US20040036201A1 - Methods and apparatus of field-induced pressure imprint lithography - Google Patents

Methods and apparatus of field-induced pressure imprint lithography Download PDF

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Publication number
US20040036201A1
US20040036201A1 US10/445,578 US44557803A US2004036201A1 US 20040036201 A1 US20040036201 A1 US 20040036201A1 US 44557803 A US44557803 A US 44557803A US 2004036201 A1 US2004036201 A1 US 2004036201A1
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Prior art keywords
moldable
substrate
mold
molding surface
voltage source
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US10/445,578
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Stephen Chou
Wei Zhang
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Princeton University
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Princeton University
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Priority claimed from US09/618,174 external-priority patent/US6482742B1/en
Priority claimed from US10/046,594 external-priority patent/US20020167117A1/en
Priority claimed from US10/244,276 external-priority patent/US20030080471A1/en
Application filed by Princeton University filed Critical Princeton University
Priority to US10/445,578 priority Critical patent/US20040036201A1/en
Assigned to PRINCETON UNIVERSITY reassignment PRINCETON UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOU, STEPHEN Y., ZHANG, WEI
Publication of US20040036201A1 publication Critical patent/US20040036201A1/en
Priority to US11/928,844 priority patent/US7887739B2/en
Priority to US11/933,170 priority patent/US8852494B2/en
Priority to US12/940,302 priority patent/US20110042861A1/en
Abandoned legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60Releasing, lubricating or separating agents
    • B29C33/62Releasing, lubricating or separating agents based on polymers or oligomers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/36Moulds for making articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/56Compression moulding under special conditions, e.g. vacuum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric
    • G03F9/7053Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C2043/3205Particular pressure exerting means for making definite articles
    • B29C2043/3211Particular pressure exerting means for making definite articles magnets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/56Compression moulding under special conditions, e.g. vacuum
    • B29C2043/568Compression moulding under special conditions, e.g. vacuum in a magnetic or electric field
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B29C2059/023Microembossing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/52Heating or cooling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces

Definitions

  • This invention relates to imprint lithography and, in particular, to imprint lithography wherein electrical or magnetic fields are used to imprint a molding surface onto a moldable surface.
  • the process is particularly useful to provide nanoimprint lithography of enhanced resolution and uniformity over an increased area.
  • Photolithography is a key process in the fabrication of semiconductor integrated circuits and many optical, magnetic and micromechanical devices. Lithography creates a pattern on a thin film carried on a substrate so that, in subsequent process steps, the pattern can be replicated in the substrate or in another material which is added onto the substrate.
  • Conventional lithography typically involves applying a thin film of resist to a substrate, exposing the resist to a desired pattern of radiation, and developing the exposed film to produce a physical pattern. In this approach, resolution is limited by the wavelength of the radiation, and the equipment becomes increasingly expensive as the feature size becomes smaller.
  • Imprint lithography based on a fundamentally different principle, offers high resolution, high throughput, low cost and the potential of large area coverage.
  • imprint lithography a mold with microscale or nanoscale features is pressed into a thin film, deforming the shape of the film according to the features of the mold and forming a relief pattern in the film. After the mold is removed, the thin film can be processed to remove the reduced thickness portions. This removal exposes the underlying substrate for further processing. Details of imprint lithography are described in applicant's U.S. Pat. No. 5,772,905 issued Jun. 30, 1998 and entitled “Nanoimprint Lithography”. The '905 patent is incorporated herein by reference.
  • the usual method of pressing the mold into the thin film involves positioning the mold and the substrate on respective rigid plates of a high precision mechanical press.
  • the process can generate sub-25 nm features with a high degree of uniformity over areas on the order of 12 in 2 . Larger areas of uniformity would be highly advantageous to increase throughput and for many applications such as displays.
  • An alternative method of pressing the mold into the thin film is the technique of fluid pressure imprint lithography described in applicant's U.S. Pat. No. 6,482,742 issued Nov. 19, 2002 and entitled “Fluid Pressure Imprint Lithography”.
  • the molding surface is disposed adjacent the film, the molding surface/film interface is sealed and pressurized fluid is used to force the molding surface into the film. Since the pressure is isostatic, translational and rotational shifts are minimal, and smaller features can be imprinted with high uniformity over larger areas than can be imprinted using mechanical presses.
  • Fluid pressure imprinting has dramatically improved nanoimprint lithography.
  • a further improvement for commercial manufacture would be a method which could provide comparable results without the necessity of sealing the molding surface/film interface.
  • An improved method of imprint lithography involves using field-induced pressure from electric or magnetic fields to press a mold into a substrate having a moldable surface.
  • the method comprises the steps of providing a substrate having a moldable surface, providing a mold having a molding surface and pressing the molding surface and the moldable surface together by electric or magnetic fields to imprint the molding surface onto the moldable surface.
  • the molding surface advantageously comprises a plurality of projecting features of nanoscale extent or separation, but the molding surface can also be a smooth planar surface, as for planarization.
  • the improved method can be practiced without mechanical presses and without sealing the region between the mold and the substrate.
  • FIG. 1 is a schematic flow diagram of the steps in an improved method of imprint lithography
  • FIG. 2 illustrates apparatus for practicing the method of FIG. 1 using an electrical field
  • FIGS. 3A, 3B and 3 C show various substrate constructions for facilitating electrical contact with a substrate conductive layer
  • FIG. 4 shows an alternative apparatus for practicing the method of FIG. 1 without direct electrical contact
  • FIG. 5 illustrates apparatus for practicing the method of FIG. 1 using a magnetic field
  • FIGS. 6A and 6B show exemplary multilayer mold constructions useful for the apparatus of FIGS. 2, 4 and 5 ;
  • FIG. 7 schematically illustrates how the method of FIG. 1 is compatible with a variety of other processing steps.
  • FIG. 1 is a schematic flow diagram of an improved process for imprint lithography using field-induced pressure.
  • An initial step shown in Block A is to provide a mold having a molding surface such as plurality of protruding features and a substrate having a surface of moldable material such as one or more moldable thin films.
  • Protruding features are preferably micrometer scale features and, more advantageously, nanoscale features.
  • the method is highly advantageously where the mold surface has at least two spaced apart protruding features.
  • a moldable material is one which retains or can be hardened to retain the imprint of the protruding features from the mold surface.
  • the next step, shown in Block B, is to place the mold adjacent the moldable surface. If the moldable surface is a thin film that already includes a previously formed pattern, then the pattern of the mold should be carefully aligned with the previous pattern. This can be done by alignment techniques well known in the art.
  • the third step (Block C) is to press the mold onto the moldable surface by field-induced pressure.
  • One method for doing this is to dispose the assembly between conductive layers and apply an electrical field between the layers.
  • Another approach is to dispose the assembly between layers of magnetic material and to apply a magnetic field that will force the layers together.
  • the advantage of field-induced pressure is that the resulting force uniformly pushes the mold onto the moldable surface. Shear or rotational components are de minimus.
  • the mold and/or substrate are flexible rather than rigid, conformation between the mold and the moldable surface is achieved regardless of unavoidable deviations from planarity. The result is an enhanced level of molding resolution, alignment and uniformity over an increased area of the film.
  • the next step shown in Block D is to harden the moldable surface, if necessary, so that it retains the imprint of the mold and then to remove the mold.
  • the process for hardening depends on the material of the moldable surface. Some materials will maintain the imprint with no hardening.
  • Thermoplastic materials can be hardened by preliminarily heating them prior to molding and permitting them to cool after imprint.
  • PMMA for example, can be suitably softened by heating to 120° C. prior to molding and hardened by cooling after imprint.
  • Heat curable materials can be hardened by applying heat during imprint. A heater and/or the use of a heated pressurized fluid can thus effectuate such softening or hardening.
  • Radiation curable materials can be hardened by the application of UV radiation during imprint. Silicon can be softened by UV laser radiation to accept imprinting and hardened by cooling to ambient temperature.
  • the fifth step shown in Block E is optional in some applications. It is to remove contaminants (if any) and excess material from the recesses of the molded surface.
  • the molded surface will typically have raised features and recesses. In many lithographic operations it is desirable to eliminate the material from the recesses so that the underlying substrate is exposed for further processing. This can be conveniently accomplished using reactive ion etching.
  • the imprinted structure itself is a part of a device to be built.
  • the resulting structure is a resist-covered semiconductor substrate with a pattern of recesses extending toward the substrate.
  • Such a structure can be further processed in a variety of ways well-known in the art.
  • the molded film can be used as a mask for the removal of surface layers in exposed regions of the substrate, for doping exposed regions of the substrate or for growing or depositing materials on the exposed regions.
  • FIG. 2 schematically illustrates a first exemplary apparatus 9 for practicing the method of FIG. 1.
  • the apparatus 9 comprises an assembly of a mold 10 having a molding surface 12 and a substrate 20 having a moldable surface 22 .
  • the mold and substrate are disposed with the molding surface 12 adjacent the moldable surface 22 .
  • the mold 10 comprises a body having a molding surface 12 .
  • Surface 12 can include a plurality of protruding features 13 having a desired shape for imprinting onto the moldable surface 22 .
  • the molding surface 12 can be patterned into protruding features 13 of nanoscale dimensions by known techniques such as electron beam lithography.
  • the projecting extent of the protruding features 13 is typically in the range 0.1 nm to 200 ⁇ m.
  • the mold 10 is a multilayer structure comprising a layer of conductive or chargeable material that is distal to the interface between the molding surface and the moldable surface.
  • the term layer as used herein is intended broadly to cover a supported layer, a plate or a composite layer.
  • the substrate 20 is typically a solid substrate and the moldable surface 22 is typically a thin film of polymer, monomer, olgimer or combination thereof that is pliable or can be made pliable to pressure and can retain a pressure-imprinted deformation or pattern.
  • It can be a thermoplastic polymer, such as polycarbonate or polymethyl methacrylate (PMMA), which softens in response to heat.
  • PMMA polymethyl methacrylate
  • it can be a monomer liquid, such as a curable silicone, which hardens with curing.
  • it can be solid silicon which can be liquefied by a UV laser pulse.
  • Polymer thin films are typically applied to the substrate by spraying or spinning.
  • the film does not adhere to the mold surface. If necessary, the mold surface can be coated with a release agent to prevent such adherence.
  • the substrate is a multilayer structure comprising a layer or plate 23 of conductive or chargeable material that is distal to the molding surface/moldable surface interface.
  • the pressure between the mold and the substrate can be generated by electrical or magnetic forces between the mold and the substrate.
  • an attractive electrical field can be established between the mold and the substrate.
  • a repulsive field can be used to drive the mold and the substrate together.
  • an attractive magnetic force between the mold and the substrate can provide attractive pressure or repulsive external magnetic forces can drive the mold and the substrate together.
  • a field forces the molding surface onto the moldable surface.
  • this imprinting can be effected by connecting layers 14 and 23 to opposite polarity terminals of a voltage source 30 .
  • the voltage from source 30 can be AC, DC, pulsed, or a combination of such voltages.
  • FIGS. 3A, 3B and 3 C show substrate constructions that facilitate electrical connection with substrate conductive layer 23 .
  • electrical contact can be made from the bottom of substrate 20 through conductive vias 30 .
  • electrical contact can be made from the bottom or from the lateral edges by coating or plating a peripheral layer 31 of conductive material around a portion of the lateral periphery of the substrate 20 .
  • a similar peripheral conductive layer 32 is shown in FIG. 3C except that layer 32 does not extend to the bottom of the substrate.
  • an electric field for imprinting the substrate can be created between appropriately dissimilar materials by the use of light, heat or RF radiation.
  • the mold 10 or the substrate 20 may be advantageous to make the mold 10 or the substrate 20 (including the conductive layers) of materials at least partially transparent to radiation which can be used to soften or cure the moldable surface.
  • FIG. 4 shows an alternative apparatus for using an electrical field to press the molding surface into the moldable surface.
  • the apparatus of FIG. 4 is similar to that of FIG. 2 except that rather than directly connecting the layers 14 and 23 to a voltage source, the mold 10 /substrate 20 assembly is disposed between electrodes 40 and 41 that are connected to an AC voltage source 42 .
  • the frequency of the AC source can be tuned to generate a desired induced voltage between layers 14 and 23 .
  • FIG. 5 illustrates alternative apparatus for practicing the method of FIG. 1.
  • the FIG. 5 apparatus is similar to the apparatus of FIG. 2 except that instead of conductive layers, magnetic layers 14 A, 23 A are disposed distal to the mold/substrate interface and a magnetic field is used to imprint the mold surface into the moldable surface.
  • the magnetic layers can be magnetizable material, permanent magnets or electromagnets.
  • layers 14 A, 23 A can comprise helically or spirally wound coils.
  • Current from current sources 50 A, 50 B applied to coils can produce an attractive magnetic field to press the molding surface onto the moldable surface. Connections between the current sources and their respective coils can be facilitated by conduction through conductive vias (not shown) in the substrate and the mold.
  • layers 14 A and 23 A can be magnetic materials that attract one another, and the current sources can be omitted.
  • the mold can comprise an electromagnet and the substrate can comprise a layer of magnetizable or permanent magnetic material or vice versa. In essence, what is needed is a magnetic layer and a magnetic field generator interacting with the magnetic layer to press the molding surface and the moldable surface together.
  • FIGS. 6A and 6B show different multilayer mold constructions useful in the embodiments of FIGS. 2 - 5 .
  • the conductive or magnetic layer 14 is disposed immediately distal to the interface between the molding surface 12 and the moldable surface (not shown).
  • the conductive or magnetic layer 14 is still distal to the interface on the mold side, but there is an intervening layer 60 .
  • field-induced imprinting can be used in conjunction with other methods of providing imprint pressure such as direct fluid pressure or mechanical pressure in all possible permutations in applying these forces, including applying them simultaneously, sequentially, or selectively.
  • FIG. 7 schematically illustrates additional steps compatible with the process described herein.
  • Precision mechanical pressing or pressurized fluid pressing can be of supplemental use, particularly after the molding surface is engaged with the moldable layer. Radiation, such as infrared or ultraviolet, can be used for heating, softening, or curing the moldable surface material.
  • the layers 14 , 23 can be conductive or magnetic, and the pressing fields can be DC, AC, or combinations thereof.

Abstract

An improved method of imprint lithography involves using fluid-induced pressure from electric or magnetic fields to press a mold onto a substrate having a moldable surface. In essence, the method comprises the steps of providing a substrate having a moldable surface, providing a mold having a molding surface and pressing the molding surface and the moldable surface together by electric or magnetic fields to imprint the molding surface onto the moldable surface. The molding surface advantageously comprises a plurality of projecting features of nanoscale extent or separation, but the molding surface can also be a smooth planar surface, as for planarization. The improved method can be practiced without mechanical presses and without sealing the region between the mold and the substrate.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application claims the benefit of U.S. Provisional Patent Application No. 60/382,961 filed by Stephen Chou and Wei Zhang on May 24, 2002 and entitled “Field-Induced Pressure Imprint Lithography”. [0001]
  • This application is a continuation-in-part of U.S. patent application Ser. No. 10/244,276 filed by Stephen Chou on Sep. 16, 2002 and entitled “Lithographic Method For Molding Pattern With Nanoscale Features” which, in turn, is a continuation of U.S. application Ser. No. 10/046,594 filed by Stephen Chou on Oct. 29, 2001, which claims priority to U.S. patent application Ser. No. 09/107,006 filed by Stephen Chou on Jun. 30, 1998 (now U.S. Pat. No. 6,309,580 issued Oct. 30, 2001) and which, in turn, claims priority to U.S. application Ser. No. 08/558,809 filed by Stephen Chou on Nov. 15, 1995 (now U.S. Pat. No. 5,772,905 issued Jun. 30, 1998). All of the foregoing Related Applications are incorporated herein by reference. [0002]
  • This case is also a continuation-in-part of U.S. patent application Ser. No. 10/140,140 filed by Stephen Chou on May 7, 2002 and entitled “Fluid Pressure Imprint Lithography” which is a divisional of U.S. patent application Ser. No. 09/618,174 filed by Stephen Chou on Jul. 18, 2000 and entitled “Fluid Pressure Imprint Lithography” (now U.S. Pat. No. 6,482,742). [0003]
  • FIELD OF THE INVENTION
  • This invention relates to imprint lithography and, in particular, to imprint lithography wherein electrical or magnetic fields are used to imprint a molding surface onto a moldable surface. The process is particularly useful to provide nanoimprint lithography of enhanced resolution and uniformity over an increased area. [0004]
  • BACKGROUND OF THE INVENTION
  • Photolithography is a key process in the fabrication of semiconductor integrated circuits and many optical, magnetic and micromechanical devices. Lithography creates a pattern on a thin film carried on a substrate so that, in subsequent process steps, the pattern can be replicated in the substrate or in another material which is added onto the substrate. Conventional lithography typically involves applying a thin film of resist to a substrate, exposing the resist to a desired pattern of radiation, and developing the exposed film to produce a physical pattern. In this approach, resolution is limited by the wavelength of the radiation, and the equipment becomes increasingly expensive as the feature size becomes smaller. [0005]
  • Imprint lithography, based on a fundamentally different principle, offers high resolution, high throughput, low cost and the potential of large area coverage. In imprint lithography, a mold with microscale or nanoscale features is pressed into a thin film, deforming the shape of the film according to the features of the mold and forming a relief pattern in the film. After the mold is removed, the thin film can be processed to remove the reduced thickness portions. This removal exposes the underlying substrate for further processing. Details of imprint lithography are described in applicant's U.S. Pat. No. 5,772,905 issued Jun. 30, 1998 and entitled “Nanoimprint Lithography”. The '905 patent is incorporated herein by reference. [0006]
  • The usual method of pressing the mold into the thin film involves positioning the mold and the substrate on respective rigid plates of a high precision mechanical press. With such apparatus, the process can generate sub-25 nm features with a high degree of uniformity over areas on the order of 12 in[0007] 2. Larger areas of uniformity would be highly advantageous to increase throughput and for many applications such as displays.
  • The use of a high precision mechanical press to press a mold into a thin film presents tolerance problems in replicating small patterns over large areas. Presses move on guide shafts through apertures, and the spacings between the shafts and their respective apertures can be large compared to the features to be replicated. Such spacings permit undesirable relative translational and rotational shifts between the substrate and the mold. Moreover, despite the most careful construction, the molds and the substrates used in lithography are not perfectly planar. When these molds and substrates are disposed on the rigid plates of a press, the deviations from planarity over large areas can result in variations in the molding pressure and depth of imprint. Accordingly, it is desirable to provide a method of imprint lithography which avoids the limitations of mechanical presses. [0008]
  • An alternative method of pressing the mold into the thin film is the technique of fluid pressure imprint lithography described in applicant's U.S. Pat. No. 6,482,742 issued Nov. 19, 2002 and entitled “Fluid Pressure Imprint Lithography”. In this method the molding surface is disposed adjacent the film, the molding surface/film interface is sealed and pressurized fluid is used to force the molding surface into the film. Since the pressure is isostatic, translational and rotational shifts are minimal, and smaller features can be imprinted with high uniformity over larger areas than can be imprinted using mechanical presses. [0009]
  • Fluid pressure imprinting has dramatically improved nanoimprint lithography. A further improvement for commercial manufacture would be a method which could provide comparable results without the necessity of sealing the molding surface/film interface. [0010]
  • SUMMARY OF THE INVENTION
  • An improved method of imprint lithography involves using field-induced pressure from electric or magnetic fields to press a mold into a substrate having a moldable surface. In essence, the method comprises the steps of providing a substrate having a moldable surface, providing a mold having a molding surface and pressing the molding surface and the moldable surface together by electric or magnetic fields to imprint the molding surface onto the moldable surface. The molding surface advantageously comprises a plurality of projecting features of nanoscale extent or separation, but the molding surface can also be a smooth planar surface, as for planarization. The improved method can be practiced without mechanical presses and without sealing the region between the mold and the substrate.[0011]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The advantages, nature and various additional features of the invention will appear more fully upon consideration of the illustrative embodiments now to be described in detail in connection with the accompanying drawings. In the drawings: [0012]
  • FIG. 1 is a schematic flow diagram of the steps in an improved method of imprint lithography; [0013]
  • FIG. 2 illustrates apparatus for practicing the method of FIG. 1 using an electrical field; [0014]
  • FIGS. 3A, 3B and [0015] 3C show various substrate constructions for facilitating electrical contact with a substrate conductive layer;
  • FIG. 4 shows an alternative apparatus for practicing the method of FIG. 1 without direct electrical contact; [0016]
  • FIG. 5 illustrates apparatus for practicing the method of FIG. 1 using a magnetic field; [0017]
  • FIGS. 6A and 6B show exemplary multilayer mold constructions useful for the apparatus of FIGS. 2, 4 and [0018] 5; and
  • FIG. 7 schematically illustrates how the method of FIG. 1 is compatible with a variety of other processing steps.[0019]
  • It is to be understood that these drawing are for purposes of illustrating the concepts of the invention and are not to scale. [0020]
  • DETAILED DESCRIPTION
  • Referring to the drawings, FIG. 1 is a schematic flow diagram of an improved process for imprint lithography using field-induced pressure. An initial step shown in Block A, is to provide a mold having a molding surface such as plurality of protruding features and a substrate having a surface of moldable material such as one or more moldable thin films. Protruding features are preferably micrometer scale features and, more advantageously, nanoscale features. The method is highly advantageously where the mold surface has at least two spaced apart protruding features. A moldable material is one which retains or can be hardened to retain the imprint of the protruding features from the mold surface. [0021]
  • The next step, shown in Block B, is to place the mold adjacent the moldable surface. If the moldable surface is a thin film that already includes a previously formed pattern, then the pattern of the mold should be carefully aligned with the previous pattern. This can be done by alignment techniques well known in the art. [0022]
  • The third step (Block C) is to press the mold onto the moldable surface by field-induced pressure. One method for doing this is to dispose the assembly between conductive layers and apply an electrical field between the layers. Another approach is to dispose the assembly between layers of magnetic material and to apply a magnetic field that will force the layers together. The advantage of field-induced pressure is that the resulting force uniformly pushes the mold onto the moldable surface. Shear or rotational components are de minimus. Moreover since the mold and/or substrate are flexible rather than rigid, conformation between the mold and the moldable surface is achieved regardless of unavoidable deviations from planarity. The result is an enhanced level of molding resolution, alignment and uniformity over an increased area of the film. [0023]
  • The next step shown in Block D, is to harden the moldable surface, if necessary, so that it retains the imprint of the mold and then to remove the mold. The process for hardening depends on the material of the moldable surface. Some materials will maintain the imprint with no hardening. Thermoplastic materials can be hardened by preliminarily heating them prior to molding and permitting them to cool after imprint. PMMA, for example, can be suitably softened by heating to 120° C. prior to molding and hardened by cooling after imprint. Heat curable materials can be hardened by applying heat during imprint. A heater and/or the use of a heated pressurized fluid can thus effectuate such softening or hardening. Radiation curable materials can be hardened by the application of UV radiation during imprint. Silicon can be softened by UV laser radiation to accept imprinting and hardened by cooling to ambient temperature. [0024]
  • The fifth step shown in Block E is optional in some applications. It is to remove contaminants (if any) and excess material from the recesses of the molded surface. The molded surface will typically have raised features and recesses. In many lithographic operations it is desirable to eliminate the material from the recesses so that the underlying substrate is exposed for further processing. This can be conveniently accomplished using reactive ion etching. [0025]
  • In some applications, the imprinted structure itself is a part of a device to be built. In other applications the resulting structure is a resist-covered semiconductor substrate with a pattern of recesses extending toward the substrate. Such a structure can be further processed in a variety of ways well-known in the art. For example, the molded film can be used as a mask for the removal of surface layers in exposed regions of the substrate, for doping exposed regions of the substrate or for growing or depositing materials on the exposed regions. [0026]
  • FIG. 2 schematically illustrates a first [0027] exemplary apparatus 9 for practicing the method of FIG. 1. The apparatus 9 comprises an assembly of a mold 10 having a molding surface 12 and a substrate 20 having a moldable surface 22. The mold and substrate are disposed with the molding surface 12 adjacent the moldable surface 22. The mold 10 comprises a body having a molding surface 12. Surface 12 can include a plurality of protruding features 13 having a desired shape for imprinting onto the moldable surface 22. The molding surface 12 can be patterned into protruding features 13 of nanoscale dimensions by known techniques such as electron beam lithography. The projecting extent of the protruding features 13 is typically in the range 0.1 nm to 200 μm. Typical separations between protruding features are 200 nanometers or less. Advantageously the mold 10 is a multilayer structure comprising a layer of conductive or chargeable material that is distal to the interface between the molding surface and the moldable surface. The term layer as used herein is intended broadly to cover a supported layer, a plate or a composite layer.
  • The [0028] substrate 20 is typically a solid substrate and the moldable surface 22 is typically a thin film of polymer, monomer, olgimer or combination thereof that is pliable or can be made pliable to pressure and can retain a pressure-imprinted deformation or pattern. It can be a thermoplastic polymer, such as polycarbonate or polymethyl methacrylate (PMMA), which softens in response to heat. Alternately it can be a monomer liquid, such as a curable silicone, which hardens with curing. Yet further in the alternative, it can be solid silicon which can be liquefied by a UV laser pulse. Polymer thin films are typically applied to the substrate by spraying or spinning. Advantageously the film does not adhere to the mold surface. If necessary, the mold surface can be coated with a release agent to prevent such adherence. Advantageously the substrate is a multilayer structure comprising a layer or plate 23 of conductive or chargeable material that is distal to the molding surface/moldable surface interface.
  • The pressure between the mold and the substrate can be generated by electrical or magnetic forces between the mold and the substrate. For a pressure generated by an electrical force, an attractive electrical field can be established between the mold and the substrate. Alternatively a repulsive field can be used to drive the mold and the substrate together. For a pressure generated by a magnetic force, an attractive magnetic force between the mold and the substrate can provide attractive pressure or repulsive external magnetic forces can drive the mold and the substrate together. [0029]
  • In use, a field forces the molding surface onto the moldable surface. In the embodiment of FIG. 2 where the field is an electric field, this imprinting can be effected by connecting [0030] layers 14 and 23 to opposite polarity terminals of a voltage source 30. The voltage from source 30 can be AC, DC, pulsed, or a combination of such voltages.
  • Electrical connection with [0031] layers 14 and 23 can be facilitated by choosing substrate 20 to be conductive and mold 10 to be conductive. Alternatively, conductive through holes (not shown) through substrate 20 to layer 23 and through mold 10 to layer 14 can provide connection. FIGS. 3A, 3B and 3C show substrate constructions that facilitate electrical connection with substrate conductive layer 23. In FIG. 3A, electrical contact can be made from the bottom of substrate 20 through conductive vias 30. In FIG. 3B electrical contact can be made from the bottom or from the lateral edges by coating or plating a peripheral layer 31 of conductive material around a portion of the lateral periphery of the substrate 20. A similar peripheral conductive layer 32 is shown in FIG. 3C except that layer 32 does not extend to the bottom of the substrate. Yet further in the alternative, an electric field for imprinting the substrate can be created between appropriately dissimilar materials by the use of light, heat or RF radiation.
  • In some applications it may be advantageous to make the [0032] mold 10 or the substrate 20 (including the conductive layers) of materials at least partially transparent to radiation which can be used to soften or cure the moldable surface.
  • In other applications it may be desired to omit one of the [0033] conductive layers 14, 23 and to use an attractive or repulsive field between an external electrode and the remaining layer to force the molding surface and the moldable surface together.
  • FIG. 4 shows an alternative apparatus for using an electrical field to press the molding surface into the moldable surface. The apparatus of FIG. 4 is similar to that of FIG. 2 except that rather than directly connecting the [0034] layers 14 and 23 to a voltage source, the mold 10/substrate 20 assembly is disposed between electrodes 40 and 41 that are connected to an AC voltage source 42. The frequency of the AC source can be tuned to generate a desired induced voltage between layers 14 and 23.
  • FIG. 5 illustrates alternative apparatus for practicing the method of FIG. 1. The FIG. 5 apparatus is similar to the apparatus of FIG. 2 except that instead of conductive layers, [0035] magnetic layers 14A, 23A are disposed distal to the mold/substrate interface and a magnetic field is used to imprint the mold surface into the moldable surface. The magnetic layers can be magnetizable material, permanent magnets or electromagnets. For example, layers 14A, 23A can comprise helically or spirally wound coils. Current from current sources 50A, 50B applied to coils can produce an attractive magnetic field to press the molding surface onto the moldable surface. Connections between the current sources and their respective coils can be facilitated by conduction through conductive vias (not shown) in the substrate and the mold. In a modified form, layers 14A and 23A can be magnetic materials that attract one another, and the current sources can be omitted. In another variation, the mold can comprise an electromagnet and the substrate can comprise a layer of magnetizable or permanent magnetic material or vice versa. In essence, what is needed is a magnetic layer and a magnetic field generator interacting with the magnetic layer to press the molding surface and the moldable surface together.
  • FIGS. 6A and 6B show different multilayer mold constructions useful in the embodiments of FIGS. [0036] 2-5. In FIG. 6A, the conductive or magnetic layer 14 is disposed immediately distal to the interface between the molding surface 12 and the moldable surface (not shown). In FIG. 6B, the conductive or magnetic layer 14 is still distal to the interface on the mold side, but there is an intervening layer 60.
  • It is further contemplated that field-induced imprinting can be used in conjunction with other methods of providing imprint pressure such as direct fluid pressure or mechanical pressure in all possible permutations in applying these forces, including applying them simultaneously, sequentially, or selectively. [0037]
  • FIG. 7 schematically illustrates additional steps compatible with the process described herein. Precision mechanical pressing or pressurized fluid pressing can be of supplemental use, particularly after the molding surface is engaged with the moldable layer. Radiation, such as infrared or ultraviolet, can be used for heating, softening, or curing the moldable surface material. The [0038] layers 14, 23 can be conductive or magnetic, and the pressing fields can be DC, AC, or combinations thereof.
  • It is to be understood that the above described embodiments are illustrative of only a few of the many embodiments which can represent applications of the invention. Numerous and varied other arrangements can be made by those skilled in the art without departing from the spirit and scope of the invention. [0039]

Claims (24)

What is claimed:
1. A method for processing a moldable surface comprising the steps of:
providing a substrate having the moldable surface;
providing a mold having a molding surface;
pressing the molding surface and the moldable surface together by electric or magnetic field-induced pressure to imprint the molding surface onto the moldable surface; and
withdrawing the mold from the moldable surface.
2. The method of claim 1 wherein the moldable surface comprises one or more moldable layers disposed on the substrate.
3. The method of claim 2 wherein the imprinting produces reduced thickness regions in the moldable layer and further comprising the steps of:
removing the material of the moldable layer from the reduced thickness regions to selectively expose regions of the substrate; and
further processing the substrate selectively in the exposed regions.
4. The method of claim 3 wherein the further processing comprises doping the substrate with impurities, removing material from the substrate, or adding material on the substrate.
5. The method of claim 1 further comprising the step of hardening the moldable surface after pressing.
6. The method of claim 1 wherein the substrate or the mold or both are sufficiently flexible to conform together under the pressure.
7. The method of claim 2 where the thickness of the moldable layer is in the range 0.1 nm to 200 μm.
8. Apparatus for imprinting a moldable surface on a substrate comprising:
a mold having a molding surface;
a substrate having a moldable surface positioned adjacent the molding surface of the mold;
a first chargeable or conductive layer disposed distal to the moldable surface/molding surface interface on the mold side of the interface;
a second chargeable or conductive layer disposed distal to the moldable surface/molding surface interface on the moldable surface side of the interface; and
means for forming an electrical field between the first and second layers to press the molding surface and the moldable surface together.
9. The apparatus of claim 8 wherein at least one of the first and second layers is conductive and the means for forming an electrical field comprises a voltage source.
10. The apparatus of claim 9 wherein the first and second layers comprise conductive material.
11. The apparatus of claim 9 wherein the voltage source comprises a DC voltage source.
12. The apparatus of claim 9 wherein the voltage source comprises an AC voltage source.
13. The apparatus of claim 9 wherein the voltage source comprises a pulsed voltage source.
14. The apparatus of claim 9 wherein the voltage source can provide a combination of DC, AC and pulsed voltage.
15. The apparatus of claim 9 wherein the mold includes a conductive layer.
16. The apparatus of claim 10 wherein the voltage source is connected between the layers of conductive material.
17. The apparatus of claim 9 wherein the mold and the substrate are disposed between at least two external electrodes and the means for forming an electrical field comprises a voltage source to apply a voltage between the external electrodes.
18. The apparatus of claim 17 wherein the voltage source is an AC or pulsed voltage source.
19. Apparatus for imprinting a moldable surface on a substrate comprising:
a mold having a molding surface;
a substrate having a moldable surface positioned adjacent the molding surface;
a magnetic layer disposed distal to the moldable surface/molding surface interface;
and a magnetic field generator to generate a magnetic field interacting with the first magnetic layer to press the molding surface and the moldable surface together.
20. The apparatus of claim 19 wherein the magnetic layer comprises a conductive coil or spiral.
21. The apparatus of claim 19 wherein the magnetic field generator comprises a conductive coil or spiral.
22. The apparatus of claim 19 wherein the magnetic layer comprises a layer of magnetized material.
23. The apparatus of claim 19 wherein the magnetic layer comprises a layer of magnetizable material.
24. The method of claim 1 further comprising the step of applying imprint pressure mechanically or as direct fluid pressure.
US10/445,578 1995-11-15 2003-05-27 Methods and apparatus of field-induced pressure imprint lithography Abandoned US20040036201A1 (en)

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US10/445,578 US20040036201A1 (en) 2000-07-18 2003-05-27 Methods and apparatus of field-induced pressure imprint lithography
US11/928,844 US7887739B2 (en) 1995-11-15 2007-10-30 Methods and apparatus of pressure imprint lithography
US11/933,170 US8852494B2 (en) 1999-10-08 2007-10-31 Method and apparatus of electrical field assisted imprinting
US12/940,302 US20110042861A1 (en) 1995-11-15 2010-11-05 Methods and apparatus of field-induced pressure imprint lithography

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US09/618,174 US6482742B1 (en) 2000-07-18 2000-07-18 Fluid pressure imprint lithography
US10/046,594 US20020167117A1 (en) 1998-06-30 2001-10-29 Release surfaces, particularly for use in nanoimprint lithography
US10/140,140 US7137803B2 (en) 2000-07-18 2002-05-07 Fluid pressure imprint lithography
US38296102P 2002-05-24 2002-05-24
US10/244,276 US20030080471A1 (en) 2001-10-29 2002-09-16 Lithographic method for molding pattern with nanoscale features
US10/445,578 US20040036201A1 (en) 2000-07-18 2003-05-27 Methods and apparatus of field-induced pressure imprint lithography

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US10/244,276 Continuation-In-Part US20030080471A1 (en) 1995-11-15 2002-09-16 Lithographic method for molding pattern with nanoscale features
US10/731,818 Continuation-In-Part US7482057B2 (en) 1998-10-09 2003-12-09 Microscale patterning and articles formed thereby

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US11/933,170 Continuation-In-Part US8852494B2 (en) 1999-10-08 2007-10-31 Method and apparatus of electrical field assisted imprinting
US12/940,302 Continuation US20110042861A1 (en) 1995-11-15 2010-11-05 Methods and apparatus of field-induced pressure imprint lithography

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Cited By (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020094496A1 (en) * 2000-07-17 2002-07-18 Choi Byung J. Method and system of automatic fluid dispensing for imprint lithography processes
US20020093122A1 (en) * 2000-08-01 2002-07-18 Choi Byung J. Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US20020150398A1 (en) * 2000-08-21 2002-10-17 Choi Byung J. Flexure based macro motion translation stage
US20030205657A1 (en) * 2002-05-01 2003-11-06 Voisin Ronald D. Methods of manufacturing a lithography template
US20030215577A1 (en) * 2002-05-16 2003-11-20 Willson Carlton Grant Method and system for fabricating nanoscale patterns in light curable compositions using an electric field
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US20040009673A1 (en) * 2002-07-11 2004-01-15 Sreenivasan Sidlgata V. Method and system for imprint lithography using an electric field
US20040022888A1 (en) * 2002-08-01 2004-02-05 Sreenivasan Sidlgata V. Alignment systems for imprint lithography
US20040053146A1 (en) * 2000-07-16 2004-03-18 University Of Texas System Board Of Regents, Ut System Method of varying template dimensions to achieve alignment during imprint lithography
US20040065976A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability
US20040104641A1 (en) * 1999-10-29 2004-06-03 University Of Texas System Method of separating a template from a substrate during imprint lithography
US20040112862A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Planarization composition and method of patterning a substrate using the same
US20040116548A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Compositions for dark-field polymerization and method of using the same for imprint lithography processes
US20040112153A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Method and system for determining characteristics of substrates employing fluid geometries
US20040124566A1 (en) * 2002-07-11 2004-07-01 Sreenivasan Sidlgata V. Step and repeat imprint lithography processes
US20040141163A1 (en) * 2000-07-16 2004-07-22 The University Of Texas System, Board Of Regents, Ut System Device for holding a template for use in imprint lithography
US20040146792A1 (en) * 2002-12-13 2004-07-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate
US20040170770A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US20040211754A1 (en) * 2003-04-25 2004-10-28 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US20040223131A1 (en) * 2002-11-13 2004-11-11 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20040256764A1 (en) * 2003-06-17 2004-12-23 University Of Texas System Board Of Regents Method to reduce adhesion between a conformable region and a pattern of a mold
US20050006343A1 (en) * 2003-07-09 2005-01-13 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US20050051698A1 (en) * 2002-07-08 2005-03-10 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US20050061773A1 (en) * 2003-08-21 2005-03-24 Byung-Jin Choi Capillary imprinting technique
US20050067379A1 (en) * 2003-09-25 2005-03-31 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20050074512A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents System for creating a turbulent flow of fluid between a mold and a substrate
US20050082253A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
US20050098534A1 (en) * 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
US20050106321A1 (en) * 2003-11-14 2005-05-19 Molecular Imprints, Inc. Dispense geometery to achieve high-speed filling and throughput
US20050146078A1 (en) * 2000-07-18 2005-07-07 Stephen Chou Apparatus for double-sided imprint lithography
US20050156353A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Method to improve the flow rate of imprinting material
US20050158419A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Thermal processing system for imprint lithography
US20050160011A1 (en) * 2004-01-20 2005-07-21 Molecular Imprints, Inc. Method for concurrently employing differing materials to form a layer on a substrate
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US20050187339A1 (en) * 2004-02-23 2005-08-25 Molecular Imprints, Inc. Materials for imprint lithography
US20050185169A1 (en) * 2004-02-19 2005-08-25 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US20050192421A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
US20050193944A1 (en) * 2004-03-04 2005-09-08 Asml Netherlands B.V. Printing apparatus and device manufacturing method
US20050202350A1 (en) * 2004-03-13 2005-09-15 Colburn Matthew E. Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
US20050212022A1 (en) * 2004-03-24 2005-09-29 Greer Edward C Memory cell having an electric field programmable storage element, and method of operating same
US6951173B1 (en) 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US20050236739A1 (en) * 1999-03-11 2005-10-27 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US20050236360A1 (en) * 2004-04-27 2005-10-27 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US20050253307A1 (en) * 2004-05-11 2005-11-17 Molecualr Imprints, Inc. Method of patterning a conductive layer on a substrate
US20050260848A1 (en) * 2004-05-21 2005-11-24 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US20050263077A1 (en) * 2004-05-28 2005-12-01 Board Of Regents, The University Of Texas System Adaptive shape substrate support method
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20060017876A1 (en) * 2004-07-23 2006-01-26 Molecular Imprints, Inc. Displays and method for fabricating displays
US20060030067A1 (en) * 2004-08-06 2006-02-09 Industrial Technology Research Institute Method for manufacturing organic thin-film transistor with plastic substrate
US20060035029A1 (en) * 2004-08-16 2006-02-16 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US20060032437A1 (en) * 2004-08-13 2006-02-16 Molecular Imprints, Inc. Moat system for an imprint lithography template
US20060035464A1 (en) * 2004-08-13 2006-02-16 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate
US20060036051A1 (en) * 2004-08-16 2006-02-16 Molecular Imprints, Inc. Composition to provide a layer with uniform etch characteristics
US20060063277A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US20060063359A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Patterning substrates employing multi-film layers defining etch differential interfaces
US20060063387A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy
US20060060557A1 (en) * 2004-09-21 2006-03-23 Sreenivasan Sidlgata V Reverse tone patterning on surfaces having surface planarity perturbations
US20060063112A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
US20060111454A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US20060115999A1 (en) * 2004-12-01 2006-06-01 Molecular Imprints, Inc. Methods of exposure for the purpose of thermal management for imprint lithography processes
US20060113697A1 (en) * 2004-12-01 2006-06-01 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US20060126058A1 (en) * 2004-11-30 2006-06-15 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
US20060137555A1 (en) * 2004-12-23 2006-06-29 Asml Netherlands B.V. Imprint lithography
US20060144814A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US20060144275A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US20060144274A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US20060154179A1 (en) * 2005-01-07 2006-07-13 Asml Netherlands B. V. Imprint lithography
US20060150849A1 (en) * 2004-12-30 2006-07-13 Asml Netherlands B.V. Imprint lithography
US20060172553A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Method of retaining a substrate to a wafer chuck
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060180952A1 (en) * 2005-02-17 2006-08-17 Asml Netherlands B.V. Imprint lithography
US20060196377A1 (en) * 2005-03-07 2006-09-07 Asml Netherlands B.V. Imprint lithography
US7122482B2 (en) 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
US20060231979A1 (en) * 2005-04-19 2006-10-19 Asml Netherlands B.V. Imprint lithography
US20060230959A1 (en) * 2005-04-19 2006-10-19 Asml Netherlands B.V. Imprint lithography
US20060254446A1 (en) * 2005-05-16 2006-11-16 Asml Netherlands B.V. Imprint lithography
US20060259546A1 (en) * 2003-12-11 2006-11-16 Heptagon Oy Manufacturing a replication tool, sub-master or replica
US20060268256A1 (en) * 2005-05-27 2006-11-30 Asml Netherlands B.V. Imprint lithography
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US20060267231A1 (en) * 2005-05-27 2006-11-30 Asml Netherlands B.V. Imprint lithography
US20060280829A1 (en) * 2005-06-13 2006-12-14 Asml Netherlands B.V. Imprint lithography
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US20070021520A1 (en) * 2005-07-22 2007-01-25 Molecular Imprints, Inc. Composition for adhering materials together
US20070017899A1 (en) * 2005-07-19 2007-01-25 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US20070018360A1 (en) * 2005-07-21 2007-01-25 Asml Netherlands B.V. Imprint lithography
US20070023976A1 (en) * 2005-07-26 2007-02-01 Asml Netherlands B.V. Imprint lithography
US20070071582A1 (en) * 2005-08-25 2007-03-29 Molecular Imprints, Inc. System to transfer a template transfer body between a motion stage and a docking plate
EP1780815A2 (en) * 2005-10-31 2007-05-02 Fuji Electric Holdings Co., Ltd. Organic thin film transistor and manufacturing method thereof
US20070102838A1 (en) * 2005-11-04 2007-05-10 Asml Netherlands B.V. Imprint lithography
US20070102844A1 (en) * 2005-11-04 2007-05-10 Asml Netherlands B.V. Imprint lithography
US20070126150A1 (en) * 2005-12-01 2007-06-07 Molecular Imprints, Inc. Bifurcated contact printing technique
US20070126156A1 (en) * 2005-12-01 2007-06-07 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US20070132152A1 (en) * 2005-12-08 2007-06-14 Molecular Imprints, Inc. Method and System for Double-Sided Patterning of Substrates
US20070141191A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US7244386B2 (en) 2004-09-27 2007-07-17 Molecular Imprints, Inc. Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom
US20070170617A1 (en) * 2006-01-20 2007-07-26 Molecular Imprints, Inc. Patterning Substrates Employing Multiple Chucks
US7252715B2 (en) 2002-07-09 2007-08-07 Molecular Imprints, Inc. System for dispensing liquids
US20070190200A1 (en) * 2005-01-31 2007-08-16 Molecular Imprints, Inc. Chucking system comprising an array of fluid chambers
US20070228589A1 (en) * 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US20070228608A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Preserving Filled Features when Vacuum Wiping
US20070228593A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
US20070243655A1 (en) * 2006-04-18 2007-10-18 Molecular Imprints, Inc. Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features
US20070246850A1 (en) * 2006-04-21 2007-10-25 Molecular Imprints, Inc. Method for Detecting a Particle in a Nanoimprint Lithography System
US20080003827A1 (en) * 2006-06-30 2008-01-03 Asml Netherlands B.V. Imprintable medium dispenser
US20080011934A1 (en) * 2006-06-30 2008-01-17 Asml Netherlands B.V. Imprint lithography
US20080110557A1 (en) * 2006-11-15 2008-05-15 Molecular Imprints, Inc. Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces
US20080141862A1 (en) * 2003-10-02 2008-06-19 Molecular Imprints, Inc. Single Phase Fluid Imprint Lithography Method
US20080157414A1 (en) * 2006-12-29 2008-07-03 Jin Wuk Kim Mold structure, patterning method using the same, and method of fabricating liquid crystal display device
CN100405085C (en) * 2004-06-28 2008-07-23 鸿富锦精密工业(深圳)有限公司 Method and device for producing optical module
US7418902B2 (en) 2005-05-31 2008-09-02 Asml Netherlands B.V. Imprint lithography including alignment
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
US20090037004A1 (en) * 2000-10-12 2009-02-05 Molecular Imprints, Inc. Method and System to Control Movement of a Body for Nano-Scale Manufacturing
US20090038636A1 (en) * 2007-08-09 2009-02-12 Asml Netherlands B.V. Cleaning method
US20090057267A1 (en) * 2007-09-05 2009-03-05 Asml Netherlands B.V. Imprint lithography
US20090136654A1 (en) * 2005-10-05 2009-05-28 Molecular Imprints, Inc. Contact Angle Attenuations on Multiple Surfaces
US20090169662A1 (en) * 2004-11-30 2009-07-02 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US20090250840A1 (en) * 2006-04-18 2009-10-08 Molecular Imprints, Inc. Template Having Alignment Marks Formed of Contrast Material
US7670534B2 (en) 2005-09-21 2010-03-02 Molecular Imprints, Inc. Method to control an atmosphere between a body and a substrate
US20100105206A1 (en) * 2004-06-01 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100108639A1 (en) * 2007-03-30 2010-05-06 Pioneer Corporation Imprinting mold and method of producing imprinting mold
US7780893B2 (en) 2006-04-03 2010-08-24 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
US7811505B2 (en) 2004-12-07 2010-10-12 Molecular Imprints, Inc. Method for fast filling of templates for imprint lithography using on template dispense
US20100270711A1 (en) * 2009-04-22 2010-10-28 Masahiro Kanno Pattern transfer method
US7854877B2 (en) 2007-08-14 2010-12-21 Asml Netherlands B.V. Lithography meandering order
US7880872B2 (en) 2004-11-30 2011-02-01 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
WO2011138540A1 (en) 2010-05-07 2011-11-10 Institut National Des Sciences Appliquees De Toulouse Method of topographical and electrical nanostructuration of a thin film of electret polymer and thin film of electret polymer obtained
US20120009791A1 (en) * 2010-07-08 2012-01-12 Zhang Yingkang Pattern formation method
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US20130087528A1 (en) * 2009-06-09 2013-04-11 Zhen-Dong Zhu Nanoimprint resist, nanoimprint mold and nanoimprint lithography
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US20130307195A1 (en) * 2007-11-30 2013-11-21 Showa Denko K.K. Curable composition for transfer materials and method for forming micropattern using the curable composition
KR101413233B1 (en) * 2007-09-14 2014-06-30 삼성전자 주식회사 Nano-imprint lithography process
US20140183783A1 (en) * 2013-01-03 2014-07-03 Elwha Llc Nanoimprint lithography
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US9302424B2 (en) 2013-01-03 2016-04-05 Elwha, Llc Nanoimprint lithography
US20160129612A1 (en) * 2014-11-11 2016-05-12 Canon Kabushiki Kaisha Imprint method, imprint apparatus, mold, and article manufacturing method
US20160203904A1 (en) * 2014-03-31 2016-07-14 International Business Machines Corporation Thin film inductor with extended yokes
US9561603B2 (en) 2013-01-03 2017-02-07 Elwha, Llc Nanoimprint lithography
US10286615B2 (en) 2011-09-29 2019-05-14 Sharp Kabushiki Kaisha Molding apparatus and molding method
WO2019210976A1 (en) * 2018-05-04 2019-11-07 Ev Group E. Thallner Gmbh Stamp and method for embossing
US10593603B2 (en) 2018-03-16 2020-03-17 Sandisk Technologies Llc Chemical mechanical polishing apparatus containing hydraulic multi-chamber bladder and method of using thereof
CN112213917A (en) * 2019-07-10 2021-01-12 长春工业大学 Uniform electric field assisted nanoimprint forming device and method
WO2022055626A3 (en) * 2020-06-26 2022-06-09 The Research Foundation For The State University Of New York Thermoplastic components, systems, and methods for forming same
CN115071176A (en) * 2022-05-24 2022-09-20 华南理工大学 Device and method for directionally arranging polymer-based filler coupled by electric field and pressure

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040036201A1 (en) * 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US8852494B2 (en) * 1999-10-08 2014-10-07 Princeton University Method and apparatus of electrical field assisted imprinting
EP2407295B1 (en) * 2009-03-12 2019-06-12 The Doshisha Resin molding apparatus and resin molding method
JP2010262957A (en) * 2009-04-30 2010-11-18 Toshiba Corp Patterning method, patterning apparatus, and method for manufacturing semiconductor device
US8268226B2 (en) * 2009-07-07 2012-09-18 The Boeing Company Curing system and method using electromagnetic force and conductive heat transfer
EP2520414B1 (en) * 2009-08-22 2014-03-19 EV Group E. Thallner GmbH Device for heat stamping a polymer layer
JP2017010962A (en) 2015-06-16 2017-01-12 株式会社東芝 Device substrate and method of manufacturing device substrate, and method of manufacturing semiconductor device
US11732378B2 (en) * 2019-10-02 2023-08-22 Palo Alto Research Center Incorporated Three dielectric electrohydrodynamic patterning

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372564A (en) * 1965-04-19 1968-03-12 Simplex Wire & Cable Co Method for shaping metal tubes
US4078031A (en) * 1974-03-18 1978-03-07 Bishop Homer L Method of making a magnetic flexible printing plate
US4287235A (en) * 1979-05-29 1981-09-01 Massachusetts Institute Of Technology X-ray lithography at ˜100 A linewidths using X-ray masks fabricated by shadowing techniques
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4543225A (en) * 1984-07-05 1985-09-24 Docdata N.V. Method and system for reproducing relief structures onto a substrate
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US5259926A (en) * 1991-09-24 1993-11-09 Hitachi, Ltd. Method of manufacturing a thin-film pattern on a substrate
US5338396A (en) * 1993-11-01 1994-08-16 Motorola, Inc. Method of fabricating in-mold graphics
US5425848A (en) * 1993-03-16 1995-06-20 U.S. Philips Corporation Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
US5434107A (en) * 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
US5471455A (en) * 1994-05-17 1995-11-28 Jabr; Salim N. High density optical storage system
US5503963A (en) * 1994-07-29 1996-04-02 The Trustees Of Boston University Process for manufacturing optical data storage disk stamper
US5623368A (en) * 1994-07-07 1997-04-22 Corning Incorporated Process and apparatus for manufacturing networks of optical microlenses
US5638355A (en) * 1994-05-17 1997-06-10 Jabr; Salim N. Optical information reproducing by detecting phase shift of elevated symbols
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951437A (en) * 1957-03-29 1960-09-06 Elemag Anstalt Electromagnetic press
US4703644A (en) * 1986-02-10 1987-11-03 Kurt Waldner Die apparatus having an electromagnetic drive
US4954314A (en) * 1990-02-07 1990-09-04 Kawasaki Jukogyo Kabushiki Kaisha Method and apparatus for manufacturing synthetic products
US20040036201A1 (en) * 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372564A (en) * 1965-04-19 1968-03-12 Simplex Wire & Cable Co Method for shaping metal tubes
US4078031A (en) * 1974-03-18 1978-03-07 Bishop Homer L Method of making a magnetic flexible printing plate
US4287235A (en) * 1979-05-29 1981-09-01 Massachusetts Institute Of Technology X-ray lithography at ˜100 A linewidths using X-ray masks fabricated by shadowing techniques
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4543225A (en) * 1984-07-05 1985-09-24 Docdata N.V. Method and system for reproducing relief structures onto a substrate
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US5259926A (en) * 1991-09-24 1993-11-09 Hitachi, Ltd. Method of manufacturing a thin-film pattern on a substrate
US5425848A (en) * 1993-03-16 1995-06-20 U.S. Philips Corporation Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
US5338396A (en) * 1993-11-01 1994-08-16 Motorola, Inc. Method of fabricating in-mold graphics
US5434107A (en) * 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
US5471455A (en) * 1994-05-17 1995-11-28 Jabr; Salim N. High density optical storage system
US5638355A (en) * 1994-05-17 1997-06-10 Jabr; Salim N. Optical information reproducing by detecting phase shift of elevated symbols
US5623368A (en) * 1994-07-07 1997-04-22 Corning Incorporated Process and apparatus for manufacturing networks of optical microlenses
US5503963A (en) * 1994-07-29 1996-04-02 The Trustees Of Boston University Process for manufacturing optical data storage disk stamper
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography

