DE69417981T2 - Filter für Bildsensor - Google Patents

Filter für Bildsensor

Info

Publication number
DE69417981T2
DE69417981T2 DE69417981T DE69417981T DE69417981T2 DE 69417981 T2 DE69417981 T2 DE 69417981T2 DE 69417981 T DE69417981 T DE 69417981T DE 69417981 T DE69417981 T DE 69417981T DE 69417981 T2 DE69417981 T2 DE 69417981T2
Authority
DE
Germany
Prior art keywords
image sensor
sensor filter
filter
image
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417981T
Other languages
English (en)
Other versions
DE69417981D1 (de
Inventor
Junichi Sakamoto
Seitoku Tsukamoto
Mitsuharu Sawamura
Motomu Fukasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69417981D1 publication Critical patent/DE69417981D1/de
Publication of DE69417981T2 publication Critical patent/DE69417981T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024Details of scanning heads ; Means for illuminating the original
    • H04N1/028Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69417981T 1993-10-22 1994-10-20 Filter für Bildsensor Expired - Fee Related DE69417981T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28629193 1993-10-22
JP28629293 1993-10-22

Publications (2)

Publication Number Publication Date
DE69417981D1 DE69417981D1 (de) 1999-05-27
DE69417981T2 true DE69417981T2 (de) 1999-12-09

Family

ID=26556242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417981T Expired - Fee Related DE69417981T2 (de) 1993-10-22 1994-10-20 Filter für Bildsensor

Country Status (4)

Country Link
US (1) US5648653A (de)
EP (1) EP0650199B1 (de)
KR (1) KR950012107A (de)
DE (1) DE69417981T2 (de)

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US7566853B2 (en) * 2005-08-12 2009-07-28 Tessera, Inc. Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture
US20070152139A1 (en) * 2005-12-30 2007-07-05 Moores Mark D Techniques to control illumination for image sensors
CN101371360A (zh) * 2006-02-15 2009-02-18 松下电器产业株式会社 固态成像装置及照相机
US20070235771A1 (en) * 2006-04-05 2007-10-11 Yan-Hsiu Liu Semiconductor image sensor and method for fabricating the same
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IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
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US8872293B2 (en) * 2011-02-15 2014-10-28 Sony Corporation Solid-state imaging device and method of manufacturing the same and electronic apparatus
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CN103713729B (zh) * 2012-09-29 2018-04-27 腾讯科技(深圳)有限公司 人机交互系统及红外影像捕捉装置
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US10429964B2 (en) * 2014-05-01 2019-10-01 Ulvac, Inc. Touch panel, method of manufacturing touch panel, and optical thin film
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JP6509258B2 (ja) 2014-06-18 2019-05-08 ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. 金属誘電体光学フィルター、センサーデバイス、および製造方法
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JP6616571B2 (ja) 2014-12-12 2019-12-04 ローム株式会社 光検出装置および電子機器
CN110177191B (zh) * 2019-05-10 2024-02-06 惠州市航泰光电有限公司 一种用于3d摄像头人脸识别模块的盖板及其生产方法
CN117109643B (zh) * 2023-10-24 2024-01-02 中国科学院长春光学精密机械与物理研究所 应用透射式角度传感器件的测试方法及系统

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Also Published As

Publication number Publication date
US5648653A (en) 1997-07-15
KR950012107A (ko) 1995-05-16
EP0650199B1 (de) 1999-04-21
EP0650199A1 (de) 1995-04-26
DE69417981D1 (de) 1999-05-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee