DE69407603D1 - Oberflächenemittierende laservorrichtung mit einem vertikalen resonator - Google Patents
Oberflächenemittierende laservorrichtung mit einem vertikalen resonatorInfo
- Publication number
- DE69407603D1 DE69407603D1 DE69407603T DE69407603T DE69407603D1 DE 69407603 D1 DE69407603 D1 DE 69407603D1 DE 69407603 T DE69407603 T DE 69407603T DE 69407603 T DE69407603 T DE 69407603T DE 69407603 D1 DE69407603 D1 DE 69407603D1
- Authority
- DE
- Germany
- Prior art keywords
- laser device
- emitting laser
- vertical resonator
- resonator
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9302950A SE501722C2 (sv) | 1993-09-10 | 1993-09-10 | Ytemitterande laseranordning med vertikal kavitet |
PCT/SE1994/000803 WO1995007566A1 (en) | 1993-09-10 | 1994-09-01 | Surface emitting laser device with a vertical cavity |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69407603D1 true DE69407603D1 (de) | 1998-02-05 |
DE69407603T2 DE69407603T2 (de) | 1998-04-09 |
Family
ID=20391056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69407603T Expired - Lifetime DE69407603T2 (de) | 1993-09-10 | 1994-09-01 | Oberflächenemittierende laservorrichtung mit einem vertikalen resonator |
Country Status (7)
Country | Link |
---|---|
US (1) | US5781575A (de) |
EP (1) | EP0717883B1 (de) |
JP (1) | JPH09502571A (de) |
CA (1) | CA2169442A1 (de) |
DE (1) | DE69407603T2 (de) |
SE (1) | SE501722C2 (de) |
WO (1) | WO1995007566A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
FR2761537B1 (fr) * | 1997-04-01 | 1999-06-11 | Thomson Csf | Laser comprenant un empilement de diodes laser epitaxiees compris entre deux miroirs de bragg |
EP1051783B1 (de) * | 1998-01-30 | 2002-01-09 | Osram Opto Semiconductors GmbH & Co. OHG | Halbleiterlaser-chip |
DE19954093A1 (de) * | 1999-11-10 | 2001-05-23 | Infineon Technologies Ag | Anordnung für Hochleistungslaser |
US6816525B2 (en) | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
US7065124B2 (en) * | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
WO2002071562A2 (en) * | 2001-03-02 | 2002-09-12 | Science & Technology Corporation @ Unm | Quantum dot vertical cavity surface emitting laser |
DE10147353C2 (de) * | 2001-09-26 | 2003-12-18 | Infineon Technologies Ag | Halbleiterlaser mit mindestens zwei optisch aktiven Bereichen |
US6965626B2 (en) * | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
DE10251824A1 (de) * | 2002-11-01 | 2004-05-19 | Technische Universität Dresden | Optoelektronisches Bauelement zur Erzeugung kohärenter Strahlung im Terahertz-Frequenzbereich |
US6813293B2 (en) * | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
US20040222363A1 (en) * | 2003-05-07 | 2004-11-11 | Honeywell International Inc. | Connectorized optical component misalignment detection system |
US20040247250A1 (en) * | 2003-06-03 | 2004-12-09 | Honeywell International Inc. | Integrated sleeve pluggable package |
US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
US7277461B2 (en) * | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
US7075962B2 (en) * | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
US20060056762A1 (en) * | 2003-07-02 | 2006-03-16 | Honeywell International Inc. | Lens optical coupler |
US7210857B2 (en) * | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
US20050013542A1 (en) * | 2003-07-16 | 2005-01-20 | Honeywell International Inc. | Coupler having reduction of reflections to light source |
US20050013539A1 (en) * | 2003-07-17 | 2005-01-20 | Honeywell International Inc. | Optical coupling system |
US6887801B2 (en) * | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
US7282732B2 (en) * | 2003-10-24 | 2007-10-16 | Stc. Unm | Quantum dot structures |
US7031363B2 (en) * | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
US20070130153A1 (en) * | 2005-12-02 | 2007-06-07 | Palm, Inc. | Techniques to communicate and process location information from communications networks on a mobile computing device |
DE102006010728A1 (de) * | 2005-12-05 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Laservorrichtung |
US20170256915A1 (en) * | 2016-03-04 | 2017-09-07 | Princeton Optronics, Inc. | High-Speed VCSEL Device |
US20210194216A1 (en) * | 2019-12-24 | 2021-06-24 | Array Photonics, Inc. | Stacked semiconductor lasers with controlled spectral emission |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316156A (en) * | 1979-07-12 | 1982-02-16 | Xerox Corporation | Optical repeater integrated lasers |
JPS59104189A (ja) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザ |
US4602370A (en) * | 1983-05-12 | 1986-07-22 | At&T Bell Laboratories | Large optical cavity laser having a plurality of active layers |
US4719630A (en) * | 1986-03-24 | 1988-01-12 | Xerox Corporation | Phased array semiconductor lasers with uniform and stable supermode |
US4817103A (en) * | 1986-10-06 | 1989-03-28 | University Of Illinois | Semiconductor light emitting device with stacked active regions |
JPS6395682A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | 端面発光素子 |
DE8806828U1 (de) * | 1988-05-25 | 1988-09-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen, De | |
JPH02144983A (ja) * | 1988-11-25 | 1990-06-04 | Agency Of Ind Science & Technol | 複数の活性層を有する半導体レーザ装置 |
US4916712A (en) * | 1989-07-27 | 1990-04-10 | Mcdonnell Douglas Corporation | Optically pumped slab laser |
JPH03124067A (ja) * | 1989-10-07 | 1991-05-27 | Showa Shell Sekiyu Kk | 光起電力装置およびその製造方法 |
US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
US5052016A (en) * | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
US5181219A (en) * | 1990-09-12 | 1993-01-19 | Seiko Epson Corporation | Surface emission type semiconductor laser |
US5212706A (en) * | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
-
1993
- 1993-09-10 SE SE9302950A patent/SE501722C2/sv not_active IP Right Cessation
-
1994
- 1994-09-01 JP JP7508625A patent/JPH09502571A/ja active Pending
- 1994-09-01 WO PCT/SE1994/000803 patent/WO1995007566A1/en active IP Right Grant
- 1994-09-01 CA CA002169442A patent/CA2169442A1/en not_active Abandoned
- 1994-09-01 DE DE69407603T patent/DE69407603T2/de not_active Expired - Lifetime
- 1994-09-01 EP EP94926435A patent/EP0717883B1/de not_active Expired - Lifetime
-
1997
- 1997-01-02 US US08/775,886 patent/US5781575A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5781575A (en) | 1998-07-14 |
SE9302950D0 (sv) | 1993-09-10 |
DE69407603T2 (de) | 1998-04-09 |
EP0717883A1 (de) | 1996-06-26 |
WO1995007566A1 (en) | 1995-03-16 |
EP0717883B1 (de) | 1997-12-29 |
SE9302950L (sv) | 1995-03-11 |
JPH09502571A (ja) | 1997-03-11 |
SE501722C2 (sv) | 1995-05-02 |
CA2169442A1 (en) | 1995-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |