DE69603041T2 - Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der Dampfphase - Google Patents
Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der DampfphaseInfo
- Publication number
- DE69603041T2 DE69603041T2 DE69603041T DE69603041T DE69603041T2 DE 69603041 T2 DE69603041 T2 DE 69603041T2 DE 69603041 T DE69603041 T DE 69603041T DE 69603041 T DE69603041 T DE 69603041T DE 69603041 T2 DE69603041 T2 DE 69603041T2
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- oxide layers
- producing oxide
- producing
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000007740 vapor deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7060331A JPH08259386A (ja) | 1995-03-20 | 1995-03-20 | 酸化物薄膜の製造方法及びそれに用いる化学蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603041D1 DE69603041D1 (de) | 1999-08-05 |
DE69603041T2 true DE69603041T2 (de) | 2000-03-02 |
Family
ID=13139089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603041T Expired - Fee Related DE69603041T2 (de) | 1995-03-20 | 1996-03-19 | Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der Dampfphase |
Country Status (5)
Country | Link |
---|---|
US (2) | US5712001A (de) |
EP (1) | EP0733721B1 (de) |
JP (1) | JPH08259386A (de) |
KR (1) | KR100212906B1 (de) |
DE (1) | DE69603041T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
US5935641A (en) * | 1996-10-23 | 1999-08-10 | Texas Instruments Incorporated | Method of forming a piezoelectric layer with improved texture |
JP3587956B2 (ja) * | 1997-06-10 | 2004-11-10 | 古河電気工業株式会社 | 酸化物超電導線材およびその製造方法 |
US5975011A (en) * | 1997-12-22 | 1999-11-02 | Ball Semiconductor, Inc. | Apparatus for fabricating spherical shaped semiconductor integrated circuits |
WO2001040540A1 (en) * | 1999-12-02 | 2001-06-07 | Tegal Corporation | Improved reactor with heated and textured electrodes and surfaces |
US20030000921A1 (en) * | 2001-06-29 | 2003-01-02 | Ted Liang | Mask repair with electron beam-induced chemical etching |
JP4801996B2 (ja) * | 2006-01-05 | 2011-10-26 | 株式会社ニューフレアテクノロジー | 試料移動機構及び荷電粒子ビーム描画装置 |
EP2030958B1 (de) * | 2007-08-27 | 2013-04-10 | Rohm and Haas Electronic Materials LLC | Verfahren zur Herstellung von polykristallinen, monolithischen Magnesiumaluminatspinellen |
JP5902896B2 (ja) * | 2011-07-08 | 2016-04-13 | 東京エレクトロン株式会社 | 基板処理装置 |
FR2992276B1 (fr) | 2012-06-20 | 2014-07-18 | Sommital | Siege de remontee mecanique et installation equipee de ce siege |
JP6123390B2 (ja) * | 2013-03-15 | 2017-05-10 | 東洋製罐株式会社 | 高周波プラズマcvdによる成膜法 |
US10008367B2 (en) * | 2013-06-26 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gas diffuser unit, process chamber and wafer processing method |
US20150020974A1 (en) * | 2013-07-19 | 2015-01-22 | Psk Inc. | Baffle and apparatus for treating surface of baffle, and substrate treating apparatus |
CN113899790A (zh) * | 2021-08-30 | 2022-01-07 | 西安电子科技大学 | 一种丙酮传感器、制备方法及应用 |
CN114384125A (zh) * | 2021-12-12 | 2022-04-22 | 西安电子科技大学 | 一种丙酮传感器、制备方法及应用 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2411897A2 (fr) * | 1977-12-13 | 1979-07-13 | Alsthom Atlantique | Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma |
JPS58209118A (ja) * | 1982-05-29 | 1983-12-06 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体膜の製造装置 |
JPS58213413A (ja) * | 1982-06-04 | 1983-12-12 | Nippon Telegr & Teleph Corp <Ntt> | 半導体気相成長用装置 |
EP0265246B1 (de) * | 1986-10-21 | 1994-03-09 | Matsushita Electric Industrial Co., Ltd. | Magnetische Eisenoxydfilme und ihre Herstellung |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
KR910002310A (ko) * | 1988-06-29 | 1991-01-31 | 미다 가쓰시게 | 플라즈마 처리장치 |
DE3830249A1 (de) * | 1988-09-06 | 1990-03-15 | Schott Glaswerke | Plasmaverfahren zum beschichten ebener substrate |
JPH03191069A (ja) * | 1989-12-20 | 1991-08-21 | Matsushita Electric Ind Co Ltd | 薄膜形成装置および方法 |
JPH03203317A (ja) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
JP2973472B2 (ja) * | 1990-03-08 | 1999-11-08 | ヤマハ株式会社 | プラズマcvd装置 |
JPH03287770A (ja) * | 1990-04-05 | 1991-12-18 | Hitachi Electron Eng Co Ltd | 枚葉式常圧cvd装置 |
JP2538120B2 (ja) * | 1990-10-05 | 1996-09-25 | 松下電器産業株式会社 | 固定磁気ディスクとその製造方法およびそのディスクを用いた固定磁気ディスク装置 |
JP2985273B2 (ja) * | 1990-10-19 | 1999-11-29 | 日本電気株式会社 | 光cvd装置 |
JPH0697080A (ja) * | 1992-09-10 | 1994-04-08 | Mitsubishi Electric Corp | 化学気相成長装置用反応室および該反応室を用いた化学気相成長装置 |
-
1995
- 1995-03-20 JP JP7060331A patent/JPH08259386A/ja active Pending
-
1996
- 1996-03-19 EP EP96104339A patent/EP0733721B1/de not_active Expired - Lifetime
- 1996-03-19 DE DE69603041T patent/DE69603041T2/de not_active Expired - Fee Related
- 1996-03-20 KR KR1019960007531A patent/KR100212906B1/ko not_active IP Right Cessation
- 1996-03-20 US US08/619,076 patent/US5712001A/en not_active Expired - Lifetime
-
1997
- 1997-09-17 US US08/931,672 patent/US5876504A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5876504A (en) | 1999-03-02 |
JPH08259386A (ja) | 1996-10-08 |
US5712001A (en) | 1998-01-27 |
EP0733721B1 (de) | 1999-06-30 |
DE69603041D1 (de) | 1999-08-05 |
KR100212906B1 (ko) | 1999-08-02 |
KR960034479A (ko) | 1996-10-22 |
EP0733721A1 (de) | 1996-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |