US20010038950A1 - Mask structure exposure method - Google Patents
Mask structure exposure method Download PDFInfo
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- US20010038950A1 US20010038950A1 US09/161,372 US16137298A US2001038950A1 US 20010038950 A1 US20010038950 A1 US 20010038950A1 US 16137298 A US16137298 A US 16137298A US 2001038950 A1 US2001038950 A1 US 2001038950A1
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- mask
- exposure
- patterned
- titanium oxide
- pattern
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Links
- 238000000034 method Methods 0.000 title claims description 35
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 137
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 137
- 239000006096 absorbing agent Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 239000011941 photocatalyst Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 abstract description 9
- 239000000428 dust Substances 0.000 abstract description 6
- 238000009825 accumulation Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 101
- 238000004140 cleaning Methods 0.000 description 21
- 230000005469 synchrotron radiation Effects 0.000 description 10
- 238000000354 decomposition reaction Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 230000003014 reinforcing effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- -1 alkyl titanate Chemical compound 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Abstract
A mask structure to be used for X-ray exposure or the like in manufacturing semiconductor devices prevents contaminants from adhering and accumulating on the surface of a mask, thereby extending the life of the mask. In this mask structure, titanium oxide films are formed on front and back pellicles that protect a mask, composed of a support film and an X-ray absorber, from dust or the like. Titanium oxide decomposes contaminants by functioning as a photocatalyst, and prevents the adhesion and accumulation of contaminants by an antistatic function based on photoconductivity. When a titanium oxide film is formed on the surface of the mask itself, it is preferable that the film be formed outside the exposure area or the like.
Description
- 1. Field of the Invention
- The present invention relates to a mask structure for use in forming a desired pattern on a substrate, such as a semiconductor substrate, an exposure method and an apparatus for forming the pattern by using the mask structure, a semiconductor device manufactured by using the mask structure, and a semiconductor device manufacturing method.
- 2. Description of the Related Art
- In manufacturing a device having fine patterns formed thereon, for example, a semiconductor device such as a semiconductor integrated circuit, a micromachine, or a thin-film magnetic head, generally, a desired pattern is formed on a substrate, which serves as a material to be patterned, by radiating light (e.g., visible light, ultraviolet rays, X-rays or the like) onto the substrate via a mask. In manufacturing, for example, a semiconductor integrated circuit, a mask is prepared, the mask corresponding to a desired circuit pattern to be formed on the semiconductor substrate, and the semiconductor substrate, having a resist thereon, is irradiated with light such as X-rays, via the mask. The resist on the substrate is selectively exposed, and the circuit pattern is transferred thereon. Through subsequent etching and film-deposition processes, a desired circuit is formed on the semiconductor substrate. A description will be given below of the manufacturing of the aforementioned device, having fine patterns, with reference to an example in which a semiconductor integrated circuit is formed.
- With the recent increases in the density and the operating speed of semiconductor integrated circuits, the line width of integrated circuit patterns has decreased, and conventional semiconductor manufacturing methods need to have a higher performance. For that purpose, under development as a printing apparatus (e.g., an exposure apparatus) is a stepper, which uses exposure light having a shorter wavelength than before, such as light from a KrF excimer laser having a wavelength of 248 nm, light from an ArF excimer laser having a wavelength of 193 nm, or X-rays having a wavelength of 0.2 nm to 15 nm. Furthermore, a chemically amplified resist using an acid catalyst is finding increased use as a resist in transferring a desired pattern onto a material to be patterned.
- As the patterns become finer, it will be increasingly difficult to protect against dust generated in the processing. The limitations on the size and amount of normal refuse are becoming more strict, and the sensitivity in processing chemical substances is increasing. Semiconductor integrated circuits are fabricated in a clean room environment, and chemical contamination seriously affects that environment. Chemical contamination is caused by products being decomposed from a resist, substances being produced in resist developing and cleaning processes, adhesives used for the mask, and volatile substances from fixtures, such as the material on walls of the equipment being used.
- When exposure is performed for a long time with short-wavelength light, such as far-ultraviolet light or X-rays, in such a chemically contaminated environment, the contamination of the mask surface, namely, deposits thereon, changes the transmittance, reflectance, and scattering properties of the mask. In particular, when a chemically amplified resist is used, an acid generator or acid, and decomposition products evaporate during or after exposure, which accelerates the contamination of the mask. Above all, contamination of the mask is a serious problem in projection exposure using X-rays or the like, because a material to be patterned is spaced from the mask by only several tens of micrometers or less. While these deposits seem to depend on the processing environment, they are not uniform in shape or composition, and the details thereof are not clear. It may be conjectured that the deposits are not produced by a simple photochemical reaction, but by complicated actions of the processes of decomposition, recombination, multidimensional reaction, accumulation, crystallization, and the like. Though it may be possible to remove the deposits by cleaning, the cleaning is considerably difficult, particularly in an X-ray mask, since an absorber is shaped with a high aspect ratio (i.e., the height is smaller than the width), and not all deposits can be removed by cleaning. Further, support film in an X-ray mask is weak, because of its small thickness. Therefore, the number of times of cleaning of the mask itself needs to be reduced.
- Accordingly, it is an object of the present invention to provide a mask structure in which the number of times of cleaning of a mask is reduced or the need for cleaning is eliminated altogether by preventing contaminants from adhering and accumulating onto the mask surface, so that the life of the mask is thereby extended, and to provide an exposure method and apparatus, a semiconductor device, and a semiconductor device manufacturing method using the mask structure.
- In order to achieve the above object, the present invention provides a mask structure including a mask for use in transferring a desired pattern onto a substrate by exposure, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle.
- The mask may be a reflective type or a transmission mask.
- Preferably, the titanium oxide film is formed on a section of the surface of the pellicle other than a section where light is radiated when the substrate is exposed.
- The mask structure is used for exposure using X-rays.
- The present invention provides an exposure method including the steps of providing a mask structure having a mask with a desired pattern, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle, and transferring the pattern on the mask onto a material to be patterned by exposure.
- Preferably, the transfer by exposure is performed by using a chemically amplified resist on the material to be patterned.
- Preferably, the transfer by exposure is performed with X-rays.
- The present invention also provides an exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask, and a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, the exposure apparatus including mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the surface of the pellicle, and means for holding the material to be patterned.
- The exposure apparatus may further include an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
- The exposure apparatus may further include a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure, and an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
- The present invention also provides a semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle.
- The present invention also provides a semiconductor device manufacturing method including the steps of providing a mask structure having a mask with a desired pattern, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle, transferring by exposure the pattern on the mask onto a material to be patterned, and processing the patterned material.
- The present invention also provides a mask structure including a mask for use in transferring a desired pattern onto a substrate by exposure, the mask having an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area.
- The energy beam may include X-rays.
- The present invention also provides an exposure method including the steps of providing a mask structure including a mask with a desired pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area, and transferring by exposure the pattern on the mask onto a material to be patterned.
- Preferably, the transfer by exposure is performed by using a chemically amplified resist on the material to be patterned.
- Preferably, the transfer by exposure is performed with X-rays.
- The present invention also provides an exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure having the mask with the pattern and an exposure area to be irradiated with an energy beam, the exposure apparatus including mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the surface of the mask, and the titanium oxide film is formed outside the exposure area, and means for holding the material to be patterned.
- The exposure apparatus may further include an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
- The exposure apparatus may further include a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure, and an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
- The present invention also provides a semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask having the pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area.
- The present invention also provides a semiconductor device manufacturing method, including the steps of providing a mask structure including a mask having a pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area, transferring by exposure the pattern on the mask onto a material to be patterned, and processing the patterned material.
- The present invention also provides a mask structure including a mask for use in transferring a desired pattern onto a substrate by exposure, the mask having a film and an absorber pattern formed on the film to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern.
- The energy beam may include X-rays.
- The present invention also provides an exposure method including the steps of providing a mask structure including a mask with a desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern, and transferring by exposure the pattern on the mask onto a material to be patterned.
- Preferably, the transfer by exposure is performed by using a chemically amplified resist on the material to be patterned.
- Preferably, the transfer by exposure is performed with X-rays.
- The present invention also provides an exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask with the pattern that has a film and an absorber pattern formed on the film to be irradiated with an energy beam, the exposure apparatus including mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern, and means for holding the material to be patterned.
- The exposure apparatus may further include an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
- The exposure apparatus may further include a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure, and an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
- The present invention also provides a semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask with the desired pattern that has a film and an absorber pattern formed on the film to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern.
- The present invention also provides a semiconductor device manufacturing method including the steps of providing a mask structure including a mask with a desired pattern that has a film and an absorber pattern formed on the film to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern, transferring by exposure the pattern on the mask onto a material to be patterned, and processing the patterned material.
- The present invention also provides a mask structure including a mask for use in transferring a desired pattern onto a substrate, the mask including an exposure area to be irradiated with an energy beam, and an absorber pattern for the energy beam being formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern.
- The energy beam may include X-rays.
- The present invention also provides an exposure method including the steps of providing a mask structure having a mask with a pattern, the mask including an exposure area to be irradiated with an energy beam, and an absorber pattern for the energy beam being formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern, and transferring by exposure the pattern on the mask onto a material to be patterned.
- Preferably, the transfer by exposure is performed by using a chemically amplified resist on the material to be patterned.
- Preferably, the transfer by exposure is performed with X-rays.
- The present invention also provides an exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask having a pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern, the exposure apparatus including mask structure holding means for holding the mask structure, and means for holding the material to be patterned.
- The exposure apparatus may further include an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
- The exposure apparatus may further include a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure, and an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
- The present invention also provides a semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, wherein the mask structure includes the mask having the pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern.
- The present invention also provides a semiconductor device manufacturing method including the steps of providing a mask structure including a mask having a pattern, an exposure area to be irradiated with an energy beam and an absorber pattern formed on the exposure area for the energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern, transferring by exposure the pattern on the mask onto a material to be patterned, and processing the patterned material.
- The present invention also provides an exposure apparatus for transferring by exposure a desired pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask covered or not covered with a pellicle, and a titanium oxide film formed thereon, the exposure apparatus including a first chamber in which the pattern is transferred onto the material to be patterned through exposure by using the mask structure, and a second chamber containing an auxiliary light source for irradiating the titanium oxide film to cause the titanium oxide film to act as a photocatalyst.
- Preferably, the second chamber is used to store the mask structure.
- Further objects, features and advantages of the present invention will become apparent from the following description of the preferred embodiments with reference to the attached drawings.
- FIG. 1 is a cross-sectional view showing the configuration of a mask structure according to a first embodiment of the present invention;
- FIG. 2 is a cross-sectional view showing the configuration of a mask structure according to a second embodiment of the present invention;
- FIG. 3 is a cross-sectional view showing the configuration of a mask structure according to a third embodiment of the present invention;
- FIG. 4 is a cross-sectional view showing the configuration of a mask structure according to a fourth embodiment of the present invention;
- FIG. 5 is a cross-sectional view showing the configuration of a mask structure according to a fifth embodiment of the present invention;
- FIG. 6 is a cross-sectional view showing the configuration of a mask structure according to a sixth embodiment of the present invention;
- FIG. 7 is a schematic structural view showing the principal part of an X-ray exposure apparatus according to a seventh embodiment of the present invention;
- FIG. 8 is a top view of the X-ray exposure apparatus shown in FIG. 7;
- FIG. 9 is a flowchart showing a procedure for manufacturing a semiconductor device according to an eighth embodiment of the present invention; and
- FIG. 10 is a detailed flowchart of a wafer process in the semiconductor device manufacturing procedure shown in FIG. 9.
- From a study of the countermeasures for preventing the adhesion and accumulation of contaminants onto the surface of a mask, with repeated trial and error, the present inventors have found that the above-mentioned problems can be solved by forming a thin film of titanium oxide on the surface of the mask or the surface of a pellicle mounted on the mask.
- In a mask structure according to the preferred embodiments of the present invention, which will be described later, a titanium oxide film may be formed on the part of the mask or the pellicle other than the part that is irradiated with light for exposing a substrate. While the mask structure of the present invention is of a type used for X-ray exposure, it may be a mask structure for use with exposure techniques using light other than X-rays.
- In the following embodiments, the titanium oxide film may be formed on the surface of the mask or the pellicle by, for example, evaporation, or a method of heating and hydrolyzing alkyl titanate, which has been previously applied.
- Titanium oxide typically functions as a photocatalyst when irradiated with light having short wavelengths, such as ultraviolet rays and X-rays, and chemically decomposes various types of substances. Titanium oxide is also effective as a photoconductor. When irradiated, titanium oxide is made conductive and serves an antistatic function, thereby preventing the adhesion of contaminants. Namely, when the surface of the pellicle is provided with a titanium oxide thin film, it is prevented from being contaminated by the decomposition and antistatic functions of the titanium oxide. This makes it possible to reduce the number of times of replacing the pellicle and cleaning of the mask or to eliminate the need for such replacing and cleaning, and to thereby extend the life of the mask. Similarly, when the surface of the mask is provided with a titanium oxide thin film, it is prevented from being contaminated by the decomposition and antistatic functions of the titanium oxide, which makes it possible to reduce the number of times of cleaning of the mask or to eliminate the need for cleaning altogether, thereby extending the life of the mask.
- According to an exposure method and apparatus in which a desired pattern is transferred onto a material to be patterned by exposure using such a mask structure, it is possible to achieve high-accuracy printing that is suitable for mass production without any influence of mask contamination. In addition, high-performance semiconductor devices can be mass-produced by transferring a desired pattern onto a substrate to be processed through exposure using this mask structure, and processing the substrate.
- The preferred embodiments of the present invention will now be described with reference to the attached drawings. In general, the first to third embodiments relate to a mask structure in which a titanium oxide thin film is formed on the surface of a pellicle for preventing mask contamination, the fourth to sixth embodiments relate to a mask structure in which a titanium oxide thin film is formed on the surface of a mask, the seventh embodiment relates to an X-ray exposure apparatus using the mask structure of the present invention, and the eighth embodiment relates to the manufacturing of a semiconductor device with the X-ray exposure apparatus of the seventh embodiment.
- <First Embodiment>
- FIG. 1 is a cross-sectional view of a mask structure according to a first embodiment of the present invention. This mask structure is an X-ray mask structure that is suitable for X-ray exposure.
