DE69637304D1 - Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung - Google Patents
Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V NitridverbindungInfo
- Publication number
- DE69637304D1 DE69637304D1 DE69637304T DE69637304T DE69637304D1 DE 69637304 D1 DE69637304 D1 DE 69637304D1 DE 69637304 T DE69637304 T DE 69637304T DE 69637304 T DE69637304 T DE 69637304T DE 69637304 D1 DE69637304 D1 DE 69637304D1
- Authority
- DE
- Germany
- Prior art keywords
- iii
- emitting device
- semiconductor light
- device consisting
- nitride compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1995086083A JP3475564B6 (ja) | 1995-03-17 | 窒化ガリウム系化合物半導体発光素子 | |
| JP8608495 | 1995-03-17 | ||
| JP08608495A JP3500762B2 (ja) | 1995-03-17 | 1995-03-17 | 窒化ガリウム系化合物半導体発光素子 |
| JP8608395 | 1995-03-17 | ||
| JP20918295A JP3557742B2 (ja) | 1995-07-24 | 1995-07-24 | ３族窒化物半導体発光素子 |
| JP20918295 | 1995-07-24 | ||
| JP20918395A JPH0936423A (ja) | 1995-07-24 | 1995-07-24 | ３族窒化物半導体発光素子 |
| JP20918395 | 1995-07-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69637304D1 true DE69637304D1 (de) | 2007-12-13 |
| DE69637304T2 DE69637304T2 (de) | 2008-08-07 |
Family
ID=27467214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69637304T Expired - Fee Related DE69637304T2 (de) | 1995-03-17 | 1996-03-14 | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US5945689A (de) |
| EP (1) | EP0732754B1 (de) |
| DE (1) | DE69637304T2 (de) |
| TW (1) | TW385555B (de) |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0732754B1 (de) | 1995-03-17 | 2007-10-31 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
| JP3304787B2 (ja) | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
| US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| JP4119501B2 (ja) * | 1997-07-10 | 2008-07-16 | ローム株式会社 | 半導体発光素子 |
| JP3822318B2 (ja) * | 1997-07-17 | 2006-09-20 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| GB2331307A (en) * | 1997-11-15 | 1999-05-19 | Sharp Kk | Growth of buffer layer by molecular beam epitaxy |
| US6423984B1 (en) * | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
| US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| WO2000052796A1 (fr) | 1999-03-04 | 2000-09-08 | Nichia Corporation | Element de laser semiconducteur au nitrure |
| JP3719047B2 (ja) | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP2001160627A (ja) | 1999-11-30 | 2001-06-12 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
| JP2001168385A (ja) | 1999-12-06 | 2001-06-22 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子 |
| JP3726252B2 (ja) * | 2000-02-23 | 2005-12-14 | 独立行政法人理化学研究所 | 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法 |
| TW440967B (en) * | 2000-03-10 | 2001-06-16 | Advanced Epitaxy Technology In | Activation method to reduce resistivity of p-type thin film |
| US7304325B2 (en) * | 2000-05-01 | 2007-12-04 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device |
| JP3624794B2 (ja) | 2000-05-24 | 2005-03-02 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| JP2002057158A (ja) * | 2000-08-09 | 2002-02-22 | Sony Corp | 絶縁性窒化物層及びその形成方法、半導体装置及びその製造方法 |
| DE10040448A1 (de) * | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zu dessen Herstellung |
| JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| ATE448589T1 (de) * | 2001-04-12 | 2009-11-15 | Nichia Corp | Halbleiterelement aus galliumnitridzusammensetzung |
| JP2002314205A (ja) * | 2001-04-19 | 2002-10-25 | Sharp Corp | 窒化物半導体発光素子ならびにそれを用いた光学装置および発光装置 |
| US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
| TW493287B (en) * | 2001-05-30 | 2002-07-01 | Epistar Corp | Light emitting diode structure with non-conductive substrate |
| JP3763754B2 (ja) * | 2001-06-07 | 2006-04-05 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| JP3791765B2 (ja) * | 2001-06-08 | 2006-06-28 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| DE10135189A1 (de) | 2001-07-19 | 2003-02-20 | Osram Opto Semiconductors Gmbh | Lichtemittierende Vorrichtung auf Basis eines Galliumnitrid-basierten Verbindungshalbleiters und Verfahren zu deren Herstellung |
| DE60225322T2 (de) * | 2001-11-05 | 2009-02-26 | Nichia Corp., Anan | Halbleiterelement |
| JP2003218396A (ja) * | 2001-11-15 | 2003-07-31 | Mitsubishi Cable Ind Ltd | 紫外線発光素子 |
| JP2003209324A (ja) * | 2002-01-17 | 2003-07-25 | Mitsubishi Electric Corp | 半導体光素子及びその製造方法 |
| JP2003243700A (ja) * | 2002-02-12 | 2003-08-29 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US6815241B2 (en) * | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| TWI313069B (en) * | 2002-11-08 | 2009-08-01 | Epistar Corporatio | Light emitting diode and method of making the same |
| US6887727B2 (en) * | 2003-01-28 | 2005-05-03 | Agilent Technologies, Inc. | System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element |
| US7358539B2 (en) * | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
| JP4371202B2 (ja) * | 2003-06-27 | 2009-11-25 | 日立電線株式会社 | 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス |
| JP4292925B2 (ja) * | 2003-09-16 | 2009-07-08 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| TWI223460B (en) | 2003-09-23 | 2004-11-01 | United Epitaxy Co Ltd | Light emitting diodes in series connection and method of making the same |
| TWI309894B (en) * | 2003-10-14 | 2009-05-11 | Showa Denko Kk | Group-iii nitride semiconductor luminescent doide |
| US6989555B2 (en) * | 2004-04-21 | 2006-01-24 | Lumileds Lighting U.S., Llc | Strain-controlled III-nitride light emitting device |
| TW200711171A (en) * | 2005-04-05 | 2007-03-16 | Toshiba Kk | Gallium nitride based semiconductor device and method of manufacturing same |
| US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
| KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스 |
| US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
| WO2008031280A1 (en) * | 2006-09-13 | 2008-03-20 | Helio Optoelectronics Corporation | Light emitting diode structure |
| WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
| JP4980701B2 (ja) * | 2006-12-01 | 2012-07-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| US7951693B2 (en) * | 2006-12-22 | 2011-05-31 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting devices grown on templates to reduce strain |
| US7547908B2 (en) * | 2006-12-22 | 2009-06-16 | Philips Lumilieds Lighting Co, Llc | III-nitride light emitting devices grown on templates to reduce strain |
| US7534638B2 (en) * | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
| US20080149946A1 (en) * | 2006-12-22 | 2008-06-26 | Philips Lumileds Lighting Company, Llc | Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light |
| TWI355096B (en) * | 2006-12-29 | 2011-12-21 | Epistar Corp | Light-emitting diode structure and method for manu |
| WO2009021206A1 (en) * | 2007-08-08 | 2009-02-12 | The Regents Of The University Of California | Nonpolar iii-nitride light emitting diodes with long wavelength emission |
| JP2009099893A (ja) * | 2007-10-19 | 2009-05-07 | Showa Denko Kk | Ｉｉｉ族窒化物半導体発光素子 |
| EP2240968A1 (de) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System und verfahren zur bildung einer emitterschicht |
| DE102008032318A1 (de) * | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| US7907277B2 (en) * | 2008-05-14 | 2011-03-15 | Baker Hughes Incorporated | Method and apparatus for downhole spectroscopy |
| US20090283746A1 (en) * | 2008-05-15 | 2009-11-19 | Palo Alto Research Center Incorporated | Light-emitting devices with modulation doped active layers |
| WO2010005865A1 (en) * | 2008-07-07 | 2010-01-14 | Smithkline Beecham Corporation | Methods, apparatus and systems employing multiple energy sources for analyzing compositions |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8451877B1 (en) * | 2010-03-23 | 2013-05-28 | Sandia Corporation | High efficiency III-nitride light-emitting diodes |
| JP5319628B2 (ja) * | 2010-08-26 | 2013-10-16 | シャープ株式会社 | 窒化物半導体素子および半導体光学装置 |
| US9620670B2 (en) * | 2010-09-02 | 2017-04-11 | Micron Technology, Inc. | Solid state lighting dies with quantum emitters and associated methods of manufacturing |
| US20120248577A1 (en) * | 2011-04-04 | 2012-10-04 | Epowersoft Inc. | Controlled Doping in III-V Materials |
| KR20130011374A (ko) * | 2011-07-21 | 2013-01-30 | 주식회사 칩테크놀러지 | 자외선 발광 다이오드용 다중 양자 우물 및 그의 제조 방법 |
| US8648384B2 (en) * | 2011-07-25 | 2014-02-11 | Lg Innotek Co., Ltd. | Light emitting device |
| US8946788B2 (en) | 2011-08-04 | 2015-02-03 | Avogy, Inc. | Method and system for doping control in gallium nitride based devices |
| DE202014003441U1 (de) | 2013-08-14 | 2014-11-18 | Joimax Gmbh | Zwischenwirbel-Körbchen |
| WO2015176002A1 (en) * | 2014-05-15 | 2015-11-19 | The Regents Of The University Of California | Doping in iii-nitride devices |
| CN104078544A (zh) * | 2014-07-22 | 2014-10-01 | 深圳市兆明芯科技控股有限公司 | 免打线封装的led芯片及封装工艺 |
| CN105957927B (zh) * | 2016-05-31 | 2018-04-24 | 华灿光电(苏州）有限公司 | 一种发光二极管外延片的生长方法 |
| CN107546303B (zh) * | 2017-08-25 | 2019-06-21 | 扬州乾照光电有限公司 | 一种AlGaInP基发光二极管及其制造方法 |
| JP2022172792A (ja) * | 2021-05-07 | 2022-11-17 | 日機装株式会社 | 窒化物半導体発光素子 |
| US20230369537A1 (en) * | 2022-05-13 | 2023-11-16 | Meta Platforms Technologies, Llc | Micro-led active region co-doping for surface losses suppression |
| TW202401850A (zh) * | 2022-05-13 | 2024-01-01 | 美商元平台技術有限公司 | 用於抑制表面損失的微發光二極體作用區域共同摻雜 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1279394C (en) * | 1985-07-26 | 1991-01-22 | Naoki Chinone | Multiple quantum well type semiconductor laser |
| US5031012A (en) * | 1989-04-21 | 1991-07-09 | At&T Bell Laboratories | Devices having asymmetric delta-doping |
| US5173751A (en) * | 1991-01-21 | 1992-12-22 | Pioneer Electronic Corporation | Semiconductor light emitting device |
| US5258990A (en) * | 1991-11-07 | 1993-11-02 | The United States Of America As Represented By The Secretary Of The United States Department Of Energy | Visible light surface emitting semiconductor laser |
| US5372408A (en) * | 1992-03-06 | 1994-12-13 | Honda Giken Kogyo Kabushiki Kaisha | Motorcycle brake system having dual master cylinder proportioning |
| US5508529A (en) * | 1992-06-09 | 1996-04-16 | University Of Cincinnati | Multi-quantum well injection mode device and associated electronic neuron apparatus |
| JP2560963B2 (ja) * | 1993-03-05 | 1996-12-04 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
| JP2932467B2 (ja) * | 1993-03-12 | 1999-08-09 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
| JPH0832112A (ja) * | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | ３族窒化物半導体発光素子 |
| JP3121617B2 (ja) * | 1994-07-21 | 2001-01-09 | 松下電器産業株式会社 | 半導体発光素子およびその製造方法 |
| US5650641A (en) * | 1994-09-01 | 1997-07-22 | Toyoda Gosei Co., Ltd. | Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device |
| US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| US5740192A (en) * | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
| EP0732754B1 (de) * | 1995-03-17 | 2007-10-31 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
| US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
-
1996
- 1996-03-14 EP EP96104051A patent/EP0732754B1/de not_active Expired - Lifetime
- 1996-03-14 DE DE69637304T patent/DE69637304T2/de not_active Expired - Fee Related
- 1996-03-18 US US08/616,884 patent/US5945689A/en not_active Expired - Fee Related
- 1996-08-21 TW TW085110285A patent/TW385555B/zh not_active IP Right Cessation
-
1999
- 1999-07-02 US US09/346,935 patent/US6288416B1/en not_active Expired - Fee Related
-
2001
- 2001-07-23 US US09/909,895 patent/US6645785B2/en not_active Expired - Fee Related
-
2003
- 2003-07-14 US US10/617,792 patent/US20040018657A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP0732754B1 (de) | 2007-10-31 |
| EP0732754A3 (de) | 1998-11-04 |
| US6645785B2 (en) | 2003-11-11 |
| US20040018657A1 (en) | 2004-01-29 |
| EP0732754A2 (de) | 1996-09-18 |
| TW385555B (en) | 2000-03-21 |
| US5945689A (en) | 1999-08-31 |
| US20010045564A1 (en) | 2001-11-29 |
| US6288416B1 (en) | 2001-09-11 |
| DE69637304T2 (de) | 2008-08-07 |
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| DE59609374D1 (de) | Optoelektronisches halbleiter-bauelement | |
| SG48494A1 (en) | Group iii-v compound semiconductor and light-emitting device | |
| DE69838566D1 (de) | III-V-Verbindungshalbleiter-Scheibe |
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