DE69413280D1 - Akustische Oberflächenwellenanordnung mit laminierter Struktur - Google Patents

Akustische Oberflächenwellenanordnung mit laminierter Struktur

Info

Publication number
DE69413280D1
DE69413280D1 DE69413280T DE69413280T DE69413280D1 DE 69413280 D1 DE69413280 D1 DE 69413280D1 DE 69413280 T DE69413280 T DE 69413280T DE 69413280 T DE69413280 T DE 69413280T DE 69413280 D1 DE69413280 D1 DE 69413280D1
Authority
DE
Germany
Prior art keywords
laminated structure
surface wave
acoustic surface
wave arrangement
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413280T
Other languages
English (en)
Other versions
DE69413280T2 (de
Inventor
Kazuo Eda
Yutaka Taguchi
Keiji Onishi
Shun-Ichi Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69413280D1 publication Critical patent/DE69413280D1/de
Publication of DE69413280T2 publication Critical patent/DE69413280T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02834Means for compensation or elimination of undesirable effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
DE69413280T 1993-03-15 1994-03-15 Akustische Oberflächenwellenanordnung mit laminierter Struktur Expired - Lifetime DE69413280T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5343193 1993-03-15

Publications (2)

Publication Number Publication Date
DE69413280D1 true DE69413280D1 (de) 1998-10-22
DE69413280T2 DE69413280T2 (de) 1999-04-22

Family

ID=12942660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413280T Expired - Lifetime DE69413280T2 (de) 1993-03-15 1994-03-15 Akustische Oberflächenwellenanordnung mit laminierter Struktur

Country Status (3)

Country Link
US (1) US5446330A (de)
EP (1) EP0616426B1 (de)
DE (1) DE69413280T2 (de)

Families Citing this family (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747857A (en) * 1991-03-13 1998-05-05 Matsushita Electric Industrial Co., Ltd. Electronic components having high-frequency elements and methods of manufacture therefor
EP0666983B1 (de) * 1992-04-30 1997-02-12 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Sensor mit hoher empfindlichkeit
EP0622897B1 (de) * 1993-04-28 2001-03-07 Matsushita Electric Industrial Co., Ltd. Akustische Oberflächenwellenanordnung und Herstellungsverfahren dafür
JP3171043B2 (ja) * 1995-01-11 2001-05-28 株式会社村田製作所 弾性表面波装置
JP3358688B2 (ja) * 1995-04-10 2002-12-24 三洋電機株式会社 弾性表面波素子
DE69609559T2 (de) * 1995-05-08 2001-04-19 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Verbundsubstrats und eine dieses Substrat benutzende piezoelektrischer Anordnung
US5759753A (en) * 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
JP3168925B2 (ja) * 1995-11-21 2001-05-21 株式会社村田製作所 表面波装置
JPH09199974A (ja) * 1996-01-19 1997-07-31 Nec Corp 弾性表面波装置
TW330341B (en) * 1996-01-19 1998-04-21 Murada Seisakusho Kk Metallic thin film and method of manufacturing the same and surface acoustic wave device using the metallic thin film and the same thereof
US5760524A (en) * 1996-09-03 1998-06-02 Motorola, Inc. SAW device and method for forming same
US5994821A (en) * 1996-11-29 1999-11-30 Matsushita Electric Industrial Co., Ltd. Displacement control actuator
US6127768A (en) * 1997-05-09 2000-10-03 Kobe Steel Usa, Inc. Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device
JP3880150B2 (ja) * 1997-06-02 2007-02-14 松下電器産業株式会社 弾性表面波素子
JP3376355B2 (ja) * 1997-07-18 2003-02-10 株式会社東芝 弾性表面波フィルタ
JPH11136083A (ja) * 1997-08-27 1999-05-21 Murata Mfg Co Ltd 表面波装置
JPH11205071A (ja) 1998-01-13 1999-07-30 Murata Mfg Co Ltd 弾性表面波装置
JP3717034B2 (ja) 1998-11-10 2005-11-16 株式会社村田製作所 弾性表面波素子
US6236141B1 (en) 1998-12-14 2001-05-22 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave element
FR2788176B1 (fr) * 1998-12-30 2001-05-25 Thomson Csf Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication
JP2000212754A (ja) * 1999-01-22 2000-08-02 Sony Corp めっき方法及びその装置、並びにめっき構造
JP2000269779A (ja) * 1999-03-18 2000-09-29 Shin Etsu Chem Co Ltd 弾性表面波又は疑似弾性表面波デバイス用圧電性単結晶ウェーハ及びその製造方法
DE19925800C1 (de) * 1999-06-03 2000-12-21 Dresden Ev Inst Festkoerper Wandler für akustische Oberflächenwellen
US6426583B1 (en) * 1999-06-14 2002-07-30 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave element, method for producing the same and surface acoustic wave device using the same
US6627965B1 (en) 2000-02-08 2003-09-30 Boston Microsystems, Inc. Micromechanical device with an epitaxial layer
US6953977B2 (en) * 2000-02-08 2005-10-11 Boston Microsystems, Inc. Micromechanical piezoelectric device
JP2001249606A (ja) 2000-03-02 2001-09-14 Sony Corp ホログラムプリントシステム及びホログラムプリント方法、並びに撮影装置
US20040060257A1 (en) * 2000-06-19 2004-04-01 Frank Venegas Stanchion covers
US6555451B1 (en) 2001-09-28 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method for making shallow diffusion junctions in semiconductors using elemental doping
US6593212B1 (en) 2001-10-29 2003-07-15 The United States Of America As Represented By The Secretary Of The Navy Method for making electro-optical devices using a hydrogenion splitting technique
US8470019B1 (en) * 2001-11-30 2013-06-25 Advanced Cardiovascular Systems, Inc. TiNxOy modified surface for an implantable device and a method of producing the same
TWI282660B (en) * 2001-12-27 2007-06-11 Murata Manufacturing Co Surface acoustic wave device and manufacturing method therefor
US6562127B1 (en) 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
US6607969B1 (en) 2002-03-18 2003-08-19 The United States Of America As Represented By The Secretary Of The Navy Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
US6767749B2 (en) 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
US7105980B2 (en) * 2002-07-03 2006-09-12 Sawtek, Inc. Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics
US7191787B1 (en) 2003-02-03 2007-03-20 Lam Research Corporation Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid
US7237564B1 (en) * 2003-02-20 2007-07-03 Lam Research Corporation Distribution of energy in a high frequency resonating wafer processing system
DE10329866B4 (de) * 2003-07-02 2013-10-31 Epcos Ag Piezoelektrisches Substrat mit Temperaturkompensation und Verfahren zur Herstellung eines SAW-Bauelements
JP2005057425A (ja) * 2003-08-01 2005-03-03 Seiko Epson Corp 発振回路及びこれを使用した無線通信装置
US7309943B2 (en) * 2003-09-08 2007-12-18 New Scale Technologies, Inc. Mechanism comprised of ultrasonic lead screw motor
US7170214B2 (en) * 2003-09-08 2007-01-30 New Scale Technologies, Inc. Mechanism comprised of ultrasonic lead screw motor
US6940209B2 (en) 2003-09-08 2005-09-06 New Scale Technologies Ultrasonic lead screw motor
JP2005176152A (ja) * 2003-12-15 2005-06-30 Alps Electric Co Ltd 弾性表面波素子及びその製造方法
DE102004045181B4 (de) 2004-09-17 2016-02-04 Epcos Ag SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung
JP4359551B2 (ja) * 2004-10-08 2009-11-04 アルプス電気株式会社 弾性表面波素子の製造方法
US6938905B1 (en) 2004-11-05 2005-09-06 Haiming Tsai Hand truck
US7619347B1 (en) 2005-05-24 2009-11-17 Rf Micro Devices, Inc. Layer acoustic wave device and method of making the same
JP2007243918A (ja) * 2006-02-08 2007-09-20 Seiko Epson Corp 弾性表面波素子および電子機器
US8490260B1 (en) 2007-01-17 2013-07-23 Rf Micro Devices, Inc. Method of manufacturing SAW device substrates
US7408286B1 (en) * 2007-01-17 2008-08-05 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
JP4316632B2 (ja) * 2007-04-16 2009-08-19 富士通メディアデバイス株式会社 弾性表面波装置及び分波器
US8115365B2 (en) * 2008-04-15 2012-02-14 Ngk Insulators, Ltd. Surface acoustic wave devices
US7911111B2 (en) * 2008-04-15 2011-03-22 Ngk Insulators, Ltd. Surface acoustic wave devices
JP2010068503A (ja) * 2008-08-13 2010-03-25 Seiko Epson Corp 弾性表面波素子
JP2012514316A (ja) * 2008-09-24 2012-06-21 エス・オー・アイ・テック・シリコン・オン・インシュレーター・テクノロジーズ 半導体材料、半導体構造、デバイスおよびそれらを含む加工された基板の緩和した層を形成する方法
US8278193B2 (en) 2008-10-30 2012-10-02 Soitec Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including same
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
WO2010148398A2 (en) * 2009-06-19 2010-12-23 The Regents Of The University Of Michigan A thin-film device and method of fabricating the same
JP5766457B2 (ja) 2011-02-09 2015-08-19 太陽誘電株式会社 弾性波デバイス及びその製造方法
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
CN104272592B (zh) * 2013-03-27 2016-12-07 日本碍子株式会社 复合基板及弹性波装置
FR3033462B1 (fr) 2015-03-04 2018-03-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a ondes elastiques de surface comprenant un film piezoelectrique monocristallin et un substrat cristallin, a faibles coefficients viscoelastiques
US10381998B2 (en) 2015-07-28 2019-08-13 Qorvo Us, Inc. Methods for fabrication of bonded wafers and surface acoustic wave devices using same
US10536133B2 (en) 2016-04-22 2020-01-14 Avago Technologies International Sales Pte. Limited Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses
US10090822B2 (en) * 2015-08-25 2018-10-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (SAW) resonator
US20170063330A1 (en) * 2015-08-25 2017-03-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (saw) resonator
US10177734B2 (en) 2015-08-25 2019-01-08 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10469056B2 (en) 2015-08-25 2019-11-05 Avago Technologies International Sales Pte. Limited Acoustic filters integrated into single die
US9991870B2 (en) 2015-08-25 2018-06-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (SAW) resonator
US10523178B2 (en) * 2015-08-25 2019-12-31 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
US10020796B2 (en) * 2015-08-25 2018-07-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface acoustic wave (SAW) resonator
FR3042648B1 (fr) * 2015-10-20 2018-09-07 Soitec Silicon On Insulator Dispositif a ondes acoustiques de surface et procede de fabrication associe
US10128814B2 (en) 2016-01-28 2018-11-13 Qorvo Us, Inc. Guided surface acoustic wave device providing spurious mode rejection
US10177735B2 (en) 2016-02-29 2019-01-08 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
CN105997058A (zh) * 2016-05-28 2016-10-12 惠州市力道电子材料有限公司 一种聚合物柔性叉指电极及其加工方法
JP6250856B1 (ja) * 2016-07-20 2017-12-20 信越化学工業株式会社 表面弾性波デバイス用複合基板及びその製造方法とこの複合基板を用いた表面弾性波デバイス
CN107317560B (zh) * 2017-05-11 2021-01-05 华南理工大学 一种温度补偿表面声波器件及其制备方法
US10536131B2 (en) 2017-06-20 2020-01-14 Skyworks Solutions, Inc. Surface acoustic wave device with thermally conductive layer
JP7224094B2 (ja) 2017-06-26 2023-02-17 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
CN107493086B (zh) * 2017-09-04 2023-08-15 杭州左蓝微电子技术有限公司 温度补偿声表面波谐振器及其制备方法
KR102222096B1 (ko) 2017-09-15 2021-03-04 엔지케이 인슐레이터 엘티디 탄성파 소자 및 그 제조 방법
WO2019073783A1 (ja) 2017-10-12 2019-04-18 住友電気工業株式会社 セラミック基板、積層体およびsawデバイス
JP7180607B2 (ja) * 2017-10-12 2022-11-30 住友電気工業株式会社 セラミック基板、積層体およびsawデバイス
US11206007B2 (en) 2017-10-23 2021-12-21 Qorvo Us, Inc. Quartz orientation for guided SAW devices
US10790802B2 (en) 2018-06-15 2020-09-29 Resonant Inc. Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate
US11509279B2 (en) 2020-07-18 2022-11-22 Resonant Inc. Acoustic resonators and filters with reduced temperature coefficient of frequency
US11323096B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with periodic etched holes
US11146232B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Transversely-excited film bulk acoustic resonator with reduced spurious modes
US20220116015A1 (en) 2018-06-15 2022-04-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch
US11323090B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications
US10756697B2 (en) 2018-06-15 2020-08-25 Resonant Inc. Transversely-excited film bulk acoustic resonator
US20210328574A1 (en) 2020-04-20 2021-10-21 Resonant Inc. Small transversely-excited film bulk acoustic resonators with enhanced q-factor
US11929731B2 (en) 2018-02-18 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch
US11936358B2 (en) 2020-11-11 2024-03-19 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with low thermal impedance
US11323089B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
WO2019226461A1 (en) 2018-05-21 2019-11-28 Skyworks Solutions, Inc. Multi-layer piezoelectric substrate with heat dissipation
US11888463B2 (en) 2018-06-15 2024-01-30 Murata Manufacturing Co., Ltd. Multi-port filter using transversely-excited film bulk acoustic resonators
US11146238B2 (en) 2018-06-15 2021-10-12 Resonant Inc. Film bulk acoustic resonator fabrication method
US11349452B2 (en) 2018-06-15 2022-05-31 Resonant Inc. Transversely-excited film bulk acoustic filters with symmetric layout
US11264966B2 (en) 2018-06-15 2022-03-01 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack
US11876498B2 (en) 2018-06-15 2024-01-16 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
US11949402B2 (en) 2020-08-31 2024-04-02 Murata Manufacturing Co., Ltd. Resonators with different membrane thicknesses on the same die
US11728785B2 (en) 2018-06-15 2023-08-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator using pre-formed cavities
US11909381B2 (en) 2018-06-15 2024-02-20 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer
US11228296B2 (en) 2018-06-15 2022-01-18 Resonant Inc. Transversely-excited film bulk acoustic resonator with a cavity having a curved perimeter
US11329628B2 (en) 2020-06-17 2022-05-10 Resonant Inc. Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators
US11374549B2 (en) 2018-06-15 2022-06-28 Resonant Inc. Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers
US11901878B2 (en) 2018-06-15 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer
US11870424B2 (en) 2018-06-15 2024-01-09 Murata Manufacturing Co., Ltd. Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
US11171629B2 (en) 2018-06-15 2021-11-09 Resonant Inc. Transversely-excited film bulk acoustic resonator using pre-formed cavities
US11323091B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Transversely-excited film bulk acoustic resonator with diaphragm support pedestals
US10826462B2 (en) 2018-06-15 2020-11-03 Resonant Inc. Transversely-excited film bulk acoustic resonators with molybdenum conductors
US11916539B2 (en) 2020-02-28 2024-02-27 Murata Manufacturing Co., Ltd. Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators
US11349450B2 (en) 2018-06-15 2022-05-31 Resonant Inc. Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes
US11323095B2 (en) 2018-06-15 2022-05-03 Resonant Inc. Rotation in XY plane to suppress spurious modes in XBAR devices
US11201601B2 (en) 2018-06-15 2021-12-14 Resonant Inc. Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method
WO2020010056A1 (en) 2018-07-03 2020-01-09 Invensas Bonding Technologies, Inc. Techniques for joining dissimilar materials in microelectronics
JP7118844B2 (ja) * 2018-10-03 2022-08-16 株式会社日本製鋼所 光変調器、光変調器用基板、光変調器の製造方法及び光変調器用基板の製造方法
US11901873B2 (en) 2019-03-14 2024-02-13 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator with partial BRAGG reflectors
WO2020186261A1 (en) * 2019-03-14 2020-09-17 Resonant Inc. Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer
US11664780B2 (en) 2019-05-14 2023-05-30 Skyworks Solutions, Inc. Rayleigh mode surface acoustic wave resonator
US20210111688A1 (en) * 2019-10-10 2021-04-15 Skyworks Solutions, Inc. Surface acoustic wave device with multi-layer piezoelectric substrate
US20210273629A1 (en) 2020-02-28 2021-09-02 Resonant Inc. Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer
US11469733B2 (en) 2020-05-06 2022-10-11 Resonant Inc. Transversely-excited film bulk acoustic resonators with interdigital transducer configured to reduce diaphragm stress
US11482981B2 (en) 2020-07-09 2022-10-25 Resonanat Inc. Transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate
US11264969B1 (en) 2020-08-06 2022-03-01 Resonant Inc. Transversely-excited film bulk acoustic resonator comprising small cells
US11671070B2 (en) 2020-08-19 2023-06-06 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonators using multiple dielectric layer thicknesses to suppress spurious modes
US11271539B1 (en) 2020-08-19 2022-03-08 Resonant Inc. Transversely-excited film bulk acoustic resonator with tether-supported diaphragm
US11894835B2 (en) 2020-09-21 2024-02-06 Murata Manufacturing Co., Ltd. Sandwiched XBAR for third harmonic operation
US11929733B2 (en) 2020-10-05 2024-03-12 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements
US11658639B2 (en) 2020-10-05 2023-05-23 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband
US11405017B2 (en) 2020-10-05 2022-08-02 Resonant Inc. Acoustic matrix filters and radios using acoustic matrix filters
US11476834B2 (en) 2020-10-05 2022-10-18 Resonant Inc. Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors
US11728784B2 (en) 2020-10-05 2023-08-15 Murata Manufacturing Co., Ltd. Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters
US11405020B2 (en) 2020-11-26 2022-08-02 Resonant Inc. Transversely-excited film bulk acoustic resonators with structures to reduce acoustic energy leakage
US11239816B1 (en) 2021-01-15 2022-02-01 Resonant Inc. Decoupled transversely-excited film bulk acoustic resonators

