DE69603041D1 - Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der Dampfphase - Google Patents

Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der Dampfphase

Info

Publication number
DE69603041D1
DE69603041D1 DE69603041T DE69603041T DE69603041D1 DE 69603041 D1 DE69603041 D1 DE 69603041D1 DE 69603041 T DE69603041 T DE 69603041T DE 69603041 T DE69603041 T DE 69603041T DE 69603041 D1 DE69603041 D1 DE 69603041D1
Authority
DE
Germany
Prior art keywords
vapor phase
oxide layers
phase deposition
producing oxide
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69603041T
Other languages
English (en)
Other versions
DE69603041T2 (de
Inventor
Eiji Fujii
Atsushi Tomozawa
Hideo Torii
Ryoichi Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69603041D1 publication Critical patent/DE69603041D1/de
Application granted granted Critical
Publication of DE69603041T2 publication Critical patent/DE69603041T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
DE69603041T 1995-03-20 1996-03-19 Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der Dampfphase Expired - Fee Related DE69603041T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7060331A JPH08259386A (ja) 1995-03-20 1995-03-20 酸化物薄膜の製造方法及びそれに用いる化学蒸着装置

Publications (2)

Publication Number Publication Date
DE69603041D1 true DE69603041D1 (de) 1999-08-05
DE69603041T2 DE69603041T2 (de) 2000-03-02

Family

ID=13139089

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69603041T Expired - Fee Related DE69603041T2 (de) 1995-03-20 1996-03-19 Verfahren und Vorrichtung zur Herstellung Oxydschichten durch Abscheidung aus der Dampfphase

Country Status (5)

Country Link
US (2) US5712001A (de)
EP (1) EP0733721B1 (de)
JP (1) JPH08259386A (de)
KR (1) KR100212906B1 (de)
DE (1) DE69603041T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670218A (en) * 1995-10-04 1997-09-23 Hyundai Electronics Industries Co., Ltd. Method for forming ferroelectric thin film and apparatus therefor
US5935641A (en) * 1996-10-23 1999-08-10 Texas Instruments Incorporated Method of forming a piezoelectric layer with improved texture
JP3587956B2 (ja) * 1997-06-10 2004-11-10 古河電気工業株式会社 酸化物超電導線材およびその製造方法
US5975011A (en) * 1997-12-22 1999-11-02 Ball Semiconductor, Inc. Apparatus for fabricating spherical shaped semiconductor integrated circuits
AU1786301A (en) * 1999-12-02 2001-06-12 Tegal Corporation Improved reactor with heated and textured electrodes and surfaces
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
JP4801996B2 (ja) * 2006-01-05 2011-10-26 株式会社ニューフレアテクノロジー 試料移動機構及び荷電粒子ビーム描画装置
JP5346189B2 (ja) * 2007-08-27 2013-11-20 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 多結晶性モノリシックアルミン酸マグネシウムスピネル
JP5902896B2 (ja) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
FR2992276B1 (fr) 2012-06-20 2014-07-18 Sommital Siege de remontee mecanique et installation equipee de ce siege
JP6123390B2 (ja) * 2013-03-15 2017-05-10 東洋製罐株式会社 高周波プラズマｃｖｄによる成膜法
US10008367B2 (en) * 2013-06-26 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Gas diffuser unit, process chamber and wafer processing method
US20150020974A1 (en) * 2013-07-19 2015-01-22 Psk Inc. Baffle and apparatus for treating surface of baffle, and substrate treating apparatus
CN113899790A (zh) * 2021-08-30 2022-01-07 西安电子科技大学 一种丙酮传感器、制备方法及应用
CN114384125A (zh) * 2021-12-12 2022-04-22 西安电子科技大学 一种丙酮传感器、制备方法及应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2411897A2 (fr) * 1977-12-13 1979-07-13 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
JPS58209118A (ja) * 1982-05-29 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体膜の製造装置
JPS58213413A (ja) * 1982-06-04 1983-12-12 Nippon Telegr & Teleph Corp <Ntt> 半導体気相成長用装置
DE3789271T2 (de) * 1986-10-21 1994-07-14 Matsushita Electric Ind Co Ltd Magnetische Eisenoxydfilme und ihre Herstellung.
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
KR910002310A (ko) * 1988-06-29 1991-01-31 미다 가쓰시게 플라즈마 처리장치
DE3830249A1 (de) * 1988-09-06 1990-03-15 Schott Glaswerke Plasmaverfahren zum beschichten ebener substrate
JPH03191069A (ja) * 1989-12-20 1991-08-21 Matsushita Electric Ind Co Ltd 薄膜形成装置および方法
JPH03203317A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2973472B2 (ja) * 1990-03-08 1999-11-08 ヤマハ株式会社 プラズマｃｖｄ装置
JPH03287770A (ja) * 1990-04-05 1991-12-18 Hitachi Electron Eng Co Ltd 枚葉式常圧ｃｖｄ装置
JP2538120B2 (ja) * 1990-10-05 1996-09-25 松下電器産業株式会社 固定磁気ディスクとその製造方法およびそのディスクを用いた固定磁気ディスク装置
JP2985273B2 (ja) * 1990-10-19 1999-11-29 日本電気株式会社 光ｃｖｄ装置
JPH0697080A (ja) * 1992-09-10 1994-04-08 Mitsubishi Electric Corp 化学気相成長装置用反応室および該反応室を用いた化学気相成長装置

Also Published As

Publication number Publication date
EP0733721A1 (de) 1996-09-25
JPH08259386A (ja) 1996-10-08
KR100212906B1 (ko) 1999-08-02
KR960034479A (ko) 1996-10-22
US5876504A (en) 1999-03-02
US5712001A (en) 1998-01-27
EP0733721B1 (de) 1999-06-30
DE69603041T2 (de) 2000-03-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee