EP1807556A4 - METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES - Google Patents
METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATESInfo
- Publication number
- EP1807556A4 EP1807556A4 EP05746524A EP05746524A EP1807556A4 EP 1807556 A4 EP1807556 A4 EP 1807556A4 EP 05746524 A EP05746524 A EP 05746524A EP 05746524 A EP05746524 A EP 05746524A EP 1807556 A4 EP1807556 A4 EP 1807556A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- growing
- substrates
- devices
- semiconductor materials
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61012004P | 2004-09-14 | 2004-09-14 | |
PCT/US2004/043854 WO2006031240A1 (en) | 2004-09-14 | 2004-12-31 | Hydride compounds with silicon and germanium core atoms and method of synthesizing same |
US66077905P | 2005-03-11 | 2005-03-11 | |
PCT/US2005/012157 WO2006031257A2 (en) | 2004-09-14 | 2005-04-08 | METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1807556A2 EP1807556A2 (en) | 2007-07-18 |
EP1807556A4 true EP1807556A4 (en) | 2011-03-02 |
Family
ID=36060457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05746524A Withdrawn EP1807556A4 (en) | 2004-09-14 | 2005-04-08 | METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1807556A4 (en) |
KR (1) | KR101060372B1 (en) |
WO (1) | WO2006031257A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006099171A2 (en) | 2005-03-11 | 2006-09-21 | The Arizona Boar Of Regents, A Body Corporate Acting On Behalf Of Arizona State University | NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES |
JP5265376B2 (en) | 2005-11-23 | 2013-08-14 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | Novel silicon germanium hydride, its production and use |
CN101365648B (en) * | 2005-11-23 | 2012-09-26 | 亚利桑那董事会,代表亚利桑那州立大学行事的法人团体 | Silicon-germanium hydrides and methods for making and using same |
JP5265377B2 (en) * | 2005-11-23 | 2013-08-14 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | Novel silicon germanium hydride, its production and use |
CN101678665B (en) * | 2007-04-02 | 2013-07-10 | 代表亚利桑那州立大学行事的亚利桑那董事会 | Novel methods for making and using halosilylgermanes |
US7915104B1 (en) | 2007-06-04 | 2011-03-29 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates |
WO2009112510A1 (en) | 2008-03-11 | 2009-09-17 | Nxp B.V. | Quantum-dot device and position-controlled quantum-dot-fabrication method |
US20110045646A1 (en) * | 2008-04-02 | 2011-02-24 | Arizona Board Of Regents | Selective deposition of sige layers from single source of si-ge hydrides |
KR102326316B1 (en) | 2015-04-10 | 2021-11-16 | 삼성전자주식회사 | Semiconductor dievices and methods of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4777023A (en) * | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7594967B2 (en) * | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
-
2005
- 2005-04-08 EP EP05746524A patent/EP1807556A4/en not_active Withdrawn
- 2005-04-08 WO PCT/US2005/012157 patent/WO2006031257A2/en active Application Filing
- 2005-04-08 KR KR1020077008535A patent/KR101060372B1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4777023A (en) * | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
Non-Patent Citations (5)
Title |
---|
BAUER MATTHEW ET AL: "Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1-x buffer layers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 83, no. 11, 15 September 2003 (2003-09-15), pages 2163 - 2165, XP012035089, ISSN: 0003-6951 * |
CHANGWU HU ET AL: "Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of h3SiGeH3 and Ge(SiH3)4", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, vol. 15, no. 19, 23 September 2003 (2003-09-23), pages 3569 - 3572, XP001521469, ISSN: 0897-4756, DOI: 10.1021/CM034477W * |
GAIDUK P I ET AL: "Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 367, no. 1-2, 1 May 2000 (2000-05-01), pages 120 - 125, XP004203895, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(00)00660-X * |
HAYNES T E ET AL: "Composition dependence of solid-phase epitaxy in silicon-germanium alloys: experiment and theory", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 51, no. 12, 15 March 1995 (1995-03-15), pages 7762 - 7771, XP009129828, ISSN: 0163-1829 * |
WOLF S ED - WOLF S ET AL: "CHAPTER 6: Chemical Vapor Deposition of Amorphous and Polycrystalline thin Films", 1 January 1986, SILICON PROCESSING FOR THE VLSI ERA. VOLUME 1: PROCESS TECHNOLOGY, LATTICE PRESS, SUNSET BEACH, CALIFORNIA, USA, PAGE(S) 161 - 197, ISBN: 978-0-9616721-3-3, XP009134833 * |
Also Published As
Publication number | Publication date |
---|---|
WO2006031257A3 (en) | 2006-09-08 |
EP1807556A2 (en) | 2007-07-18 |
KR101060372B1 (en) | 2011-08-29 |
WO2006031257A2 (en) | 2006-03-23 |
KR20070083681A (en) | 2007-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2427071B (en) | Semiconductor device having SiC substrate and method for manufacturing the same | |
EP1790759A4 (en) | NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL | |
EP1736572A4 (en) | Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device | |
EP1710696B8 (en) | Semiconductor device and method for activating the same | |
TWI371782B (en) | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same | |
TWI316268B (en) | Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device | |
EP1821378A4 (en) | Semiconductor laser device and method for manufacturing same | |
TWI346995B (en) | Semiconductor device and method for producing the same | |
EP1754811A4 (en) | Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device | |
SG119329A1 (en) | Semiconductor device and method for manufacturing the same | |
TWI348582B (en) | Substrate for display device, manufacturing method for same and display device | |
TWI366283B (en) | Nitride semiconductor light-emitting device and method for fabrication thereof | |
EP1807556A4 (en) | METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES | |
EP1620894A4 (en) | Substrate, manufacturing method therefor, and semiconductor device | |
EP1801863A4 (en) | Silicon epitaxial wafer and method for manufacturing the same | |
EP1921674A4 (en) | Semiconductor device and method for manufacturing same | |
GB2416908B (en) | Array substrate for lcd and fabrication method thereof | |
EP1887624A4 (en) | Semiconductor device and method for manufacturing same | |
EP1710833A4 (en) | Semiconductor manufacturing apparatus and semiconductor manufacturing method using same | |
EP1817796A4 (en) | Semiconductor device and manufacturing method thereof | |
TWI368320B (en) | Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device | |
SG126899A1 (en) | Light-emitting device, method for making the same,and nitride semiconductor substrate | |
EP1970946A4 (en) | AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME | |
EP1737029A4 (en) | Substrate for device bonding and method for manufacturing same | |
TWI372439B (en) | Semiconductor wafer positioning method, and apparatus using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20070411 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR |
|
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR |
|
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ARIZONA BOARD OF REGENTS, ACTING FOR AND ON BEHALF |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20110131 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/20 20060101AFI20110125BHEP Ipc: H01L 29/161 20060101ALI20110125BHEP Ipc: H01L 29/20 20060101ALN20110125BHEP Ipc: H01L 29/22 20060101ALN20110125BHEP |
|
17Q | First examination report despatched |
Effective date: 20110711 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20160812 |