EP1855310A3 - Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same - Google Patents
Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same Download PDFInfo
- Publication number
- EP1855310A3 EP1855310A3 EP07114231A EP07114231A EP1855310A3 EP 1855310 A3 EP1855310 A3 EP 1855310A3 EP 07114231 A EP07114231 A EP 07114231A EP 07114231 A EP07114231 A EP 07114231A EP 1855310 A3 EP1855310 A3 EP 1855310A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- capacitor
- electronic device
- semiconductor device
- manufacturing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0010982A KR100455287B1 (en) | 2002-02-28 | 2002-02-28 | Capacitor for semiconductor device, manufacturing method thereof and electronic device employing the capacitor |
EP02257345A EP1341217A3 (en) | 2002-02-28 | 2002-10-23 | Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02257345A Division EP1341217A3 (en) | 2002-02-28 | 2002-10-23 | Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1855310A2 EP1855310A2 (en) | 2007-11-14 |
EP1855310A3 true EP1855310A3 (en) | 2009-07-15 |
Family
ID=27725829
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02257345A Ceased EP1341217A3 (en) | 2002-02-28 | 2002-10-23 | Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
EP07114231A Withdrawn EP1855310A3 (en) | 2002-02-28 | 2002-10-23 | Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02257345A Ceased EP1341217A3 (en) | 2002-02-28 | 2002-10-23 | Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
Country Status (5)
Country | Link |
---|---|
US (3) | US20030160276A1 (en) |
EP (2) | EP1341217A3 (en) |
JP (1) | JP4094970B2 (en) |
KR (1) | KR100455287B1 (en) |
CN (2) | CN1292479C (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100468852B1 (en) | 2002-07-20 | 2005-01-29 | 삼성전자주식회사 | Manufacturing method of Capacitor Structure |
DE10341564B4 (en) * | 2003-09-09 | 2007-11-22 | Infineon Technologies Ag | Capacitor assembly and method of making the same |
KR100634509B1 (en) * | 2004-08-20 | 2006-10-13 | 삼성전자주식회사 | Three dimensional capacitor and method of manufacturing the same |
JP4953580B2 (en) * | 2005-03-03 | 2012-06-13 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US7521705B2 (en) * | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
KR100840783B1 (en) * | 2006-08-21 | 2008-06-23 | 삼성전자주식회사 | Method and apparatus for evaporating a precursor, and method of forming a dielectric layer using the method |
US7892964B2 (en) * | 2007-02-14 | 2011-02-22 | Micron Technology, Inc. | Vapor deposition methods for forming a metal-containing layer on a substrate |
US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
JP6213579B2 (en) * | 2014-02-07 | 2017-10-18 | 株式会社村田製作所 | Capacitor |
KR101893000B1 (en) | 2017-03-09 | 2018-08-29 | 성균관대학교 산학협력단 | Chloride based electron emitting materials and manufacturing method of the same |
US10411017B2 (en) * | 2017-08-31 | 2019-09-10 | Micron Technology, Inc. | Multi-component conductive structures for semiconductor devices |
CN111668023B (en) * | 2020-05-13 | 2021-10-08 | 肇庆市华师大光电产业研究院 | Preparation method and application of hafnium-aluminum-oxygen film |
CN112080732B (en) * | 2020-07-29 | 2021-12-28 | 西安交通大学 | Silicon integrated BT-BMZ film, capacitor and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6018065A (en) * | 1997-11-10 | 2000-01-25 | Advanced Technology Materials, Inc. | Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor |
JP2000349254A (en) * | 1999-06-02 | 2000-12-15 | Sony Corp | Dielectric capacitor and memory, and their manufacture |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6285048B1 (en) * | 1991-12-13 | 2001-09-04 | Symetrix Corporation | Barium strontium titanate integrated circuit capacitors and process for making the same |
US5338951A (en) * | 1991-11-06 | 1994-08-16 | Ramtron International Corporation | Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices |
JP3182889B2 (en) * | 1992-06-25 | 2001-07-03 | セイコーエプソン株式会社 | Ferroelectric device |
US5395522A (en) * | 1993-02-23 | 1995-03-07 | Anatel Corporation | Apparatus for removal of organic material from water |
JPH10182291A (en) * | 1996-12-20 | 1998-07-07 | Sharp Corp | Production of ferroelectric thin film, ferroelectric thin film coated substrate and capacitor |
KR19990080412A (en) * | 1998-04-16 | 1999-11-05 | 윤종용 | High dielectric constant capacitor with double dielectric film and manufacturing method |
US6509601B1 (en) * | 1998-07-31 | 2003-01-21 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor protection layer and method for manufacturing the same |
KR100327328B1 (en) * | 1998-10-13 | 2002-05-09 | 윤종용 | Method for forming dielectric layer of capacitor having partially different thickness in the layer |
US6144069A (en) * | 1999-08-03 | 2000-11-07 | United Microelectronics Corp. | LDMOS transistor |
US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
KR100415516B1 (en) * | 2000-06-28 | 2004-01-31 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor in a semiconductor device |
US6777565B2 (en) * | 2000-06-29 | 2004-08-17 | Board Of Trustees, The University Of Illinois | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives |
KR100663341B1 (en) * | 2000-08-11 | 2007-01-02 | 삼성전자주식회사 | method for manufacturing capacitor using atomic layer deposition and apparatus thereof |
US6642567B1 (en) * | 2000-08-31 | 2003-11-04 | Micron Technology, Inc. | Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices |
US7378719B2 (en) * | 2000-12-20 | 2008-05-27 | Micron Technology, Inc. | Low leakage MIM capacitor |
JP2002222934A (en) * | 2001-01-29 | 2002-08-09 | Nec Corp | Semiconductor device and manufacturing method thereof |
KR100431740B1 (en) * | 2001-09-14 | 2004-05-17 | 주식회사 하이닉스반도체 | Semiconductor with High-k dielectric layer and Method for fabricating the same |
-
2002
- 2002-02-28 KR KR10-2002-0010982A patent/KR100455287B1/en not_active IP Right Cessation
- 2002-10-23 EP EP02257345A patent/EP1341217A3/en not_active Ceased
- 2002-10-23 EP EP07114231A patent/EP1855310A3/en not_active Withdrawn
- 2002-10-24 CN CNB021471622A patent/CN1292479C/en not_active Expired - Fee Related
- 2002-10-24 CN CNA2006101531766A patent/CN101009217A/en active Pending
-
2003
- 2003-02-24 US US10/370,625 patent/US20030160276A1/en not_active Abandoned
- 2003-02-28 JP JP2003053123A patent/JP4094970B2/en not_active Expired - Fee Related
-
2004
- 2004-09-01 US US10/930,953 patent/US7105401B2/en not_active Expired - Fee Related
-
2006
- 2006-09-01 US US11/514,248 patent/US20060289921A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6018065A (en) * | 1997-11-10 | 2000-01-25 | Advanced Technology Materials, Inc. | Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor |
JP2000349254A (en) * | 1999-06-02 | 2000-12-15 | Sony Corp | Dielectric capacitor and memory, and their manufacture |
US6479849B1 (en) * | 1999-06-02 | 2002-11-12 | Sony Corporation | Dielectric capacitor and memory and method of manufacturing the same |
Non-Patent Citations (1)
Title |
---|
WILK G D ET AL: "High-[kappa] gate dielectrics: Current status and materials properties considerations", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 89, no. 10, 15 May 2001 (2001-05-15), pages 5243 - 5275, XP012052062, ISSN: 0021-8979 * |
Also Published As
Publication number | Publication date |
---|---|
US7105401B2 (en) | 2006-09-12 |
JP4094970B2 (en) | 2008-06-04 |
CN101009217A (en) | 2007-08-01 |
JP2004006678A (en) | 2004-01-08 |
US20050042836A1 (en) | 2005-02-24 |
KR20030071328A (en) | 2003-09-03 |
EP1341217A3 (en) | 2004-11-10 |
EP1855310A2 (en) | 2007-11-14 |
EP1341217A2 (en) | 2003-09-03 |
US20030160276A1 (en) | 2003-08-28 |
CN1292479C (en) | 2006-12-27 |
CN1441496A (en) | 2003-09-10 |
US20060289921A1 (en) | 2006-12-28 |
KR100455287B1 (en) | 2004-11-06 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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AC | Divisional application: reference to earlier application |
Ref document number: 1341217 Country of ref document: EP Kind code of ref document: P |
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AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB |
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RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: LEE, JUNG-HYUN,C/O SAMSUNG ADVANCES INST. OF TECHN Inventor name: CHO, YOUNG-JIN Inventor name: MIN, YO-SEP |
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