EP1284027A1 - Photovoltaische zelle - Google Patents
Photovoltaische zelleInfo
- Publication number
- EP1284027A1 EP1284027A1 EP01925188A EP01925188A EP1284027A1 EP 1284027 A1 EP1284027 A1 EP 1284027A1 EP 01925188 A EP01925188 A EP 01925188A EP 01925188 A EP01925188 A EP 01925188A EP 1284027 A1 EP1284027 A1 EP 1284027A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- photovoltaic cell
- photoactive layer
- electrode
- transition layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000007704 transition Effects 0.000 claims abstract description 31
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920000547 conjugated polymer Polymers 0.000 claims abstract description 7
- 229910003472 fullerene Inorganic materials 0.000 claims abstract description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- 229910001508 alkali metal halide Inorganic materials 0.000 claims description 2
- 150000008045 alkali metal halides Chemical class 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- 239000000370 acceptor Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000009499 grossing Methods 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- -1 polyphenylenes Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Definitions
- the invention relates to a photovoltaic cell with a photoactive layer of two molecular components, namely an electron donor and an electron acceptor, in particular a conjugated polymer component and a fullerene component, and with two metallic electrodes provided on both sides of the photoactive layer.
- conjugated plastics Plastics with extensive ⁇ -electron systems, in which single and double bonds alternate, are referred to as conjugated plastics. These conjugated plastics have comparable energy bands in terms of electron energy to semiconductors, so that they can also be converted from the non-conductive to the metallic conductive state by doping. Examples of such conjugated plastics are polyphenylenes, polyvinylphenylenes (PPV), polythiophenes or polyanilines.
- PV polyvinylphenylenes
- polythiophenes polyanilines.
- the efficiency of the energy conversion of photovoltaic polymer cells from a conjugated polymer is typically between 10 "3 and 10 " 2 %. To improve this efficiency, heterogeneous layers of two conjugated polymer components have already been proposed (US Pat. No.
- the invention is therefore based on the object to design a photovoltaic cell of the type described so that a further increase in the efficiency of energy conversion is possible.
- the invention solves this problem in that an electrically insulating transition layer with a thickness of at most 5 nm is provided at least between an electrode and the photoactive layer.
- the invention is based on the fact that in the transition region between the photoactive layer and the electrode there is a considerable resistance to charge carrier transfer, which is probably due to reactions between the metallic electrode and the organic photoactive layer. If these direct influences can therefore be prevented, an improvement in charge transfer must be expected under otherwise constant conditions, which leads to an increase in efficiency.
- electrically insulating transition layer By providing an electrically insulating transition layer, these immediate reactions between the photoactive layer and the electrode can now be largely eliminated, but the thickness of the electrically insulating transition layer must be limited to a maximum of 5 nm, so that the high electrical resistance of this transition layer does not facilitate the transfer of the charge carriers between Photoactive layer and electrode prevented.
- the barrier that otherwise occurs between the electrode and the photoactive layer can surprisingly be largely removed without additionally complicating the charge carrier transfer.
- this electrically insulating transition layer the efficiency of photovoltaic cells could be increased by up to 20 to 25% compared to cells of the same structure without this transition layer.
- an optimization of the electrically insulating transition layer is necessary. Such optimization can be done by reducing the thickness of the transition layer to at most 2 nm.
- the desired effect can also be influenced by the chemical layer structure.
- transition layers made of a salt in particular of an alkali halide, have proven successful, and particularly good properties have also been found with regard to processing with a transition layer made of a lithium fluoride, which is evaporated in vacuo onto the photoactive layer or the electrode in the desired layer thickness can be.
- Fig. 1 shows a photovoltaic cell according to the invention in a schematic section
- Fig. 2 shows the current-voltage characteristic of a conventional and a photovoltaic cell according to the invention.
- the photovoltaic cell according to FIG. 1 consists of a translucent glass substrate 1, on which an electrode layer 2 made of an indium / tin oxide (ITO) is applied.
- This electrode layer 2 generally has a comparatively rough surface structure, so that it is covered with a smoothing layer 3 made of a polymer which is electrically conductive by doping, usually PEDOT.
- the photoactive layer 4 comprising two components is applied to this smoothing layer 3 with a layer thickness of, for example, 100 nm to a few ⁇ m, depending on the application method.
- the photoactive layer 4 consists of a conjugated polymer, preferably a PPV derivative, as an electron donor and a fullerene, in particular functionalized fullerene PCBM, as an electron acceptor.
- polymer here means both high polymers and oligomers.
- the two components are mixed with a solvent and as a solution on the smoothing layer 3 z. B. applied by spin coating or dripping. Squeegee or printing processes can also be used to coat larger areas with such a photoactive layer 4.
- a fining agent such as chlorobenzene is preferably used as the solvent in order to ensure a fine structure of the heterogeneous layer 4 then has an average grain size smaller than 500 nm.
- the number of contact points between the electron donor and the electron acceptor can thus be increased considerably, which results in improved charge separation and an increase in efficiency to approximately 2.6% under simulated AM 1.5 conditions.
- a thin transition layer 6 is applied to the photoactive layer 4 with a layer thickness of, for example, 0.6 nm, which must have an electrically insulating effect.
- This transition layer in the exemplary embodiment of an alkali metal halide, namely a lithium fluoride, which is vapor-deposited in a vacuum of 2 x 10 "6 torr at a rate of 0.2 nm / min, wherein, however, due to the low layer thickness no continuous closed cover of the photoactive Layer 4 can be expected.
- the electron-collecting electrode When using ITO as a hole-collecting electrode, aluminum is used as the electron-collecting electrode, which is vapor-deposited onto the electrically insulating transition layer 6. Since the interposition of an electrically insulating transition layer 6 between the photoactive layer 4 and the electrode 5 largely prevents the reactions which interfere with the charge transfer between the photoactive layer 4 and the electrode 5 in the immediate border area between the electrode 5 and the active photo layer 4, Because the electrode 5 does not directly adjoin the photoactive layer 4 in large areas, the charge carrier transfer from the photoactive layer 4 to the electrode 5 is improved, provided that the transition layer 6 does not itself form an additional barrier between the photoactive layer 4 and the Electrode 5 builds up, which can be ensured by limiting the layer thickness of the transition layer 6.
- the electrical insulating properties of the transition layer 6 obviously prevent the effects that inhibit the transfer of charge carriers from becoming effective, particularly in the transition region from the photoactive layer 4 to the transition layer 6.
- the current density I is plotted against the voltage U at an excitation energy of 80 mW / cm 2 under simulated AM 1.5 conditions of two photovoltaic cells, which differ only in the presence of a transition layer 6 according to the invention .
- the invention is of course not limited to the illustrated embodiment, which shows the electrically insulating transition layer 6 between the electron-collecting electrode 5 and the photoactive layer 4.
- the electrically insulating transition layer 6 could also be provided between the hole-collecting electrode 2 and the organic layer adjoining it, in the exemplary embodiment the smoothing layer 3.
- the electrically insulating transition layer 6 could only be provided in the area of the electrode 2. Since the effect of the electrically insulating transition layer 6 is not limited to conjugated polymers as electron donors and fullerenes as electron acceptors, the effect according to the invention can also be observed in all photovoltaic cells with a molecular two-component layer composed of an electron donor and an electron acceptor.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT7342000 | 2000-04-27 | ||
AT0073400A AT411306B (de) | 2000-04-27 | 2000-04-27 | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
PCT/AT2001/000129 WO2001084645A1 (de) | 2000-04-27 | 2001-04-27 | Photovoltaische zelle |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1284027A1 true EP1284027A1 (de) | 2003-02-19 |
Family
ID=3680147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01925188A Ceased EP1284027A1 (de) | 2000-04-27 | 2001-04-27 | Photovoltaische zelle |
Country Status (7)
Country | Link |
---|---|
US (1) | US6933436B2 (de) |
EP (1) | EP1284027A1 (de) |
JP (2) | JP5517386B2 (de) |
CN (1) | CN1426607A (de) |
AT (1) | AT411306B (de) |
AU (1) | AU2001252014A1 (de) |
WO (1) | WO2001084645A1 (de) |
Families Citing this family (71)
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AT411306B (de) | 2000-04-27 | 2003-11-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
AT410729B (de) * | 2000-04-27 | 2003-07-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
AT410859B (de) * | 2000-04-27 | 2003-08-25 | Qsel Quantum Solar Energy Linz | Verfahren zum herstellen einer photovoltaischen zelle mit einer photoaktiven schicht aus zwei organischen komponenten |
DE10140991C2 (de) * | 2001-08-21 | 2003-08-21 | Osram Opto Semiconductors Gmbh | Organische Leuchtdiode mit Energieversorgung, Herstellungsverfahren dazu und Anwendungen |
DE60132450T2 (de) * | 2001-09-04 | 2008-04-17 | Sony Deutschland Gmbh | Solarzelle und Herstellungsmethode |
EP1447860A1 (de) * | 2003-02-17 | 2004-08-18 | Rijksuniversiteit Groningen | Photodiode aus organischem Material |
DE10326546A1 (de) * | 2003-06-12 | 2005-01-05 | Siemens Ag | Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften |
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- 2001-04-27 WO PCT/AT2001/000129 patent/WO2001084645A1/de active Application Filing
- 2001-04-27 EP EP01925188A patent/EP1284027A1/de not_active Ceased
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Also Published As
Publication number | Publication date |
---|---|
US6933436B2 (en) | 2005-08-23 |
AT411306B (de) | 2003-11-25 |
AU2001252014A1 (en) | 2001-11-12 |
US20040094196A1 (en) | 2004-05-20 |
CN1426607A (zh) | 2003-06-25 |
WO2001084645A1 (de) | 2001-11-08 |
JP5517386B2 (ja) | 2014-06-11 |
JP2003533034A (ja) | 2003-11-05 |
JP2013157633A (ja) | 2013-08-15 |
ATA7342000A (de) | 2003-04-15 |
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