DE69128994T2 - Verfahren zur Erzeugung mikroskopischer Strukturen - Google Patents

Verfahren zur Erzeugung mikroskopischer Strukturen

Info

Publication number
DE69128994T2
DE69128994T2 DE69128994T DE69128994T DE69128994T2 DE 69128994 T2 DE69128994 T2 DE 69128994T2 DE 69128994 T DE69128994 T DE 69128994T DE 69128994 T DE69128994 T DE 69128994T DE 69128994 T2 DE69128994 T2 DE 69128994T2
Authority
DE
Germany
Prior art keywords
microscopic structures
creating microscopic
creating
structures
microscopic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128994T
Other languages
English (en)
Other versions
DE69128994D1 (de
Inventor
Narito Shibaike
Michiyoshi Nagashima
Fumiaki Ueno
Toshinori Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69128994D1 publication Critical patent/DE69128994D1/de
Publication of DE69128994T2 publication Critical patent/DE69128994T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
DE69128994T 1990-09-17 1991-09-10 Verfahren zur Erzeugung mikroskopischer Strukturen Expired - Fee Related DE69128994T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2247713A JP2932650B2 (ja) 1990-09-17 1990-09-17 微細構造物の製造方法

Publications (2)

Publication Number Publication Date
DE69128994D1 DE69128994D1 (de) 1998-04-09
DE69128994T2 true DE69128994T2 (de) 1998-07-02

Family

ID=17167562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128994T Expired - Fee Related DE69128994T2 (de) 1990-09-17 1991-09-10 Verfahren zur Erzeugung mikroskopischer Strukturen

Country Status (4)

Country Link
US (1) US5350499A (de)
EP (1) EP0476479B1 (de)
JP (1) JP2932650B2 (de)
DE (1) DE69128994T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011103677B4 (de) * 2010-11-05 2017-10-05 Hitachi High-Technologies Corporation Ionenätzvorrichtung

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JPH0613013A (ja) * 1992-06-29 1994-01-21 Sumitomo Electric Ind Ltd イオンビームを集束して加工を行う装置
CA2097388A1 (en) * 1992-07-16 1994-01-17 Susan Nord Bohlke Topographical selective patterns
US5705318A (en) * 1994-06-06 1998-01-06 Case Western Reserve University Micromotors and methods of fabrication
US6360424B1 (en) 1994-06-06 2002-03-26 Case Western Reserve University Method of making micromotors with utilitarian features
US6029337A (en) * 1994-06-06 2000-02-29 Case Western Reserve University Methods of fabricating micromotors with utilitarian features
US5788468A (en) * 1994-11-03 1998-08-04 Memstek Products, Llc Microfabricated fluidic devices
EP0732624B1 (de) * 1995-03-17 2001-10-10 Ebara Corporation Herstellungsverfahren mit einem Energiebündel
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5688383A (en) * 1996-02-22 1997-11-18 E. I. Du Pont De Nemours And Company Method for improving the performance of high temperature superconducting thin film wafers
US5656535A (en) * 1996-03-04 1997-08-12 Siemens Aktiengesellschaft Storage node process for deep trench-based DRAM
US5867266A (en) 1996-04-17 1999-02-02 Cornell Research Foundation, Inc. Multiple optical channels for chemical analysis
US6115634A (en) * 1997-04-30 2000-09-05 Medtronic, Inc. Implantable medical device and method of manufacture
US5925261A (en) * 1997-05-21 1999-07-20 Seagate Technology, Inc. Method for fabricating a taper on a recording head slider
EP1209737B2 (de) * 2000-11-06 2014-04-30 Hitachi, Ltd. Verfahren zur Herstellung von Proben
EP1436601B1 (de) * 2001-05-23 2014-10-01 Omniprobe, Inc. Verfahren zur probentrennung und probenaushebung
DE10234614B3 (de) * 2002-07-24 2004-03-04 Fractal Ag Verfahren zur Bearbeitung von Trägermaterial durch Schwerionenbestrahlung und nachfolgenden Ätzprozess
JP4557130B2 (ja) * 2003-09-16 2010-10-06 日本電子株式会社 試料作製装置
KR100529632B1 (ko) * 2003-10-01 2005-11-17 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
JP4486462B2 (ja) * 2004-09-29 2010-06-23 日本電子株式会社 試料作製方法および試料作製装置
JP4952474B2 (ja) * 2007-09-20 2012-06-13 住友電気工業株式会社 断面観察試料の作製方法
DE102008015333B4 (de) * 2008-03-20 2021-05-12 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Nanodraht-Strukturelement, Verfahren zu dessen Herstellung, Mikroreaktorsystem und Katalysatorsystem
US7883607B2 (en) * 2008-08-19 2011-02-08 International Business Machines Corporation Methods of ion milling for magnetic heads and systems formed thereby
WO2013189919A1 (en) * 2012-06-18 2013-12-27 Gapwaves Ab Gap waveguide structures for thz applications
JP6028110B2 (ja) * 2013-12-25 2016-11-16 キヤノンアネルバ株式会社 基板加工方法及び半導体装置の製造方法
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US9536748B2 (en) * 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
US10008384B2 (en) * 2015-06-25 2018-06-26 Varian Semiconductor Equipment Associates, Inc. Techniques to engineer nanoscale patterned features using ions
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US10229832B2 (en) * 2016-09-22 2019-03-12 Varian Semiconductor Equipment Associates, Inc. Techniques for forming patterned features using directional ions
US10598832B2 (en) * 2018-01-09 2020-03-24 Varian Semiconductor Equipment Associates, Inc. System and method for forming diffracted optical element having varied gratings
US11757166B2 (en) 2020-11-10 2023-09-12 Aptiv Technologies Limited Surface-mount waveguide for vertical transitions of a printed circuit board
US11901601B2 (en) 2020-12-18 2024-02-13 Aptiv Technologies Limited Waveguide with a zigzag for suppressing grating lobes
US11749883B2 (en) 2020-12-18 2023-09-05 Aptiv Technologies Limited Waveguide with radiation slots and parasitic elements for asymmetrical coverage
US11444364B2 (en) 2020-12-22 2022-09-13 Aptiv Technologies Limited Folded waveguide for antenna
US11616306B2 (en) 2021-03-22 2023-03-28 Aptiv Technologies Limited Apparatus, method and system comprising an air waveguide antenna having a single layer material with air channels therein which is interfaced with a circuit board
US11962085B2 (en) 2021-05-13 2024-04-16 Aptiv Technologies AG Two-part folded waveguide having a sinusoidal shape channel including horn shape radiating slots formed therein which are spaced apart by one-half wavelength
US11616282B2 (en) 2021-08-03 2023-03-28 Aptiv Technologies Limited Transition between a single-ended port and differential ports having stubs that match with input impedances of the single-ended and differential ports

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FR2253253A1 (en) * 1973-12-04 1975-06-27 Thomson Csf Adjustable and refrigerated sample support - for charged particle appts. can be rotated and inclined
JPS5539646A (en) * 1978-09-12 1980-03-19 Nec Corp Ion taper etching
JPS56137636A (en) * 1980-03-31 1981-10-27 Toshiba Corp Ion etching method
DE3623637A1 (de) * 1986-07-12 1988-01-21 Kernforschungsz Karlsruhe Verfahren zur herstellung von mikrostrukturen unterschiedlicher strukturhoehe mittels roentgentiefenlithographie
US4869780A (en) * 1987-04-10 1989-09-26 Trw Inc. Ion milling method
DE3722881C2 (de) * 1987-07-10 1995-02-16 Kernforschungsz Karlsruhe Schaltermatrix mit optisch nichtlinearen, z.B. bistabilen, Elementen und Verfahren zur Herstellung derselben
EP0338110B1 (de) * 1988-04-21 1993-03-17 International Business Machines Corporation Verfahren zur Herstellung eines Photoresistmusters und Apparat dafür
JPH023248A (ja) * 1988-06-18 1990-01-08 Oki Electric Ind Co Ltd 半導体素子及びその製造方法
GB8821944D0 (en) * 1988-09-19 1988-10-19 Gillette Co Method & apparatus for forming surface of workpiece
JPH02108003A (ja) * 1988-10-17 1990-04-19 Mitsubishi Electric Corp １次回折格子の形成方法
US5035770A (en) * 1989-05-01 1991-07-30 Hewlett-Packard Company Methods of making surface relief gratings

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011103677B4 (de) * 2010-11-05 2017-10-05 Hitachi High-Technologies Corporation Ionenätzvorrichtung
US10008365B2 (en) 2010-11-05 2018-06-26 Hitachi High-Technologies Corporation Ion milling device
DE112011106139B3 (de) * 2010-11-05 2018-10-11 Hitachi High-Technologies Corporation Ionenätzvorrichtung
US11133153B2 (en) 2010-11-05 2021-09-28 Hitachi High-Tech Corporation Ion milling device

Also Published As

Publication number Publication date
JP2932650B2 (ja) 1999-08-09
EP0476479B1 (de) 1998-03-04
DE69128994D1 (de) 1998-04-09
JPH04128394A (ja) 1992-04-28
US5350499A (en) 1994-09-27
EP0476479A3 (en) 1992-05-06
EP0476479A2 (de) 1992-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee