposite to the first conductive type into the surface of the semiconductor substrate, in a region of both ends of the first conductive piece and a region of both ends of the second conductive piece; removing the second insulating film, except at least a lower layer of the first conductive piece and the second region; depositing a high melting point metal film to overlie the semiconductor substrate; and selectively forming a silicide layer in a region between the first conductive piece on the surface of the semiconductor substrate and the first insulating film, in the first region.
- (2) The method of manufacture of a semiconductor integrated circuit device further includes, in addition to the steps included in the above-described manufacturing method (1), the steps of: depositing a third insulating film in the first and second regions; applying etching to the third insulating film to form a first contact hole in a region between the first conductive piece and the first insulating film, in the first region; applying etching to the third insulating film to form a second contact hole in a region between the second conductive piece and the first insulating film, in the second region; and forming a third conductive piece in the first contact hole, and a fourth conductive piece in the second contact hole, in which the distance between the first conductive piece and the first insulating film in the first region is larger than the distance between the second conductive piece and the first insulating film in the second region.
-
FIG. 1 is a block diagram of a semiconductor integrated circuit device representing one embodiment of the invention; -
FIG. 2 is an equivalent circuit diagram of a DRAM cell formed in a memory region; -
FIG. 3 is an equivalent circuit diagram of a SRAM cell formed in a memory region; -
FIG. 4 is a sectional view of a major part of the semiconductor substrate, which illustrates an n-channel MIS transistor formed in a memory region; -
FIG. 5 is a sectional view of a major part of the semiconductor substrate, which illustrates the n-channel MIS transistor formed in a logic region; -
FIG. 6 is a sectional view of a major part of the semiconductor substrate, which illustrates the n-channel MIS transistor formed in an I/O region; -
FIG. 7 is a sectional view of a major part of the semiconductor substrate, which illustrates the n-channel MIS transistor forming a capacitance element; -
FIG. 8 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in a method of manufacturing the semiconductor integrated circuit device according to one embodiment of the invention; -
FIG. 9 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 10 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 11 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 12 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 13 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 14 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 15 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 16 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 17 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 18 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 19 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the one embodiment of the invention; -
FIG. 20 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing a semiconductor integrated circuit device according to a second embodiment of the invention; -
FIG. 21 is a sectional view of a major part of the semiconductor substrate, which illustrates a step in the method of manufacturing the semiconductor integrated circuit device according to the second embodiment of the invention; and -
FIG. 22 is a sectional view of a major part of the semiconductor substrate, illustrating an n-channel MIS transistor formed in a memory region, according to a third embodiment of the invention. - The embodiments of the invention will be described in detail with reference to the accompanying drawings. In all the drawings, those members having the same functions are identified by the same symbols, and repetitive descriptions thereof will be omitted.
-
FIG. 1 is a block diagram showing one example of the semiconductor integrated circuit device according to one embodiment of the invention. First, a general outline of the construction of the semiconductor integrated circuit device of theembodiment 1 will be described with reference to the drawing. - The semiconductor integrated circuit device is roughly divided into a memory region, logic region, and I/O (Input/Output interface) region.
- The memory region A1 has 2N+M memory cells MC (or, simply cells) arrayed, each of which memorizes, for example, one bit of binary information, so that the memory region A1 is capable of memorizing 2N+M bits of information. The memory cells MC are arrayed two-dimensionally in a matrix structure, among which a memory cell MC is accessed by enabling each one of the selection lines L1, L2 in the row and column directions to select the memory cell MC lying at the intersection thereof. Assuming that the number of selection lines L1 in the row direction is 2N and the number of the selection lines L2 in the column direction is 2M, the number of the circuits to drive the memory cells is 2N+2M. The memory region A1 is called a memory cell array, a memory matrix, a memory array, or simply an array. And, the selection line L1 in the row direction is called a row line, X line, or word line; while, the selection line L2 in the column direction is called a column line, Y line, or data line.
- The logic region A2 is an associated circuit block that controls the memory region A1 on the basis of the control signals or data supplied to the I/O region A3, and it exchanges data with the memory region A1. One of the typical circuit blocks is a decoder, for example. The decoders constitute a logic circuit group that receives N pairs and M pairs of address signals from the address buffers inside the I/O region A3, and selects one row line among the 2N row lines and one column line among 2M column lines. The drivers connected to the outputs of individual decoders drive the row lines and the column lines. It also includes an I/O control circuit that controls the exchange of data, and so forth.
- The I/O region A3 is a circuit block that converts the control signals and the write data inputted from the outside into internal signals and operates to transfer the results to the logic region A2, and it outputs to the outside the read data that is taken out to the logic region A2 from the memory region A1. One of the typical circuit blocks is an address buffer, for example. The address buffers are circuits that receive (N+M) address input signals for appointing cell selection addresses inside the memory region A1, and they generate N pairs and M pairs of internal address signals. It also includes a data I/O circuit, write control circuit or control block circuit, and so forth.
- Next, a memory cell arranged in the memory region A1 will be described as an example.
FIG. 2 illustrates an equivalent circuit of a memory cell of a DRAM (Dynamic Random Access Memory); while,FIG. 3 illustrates an equivalent circuit of a memory cell of a SRAM (Static Random Access Memory). In addition to these, memory cells can be cited which constitute a logic consolidated memory having memory circuits and logic circuits formed on one substrate, and a nonvolatile memory, etc., however, the explanations of these will be omitted. - As shown in
FIG. 2 , a DRAM cell is composed of a MIS transistor Q that performs as a switch, and a capacitor C that stores information in the form of a charge. The DRAM cell stores information on the basis of whether the capacitor C holds a charge or not, that is, whether the terminal voltage across the capacitor C is high or low, in correspondence with the binary information “1”, “0”. A data write operation involves the applying of a voltage corresponding to the data from the outside to the cell. A data read operation involves taking out information indicating whether the capacitor C holds a charge or not to the outside of the cell, in correspondence with the high or low level of the voltage, and checking the information. - As shown in
FIG. 3 , a SRAM cell is composed of a flip-flop circuit that operates to store data and two transfer MIS transistors Qt. By applying a voltage to the word line WL to turn on the transfer MIS transistors Qt, data is exchanged between the data line pair D, /D and the flip-flop circuit. The flip-flop circuit is configured with two inverters, such that the input of one inverter is connected to the output of the other inverter, and the output of the one is connected to the input of the other. The inverters are made up of load elements Lo and drive MIS transistors Qd. The load element Lo can be a MIS transistor or a resistance element, for example, a polycrystalline silicon film. - During data writing, the high voltage (H) is applied to one of the data line pair D, /D, and the low voltage (L) is applied to the other to supply these voltages to a pair of nodes N1, N2. The two combinations of these voltages to be given (D, /D are given H, L or L, H, respectively) are associated with the binary write data. The data reading is performed by detecting the voltages appearing on the data line pair D, /D in correspondence with the combinations of the high and low levels of the voltages at the nodes N1, N2.
- Next, an example of the semiconductor integrated circuit device representing the
embodiment 1 will be described with reference to sectional views of a major part of the semiconductor substrate, as illustrated inFIG. 4 throughFIG. 7 .FIG. 4 illustrates an n-channel MIS transistor formed in the memory region;FIG. 5 illustrates the n-channel MIS transistor formed in the logic region;FIG. 6 illustrates the n-channel MIS transistor formed in the I/O region; andFIG. 7 illustrates the n-channel MIS transistor forming a capacitance element. - First, an n-channel MIS transistor Q1 formed in the memory region will be described with reference to
FIG. 4 . As an example, the n-channel MIS transistor Q1 can be identified as the selection MIS transistor Q which forms a constituent element of the DRAM cell mentioned with reference toFIG. 2 , and the transfer MIS transistor Qt and the drive MIS transistor Qd which form constituents of the SRAM cell mentioned with reference toFIG. 3 . The threshold voltage (Vth) of the n-channel MIS transistor Q1 is comparably high, which can be regarded as, for example, about 0.4 Volt. In case of using two kinds of supply voltages, for example, the operation voltage (Vcc) applied to the n-channel MIS transistor Q1 is a low voltage, which can be set to, for example, about 0.85 Volt. - The n-channel MIS transistor Q1 is formed in an active region that is surrounded by device isolation sections formed on a p-
type semiconductor substrate 1. The device isolation sections are made up ofshallow trenches 2 formed on thesemiconductor substrate 1, and asilicon oxide film 3 embedded therein. On the surface of thesemiconductor substrate 1, a pair of n-type semiconductor regions 12 forms the source and the drain. - A
gate insulating film 8, that is formed of a high dielectric constantinsulating film 7, is formed on thesemiconductor substrate 1, on which there is a gate electrode (conductive piece) 11 formed of apolycrystalline silicon film 10. The high dielectric constantinsulating film 7 is formed on substantially the whole surface of the active regions and the device isolation sections overlying thesemiconductor substrate 1. A spacer (sidewall insulating film) 13, that is made of, for example, a silicon oxide film, is formed on the sidewall of thegate electrode 11, and asilicide layer 14 is formed on thegate electrode 11. - To cover substantially the whole surface of the
semiconductor substrate 1, a SAC (self-aligned contact) insulatingfilm 15 and aninterlayer insulating film 16 are formed in order from the lower layer. TheSAC insulating film 15 can be made of, for example, a silicon nitride film; and, theinterlayer insulating film 16 can be made of, for example, a silicon oxide film. TheSAC insulating film 15 functions as an etching stopper layer for theinterlayer insulating film 16. - However, in case the high dielectric constant
insulating film 7 can be used as an etching stopper layer for theinterlayer insulating film 16, it is not necessary to form theSAC insulating film 15. - Contact holes 17 a are formed through the
interlayer insulating film 16, the insulatingfilm 15, and the high dielectric constantinsulating film 7 on the same layer as thegate insulating film 8, so as to reach a pair of the n-type semiconductor regions 12.Wires 19 are connected to a pair of the n-type semiconductor regions 12 through plugs (conductive pieces) 18 buried in the contact holes 17 a. For the shape of the hole used to bury theplug 18, a circular contact hole is preferred, because of the necessity of reducing the parasitic capacitance. However, a slot shape may be adopted, which is formed so as to bridge the n-type semiconductor regions 12 forming the source and the drain and the device isolation sections. In this case, conductive films to be buried in this slot can also be used as local wirings. - Next, an n-channel MIS transistor Q2 that is formed in the logic region will be described with reference to
FIG. 5 . The threshold voltage (Vth) of the n-channel MIS transistor Q2 is comparably low, which can be regarded as, for example, about 0.1 Volt. In case of using two kinds of supply voltages, for example, the operation voltage (Vcc) applied to the n-channel MIS transistor Q2 is a low voltage, which can be set to, for example, about 0.85 Volt. - The n-channel MIS transistor Q2 is formed, in the same manner as the n-channel MIS transistor Q1, in the active region surrounded by the device isolation sections formed on the p-
type semiconductor substrate 1. On the surface of thesemiconductor substrate 1, a pair of the n-type semiconductor regions 12 forms the source and the drain. Further, thegate insulating film 8, that is formed of the high dielectric constantinsulating film 7, is formed on thesemiconductor substrate 1, on which thegate electrode 11 formed of thepolycrystalline silicon film 10 is formed. Thespacer 13 and thesilicide layer 14 are formed on the sidewall and on the upper surface of thegate electrode 11, respectively. - However, the high dielectric constant
insulating film 7 is formed only in a region surrounded by thegate electrode 11, thespacer 13, and thesemiconductor substrate 1, which makes up thegate insulating film 8. The silicide layers 14 for lowering the resistance are formed on a pair of the n-type semiconductor regions 12. - To cover substantially the whole surface of the
semiconductor substrate 1, theSAC insulating film 15 and theinterlayer insulating film 16 are formed in order from the lower layer. Contact holes 17 are formed through theinterlayer insulating film 16 and the insulatingfilm 15 so as to reach the silicide layers 14 on a pair of the n-type stype semiconductor regions 12.Wires 19 are connected to the silicide layers 14 on a pair of the n-type semiconductor regions 12 through theplugs 18 buried in the contact holes 17. - Next, an n-channel MIS transistor Q3, that is formed in the I/O region, will be described with reference to
FIG. 6 . The threshold voltage (Vth) of the n-channel MIS transistor Q3 is comparably high, which can be regarded as, for example, about 0.4 Volt. In case of using two kinds of supply voltages, for example, the operation voltage (Vcc) applied to the n-channel MIS transistor Q3 is a high voltage, which can be set to, for example, about 1.5 Volt. - The n-channel MIS transistor Q3 is formed, in the same manner as the n-channel MIS transistor Q1, in the active region surrounded by the device isolation sections that are formed on the p-
type semiconductor substrate 1. On the surface of thesemiconductor substrate 1, a pair of the n-type semiconductor regions 12 forms the source and the drain. - However, a
gate insulating film 9, having a laminated structure made of asilicon oxide film 6 and the high dielectric constantinsulating film 7, is formed on thesemiconductor substrate 1. Thegate electrode 11 of thepolycrystalline silicon film 10 is formed on thegate insulating film 9. And, the laminated layer (thesilicon oxide film 6 and the high dielectric constant insulating film 7) is formed only in a region surrounded by thegate electrode 11, thespacer 13, and thesemiconductor substrate 1, which makes up thegate insulating film 9. The silicide layers 14 are formed on a pair of the n-type semiconductor regions 12. - To cover substantially the whole surface of the
semiconductor substrate 1, theSAC insulating film 15 and theinterlayer insulating film 16 are formed in order from the lower layer. The contact holes 17 are formed through theinterlayer insulating film 16 and the insulatingfilm 15 so as to reach the silicide layers 14 on a pair of the n-type semiconductor regions 12. Thewires 19 are connected to the silicide layers 14 on a pair of the n-type semiconductor regions 12 through theplugs 18 buried in the contact holes 17. - Next, an n-channel MIS transistor Q4, forming the capacitance element will be described with reference to
FIG. 7 . In case of using two kinds of supply voltages, for example, the operation voltage (Vcc) applied to the n-channel MIS transistor Q4 is a low voltage, which can be set to, for example, about 0.85 Volt. - The n-channel MIS transistor Q4 has substantially the same structure as the n-channel MIS transistor Q1. However, in the active region that forms the n-channel MIS transistor Q4, an n-well 4 a can be formed, in addition to a p-well of the same conductive type as the
semiconductor substrate 1. And, the operation voltage (Vcc) is applied to thegate electrode 11, and a pair of the n-type semiconductor regions 12 is connected to the ground voltage.TABLE 1 Memory Capacitance I/O region Logic region region element Vcc 1.5 V 0.85 V 0.85 V 0.85 V Vth High (0.4 V) Low (0.1 V) High (0.4 V) — Gate insulating High-k/SiO High-k High-k High-k film Silicide layer Included Included Not included Included SAC insulating SiN SiN SiN or SiN film (Optional) (Optional) High-k (Optional) Shape of Circular Circular Circular or Circular contact hole slot
High-k: high dielectric constant insulating film
SiO: silicon oxide film
SiN: silicon nitride film
- Table 1 gives a brief summary of the construction of the MIS transistor in the memory region, the MIS transistor in the logic region, the MIS transistor in the I/O region, and the MIS transistor forming the capacitance element.
- In the MIS transistor in the memory region, the MIS transistor in the logic region, and the MIS transistor forming the capacitance element, to which a low voltage is applied in correspondence with the two kinds of supply voltages, the gate insulating film is made of a high dielectric constant insulating film; whereas, in the MIS transistor in the I/O region, the gate insulating film is made of a laminated film composed of a silicon oxide film and a high dielectric constant insulating film.
- The silicide layers are formed on the upper surfaces of a pair of the n-type semiconductor regions that form the sources and the drains of the MIS transistors in the logic region, MIS transistors in the I/O region, and MIS transistors forming the capacitance elements; however, the silicide layers are not formed on the upper surfaces of a pair of the n-type semiconductor regions that form the sources and the drains of the MIS transistors in the memory region.
- When the circumstances need the SAC technique that permits an alignment dislocation between the contact holes and the gate electrode, the SAC insulating film is formed beneath the interlayer insulating film, which has a high etching selection ratio relative to the interlayer insulating film and functions as an etching stopper layer. For example, the interlayer insulating film is formed of a silicon oxide film, and the SAC insulating film is formed of a silicon nitride film. When the circumstances do not need the SAC technique (described in the embodiment 2), the SAC insulating film is not formed; however, the high dielectric constant insulating film of the same layer as the gate insulating film can serve as an etching stopper layer.
- For the shape of the hole in which the plug is buried, a circular contact hole is preferred, because of the necessity of reducing the parasitic capacitance in any MIS transistors. However, the hole in the memory region may have a slot form as well.
- Next, one example of the method of manufacturing a semiconductor integrated circuit device according to the
embodiment 1 will be explained in the processing order with reference to the sectional views of a major part of the semiconductor substrate, as illustrated inFIG. 8 throughFIG. 19 . It is assumed that the semiconductor circuit device is supplied with two kinds of supply voltages, the memory region and the logic region are given a low voltage, and the I/O region is given a high voltage. - As shown in
FIG. 8 , first asemiconductor substrate 1 made of a p-type silicon monocrystal with a specific resistance of about 10 Ωcm is prepared, and theshallow trenches 2 are formed on the principal plane of thesemiconductor substrate 1. Thereafter, a thermal oxidation processing is applied to thesemiconductor substrate 1, and thesilicon oxide film 3 is deposited to overlie thesemiconductor substrate 1. Then, the deposited layer is polished using a CMP (chemical mechanical polishing) method so as to leave thesilicon oxide film 3 inside theshallow trenches 2, thereby forming the device isolation sections. Next, a heat treatment is applied to thesemiconductor substrate 1 at a temperature of about 1000° C. to thereby fasten thesilicon oxide film 3 embedded in the device isolation sections. - Next, boron ions are implanted into the
semiconductor substrate 1, as p-type impurities, to form the p-type well 4. Subsequently, ions of impurities are implanted to form a punch-throughstopper layer 5, thereby restraining the short channel effect. Then, after the surface of thesemiconductor substrate 1 is washed with an aqueous solution of the hydrofluoric acid system, thesilicon oxide film 6, having a thickness of about 1.5 nm, is formed on the surface of thesemiconductor substrate 1. Thesilicon oxide film 6 can be formed by a thermal oxidation method or a thermal CVD (chemical vapor deposition) method. - Next, as shown in
FIG. 9 , thesilicon oxide film 6 is removed from the memory region A1 and logic region A2 using a patterned resist film as a mask, thereby leaving thesilicon oxide film 6 on the I/O region A3. - Next, as shown in
FIG. 10 , the high dielectric constantinsulating film 7, for example, an alumina film or a titanium oxide film, is formed to overlie thesemiconductor substrate 1. The high dielectric constantinsulating film 7 can be deposited by means of the sputtering method. The thickness of the high dielectric constantinsulating film 7, which is formed to overlie thesemiconductor substrate 1, is set so that the effective thickness thereof becomes about 1 nm. In case of an alumina film or a titanium oxide film, the film is deposited to about 2 nm thick in consideration of the relative dielectric constant. Thereby, agate insulating film 8, that is made of the high dielectric constantinsulating film 7 having an effective film thickness of about 1 nm, is formed in the memory region A1 and logic region A2, to which a low voltage is applied; and, thegate insulating film 9, that is composed of a laminated film of thesilicon oxide film 6 and the high dielectric constantinsulating film 7 having the effective film thickness of about 2.5 nm, is formed in the I/O region A3, to which a high voltage is applied. - Next, as shown in
FIG. 11 , thepolycrystalline silicon film 10, with impurities added, is deposited by the CVD method, to overlie thesemiconductor substrate 1. The thickness of thepolycrystalline silicon film 10 is about 140 nm, and the sheet resistance thereof is about 100 Ω/□. Next, thepolycrystalline silicon film 10 is etched using a patterned resist film as a mask to form thegate electrodes 11 of the MIS transistors in the memory region A1, logic region A2, and I/O region A3. Thereafter, dry oxidation processing of about 800° C. is applied to thesemiconductor substrate 1. - Next, as shown in
FIG. 12 , the ion implantation of n-type impurity, for example, arsenic, is applied to the p-well 4, using thegate electrodes 11 as a mask, thereby formingdiffusion regions 12 a that constitute parts of the sources and the drains of the MIS transistors in the memory region A1, logic region A2, and I/O region A3. The arsenic ions are implanted under theenergy 3 keV and thedose 1×1015 cm−2. Although not illustrated here, the ion implantation of p-type impurity, for example, boron, may be applied to the p-well 4, using thegate electrodes 11 as a mask, thereby forming pocket regions underneath thediffusion regions 12 a, which effect to restrain expansions of the depletion layers in the source and drain regions, to thereby suppress punch through. - Next, the silicon oxide film is deposited by the CVD method so as to overlie the
semiconductor substrate 1, and then the silicon oxide film is etched back by plasma etching, thereby forming thespacers 13 on the sidewalls of thegate electrodes 11 of the MIS transistors in the memory region A1, logic region A2, and I/O region A3. In the plasma etching, the high dielectric constantinsulating film 7 functions as an etching stopper layer, which prevents damage to thesemiconductor substrate 1. - Next, as shown in
FIG. 13 , the ion implantation of an n-type impurity, for example, arsenic, is applied to the p-well 4, using thegate electrodes 11 and thespacers 13 as a mask, thereby formingdiffusion regions 12 b that constitute the other parts of the sources and the drains of the MIS transistors in the memory region A1, logic region A2, and I/O region A3. The arsenic ions are implanted under the energy 45 keV and thedose 2×1015 cm−2. - Next, as shown in
FIG. 14 , after covering the memory region A1 with a resist film, the high dielectric constantinsulating film 7 in the logic region A2, that is exposed over thesemiconductor substrate 1, and the laminated film composed of thesilicon oxide film 6 and the high dielectric constantinsulating film 7 in the I/O region A3 are removed by sputter etching. Thereby, the surfaces of thediffusion regions 12 b in the logic region A2 and I/O region A3 are exposed. The sputter etching is not applied to the high dielectric constantinsulating film 7 in the memory region A1 so as to leave it over thesemiconductor substrate 1, thereby preventing damage to thesemiconductor substrate 1 in the memory region A1. - And, after removing the resist film, a high melting point metal film, for example, a cobalt film of about 10 to 20 nm thick, is deposited by the sputtering method so as to overlie the
semiconductor substrate 1. - Next, as shown in
FIG. 15 , the heat treatment of 500 to 600° C. is applied to thesemiconductor substrate 1 to form the silicide layers 14 selectively on the surfaces of thegate electrodes 11 of the MIS transistors in the memory region A1, on the surfaces of thegate electrodes 11 and thediffusion regions 12 b of the MIS transistors in the logic region A2, and on the surfaces of thegate electrodes 11 and thediffusion regions 12 b of the MIS transistors in the I/O region A3. After this processing, the un-reacted cobalt film is removed by wet etching; and, subsequently, heat treatment of 700 to 800° C. is applied to thesemiconductor substrate 1 to reduce the resistance of the silicide layers 14. The thickness of the silicide layers 14 after the heat treatment is about 30 nm, and the sheet resistance thereof is about 4 Ω/□. To form the silicide layers 14 on the surfaces of thediffusion regions 12 b in the logic region A2 and I/O region A3 lowers the resistance of thediffusion regions 12 b, which serves to increase the operation speed of the logic circuit, especially in the logic region A2. On the other hand, by not forming the silicide layers on the surfaces of thediffusion regions 12 b in the memory region A1, damage to thesemiconductor substrate 1 in the memory region A1 is prevented. - Next, as shown in
FIG. 16 , theSAC insulating film 15, for example, a silicon nitride film, is deposited by the plasma CVD method so as to overlie thesemiconductor substrate 1. When the alignment margin of the device isolation sections and the contact holes formed at the subsequent process are insufficient, the SAC technique that permits an alignment dislocation is used. - Next, as shown in
FIG. 17 , theinterlayer insulating film 16, for example, a silicon oxide film, is formed to overlie thesemiconductor substrate 1. Subsequently, theinterlayer insulating film 16 is etched by using a patterned resist film as a mask and by using the insulatingfilm 15 as an etching stopper layer. This etching adopts an etching condition under which the etching speed of theinterlayer insulating film 16 becomes higher than the etching speed of the insulatingfilm 15. Next, the insulatingfilm 15 is etched. This etching adopts the etching condition under which the etching speed of the insulatingfilm 15 becomes higher than the etching speed of the high dielectric constantinsulating film 7, and it makes the high dielectric constantinsulating film 7 function as an etching stopper layer in the memory region A1. - Thus, the contact holes 17 are formed in the logic region A2 and I/O region A3, so as to reach the silicide layers 14 formed on the surfaces of the
diffusion regions 12 b of the MIS transistors, and the contact holes 17 are formed to reach the high dielectric constantinsulating film 7 in the memory region A1. The contact holes 17 can be made circular, with a diameter of about 0.14 μm. - Although not illustrated, the contact holes are simultaneously formed so as to reach the silicide layers 14 on the
gate electrodes 11 of the MIS transistors in the memory region A1, logic region A2, and I/O region A3. - Next, as shown in
FIG. 18 , after covering the logic region A2 and the I/O region A3 with a resist film, the high dielectric constantinsulating film 7 on the bottoms of the contact holes 17 in the memory region A1 is removed by sputter etching, thereby forming the contact holes 17 a that reach thediffusion regions 12 b of the MIS transistors. - Now, the contact holes 17 in the logic region A2 and I/O region A3 and the contact holes 17 a in the memory region A1 may be formed in different processes. The following process may be adopted as an example. The
interlayer insulating film 16 and the insulatingfilm 15 in the logic region A2 and I/O region A3 are sequentially etched using a patterned resist film as a mask so as to form the contact holes 17; and then, theinterlayer insulating film 16, the insulatingfilm 15, and the high dielectric constantinsulating film 7 in the memory region A1 are sequentially etched to form the contact holes 17 a. - Next, as shown in
FIG. 19 , after removing the above resist film, a titanium nitride film is deposited, for example, by the CVD method, so as to overlie thewhole semiconductor substrate 1, including the insides of the contact holes 17, 17 a. Further, a metal film to bury the contact holes 17, 17 a, for example, a tungsten film, is formed. The tungsten film can be deposited by the CVD method or a sputtering method. Subsequently, the titanium nitride film and the metal film lying in the other areas than the contact holes 17, 17 a are removed, for example, by the CMP method so as to form theplugs 18 inside the contact holes 17, 17 a. - Subsequently, after forming a metal film, for example, a tungsten film, to overlie the
semiconductor substrate 1, the metal film is processed through the etching, using a patterned resist film as a mask, thereby forming thewires 19. At this stage, the semiconductor integrated circuit device of theembodiment 1 is formed virtually completely. Further, the upper layer wires may be formed as needed. - Thus, according to the
embodiment 1, the high dielectric constantinsulating film 7 on thediffusion regions 12 b of the MIS transistors in the logic region A2 and I/O region A3 is removed, and, on the surfaces thereof, the silicide layers 14 are formed to thereby lower the resistances ofdiffusion regions 12 b and increase the operation speed. On the other hand, the silicide layers 14 are not formed on thediffusion regions 12 b of the MIS transistors in the memory region A1, and thediffusion regions 12 b are covered with the high dielectric constantinsulating film 7, which makes it possible to prevent damage to thesemiconductor substrate 1 during forming of thespacers 13, silicide layers 14, and contact holes 17, and to reduce the junction leakage currents flowing across the memory cells. - Another example of an semiconductor integrated circuit device representing an
embodiment 2 will be described with reference to the sectional views of the major part of the semiconductor substrate, illustrated inFIG. 20 andFIG. 21 . -
FIG. 20 illustrates the n-channel MIS transistors in the memory region A1, logic region A2, and I/O region A3, which has completed forming of the silicide layers 14 through the self-aligning process. In the semiconductor integrated circuit device of theembodiment 2, thegate insulating films gate electrodes 11, n-type semiconductor regions (diffusion regions) 12 a, 12 b,spacers 13, andsilicide layers 14 are formed in the same manner as the manufacturing method already described forembodiment 1 with reference toFIG. 1 throughFIG. 15 . - However, it is possible to set the distances Lb from the
spacers 13 to the device isolation sections of the MIS transistors in the logic region A2 and I/O region A3 so that they are larger than the distances La from the spacers 1l to the device isolation sections of the MIS transistors in the memory region A1, to provide a requested higher integration, and to set the alignment margin between the contact holes 17 and the device isolation sections in the logic region A2 and I/O region A3 to a comparably larger value. - Therefore, the
diffusion regions 12 b of the MIS transistors in the memory region A1, logic region A2, and I/O region A3 are formed through self-aligning relative to thespacers 13; accordingly, the widths of thediffusion regions 12 b of the MIS transistors in the logic region A2 and I/O region A3 become larger than the widths of thediffusion regions 12 b of the MIS transistors in the memory region A1. is Since the widths of thespacers 13 are the same in the MIS transistors in the memory region A1, logic region A2, and I/O region A3, the distances from thegate electrodes 11 to the device isolation sections of the MIS transistors in the logic region A2 and I/O region A3 become larger than the distances from thegate electrodes 11 to the device isolation sections of the MIS transistors in the memory region A1. -
FIG. 21 illustrates the MIS transistors in the memory region A1, logic region A2, and I/O region A3, in which the forming of thewires 19 has been completed through the subsequent process. As illustrated in the drawing, without using the SAC technique, namely, without forming the insulating film that functions as an etching stopper layer (the insulatingfilm 15 in the embodiment 1) for theinterlayer insulating film 16 in the logic region A2 and I/O region A3, the contact holes 17 are formed in theinterlayer insulating film 16. In the memory region A1, on the other hand, the contact holes 17 are formed by using the high dielectric constantinsulating film 7, that is formed on the same layer as thegate insulating film 8, as an etching stopper layer for theinterlayer insulating film 16. Thereafter, the contact holes 17 a that reach thediffusion regions 12 b of the MIS transistors are formed by removing the high dielectric constantinsulating film 7 lying on the bottoms of the contact holes 17 by sputter etching. - Thus, according to the
embodiment 2, in case the alignment margin between the contact holes 17 and the device isolation sections can be taken to be comparably larger in the logic region A2 and I/O region A3, theSAC insulating film 15 may not be formed over thesemiconductor substrate 1. In the memory region A1, on the other hand, since the high dielectric constantinsulating film 7 on the same layer as thegate insulating film 8 functions as an etching stopper layer for theinterlayer insulating film 16, even if parts of the contact holes 17 are formed on thesilicon oxide film 3 forming the device isolation sections because the alignment margin in the memory region A1 is comparably small, thesilicon oxide film 3 can be prevented from being shaved. - Another example of a semiconductor integrated circuit device representing an
embodiment 3 will be described by reference to the sectional view of the major part of the semiconductor substrate, illustrated inFIG. 22 . -
FIG. 22 illustrates the n-channel MIS transistor in the memory region A1 of the semiconductor integrated circuit device. - An n-channel MIS transistor Q5 is formed, in the same manner as the n-channel MIS transistor Q1 illustrated in
FIG. 4 in theembodiment 1, in an active region surrounded by device isolation sections. A pair of n-type semiconductor regions 12 forms the source and drain of the n-channel MIS transistor Q5, and the high dielectric constantinsulating film 7 forms thegate insulating film 8. The contact holes 17 a are formed through the high dielectric constantinsulating film 7 on the same layer as thegate insulating film 8 formed to cover substantially the whole surface of thesemiconductor substrate 1, the insulatingfilm 15, and theinterlayer insulating film 16. Thewires 19 are connected to a pair of the n-type semiconductor regions 12 through theplugs 18 embedded in the contact holes 17 a. - The
gate electrode 11 is formed in a laminated structure in which asilicon germanium layer 20 and apolycrystalline silicon film 21 are deposited sequentially from the lower layer. - The solid solubility of silicon germanium conductive impurities, for example, boron of the p-type impurities, is higher than that of silicon; therefore, by increasing the carrier density in the
silicon germanium layer 20, it will be possible to prevent depletion of the carriers in thegate electrode 11 and to reduce the contact resistances. And, by forming thepolycrystalline silicon film 21 on the upper layer of thesilicon germanium layer 20, it will be possible to prompt the silicification reaction and to form thesilicide layer 14 on thegate electrode 11. - The
embodiment 3 is directed to a case in which the invention is applied to a MIS transistor in the memory region A1; however, it is also possible to apply the invention to the MIS transistors in the logic region A2 and I/O region A3, and to form thegate electrode 11 in a structure in which thesilicon germanium layer 20 andpolycrystalline silicon film 21 are laminated sequentially from the lower layer. - As described above, the invention has been described specifically with reference to embodiments. However, the invention is not limited to the above-described embodiments, and it should be well understood that various changes and variations are possible without a departure from the spirit and scope of the invention.
- For example, the invention is applied to n-channel MIS transistors in the above-described embodiments; however, it can be applied as well to p-channel MIS transistors.
- The typical effects obtained by the invention disclosed in this application will be described briefly.
- In a circuit region to which a high-speed performance is desired, for example, the logic region and I/O region, it is possible to achieve high-speed performance by removing the high dielectric constant insulating film on the semiconductor region forming the sources and drains of the MIS transistors, and by forming the silicide layers of a low resistance on the surface of the semiconductor region. On the other hand, in a circuit region to which a high reliability is desired, for example, the memory region, it is possible to prevent damage to the semiconductor substrate in the processes of forming the spacers, silicide layers, and contact holes, and to attain a high reliability, by not forming the silicide layers on the semiconductor region forming the sources and drains of the MIS transistors, and covering the semiconductor region with the high dielectric constant insulating film.
Claims (12)
1. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) preparing a semiconductor substrate of a first conductivity type, having a logic region and a memory region on a surface thereof;
(b) forming plural trenches on the surface of the semiconductor substrate in the logic region and the memory region, and forming a first insulating film inside the plural trenches;
(c) forming a second insulating film having a relative dielectric constant which is greater than that of the first insulating film on the surface of the semiconductor substrate in the logic region and the memory region;
(d) forming a first conductive piece on the second insulating film in the logic region, and forming a second conductive piece on the second insulating film in the memory region;
(e) introducing first impurities of a second conductivity type, opposite to the first conductivity type, into the surface of the semiconductor substrate, in regions at both ends of the first conductive piece and regions at both ends of the second conductive piece;
(f) removing the second insulating film, except at at least a lower layer of the first conductive piece and at the memory region;
(g) depositing a high melting point metal film to overlie the semiconductor substrate; and
(h) selectively forming a silicide layer in a region between the first conductive piece on the surface of the semiconductor substrate and the first insulating film, in the logic region.
2. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , further comprising, between the steps (e) and (f), the steps of:
(i) forming a third insulating film to overlie the semiconductor substrate; and
(j) applying anisotropic etching to the third insulating film so as to form a first sidewall insulating film on sidewalls of the first conductive piece, and a second sidewall insulating film on sidewalls of the second conductive piece.
3. A method of manufacturing a semiconductor integrated circuit device according to claim 2 , further comprising, between the steps (i) and (j), the step of:
(k) introducing second impurities of the second conductivity type, in a region between the first sidewall insulating film on the surface of the semiconductor substrate and the first insulating film, and a region between the second sidewall insulating film and the first insulating film.
4. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , further comprising, between the steps (b) and (c), the step of:
(1) forming a silicon oxide film on the surface of the semiconductor substrate in the logic region;
wherein, in the logic region, the second insulating film is formed to overlie the semiconductor substrate with intervention of the silicon oxide film, and in the memory region, the second insulating film is formed on the surface of the semiconductor substrate without intervention of the silicon oxide film.
5. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the first and second conductive pieces have a silicon germanium film and a silicon film laminated sequentially from the lower layer.
6. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , further comprising the steps of:
(m) depositing a third insulating film in the logic region and the memory region;
(n) applying etching to the third insulating film to form a first contact hole in a region between the first conductive piece and the first insulating film, in the logic region;
(o) applying etching to the third insulating film to form a second contact hole in a region between the second conductive piece and the first insulating film, in the memory region; and
(p) forming a third conductive piece in the first contact hole, and a fourth conductive piece in the second contact hole.
7. A method of manufacturing a semiconductor integrated circuit device according to claim 6 , wherein a distance between the first conductive piece and the first insulating film in the logic region is larger than a distance between the second conductive piece and the first insulating film in the memory region.
8. A method of manufacturing a semiconductor integrated circuit device according to claim 7 , wherein a part of the second contact hole overlaps with the first insulating film in the memory region.
9. A method of manufacturing a semiconductor integrated circuit device according to claim 7 , wherein the first and third insulating films are made of a silicon oxide film.
10. A method of manufacturing a semiconductor integrated circuit device according to claim 6 , wherein the third insulating film has a silicon nitride film and a silicon oxide film laminated sequentially from the lower layer.
11. A method of manufacturing a semiconductor integrated circuit device according to claim 6 , wherein a plane form of the third conductive piece is smaller than a plane form of the fourth conductive piece.
12. A method of manufacturing a semiconductor integrated circuit device according to claim 6 , further comprising, between the steps (b) and (c), the step of:
(1) forming a silicon oxide film on the surface of the semiconductor substrate in the logic region;
wherein, in the logic region, the second insulating film is formed to overlie the semiconductor substrate with intervention of the silicon oxide film, and in the memory region, the second insulating film is formed on the surface of the semiconductor substrate without intervention of the silicon oxide film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/111,890 US20050186724A1 (en) | 2001-11-20 | 2005-04-22 | Method for manufacturing semiconductor integrated circuit device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001355053A JP2003158195A (en) | 2001-11-20 | 2001-11-20 | Manufacturing method for semiconductor integrated circuit device |
JP2001-355053 | 2001-11-20 | ||
US10/281,189 US6924237B2 (en) | 2001-11-20 | 2002-10-28 | Method for manufacturing semiconductor integrated circuit device |
US11/111,890 US20050186724A1 (en) | 2001-11-20 | 2005-04-22 | Method for manufacturing semiconductor integrated circuit device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/281,189 Continuation US6924237B2 (en) | 2001-11-20 | 2002-10-28 | Method for manufacturing semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050186724A1 true US20050186724A1 (en) | 2005-08-25 |
Family
ID=19166812
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/281,189 Expired - Lifetime US6924237B2 (en) | 2001-11-20 | 2002-10-28 | Method for manufacturing semiconductor integrated circuit device |
US11/111,890 Abandoned US20050186724A1 (en) | 2001-11-20 | 2005-04-22 | Method for manufacturing semiconductor integrated circuit device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/281,189 Expired - Lifetime US6924237B2 (en) | 2001-11-20 | 2002-10-28 | Method for manufacturing semiconductor integrated circuit device |
Country Status (5)
Country | Link |
---|---|
US (2) | US6924237B2 (en) |
JP (1) | JP2003158195A (en) |
KR (1) | KR20030043666A (en) |
CN (1) | CN1316599C (en) |
TW (1) | TWI261894B (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158195A (en) * | 2001-11-20 | 2003-05-30 | Hitachi Ltd | Manufacturing method for semiconductor integrated circuit device |
JPWO2004017418A1 (en) | 2002-08-15 | 2005-12-08 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit device and manufacturing method thereof |
JP2004363234A (en) * | 2003-06-03 | 2004-12-24 | Renesas Technology Corp | Method for manufacturing semiconductor device |
WO2005036651A1 (en) * | 2003-10-09 | 2005-04-21 | Nec Corporation | Semiconductor device and production method therefor |
US7282409B2 (en) * | 2004-06-23 | 2007-10-16 | Micron Technology, Inc. | Isolation structure for a memory cell using Al2O3 dielectric |
JP4693428B2 (en) * | 2005-01-27 | 2011-06-01 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit |
JP4340248B2 (en) * | 2005-03-17 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | Method for manufacturing a semiconductor imaging device |
JP4738178B2 (en) * | 2005-06-17 | 2011-08-03 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US7586158B2 (en) * | 2005-07-07 | 2009-09-08 | Infineon Technologies Ag | Piezoelectric stress liner for bulk and SOI |
US7718496B2 (en) * | 2007-10-30 | 2010-05-18 | International Business Machines Corporation | Techniques for enabling multiple Vt devices using high-K metal gate stacks |
JP2010021295A (en) * | 2008-07-09 | 2010-01-28 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
KR20200054336A (en) * | 2011-12-22 | 2020-05-19 | 인텔 코포레이션 | Semiconductor structure |
DE102018102685A1 (en) * | 2017-11-30 | 2019-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact formation process and associated structure |
CN109037342A (en) * | 2018-08-29 | 2018-12-18 | 广东工业大学 | A kind of transistor, stacked transistors and RF switch chip |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5939744A (en) * | 1995-03-22 | 1999-08-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with x-ray absorption layer |
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
US6210999B1 (en) * | 1998-12-04 | 2001-04-03 | Advanced Micro Devices, Inc. | Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices |
US6303432B1 (en) * | 1999-05-24 | 2001-10-16 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device |
US6333223B1 (en) * | 1998-12-25 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6380589B1 (en) * | 2001-01-30 | 2002-04-30 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator (SOI) tunneling junction transistor SRAM cell |
US6395598B1 (en) * | 1998-12-08 | 2002-05-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6924237B2 (en) * | 2001-11-20 | 2005-08-02 | Renesas Technology Corp. | Method for manufacturing semiconductor integrated circuit device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1155160A (en) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | Method for making of self alignment silicide structural semiconductor device |
JP2751895B2 (en) * | 1995-10-31 | 1998-05-18 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US6022771A (en) * | 1999-01-25 | 2000-02-08 | International Business Machines Corporation | Fabrication of semiconductor device having shallow junctions and sidewall spacers creating taper-shaped isolation where the source and drain regions meet the gate regions |
-
2001
- 2001-11-20 JP JP2001355053A patent/JP2003158195A/en active Pending
-
2002
- 2002-10-28 US US10/281,189 patent/US6924237B2/en not_active Expired - Lifetime
- 2002-10-29 TW TW091132067A patent/TWI261894B/en active
- 2002-11-18 KR KR1020020071512A patent/KR20030043666A/en not_active Application Discontinuation
- 2002-11-19 CN CNB021514321A patent/CN1316599C/en not_active Expired - Fee Related
-
2005
- 2005-04-22 US US11/111,890 patent/US20050186724A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5939744A (en) * | 1995-03-22 | 1999-08-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with x-ray absorption layer |
US6210999B1 (en) * | 1998-12-04 | 2001-04-03 | Advanced Micro Devices, Inc. | Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices |
US6395598B1 (en) * | 1998-12-08 | 2002-05-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6333223B1 (en) * | 1998-12-25 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6303432B1 (en) * | 1999-05-24 | 2001-10-16 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device |
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
US6380589B1 (en) * | 2001-01-30 | 2002-04-30 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator (SOI) tunneling junction transistor SRAM cell |
US6924237B2 (en) * | 2001-11-20 | 2005-08-02 | Renesas Technology Corp. | Method for manufacturing semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
KR20030043666A (en) | 2003-06-02 |
JP2003158195A (en) | 2003-05-30 |
CN1420546A (en) | 2003-05-28 |
US6924237B2 (en) | 2005-08-02 |
CN1316599C (en) | 2007-05-16 |
TW200307342A (en) | 2003-12-01 |
US20030096501A1 (en) | 2003-05-22 |
TWI261894B (en) | 2006-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20050186724A1 (en) | Method for manufacturing semiconductor integrated circuit device | |
KR100983408B1 (en) | Thin film memory, array, and operation method and manufacture method therefor | |
US6713791B2 (en) | T-RAM array having a planar cell structure and method for fabricating the same | |
JP3150362B2 (en) | EPROM virtual ground array | |
US6627924B2 (en) | Memory system capable of operating at high temperatures and method for fabricating the same | |
US5100817A (en) | Method of forming stacked self-aligned polysilicon PFET devices and structures resulting therefrom | |
JP4927321B2 (en) | Semiconductor memory device | |
US6492662B2 (en) | T-RAM structure having dual vertical devices and method for fabricating the same | |
US5909400A (en) | Three device BICMOS gain cell | |
US7265419B2 (en) | Semiconductor memory device with cell transistors having electrically floating channel bodies to store data | |
EP0503904A2 (en) | Contact structure of an interconnection layer placed on a surface having steps and SRAM having a multilayer interconnection and manufacturing method thereof | |
JP2000058675A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPH0613582A (en) | Manufacture of thin film pseudo pfet device | |
US20050158951A1 (en) | Methods of fabricating semiconductor memory devices including different dielectric layers for the cell transistors and refresh transistors thereof | |
JP2646508B2 (en) | Method of fabricating cross-coupling in static write-read memory | |
US7410843B2 (en) | Methods for fabricating reduced floating body effect static random access memory cells | |
JP2589438B2 (en) | Semiconductor memory device and method of manufacturing the same | |
US20020001899A1 (en) | Semiconductor integrated circuit device and a method of manufacturing the same | |
US6894915B2 (en) | Method to prevent bit line capacitive coupling | |
US7045864B2 (en) | Semiconductor integrated circuit device | |
US20050230716A1 (en) | Semiconductor integrated circuit equipment and its manufacture method | |
US5652174A (en) | Unified stacked contact process for static random access memory (SRAM) having polysilicon load resistors | |
US7061032B2 (en) | Semiconductor device with upper portion of plugs contacting source and drain regions being a first self-aligned silicide | |
US20020027227A1 (en) | Semiconductor memory device having a trench and a gate electrode vertically formed on a wall of the trench | |
JP2877069B2 (en) | Static semiconductor memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |