EP0757598A4 - Pulsed ion beam assisted deposition - Google Patents
Pulsed ion beam assisted depositionInfo
- Publication number
- EP0757598A4 EP0757598A4 EP96906197A EP96906197A EP0757598A4 EP 0757598 A4 EP0757598 A4 EP 0757598A4 EP 96906197 A EP96906197 A EP 96906197A EP 96906197 A EP96906197 A EP 96906197A EP 0757598 A4 EP0757598 A4 EP 0757598A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- ion beam
- assisted deposition
- beam assisted
- pulsed ion
- pulsed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3142—Ion plating
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37670295A | 1995-01-23 | 1995-01-23 | |
US376702 | 1995-01-23 | ||
PCT/US1996/001000 WO1996022841A1 (en) | 1995-01-23 | 1996-01-23 | Pulsed ion beam assisted deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0757598A1 EP0757598A1 (en) | 1997-02-12 |
EP0757598A4 true EP0757598A4 (en) | 2001-03-14 |
Family
ID=23486107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96906197A Withdrawn EP0757598A4 (en) | 1995-01-23 | 1996-01-23 | Pulsed ion beam assisted deposition |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0757598A4 (en) |
JP (1) | JPH09511028A (en) |
AU (1) | AU4965896A (en) |
CA (1) | CA2186102A1 (en) |
IL (1) | IL116876A0 (en) |
WO (1) | WO1996022841A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AUPR179500A0 (en) | 2000-11-30 | 2000-12-21 | Saintech Pty Limited | Ion source |
FR2832736B1 (en) | 2001-11-28 | 2004-12-10 | Eppra | IMPROVED METHOD FOR COATING A SUPPORT WITH A MATERIAL |
CN100341121C (en) * | 2003-09-10 | 2007-10-03 | 台湾积体电路制造股份有限公司 | Modifying method for dielectric layer, modified dielectric layer and uses in mosaic metal process |
FR2865946B1 (en) * | 2004-02-09 | 2007-12-21 | Commissariat Energie Atomique | METHOD FOR PRODUCING A LAYER OF MATERIAL ON A SUPPORT |
US7703479B2 (en) | 2005-10-17 | 2010-04-27 | The University Of Kentucky Research Foundation | Plasma actuator |
JP6470061B2 (en) * | 2015-02-03 | 2019-02-13 | スタンレー電気株式会社 | Manufacturing method of p-type ZnO-based semiconductor structure and manufacturing method of ZnO-based semiconductor element |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4490229A (en) * | 1984-07-09 | 1984-12-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamondlike carbon films |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
US4844785A (en) * | 1984-03-27 | 1989-07-04 | Matsushita Electric Industrial Co., Ltd. | Method for deposition of hard carbon film |
US5055318A (en) * | 1988-10-11 | 1991-10-08 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
US5316969A (en) * | 1992-12-21 | 1994-05-31 | Board Of Trustees Of The Leland Stanford Junior University | Method of shallow junction formation in semiconductor devices using gas immersion laser doping |
US5332625A (en) * | 1991-03-07 | 1994-07-26 | Minnesota Mining And Manufacturing Company | Polymer with crosslinked surface zones |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2155024A (en) * | 1984-03-03 | 1985-09-18 | Standard Telephones Cables Ltd | Surface treatment of plastics materials |
EP0165685B1 (en) * | 1984-06-20 | 1992-09-23 | Gould Inc. | Laser-based system for the total repair of photomasks |
-
1996
- 1996-01-23 AU AU49658/96A patent/AU4965896A/en not_active Abandoned
- 1996-01-23 JP JP8523004A patent/JPH09511028A/en active Pending
- 1996-01-23 WO PCT/US1996/001000 patent/WO1996022841A1/en not_active Application Discontinuation
- 1996-01-23 IL IL11687696A patent/IL116876A0/en unknown
- 1996-01-23 CA CA002186102A patent/CA2186102A1/en not_active Abandoned
- 1996-01-23 EP EP96906197A patent/EP0757598A4/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4844785A (en) * | 1984-03-27 | 1989-07-04 | Matsushita Electric Industrial Co., Ltd. | Method for deposition of hard carbon film |
US4490229A (en) * | 1984-07-09 | 1984-12-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamondlike carbon films |
US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
US5055318A (en) * | 1988-10-11 | 1991-10-08 | Beamalloy Corporation | Dual ion beam ballistic alloying process |
US5332625A (en) * | 1991-03-07 | 1994-07-26 | Minnesota Mining And Manufacturing Company | Polymer with crosslinked surface zones |
US5316969A (en) * | 1992-12-21 | 1994-05-31 | Board Of Trustees Of The Leland Stanford Junior University | Method of shallow junction formation in semiconductor devices using gas immersion laser doping |
Non-Patent Citations (2)
Title |
---|
L.J. CHEN - L.S. HUNG - J.W. MAYER: "Pulsed ion beam annealing of nickel thin films on silicon", METASTABLE MATERIAL FORMATION BY ION IMPLANTATION, November 1981 (1981-11-01), pages 319 - 326, XP000979616 * |
See also references of WO9622841A1 * |
Also Published As
Publication number | Publication date |
---|---|
AU4965896A (en) | 1996-08-14 |
WO1996022841A1 (en) | 1996-08-01 |
JPH09511028A (en) | 1997-11-04 |
CA2186102A1 (en) | 1996-08-01 |
EP0757598A1 (en) | 1997-02-12 |
IL116876A0 (en) | 1996-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): BE CH DE DK FR GB IT LI NL |
|
17P | Request for examination filed |
Effective date: 19970124 |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20010126 |
|
AK | Designated contracting states |
Kind code of ref document: A4 Designated state(s): BE CH DE DK FR GB IT LI NL |
|
RIC1 | Information provided on ipc code assigned before grant |
Free format text: 7B 05C 11/00 A, 7B 05B 1/32 B, 7B 05B 3/02 B, 7B 05B 3/06 B, 7C 08F 2/46 B, 7C 23C 8/00 B, 7C 23C 14/00 B, 7C 23C 16/00 B, 7H 05H 1/00 B, 7H 05H 1/24 B, 7B 05D 3/14 B |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20020801 |