DE69932139D1 - Inhaltsadressierbarer Speicher mit schwebendem Gatter - Google Patents
Inhaltsadressierbarer Speicher mit schwebendem GatterInfo
- Publication number
- DE69932139D1 DE69932139D1 DE69932139T DE69932139T DE69932139D1 DE 69932139 D1 DE69932139 D1 DE 69932139D1 DE 69932139 T DE69932139 T DE 69932139T DE 69932139 T DE69932139 T DE 69932139T DE 69932139 D1 DE69932139 D1 DE 69932139D1
- Authority
- DE
- Germany
- Prior art keywords
- addressable
- content
- floating gate
- gate memory
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/219,546 US6005790A (en) | 1998-12-22 | 1998-12-22 | Floating gate content addressable memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69932139D1 true DE69932139D1 (de) | 2006-08-10 |
Family
ID=22819700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69932139T Expired - Lifetime DE69932139D1 (de) | 1998-12-22 | 1999-12-13 | Inhaltsadressierbarer Speicher mit schwebendem Gatter |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6005790A (de) |
| EP (1) | EP1014382B1 (de) |
| JP (1) | JP2000187991A (de) |
| DE (1) | DE69932139D1 (de) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100250807B1 (ko) * | 1998-02-26 | 2000-05-01 | 윤덕용 | 캠 셀 구조 및 캠 셀을 이용한 필드 컨피규어러블 램과 프로그래머블 로직어레이 겸용 메모리 |
| KR100368317B1 (ko) | 1999-12-28 | 2003-01-24 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 코드저장 셀 |
| DE10103060B4 (de) * | 2000-01-26 | 2006-06-08 | Infineon Technologies Ag | Verfahren zum Testen einer ein Floating-Gate aufweisenden Speicherzelle und Anordnung zur Durchführung dieses Verfahrens |
| CA2299991A1 (en) * | 2000-03-03 | 2001-09-03 | Mosaid Technologies Incorporated | A memory cell for embedded memories |
| US6639818B1 (en) * | 2000-03-16 | 2003-10-28 | Silicon Storage Technology, Inc. | Differential non-volatile content addressable memory cell and array |
| US6307767B1 (en) * | 2001-04-09 | 2001-10-23 | Integrated Device Technology, Inc. | Low power priority encoder |
| US6512685B1 (en) * | 2002-06-06 | 2003-01-28 | Integrated Device Technology, Inc. | CAM circuit with separate memory and logic operating voltages |
| US7154140B2 (en) | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
| US6996009B2 (en) * | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
| US6804136B2 (en) | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
| US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US6888739B2 (en) | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
| US7221017B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
| US7847344B2 (en) | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
| US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
| ITRM20020465A1 (it) * | 2002-09-20 | 2004-03-21 | St Microelectronics Srl | Memoria cam non volatile di tipo nor. |
| ITRM20020493A1 (it) * | 2002-10-02 | 2004-04-03 | St Microelectronics Srl | Memoria cam non volatile di tipo and. |
| US7196921B2 (en) * | 2004-07-19 | 2007-03-27 | Silicon Storage Technology, Inc. | High-speed and low-power differential non-volatile content addressable memory cell and array |
| JP4944763B2 (ja) * | 2005-01-27 | 2012-06-06 | スパンション エルエルシー | 半導体装置、アドレス割り付け方法及びベリファイ方法 |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| US7567448B2 (en) | 2007-01-05 | 2009-07-28 | Atmel Corporation | Content addressable memory cell having a single floating gate transistor |
| CN103714853B (zh) * | 2013-12-24 | 2016-06-15 | 中国科学院上海高等研究院 | Nand型内容可寻址存储器 |
| JP6834335B2 (ja) * | 2016-10-17 | 2021-02-24 | Tdk株式会社 | 不揮発性連想メモリ |
| JP7042065B2 (ja) * | 2017-11-28 | 2022-03-25 | アロン化成株式会社 | 排水配管構造及び排水配管方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396799A (ja) * | 1986-10-13 | 1988-04-27 | Nec Corp | 連想メモリ |
| JPS63266697A (ja) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | 内容呼び出しメモリ |
| US4791606A (en) * | 1987-09-01 | 1988-12-13 | Triad Semiconductors International Bv | High density CMOS dynamic CAM cell |
| GB2230882B (en) * | 1988-02-23 | 1992-04-22 | Mitsubishi Electric Corp | Content addressable memory device |
| JPH01307095A (ja) * | 1988-06-01 | 1989-12-12 | Mitsubishi Electric Corp | 不揮発性ｃａｍ |
| JP2728819B2 (ja) * | 1991-12-18 | 1998-03-18 | 川崎製鉄株式会社 | 半導体集積回路 |
| JP2798197B2 (ja) * | 1992-03-06 | 1998-09-17 | シャープ株式会社 | 不揮発性連想メモリ |
| JP2695102B2 (ja) * | 1992-09-30 | 1997-12-24 | 川崎製鉄株式会社 | 内容アドレス式メモリ |
| US5576985A (en) * | 1996-03-25 | 1996-11-19 | Holtz; Klaus | Integrated content addressable read only memory |
-
1998
- 1998-12-22 US US09/219,546 patent/US6005790A/en not_active Expired - Fee Related
-
1999
- 1999-12-13 EP EP99310029A patent/EP1014382B1/de not_active Expired - Lifetime
- 1999-12-13 DE DE69932139T patent/DE69932139D1/de not_active Expired - Lifetime
- 1999-12-15 JP JP35643599A patent/JP2000187991A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1014382B1 (de) | 2006-06-28 |
| JP2000187991A (ja) | 2000-07-04 |
| EP1014382A1 (de) | 2000-06-28 |
| US6005790A (en) | 1999-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de |