Cited By (281)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050236739A1 (en) * 1999-03-11 2005-10-27 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US20040104641A1 (en) * 1999-10-29 2004-06-03 University Of Texas System Method of separating a template from a substrate during imprint lithography
US20040168588A1 (en) * 1999-10-29 2004-09-02 Board Of Regents, The University Of Texas System Method of orientating a template with respect to a substrate in response to a force exerted on the template
US20050089774A1 (en) * 1999-10-29 2005-04-28 Board Of Regents, The University Of Texas System Method to control the relative position between a body and a surface
US20040141163A1 (en) * 2000-07-16 2004-07-22 The University Of Texas System, Board Of Regents, Ut System Device for holding a template for use in imprint lithography
US20040163563A1 (en) * 2000-07-16 2004-08-26 The Board Of Regents, The University Of Texas System Imprint lithography template having a mold to compensate for material changes of an underlying liquid
US20040189996A1 (en) * 2000-07-16 2004-09-30 Board Of Regents, The University Of Texas System Method of aligning a template with a substrate employing moire patterns
US20040209177A1 (en) * 2000-07-16 2004-10-21 Board Of Regents, The University Of Texas System Dual wavelength method of determining a relative position of a substrate and a template
US20040053146A1 (en) * 2000-07-16 2004-03-18 University Of Texas System Board Of Regents, Ut System Method of varying template dimensions to achieve alignment during imprint lithography
US20070264588A1 (en) * 2000-07-16 2007-11-15 Board Of Regents, The University Of Texas System Imprint lithography system to produce light to impinge upon and polymerize a liquid in superimposition with template overlay marks
US7708542B2 (en) 2000-07-16 2010-05-04 Board Of Regents, The University Of Texas System Device for holding a template for use in imprint lithography
US20040189994A1 (en) * 2000-07-16 2004-09-30 Board Of Regents, The University Of Texas System Method of determining alignment of a template and a substrate having a liquid disposed therebetween
US7303383B1 (en) 2000-07-16 2007-12-04 Board Of Regents, The University Of Texas System Imprint lithography system to produce light to impinge upon and polymerize a liquid in superimposition with template overlay marks
US7186483B2 (en) 2000-07-16 2007-03-06 Board Of Regents, The University Of Texas System Method of determining alignment of a template and a substrate having a liquid disposed therebetween
US20080199816A1 (en) * 2000-07-17 2008-08-21 The University Of Texas Board Of Regents Method of Automatic Fluid Dispensing for Imprint Lithography Processes
US20020094496A1 (en) * 2000-07-17 2002-07-18 Choi Byung J. Method and system of automatic fluid dispensing for imprint lithography processes
US9223202B2 (en) 2000-07-17 2015-12-29 Board Of Regents, The University Of Texas System Method of automatic fluid dispensing for imprint lithography processes
US7717696B2 (en) 2000-07-18 2010-05-18 Nanonex Corp. Apparatus for double-sided imprint lithography
US20050146078A1 (en) * 2000-07-18 2005-07-07 Stephen Chou Apparatus for double-sided imprint lithography
US20020093122A1 (en) * 2000-08-01 2002-07-18 Choi Byung J. Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US8016277B2 (en) 2000-08-21 2011-09-13 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
US20020150398A1 (en) * 2000-08-21 2002-10-17 Choi Byung J. Flexure based macro motion translation stage
US20080095878A1 (en) * 2000-10-12 2008-04-24 Board Of Regents, University Of Texas System Imprint Lithography Template Having a Feature Size Under 250 nm
US7229273B2 (en) 2000-10-12 2007-06-12 Board Of Regents, The University Of Texas System Imprint lithography template having a feature size under 250 nm
US20040170771A1 (en) * 2000-10-12 2004-09-02 Board Of Regents, The University Of Texas System Method of creating a dispersion of a liquid on a substrate
US20090037004A1 (en) * 2000-10-12 2009-02-05 Molecular Imprints, Inc. Method and System to Control Movement of a Body for Nano-Scale Manufacturing
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
US20030205657A1 (en) * 2002-05-01 2003-11-06 Voisin Ronald D. Methods of manufacturing a lithography template
US20030215577A1 (en) * 2002-05-16 2003-11-20 Willson Carlton Grant Method and system for fabricating nanoscale patterns in light curable compositions using an electric field
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US20050051698A1 (en) * 2002-07-08 2005-03-10 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US7699598B2 (en) 2002-07-08 2010-04-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US7252715B2 (en) 2002-07-09 2007-08-07 Molecular Imprints, Inc. System for dispensing liquids
US20100053578A1 (en) * 2002-07-11 2010-03-04 Molecular Imprints, Inc. Apparatus for imprint lithography using an electric field
US20040124566A1 (en) * 2002-07-11 2004-07-01 Sreenivasan Sidlgata V. Step and repeat imprint lithography processes
US7727453B2 (en) 2002-07-11 2010-06-01 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US20040009673A1 (en) * 2002-07-11 2004-01-15 Sreenivasan Sidlgata V. Method and system for imprint lithography using an electric field
US20040022888A1 (en) * 2002-08-01 2004-02-05 Sreenivasan Sidlgata V. Alignment systems for imprint lithography
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065976A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability
US20040223131A1 (en) * 2002-11-13 2004-11-11 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7691313B2 (en) 2002-11-13 2010-04-06 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US20070228589A1 (en) * 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US6982783B2 (en) 2002-11-13 2006-01-03 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20050028618A1 (en) * 2002-12-12 2005-02-10 Molecular Imprints, Inc. System for determining characteristics of substrates employing fluid geometries
US20040112153A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Method and system for determining characteristics of substrates employing fluid geometries
US20040116548A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Compositions for dark-field polymerization and method of using the same for imprint lithography processes
US7365103B2 (en) 2002-12-12 2008-04-29 Board Of Regents, The University Of Texas System Compositions for dark-field polymerization and method of using the same for imprint lithography processes
US20040112862A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Planarization composition and method of patterning a substrate using the same
US7323130B2 (en) 2002-12-13 2008-01-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate
US20040146792A1 (en) * 2002-12-13 2004-07-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US20040170770A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20040211754A1 (en) * 2003-04-25 2004-10-28 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US6951173B1 (en) 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US20040256764A1 (en) * 2003-06-17 2004-12-23 University Of Texas System Board Of Regents Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US20050006343A1 (en) * 2003-07-09 2005-01-13 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7442336B2 (en) 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US20050061773A1 (en) * 2003-08-21 2005-03-24 Byung-Jin Choi Capillary imprinting technique
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US20050067379A1 (en) * 2003-09-25 2005-03-31 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7531025B2 (en) 2003-10-02 2009-05-12 Molecular Imprints, Inc. Method of creating a turbulent flow of fluid between a mold and a substrate
US20050072755A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents Single phase fluid imprint lithography method
US7270533B2 (en) 2003-10-02 2007-09-18 University Of Texas System, Board Of Regents System for creating a turbulent flow of fluid between a mold and a substrate
US20080141862A1 (en) * 2003-10-02 2008-06-19 Molecular Imprints, Inc. Single Phase Fluid Imprint Lithography Method
US20050074512A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents System for creating a turbulent flow of fluid between a mold and a substrate
US20050072757A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents Method of creating a turbulent flow of fluid between a mold and a substrate
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050082253A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
US7261830B2 (en) 2003-10-16 2007-08-28 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
US7122482B2 (en) 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
US20050098534A1 (en) * 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
US20050106321A1 (en) * 2003-11-14 2005-05-19 Molecular Imprints, Inc. Dispense geometery to achieve high-speed filling and throughput
US8221665B2 (en) * 2003-12-11 2012-07-17 Heptagon Oy Manufacturing a replication tool, sub-master or replica
US20060259546A1 (en) * 2003-12-11 2006-11-16 Heptagon Oy Manufacturing a replication tool, sub-master or replica
US20050156353A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Method to improve the flow rate of imprinting material
US20050158419A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Thermal processing system for imprint lithography
US20060125154A1 (en) * 2004-01-15 2006-06-15 Molecular Imprints, Inc. Method to improve the flow rate of imprinting material employing an absorption layer
US20050160011A1 (en) * 2004-01-20 2005-07-21 Molecular Imprints, Inc. Method for concurrently employing differing materials to form a layer on a substrate
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7019835B2 (en) 2004-02-19 2006-03-28 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US20050185169A1 (en) * 2004-02-19 2005-08-25 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US20050187339A1 (en) * 2004-02-23 2005-08-25 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050192421A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
US7698999B2 (en) 2004-03-04 2010-04-20 Asml Netherlands B.V. Printing apparatus and device manufacturing method
US7730834B2 (en) 2004-03-04 2010-06-08 Asml Netherlands B.V. Printing apparatus and device manufacturing method
US20050193944A1 (en) * 2004-03-04 2005-09-08 Asml Netherlands B.V. Printing apparatus and device manufacturing method
US20050211161A1 (en) * 2004-03-04 2005-09-29 Asml Netherlands B.V. Printing apparatus and device manufacturing method
US20050202350A1 (en) * 2004-03-13 2005-09-15 Colburn Matthew E. Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
US7435074B2 (en) * 2004-03-13 2008-10-14 International Business Machines Corporation Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning
US7982312B2 (en) * 2004-03-13 2011-07-19 International Business Machines Corporation Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
US20080303160A1 (en) * 2004-03-13 2008-12-11 Colburn Matthew E Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
US20050212022A1 (en) * 2004-03-24 2005-09-29 Greer Edward C Memory cell having an electric field programmable storage element, and method of operating same
US20050236360A1 (en) * 2004-04-27 2005-10-27 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US7140861B2 (en) 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US20050253307A1 (en) * 2004-05-11 2005-11-17 Molecualr Imprints, Inc. Method of patterning a conductive layer on a substrate
US20050260848A1 (en) * 2004-05-21 2005-11-24 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US20050263077A1 (en) * 2004-05-28 2005-12-01 Board Of Regents, The University Of Texas System Adaptive shape substrate support method
US7504268B2 (en) 2004-05-28 2009-03-17 Board Of Regents, The University Of Texas System Adaptive shape substrate support method
US8563438B2 (en) 2004-06-01 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20100105206A1 (en) * 2004-06-01 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US8647554B2 (en) 2004-06-15 2014-02-11 Molecular Imprints, Inc. Residual layer thickness measurement and correction
US20100286811A1 (en) * 2004-06-15 2010-11-11 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
CN100405085C (en) * 2004-06-28 2008-07-23 鸿富锦精密工业(深圳)有限公司 Method and device for producing optical module
US8366434B2 (en) * 2004-07-20 2013-02-05 Molecular Imprints, Inc. Imprint alignment method, system and template
US20100278955A1 (en) * 2004-07-20 2010-11-04 Molecular Imprints, Inc. Imprint Alignment Method, System and Template
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US20060017876A1 (en) * 2004-07-23 2006-01-26 Molecular Imprints, Inc. Displays and method for fabricating displays
US20060030067A1 (en) * 2004-08-06 2006-02-09 Industrial Technology Research Institute Method for manufacturing organic thin-film transistor with plastic substrate
US7259047B2 (en) * 2004-08-06 2007-08-21 Industrial Technology Research Institute Method for manufacturing organic thin-film transistor with plastic substrate
US7309225B2 (en) 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US20060032437A1 (en) * 2004-08-13 2006-02-16 Molecular Imprints, Inc. Moat system for an imprint lithography template
US20060035464A1 (en) * 2004-08-13 2006-02-16 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate
US7105452B2 (en) 2004-08-13 2006-09-12 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate with an etching chemistry
US20060035029A1 (en) * 2004-08-16 2006-02-16 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US7282550B2 (en) 2004-08-16 2007-10-16 Molecular Imprints, Inc. Composition to provide a layer with uniform etch characteristics
US20060036051A1 (en) * 2004-08-16 2006-02-16 Molecular Imprints, Inc. Composition to provide a layer with uniform etch characteristics
US7939131B2 (en) 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US20060063277A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US20060060557A1 (en) * 2004-09-21 2006-03-23 Sreenivasan Sidlgata V Reverse tone patterning on surfaces having surface planarity perturbations
US7241395B2 (en) 2004-09-21 2007-07-10 Molecular Imprints, Inc. Reverse tone patterning on surfaces having planarity perturbations
US7041604B2 (en) 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US20060063112A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US20060063359A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Patterning substrates employing multi-film layers defining etch differential interfaces
US7252777B2 (en) 2004-09-21 2007-08-07 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US20060063387A1 (en) * 2004-09-21 2006-03-23 Molecular Imprints, Inc. Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy
US7981481B2 (en) 2004-09-23 2011-07-19 Molecular Imprints, Inc. Method for controlling distribution of fluid components on a body
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7244386B2 (en) 2004-09-27 2007-07-17 Molecular Imprints, Inc. Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US20060111454A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
US7785096B2 (en) 2004-11-30 2010-08-31 Molecular Imprints, Inc. Enhanced multi channel alignment
US20060126058A1 (en) * 2004-11-30 2006-06-15 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
US20090169662A1 (en) * 2004-11-30 2009-07-02 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7880872B2 (en) 2004-11-30 2011-02-01 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US20060115999A1 (en) * 2004-12-01 2006-06-01 Molecular Imprints, Inc. Methods of exposure for the purpose of thermal management for imprint lithography processes
US20060113697A1 (en) * 2004-12-01 2006-06-01 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US7811505B2 (en) 2004-12-07 2010-10-12 Molecular Imprints, Inc. Method for fast filling of templates for imprint lithography using on template dispense
US8131078B2 (en) 2004-12-23 2012-03-06 Asml Netherlands B.V. Imprint lithography
US7676088B2 (en) 2004-12-23 2010-03-09 Asml Netherlands B.V. Imprint lithography
US20100050893A1 (en) * 2004-12-23 2010-03-04 Asml Netherlands B.V. Imprint lithography
US20060159305A1 (en) * 2004-12-23 2006-07-20 Asml Netherlands B.V. Imprint lithography
US8571318B2 (en) 2004-12-23 2013-10-29 Asml Netherlands B.V. Imprint lithography
US7636475B2 (en) 2004-12-23 2009-12-22 Asml Netherlands B.V. Imprint lithography
US20060137555A1 (en) * 2004-12-23 2006-06-29 Asml Netherlands B.V. Imprint lithography
US20060150849A1 (en) * 2004-12-30 2006-07-13 Asml Netherlands B.V. Imprint lithography
US20060144814A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US20060144275A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US9341944B2 (en) 2004-12-30 2016-05-17 Asml Netherlands B.V. Imprint lithography
US20100139862A1 (en) * 2004-12-30 2010-06-10 Asml Netherlands B.V. Imprint lithography
US20060144274A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US7686970B2 (en) 2004-12-30 2010-03-30 Asml Netherlands B.V. Imprint lithography
US7490547B2 (en) 2004-12-30 2009-02-17 Asml Netherlands B.V. Imprint lithography
US7354698B2 (en) 2005-01-07 2008-04-08 Asml Netherlands B.V. Imprint lithography
US20060154179A1 (en) * 2005-01-07 2006-07-13 Asml Netherlands B. V. Imprint lithography
US20060172553A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Method of retaining a substrate to a wafer chuck
US20070190200A1 (en) * 2005-01-31 2007-08-16 Molecular Imprints, Inc. Chucking system comprising an array of fluid chambers
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060180952A1 (en) * 2005-02-17 2006-08-17 Asml Netherlands B.V. Imprint lithography
US7922474B2 (en) 2005-02-17 2011-04-12 Asml Netherlands B.V. Imprint lithography
US7906059B2 (en) 2005-03-07 2011-03-15 Asml Netherlands B.V. Imprint lithography
US7523701B2 (en) 2005-03-07 2009-04-28 Asml Netherlands B.V. Imprint lithography method and apparatus
US20060196377A1 (en) * 2005-03-07 2006-09-07 Asml Netherlands B.V. Imprint lithography
US7611348B2 (en) 2005-04-19 2009-11-03 Asml Netherlands B.V. Imprint lithography
US20060230959A1 (en) * 2005-04-19 2006-10-19 Asml Netherlands B.V. Imprint lithography
US20060231979A1 (en) * 2005-04-19 2006-10-19 Asml Netherlands B.V. Imprint lithography
US8349238B2 (en) 2005-04-19 2013-01-08 Asml Netherlands B.V. Imprint lithography
US7762186B2 (en) 2005-04-19 2010-07-27 Asml Netherlands B.V. Imprint lithography
US20060254446A1 (en) * 2005-05-16 2006-11-16 Asml Netherlands B.V. Imprint lithography
US7931844B2 (en) 2005-05-16 2011-04-26 Asml Netherlands B.V. Imprint lithography
US7442029B2 (en) 2005-05-16 2008-10-28 Asml Netherlands B.V. Imprint lithography
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US7692771B2 (en) 2005-05-27 2010-04-06 Asml Netherlands B.V. Imprint lithography
US8241550B2 (en) 2005-05-27 2012-08-14 Asml Netherlands B.V. Imprint lithography
US20060275524A1 (en) * 2005-05-27 2006-12-07 Asml Netherlands B.V. Imprint lithography
US20060267231A1 (en) * 2005-05-27 2006-11-30 Asml Netherlands B.V. Imprint lithography
US7618250B2 (en) 2005-05-27 2009-11-17 Asml Netherlands B.V. Imprint lithography
US20060268256A1 (en) * 2005-05-27 2006-11-30 Asml Netherlands B.V. Imprint lithography
US7418902B2 (en) 2005-05-31 2008-09-02 Asml Netherlands B.V. Imprint lithography including alignment
US7377764B2 (en) 2005-06-13 2008-05-27 Asml Netherlands B.V. Imprint lithography
US20060280829A1 (en) * 2005-06-13 2006-12-14 Asml Netherlands B.V. Imprint lithography
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US7256131B2 (en) 2005-07-19 2007-08-14 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US20070017899A1 (en) * 2005-07-19 2007-01-25 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US20070018360A1 (en) * 2005-07-21 2007-01-25 Asml Netherlands B.V. Imprint lithography
US7708924B2 (en) 2005-07-21 2010-05-04 Asml Netherlands B.V. Imprint lithography
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US20070021520A1 (en) * 2005-07-22 2007-01-25 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US20070023976A1 (en) * 2005-07-26 2007-02-01 Asml Netherlands B.V. Imprint lithography
US20070071582A1 (en) * 2005-08-25 2007-03-29 Molecular Imprints, Inc. System to transfer a template transfer body between a motion stage and a docking plate
US7665981B2 (en) 2005-08-25 2010-02-23 Molecular Imprints, Inc. System to transfer a template transfer body between a motion stage and a docking plate
US7670534B2 (en) 2005-09-21 2010-03-02 Molecular Imprints, Inc. Method to control an atmosphere between a body and a substrate
US8142703B2 (en) 2005-10-05 2012-03-27 Molecular Imprints, Inc. Imprint lithography method
US20090136654A1 (en) * 2005-10-05 2009-05-28 Molecular Imprints, Inc. Contact Angle Attenuations on Multiple Surfaces
EP1780815A2 (en) * 2005-10-31 2007-05-02 Fuji Electric Holdings Co., Ltd. Organic thin film transistor and manufacturing method thereof
US20070131927A1 (en) * 2005-10-31 2007-06-14 Fuji Electric Holdings Co., Ltd. Thin film transistor and manufacturing method thereof
EP1780815A3 (en) * 2005-10-31 2008-02-27 Fuji Electric Holdings Co., Ltd. Organic thin film transistor and manufacturing method thereof
US20070102838A1 (en) * 2005-11-04 2007-05-10 Asml Netherlands B.V. Imprint lithography
US10025206B2 (en) 2005-11-04 2018-07-17 Asml Netherlands B.V. Imprint lithography
US9864271B2 (en) 2005-11-04 2018-01-09 Asml Netherlands B.V. Imprint lithography
US20070102844A1 (en) * 2005-11-04 2007-05-10 Asml Netherlands B.V. Imprint lithography
US7878791B2 (en) 2005-11-04 2011-02-01 Asml Netherlands B.V. Imprint lithography
US8011915B2 (en) 2005-11-04 2011-09-06 Asml Netherlands B.V. Imprint lithography
US9778563B2 (en) 2005-11-04 2017-10-03 Asml Netherlands B.V. Imprint lithography
US20070126150A1 (en) * 2005-12-01 2007-06-07 Molecular Imprints, Inc. Bifurcated contact printing technique
US20070126156A1 (en) * 2005-12-01 2007-06-07 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US20070132152A1 (en) * 2005-12-08 2007-06-14 Molecular Imprints, Inc. Method and System for Double-Sided Patterning of Substrates
US7670529B2 (en) 2005-12-08 2010-03-02 Molecular Imprints, Inc. Method and system for double-sided patterning of substrates
US20070141191A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US8753557B2 (en) 2005-12-21 2014-06-17 Asml Netherlands B.V. Imprint lithography
US20090212462A1 (en) * 2005-12-21 2009-08-27 Asml Netherlans B.V. Imprint lithography
US7517211B2 (en) 2005-12-21 2009-04-14 Asml Netherlands B.V. Imprint lithography
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US9610727B2 (en) 2005-12-21 2017-04-04 Asml Netherlands B.V. Imprint lithography
US8100684B2 (en) 2005-12-21 2012-01-24 Asml Netherlands B.V. Imprint lithography
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US20070170617A1 (en) * 2006-01-20 2007-07-26 Molecular Imprints, Inc. Patterning Substrates Employing Multiple Chucks
US7780893B2 (en) 2006-04-03 2010-08-24 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
US20070228608A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Preserving Filled Features when Vacuum Wiping
US20070228593A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
US20070243655A1 (en) * 2006-04-18 2007-10-18 Molecular Imprints, Inc. Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US20090250840A1 (en) * 2006-04-18 2009-10-08 Molecular Imprints, Inc. Template Having Alignment Marks Formed of Contrast Material
US7854867B2 (en) 2006-04-21 2010-12-21 Molecular Imprints, Inc. Method for detecting a particle in a nanoimprint lithography system
US20070246850A1 (en) * 2006-04-21 2007-10-25 Molecular Imprints, Inc. Method for Detecting a Particle in a Nanoimprint Lithography System
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US20080003827A1 (en) * 2006-06-30 2008-01-03 Asml Netherlands B.V. Imprintable medium dispenser
US8318253B2 (en) 2006-06-30 2012-11-27 Asml Netherlands B.V. Imprint lithography
US8486485B2 (en) 2006-06-30 2013-07-16 Asml Netherlands B.V. Method of dispensing imprintable medium
US8015939B2 (en) 2006-06-30 2011-09-13 Asml Netherlands B.V. Imprintable medium dispenser
US20080011934A1 (en) * 2006-06-30 2008-01-17 Asml Netherlands B.V. Imprint lithography
US20080110557A1 (en) * 2006-11-15 2008-05-15 Molecular Imprints, Inc. Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces
KR101341782B1 (en) * 2006-12-29 2013-12-13 엘지디스플레이 주식회사 System for Molding, Method for Foming Pattern and Method for Manufacturing Liquid Crystal Display Device
US8932041B2 (en) * 2006-12-29 2015-01-13 Lg Display Co., Ltd. Mold structure, patterning method using the same, and method of fabricating liquid crystal display device
US20080157414A1 (en) * 2006-12-29 2008-07-03 Jin Wuk Kim Mold structure, patterning method using the same, and method of fabricating liquid crystal display device
US20100108639A1 (en) * 2007-03-30 2010-05-06 Pioneer Corporation Imprinting mold and method of producing imprinting mold
US20090038636A1 (en) * 2007-08-09 2009-02-12 Asml Netherlands B.V. Cleaning method
US7854877B2 (en) 2007-08-14 2010-12-21 Asml Netherlands B.V. Lithography meandering order
US20090057267A1 (en) * 2007-09-05 2009-03-05 Asml Netherlands B.V. Imprint lithography
US8323541B2 (en) 2007-09-05 2012-12-04 Asml Netherlands B.V. Imprint lithography
US8144309B2 (en) 2007-09-05 2012-03-27 Asml Netherlands B.V. Imprint lithography
KR101413233B1 (en) * 2007-09-14 2014-06-30 삼성전자 주식회사 Nano-imprint lithography process
US20130307195A1 (en) * 2007-11-30 2013-11-21 Showa Denko K.K. Curable composition for transfer materials and method for forming micropattern using the curable composition
US8173061B2 (en) * 2009-04-22 2012-05-08 Kabushiki Kaisha Toshiba Pattern transfer method
US20100270711A1 (en) * 2009-04-22 2010-10-28 Masahiro Kanno Pattern transfer method
US9120265B2 (en) * 2009-06-09 2015-09-01 Tsinghua University Nanoimprint resist, nanoimprint mold and nanoimprint lithography
US20130087528A1 (en) * 2009-06-09 2013-04-11 Zhen-Dong Zhu Nanoimprint resist, nanoimprint mold and nanoimprint lithography
FR2959833A1 (en) * 2010-05-07 2011-11-11 Inst Nat Sciences Appliq METHOD FOR TOPOGRAPHIC AND ELECTRIC NANO-STRUCTURE OF ELECTRONIC POLYMER THIN FILM AND ELECTRONIC POLYMER THIN FILM OBTAINED
WO2011138540A1 (en) 2010-05-07 2011-11-10 Institut National Des Sciences Appliquees De Toulouse Method of topographical and electrical nanostructuration of a thin film of electret polymer and thin film of electret polymer obtained
JP2013530066A (en) * 2010-05-07 2013-07-25 アンスティチュ ナショナル デ シアンス アプリケ トゥールーズ Topographic and electrical nanostructuring method of electret polymer thin film and resulting electret polymer thin film
US20130106201A1 (en) * 2010-05-07 2013-05-02 Centre National De La Recherche Scientifique (C.N.R.S.) Method of topographical and electrical nanostructuration of a thin film of electret polymer and thin film of electret polymer obtained
US20120009791A1 (en) * 2010-07-08 2012-01-12 Zhang Yingkang Pattern formation method
US10286615B2 (en) 2011-09-29 2019-05-14 Sharp Kabushiki Kaisha Molding apparatus and molding method
US9302424B2 (en) 2013-01-03 2016-04-05 Elwha, Llc Nanoimprint lithography
US9561603B2 (en) 2013-01-03 2017-02-07 Elwha, Llc Nanoimprint lithography
US9962863B2 (en) * 2013-01-03 2018-05-08 Elwha Llc Nanoimprint lithography
US20140183783A1 (en) * 2013-01-03 2014-07-03 Elwha Llc Nanoimprint lithography
US20160203904A1 (en) * 2014-03-31 2016-07-14 International Business Machines Corporation Thin film inductor with extended yokes
US20160129612A1 (en) * 2014-11-11 2016-05-12 Canon Kabushiki Kaisha Imprint method, imprint apparatus, mold, and article manufacturing method
US10620532B2 (en) * 2014-11-11 2020-04-14 Canon Kabushiki Kaisha Imprint method, imprint apparatus, mold, and article manufacturing method
US10593603B2 (en) 2018-03-16 2020-03-17 Sandisk Technologies Llc Chemical mechanical polishing apparatus containing hydraulic multi-chamber bladder and method of using thereof
WO2019210976A1 (en) * 2018-05-04 2019-11-07 Ev Group E. Thallner Gmbh Stamp and method for embossing
CN112213917A (en) * 2019-07-10 2021-01-12 长春工业大学 Uniform electric field assisted nanoimprint forming device and method
WO2022055626A3 (en) * 2020-06-26 2022-06-09 The Research Foundation For The State University Of New York Thermoplastic components, systems, and methods for forming same
CN115071176A (en) * 2022-05-24 2022-09-20 华南理工大学 Device and method for directionally arranging polymer-based filler coupled by electric field and pressure

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