DE69841589D1 - Mehrschichtiger widerstand für emittierende vorrichtung - Google Patents

Mehrschichtiger widerstand für emittierende vorrichtung

Info

Publication number
DE69841589D1
DE69841589D1 DE69841589T DE69841589T DE69841589D1 DE 69841589 D1 DE69841589 D1 DE 69841589D1 DE 69841589 T DE69841589 T DE 69841589T DE 69841589 T DE69841589 T DE 69841589T DE 69841589 D1 DE69841589 D1 DE 69841589D1
Authority
DE
Germany
Prior art keywords
emitting device
multilayer resistance
multilayer
resistance
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841589T
Other languages
English (en)
Inventor
Johan N Knall
Duane A Haven
Swayambu Ramani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69841589D1 publication Critical patent/DE69841589D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
DE69841589T 1997-06-30 1998-06-19 Mehrschichtiger widerstand für emittierende vorrichtung Expired - Lifetime DE69841589D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/884,702 US6013986A (en) 1997-06-30 1997-06-30 Electron-emitting device having multi-layer resistor
PCT/US1998/012461 WO1999000817A1 (en) 1997-06-30 1998-06-19 Multi-layer resistor for an emitting device

Publications (1)

Publication Number Publication Date
DE69841589D1 true DE69841589D1 (de) 2010-05-12

Family

ID=25385184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841589T Expired - Lifetime DE69841589D1 (de) 1997-06-30 1998-06-19 Mehrschichtiger widerstand für emittierende vorrichtung

Country Status (6)

Country Link
US (1) US6013986A (de)
EP (1) EP0993679B1 (de)
JP (1) JP3583444B2 (de)
KR (1) KR100401298B1 (de)
DE (1) DE69841589D1 (de)
WO (1) WO1999000817A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0935276B1 (de) * 1997-08-14 2004-10-13 Matsushita Electric Industrial Co., Ltd. Gasentladungstafel und lichterzeugende gasvorrichtung
JP3595718B2 (ja) 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
US6586310B1 (en) * 1999-08-27 2003-07-01 Agere Systems Inc. High resistivity film for 4T SRAM
US6647614B1 (en) * 2000-10-20 2003-11-18 International Business Machines Corporation Method for changing an electrical resistance of a resistor
US6828559B2 (en) * 2002-11-14 2004-12-07 Delphi Technologies, Inc Sensor having a plurality of active areas
KR100549951B1 (ko) * 2004-01-09 2006-02-07 삼성전자주식회사 반도체 메모리에서의 식각정지막을 이용한 커패시터형성방법
US8274205B2 (en) * 2006-12-05 2012-09-25 General Electric Company System and method for limiting arc effects in field emitter arrays
WO2013136299A1 (en) 2012-03-16 2013-09-19 Nanox Imaging Limited Devices having an electron emitting structure
KR102025970B1 (ko) * 2012-08-16 2019-09-26 나녹스 이미징 피엘씨 영상 캡처 장치
CN105793952B (zh) 2013-11-27 2018-12-11 纳欧克斯影像有限公司 以耐离子轰击配置的电子发射结构

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132397A (en) * 1976-04-30 1977-11-07 Nippon Chemical Ind Thinnfilm resistor whose resistive temperature coefficient has been improved
JPS52135095A (en) * 1976-05-06 1977-11-11 Nippon Chemical Ind Thinnfilm resistor whose resistive temperature coeficent has been made small
US4104607A (en) * 1977-03-14 1978-08-01 The United States Of America As Represented By The Secretary Of The Navy Zero temperature coefficient of resistance bi-film resistor
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5096662A (en) * 1989-04-17 1992-03-17 Mazda Motor Corporation Method for forming high abrasion resisting layers on parent materials
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
JP2626276B2 (ja) * 1991-02-06 1997-07-02 双葉電子工業株式会社 電子放出素子
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
JP2699827B2 (ja) * 1993-09-27 1998-01-19 双葉電子工業株式会社 電界放出カソード素子
FR2725072A1 (fr) * 1994-09-28 1996-03-29 Pixel Int Sa Protection electrique d'une anode d'ecran plat de visualisation
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
DE69530978T2 (de) 1995-08-01 2004-04-22 Stmicroelectronics S.R.L., Agrate Brianza Begrenzung und Selbstvergleichmässigung von durch Mikrospitzen einer flachen Feldemissionsbildwiedergabevorrichtung fliessenden Kathodenströmen
US5828288A (en) 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US6031250A (en) * 1995-12-20 2000-02-29 Advanced Technology Materials, Inc. Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
JPH09219144A (ja) * 1996-02-08 1997-08-19 Futaba Corp 電界放出カソードとその製造方法

Also Published As

Publication number Publication date
US6013986A (en) 2000-01-11
JP2000515679A (ja) 2000-11-21
JP3583444B2 (ja) 2004-11-04
EP0993679A4 (de) 2000-08-30
KR100401298B1 (ko) 2003-10-11
EP0993679A1 (de) 2000-04-19
EP0993679B1 (de) 2010-03-31
WO1999000817A1 (en) 1999-01-07
KR20010020546A (ko) 2001-03-15

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