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037176A (en) * 1975-03-18 1977-07-19 Matsushita Electric Industrial Co., Ltd. Multi-layered substrate for a surface-acoustic-wave device
GB1565756A (en) * 1976-09-30 1980-04-23 Toko Inc Surface elastic wave devices
JPS5627985A (en) * 1979-08-14 1981-03-18 Sanyo Electric Co Ltd Manufacture of surface elastic wave piezoelectric substrate
JPS56149109A (en) * 1980-04-19 1981-11-18 Fujitsu Ltd Elastic surface wave device
JPS57145419A (en) * 1981-03-05 1982-09-08 Clarion Co Ltd Surface acoustic wave element
JPS5964908A (ja) * 1982-10-05 1984-04-13 Nobuo Mikoshiba 弾性表面波素子
JPS6192021A (ja) * 1984-10-11 1986-05-10 Matsushita Electric Ind Co Ltd 弾性表面波素子
US4868444A (en) * 1987-10-19 1989-09-19 Sanyo Electric Co., Ltd. Surface acoustic wave device
JPH04358410A (ja) * 1991-06-05 1992-12-11 Sumitomo Electric Ind Ltd 表面弾性波素子及びその製造方法
EP0816879A1 (de) * 1992-07-08 1998-01-07 Matsushita Electric Industrial Co., Ltd. Optischer Wellenleiter und dessen Herstellungsverfahren

Also Published As

Publication number Publication date
US5446330A (en) 1995-08-29
EP0616426B1 (de) 1998-09-16
EP0616426A1 (de) 1994-09-21
DE69413280T2 (de) 1999-04-22

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