DE69522629T2 - Spannungsreferenz für ferroelektrischen Speicher vom IT/IC-Typ - Google Patents

Spannungsreferenz für ferroelektrischen Speicher vom IT/IC-Typ

Info

Publication number
DE69522629T2
DE69522629T2 DE69522629T DE69522629T DE69522629T2 DE 69522629 T2 DE69522629 T2 DE 69522629T2 DE 69522629 T DE69522629 T DE 69522629T DE 69522629 T DE69522629 T DE 69522629T DE 69522629 T2 DE69522629 T2 DE 69522629T2
Authority
DE
Germany
Prior art keywords
type
voltage reference
ferroelectric memory
ferroelectric
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69522629T
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English (en)
Other versions
DE69522629D1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE69522629D1 publication Critical patent/DE69522629D1/de
Publication of DE69522629T2 publication Critical patent/DE69522629T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
DE69522629T 1994-09-16 1995-07-18 Spannungsreferenz für ferroelektrischen Speicher vom IT/IC-Typ Expired - Fee Related DE69522629T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/306,686 US5572459A (en) 1994-09-16 1994-09-16 Voltage reference for a ferroelectric 1T/1C based memory

Publications (2)

Publication Number Publication Date
DE69522629D1 DE69522629D1 (de) 2001-10-18
DE69522629T2 true DE69522629T2 (de) 2002-04-18

Family

ID=23186396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69522629T Expired - Fee Related DE69522629T2 (de) 1994-09-16 1995-07-18 Spannungsreferenz für ferroelektrischen Speicher vom IT/IC-Typ

Country Status (4)

Country Link
US (2) US5572459A (de)
EP (1) EP0702372B1 (de)
JP (1) JP2987316B2 (de)
DE (1) DE69522629T2 (de)

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KR100275107B1 (ko) 1997-12-30 2000-12-15 김영환 강유전체메모리장치및그구동방법
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JP4490514B2 (ja) * 1998-10-08 2010-06-30 株式会社東芝 強誘電体メモリ
KR100548847B1 (ko) 1998-10-28 2006-03-31 주식회사 하이닉스반도체 수명을 연장시킨 강유전체 메모리 장치
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KR100348576B1 (ko) * 1999-09-30 2002-08-13 동부전자 주식회사 강유전체 메모리
US6285604B1 (en) * 2000-01-06 2001-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy memory cells for high accuracy self-timing circuits in dual-port SRAM
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DE10014387C1 (de) * 2000-03-23 2001-09-27 Infineon Technologies Ag Integrierter Speicher mit Bitleitungsreferenzspannung und Verfahren zum Erzeugen der Bitleitungsreferenzspannung
JP3775716B2 (ja) * 2000-05-25 2006-05-17 シャープ株式会社 強誘電体型記憶装置およびそのテスト方法
KR100379513B1 (ko) * 2000-10-24 2003-04-10 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그의 구동방법
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US6804140B2 (en) * 2002-04-17 2004-10-12 Macronix International Co., Ltd. Capacitance sensing method of reading a ferroelectric RAM
US6888739B2 (en) 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US6804136B2 (en) 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US7154140B2 (en) 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US6996009B2 (en) 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US6970370B2 (en) * 2002-06-21 2005-11-29 Micron Technology, Inc. Ferroelectric write once read only memory for archival storage
US7193893B2 (en) 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US7221017B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
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JP4146680B2 (ja) * 2002-07-18 2008-09-10 松下電器産業株式会社 強誘電体記憶装置及びその読み出し方法
US6903959B2 (en) * 2002-09-24 2005-06-07 Infineon Technologies Aktiengesellschaft Sensing of memory integrated circuits
JP3756873B2 (ja) * 2002-11-11 2006-03-15 沖電気工業株式会社 半導体記憶装置
KR100510510B1 (ko) * 2002-12-28 2005-08-26 삼성전자주식회사 센싱속도 저하를 방지할 수 있는 비트라인 커플링 스킴을갖는 반도체 메모리장치
JP3878566B2 (ja) * 2003-03-14 2007-02-07 株式会社東芝 強誘電体メモリ及びそのテスト方法
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US7009864B2 (en) * 2003-12-29 2006-03-07 Texas Instruments Incorporated Zero cancellation scheme to reduce plateline voltage in ferroelectric memory
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US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
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JP5162276B2 (ja) * 2008-02-28 2013-03-13 ローム株式会社 強誘電体メモリ装置
JP2009223935A (ja) * 2008-03-14 2009-10-01 Toshiba Corp 強誘電体メモリ及びそのテスト方法
DE102010007629B4 (de) * 2010-02-11 2013-08-14 Texas Instruments Deutschland Gmbh Integrierte Schaltung mit einem FRAM-Speicher und Verfahren zum Gewähren eines Lesezugriffs auf einen FRAM-Speicher
US9368182B2 (en) * 2013-12-09 2016-06-14 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Memory cell
US9721638B1 (en) 2016-05-10 2017-08-01 Micron Technology, Inc. Boosting a digit line voltage for a write operation
WO2018140102A1 (en) 2017-01-30 2018-08-02 Micron Technology, Inc. Integrated memory assemblies comprising multiple memory array decks
US11133041B1 (en) * 2020-04-13 2021-09-28 Wuxi Petabyte Technologies Co, Ltd. Memory and calibration and operation methods thereof for reading data in memory cells
US11056178B1 (en) * 2020-07-20 2021-07-06 Micron Technology, Inc. Read operations based on a dynamic reference

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Also Published As

Publication number Publication date
US5822237A (en) 1998-10-13
EP0702372A2 (de) 1996-03-20
JP2987316B2 (ja) 1999-12-06
EP0702372A3 (de) 1996-06-12
DE69522629D1 (de) 2001-10-18
EP0702372B1 (de) 2001-09-12
JPH08115596A (ja) 1996-05-07
US5572459A (en) 1996-11-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee