DE69429906T2 - Halbleiterstruktur und Herstellungsverfahren - Google Patents
Halbleiterstruktur und HerstellungsverfahrenInfo
- Publication number
- DE69429906T2 DE69429906T2 DE69429906T DE69429906T DE69429906T2 DE 69429906 T2 DE69429906 T2 DE 69429906T2 DE 69429906 T DE69429906 T DE 69429906T DE 69429906 T DE69429906 T DE 69429906T DE 69429906 T2 DE69429906 T2 DE 69429906T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- semiconductor structure
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31754493 | 1993-11-25 | ||
JP34558393 | 1993-12-22 | ||
JP22145594A JP3353802B2 (ja) | 1994-09-16 | 1994-09-16 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69429906D1 DE69429906D1 (de) | 2002-03-28 |
DE69429906T2 true DE69429906T2 (de) | 2002-08-01 |
Family
ID=27330550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69429906T Expired - Lifetime DE69429906T2 (de) | 1993-11-25 | 1994-11-25 | Halbleiterstruktur und Herstellungsverfahren |
Country Status (3)
Country | Link |
---|---|
US (1) | US5543354A (de) |
EP (1) | EP0665578B1 (de) |
DE (1) | DE69429906T2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962863A (en) * | 1993-09-09 | 1999-10-05 | The United States Of America As Represented By The Secretary Of The Navy | Laterally disposed nanostructures of silicon on an insulating substrate |
KR100446598B1 (ko) * | 1997-09-04 | 2005-05-16 | 삼성전자주식회사 | 단일전자터널링소자및그제조방법 |
KR100249774B1 (ko) * | 1997-11-25 | 2000-03-15 | 정선종 | 고품위 지에이에이에스(gaas) 양자점의 성장방법 |
DE19819259A1 (de) * | 1998-04-29 | 1999-11-04 | Max Planck Gesellschaft | Verfahren zur epitaktischen Herstellung von Halbleiter-Wachstumsinseln |
KR100301116B1 (ko) | 1998-12-02 | 2001-10-20 | 오길록 | 양자점 구조를 갖는 화합물반도체 기판의 제조 방법 |
US6816525B2 (en) | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
US6600169B2 (en) * | 2000-09-22 | 2003-07-29 | Andreas Stintz | Quantum dash device |
FR2814854B1 (fr) * | 2000-10-02 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'ilots juxtaposes par depot autoorganise sur un substrat et structure ainsi obtenue |
JP2002141495A (ja) * | 2000-11-02 | 2002-05-17 | Takashi Katoda | 集束イオンビームを用いて作製した極微細構造を有する電子デバイス及び光デバイス |
JP3453558B2 (ja) * | 2000-12-25 | 2003-10-06 | 松下電器産業株式会社 | 窒化物半導体素子 |
WO2002071562A2 (en) * | 2001-03-02 | 2002-09-12 | Science & Technology Corporation @ Unm | Quantum dot vertical cavity surface emitting laser |
GB2388957A (en) * | 2002-05-24 | 2003-11-26 | Imp College Innovations Ltd | Quantum dots for extended wavelength operation |
AU2002368001A1 (en) * | 2002-06-10 | 2003-12-22 | Agilent Technologies, Inc. | Quantum dot gain chip |
US6859477B2 (en) * | 2003-01-07 | 2005-02-22 | University Of Texas | Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor |
US7282732B2 (en) * | 2003-10-24 | 2007-10-16 | Stc. Unm | Quantum dot structures |
US8595654B1 (en) * | 2006-10-03 | 2013-11-26 | Hrl Laboratories, Llc | Semiconductor device coding using quantum dot technology |
CN100589012C (zh) * | 2007-10-17 | 2010-02-10 | 中国科学院半导体研究所 | 量子点光调制器有源区结构 |
IL196312A (en) | 2008-12-31 | 2014-08-31 | Renata Reisfeld | Glowing sun rays center |
JP5801542B2 (ja) * | 2010-07-13 | 2015-10-28 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
CN103762256B (zh) * | 2014-01-15 | 2016-03-02 | 华南理工大学 | 生长在Si衬底上的InGaAs薄膜及其制备方法 |
CN103887382A (zh) * | 2014-04-02 | 2014-06-25 | 叶瑾琳 | 一种高效率的发光二极管以及激光器 |
US9240449B2 (en) * | 2014-05-26 | 2016-01-19 | Yu-chen Chang | Zero-dimensional electron devices and methods of fabricating the same |
WO2018204991A1 (en) | 2017-05-12 | 2018-11-15 | The Australian National University | A frequency conversion device and process |
US10698293B2 (en) * | 2017-05-12 | 2020-06-30 | The Australian National University | Frequency conversion of electromagnetic radiation |
US10615198B1 (en) | 2018-01-11 | 2020-04-07 | Apple Inc. | Isolation structures in film-based image sensors |
US10868203B1 (en) | 2018-04-25 | 2020-12-15 | Apple Inc. | Film-based image sensor with planarized contacts |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4122407A (en) * | 1976-04-06 | 1978-10-24 | International Business Machines Corporation | Heterostructure junction light emitting or responding or modulating devices |
JPS6394230A (ja) * | 1986-10-09 | 1988-04-25 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US4802181A (en) * | 1986-11-27 | 1989-01-31 | Nec Corporation | Semiconductor superlattice light emitting sevice |
JP2575901B2 (ja) * | 1989-11-13 | 1997-01-29 | 新技術事業団 | グリッド入り量子構造 |
JP2515051B2 (ja) * | 1990-11-14 | 1996-07-10 | 三菱電機株式会社 | 半導体光素子及びその製造方法 |
US5079774A (en) * | 1990-12-27 | 1992-01-07 | International Business Machines Corporation | Polarization-tunable optoelectronic devices |
EP0535293A1 (de) * | 1991-01-29 | 1993-04-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung einer zusammengesetzten Halbleitervorrichtung |
JP2799372B2 (ja) * | 1991-03-28 | 1998-09-17 | 光技術研究開発株式会社 | 量子細線レーザ及びその製造方法 |
US5363395A (en) * | 1992-12-28 | 1994-11-08 | North American Philips Corporation | Blue-green injection laser structure utilizing II-VI compounds |
-
1994
- 1994-11-25 DE DE69429906T patent/DE69429906T2/de not_active Expired - Lifetime
- 1994-11-25 EP EP94118561A patent/EP0665578B1/de not_active Expired - Lifetime
- 1994-11-30 US US08/347,778 patent/US5543354A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0665578A3 (de) | 1996-10-30 |
EP0665578B1 (de) | 2002-02-20 |
US5543354A (en) | 1996-08-06 |
DE69429906D1 (de) | 2002-03-28 |
EP0665578A2 (de) | 1995-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |