DE69117001T2 - Synchroner dynamischer Direktzugriffspeicher - Google Patents

Synchroner dynamischer Direktzugriffspeicher

Info

Publication number
DE69117001T2
DE69117001T2 DE69117001T DE69117001T DE69117001T2 DE 69117001 T2 DE69117001 T2 DE 69117001T2 DE 69117001 T DE69117001 T DE 69117001T DE 69117001 T DE69117001 T DE 69117001T DE 69117001 T2 DE69117001 T2 DE 69117001T2
Authority
DE
Germany
Prior art keywords
random access
access memory
dynamic random
synchronous dynamic
synchronous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69117001T
Other languages
English (en)
Other versions
DE69117001D1 (de
Inventor
Atsushi Takasugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE69117001D1 publication Critical patent/DE69117001D1/de
Application granted granted Critical
Publication of DE69117001T2 publication Critical patent/DE69117001T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
DE69117001T 1990-11-20 1991-11-19 Synchroner dynamischer Direktzugriffspeicher Expired - Lifetime DE69117001T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02316523A JP3100622B2 (ja) 1990-11-20 1990-11-20 同期型ダイナミックｒａｍ

Publications (2)

Publication Number Publication Date
DE69117001D1 DE69117001D1 (de) 1996-03-21
DE69117001T2 true DE69117001T2 (de) 1996-09-26

Family

ID=18078057

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117001T Expired - Lifetime DE69117001T2 (de) 1990-11-20 1991-11-19 Synchroner dynamischer Direktzugriffspeicher

Country Status (5)

Country Link
US (4) US5287327A (de)
EP (1) EP0487288B1 (de)
JP (1) JP3100622B2 (de)
KR (1) KR100225662B1 (de)
DE (1) DE69117001T2 (de)

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DE69316955T2 (de) * 1992-09-18 1998-07-30 Hitachi Ltd Rechenanlage mit synchronem, dynamischem Speicher
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KR0157289B1 (ko) * 1995-11-13 1998-12-01 김광호 컬럼 선택 신호 제어회로
US5729504A (en) * 1995-12-14 1998-03-17 Micron Technology, Inc. Continuous burst edo memory device
US7681005B1 (en) * 1996-01-11 2010-03-16 Micron Technology, Inc. Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation
US5749086A (en) * 1996-02-29 1998-05-05 Micron Technology, Inc. Simplified clocked DRAM with a fast command input
US6209071B1 (en) * 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
JPH09312553A (ja) * 1996-05-22 1997-12-02 Nec Corp 論理回路
US6981126B1 (en) 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
US6401186B1 (en) 1996-07-03 2002-06-04 Micron Technology, Inc. Continuous burst memory which anticipates a next requested start address
US5808959A (en) * 1996-08-07 1998-09-15 Alliance Semiconductor Corporation Staggered pipeline access scheme for synchronous random access memory
US5991850A (en) 1996-08-15 1999-11-23 Micron Technology, Inc. Synchronous DRAM modules including multiple clock out signals for increasing processing speed
JPH10135820A (ja) * 1996-10-31 1998-05-22 Oki Micro Design Miyazaki:Kk カウンタの動作検査方法およびシリアルアクセスメモリ
US5708624A (en) * 1996-11-27 1998-01-13 Monolithic System Technology, Inc. Method and structure for controlling internal operations of a DRAM array
US5784332A (en) * 1996-12-12 1998-07-21 Micron Technology Corporation Clock frequency detector for a synchronous memory device
US6172935B1 (en) 1997-04-25 2001-01-09 Micron Technology, Inc. Synchronous dynamic random access memory device
US6266379B1 (en) 1997-06-20 2001-07-24 Massachusetts Institute Of Technology Digital transmitter with equalization
US5903496A (en) * 1997-06-25 1999-05-11 Intel Corporation Synchronous page-mode non-volatile memory with burst order circuitry
WO1999019805A1 (en) 1997-10-10 1999-04-22 Rambus Incorporated Method and apparatus for two step memory write operations
US6401167B1 (en) * 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
WO1999019874A1 (en) 1997-10-10 1999-04-22 Rambus Incorporated Power control system for synchronous memory device
JP2001345000A (ja) * 2000-05-31 2001-12-14 Matsushita Electric Ind Co Ltd 半導体装置
US6675272B2 (en) 2001-04-24 2004-01-06 Rambus Inc. Method and apparatus for coordinating memory operations among diversely-located memory components
US8391039B2 (en) 2001-04-24 2013-03-05 Rambus Inc. Memory module with termination component
JP2004080553A (ja) * 2002-08-21 2004-03-11 Nec Corp データ出力回路及びデータ出力方法
US7411840B2 (en) * 2004-03-02 2008-08-12 Via Technologies, Inc. Sense mechanism for microprocessor bus inversion
US7301831B2 (en) 2004-09-15 2007-11-27 Rambus Inc. Memory systems with variable delays for write data signals
JP2006120186A (ja) * 2004-10-19 2006-05-11 Hitachi Ltd 半導体集積回路およびそれを用いた画像処理システム
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
DE102019128331A1 (de) 2019-08-29 2021-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Gemeinsam genutzter decodiererschaltkreis und verfahren
CN112447218A (zh) 2019-08-29 2021-03-05 台湾积体电路制造股份有限公司 存储器电路和方法

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Also Published As

Publication number Publication date
JP3100622B2 (ja) 2000-10-16
JPH04184786A (ja) 1992-07-01
EP0487288A2 (de) 1992-05-27
US5430688A (en) 1995-07-04
US5521879A (en) 1996-05-28
EP0487288A3 (en) 1992-10-21
US5339276A (en) 1994-08-16
DE69117001D1 (de) 1996-03-21
EP0487288B1 (de) 1996-02-07
KR100225662B1 (ko) 1999-10-15
KR920010618A (ko) 1992-06-26
US5287327A (en) 1994-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: OKI SEMICONDUCTOR CO.,LTD., TOKYO, JP