DE69417981T2 - Filter für Bildsensor - Google Patents
Filter für BildsensorInfo
- Publication number
- DE69417981T2 DE69417981T2 DE69417981T DE69417981T DE69417981T2 DE 69417981 T2 DE69417981 T2 DE 69417981T2 DE 69417981 T DE69417981 T DE 69417981T DE 69417981 T DE69417981 T DE 69417981T DE 69417981 T2 DE69417981 T2 DE 69417981T2
- Authority
- DE
- Germany
- Prior art keywords
- image sensor
- sensor filter
- filter
- image
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28629193 | 1993-10-22 | ||
JP28629293 | 1993-10-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69417981D1 DE69417981D1 (de) | 1999-05-27 |
DE69417981T2 true DE69417981T2 (de) | 1999-12-09 |
Family
ID=26556242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69417981T Expired - Fee Related DE69417981T2 (de) | 1993-10-22 | 1994-10-20 | Filter für Bildsensor |
Country Status (4)
Country | Link |
---|---|
US (1) | US5648653A (de) |
EP (1) | EP0650199B1 (de) |
KR (1) | KR950012107A (de) |
DE (1) | DE69417981T2 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2312090A (en) * | 1996-04-10 | 1997-10-15 | Rank Taylor Hobson Ltd | Photosensitive device |
US5929432A (en) * | 1996-05-30 | 1999-07-27 | Kabushiki Kaisha Toshiba | Solid state image sensing device and image sensor using the same |
US5808297A (en) * | 1996-07-22 | 1998-09-15 | Xerox Corporation | Reflective test patches for translucent color filters in photosensitive semiconductor chips |
IL123207A0 (en) | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
US6657663B2 (en) * | 1998-05-06 | 2003-12-02 | Intel Corporation | Pre-subtracting architecture for enabling multiple spectrum image sensing |
US6157019A (en) * | 1999-03-31 | 2000-12-05 | Xerox Corporation | Edge photosite definition by opaque filter layer |
US6252220B1 (en) | 1999-04-26 | 2001-06-26 | Xerox Corporation | Sensor cover glass with infrared filter |
KR100340068B1 (ko) | 1999-06-28 | 2002-06-12 | 박종섭 | 광투과도 개선을 위하여 광학적으로 설계된 층을 갖는 이미지센서 |
IT1313260B1 (it) * | 1999-07-28 | 2002-07-17 | St Microelectronics Srl | Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione. |
US6496256B1 (en) | 1999-10-01 | 2002-12-17 | Applied Materials, Inc. | Inspection systems using sensor array and double threshold arrangement |
EP1458028B1 (de) | 1999-12-02 | 2011-05-11 | Nikon Corporation | Festkörperbildsensor und dessen Herstellungsverfahren |
EP1283733A1 (de) | 2000-05-10 | 2003-02-19 | Thomas Jefferson University | Photorezeptorsystem zur melatoninsteuerung und phototheraphie |
JP2001339055A (ja) * | 2000-05-29 | 2001-12-07 | Asahi Optical Co Ltd | 固体撮像装置のカバー部材と固体撮像装置 |
JP4139051B2 (ja) * | 2000-06-28 | 2008-08-27 | 富士フイルム株式会社 | リニアイメージセンサチップおよびリニアイメージセンサ |
US6316284B1 (en) | 2000-09-07 | 2001-11-13 | Xerox Corporation | Infrared correction in color scanners |
US6768565B1 (en) * | 2000-09-07 | 2004-07-27 | Xerox Corporation | Infrared correction in color scanners |
EP1356718A4 (de) | 2000-12-21 | 2009-12-02 | Tessera Tech Hungary Kft | Verpackte integrierte schaltungen und verfahren zu ihrer herstellung |
US6998595B2 (en) * | 2001-03-08 | 2006-02-14 | Xerox Corporation | Color filter configuration for a silicon wafer to be diced into photosensitive chips |
JP4033286B2 (ja) * | 2001-03-19 | 2008-01-16 | 日本板硝子株式会社 | 高屈折率誘電体膜とその製造方法 |
DE10145701A1 (de) * | 2001-09-17 | 2003-04-10 | Infineon Technologies Ag | Fluoreszenz-Biosensorchip und Fluoreszenz-Biosensorchip-Anordnung |
US20050041292A1 (en) * | 2002-05-21 | 2005-02-24 | Wheatley John A. | Visible wavelength detector systems and filters therefor |
US7095009B2 (en) * | 2002-05-21 | 2006-08-22 | 3M Innovative Properties Company | Photopic detector system and filter therefor |
US6818962B2 (en) * | 2002-10-25 | 2004-11-16 | Omnivision International Holding Ltd | Image sensor having integrated thin film infrared filter |
JP2004173139A (ja) * | 2002-11-22 | 2004-06-17 | Pentax Corp | 撮像素子ユニット |
US7133197B2 (en) * | 2004-02-23 | 2006-11-07 | Jds Uniphase Corporation | Metal-dielectric coating for image sensor lids |
US20050207044A1 (en) * | 2004-03-18 | 2005-09-22 | Oon Chin H | Color filter and method for fabricating the same |
US7285768B2 (en) * | 2004-03-18 | 2007-10-23 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Color photodetector array |
US20080259191A1 (en) * | 2004-09-17 | 2008-10-23 | Kunihiro Imamura | Image Input Apparatus that Resolves Color Difference |
SG141445A1 (en) * | 2004-10-14 | 2008-04-28 | Eklin Medical Systems Inc | Polychromic digital radiography detector with patterned mask for single-exposure energy-sensitive x-ray imaging |
US7456384B2 (en) * | 2004-12-10 | 2008-11-25 | Sony Corporation | Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor |
US7566853B2 (en) * | 2005-08-12 | 2009-07-28 | Tessera, Inc. | Image sensor employing a plurality of photodetector arrays and/or rear-illuminated architecture |
US20070152139A1 (en) * | 2005-12-30 | 2007-07-05 | Moores Mark D | Techniques to control illumination for image sensors |
CN101371360A (zh) * | 2006-02-15 | 2009-02-18 | 松下电器产业株式会社 | 固态成像装置及照相机 |
US20070235771A1 (en) * | 2006-04-05 | 2007-10-11 | Yan-Hsiu Liu | Semiconductor image sensor and method for fabricating the same |
DE202007019582U1 (de) | 2007-11-15 | 2014-01-30 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Messaufbau zum Erfassen der Verteilung mindestens einer Zustandsgröße in einem Messfeld mit verschiedenen Sonden |
JP2010103378A (ja) * | 2008-10-24 | 2010-05-06 | Omron Corp | 光センサ |
JP4873001B2 (ja) * | 2008-12-10 | 2012-02-08 | ソニー株式会社 | 固体撮像装置とその製造方法、電子機器並びに半導体装置 |
US20100163759A1 (en) * | 2008-12-31 | 2010-07-01 | Stmicroelectronics S.R.L. | Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process |
IT1392502B1 (it) * | 2008-12-31 | 2012-03-09 | St Microelectronics Srl | Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione |
US8445849B2 (en) * | 2009-03-18 | 2013-05-21 | Pixart Imaging Inc. | IR sensing device |
KR20110061677A (ko) * | 2009-12-02 | 2011-06-10 | 삼성전자주식회사 | 영상 센서 및 이의 제조 방법. |
US8872293B2 (en) * | 2011-02-15 | 2014-10-28 | Sony Corporation | Solid-state imaging device and method of manufacturing the same and electronic apparatus |
US10014335B2 (en) | 2012-09-14 | 2018-07-03 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state imaging device and camera module |
CN103713729B (zh) * | 2012-09-29 | 2018-04-27 | 腾讯科技(深圳)有限公司 | 人机交互系统及红外影像捕捉装置 |
DE102013112023A1 (de) * | 2012-11-02 | 2014-05-08 | Maxim Integrated Products, Inc. | System und Verfahren zum Reduzieren der Umgebungslichtempfindlichkeit von Infrarotdetektoren (IR-Detektoren) |
US9448346B2 (en) | 2012-12-19 | 2016-09-20 | Viavi Solutions Inc. | Sensor device including one or more metal-dielectric optical filters |
US10197716B2 (en) | 2012-12-19 | 2019-02-05 | Viavi Solutions Inc. | Metal-dielectric optical filter, sensor device, and fabrication method |
US9568362B2 (en) | 2012-12-19 | 2017-02-14 | Viavi Solutions Inc. | Spectroscopic assembly and method |
US10429964B2 (en) * | 2014-05-01 | 2019-10-01 | Ulvac, Inc. | Touch panel, method of manufacturing touch panel, and optical thin film |
FR3022396B1 (fr) * | 2014-06-13 | 2016-07-22 | Sagem Defense Securite | Capteur matriciel bispectral et son procede de fabrication |
JP6509258B2 (ja) | 2014-06-18 | 2019-05-08 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 金属誘電体光学フィルター、センサーデバイス、および製造方法 |
US20160035914A1 (en) * | 2014-07-31 | 2016-02-04 | Analog Devices, Inc. | Filter coating design for optical sensors |
KR102305998B1 (ko) * | 2014-12-08 | 2021-09-28 | 엘지이노텍 주식회사 | 영상 처리 장치 |
JP6616571B2 (ja) | 2014-12-12 | 2019-12-04 | ローム株式会社 | 光検出装置および電子機器 |
CN110177191B (zh) * | 2019-05-10 | 2024-02-06 | 惠州市航泰光电有限公司 | 一种用于3d摄像头人脸识别模块的盖板及其生产方法 |
CN117109643B (zh) * | 2023-10-24 | 2024-01-02 | 中国科学院长春光学精密机械与物理研究所 | 应用透射式角度传感器件的测试方法及系统 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3679291A (en) * | 1970-04-21 | 1972-07-25 | Optical Coating Laboratory Inc | Filter with neutral transmitting multilayer coating having asymmetric reflectance |
NL7202478A (de) * | 1972-02-25 | 1973-08-28 | ||
US3996461A (en) * | 1975-03-31 | 1976-12-07 | Texas Instruments Incorporated | Silicon photosensor with optical thin film filter |
JPS6038681B2 (ja) * | 1978-09-27 | 1985-09-02 | キヤノン株式会社 | 紫外用多層膜 |
JPS57184937A (en) * | 1981-05-08 | 1982-11-13 | Omron Tateisi Electronics Co | Color discriminating element |
JPS57201825A (en) * | 1981-06-05 | 1982-12-10 | Omron Tateisi Electronics Co | Light-sensitive device |
JPS59225564A (ja) * | 1983-06-06 | 1984-12-18 | Mitsubishi Electric Corp | 固体撮像装置 |
JPS59230123A (ja) * | 1983-06-10 | 1984-12-24 | Agency Of Ind Science & Technol | 光センサ |
US4679068A (en) * | 1985-07-25 | 1987-07-07 | General Electric Company | Composite visible/thermal-infrared imaging system |
US5166784A (en) * | 1985-10-25 | 1992-11-24 | Canon Kabushiki Kaisha | Original reading apparatus, having a filter, for reading a color original |
JPS62174716A (ja) * | 1987-01-24 | 1987-07-31 | Olympus Optical Co Ltd | 内視鏡装置 |
JPH0290870A (ja) * | 1988-09-28 | 1990-03-30 | Canon Inc | 画像読取装置 |
JPH02170101A (ja) * | 1988-12-23 | 1990-06-29 | Minolta Camera Co Ltd | 干渉フィルター |
JPH02266655A (ja) * | 1989-04-06 | 1990-10-31 | Konica Corp | カラー画像読取り装置 |
US4956555A (en) * | 1989-06-30 | 1990-09-11 | Rockwell International Corporation | Multicolor focal plane arrays |
US4960310A (en) * | 1989-08-04 | 1990-10-02 | Optical Corporation Of America | Broad band nonreflective neutral density filter |
US5164858A (en) * | 1990-03-07 | 1992-11-17 | Deposition Sciences, Inc. | Multi-spectral filter |
US5377045A (en) * | 1990-05-10 | 1994-12-27 | The Boc Group, Inc. | Durable low-emissivity solar control thin film coating |
ES2095271T3 (es) * | 1990-07-05 | 1997-02-16 | Asahi Glass Co Ltd | Pelicula de baja emisividad. |
JPH05308107A (ja) * | 1991-07-01 | 1993-11-19 | Sumitomo Electric Ind Ltd | 半導体装置及びその製作方法 |
JP3130601B2 (ja) * | 1991-11-12 | 2001-01-31 | 九州日本電気株式会社 | 固体撮像素子用光学カラーフィルター及びその製造方法並びに固体撮像素子 |
US5444302A (en) * | 1992-12-25 | 1995-08-22 | Hitachi, Ltd. | Semiconductor device including multi-layer conductive thin film of polycrystalline material |
US5337191A (en) * | 1993-04-13 | 1994-08-09 | Photran Corporation | Broad band pass filter including metal layers and dielectric layers of alternating refractive index |
-
1994
- 1994-10-18 US US08/324,707 patent/US5648653A/en not_active Expired - Fee Related
- 1994-10-20 DE DE69417981T patent/DE69417981T2/de not_active Expired - Fee Related
- 1994-10-20 EP EP94116577A patent/EP0650199B1/de not_active Expired - Lifetime
- 1994-10-21 KR KR1019940026913A patent/KR950012107A/ko active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
US5648653A (en) | 1997-07-15 |
KR950012107A (ko) | 1995-05-16 |
EP0650199B1 (de) | 1999-04-21 |
EP0650199A1 (de) | 1995-04-26 |
DE69417981D1 (de) | 1999-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |