EP0958595A4 - A new non-thermal process for annealing crystalline materials - Google Patents

A new non-thermal process for annealing crystalline materials

Info

Publication number: EP0958595A4
Authority: EP; European Patent Office
Prior art keywords: thermal process; crystalline materials; new non; annealing; annealing crystalline
Prior art date: 1996-06-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

EP97932303A

Other languages

German (de)

French (fr)

Other versions

EP0958595A1 (en

Inventor

Charles Keith Manka

Jacob Grun

Billy Charles Covington

David William Donnelly

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

US Department of Navy

Original Assignee

US Department of Navy

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-06-26

Filing date

1997-06-26

Publication date

2000-01-05

1997-06-26 Application filed by US Department of Navy filed Critical US Department of Navy

1999-11-24 Publication of EP0958595A1 publication Critical patent/EP0958595A1/en

2000-01-05 Publication of EP0958595A4 publication Critical patent/EP0958595A4/en

Status Ceased legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

EP97932303A 1996-06-26 1997-06-26 A new non-thermal process for annealing crystalline materials Ceased EP0958595A4 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US670909		1996-06-26
US08/670,909 US6001715A (en)	1996-06-26	1996-06-26	Non-thermal process for annealing crystalline materials
PCT/US1997/011113 WO1997050114A1 (en)	1996-06-26	1997-06-26	A new non-thermal process for annealing crystalline materials

Publications (2)

Publication Number	Publication Date
EP0958595A1 EP0958595A1 (en)	1999-11-24
EP0958595A4 true EP0958595A4 (en)	2000-01-05

Family

ID=24692388

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP97932303A Ceased EP0958595A4 (en)	1996-06-26	1997-06-26	A new non-thermal process for annealing crystalline materials

Country Status (5)

Country	Link
US (1)	US6001715A (en)
EP (1)	EP0958595A4 (en)
AU (1)	AU3579597A (en)
CA (1)	CA2271125C (en)
WO (1)	WO1997050114A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6372520B1 (en) *	1998-07-10	2002-04-16	Lsi Logic Corporation	Sonic assisted strengthening of gate oxides
US7194801B2 (en)	2000-03-24	2007-03-27	Cymbet Corporation	Thin-film battery having ultra-thin electrolyte and associated method
US7135423B2 (en)	2002-05-09	2006-11-14	Varian Semiconductor Equipment Associates, Inc	Methods for forming low resistivity, ultrashallow junctions with low damage
US7211351B2 (en) *	2003-10-16	2007-05-01	Cymbet Corporation	Lithium/air batteries with LiPON as separator and protective barrier and method
US7176112B2 (en) *	2004-09-21	2007-02-13	Atmel Corporation	Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
KR101387855B1 (en)	2005-07-15	2014-04-22	사임베트 코퍼레이션	Thin-film batteries with soft and hard electrolyte layers and method
US7776478B2 (en)	2005-07-15	2010-08-17	Cymbet Corporation	Thin-film batteries with polymer and LiPON electrolyte layers and method
US20110056531A1 (en) *	2009-09-08	2011-03-10	Gm Global Technology Operations, Inc.	Method for enhancing the performance of thermoelectric materials by irradiation-processing
US11527774B2 (en)	2011-06-29	2022-12-13	Space Charge, LLC	Electrochemical energy storage devices
US10601074B2 (en)	2011-06-29	2020-03-24	Space Charge, LLC	Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US9853325B2 (en)	2011-06-29	2017-12-26	Space Charge, LLC	Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US8662442B2 (en) *	2011-11-01	2014-03-04	Textron Innovations Inc.	Active prop rotor stability system
US9142465B1 (en) *	2013-03-13	2015-09-22	Sandia Corporation	Precise annealing of focal plane arrays for optical detection
EP3762989A4 (en)	2018-03-07	2021-12-15	Space Charge, LLC	Thin-film solid-state energy-storage devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4154625A (en) *	1977-11-16	1979-05-15	Bell Telephone Laboratories, Incorporated	Annealing of uncapped compound semiconductor materials by pulsed energy deposition
DE3714357C2 (en) *	1986-04-30	1994-02-03	Toshiba Ceramics Co	Silicon wafer and method of manufacturing the same, and silicon wafer selector
US5286313A (en) *	1991-10-31	1994-02-15	Surface Combustion, Inc.	Process control system using polarizing interferometer

1996
- 1996-06-26 US US08/670,909 patent/US6001715A/en not_active Expired - Lifetime
1997
- 1997-06-26 AU AU35795/97A patent/AU3579597A/en not_active Abandoned
- 1997-06-26 WO PCT/US1997/011113 patent/WO1997050114A1/en active Application Filing
- 1997-06-26 CA CA002271125A patent/CA2271125C/en not_active Expired - Fee Related
- 1997-06-26 EP EP97932303A patent/EP0958595A4/en not_active Ceased

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GRUN J ET AL: "Athermal annealing of silicon", PHYSICAL REVIEW LETTERS, 24 FEB. 1997, APS, USA, vol. 78, no. 8, pages 1584 - 1587, XP000852810, ISSN: 0031-9007 *
See also references of WO9750114A1 *

Also Published As

Publication number	Publication date
EP0958595A1 (en)	1999-11-24
WO1997050114A1 (en)	1997-12-31
AU3579597A (en)	1998-01-14
CA2271125C (en)	2003-05-27
US6001715A (en)	1999-12-14
CA2271125A1 (en)	1997-12-31

Legal Events

Date	Code	Title	Description
1999-10-08	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1999-11-24	17P	Request for examination filed	Effective date: 19990421
1999-11-24	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): DE FI FR GB IT NL SE
2000-01-05	A4	Supplementary search report drawn up and despatched	Effective date: 19991122
2000-01-05	AK	Designated contracting states	Kind code of ref document: A4 Designated state(s): DE FI FR GB IT NL SE
2000-01-05	RIC1	Information provided on ipc code assigned before grant	Free format text: 7H 01L 21/268 A, 7C 30B 31/20 B, 7H 01L 21/30 B
2004-04-28	17Q	First examination report despatched	Effective date: 20040312
2006-08-30	17Q	First examination report despatched	Effective date: 20040312
2009-06-05	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED
2009-07-08	18R	Application refused	Effective date: 20090301
2010-02-05	REG	Reference to a national code	Ref country code: HK Ref legal event code: WD Ref document number: 1026088 Country of ref document: HK

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