- This X-ray mask structure comprises a holding
frame 1 made of Si (silicon) and having a thickness of 2 mm, an X-raytransmissive support film 2 made of SiC having a thickness of 2.0 μm that is held by the holdingframe 1 and formed by CVD (chemical vapor deposition), anX-ray absorber 3 made of a Ta (tantalum) film that is formed on thesupport film 2 by sputtering and processed into a desired pattern, and a reinforcingmember 4, made of SiC, which is bonded to the holdingframe 1 with an adhesive 5. - A front pellicle7 (placed on the side of a material to be patterned such as a semiconductor substrate), bonded onto a
frame 6, is detachably mounted on the reinforcingmember 4 with a pressure-sensitive adhesive 9 so that it is spaced from thesupport film 2 by 5 μm. Theframe 6 is made of Al (aluminum), and is provided withholes 8 for pressure adjustment. Each of the pressure-adjustment holes 8 has a filter (not shown) for preventing the entry of dust. Thefront pellicle 7 is made of polyimide having a thickness of 0.8 μm, and its flatness is controlled to 1 μm or less. On thefront pellicle 7, atitanium oxide film 14 having a thickness of 20 nm is formed by resistance heating evaporation or EB (electron beam) evaporation. Preferably, thetitanium oxide film 14 has the smallest possible thickness that ensures its function as a photocatalyst, in order to reduce the absorption of X-rays. Specifically, a preferable thickness ranges from about 10 nm to about 100 nm. - On the side of the reinforcing
member 4, aback pellicle 11, bonded to aframe 10, is detachably mounted with a pressure-sensitive adhesive 13 so that it is spaced from thesupport film 2 by 5 mm. Theframe 10 is made of Al, and is provided withholes 12 for pressure adjustment. Each of theholes 12 has a filter (not shown) for preventing the entry of dust. Theback pellicle 11 is made of polyimide having a thickness of 0.8 μm, similar to thefront pellicle 7, and has atitanium oxide film 15 having a thickness of 20 nm on its surface. - The
titanium oxide films pellicles pellicles - Furthermore, titanium oxide is photoconductive, and is made conductive by the aforementioned exposure or radiation of auxiliary light, thereby preventing dust and the like from adhering to the polyimide that forms the pellicle. Since the titanium oxide film on the pellicle is less strictly required to have resistance to exposure than an antistatic film directly formed on the mask, the setting of its film deposition conditions is easy. In addition, the
support film 2 may become broken, because it is inorganic. Nevertheless, if it becomes broken, the pellicle film also serves as a shatterproof film. This is an added benefit. - The decomposition and antistatic functions of the titanium oxide mentioned above make it possible to prevent the surfaces of the mask and the pellicle from being contaminated, and to reduce the number of times of replacing the pellicle and cleaning of the mask, or to eliminate the need for replacing and cleaning altogether. Thereby, it is possible to extend the life of the mask, and to provide an X-ray mask structure that is suitable for mass production.
- <Second Embodiment>
- FIG. 2 is a cross-sectional view of a mask structure according to a second embodiment of the present invention. This mask structure is an X-ray mask structure that is suitable for X-ray exposure.
- This X-ray mask structure comprises a holding
frame 1 having a thickness of 2 mm, which is made of Si, an X-raytransmissive support film 2 made of SiN having a thickness of 2.0 μm, which is held by the holdingframe 1 and formed by CVD, anX-ray absorber 3 made of a W (tungsten) film that is formed on thesupport film 2 and processed into a desired pattern, and a reinforcingmember 4 made of borosilicate glass (trade name: Pyrex) and bonded to the holdingframe 1 by anode coupling. The X-ray mask structure has afront pellicle 7 and aback pellicle 11 similar to the X-ray mask structure of the first embodiment. The front and back pellicles 7 and 11 are made of polyphenylene sulfide, which is an electroconductive and radiation-resistant polymer.Holes 20 for pressure adjustment are formed so that they penetrate through the reinforcingmember 4 and the holdingframe 1. Atitanium oxide film 14 having a thickness of 100 nm is formed on only the peripheral section (i.e., the section outside the exposure area) of thefront pellicle 7 by applying and baking alkyl titanate. In general, there are few deposits on the back side. Therefore, theback pellicle 11 may have no titanium oxide film, as shown in FIG. 2, or may have a titanium oxide film (not shown), similar to the first embodiment. - As mentioned above, the
titanium oxide film 14 formed on thefront pellicle 7 functions as a photocatalyst when irradiated with auxiliary light (e.g., light from a mercury lamp, a black light or the like) without affecting a material to be patterned (i.e., a wafer), thereby decomposing contaminants adhering to thefront pellicle 7. For example, this mask structure may be irradiated with auxiliary light in a mask cassette during storage. Titanium oxide can maintain its function as a photocatalyst with respect to ambient room light from a fluorescent lamp or the like. - In this embodiment, since the
titanium oxide film 14 is formed outside the exposure area on thefront pellicle 7, it can be given a thickness that is essential to and sufficient for the function as a photocatalyst, without causing the attenuation of X-rays due to absorption by titanium oxide, or a change in the titanium oxide due to irradiation with X-rays. - The decomposition and antistatic functions of titanium oxide mentioned above make it possible to prevent the surfaces of the mask and the pellicle from being contaminated, and to reduce the number of times of replacing the pellicle and cleaning of the mask, or to eliminate the need for replacing and cleaning altogether. Thereby, it is possible to extend the life of the mask, and to provide an X-ray mask structure that is suitable for mass production.
