DE60144137D1 - Halbleiteranordnung und optoelektronische Platte - Google Patents

Halbleiteranordnung und optoelektronische Platte

Info

Publication number
DE60144137D1
DE60144137D1 DE60144137T DE60144137T DE60144137D1 DE 60144137 D1 DE60144137 D1 DE 60144137D1 DE 60144137 T DE60144137 T DE 60144137T DE 60144137 T DE60144137 T DE 60144137T DE 60144137 D1 DE60144137 D1 DE 60144137D1
Authority
DE
Germany
Prior art keywords
transmission region
optical transmission
semiconductor device
receiving part
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144137T
Other languages
English (en)
Inventor
Mamoru Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60144137D1 publication Critical patent/DE60144137D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
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    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3608—Fibre wiring boards, i.e. where fibres are embedded or attached in a pattern on or to a substrate, e.g. flexible sheets
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/1032—III-V
    • H01L2924/10336—Aluminium gallium arsenide [AlGaAs]
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/1204—Optical Diode
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
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    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE60144137T 2000-12-28 2001-12-21 Halbleiteranordnung und optoelektronische Platte Expired - Lifetime DE60144137D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000400966 2000-12-28
JP2001379831A JP2002286959A (ja) 2000-12-28 2001-12-13 半導体装置、光電融合基板、及びそれらの製造方法

Publications (1)

Publication Number Publication Date
DE60144137D1 true DE60144137D1 (de) 2011-04-14

Family

ID=26607076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144137T Expired - Lifetime DE60144137D1 (de) 2000-12-28 2001-12-21 Halbleiteranordnung und optoelektronische Platte

Country Status (5)

Country Link
US (3) US6897430B2 (de)
EP (1) EP1219994B1 (de)
JP (1) JP2002286959A (de)
AT (1) ATE500619T1 (de)
DE (1) DE60144137D1 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002286959A (ja) * 2000-12-28 2002-10-03 Canon Inc 半導体装置、光電融合基板、及びそれらの製造方法
US8143108B2 (en) * 2004-10-07 2012-03-27 Stats Chippac, Ltd. Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate
US20020121707A1 (en) * 2001-02-27 2002-09-05 Chippac, Inc. Super-thin high speed flip chip package
USRE44438E1 (en) 2001-02-27 2013-08-13 Stats Chippac, Ltd. Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate
US6936854B2 (en) * 2001-05-10 2005-08-30 Canon Kabushiki Kaisha Optoelectronic substrate
EP1286194A3 (de) 2001-08-21 2004-05-19 Canon Kabushiki Kaisha Optische Wellenleitervorrichtung
JP3768901B2 (ja) * 2002-02-28 2006-04-19 松下電器産業株式会社 立体光導波路の製造方法
JP3833131B2 (ja) * 2002-03-25 2006-10-11 キヤノン株式会社 光伝送装置
JP3833132B2 (ja) * 2002-03-25 2006-10-11 キヤノン株式会社 光導波装置の製造方法
JP3848210B2 (ja) * 2002-05-29 2006-11-22 キヤノン株式会社 電子回路基板
JP2004031508A (ja) * 2002-06-24 2004-01-29 Nec Corp 光電気複合モジュールおよびそのモジュールを構成要素とする光入出力装置
TWI294262B (en) * 2002-06-28 2008-03-01 Matsushita Electric Ind Co Ltd A light reception/emission device built-in module with optical and electrical wiring combined therein and method of making the same
US20040012978A1 (en) * 2002-07-18 2004-01-22 Yutaka Doi Direct deposition waveguide mirror
JP2004069798A (ja) 2002-08-02 2004-03-04 Canon Inc 光電融合ビアをもつ光電融合配線基板
JP3927883B2 (ja) 2002-08-02 2007-06-13 キヤノン株式会社 光導波装置、およびそれを用いた光電融合基板
JP3897688B2 (ja) 2002-12-11 2007-03-28 キヤノン株式会社 光電融合配線基板
JP2004317717A (ja) 2003-04-15 2004-11-11 Canon Inc 再構成可能な光電融合回路
JP4058764B2 (ja) * 2003-06-26 2008-03-12 住友電気工業株式会社 通信モジュール
KR20050004005A (ko) * 2003-07-01 2005-01-12 마츠시타 덴끼 산교 가부시키가이샤 실장체, 광 전송로 및 광 전기 회로기판
JP4510532B2 (ja) * 2003-07-01 2010-07-28 パナソニック株式会社 実装体、光伝送路および光電気回路基板
EP1668702A1 (de) * 2003-09-05 2006-06-14 Adrian H. Kitai Sphärengetragene dünnfilm-leuchtschicht-elektrolumineszenz-einrichtungen
US7248757B2 (en) * 2003-12-15 2007-07-24 Canon Kabushiki Kaisha Method, device and computer program for designing a circuit having electric wires and optical connections
AT413891B (de) 2003-12-29 2006-07-15 Austria Tech & System Tech Leiterplattenelement mit wenigstens einem licht-wellenleiter sowie verfahren zur herstellung eines solchen leiterplattenelements
US7251393B2 (en) * 2004-03-30 2007-07-31 Lockheed Martin Corporation Optical router
JP2006053662A (ja) * 2004-08-10 2006-02-23 Matsushita Electric Ind Co Ltd 多重プロセッサ
EP1679749A1 (de) * 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Halbleiter Photodiode und Verfahren zur Herstellung
KR100996805B1 (ko) * 2006-04-14 2010-11-25 오므론 가부시키가이샤 광전송 모듈, 접속 부품, 및 광전송 모듈을 구비한 전자 기기
JP2007310016A (ja) * 2006-05-16 2007-11-29 Olympus Corp 光学系
JP5185683B2 (ja) 2008-04-24 2013-04-17 パナソニック株式会社 Ｌｅｄモジュールの製造方法および照明器具の製造方法
JP2009283801A (ja) * 2008-05-26 2009-12-03 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
WO2010038871A1 (ja) * 2008-10-03 2010-04-08 ソニー株式会社 半導体装置
US8041229B2 (en) * 2008-12-12 2011-10-18 Fujitsu Limited System and method for optoelectrical communication
US8041230B2 (en) * 2008-12-12 2011-10-18 Fujitsu Limited System and method for optoelectrical communication
US20120153340A1 (en) * 2009-06-05 2012-06-21 Advanced Photonics, Inc. Submount, optical module provided therewith, and submount manufacturing method
JP2011053354A (ja) * 2009-08-31 2011-03-17 Toshiba Corp 光電気配線フィルムおよび光電気配線モジュール
US8428401B2 (en) * 2009-12-16 2013-04-23 Telefonaktiebolaget L M Ericsson (Publ) On-chip optical waveguide
JP2011138909A (ja) * 2009-12-28 2011-07-14 Clean Venture 21 Corp 光電変換素子およびその製造方法、ならびに光電変換装置およびその製造方法
EP2539879B1 (de) 2010-02-25 2019-11-06 Luminator Holding, L.P. System und verfahren zur drahtlosen steuerung von zeichen
CN104977086B (zh) * 2014-04-01 2018-08-24 热映光电股份有限公司 外接式温度感测模块及其温度感测方法、及温度感测系统
US10627490B2 (en) 2016-01-31 2020-04-21 Velodyne Lidar, Inc. Multiple pulse, LIDAR based 3-D imaging
CA3024510C (en) 2016-06-01 2022-10-04 Velodyne Lidar, Inc. Multiple pixel scanning lidar
JP2018105925A (ja) * 2016-12-22 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP4142457A1 (de) 2017-02-01 2023-03-01 D-Wave Systems Inc. Systeme und verfahren zur herstellung von supraleitenden integrierten schaltungen
CA3057988A1 (en) * 2017-03-31 2018-10-04 Velodyne Lidar, Inc. Integrated lidar illumination power control
WO2018208843A1 (en) 2017-05-08 2018-11-15 Velodyne Lidar, Inc. Lidar data acquisition and control
JP2019197126A (ja) * 2018-05-09 2019-11-14 日本電信電話株式会社 光デバイスおよび光結合方法
US10712434B2 (en) 2018-09-18 2020-07-14 Velodyne Lidar, Inc. Multi-channel LIDAR illumination driver
US11885958B2 (en) 2019-01-07 2024-01-30 Velodyne Lidar Usa, Inc. Systems and methods for a dual axis resonant scanning mirror
CN113707787B (zh) * 2020-05-22 2023-07-18 重庆康佳光电技术研究院有限公司 球形倒装微型led及其制造方法、显示面板
JP7138149B2 (ja) * 2020-11-11 2022-09-15 浜松ホトニクス株式会社 受光装置、及び受光装置の製造方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2554626C3 (de) * 1975-12-04 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Abschirmeinrichtung und Verfahren zu deren Aufbringung
JPS553673A (en) 1978-06-23 1980-01-11 Toshiba Electric Equip Wiring device
JPS58225746A (ja) 1982-06-24 1983-12-27 Ricoh Co Ltd コントロ−ル用の光パス
JPS5975656A (ja) 1982-10-25 1984-04-28 Agency Of Ind Science & Technol 半導体集積回路構造
JPS6128240A (ja) * 1984-07-18 1986-02-07 Kuraray Co Ltd 基板間信号伝送方式
JPH0642527B2 (ja) 1989-10-10 1994-06-01 日本電気株式会社 光導波路を用いた情報処理装置
EP0617314A4 (de) 1992-09-10 1995-10-18 Fujitsu Ltd System mit optischer schaltung und dessen komponenten.
JPH06281831A (ja) 1993-03-25 1994-10-07 Nippon Telegr & Teleph Corp <Ntt> 電気配線・光配線混載フレキシブルプリント配線板及びその基板
US5562838A (en) 1993-03-29 1996-10-08 Martin Marietta Corporation Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography
DE69637318T2 (de) * 1995-02-02 2008-09-04 Sumitomo Electric Industries, Ltd. PIN lichtempfindliche Vorrichtung und ihr Herstellungsverfahren
JPH08220357A (ja) 1995-02-15 1996-08-30 Nippon Sheet Glass Co Ltd 光学接続装置およびその製造方法
JPH0996746A (ja) 1995-09-29 1997-04-08 Fujitsu Ltd アクティブ光回路シートまたはアクティブ光回路基板
US5835646A (en) 1995-09-19 1998-11-10 Fujitsu Limited Active optical circuit sheet or active optical circuit board, active optical connector and optical MCM, process for fabricating optical waveguide, and devices obtained thereby
JP3500843B2 (ja) 1996-04-01 2004-02-23 富士ゼロックス株式会社 光バス及び情報処理装置
KR100377825B1 (ko) * 1996-10-09 2003-07-16 나가다 죠스게 반도체디바이스
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
JPH10294254A (ja) 1997-04-17 1998-11-04 Canon Inc 球状デバイス露光装置及び製造方法
US6097472A (en) 1997-04-17 2000-08-01 Canon Kabushiki Kaisha Apparatus and method for exposing a pattern on a ball-like device material
JPH1154406A (ja) 1997-08-04 1999-02-26 Mitsui High Tec Inc 球状ｉｃの露光方法
JPH1172750A (ja) 1997-08-29 1999-03-16 Oki Electric Ind Co Ltd 自由空間光配線用光学装置
JPH11111609A (ja) 1997-10-02 1999-04-23 Ball Semiconductor Kk 球状半導体用照明装置
JP3724215B2 (ja) 1997-11-10 2005-12-07 富士ゼロックス株式会社 光信号伝送装置および信号処理装置
US6557020B1 (en) 1997-12-10 2003-04-29 Seiko Epson Corporation Information processing system, enciphering/deciphering system, system LSI, and electronic apparatus
JP2000031189A (ja) 1998-07-09 2000-01-28 Nippon Steel Corp 球状半導体装置
JP3955394B2 (ja) 1998-07-09 2007-08-08 新日鉄マテリアルズ株式会社 球状半導体装置の製造方法
US6343171B1 (en) * 1998-10-09 2002-01-29 Fujitsu Limited Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making
JP3100584B2 (ja) 1999-02-15 2000-10-16 日本電信電話株式会社 光電子集積回路およびその作製方法
JP4270647B2 (ja) 1999-05-31 2009-06-03 ボールセミコンダクター株式会社 傾斜計
US6516104B1 (en) * 1999-06-25 2003-02-04 Kabushiki Kaisha Toshiba Optical wiring device
US6324904B1 (en) * 1999-08-19 2001-12-04 Ball Semiconductor, Inc. Miniature pump-through sensor modules
US6499889B1 (en) * 1999-12-08 2002-12-31 Yazaki Corporation Method of assembling optical connector, optical connector and hybrid connector
JP3689615B2 (ja) * 2000-03-29 2005-08-31 キヤノン株式会社 立体形状を有する光電融合デバイス
JP2001280973A (ja) * 2000-03-31 2001-10-10 Canon Inc ３次元リングレーザ装置およびこれを用いたジャイロ・コンパス
JP2002286959A (ja) * 2000-12-28 2002-10-03 Canon Inc 半導体装置、光電融合基板、及びそれらの製造方法
US6611000B2 (en) * 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
US6936854B2 (en) 2001-05-10 2005-08-30 Canon Kabushiki Kaisha Optoelectronic substrate

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US20020109074A1 (en) 2002-08-15
US20050151062A1 (en) 2005-07-14
US6936808B2 (en) 2005-08-30
US7141778B2 (en) 2006-11-28
EP1219994A2 (de) 2002-07-03
EP1219994A3 (de) 2004-11-10
US6897430B2 (en) 2005-05-24
ATE500619T1 (de) 2011-03-15
US20060001117A1 (en) 2006-01-05
JP2002286959A (ja) 2002-10-03

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