DE69017354D1 - Dampfablagerungsapparat. - Google Patents

Dampfablagerungsapparat.

Info

Publication number: DE69017354D1
Authority: DE; Germany
Prior art keywords: vapor deposition; deposition apparatus; vapor; deposition
Prior art date: 1989-11-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69017354T

Other languages

English (en)

Other versions

DE69017354T2 (de

Inventor

Akiyoshi Mikami

Takashi Ogura

Kousuke Terada

Masaru Yoshida

Takuo Yamashita

Koichi Tanaka

Katsushi Okibayashi

Shigeo Nakajima

Hiroaki Nakaya

Kouji Taniguchi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-11-02

Filing date

1990-11-02

Publication date

1995-04-06

1990-11-02 Application filed by Sharp Corp filed Critical Sharp Corp

1995-04-06 Application granted granted Critical

1995-04-06 Publication of DE69017354D1 publication Critical patent/DE69017354D1/de

1995-09-28 Publication of DE69017354T2 publication Critical patent/DE69017354T2/de

2010-11-03 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles

DE69017354T 1989-11-02 1990-11-02 Dampfablagerungsapparat. Expired - Fee Related DE69017354T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1286454A JPH0818902B2 (ja)	1989-11-02	1989-11-02	気相成長装置

Publications (2)

Publication Number	Publication Date
DE69017354D1 true DE69017354D1 (de)	1995-04-06
DE69017354T2 DE69017354T2 (de)	1995-09-28

Family

ID=17704602

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69017354T Expired - Fee Related DE69017354T2 (de)	1989-11-02	1990-11-02	Dampfablagerungsapparat.

Country Status (5)

Country	Link
US (1)	US5334250A (de)
EP (1)	EP0426494B1 (de)
JP (1)	JPH0818902B2 (de)
DE (1)	DE69017354T2 (de)
FI (1)	FI95150C (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6337102B1 (en) *	1997-11-17	2002-01-08	The Trustees Of Princeton University	Low pressure vapor phase deposition of organic thin films
US6656272B2 (en) *	2001-03-30	2003-12-02	Technologies And Devices International, Inc.	Method of epitaxially growing submicron group III nitride layers utilizing HVPE
KR20030002070A (ko) *	2001-06-30	2003-01-08	삼성전자 주식회사	원심력을 이용한 비점착 웨이퍼 건조방법 및 장치
US7501023B2 (en) *	2001-07-06	2009-03-10	Technologies And Devices, International, Inc.	Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US20060011135A1 (en) *	2001-07-06	2006-01-19	Dmitriev Vladimir A	HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US6936357B2 (en) *	2001-07-06	2005-08-30	Technologies And Devices International, Inc.	Bulk GaN and ALGaN single crystals
US20070032046A1 (en) *	2001-07-06	2007-02-08	Dmitriev Vladimir A	Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6613143B1 (en) *	2001-07-06	2003-09-02	Technologies And Devices International, Inc.	Method for fabricating bulk GaN single crystals
JP4714422B2 (ja) *	2003-04-05	2011-06-29	ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー．	ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060065622A1 (en) *	2004-09-27	2006-03-30	Floyd Philip D	Method and system for xenon fluoride etching with enhanced efficiency
KR100792396B1 (ko) *	2005-10-11	2008-01-08	주식회사 유진테크	파티션 구조형 가열유닛과 이를 이용한 히팅장치
US9416464B1 (en)	2006-10-11	2016-08-16	Ostendo Technologies, Inc.	Apparatus and methods for controlling gas flows in a HVPE reactor
EP2104948A2 (de) *	2007-02-20	2009-09-30	Qualcomm Mems Technologies, Inc.	Ausrüstung und verfahren zur mems-ätzung
US7719752B2 (en)	2007-05-11	2010-05-18	Qualcomm Mems Technologies, Inc.	MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en)	2007-06-22	2009-08-04	Qualcomm Mems Technologies, Inc.	Methods of making a MEMS device by monitoring a process parameter
EP2181355A1 (de)	2007-07-25	2010-05-05	Qualcomm Mems Technologies, Inc.	Mems-anzeigevorrichtungen und herstellungsverfahren dafür
US8023191B2 (en) *	2008-05-07	2011-09-20	Qualcomm Mems Technologies, Inc.	Printable static interferometric images
US9343273B2 (en) *	2008-09-25	2016-05-17	Seagate Technology Llc	Substrate holders for uniform reactive sputtering
WO2011108640A1 (ja) *	2010-03-04	2011-09-09	Jx日鉱日石金属株式会社	結晶成長装置、窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体結晶
US8659816B2 (en)	2011-04-25	2014-02-25	Qualcomm Mems Technologies, Inc.	Mechanical layer and methods of making the same
US9909205B2 (en) *	2014-03-11	2018-03-06	Joled Inc.	Vapor deposition apparatus, vapor deposition method using vapor deposition apparatus, and device production method
CN106103790B (zh) *	2014-03-11	2018-12-07	株式会社日本有机雷特显示器	蒸镀装置及其控制方法、使用了蒸镀装置的蒸镀方法、以及器件的制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3098763A (en) *	1961-05-29	1963-07-23	Raytheon Co	Chemical reactor
US3310425A (en) *	1963-06-28	1967-03-21	Rca Corp	Method of depositing epitaxial layers of gallium arsenide
US3424629A (en) *	1965-12-13	1969-01-28	Ibm	High capacity epitaxial apparatus and method
US3858548A (en) *	1972-08-16	1975-01-07	Corning Glass Works	Vapor transport film deposition apparatus
JPS544566A (en) *	1977-06-13	1979-01-13	Nec Corp	Vapor phase growth method of semiconductor
JPS5931985B2 (ja) *	1977-11-14	1984-08-06	富士通株式会社	マグネスピネルの気相成長法
DD206687A3 (de) *	1981-07-28	1984-02-01	Mikroelektronik Zt Forsch Tech	Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
US4487640A (en) *	1983-02-22	1984-12-11	The United States Of America As Represented By The Secretary Of The Air Force	Method for the preparation of epitaxial films of mercury cadmium telluride
JPS59207622A (ja) *	1983-05-11	1984-11-24	Furukawa Electric Co Ltd:The	半導体薄膜気相成長装置
JPS6065526A (ja) *	1983-09-20	1985-04-15	Nec Corp	多元混晶３−５族化合物半導体成長方法及び装置
JPS60215594A (ja) *	1984-04-06	1985-10-28	Fujitsu Ltd	気相成長装置
JPS60253212A (ja) *	1984-05-30	1985-12-13	Toshiba Mach Co Ltd	気相成長装置
JPS61101021A (ja) *	1984-10-24	1986-05-19	Hitachi Ltd	膜形成装置
JPH07105345B2 (ja) *	1985-08-08	1995-11-13	日電アネルバ株式会社	基体処理装置
JPS6291496A (ja) *	1985-10-15	1987-04-25	Nec Corp	気相成長装置用反応管
JPH0691020B2 (ja) *	1986-02-14	1994-11-14	日本電信電話株式会社	気相成長方法および装置
JPS6335776A (ja) *	1986-07-30	1988-02-16	Matsushita Electronics Corp	気相化学蒸着装置
US4886412A (en) *	1986-10-28	1989-12-12	Tetron, Inc.	Method and system for loading wafers
JPH01108744A (ja) *	1987-10-22	1989-04-26	Oki Electric Ind Co Ltd	半導体製造装置
US4854266A (en) *	1987-11-02	1989-08-08	Btu Engineering Corporation	Cross-flow diffusion furnace
JPH0760738B2 (ja) *	1988-05-13	1995-06-28	シャープ株式会社	エレクトロルミネッセンス発光膜の製造方法

1989
- 1989-11-02 JP JP1286454A patent/JPH0818902B2/ja not_active Expired - Fee Related
1990
- 1990-10-30 FI FI905349A patent/FI95150C/fi not_active IP Right Cessation
- 1990-11-02 DE DE69017354T patent/DE69017354T2/de not_active Expired - Fee Related
- 1990-11-02 EP EP90312034A patent/EP0426494B1/de not_active Expired - Lifetime
1993
- 1993-02-17 US US08/022,742 patent/US5334250A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
FI95150B (fi)	1995-09-15
FI95150C (fi)	1995-12-27
JPH0818902B2 (ja)	1996-02-28
DE69017354T2 (de)	1995-09-28
FI905349A0 (fi)	1990-10-30
US5334250A (en)	1994-08-02
EP0426494B1 (de)	1995-03-01
JPH03150293A (ja)	1991-06-26
EP0426494A1 (de)	1991-05-08

Legal Events

Date	Code	Title	Description
1996-03-28	8364	No opposition during term of opposition
1997-03-20	8328	Change in the person/name/address of the agent	Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN
2002-11-07	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
NO903190L (no)	1991-01-21	Fremgangsmaate for klorering av sukrose-b-estere.
DE69017354T2 (de)	1995-09-28	Dampfablagerungsapparat.
DE69105605T2 (de)	1995-04-13	Beschichtungsverfahren.
DE69001292D1 (de)	1993-05-13	Ueberzugsverfahren.
DE3876975T2 (de)	1993-04-29	Mehrfachbeschichtungsverfahren.
DE69100793D1 (de)	1994-01-27	Verbessertes Hydrocyanisierungsverfahren.
DE69112222T2 (de)	1996-03-28	Beschichtungsverfahren.
FI900684A0 (fi)	1990-02-12	Process foer framstaellning av polyaluminiumfoereningar.
DE69014550D1 (de)	1995-01-12	Beschichtungsvorrichtung.
DE69014360T2 (de)	1995-05-24	Beschichtungsvorrichtung.
FI920196A0 (fi)	1992-01-16	Miljoevaenligare process foer blekning av lignocellulosamaterial.
NO903371D0 (no)	1990-07-31	Beleggsammensetninger.
DE59009000D1 (de)	1995-06-08	Beschichtungsvorrichtung.
FI912316A (fi)	1991-11-15	Laite höyrykerrostamisen suorittamiseksi
DE69112487T2 (de)	1996-03-14	Beschichtungsapparat.
MX9202702A (es)	1992-12-01	Proceso de bioblanqueo.
FI902336A0 (fi)	1990-05-10	Anordning foer framstaellning av en fristaoende kiselkristall.
DE69104850D1 (de)	1994-12-01	Beschichtungsverfahren.
DE69204206D1 (de)	1995-09-28	Hydrodeziklierungsverfahren.
DE69002957T2 (de)	1993-12-16	Vakuum-Destillationsverfahren.
FI903088A0 (fi)	1990-06-19	Process foer framstaellning av straengsprutade skumkroppar.
DE59006286D1 (de)	1994-08-04	Streicheinrichtung.
DE69003963T2 (de)	1994-02-10	Vakuum-Destillationsverfahren.
DE69010835D1 (de)	1994-08-25	Chemischer Dampfablagerungsapparat.
DE3874896D1 (de)	1992-10-29	Ablagerungsapparatur.