- <Third Embodiment>
- FIG. 3 is a cross-sectional view of a mask structure according to a third embodiment of the present invention. This mask structure is an X-ray mask structure that is suitable for X-ray exposure.
- This X-ray mask structure is a reflective mask comprising a
quartz substrate 16, areflective substrate 17 formed on thequartz substrate 16 and having a Mo (molybdenum)/Si multilayer structure (repeated multilayer structure), and anon-reflective pattern 18 made of tungsten (W) that is formed on thereflective substrate 17. In the reflective mask, a titanium oxide film cannot be formed directly on the surface of the mask, because it may change the reflectivity of the mask. Accordingly, in this embodiment, atitanium oxide film 14 is formed on apellicle 19 that is detachable from the mask, and the X-ray mask structure undergoes exposure with thepellicle 19 detached therefrom. Thepellicle 19 may be made of a polymeric material, or an inorganic material, such as glass. - In the X-ray reflective mask structure of this embodiment, the
pellicle 19 is attached thereto during a non-operation state, so that the decomposition and antistatic functions of the titanium oxide make it possible to prevent the surface of the mask from being contaminated, to reduce the number of times of cleaning, or to eliminate the need for cleaning itself altogether, thereby extending the life of the mask. Thereby, it is possible to provide an X-ray reflective mask structure that is suitable for mass production. - <Fourth Embodiment>
- FIG. 4 is a cross-sectional view of a mask structure according to a fourth embodiment of the present invention. This mask structure is an X-ray mask structure that is suitable for X-ray exposure.
- This X-ray mask structure comprises a holding
frame 31 made of Si and having a thickness of 2 mm, an X-raytransmissive support film 32 made of SiC and having a thickness of 2.0 μm, which is held by the holdingframe 31 and formed by CVD, anX-ray absorber 33 formed of a tungsten (W) film on thesupport film 32 by sputtering and processed into a desired pattern, and a reinforcingmember 34 made of SiC and bonded to the holdingframe 31 with an adhesive 35. - A
titanium oxide film 36, having a thickness of 100 nm, is formed on only the peripheral section (i.e., the section outside the exposure area) on the mask by applying and heating alkyl titanate thereon. - As mentioned above, the
titanium oxide film 36 is formed on the mask, and it functions as a photocatalyst when irradiated with auxiliary light (e.g., light from a mercury lamp, a black light, or the like) without affecting a material to be patterned (i.e., a wafer), thereby decomposing contaminants adhering to the mask. For example, this mask structure may be irradiated with auxiliary light in a mask cassette during storage. Titanium oxide can maintain its function as a photocatalyst with respect to ambient room light from a fluorescent lamp or the like. - In this embodiment, since the
titanium oxide film 36 is formed outside the exposure area on the mask, it can be given a thickness that is essential to and sufficient for the function as a photocatalyst, without causing attenuation of X-rays due to absorption by the titanium oxide, or a change in the titanium oxide due to irradiation with the X-rays. Moreover, the line width control by theX-ray absorber 33 remains easy. - The decomposition and antistatic functions of the titanium oxide mentioned above make it possible to prevent the mask surface from being contaminated, and to reduce the number of times of cleaning of the mask, or to eliminate the need for cleaning altogether. Thereby, it is possible to extend the life of the mask, and to provide an X-ray mask structure that is suitable for mass production.
- <Fifth Embodiment>
- FIG. 5 is a cross-sectional view of a mask structure according to a fifth embodiment of the present invention. This mask structure is an X-ray mask structure that is suitable for X-ray exposure.
- In this X-ray mask structure, a
titanium oxide film 36 is also formed on a section of a mask where anX-ray absorber 33 lies (namely, within the exposure area). Thetitanium oxide film 36 is formed by sputtering using a mesh or the like, whereby its growth is given a directional property. Therefore, thetitanium oxide film 36 is not formed on the side of theX-ray absorber 33, and the linewidth can be easily controlled by theX-ray absorber 33. - <Sixth Embodiment>
- FIG. 6 is a cross-sectional view of a mask structure according to a sixth embodiment of the present invention. This mask structure is an X-ray mask structure that is suitable for X-ray exposure.
- This X-ray mask structure comprises a holding
frame 31 having a thickness of 2 mm and made of Si, an X-raytransmissive support film 32 made of SiC and having a thickness of 2.0 μm, which is held by the holdingframe 31 and formed by CVD, and anX-ray absorber 33 formed of a gold (Au) film that is formed in a desired pattern on thesupport film 32 by plating. If desired, a reinforcing member (not shown) may be bonded to the holdingframe 31. The reinforcing member, which is denoted byreference numeral 34 in FIGS. 4 and 5, may be omitted, if it is not necessary. A resist that has been used in forming theX-ray absorber 33 is stripped after atitanium oxide film 36 is formed, whereby titanium oxide remains only on theX-ray absorber 33 inside the exposure area. Thetitanium oxide film 36 is also formed on the periphery of the mask (i.e., outside the exposure area) in a manner similar to the fourth embodiment. Such a configuration prevents the contrast from being lowered due to attenuation of X-rays resulting from absorption by the titanium oxide. - <Seventh Embodiment>
- A description will now be given of an X-ray exposure apparatus for use in manufacturing microminiature devices (e.g., semiconductor devices, thin-film magnetic heads, and micromachines) by using the mask structure described in the above embodiments. FIG. 7 is a schematic structural view showing the principal part of an X-ray exposure apparatus according to a seventh embodiment of the present invention, and FIG. 8 is a top view of the X-ray exposure apparatus. This X-ray exposure apparatus uses a synchrotron radiation (SR) source as an X-ray source.
-
Synchrotron radiation light 42 emitted from an SR source (storage ring) 41 takes the shape of a sheet beam that spreads in the lateral direction (i.e., the direction in the orbital plane of the SR source 41) so that its light intensity is almost uniform, and that it hardly spreads in the transverse direction. Thesynchrotron radiation light 42 is reflected by aconvex mirror 43 formed by a cylindrical mirror, and is thereby enlarged transversely and turned into a beam having an almost rectangular cross section, whereby a rectangular exposure area is provided. Thesynchrotron radiation light 42, which has been enlarged, is controlled by ashutter 44 so that the exposure within the radiation area is uniform. Thesynchrotron radiation light 42 passed through theshutter 44 is directed to anX-ray mask 45. TheX-ray mask 45 may be a mask structure according to any of the above-mentioned first to sixth embodiments. TheX-ray mask 45 is attracted by vacuum, for example, onto amask stage 47 and is held opposed to awafer 46 that serves as a material to be patterned (i.e., to be exposed). Although theX-ray mask 45 may undergo exposure with a pellicle mounted thereon, the pellicle is not shown in these figures. - The
wafer 46 is held on awafer chuck 48 that is mounted on awafer stage 49. In order to position thewafer 46, thewafer stage 49 is moved. - An
alignment unit 50 comprises an optical system for detecting alignment marks that are formed for positioning on theX-ray mask 45 and thewafer 46, and an arithmetic unit for calculating an offset between theX-ray mask 45 and thewafer 46. TheX-ray mask 45 of the present invention permits high-accuracy positioning. - After the
X-ray mask 45 and thewafer 46 are aligned with each other, a pattern formed on theX-ray mask 45 is transferred onto thewafer 46 by radiating thesynchrotron radiation light 42, which is shaped into a rectangular beam, in a step-and-repeat manner or a scanning manner. - An auxiliary
light source 51, such as a mercury lamp or a black light, is disposed in the vicinity of themask stage 47. Auxiliary light is radiated from the auxiliarylight source 51 to theX-ray mask 45 without affecting thewafer 46 and the resist thereon. - In the X-ray exposure apparatus having such a configuration, the decomposition and antistatic functions of the titanium oxide film on the mask or the pellicle are promoted during exposure using the synchrotron radiation light42 (i.e., in a case in which a titanium oxide film is formed in the exposure area) or radiation of the auxiliary light. This avoids the adhesion of dust or the like to the mask and the pellicle.
- In the X-ray exposure apparatus, a
mask cassette 52 for storing unused masks also includes an auxiliarylight source 51, as shown in FIG. 8. This auxiliarylight source 51 permits the titanium oxide film of the stored X-ray mask to decompose deposits. Decomposed products may be collected through anexhaust vent 53 of themask cassette 52. - This X-ray exposure apparatus achieves high-accuracy X-ray exposure, which is suitable for mass production.
- <Eighth Embodiment>
- A description will now be given of a method of manufacturing a semiconductor device by using the exposure apparatus mentioned above. FIG. 9 is a flowchart showing a procedure for manufacturing a semiconductor device (e.g., a semiconductor chip such as an IC or an LSI, a liquid crystal panel, a CCD, or the like).
- In Step61 (circuit design), a circuit pattern of a semiconductor device is designed. In Step 62 (mask fabrication), a mask structure having the designed circuit pattern formed thereon is fabricated according to the first to sixth embodiments mentioned above. On the other hand, in Step 63 (wafer fabrication), a wafer is fabricated by using a material such as silicon.
- In Step64 (wafer process), called a preprocess, an actual circuit is formed on the wafer by X-ray lithography using the mask structure prepared in
Step 62 and the wafer prepared inStep 63. In Step 65 (assembly), called a postprocess, a semiconductor chip is manufactured by using the wafer having the circuit formed thereon inStep 64, and an assembly process (e.g., dicing, bonding), a packaging process (chip sealing) and the like are included in this step. In step 66 (inspection), the semiconductor device manufactured inStep 65 is subjected to a performance test, an endurance test, and the like. The semiconductor device is completed through these steps, and then shipped (Step 67). - FIG. 10 is a detailed flowchart of the aforementioned wafer process in
Step 64. - In Step71 (oxidation), the surface of the wafer is oxidized. In Step 72 (CVD), an insulating film is formed on the surface of the wafer by CVD. In Step 73 (electrode formation), electrodes are formed on the wafer by evaporation. In Step 74 (ion implantation), desired ions are implanted into the wafer. In Step 75 (resist process), a chemically amplified resist is applied on the wafer.
- In Step76 (exposure), the circuit pattern of the mask structure is printed on the wafer though exposure by the X-ray exposure apparatus described in the seventh embodiment. The wafer is loaded so that it opposes the mask. The offset between the wafer and the mask is detected by the alignment unit, and the wafer and the mask are positioned by moving the wafer stage. When the wafer and the mask are aligned with each other, exposure is performed. After the completion of exposure, the wafer is stepped to the next shot, and alignment and subsequent operations are repeated.
- In Step77 (development), the wafer exposed in
Step 76 is developed. In Step 78 (etching), parts other than the developed resist are cut away. By repeating these steps, multiple circuit patterns are formed on the wafer. - The manufacturing method of this embodiment can respond to mass production of highly integrated semiconductor devices that have before been difficult to manufacture.
- While the embodiments of the present invention have been described, centered on the manufacture of a semiconductor device using X-ray exposure, it is to be understood that the present invention is not limited to the disclosed embodiments. The present invention may be applied to an exposure method or apparatus that performs exposure with a mask and a resist placed close to each other, and a mask structure used in the method or apparatus. Namely, the present invention is intended to cover an exposure method and an apparatus and a mask structure that use light other than X-rays (e.g., ultraviolet light or far-ultraviolet light from a light source such as an excimer laser) as long as the light has a wavelength in a region that permits titanium oxide to function as a photocatalyst. Or, the present invention is intended to cover an exposure method and apparatus and a mask structure that use energy beams other than X-rays (e.g., light mentioned above, an electron beam, or an ion beam) on a condition that auxiliary light is used.
- As mentioned above, in the mask structure of the present invention, a thin film of titanium oxide is formed on the surface of a mask or on a pellicle mounted on a mask (in forming the titanium oxide thin film on the surface of a mask itself, it is preferable that the film not be formed in the exposure area or on the side of an absorber), so that the titanium oxide serves as a photocatalyst and provides an antistatic function when being made electroconductive. This makes it possible to prevent the surfaces of the pellicle and the mask from being contaminated, to reduce the number of times of cleaning, or to eliminate the need for cleaning altogether, thereby extending the life of the mask.
- Furthermore, an exposure method and apparatus, in which a pattern is transferred onto a material to be patterned by exposure using this mask structure, achieves high-accuracy printing that is suited for mass production. Still further, high-performance semiconductor devices can be mass-produced by transferring a pattern onto a substrate by exposure using the mask structure of the present invention, and processing the substrate.
- Except as otherwise disclosed herein, the various components shown in outline or in block form in the Figures are individually well known and their internal construction and operation are not critical either to the making or using of this invention or to a description of the best mode of the invention.
Claims (47)
1. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate by exposure;
a pellicle positioned to cover at least one of a patterned surface of said mask and a surface of said mask opposite to the patterned surface; and
a titanium oxide film formed on the surface of said pellicle.
2. A mask structure according to , wherein said mask is a reflective-type mask.
claim 1
3. A mask structure according to , wherein said mask is a transmission mask.
claim 1
4. A mask structure according to , wherein said titanium oxide film is formed on a section of the surface of said pellicle other than a section where light is radiated when the substrate is exposed.
claim 1
5. A mask structure according to , wherein said mask structure is used for exposure using X-rays.
claim 1
6. An exposure method comprising the steps of:
providing a mask structure having a mask with a desired pattern, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle; and
transferring the pattern on the mask onto a material to be patterned by exposure.
7. An exposure method according to , further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
claim 6
8. An exposure method according to , further comprising performing the transfer by exposure with X-rays.
claim 6
9. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask, and a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, said exposure apparatus comprising:
mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the surface of the pellicle; and
means for holding the material to be patterned.
10. An exposure apparatus according to , further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
claim 9
11. An exposure apparatus according to , further comprising:
claim 9
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
12. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle.
13. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure having a mask with a desired pattern, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
14. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate by exposure, said mask having an exposure area to be irradiated with an energy beam; and
a titanium oxide film formed on the surface of said mask, said titanium oxide film being formed outside the exposure area.
15. A mask structure according to , wherein the energy beam includes X-rays.
claim 14
16. An exposure method comprising the steps of:
providing a mask structure including a mask having a desired pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area; and
transferring by exposure the pattern on the mask onto a material to be patterned.
17. An exposure method according to , further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
claim 16
18. An exposure method according to , further comprising performing the transfer by exposure with X-rays.
claim 16
19. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask having the pattern and an exposure area to be irradiated with an energy beam, said exposure apparatus comprising:
mask structure holding means for holding the mask structure wherein the mask structure has a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area; and
means for holding the material to be patterned.
20. An exposure apparatus according to , further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
claim 19
21. An exposure apparatus according to , further comprising:
claim 19
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
22. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask having the pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area.
23. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure including a mask having a pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
24. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate by exposure, said mask comprising a film and an absorber pattern formed on said film to be irradiated with an energy beam; and
a titanium oxide film formed on said mask, said titanium oxide film being formed on the surface of said film and on the surface of said absorber pattern, which surface excludes the sides of said absorber pattern.
25. A mask structure according to , wherein the energy beam includes X-rays.
claim 24
26. An exposure method comprising the steps of:
providing a mask structure including a mask with a desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern; and
transferring by exposure the pattern on the mask onto a material to be patterned.
27. An exposure method according to , further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
claim 26
28. An exposure method according to , further comprising performing the transfer by exposure with X-rays.
claim 26
29. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask with the pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, said exposure apparatus comprising:
mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern; and
means for holding the material to be patterned.
30. An exposure apparatus according to , further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
claim 29
31. An exposure apparatus according to , further comprising:
claim 29
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
32. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask with the desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern.
33. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure including a mask with a desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
34. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate, said mask including an exposure area to be irradiated with an energy beam, and an absorber pattern for the energy beam formed on the exposure area; and
a titanium oxide film formed on said mask, said titanium oxide film being formed outside the exposure area and only on the upper surface of said absorber pattern.
35. A mask structure according to , wherein the energy beam includes X-rays.
claim 34
36. An exposure method comprising the steps of:
providing a mask structure including a mask having a pattern, the mask including an exposure area to be irradiated with an energy beam, and an absorber pattern for the energy beam being formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern; and
transferring by exposure the pattern on the mask onto a material to be patterned.
37. An exposure method according to , further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
claim 36
38. An exposure method according to , further comprising performing the transfer by exposure with X-rays.
claim 36
39. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask having a pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern, said exposure apparatus comprising:
mask structure holding means for holding the mask structure; and
means for holding a material to be patterned.
40. An exposure apparatus according to , further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
claim 39
41. An exposure apparatus according to , further comprising:
claim 39
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
42. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, wherein the mask structure includes the mask having the pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern.
43. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure including a mask having a pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
44. An exposure apparatus for transferring by exposure a desired pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask covered with a pellicle, and a titanium oxide film formed thereon, said exposure apparatus comprising:
a first chamber in which the pattern is transferred onto the material to be patterned through exposure by using the mask structure; and
a second chamber including an auxiliary light source for irradiating the titanium oxide film to cause the titanium oxide film to act as a photocatalyst.
45. An exposure apparatus according to , wherein said second chamber is used to store the mask structure.
claim 44
46. An exposure apparatus for transferring by exposure a desired pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask, which is not covered with a pellicle, and a titanium oxide film formed thereon, said exposure apparatus comprising:
a first chamber in which the pattern is transferred onto the material to be patterned through exposure by using the mask structure; and
a second chamber including an auxiliary light source for irradiating the titanium oxide film to cause the titanium oxide film to act as a photocatalyst.
47. An exposure apparatus according to , wherein said second chamber is used to store the mask structure.
claim 46
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP9-268862 | 1997-10-01 | ||
JP26886297A JP4011687B2 (en) | 1997-10-01 | 1997-10-01 | Mask structure, exposure apparatus using the mask structure, and semiconductor device manufacturing method using the mask structure |
JP09-268862 | 1997-10-01 |
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Publication Number | Publication Date |
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US20010038950A1 true US20010038950A1 (en) | 2001-11-08 |
US6337161B2 US6337161B2 (en) | 2002-01-08 |
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US09/161,372 Expired - Lifetime US6337161B2 (en) | 1997-10-01 | 1998-09-28 | Mask structure exposure method |
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JP (1) | JP4011687B2 (en) |
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EP1333323A2 (en) * | 2002-02-01 | 2003-08-06 | Nikon Corporation | Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same |
US20030215723A1 (en) * | 2002-04-19 | 2003-11-20 | Bearinger Jane P. | Methods and apparatus for selective, oxidative patterning of a surface |
US20040119965A1 (en) * | 2002-12-20 | 2004-06-24 | Powers James M. | Apparatus for reducing pellicle darkening |
US20110244395A1 (en) * | 2010-04-06 | 2011-10-06 | Pei-Lin Huang | Apparatus and method for haze control in a semiconductor process |
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Also Published As
Publication number | Publication date |
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US6337161B2 (en) | 2002-01-08 |
JPH11109608A (en) | 1999-04-23 |
JP4011687B2 (en) | 2007-11-21 |
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