EP0757598A4 - Pulsed ion beam assisted deposition - Google Patents

Pulsed ion beam assisted deposition

Info

Publication number
EP0757598A4
EP0757598A4 EP96906197A EP96906197A EP0757598A4 EP 0757598 A4 EP0757598 A4 EP 0757598A4 EP 96906197 A EP96906197 A EP 96906197A EP 96906197 A EP96906197 A EP 96906197A EP 0757598 A4 EP0757598 A4 EP 0757598A4
Authority
EP
European Patent Office
Prior art keywords
ion beam
assisted deposition
beam assisted
pulsed ion
pulsed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96906197A
Other languages
German (de)
French (fr)
Other versions
EP0757598A1 (en
Inventor
Regan W Stinnett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Technology and Engineering Solutions of Sandia LLC
Original Assignee
Sandia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandia Corp filed Critical Sandia Corp
Publication of EP0757598A1 publication Critical patent/EP0757598A1/en
Publication of EP0757598A4 publication Critical patent/EP0757598A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/08Ion sources; Ion guns using arc discharge
    • H01J27/14Other arc discharge ion sources using an applied magnetic field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3142Ion plating
EP96906197A 1995-01-23 1996-01-23 Pulsed ion beam assisted deposition Withdrawn EP0757598A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37670295A 1995-01-23 1995-01-23
US376702 1995-01-23
PCT/US1996/001000 WO1996022841A1 (en) 1995-01-23 1996-01-23 Pulsed ion beam assisted deposition

Publications (2)

Publication Number Publication Date
EP0757598A1 EP0757598A1 (en) 1997-02-12
EP0757598A4 true EP0757598A4 (en) 2001-03-14

Family

ID=23486107

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96906197A Withdrawn EP0757598A4 (en) 1995-01-23 1996-01-23 Pulsed ion beam assisted deposition

Country Status (6)

Country Link
EP (1) EP0757598A4 (en)
JP (1) JPH09511028A (en)
AU (1) AU4965896A (en)
CA (1) CA2186102A1 (en)
IL (1) IL116876A0 (en)
WO (1) WO1996022841A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
FR2832736B1 (en) 2001-11-28 2004-12-10 Eppra IMPROVED METHOD FOR COATING A SUPPORT WITH A MATERIAL
CN100341121C (en) * 2003-09-10 2007-10-03 台湾积体电路制造股份有限公司 Modifying method for dielectric layer, modified dielectric layer and uses in mosaic metal process
FR2865946B1 (en) * 2004-02-09 2007-12-21 Commissariat Energie Atomique METHOD FOR PRODUCING A LAYER OF MATERIAL ON A SUPPORT
US7703479B2 (en) 2005-10-17 2010-04-27 The University Of Kentucky Research Foundation Plasma actuator
JP6470061B2 (en) * 2015-02-03 2019-02-13 スタンレー電気株式会社 Manufacturing method of p-type ZnO-based semiconductor structure and manufacturing method of ZnO-based semiconductor element

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490229A (en) * 1984-07-09 1984-12-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamondlike carbon films
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
US4844785A (en) * 1984-03-27 1989-07-04 Matsushita Electric Industrial Co., Ltd. Method for deposition of hard carbon film
US5055318A (en) * 1988-10-11 1991-10-08 Beamalloy Corporation Dual ion beam ballistic alloying process
US5316969A (en) * 1992-12-21 1994-05-31 Board Of Trustees Of The Leland Stanford Junior University Method of shallow junction formation in semiconductor devices using gas immersion laser doping
US5332625A (en) * 1991-03-07 1994-07-26 Minnesota Mining And Manufacturing Company Polymer with crosslinked surface zones

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155024A (en) * 1984-03-03 1985-09-18 Standard Telephones Cables Ltd Surface treatment of plastics materials
EP0165685B1 (en) * 1984-06-20 1992-09-23 Gould Inc. Laser-based system for the total repair of photomasks

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4844785A (en) * 1984-03-27 1989-07-04 Matsushita Electric Industrial Co., Ltd. Method for deposition of hard carbon film
US4490229A (en) * 1984-07-09 1984-12-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamondlike carbon films
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
US5055318A (en) * 1988-10-11 1991-10-08 Beamalloy Corporation Dual ion beam ballistic alloying process
US5332625A (en) * 1991-03-07 1994-07-26 Minnesota Mining And Manufacturing Company Polymer with crosslinked surface zones
US5316969A (en) * 1992-12-21 1994-05-31 Board Of Trustees Of The Leland Stanford Junior University Method of shallow junction formation in semiconductor devices using gas immersion laser doping

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
L.J. CHEN - L.S. HUNG - J.W. MAYER: "Pulsed ion beam annealing of nickel thin films on silicon", METASTABLE MATERIAL FORMATION BY ION IMPLANTATION, November 1981 (1981-11-01), pages 319 - 326, XP000979616 *
See also references of WO9622841A1 *

Also Published As

Publication number Publication date
AU4965896A (en) 1996-08-14
WO1996022841A1 (en) 1996-08-01
JPH09511028A (en) 1997-11-04
CA2186102A1 (en) 1996-08-01
EP0757598A1 (en) 1997-02-12
IL116876A0 (en) 1996-07-23

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