DE69509184D1 - Optisches Modul mit oberflächenemittierendem Laser mit senkrechtem Resonator - Google Patents
Optisches Modul mit oberflächenemittierendem Laser mit senkrechtem ResonatorInfo
- Publication number
- DE69509184D1 DE69509184D1 DE69509184T DE69509184T DE69509184D1 DE 69509184 D1 DE69509184 D1 DE 69509184D1 DE 69509184 T DE69509184 T DE 69509184T DE 69509184 T DE69509184 T DE 69509184T DE 69509184 D1 DE69509184 D1 DE 69509184D1
- Authority
- DE
- Germany
- Prior art keywords
- optical module
- emitting laser
- surface emitting
- vertical resonator
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23383494 | 1994-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69509184D1 true DE69509184D1 (de) | 1999-05-27 |
DE69509184T2 DE69509184T2 (de) | 1999-10-28 |
Family
ID=16961301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69509184T Expired - Fee Related DE69509184T2 (de) | 1994-09-28 | 1995-09-26 | Optisches Modul mit oberflächenemittierendem Laser mit senkrechtem Resonator |
Country Status (3)
Country | Link |
---|---|
US (1) | US5796714A (de) |
EP (1) | EP0704947B1 (de) |
DE (1) | DE69509184T2 (de) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335383A (ja) | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH1131751A (ja) * | 1997-07-10 | 1999-02-02 | Sony Corp | 中空パッケージとその製造方法 |
US6531334B2 (en) | 1997-07-10 | 2003-03-11 | Sony Corporation | Method for fabricating hollow package with a solid-state image device |
JP3139423B2 (ja) * | 1997-09-02 | 2001-02-26 | 日本電気株式会社 | 光素子の実装構造 |
JPH11168262A (ja) | 1997-09-30 | 1999-06-22 | Canon Inc | 面型光デバイス、その製造方法、および表示装置 |
JPH11168263A (ja) * | 1997-09-30 | 1999-06-22 | Canon Inc | 光デバイス装置及びその製造方法 |
US6198168B1 (en) | 1998-01-20 | 2001-03-06 | Micron Technologies, Inc. | Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same |
US6150188A (en) | 1998-02-26 | 2000-11-21 | Micron Technology Inc. | Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same |
US6090636A (en) * | 1998-02-26 | 2000-07-18 | Micron Technology, Inc. | Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same |
FR2784795B1 (fr) * | 1998-10-16 | 2000-12-01 | Commissariat Energie Atomique | Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure |
JP3512669B2 (ja) * | 1999-03-18 | 2004-03-31 | 富士通カンタムデバイス株式会社 | 電極構造及びその製造方法並びに半導体発光装置 |
JP3959662B2 (ja) * | 1999-03-23 | 2007-08-15 | セイコーエプソン株式会社 | 光信号伝送装置およびその製造方法 |
JP4441014B2 (ja) * | 1999-07-26 | 2010-03-31 | 富士ゼロックス株式会社 | 無線通信用光電変換素子 |
US6234687B1 (en) | 1999-08-27 | 2001-05-22 | International Business Machines Corporation | Self-aligning method and interlocking assembly for attaching an optoelectronic device to a coupler |
US6249627B1 (en) * | 1999-09-13 | 2001-06-19 | Lucent Technologies, Inc. | Arrangement for self-aligning optical fibers to an array of surface emitting lasers |
EP1100123A1 (de) | 1999-11-09 | 2001-05-16 | Corning Incorporated | Verfahren zur Herstellung von Flipchiplothöckern durch Tauchbeloten |
US6337513B1 (en) * | 1999-11-30 | 2002-01-08 | International Business Machines Corporation | Chip packaging system and method using deposited diamond film |
CA2298158C (en) * | 2000-02-07 | 2008-04-15 | Itf Optical Technologies Inc.-Technologies Optiques Itf Inc. | Bonding optical fibers to substrates |
US6569754B2 (en) * | 2000-08-24 | 2003-05-27 | The Regents Of The University Of Michigan | Method for making a module including a microplatform |
US20030057363A1 (en) * | 2000-12-26 | 2003-03-27 | Anderson Gene R. | Optical power control system |
US6799902B2 (en) | 2000-12-26 | 2004-10-05 | Emcore Corporation | Optoelectronic mounting structure |
US6905260B2 (en) * | 2000-12-26 | 2005-06-14 | Emcore Corporation | Method and apparatus for coupling optical elements to optoelectronic devices for manufacturing optical transceiver modules |
US20020122637A1 (en) * | 2000-12-26 | 2002-09-05 | Anderson Gene R. | Optical transmitter, receiver or transceiver module |
US7021836B2 (en) * | 2000-12-26 | 2006-04-04 | Emcore Corporation | Attenuator and conditioner |
US6838689B1 (en) | 2002-02-14 | 2005-01-04 | Finisar Corporation | Backside alignment and packaging of opto-electronic devices |
JP3966067B2 (ja) * | 2002-04-26 | 2007-08-29 | 富士ゼロックス株式会社 | 表面発光型半導体レーザ素子およびその製造方法 |
JP2004006498A (ja) * | 2002-05-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP4373063B2 (ja) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP2004235190A (ja) * | 2003-01-28 | 2004-08-19 | Sony Corp | 光半導体装置 |
US8283679B2 (en) * | 2003-06-30 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having light-emitting element and light-receiving element for transmitting among circuits formed over the plurality of substrates |
US7696536B1 (en) * | 2003-08-22 | 2010-04-13 | The Board Of Trustees Of The University Of Illinois | Semiconductor method and device |
US7354780B2 (en) * | 2003-08-22 | 2008-04-08 | The Board Of Trustees Of The University Of Illinois | Semiconductor light emitting devices and methods |
US7286583B2 (en) * | 2003-08-22 | 2007-10-23 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser devices and methods |
WO2006005062A2 (en) | 2004-06-30 | 2006-01-12 | Cree, Inc. | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
US8916966B2 (en) * | 2004-09-28 | 2014-12-23 | Triquint Semiconductor, Inc. | Integrated circuit including a heat dissipation structure |
TWI352437B (en) * | 2007-08-27 | 2011-11-11 | Epistar Corp | Optoelectronic semiconductor device |
US7492803B2 (en) * | 2005-06-10 | 2009-02-17 | Hewlett-Packard Development Company, L.P. | Fiber-coupled single photon source |
JP4470819B2 (ja) * | 2005-06-17 | 2010-06-02 | セイコーエプソン株式会社 | 光素子 |
TWI422044B (zh) * | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
WO2007077740A1 (ja) * | 2005-12-26 | 2007-07-12 | Nec Corporation | 半導体光素子 |
US7535034B2 (en) * | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
US7711015B2 (en) * | 2007-04-02 | 2010-05-04 | The Board Of Trustees Of The University Of Illinois | Method for controlling operation of light emitting transistors and laser transistors |
US9190810B2 (en) | 2008-07-28 | 2015-11-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
US8179937B2 (en) * | 2009-01-08 | 2012-05-15 | Quantum Electro Opto Systems Sdn. Bhd. | High speed light emitting semiconductor methods and devices |
US8509274B2 (en) * | 2009-01-08 | 2013-08-13 | Quantum Electro Opto Systems Sdn. Bhd. | Light emitting and lasing semiconductor methods and devices |
CA2758595A1 (en) * | 2009-04-17 | 2010-10-21 | The Board Of Trustees Of The University Of Illinois | Light emitting semiconductor methods and devices |
WO2011056233A2 (en) | 2009-11-09 | 2011-05-12 | Quantum Electro Opto Systems Sdn. Bhd. | High speed communication |
US8406266B2 (en) * | 2011-08-31 | 2013-03-26 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
BR112014004118A2 (pt) | 2011-09-02 | 2017-06-13 | Quantum Electro Opto Systems Sdn Bhd | circuitos e técnicas optoeletrônicos |
US8842706B2 (en) | 2011-10-07 | 2014-09-23 | The Board Of Trustees Of The University Of Illinois | Opto-electronic oscillator and method |
US8970126B2 (en) | 2011-10-07 | 2015-03-03 | The Board Of Trustees Of The University Of Illinois | Opto-electronic devices and methods |
US9159873B2 (en) | 2011-11-14 | 2015-10-13 | Quantum Electro Opto Systems Sdn. Bhd. | High speed optical tilted charge devices and methods |
US9391427B2 (en) * | 2011-11-18 | 2016-07-12 | Intel Corporation | Thermal management in packaged VCSELs |
US8891573B2 (en) * | 2012-05-14 | 2014-11-18 | Arizona Board Of Regents | 6.1 angstrom III-V and II-VI semiconductor platform |
US10068181B1 (en) | 2015-04-27 | 2018-09-04 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafer and methods for making the same |
EP3633807B1 (de) * | 2017-05-31 | 2021-12-29 | Sony Group Corporation | Lichtemittierendes element und herstellungsverfahren für lichtemittierendes element |
US11276727B1 (en) | 2017-06-19 | 2022-03-15 | Rigetti & Co, Llc | Superconducting vias for routing electrical signals through substrates and their methods of manufacture |
US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
DE112018003684T5 (de) * | 2017-07-18 | 2020-05-14 | Sony Corporation | Lichtemittierendes element und array aus lichtemittierenden elementen |
US10833483B2 (en) * | 2017-12-07 | 2020-11-10 | Lumentum Operations Llc | Emitter array having structure for submount attachment |
US11233377B2 (en) * | 2018-01-26 | 2022-01-25 | Oepic Semiconductors Inc. | Planarization of backside emitting VCSEL and method of manufacturing the same for array application |
CN113056851B (zh) * | 2018-11-27 | 2024-02-13 | 索尼半导体解决方案公司 | 驱动装置和发光装置 |
DE102019111816A1 (de) * | 2019-05-07 | 2020-11-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines bauelements und bauelement |
US11002926B1 (en) | 2019-11-07 | 2021-05-11 | Hewlett Packard Enterprise Development Lp | Wavelength division multiplexing optical module |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5448493A (en) * | 1977-03-23 | 1979-04-17 | Toshiba Corp | Semiconductor optical device |
JPS63192279A (ja) * | 1987-02-03 | 1988-08-09 | Matsushita Electric Works Ltd | フオトカプラパツケ−ジ |
JPH0287584A (ja) * | 1988-09-22 | 1990-03-28 | Nec Corp | 面発光アレイ装置 |
US5132982A (en) * | 1991-05-09 | 1992-07-21 | Bell Communications Research, Inc. | Optically controlled surface-emitting lasers |
JPH0534743A (ja) * | 1991-07-27 | 1993-02-12 | Mitsubishi Kasei Corp | 非線形光学用高分子材料 |
US5357122A (en) * | 1991-09-05 | 1994-10-18 | Sony Corporation | Three-dimensional optical-electronic integrated circuit device with raised sections |
US5283447A (en) * | 1992-01-21 | 1994-02-01 | Bandgap Technology Corporation | Integration of transistors with vertical cavity surface emitting lasers |
US5408105A (en) * | 1992-02-19 | 1995-04-18 | Matsushita Electric Industrial Co., Ltd. | Optoelectronic semiconductor device with mesa |
JP2830591B2 (ja) * | 1992-03-12 | 1998-12-02 | 日本電気株式会社 | 半導体光機能素子 |
US5311404A (en) * | 1992-06-30 | 1994-05-10 | Hughes Aircraft Company | Electrical interconnection substrate with both wire bond and solder contacts |
JPH0793419B2 (ja) * | 1992-11-04 | 1995-10-09 | 日本電気株式会社 | 受光発光集積素子 |
-
1995
- 1995-09-25 US US08/533,364 patent/US5796714A/en not_active Expired - Lifetime
- 1995-09-26 DE DE69509184T patent/DE69509184T2/de not_active Expired - Fee Related
- 1995-09-26 EP EP95115103A patent/EP0704947B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0704947B1 (de) | 1999-04-21 |
US5796714A (en) | 1998-08-18 |
EP0704947A1 (de) | 1996-04-03 |
DE69509184T2 (de) | 1999-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8339 | Ceased/non-payment of the annual fee |