DE602006017362D1 - Bidirektionale mos-strommessschaltung - Google Patents

Bidirektionale mos-strommessschaltung

Info

Publication number
DE602006017362D1
DE602006017362D1 DE602006017362T DE602006017362T DE602006017362D1 DE 602006017362 D1 DE602006017362 D1 DE 602006017362D1 DE 602006017362 T DE602006017362 T DE 602006017362T DE 602006017362 T DE602006017362 T DE 602006017362T DE 602006017362 D1 DE602006017362 D1 DE 602006017362D1
Authority
DE
Germany
Prior art keywords
sensing
sensing devices
sense amplifier
power
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006017362T
Other languages
English (en)
Inventor
Alain Chapuis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power One Inc
Original Assignee
Power One Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power One Inc filed Critical Power One Inc
Publication of DE602006017362D1 publication Critical patent/DE602006017362D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
DE602006017362T 2005-05-10 2006-02-22 Bidirektionale mos-strommessschaltung Active DE602006017362D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/126,429 US7327149B2 (en) 2005-05-10 2005-05-10 Bi-directional MOS current sense circuit
PCT/US2006/006581 WO2006121485A2 (en) 2005-05-10 2006-02-22 Bi-directional mos current sense circuit

Publications (1)

Publication Number Publication Date
DE602006017362D1 true DE602006017362D1 (de) 2010-11-18

Family

ID=37397017

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006017362T Active DE602006017362D1 (de) 2005-05-10 2006-02-22 Bidirektionale mos-strommessschaltung

Country Status (7)

Country Link
US (1) US7327149B2 (de)
EP (1) EP1886153B1 (de)
KR (1) KR100971056B1 (de)
CN (1) CN101198877B (de)
AT (1) ATE484016T1 (de)
DE (1) DE602006017362D1 (de)
WO (1) WO2006121485A2 (de)

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US9046905B2 (en) 2013-03-08 2015-06-02 Analog Devices Global Apparatus and methods for bidirectional current sensing in a switching regulator
US8937467B2 (en) 2013-03-08 2015-01-20 Analog Devices Technology Apparatus and methods for switching regulator current sensing
US9791480B2 (en) 2013-05-21 2017-10-17 Analog Devices Global Current sensing of switching power regulators
US9429598B2 (en) * 2014-06-30 2016-08-30 Infineon Technologies Ag Current measurement and control of a semiconductor element based on the current measurement in a power semiconductor arrangement
US9791881B2 (en) 2014-07-22 2017-10-17 Infineon Technologies Austria Ag Self-driven synchronous rectification for a power converter
DE102014226719B3 (de) * 2014-12-19 2016-03-31 Dialog Semiconductor (Uk) Limited Leistungsumsetzer mit Fähigkeit für negativen Strom und niedrigem Ruhestromverbrauch
US9826291B2 (en) * 2015-10-09 2017-11-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Low distortion single-to-differential wide-band variable gain amplifier for optical communications
US10156592B2 (en) * 2015-12-30 2018-12-18 Nxp Usa, Inc. Current sensing circuit and method
US10038378B2 (en) * 2016-09-21 2018-07-31 Qualcomm Incorporated Device and method to stabilize a supply voltage
US10852329B2 (en) * 2017-10-30 2020-12-01 Microchip Technology Incorporated High precision current sensing using sense amplifier with digital AZ offset compensation
TWI664814B (zh) * 2017-11-03 2019-07-01 尼克森微電子股份有限公司 單向導通裝置
JP6805192B2 (ja) * 2018-02-06 2020-12-23 株式会社東芝 電流検出回路
US10461629B2 (en) * 2018-02-19 2019-10-29 Texas Instruments Incorporated System and apparatus to provide current compensation
CN113125830B (zh) * 2019-12-30 2023-06-09 圣邦微电子（北京）股份有限公司 一种双向电流检测电路和电源系统
CN113252970B (zh) * 2021-04-23 2022-11-18 长城电源技术有限公司 负载检测电路和电源系统

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Also Published As

Publication number Publication date
CN101198877A (zh) 2008-06-11
EP1886153A4 (de) 2009-05-27
WO2006121485A3 (en) 2007-04-26
WO2006121485A2 (en) 2006-11-16
EP1886153B1 (de) 2010-10-06
KR20080009156A (ko) 2008-01-24
US7327149B2 (en) 2008-02-05
US20060255783A1 (en) 2006-11-16
CN101198877B (zh) 2011-05-04
ATE484016T1 (de) 2010-10-15
EP1886153A2 (de) 2008-02-13
KR100971056B1 (ko) 2010-07-20

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