US5747857A
(en)
*
|
1991-03-13 |
1998-05-05 |
Matsushita Electric Industrial Co., Ltd. |
Electronic components having high-frequency elements and methods of manufacture therefor
|
EP0666983B1
(de)
*
|
1992-04-30 |
1997-02-12 |
Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. |
Sensor mit hoher empfindlichkeit
|
EP0622897B1
(de)
*
|
1993-04-28 |
2001-03-07 |
Matsushita Electric Industrial Co., Ltd. |
Akustische Oberflächenwellenanordnung und Herstellungsverfahren dafür
|
JP3171043B2
(ja)
*
|
1995-01-11 |
2001-05-28 |
株式会社村田製作所 |
弾性表面波装置
|
JP3358688B2
(ja)
*
|
1995-04-10 |
2002-12-24 |
三洋電機株式会社 |
弾性表面波素子
|
DE69609559T2
(de)
*
|
1995-05-08 |
2001-04-19 |
Matsushita Electric Ind Co Ltd |
Verfahren zur Herstellung eines Verbundsubstrats und eine dieses Substrat benutzende piezoelektrischer Anordnung
|
US5759753A
(en)
*
|
1995-07-19 |
1998-06-02 |
Matsushita Electric Industrial Co., Ltd. |
Piezoelectric device and method of manufacturing the same
|
JP3168925B2
(ja)
*
|
1995-11-21 |
2001-05-21 |
株式会社村田製作所 |
表面波装置
|
JPH09199974A
(ja)
*
|
1996-01-19 |
1997-07-31 |
Nec Corp |
弾性表面波装置
|
TW330341B
(en)
*
|
1996-01-19 |
1998-04-21 |
Murada Seisakusho Kk |
Metallic thin film and method of manufacturing the same and surface acoustic wave device using the metallic thin film and the same thereof
|
US5760524A
(en)
*
|
1996-09-03 |
1998-06-02 |
Motorola, Inc. |
SAW device and method for forming same
|
US5994821A
(en)
*
|
1996-11-29 |
1999-11-30 |
Matsushita Electric Industrial Co., Ltd. |
Displacement control actuator
|
US6127768A
(en)
*
|
1997-05-09 |
2000-10-03 |
Kobe Steel Usa, Inc. |
Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device
|
JP3880150B2
(ja)
*
|
1997-06-02 |
2007-02-14 |
松下電器産業株式会社 |
弾性表面波素子
|
JP3376355B2
(ja)
*
|
1997-07-18 |
2003-02-10 |
株式会社東芝 |
弾性表面波フィルタ
|
JPH11136083A
(ja)
*
|
1997-08-27 |
1999-05-21 |
Murata Mfg Co Ltd |
表面波装置
|
JPH11205071A
(ja)
|
1998-01-13 |
1999-07-30 |
Murata Mfg Co Ltd |
弾性表面波装置
|
JP3717034B2
(ja)
|
1998-11-10 |
2005-11-16 |
株式会社村田製作所 |
弾性表面波素子
|
US6236141B1
(en)
|
1998-12-14 |
2001-05-22 |
Matsushita Electric Industrial Co., Ltd. |
Surface acoustic wave element
|
FR2788176B1
(fr)
*
|
1998-12-30 |
2001-05-25 |
Thomson Csf |
Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication
|
JP2000212754A
(ja)
*
|
1999-01-22 |
2000-08-02 |
Sony Corp |
めっき方法及びその装置、並びにめっき構造
|
JP2000269779A
(ja)
*
|
1999-03-18 |
2000-09-29 |
Shin Etsu Chem Co Ltd |
弾性表面波又は疑似弾性表面波デバイス用圧電性単結晶ウェーハ及びその製造方法
|
DE19925800C1
(de)
*
|
1999-06-03 |
2000-12-21 |
Dresden Ev Inst Festkoerper |
Wandler für akustische Oberflächenwellen
|
US6426583B1
(en)
*
|
1999-06-14 |
2002-07-30 |
Matsushita Electric Industrial Co., Ltd. |
Surface acoustic wave element, method for producing the same and surface acoustic wave device using the same
|
US6627965B1
(en)
|
2000-02-08 |
2003-09-30 |
Boston Microsystems, Inc. |
Micromechanical device with an epitaxial layer
|
US6953977B2
(en)
*
|
2000-02-08 |
2005-10-11 |
Boston Microsystems, Inc. |
Micromechanical piezoelectric device
|
JP2001249606A
(ja)
|
2000-03-02 |
2001-09-14 |
Sony Corp |
ホログラムプリントシステム及びホログラムプリント方法、並びに撮影装置
|
US20040060257A1
(en)
*
|
2000-06-19 |
2004-04-01 |
Frank Venegas |
Stanchion covers
|
US6555451B1
(en)
|
2001-09-28 |
2003-04-29 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making shallow diffusion junctions in semiconductors using elemental doping
|
US6593212B1
(en)
|
2001-10-29 |
2003-07-15 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making electro-optical devices using a hydrogenion splitting technique
|
US8470019B1
(en)
*
|
2001-11-30 |
2013-06-25 |
Advanced Cardiovascular Systems, Inc. |
TiNxOy modified surface for an implantable device and a method of producing the same
|
TWI282660B
(en)
*
|
2001-12-27 |
2007-06-11 |
Murata Manufacturing Co |
Surface acoustic wave device and manufacturing method therefor
|
US6562127B1
(en)
|
2002-01-16 |
2003-05-13 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of making mosaic array of thin semiconductor material of large substrates
|
US6607969B1
(en)
|
2002-03-18 |
2003-08-19 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
|
US6767749B2
(en)
|
2002-04-22 |
2004-07-27 |
The United States Of America As Represented By The Secretary Of The Navy |
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
|
US7105980B2
(en)
*
|
2002-07-03 |
2006-09-12 |
Sawtek, Inc. |
Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics
|
US7191787B1
(en)
|
2003-02-03 |
2007-03-20 |
Lam Research Corporation |
Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid
|
US7237564B1
(en)
*
|
2003-02-20 |
2007-07-03 |
Lam Research Corporation |
Distribution of energy in a high frequency resonating wafer processing system
|
DE10329866B4
(de)
*
|
2003-07-02 |
2013-10-31 |
Epcos Ag |
Piezoelektrisches Substrat mit Temperaturkompensation und Verfahren zur Herstellung eines SAW-Bauelements
|
JP2005057425A
(ja)
*
|
2003-08-01 |
2005-03-03 |
Seiko Epson Corp |
発振回路及びこれを使用した無線通信装置
|
US7309943B2
(en)
*
|
2003-09-08 |
2007-12-18 |
New Scale Technologies, Inc. |
Mechanism comprised of ultrasonic lead screw motor
|
US7170214B2
(en)
*
|
2003-09-08 |
2007-01-30 |
New Scale Technologies, Inc. |
Mechanism comprised of ultrasonic lead screw motor
|
US6940209B2
(en)
|
2003-09-08 |
2005-09-06 |
New Scale Technologies |
Ultrasonic lead screw motor
|
JP2005176152A
(ja)
*
|
2003-12-15 |
2005-06-30 |
Alps Electric Co Ltd |
弾性表面波素子及びその製造方法
|
DE102004045181B4
(de)
|
2004-09-17 |
2016-02-04 |
Epcos Ag |
SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung
|
JP4359551B2
(ja)
*
|
2004-10-08 |
2009-11-04 |
アルプス電気株式会社 |
弾性表面波素子の製造方法
|
US6938905B1
(en)
|
2004-11-05 |
2005-09-06 |
Haiming Tsai |
Hand truck
|
US7619347B1
(en)
|
2005-05-24 |
2009-11-17 |
Rf Micro Devices, Inc. |
Layer acoustic wave device and method of making the same
|
JP2007243918A
(ja)
*
|
2006-02-08 |
2007-09-20 |
Seiko Epson Corp |
弾性表面波素子および電子機器
|
US8490260B1
(en)
|
2007-01-17 |
2013-07-23 |
Rf Micro Devices, Inc. |
Method of manufacturing SAW device substrates
|
US7408286B1
(en)
*
|
2007-01-17 |
2008-08-05 |
Rf Micro Devices, Inc. |
Piezoelectric substrate for a saw device
|
JP4316632B2
(ja)
*
|
2007-04-16 |
2009-08-19 |
富士通メディアデバイス株式会社 |
弾性表面波装置及び分波器
|
US8115365B2
(en)
*
|
2008-04-15 |
2012-02-14 |
Ngk Insulators, Ltd. |
Surface acoustic wave devices
|
US7911111B2
(en)
*
|
2008-04-15 |
2011-03-22 |
Ngk Insulators, Ltd. |
Surface acoustic wave devices
|
JP2010068503A
(ja)
*
|
2008-08-13 |
2010-03-25 |
Seiko Epson Corp |
弾性表面波素子
|
JP2012514316A
(ja)
*
|
2008-09-24 |
2012-06-21 |
エス・オー・アイ・テック・シリコン・オン・インシュレーター・テクノロジーズ |
半導体材料、半導体構造、デバイスおよびそれらを含む加工された基板の緩和した層を形成する方法
|
US8278193B2
(en)
|
2008-10-30 |
2012-10-02 |
Soitec |
Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same
|
US8637383B2
(en)
|
2010-12-23 |
2014-01-28 |
Soitec |
Strain relaxation using metal materials and related structures
|
WO2010148398A2
(en)
*
|
2009-06-19 |
2010-12-23 |
The Regents Of The University Of Michigan |
A thin-film device and method of fabricating the same
|
JP5766457B2
(ja)
|
2011-02-09 |
2015-08-19 |
太陽誘電株式会社 |
弾性波デバイス及びその製造方法
|
US8735219B2
(en)
|
2012-08-30 |
2014-05-27 |
Ziptronix, Inc. |
Heterogeneous annealing method and device
|
CN104272592B
(zh)
*
|
2013-03-27 |
2016-12-07 |
日本碍子株式会社 |
复合基板及弹性波装置
|
FR3033462B1
(fr)
|
2015-03-04 |
2018-03-30 |
Commissariat A L'energie Atomique Et Aux Energies Alternatives |
Dispositif a ondes elastiques de surface comprenant un film piezoelectrique monocristallin et un substrat cristallin, a faibles coefficients viscoelastiques
|
US10381998B2
(en)
|
2015-07-28 |
2019-08-13 |
Qorvo Us, Inc. |
Methods for fabrication of bonded wafers and surface acoustic wave devices using same
|
US10536133B2
(en)
|
2016-04-22 |
2020-01-14 |
Avago Technologies International Sales Pte. Limited |
Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses
|
US10090822B2
(en)
*
|
2015-08-25 |
2018-10-02 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Surface acoustic wave (SAW) resonator
|
US20170063330A1
(en)
*
|
2015-08-25 |
2017-03-02 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Surface acoustic wave (saw) resonator
|
US10177734B2
(en)
|
2015-08-25 |
2019-01-08 |
Avago Technologies International Sales Pte. Limited |
Surface acoustic wave (SAW) resonator
|
US10469056B2
(en)
|
2015-08-25 |
2019-11-05 |
Avago Technologies International Sales Pte. Limited |
Acoustic filters integrated into single die
|
US9991870B2
(en)
|
2015-08-25 |
2018-06-05 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Surface acoustic wave (SAW) resonator
|
US10523178B2
(en)
*
|
2015-08-25 |
2019-12-31 |
Avago Technologies International Sales Pte. Limited |
Surface acoustic wave (SAW) resonator
|
US10020796B2
(en)
*
|
2015-08-25 |
2018-07-10 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Surface acoustic wave (SAW) resonator
|
FR3042648B1
(fr)
*
|
2015-10-20 |
2018-09-07 |
Soitec Silicon On Insulator |
Dispositif a ondes acoustiques de surface et procede de fabrication associe
|
US10128814B2
(en)
|
2016-01-28 |
2018-11-13 |
Qorvo Us, Inc. |
Guided surface acoustic wave device providing spurious mode rejection
|
US10177735B2
(en)
|
2016-02-29 |
2019-01-08 |
Avago Technologies International Sales Pte. Limited |
Surface acoustic wave (SAW) resonator
|
CN105997058A
(zh)
*
|
2016-05-28 |
2016-10-12 |
惠州市力道电子材料有限公司 |
一种聚合物柔性叉指电极及其加工方法
|
JP6250856B1
(ja)
*
|
2016-07-20 |
2017-12-20 |
信越化学工業株式会社 |
表面弾性波デバイス用複合基板及びその製造方法とこの複合基板を用いた表面弾性波デバイス
|
CN107317560B
(zh)
*
|
2017-05-11 |
2021-01-05 |
华南理工大学 |
一种温度补偿表面声波器件及其制备方法
|
US10536131B2
(en)
|
2017-06-20 |
2020-01-14 |
Skyworks Solutions, Inc. |
Surface acoustic wave device with thermally conductive layer
|
JP7224094B2
(ja)
|
2017-06-26 |
2023-02-17 |
太陽誘電株式会社 |
弾性波共振器、フィルタおよびマルチプレクサ
|
CN107493086B
(zh)
*
|
2017-09-04 |
2023-08-15 |
杭州左蓝微电子技术有限公司 |
温度补偿声表面波谐振器及其制备方法
|
KR102222096B1
(ko)
|
2017-09-15 |
2021-03-04 |
엔지케이 인슐레이터 엘티디 |
탄성파 소자 및 그 제조 방법
|
WO2019073783A1
(ja)
|
2017-10-12 |
2019-04-18 |
住友電気工業株式会社 |
セラミック基板、積層体およびsawデバイス
|
JP7180607B2
(ja)
*
|
2017-10-12 |
2022-11-30 |
住友電気工業株式会社 |
セラミック基板、積層体およびsawデバイス
|
US11206007B2
(en)
|
2017-10-23 |
2021-12-21 |
Qorvo Us, Inc. |
Quartz orientation for guided SAW devices
|
US10790802B2
(en)
|
2018-06-15 |
2020-09-29 |
Resonant Inc. |
Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate
|
US11509279B2
(en)
|
2020-07-18 |
2022-11-22 |
Resonant Inc. |
Acoustic resonators and filters with reduced temperature coefficient of frequency
|
US11323096B2
(en)
|
2018-06-15 |
2022-05-03 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with periodic etched holes
|
US11146232B2
(en)
|
2018-06-15 |
2021-10-12 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with reduced spurious modes
|
US20220116015A1
(en)
|
2018-06-15 |
2022-04-14 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
|
US11323090B2
(en)
|
2018-06-15 |
2022-05-03 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications
|
US10756697B2
(en)
|
2018-06-15 |
2020-08-25 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator
|
US20210328574A1
(en)
|
2020-04-20 |
2021-10-21 |
Resonant Inc. |
Small transversely-excited film bulk acoustic resonators with enhanced q-factor
|
US11929731B2
(en)
|
2018-02-18 |
2024-03-12 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
|
US11936358B2
(en)
|
2020-11-11 |
2024-03-19 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator with low thermal impedance
|
US11323089B2
(en)
|
2018-06-15 |
2022-05-03 |
Resonant Inc. |
Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
|
WO2019226461A1
(en)
|
2018-05-21 |
2019-11-28 |
Skyworks Solutions, Inc. |
Multi-layer piezoelectric substrate with heat dissipation
|
US11888463B2
(en)
|
2018-06-15 |
2024-01-30 |
Murata Manufacturing Co., Ltd. |
Multi-port filter using transversely-excited film bulk acoustic resonators
|
US11146238B2
(en)
|
2018-06-15 |
2021-10-12 |
Resonant Inc. |
Film bulk acoustic resonator fabrication method
|
US11349452B2
(en)
|
2018-06-15 |
2022-05-31 |
Resonant Inc. |
Transversely-excited film bulk acoustic filters with symmetric layout
|
US11264966B2
(en)
|
2018-06-15 |
2022-03-01 |
Resonant Inc. |
Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
|
US11876498B2
(en)
|
2018-06-15 |
2024-01-16 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
|
US11949402B2
(en)
|
2020-08-31 |
2024-04-02 |
Murata Manufacturing Co., Ltd. |
Resonators with different membrane thicknesses on the same die
|
US11728785B2
(en)
|
2018-06-15 |
2023-08-15 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator using pre-formed cavities
|
US11909381B2
(en)
|
2018-06-15 |
2024-02-20 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
|
US11228296B2
(en)
|
2018-06-15 |
2022-01-18 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with a cavity having a curved perimeter
|
US11329628B2
(en)
|
2020-06-17 |
2022-05-10 |
Resonant Inc. |
Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators
|
US11374549B2
(en)
|
2018-06-15 |
2022-06-28 |
Resonant Inc. |
Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers
|
US11901878B2
(en)
|
2018-06-15 |
2024-02-13 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
|
US11870424B2
(en)
|
2018-06-15 |
2024-01-09 |
Murata Manufacturing Co., Ltd. |
Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
|
US11171629B2
(en)
|
2018-06-15 |
2021-11-09 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator using pre-formed cavities
|
US11323091B2
(en)
|
2018-06-15 |
2022-05-03 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
|
US10826462B2
(en)
|
2018-06-15 |
2020-11-03 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonators with molybdenum conductors
|
US11916539B2
(en)
|
2020-02-28 |
2024-02-27 |
Murata Manufacturing Co., Ltd. |
Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
|
US11349450B2
(en)
|
2018-06-15 |
2022-05-31 |
Resonant Inc. |
Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes
|
US11323095B2
(en)
|
2018-06-15 |
2022-05-03 |
Resonant Inc. |
Rotation in XY plane to suppress spurious modes in XBAR devices
|
US11201601B2
(en)
|
2018-06-15 |
2021-12-14 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
|
WO2020010056A1
(en)
|
2018-07-03 |
2020-01-09 |
Invensas Bonding Technologies, Inc. |
Techniques for joining dissimilar materials in microelectronics
|
JP7118844B2
(ja)
*
|
2018-10-03 |
2022-08-16 |
株式会社日本製鋼所 |
光変調器、光変調器用基板、光変調器の製造方法及び光変調器用基板の製造方法
|
US11901873B2
(en)
|
2019-03-14 |
2024-02-13 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator with partial BRAGG reflectors
|
WO2020186261A1
(en)
*
|
2019-03-14 |
2020-09-17 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
|
US11664780B2
(en)
|
2019-05-14 |
2023-05-30 |
Skyworks Solutions, Inc. |
Rayleigh mode surface acoustic wave resonator
|
US20210111688A1
(en)
*
|
2019-10-10 |
2021-04-15 |
Skyworks Solutions, Inc. |
Surface acoustic wave device with multi-layer piezoelectric substrate
|
US20210273629A1
(en)
|
2020-02-28 |
2021-09-02 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer
|
US11469733B2
(en)
|
2020-05-06 |
2022-10-11 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonators with interdigital transducer configured to reduce diaphragm stress
|
US11482981B2
(en)
|
2020-07-09 |
2022-10-25 |
Resonanat Inc. |
Transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate
|
US11264969B1
(en)
|
2020-08-06 |
2022-03-01 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator comprising small cells
|
US11671070B2
(en)
|
2020-08-19 |
2023-06-06 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonators using multiple dielectric layer thicknesses to suppress spurious modes
|
US11271539B1
(en)
|
2020-08-19 |
2022-03-08 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator with tether-supported diaphragm
|
US11894835B2
(en)
|
2020-09-21 |
2024-02-06 |
Murata Manufacturing Co., Ltd. |
Sandwiched XBAR for third harmonic operation
|
US11929733B2
(en)
|
2020-10-05 |
2024-03-12 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements
|
US11658639B2
(en)
|
2020-10-05 |
2023-05-23 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband
|
US11405017B2
(en)
|
2020-10-05 |
2022-08-02 |
Resonant Inc. |
Acoustic matrix filters and radios using acoustic matrix filters
|
US11476834B2
(en)
|
2020-10-05 |
2022-10-18 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors
|
US11728784B2
(en)
|
2020-10-05 |
2023-08-15 |
Murata Manufacturing Co., Ltd. |
Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters
|
US11405020B2
(en)
|
2020-11-26 |
2022-08-02 |
Resonant Inc. |
Transversely-excited film bulk acoustic resonators with structures to reduce acoustic energy leakage
|
US11239816B1
(en)
|
2021-01-15 |
2022-02-01 |
Resonant Inc. |
Decoupled transversely-excited film bulk acoustic resonators
|