DE69021284T2 - Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske. - Google Patents

Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske.

Info

Publication number
DE69021284T2
DE69021284T2 DE69021284T DE69021284T DE69021284T2 DE 69021284 T2 DE69021284 T2 DE 69021284T2 DE 69021284 T DE69021284 T DE 69021284T DE 69021284 T DE69021284 T DE 69021284T DE 69021284 T2 DE69021284 T2 DE 69021284T2
Authority
DE
Germany
Prior art keywords
making
lithography mask
resolution lithography
resolution
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021284T
Other languages
English (en)
Other versions
DE69021284D1 (de
Inventor
Patrick Clinton Arnett
Andres Bryant
John Stuart Foster
Jane Elizabeth Frommer
Jon Asao Cary Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69021284D1 publication Critical patent/DE69021284D1/de
Application granted granted Critical
Publication of DE69021284T2 publication Critical patent/DE69021284T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2049—Exposure; Apparatus therefor using a cantilever
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31759—Lithography using particular beams or near-field effects, e.g. STM-like techniques using near-field effects, e.g. STM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
DE69021284T 1989-06-19 1990-05-21 Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske. Expired - Fee Related DE69021284T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/367,815 US5049461A (en) 1989-06-19 1989-06-19 Method of making and using a high resolution lithographic mask

Publications (2)

Publication Number Publication Date
DE69021284D1 DE69021284D1 (de) 1995-09-07
DE69021284T2 true DE69021284T2 (de) 1996-04-18

Family

ID=23448734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021284T Expired - Fee Related DE69021284T2 (de) 1989-06-19 1990-05-21 Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske.

Country Status (4)

Country Link
US (1) US5049461A (de)
EP (1) EP0404742B1 (de)
JP (1) JPH0760261B2 (de)
DE (1) DE69021284T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9213423D0 (en) * 1992-06-24 1992-08-05 Hitachi Europ Ltd Nanofabricated structures
US5631664A (en) * 1992-09-18 1997-05-20 Olympus Optical Co., Ltd. Display system utilizing electron emission by polarization reversal of ferroelectric material
GB2284070B (en) * 1993-11-16 1997-08-27 Compugraphics International Li Phase shift masks
JPH07159974A (ja) * 1993-12-09 1995-06-23 Ryoden Semiconductor Syst Eng Kk パターン転写マスクおよびその製造方法
US6366340B1 (en) * 1995-08-18 2002-04-02 Hitachi, Ltd. Electron exposure apparatus
US6166386A (en) * 1997-06-02 2000-12-26 Canon Kabushiki Kaisha Micro-processing method using a probe
US6937502B2 (en) * 2003-07-10 2005-08-30 Hewlett-Packard Development Company, L.P. Re-recordable data storage medium utilizing conduction barrier
KR100868887B1 (ko) 2004-01-12 2008-11-17 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노 규모의 전기 석판 인쇄술

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235064A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Tunnelkathodenmaske fuer die elektronenlithografie, verfahren zu ihrer herstellung und verfahren zu ihrem betrieb
US4802951A (en) * 1986-03-07 1989-02-07 Trustees Of Boston University Method for parallel fabrication of nanometer scale multi-device structures
WO1988004470A1 (en) * 1986-12-07 1988-06-16 Lasarray Holding Ag Process and device for generating material structures of atomic dimensions
US4916688A (en) * 1988-03-31 1990-04-10 International Business Machines Corporation Data storage method using state transformable materials

Also Published As

Publication number Publication date
EP0404742A3 (de) 1991-12-18
JPH0760261B2 (ja) 1995-06-28
DE69021284D1 (de) 1995-09-07
JPH0341449A (ja) 1991-02-21
EP0404742B1 (de) 1995-08-02
US5049461A (en) 1991-09-17
EP0404742A2 (de) 1990-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee