DE69607509D1 - Verfahren und Vorrichtung zum Strukturieren einer Metallschicht in einem RF-Plasma mit Modulierung der Substratsspannungsamplitude - Google Patents
Verfahren und Vorrichtung zum Strukturieren einer Metallschicht in einem RF-Plasma mit Modulierung der SubstratsspannungsamplitudeInfo
- Publication number
- DE69607509D1 DE69607509D1 DE69607509T DE69607509T DE69607509D1 DE 69607509 D1 DE69607509 D1 DE 69607509D1 DE 69607509 T DE69607509 T DE 69607509T DE 69607509 T DE69607509 T DE 69607509T DE 69607509 D1 DE69607509 D1 DE 69607509D1
- Authority
- DE
- Germany
- Prior art keywords
- metal layer
- etch
- metal
- substrate
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/409,388 US5614060A (en) | 1995-03-23 | 1995-03-23 | Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69607509D1 true DE69607509D1 (de) | 2000-05-11 |
DE69607509T2 DE69607509T2 (de) | 2000-08-10 |
Family
ID=23620272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69607509T Expired - Fee Related DE69607509T2 (de) | 1995-03-23 | 1996-01-24 | Verfahren und Vorrichtung zum Strukturieren einer Metallschicht in einem RF-Plasma mit Modulierung der Substratsspannungsamplitude |
Country Status (6)
Country | Link |
---|---|
US (1) | US5614060A (de) |
EP (1) | EP0734046B1 (de) |
JP (1) | JPH08339989A (de) |
KR (1) | KR100403115B1 (de) |
AT (1) | ATE191584T1 (de) |
DE (1) | DE69607509T2 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6902683B1 (en) * | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
JP3220394B2 (ja) * | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6214162B1 (en) | 1996-09-27 | 2001-04-10 | Tokyo Electron Limited | Plasma processing apparatus |
US5779807A (en) * | 1996-10-29 | 1998-07-14 | Applied Materials, Inc. | Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers |
TWI231293B (en) | 1997-11-12 | 2005-04-21 | Jsr Corp | Transfer film |
US6379576B2 (en) | 1997-11-17 | 2002-04-30 | Mattson Technology, Inc. | Systems and methods for variable mode plasma enhanced processing of semiconductor wafers |
US6093332A (en) * | 1998-02-04 | 2000-07-25 | Lam Research Corporation | Methods for reducing mask erosion during plasma etching |
KR100521120B1 (ko) * | 1998-02-13 | 2005-10-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자의 표면처리방법 및 장치 |
KR100528685B1 (ko) * | 1998-03-12 | 2005-11-15 | 가부시끼가이샤 히다치 세이사꾸쇼 | 시료의 표면 가공방법 |
US6218196B1 (en) | 1998-05-06 | 2001-04-17 | Mitsubishi Denki Kabushiki Kaisha | Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device |
US6492277B1 (en) * | 1999-09-10 | 2002-12-10 | Hitachi, Ltd. | Specimen surface processing method and apparatus |
US6017826A (en) * | 1998-10-05 | 2000-01-25 | Chartered Semiconductor Manufacturing, Ltd. | Chlorine containing plasma etch method with enhanced sidewall passivation and attenuated microloading effect |
JP4351755B2 (ja) * | 1999-03-12 | 2009-10-28 | キヤノンアネルバ株式会社 | 薄膜作成方法および薄膜作成装置 |
JP3533105B2 (ja) * | 1999-04-07 | 2004-05-31 | Necエレクトロニクス株式会社 | 半導体装置の製造方法と製造装置 |
KR100327346B1 (ko) | 1999-07-20 | 2002-03-06 | 윤종용 | 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법 |
US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
JP2001168086A (ja) | 1999-12-09 | 2001-06-22 | Kawasaki Steel Corp | 半導体装置の製造方法および製造装置 |
FR2811316B1 (fr) * | 2000-07-06 | 2003-01-10 | Saint Gobain | Substrat texture transparent et procedes pour l'obtenir |
US6544895B1 (en) * | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
US6485572B1 (en) * | 2000-08-28 | 2002-11-26 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
US6782337B2 (en) * | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
US6673637B2 (en) * | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
WO2002025708A2 (en) * | 2000-09-20 | 2002-03-28 | Kla-Tencor-Inc. | Methods and systems for semiconductor fabrication processes |
US7349090B2 (en) * | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
US20040253823A1 (en) * | 2001-09-17 | 2004-12-16 | Taiwan Semiconductor Manufacturing Co. | Dielectric plasma etch with deep uv resist and power modulation |
EP1444727A4 (de) * | 2001-10-22 | 2007-07-18 | Unaxis Usa Inc | Prozess und vorrichtung zum ätzen dünner, beschädigungsempfindlicher schichten unter verwendung von hochfrequenzgepulstew plasma |
US20030153195A1 (en) * | 2002-02-13 | 2003-08-14 | Applied Materials, Inc. | Method and apparatus for providing modulated bias power to a plasma etch reactor |
US6700090B2 (en) | 2002-04-26 | 2004-03-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
US6759339B1 (en) | 2002-12-13 | 2004-07-06 | Silicon Magnetic Systems | Method for plasma etching a microelectronic topography using a pulse bias power |
US6942813B2 (en) * | 2003-03-05 | 2005-09-13 | Applied Materials, Inc. | Method of etching magnetic and ferroelectric materials using a pulsed bias source |
US7976673B2 (en) * | 2003-05-06 | 2011-07-12 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
US7521000B2 (en) * | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
JP4931799B2 (ja) * | 2004-03-22 | 2012-05-16 | ケーエルエー−テンカー コーポレイション | 基板の特徴を測定する、または分析のために基板を準備する方法およびシステム |
US7879510B2 (en) * | 2005-01-08 | 2011-02-01 | Applied Materials, Inc. | Method for quartz photomask plasma etching |
US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
US7829243B2 (en) * | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
US7790334B2 (en) * | 2005-01-27 | 2010-09-07 | Applied Materials, Inc. | Method for photomask plasma etching using a protected mask |
US7148073B1 (en) | 2005-03-15 | 2006-12-12 | Kla-Tencor Technologies Corp. | Methods and systems for preparing a copper containing substrate for analysis |
US7394067B1 (en) | 2005-07-20 | 2008-07-01 | Kla-Tencor Technologies Corp. | Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems |
KR101170597B1 (ko) * | 2006-05-10 | 2012-08-02 | 주성엔지니어링(주) | 진폭변조 알에프 전력을 이용한 갭필 방법 및 이를 위한갭필 장치 |
US7786019B2 (en) * | 2006-12-18 | 2010-08-31 | Applied Materials, Inc. | Multi-step photomask etching with chlorine for uniformity control |
KR20100022146A (ko) * | 2008-08-19 | 2010-03-02 | 삼성전자주식회사 | 플라즈마 공정장치 및 그 방법 |
JP2010118549A (ja) | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
US8758638B2 (en) * | 2011-05-10 | 2014-06-24 | Applied Materials, Inc. | Copper oxide removal techniques |
US9401263B2 (en) * | 2013-09-19 | 2016-07-26 | Globalfoundries Inc. | Feature etching using varying supply of power pulses |
CN105765703B (zh) | 2013-12-23 | 2021-02-23 | 英特尔公司 | 在多个鳍状物间距结构当中的笔直、高和一致的鳍状物的蚀刻技术 |
WO2018081144A1 (en) | 2016-10-24 | 2018-05-03 | Kla-Tencor Corporation | Process module(s) integrated into a metrology and/or inspection tool |
JP6846387B2 (ja) * | 2018-06-22 | 2021-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US11043387B2 (en) * | 2019-10-30 | 2021-06-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
JP7405347B2 (ja) | 2021-05-18 | 2023-12-26 | 地方独立行政法人大阪産業技術研究所 | 尖度応答スペクトルを用いた振動制御装置 |
US20230017383A1 (en) * | 2021-07-14 | 2023-01-19 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US4500563A (en) * | 1982-12-15 | 1985-02-19 | Pacific Western Systems, Inc. | Independently variably controlled pulsed R.F. plasma chemical vapor processing |
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
DE3480573D1 (en) * | 1984-01-06 | 1989-12-28 | Tegal Corp | Single electrode, multiple frequency plasma apparatus |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
JPH02109328A (ja) * | 1988-10-18 | 1990-04-23 | Nec Corp | ドライエッチング方法およびそ装置 |
DE69017744T2 (de) * | 1989-04-27 | 1995-09-14 | Fujitsu Ltd | Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas. |
US5332441A (en) * | 1991-10-31 | 1994-07-26 | International Business Machines Corporation | Apparatus for gettering of particles during plasma processing |
JP2988122B2 (ja) * | 1992-05-14 | 1999-12-06 | 日本電気株式会社 | ドライエッチング装置および半導体装置の製造方法 |
JP2941572B2 (ja) * | 1992-08-11 | 1999-08-25 | 三菱電機株式会社 | プラズマエッチング装置及び半導体装置の製造方法 |
US5261965A (en) * | 1992-08-28 | 1993-11-16 | Texas Instruments Incorporated | Semiconductor wafer cleaning using condensed-phase processing |
US5352324A (en) * | 1992-11-05 | 1994-10-04 | Hitachi, Ltd. | Etching method and etching apparatus therefor |
-
1995
- 1995-03-23 US US08/409,388 patent/US5614060A/en not_active Expired - Lifetime
-
1996
- 1996-01-24 EP EP96300487A patent/EP0734046B1/de not_active Expired - Lifetime
- 1996-01-24 DE DE69607509T patent/DE69607509T2/de not_active Expired - Fee Related
- 1996-01-24 AT AT96300487T patent/ATE191584T1/de not_active IP Right Cessation
- 1996-03-23 KR KR1019960008493A patent/KR100403115B1/ko not_active IP Right Cessation
- 1996-03-25 JP JP8068718A patent/JPH08339989A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5614060A (en) | 1997-03-25 |
EP0734046A3 (de) | 1996-10-02 |
JPH08339989A (ja) | 1996-12-24 |
ATE191584T1 (de) | 2000-04-15 |
DE69607509T2 (de) | 2000-08-10 |
KR960035871A (ko) | 1996-10-28 |
KR100403115B1 (ko) | 2004-02-11 |
EP0734046B1 (de) | 2000-04-05 |
EP0734046A2 (de) | 1996-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |