DE68919408D1 - Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes. - Google Patents
Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes.Info
- Publication number
- DE68919408D1 DE68919408D1 DE68919408T DE68919408T DE68919408D1 DE 68919408 D1 DE68919408 D1 DE 68919408D1 DE 68919408 T DE68919408 T DE 68919408T DE 68919408 T DE68919408 T DE 68919408T DE 68919408 D1 DE68919408 D1 DE 68919408D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- semiconductor
- manufacturing
- same
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP622289 | 1989-01-13 | ||
JP1110501A JP2809690B2 (ja) | 1989-01-13 | 1989-04-28 | 化合物半導体材料とこれを用いた半導体素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68919408D1 true DE68919408D1 (de) | 1994-12-22 |
DE68919408T2 DE68919408T2 (de) | 1995-04-20 |
Family
ID=26340303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68919408T Expired - Fee Related DE68919408T2 (de) | 1989-01-13 | 1989-09-29 | Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5076860A (de) |
EP (1) | EP0377940B1 (de) |
DE (1) | DE68919408T2 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0444630B1 (de) * | 1990-02-28 | 1997-05-21 | Toyoda Gosei Co., Ltd. | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US5173751A (en) * | 1991-01-21 | 1992-12-22 | Pioneer Electronic Corporation | Semiconductor light emitting device |
EP0576566B1 (de) * | 1991-03-18 | 1999-05-26 | Trustees Of Boston University | Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
US7235819B2 (en) | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
US5192987A (en) * | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
DE69431333T2 (de) * | 1993-10-08 | 2003-07-31 | Mitsubishi Cable Ind Ltd | GaN-Einkristall |
US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
US6130147A (en) * | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
US5814533A (en) * | 1994-08-09 | 1998-09-29 | Rohm Co., Ltd. | Semiconductor light emitting element and manufacturing method therefor |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
US5677538A (en) * | 1995-07-07 | 1997-10-14 | Trustees Of Boston University | Photodetectors using III-V nitrides |
JP3564811B2 (ja) * | 1995-07-24 | 2004-09-15 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
JP3164016B2 (ja) * | 1996-05-31 | 2001-05-08 | 住友電気工業株式会社 | 発光素子および発光素子用ウエハの製造方法 |
JP3060973B2 (ja) * | 1996-12-24 | 2000-07-10 | 日本電気株式会社 | 選択成長法を用いた窒化ガリウム系半導体レーザの製造方法及び窒化ガリウム系半導体レーザ |
US5838707A (en) * | 1996-12-27 | 1998-11-17 | Motorola, Inc. | Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication |
US6599133B2 (en) * | 1997-11-18 | 2003-07-29 | Technologies And Devices International, Inc. | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
US6316098B1 (en) | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
US6783849B2 (en) * | 1998-03-27 | 2004-08-31 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
GB2343294A (en) * | 1998-10-31 | 2000-05-03 | Sharp Kk | Lattice-matched semiconductor devices |
EP1003227B1 (de) * | 1998-11-06 | 2010-01-13 | Panasonic Corporation | Halbleitervorrichtung |
US6984851B2 (en) * | 2000-06-21 | 2006-01-10 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
US6420732B1 (en) | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
US6706119B2 (en) * | 2001-03-30 | 2004-03-16 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE |
CN1214467C (zh) | 2001-05-28 | 2005-08-10 | 昭和电工株式会社 | 半导体器件,半导体层及其生产方法 |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
US20060011135A1 (en) * | 2001-07-06 | 2006-01-19 | Dmitriev Vladimir A | HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run |
US6613143B1 (en) * | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
WO2003023095A1 (fr) * | 2001-09-06 | 2003-03-20 | Toshiba Ceramics Co., Ltd. | Plaquette de semi-conducteur et production de cette plaquette |
JP2006512748A (ja) * | 2001-12-21 | 2006-04-13 | アイクストロン、アーゲー | Iii−v半導体皮膜を非iii−v基板に沈積する方法 |
DE10234694A1 (de) | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat |
US7034330B2 (en) * | 2002-10-22 | 2006-04-25 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor device, production method thereof and light-emitting diode |
US7786550B2 (en) * | 2003-03-06 | 2010-08-31 | Panasonic Corporation | P-type semiconductor and semiconductor hetero material and manufacturing methods thereof |
US20050115492A1 (en) * | 2003-11-28 | 2005-06-02 | Chia-Cheng Liu | Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition |
DE112005000529B4 (de) * | 2004-03-30 | 2011-04-28 | Showa Denko K.K., Minato-ku | Verbindungshalbleiter-Vorrichtung, Herstellungsverfahren der Verbindungshalbleiter-Vorrichtung und Diode |
TWI258183B (en) * | 2004-04-28 | 2006-07-11 | Showa Denko Kk | Compound semiconductor light-emitting device |
TWI296160B (en) * | 2004-05-06 | 2008-04-21 | Showa Denko Kk | Pn junction-type compound semiconductor light emitting diode |
JP4661088B2 (ja) * | 2004-06-01 | 2011-03-30 | 住友化学株式会社 | pn接合を有する化合物半導体基板の製造方法 |
US20070006801A1 (en) * | 2005-07-09 | 2007-01-11 | Stringfellow Gerald B | Use of surfactants to control unintentional dopant in semiconductors |
US8647435B1 (en) | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
KR101172143B1 (ko) * | 2009-08-10 | 2012-08-07 | 엘지이노텍 주식회사 | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 |
WO2011028033A2 (ko) * | 2009-09-02 | 2011-03-10 | 엘지이노텍주식회사 | 형광체, 형광체 제조방법 및 백색 발광 소자 |
KR101163902B1 (ko) | 2010-08-10 | 2012-07-09 | 엘지이노텍 주식회사 | 발광 소자 |
US11393683B2 (en) * | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
US9834860B2 (en) * | 2009-10-14 | 2017-12-05 | Alta Devices, Inc. | Method of high growth rate deposition for group III/V materials |
JP5996846B2 (ja) * | 2011-06-30 | 2016-09-21 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
CN110494987B (zh) * | 2017-04-24 | 2022-03-01 | 苏州晶湛半导体有限公司 | 一种半导体结构和制备半导体结构的方法 |
CN112758902B (zh) * | 2021-01-06 | 2022-01-28 | 西南科技大学 | 用于高效析氧反应的优化电子构型Co4N纳米片的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2214224C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen |
US4213781A (en) * | 1978-11-20 | 1980-07-22 | Westinghouse Electric Corp. | Deposition of solid semiconductor compositions and novel semiconductor materials |
JPS56116673A (en) * | 1980-02-19 | 1981-09-12 | Sharp Corp | Amorphous thin film solar cell |
JPS56145199A (en) * | 1980-04-04 | 1981-11-11 | Showa Denko Kk | Synthesis of cubic boron nitride |
US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
JPS62243144A (ja) * | 1986-04-15 | 1987-10-23 | Dainippon Printing Co Ltd | 光学的記録媒体および光学的記録方法 |
GB2206257B (en) * | 1987-05-26 | 1991-08-14 | Clarion Co Ltd | Surface acoustic wave device |
NL8701497A (nl) * | 1987-06-26 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van electromagnetische straling. |
-
1989
- 1989-09-29 DE DE68919408T patent/DE68919408T2/de not_active Expired - Fee Related
- 1989-09-29 EP EP89310004A patent/EP0377940B1/de not_active Expired - Lifetime
- 1989-09-29 US US07/414,520 patent/US5076860A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0377940A3 (de) | 1991-05-29 |
US5076860A (en) | 1991-12-31 |
DE68919408T2 (de) | 1995-04-20 |
EP0377940B1 (de) | 1994-11-17 |
EP0377940A2 (de) | 1990-07-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |