DE69935095D1 - Halbleiterbauelement und deren Herstellungsverfahren - Google Patents

Halbleiterbauelement und deren Herstellungsverfahren

Info

Publication number
DE69935095D1
DE69935095D1 DE69935095T DE69935095T DE69935095D1 DE 69935095 D1 DE69935095 D1 DE 69935095D1 DE 69935095 T DE69935095 T DE 69935095T DE 69935095 T DE69935095 T DE 69935095T DE 69935095 D1 DE69935095 D1 DE 69935095D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69935095T
Other languages
English (en)
Other versions
DE69935095T2 (de
Inventor
Hisashi Ohtani
Misako Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE69935095D1 publication Critical patent/DE69935095D1/de
Publication of DE69935095T2 publication Critical patent/DE69935095T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
DE69935095T 1998-08-06 1999-07-21 Halbleiterbauelement und deren Herstellungsverfahren Expired - Lifetime DE69935095T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP23496198 1998-08-06
JP23496198 1998-08-06
JP25409798 1998-09-08
JP25409798 1998-09-08
JP16046099 1999-06-08
JP16046099 1999-06-08

Publications (2)

Publication Number Publication Date
DE69935095D1 true DE69935095D1 (de) 2007-03-29
DE69935095T2 DE69935095T2 (de) 2007-05-31

Family

ID=27321694

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935095T Expired - Lifetime DE69935095T2 (de) 1998-08-06 1999-07-21 Halbleiterbauelement und deren Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6313481B1 (de)
EP (1) EP0978877B1 (de)
KR (1) KR100702342B1 (de)
DE (1) DE69935095T2 (de)

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EP2284605A3 (de) 1999-02-23 2017-10-18 Semiconductor Energy Laboratory Co, Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
US6614083B1 (en) 1999-03-17 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Wiring material and a semiconductor device having wiring using the material, and the manufacturing method
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EP1058310A3 (de) * 1999-06-02 2009-11-18 Sel Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und deren Herstellungsverfahren
TW459275B (en) * 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
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TW540251B (en) * 1999-09-24 2003-07-01 Semiconductor Energy Lab EL display device and method for driving the same
JP2001318627A (ja) 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
US6916693B2 (en) 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP3591513B2 (ja) * 2000-04-21 2004-11-24 セイコーエプソン株式会社 電気光学装置およびプロジェクタ
US6825820B2 (en) 2000-08-10 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR100807581B1 (ko) * 2001-06-21 2008-02-28 엘지.필립스 엘시디 주식회사 액정 표시장치의 구조 및 그 제조방법
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US7352133B2 (en) * 2002-08-05 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
TWI354975B (en) * 2002-09-05 2011-12-21 Semiconductor Energy Lab Light emitting device and driving method thereof
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TWI226712B (en) * 2003-12-05 2005-01-11 Au Optronics Corp Pixel structure and fabricating method thereof
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
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US20060091397A1 (en) * 2004-11-04 2006-05-04 Kengo Akimoto Display device and method for manufacturing the same
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JP4341570B2 (ja) * 2005-03-25 2009-10-07 セイコーエプソン株式会社 電気光学装置及び電子機器
CN100437318C (zh) * 2005-11-24 2008-11-26 统宝光电股份有限公司 像素结构及其修补方法
JP2007212499A (ja) * 2006-02-07 2007-08-23 Seiko Epson Corp 液晶装置及びプロジェクタ
TWI351764B (en) * 2007-04-03 2011-11-01 Au Optronics Corp Pixel structure and method for forming the same
TWI337754B (en) 2007-04-20 2011-02-21 Au Optronics Corp Semiconductor structure of display device and method for fabricating the same
JP5095353B2 (ja) 2007-11-14 2012-12-12 株式会社ジャパンディスプレイイースト 液晶表示装置及びその製造方法
KR101515382B1 (ko) 2008-08-26 2015-04-27 삼성디스플레이 주식회사 박막 트랜지스터 표시판
JP5589359B2 (ja) 2009-01-05 2014-09-17 セイコーエプソン株式会社 電気光学装置及び電子機器
TWI373853B (en) * 2009-03-16 2012-10-01 Au Optronics Corp Active device array substrate and method for fabricating thereof
JP5352333B2 (ja) * 2009-04-23 2013-11-27 株式会社ジャパンディスプレイ アクティブマトリクス型表示装置
WO2012011217A1 (ja) * 2010-07-21 2012-01-26 シャープ株式会社 アクティブマトリクス基板及びその製造方法、並びに液晶表示パネル
JP5594084B2 (ja) * 2010-11-19 2014-09-24 セイコーエプソン株式会社 電気光学装置及び電子機器
CN104508548B (zh) 2012-07-20 2017-11-07 株式会社半导体能源研究所 显示装置
JP2014206670A (ja) * 2013-04-15 2014-10-30 パナソニック液晶ディスプレイ株式会社 表示装置及び表示装置の製造方法
KR102122538B1 (ko) * 2013-12-30 2020-06-12 엘지디스플레이 주식회사 액정표시장치
US9530801B2 (en) * 2014-01-13 2016-12-27 Apple Inc. Display circuitry with improved transmittance and reduced coupling capacitance
CN103855087B (zh) 2014-02-24 2016-04-27 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
US10147745B2 (en) 2015-04-01 2018-12-04 Shanghai Tianma Micro-electronics Co., Ltd. Array substrate, display panel and display device
CN104730782B (zh) 2015-04-01 2018-03-27 上海天马微电子有限公司 一种阵列基板、显示面板和显示装置
JP6457879B2 (ja) * 2015-04-22 2019-01-23 株式会社ジャパンディスプレイ 表示装置及びその製造方法
US10459300B2 (en) * 2017-05-18 2019-10-29 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd Array substrate and a method for fabricating the same, a liquid crystal display panel

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Also Published As

Publication number Publication date
KR100702342B1 (ko) 2007-04-04
EP0978877A3 (de) 2001-11-07
US20020013019A1 (en) 2002-01-31
US6576504B2 (en) 2003-06-10
EP0978877B1 (de) 2007-02-14
EP0978877A2 (de) 2000-02-09
DE69935095T2 (de) 2007-05-31
US6313481B1 (en) 2001-11-06
KR20000017071A (ko) 2000-03-25

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