DE69127054T2 - Verfahren zur Herstellung eines Musters und Projektionsbelichtungsapparat - Google Patents
Verfahren zur Herstellung eines Musters und ProjektionsbelichtungsapparatInfo
- Publication number
- DE69127054T2 DE69127054T2 DE69127054T DE69127054T DE69127054T2 DE 69127054 T2 DE69127054 T2 DE 69127054T2 DE 69127054 T DE69127054 T DE 69127054T DE 69127054 T DE69127054 T DE 69127054T DE 69127054 T2 DE69127054 T2 DE 69127054T2
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- making
- exposure apparatus
- projection exposure
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
- G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28422990 | 1990-10-24 | ||
JP1634691 | 1991-02-07 | ||
JP11012791A JP3245882B2 (ja) | 1990-10-24 | 1991-05-15 | パターン形成方法、および投影露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127054D1 DE69127054D1 (de) | 1997-09-04 |
DE69127054T2 true DE69127054T2 (de) | 1998-01-29 |
Family
ID=27281368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127054T Expired - Fee Related DE69127054T2 (de) | 1990-10-24 | 1991-09-27 | Verfahren zur Herstellung eines Musters und Projektionsbelichtungsapparat |
Country Status (5)
Country | Link |
---|---|
US (3) | US5316896A (de) |
EP (2) | EP0777147A1 (de) |
JP (1) | JP3245882B2 (de) |
KR (1) | KR100213605B1 (de) |
DE (1) | DE69127054T2 (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5436114A (en) * | 1989-12-06 | 1995-07-25 | Hitachi, Ltd. | Method of optical lithography with super resolution and projection printing apparatus |
US6020950A (en) * | 1992-02-24 | 2000-02-01 | Nikon Corporation | Exposure method and projection exposure apparatus |
US6404482B1 (en) | 1992-10-01 | 2002-06-11 | Nikon Corporation | Projection exposure method and apparatus |
US5415952A (en) * | 1992-10-05 | 1995-05-16 | Fujitsu Limited | Fine pattern lithography with positive use of interference |
US5739898A (en) * | 1993-02-03 | 1998-04-14 | Nikon Corporation | Exposure method and apparatus |
JP3291849B2 (ja) * | 1993-07-15 | 2002-06-17 | 株式会社ニコン | 露光方法、デバイス形成方法、及び露光装置 |
US5642183A (en) * | 1993-08-27 | 1997-06-24 | Sharp Kabushiki Kaisha | Spatial filter used in a reduction-type projection printing apparatus |
JP3339174B2 (ja) * | 1993-11-08 | 2002-10-28 | ソニー株式会社 | フォトマスクの製造方法、露光方法及び半導体装置の製造方法 |
KR950033689A (ko) * | 1994-03-02 | 1995-12-26 | 오노 시게오 | 노광장치 및 이를 이용한 회로패턴 형성방법 |
KR100377206B1 (ko) * | 1994-08-26 | 2003-06-09 | 소니 가부시끼 가이샤 | 패턴형성방법및이방법을이용한반도체디바이스제조방법 |
JP3297791B2 (ja) * | 1994-11-16 | 2002-07-02 | ソニー株式会社 | 露光方法およびレジストパターン算出方法 |
KR0158904B1 (ko) * | 1994-12-02 | 1999-02-01 | 김주용 | 콘택마스크 |
US5663785A (en) * | 1995-05-24 | 1997-09-02 | International Business Machines Corporation | Diffraction pupil filler modified illuminator for annular pupil fills |
US5621500A (en) * | 1995-05-25 | 1997-04-15 | Nikon Corporation | Method and apparatus for projection exposure |
JPH09199390A (ja) * | 1996-01-16 | 1997-07-31 | Hitachi Ltd | パターン形成方法、投影露光装置および半導体装置の製造方法 |
JP3431387B2 (ja) * | 1996-03-14 | 2003-07-28 | 株式会社東芝 | 露光強度分布表示方法とマスクパターン編集装置 |
EP0806707A1 (de) * | 1996-05-08 | 1997-11-12 | Texas Instruments Incorporated | Mikrolithographisches Abbildungssystem |
US5869212A (en) * | 1996-05-31 | 1999-02-09 | Kabushiki Kaisha Toshiba | Integrated circuit photofabrication masks and methods for making same |
JP3918044B2 (ja) * | 1996-11-01 | 2007-05-23 | 浜松ホトニクス株式会社 | 画像形成装置 |
KR100273234B1 (ko) * | 1997-09-30 | 2000-12-15 | 김영환 | 포토리소그래피장치 |
JP3315658B2 (ja) * | 1998-12-28 | 2002-08-19 | キヤノン株式会社 | 投影装置および露光装置 |
IL133243A0 (en) | 1999-03-30 | 2001-03-19 | Univ Ramot | A method and system for super resolution |
US6421820B1 (en) * | 1999-12-13 | 2002-07-16 | Infineon Technologies Ag | Semiconductor device fabrication using a photomask with assist features |
US6507389B1 (en) * | 2000-04-07 | 2003-01-14 | Promos Technologies, Inc. | Photolithography system having a frequency domain filtering mask |
WO2001084236A2 (en) * | 2000-04-27 | 2001-11-08 | Petersen Advanced Lithography, Inc. | Method for phase shift mask design, fabrication, and use |
DE10027984B4 (de) * | 2000-06-06 | 2008-10-23 | Promos Technologies, Inc. | Fotolithografiesystem mit einer Frequenzbereichsfiltermaske |
US6344893B1 (en) | 2000-06-19 | 2002-02-05 | Ramot University Authority For Applied Research And Industrial Development Ltd. | Super-resolving imaging system |
JP4671473B2 (ja) * | 2000-07-14 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | マスクデータ補正装置、転写用マスクの製造方法、および、パターン構造を有する装置の製造方法 |
NL1015748C2 (nl) * | 2000-07-19 | 2002-01-22 | Promos Technologies Inc | Fotolithografiesysteem met een filtermasker voor het frequentiebereik. |
IL159700A0 (en) * | 2001-07-06 | 2004-06-20 | Palantyr Res Llc | Imaging system and methodology employing reciprocal space optical design |
WO2003038518A1 (en) * | 2001-10-30 | 2003-05-08 | Pixelligent Technologies Llc | Advanced exposure techniques for programmable lithography |
CN1602451A (zh) | 2001-11-07 | 2005-03-30 | 应用材料有限公司 | 无掩膜光子电子点格栅阵列光刻机 |
CN1791839A (zh) | 2001-11-07 | 2006-06-21 | 应用材料有限公司 | 光点格栅阵列光刻机 |
US6906305B2 (en) * | 2002-01-08 | 2005-06-14 | Brion Technologies, Inc. | System and method for aerial image sensing |
US6670646B2 (en) | 2002-02-11 | 2003-12-30 | Infineon Technologies Ag | Mask and method for patterning a semiconductor wafer |
DE10218989A1 (de) * | 2002-04-24 | 2003-11-06 | Zeiss Carl Smt Ag | Projektionsverfahren und Projektionssystem mit optischer Filterung |
DE10220324A1 (de) | 2002-04-29 | 2003-11-13 | Zeiss Carl Smt Ag | Projektionsverfahren mit Pupillenfilterung und Projektionsobjektiv hierfür |
KR100866702B1 (ko) * | 2002-05-20 | 2008-11-03 | 주식회사 하이닉스반도체 | 반도체 노광장비의 유효광원 형상 추출방법 |
US6828542B2 (en) | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
US6807503B2 (en) | 2002-11-04 | 2004-10-19 | Brion Technologies, Inc. | Method and apparatus for monitoring integrated circuit fabrication |
US6759297B1 (en) | 2003-02-28 | 2004-07-06 | Union Semiconductor Technology Corporatin | Low temperature deposition of dielectric materials in magnetoresistive random access memory devices |
US7053355B2 (en) | 2003-03-18 | 2006-05-30 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
US7198873B2 (en) * | 2003-11-18 | 2007-04-03 | Asml Netherlands B.V. | Lithographic processing optimization based on hypersampled correlations |
DE102004011733A1 (de) * | 2004-03-04 | 2005-09-22 | Carl Zeiss Smt Ag | Transmissionsfiltervorrichtung |
US20050287483A1 (en) * | 2004-06-23 | 2005-12-29 | International Business Machines Corporation | Contact hole printing method and apparatus with single mask, multiple exposures, and optimized pupil filtering |
US20060183057A1 (en) * | 2005-02-11 | 2006-08-17 | Katsuhiko Mitani | Patterning method |
US7519940B2 (en) * | 2005-05-02 | 2009-04-14 | Cadence Design Systems, Inc. | Apparatus and method for compensating a lithography projection tool |
US7934172B2 (en) * | 2005-08-08 | 2011-04-26 | Micronic Laser Systems Ab | SLM lithography: printing to below K1=.30 without previous OPC processing |
WO2007018464A2 (en) * | 2005-08-08 | 2007-02-15 | Micronic Laser Systems Ab | Method and apparatus for projection printing |
US20070121090A1 (en) * | 2005-11-30 | 2007-05-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5299937B2 (ja) | 2006-05-18 | 2013-09-25 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光近接効果を補正する方法 |
US7546573B1 (en) * | 2006-06-06 | 2009-06-09 | Kla-Tencor Corporation | Semiconductor device pattern generation |
DE102008001216A1 (de) * | 2007-04-18 | 2008-10-23 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Mikrolithographie |
JP5365353B2 (ja) * | 2009-06-08 | 2013-12-11 | 凸版印刷株式会社 | 濃度分布マスク |
KR101603859B1 (ko) * | 2011-12-30 | 2016-03-16 | 인텔 코포레이션 | 프로세스 최적화를 위한 위상 조정 기법들 |
US9261793B2 (en) | 2012-09-14 | 2016-02-16 | Globalfoundries Inc. | Image optimization using pupil filters in projecting printing systems with fixed or restricted illumination angular distribution |
CN108051879B (zh) * | 2012-11-21 | 2020-09-08 | 3M创新有限公司 | 光学扩散膜及其制备方法 |
JP2015007725A (ja) * | 2013-06-26 | 2015-01-15 | 株式会社フォトニックラティス | 光学的結像装置 |
US9964850B2 (en) * | 2014-07-31 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to mitigate defect printability for ID pattern |
JP2019012280A (ja) * | 2018-09-19 | 2019-01-24 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
CN111060431B (zh) * | 2020-01-09 | 2020-12-25 | 北京航空航天大学 | 一种机载被动进气特种污染实时快速监测系统 |
KR20220029480A (ko) | 2020-09-01 | 2022-03-08 | 캐논 가부시끼가이샤 | 노광 장치, 노광 방법, 및 반도체 장치의 제조방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4389092A (en) * | 1980-07-29 | 1983-06-21 | Honeywell Inc. | High speed ambiguity function evaluation by optical processing utilizing a space variant linear phase shifter |
US4370405A (en) * | 1981-03-30 | 1983-01-25 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4496216A (en) * | 1982-12-30 | 1985-01-29 | Polaroid Corporation | Method and apparatus for exposing photosensitive material |
JPS6141150A (ja) * | 1984-08-02 | 1986-02-27 | Matsushita Electric Ind Co Ltd | 露光装置 |
JPH0614508B2 (ja) * | 1985-03-06 | 1994-02-23 | キヤノン株式会社 | ステップアンドリピート露光方法 |
US4750801A (en) * | 1985-09-30 | 1988-06-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical waveguide resonator filters |
GB8602482D0 (en) * | 1986-01-31 | 1986-03-05 | Crosfield Electronics Ltd | Controlling radiation beam diameters |
JPS62212617A (ja) * | 1986-03-14 | 1987-09-18 | Olympus Optical Co Ltd | 結像光学系 |
US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
JP2702183B2 (ja) * | 1988-11-04 | 1998-01-21 | 富士通株式会社 | 半導体製造装置 |
JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
US4997746A (en) * | 1988-11-22 | 1991-03-05 | Greco Nancy A | Method of forming conductive lines and studs |
US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
-
1991
- 1991-05-15 JP JP11012791A patent/JP3245882B2/ja not_active Expired - Lifetime
- 1991-09-24 US US07/765,060 patent/US5316896A/en not_active Expired - Lifetime
- 1991-09-25 KR KR1019910016640A patent/KR100213605B1/ko not_active IP Right Cessation
- 1991-09-27 EP EP97100332A patent/EP0777147A1/de not_active Withdrawn
- 1991-09-27 EP EP91308907A patent/EP0485062B1/de not_active Expired - Lifetime
- 1991-09-27 DE DE69127054T patent/DE69127054T2/de not_active Expired - Fee Related
-
1994
- 1994-04-11 US US08/225,821 patent/US5418598A/en not_active Expired - Lifetime
-
1995
- 1995-10-18 US US08/543,254 patent/US5595857A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3245882B2 (ja) | 2002-01-15 |
US5595857A (en) | 1997-01-21 |
KR920008870A (ko) | 1992-05-28 |
EP0485062B1 (de) | 1997-07-30 |
US5316896A (en) | 1994-05-31 |
EP0485062A2 (de) | 1992-05-13 |
EP0485062A3 (en) | 1993-04-28 |
EP0777147A1 (de) | 1997-06-04 |
KR100213605B1 (ko) | 1999-08-02 |
JPH04348017A (ja) | 1992-12-03 |
US5418598A (en) | 1995-05-23 |
DE69127054D1 (de) | 1997-09-04 |
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