DE60036443D1 - Verfahren und Vorrichtung zur Inspektion eines Retikels unter Verwendung von Luftbildern - Google Patents

Verfahren und Vorrichtung zur Inspektion eines Retikels unter Verwendung von Luftbildern

Info

Publication number
DE60036443D1
DE60036443D1 DE60036443T DE60036443T DE60036443D1 DE 60036443 D1 DE60036443 D1 DE 60036443D1 DE 60036443 T DE60036443 T DE 60036443T DE 60036443 T DE60036443 T DE 60036443T DE 60036443 D1 DE60036443 D1 DE 60036443D1
Authority
DE
Germany
Prior art keywords
reticle
inspecting
aerial photographs
photographs
aerial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60036443T
Other languages
English (en)
Other versions
DE60036443T2 (de
Inventor
Boaz Kenan
Yair Eran
Avner Karpol
Emanuel Elyasaf
Ehud Tirosh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE60036443D1 publication Critical patent/DE60036443D1/de
Application granted granted Critical
Publication of DE60036443T2 publication Critical patent/DE60036443T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
DE60036443T 1999-10-13 2000-10-12 Verfahren und Vorrichtung zur Inspektion eines Retikels unter Verwendung von Luftbildern Expired - Fee Related DE60036443T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US417518 1999-10-13
US09/417,518 US6268093B1 (en) 1999-10-13 1999-10-13 Method for reticle inspection using aerial imaging

Publications (2)

Publication Number Publication Date
DE60036443D1 true DE60036443D1 (de) 2007-10-31
DE60036443T2 DE60036443T2 (de) 2008-06-26

Family

ID=23654328

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036443T Expired - Fee Related DE60036443T2 (de) 1999-10-13 2000-10-12 Verfahren und Vorrichtung zur Inspektion eines Retikels unter Verwendung von Luftbildern

Country Status (4)

Country Link
US (2) US6268093B1 (de)
EP (1) EP1093017B1 (de)
JP (1) JP4841721B2 (de)
DE (1) DE60036443T2 (de)

Families Citing this family (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268093B1 (en) * 1999-10-13 2001-07-31 Applied Materials, Inc. Method for reticle inspection using aerial imaging
US6369888B1 (en) * 1999-11-17 2002-04-09 Applied Materials, Inc. Method and apparatus for article inspection including speckle reduction
US7120285B1 (en) * 2000-02-29 2006-10-10 Advanced Micro Devices, Inc. Method for evaluation of reticle image using aerial image simulator
US7095904B2 (en) * 2000-04-12 2006-08-22 Ultratech, Inc. Method and apparatus for determining best focus using dark-field imaging
US6829380B1 (en) * 2000-04-28 2004-12-07 Advanced Micro Devices, Inc. Optimization of OPC design factors utilizing an advanced algorithm on a low voltage CD-SEM system
US6735331B1 (en) * 2000-09-05 2004-05-11 Talia Technology Ltd. Method and apparatus for early detection and classification of retinal pathologies
US7136159B2 (en) * 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Excimer laser inspection system
US6513151B1 (en) * 2000-09-14 2003-01-28 Advanced Micro Devices, Inc. Full flow focus exposure matrix analysis and electrical testing for new product mask evaluation
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US7196782B2 (en) 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US20020120728A1 (en) * 2000-12-22 2002-08-29 Jason Braatz Method and apparatus for network-enablement of devices using device intelligence and network architecture
US6553559B2 (en) * 2001-01-05 2003-04-22 International Business Machines Corporation Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions
US6674522B2 (en) 2001-05-04 2004-01-06 Kla-Tencor Technologies Corporation Efficient phase defect detection system and method
US7072502B2 (en) * 2001-06-07 2006-07-04 Applied Materials, Inc. Alternating phase-shift mask inspection method and apparatus
DE10151406B4 (de) * 2001-10-18 2004-04-22 Infineon Technologies Ag Photomaske und Verfahren zu dessen Hertellung
JP2003130808A (ja) * 2001-10-29 2003-05-08 Hitachi Ltd 欠陥検査方法及びその装置
US6976240B2 (en) * 2001-11-14 2005-12-13 Synopsys Inc. Simulation using design geometry information
US6646281B1 (en) * 2001-12-28 2003-11-11 Kla-Tencor Corporation Differential detector coupled with defocus for improved phase defect sensitivity
US6906305B2 (en) * 2002-01-08 2005-06-14 Brion Technologies, Inc. System and method for aerial image sensing
US7236847B2 (en) 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
US6866559B2 (en) 2002-02-04 2005-03-15 Kla-Tencor Technologies Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad
JP3971937B2 (ja) * 2002-02-18 2007-09-05 株式会社日立ハイテクノロジーズ 露光条件監視方法およびその装置並びに半導体デバイスの製造方法
US6727512B2 (en) 2002-03-07 2004-04-27 Kla-Tencor Technologies Corporation Method and system for detecting phase defects in lithographic masks and semiconductor wafers
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
EP1523696B1 (de) * 2002-07-15 2016-12-21 KLA-Tencor Corporation Defektinspektionsmethoden, die das aufnehmen des projizierten maskenabbildes unter verschiedenen lithographischen prozessvariablen beinhalten
US6902855B2 (en) * 2002-07-15 2005-06-07 Kla-Tencor Technologies Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns
US6952256B2 (en) * 2002-08-30 2005-10-04 Kla-Tencor Technologies Corporation Optical compensation in high numerical aperture photomask inspection systems for inspecting photomasks through thick pellicles
US7046352B1 (en) * 2002-10-08 2006-05-16 Kla-Tencor Technologies Corporation Surface inspection system and method using summed light analysis of an inspection surface
US7027143B1 (en) * 2002-10-15 2006-04-11 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging at off-stepper wavelengths
US7379175B1 (en) * 2002-10-15 2008-05-27 Kla-Tencor Technologies Corp. Methods and systems for reticle inspection and defect review using aerial imaging
US7123356B1 (en) 2002-10-15 2006-10-17 Kla-Tencor Technologies Corp. Methods and systems for inspecting reticles using aerial imaging and die-to-database detection
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US7457736B2 (en) * 2002-11-21 2008-11-25 Synopsys, Inc. Automated creation of metrology recipes
US7152219B2 (en) * 2002-12-10 2006-12-19 Synopsys Inc. Reference image generation from subject image for photolithography mask analysis
DE10258371B4 (de) * 2002-12-12 2004-12-16 Infineon Technologies Ag Verfahren zur Inspektion von periodischen Gitterstrukturen auf Lithographiemasken
US7133119B1 (en) 2002-12-17 2006-11-07 Kla-Tencor Technologies Corp. Systems for simulating high NA and polarization effects in aerial images
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
US6892013B2 (en) 2003-01-15 2005-05-10 Negevtech Ltd. Fiber optical illumination system
US7486861B2 (en) * 2003-01-15 2009-02-03 Negevtech Ltd. Fiber optical illumination system
JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
US6950183B2 (en) * 2003-02-20 2005-09-27 International Business Machines Corporation Apparatus and method for inspection of photolithographic mask
US7180658B2 (en) 2003-02-21 2007-02-20 Kla-Tencor Technologies Corporation High performance catadioptric imaging system
US7053355B2 (en) 2003-03-18 2006-05-30 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP3960601B2 (ja) * 2003-03-19 2007-08-15 株式会社東芝 エッジ位置ずれ量の算出方法、検証方法、検証プログラム、及び検証システム。
DE10316821A1 (de) * 2003-04-03 2004-10-21 Infineon Technologies Ag Verfahren und Vorrichtung zur Korrektur von Abbildungsfehlern eines optischen Systems sowie eine Verwendung der Vorrichtung
JP4288415B2 (ja) * 2003-05-12 2009-07-01 日本電気株式会社 レチクル検査装置評価用欠陥データ作り込み方法、システム、装置、及びプログラム
US9002497B2 (en) 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
WO2005017997A1 (en) * 2003-08-01 2005-02-24 Applied Materials Israel, Ltd. Charged particle beam inspection
DE10337037B4 (de) * 2003-08-12 2006-02-23 Infineon Technologies Ag Verfahren zur Vermessung einer Belichtungsintensität auf einem Wafer
DE10345783A1 (de) * 2003-10-01 2005-04-21 Zeiss Carl Sms Gmbh Optisches Abbildungssystem
US7243331B2 (en) * 2004-01-28 2007-07-10 Applied Materials, Israel, Ltd. Method and system for controlling the quality of a reticle
KR101056142B1 (ko) * 2004-01-29 2011-08-10 케이엘에이-텐코 코포레이션 레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법
WO2005076077A2 (en) * 2004-02-05 2005-08-18 Koninklijke Philips Electronics N. V. Mask inspection apparatus and method
US9188974B1 (en) 2004-02-13 2015-11-17 Kla-Tencor Technologies Corp. Methods for improved monitor and control of lithography processes
WO2006006148A2 (en) * 2004-07-12 2006-01-19 Negevtech Ltd. Multi mode inspection method and apparatus
US20060012781A1 (en) * 2004-07-14 2006-01-19 Negevtech Ltd. Programmable spatial filter for wafer inspection
JP4904034B2 (ja) 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
JP4645113B2 (ja) * 2004-09-21 2011-03-09 日本電気株式会社 光検査方法及び光検査装置並びに光検査システム
US7095239B2 (en) * 2004-11-09 2006-08-22 Hitachi Global Storage Technologies Netherlands B.V. Method for detecting defects that exhibit repetitive patterns
US7400390B2 (en) * 2004-11-29 2008-07-15 Applied Materials, Israel, Ltd. Inspection system and a method for aerial reticle inspection
US7729529B2 (en) * 2004-12-07 2010-06-01 Kla-Tencor Technologies Corp. Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle
DE102005009536A1 (de) * 2005-02-25 2006-08-31 Carl Zeiss Sms Gmbh Verfahren zur Maskeninspektion im Rahmen des Maskendesigns und der Maskenherstellung
US7804993B2 (en) * 2005-02-28 2010-09-28 Applied Materials South East Asia Pte. Ltd. Method and apparatus for detecting defects in wafers including alignment of the wafer images so as to induce the same smear in all images
US7813541B2 (en) * 2005-02-28 2010-10-12 Applied Materials South East Asia Pte. Ltd. Method and apparatus for detecting defects in wafers
US20060262295A1 (en) * 2005-05-20 2006-11-23 Vistec Semiconductor Systems Gmbh Apparatus and method for inspecting a wafer
US7769225B2 (en) 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
KR101315237B1 (ko) * 2006-02-01 2013-10-07 어플라이드 머티리얼즈 이스라엘 리미티드 패턴의 파라미터에서의 변화를 평가하는 방법 및 시스템
US8031931B2 (en) 2006-04-24 2011-10-04 Applied Materials South East Asia Pte. Ltd. Printed fourier filtering in optical inspection tools
DE102007017630B4 (de) * 2006-05-16 2009-08-20 Vistec Semiconductor Systems Gmbh Verfahren zum Steigern der Messgenauigkeit beim Bestimmen der Koordinaten von Strukturen auf einem Substrat
US7970201B2 (en) 2006-07-31 2011-06-28 Applied Materials Israel, Ltd. Method and system for defect detection
US7719674B2 (en) * 2006-11-28 2010-05-18 Applied Materials South East Asia Pte. Ltd. Image splitting in optical inspection systems
US7714998B2 (en) * 2006-11-28 2010-05-11 Applied Materials South East Asia Pte. Ltd. Image splitting in optical inspection systems
TWI428686B (zh) * 2006-12-05 2014-03-01 Hoya Corp 光罩之檢查裝置、光罩之檢查方法、液晶裝置製造用光罩之製造方法以及圖案轉印方法
WO2008077100A2 (en) * 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8335369B2 (en) * 2007-02-28 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Mask defect analysis
US7564545B2 (en) * 2007-03-15 2009-07-21 Kla-Tencor Technologies Corp. Inspection methods and systems for lithographic masks
JP2008249921A (ja) * 2007-03-30 2008-10-16 Advanced Mask Inspection Technology Kk レチクル欠陥検査装置およびレチクル欠陥検査方法
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
JP5178079B2 (ja) * 2007-07-23 2013-04-10 株式会社日立ハイテクノロジーズ 欠陥検査方法およびその装置
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
US7975245B2 (en) 2007-08-20 2011-07-05 Kla-Tencor Corp. Computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects
JP5039495B2 (ja) * 2007-10-04 2012-10-03 ルネサスエレクトロニクス株式会社 マスクブランク検査方法、反射型露光マスクの製造方法、反射型露光方法および半導体集積回路の製造方法
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US8023102B2 (en) * 2008-04-18 2011-09-20 International Business Machines Corporation Test method for determining reticle transmission stability
JP6185693B2 (ja) * 2008-06-11 2017-08-23 ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法
KR101841897B1 (ko) 2008-07-28 2018-03-23 케이엘에이-텐코어 코오포레이션 웨이퍼 상의 메모리 디바이스 영역에서 검출된 결함들을 분류하기 위한 컴퓨터-구현 방법들, 컴퓨터-판독 가능 매체, 및 시스템들
DE102008048660B4 (de) * 2008-09-22 2015-06-18 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Strukturen auf Photolithographiemasken
NL2003678A (en) * 2008-12-17 2010-06-21 Asml Holding Nv Euv mask inspection system.
NL2003658A (en) * 2008-12-31 2010-07-01 Asml Holding Nv Euv mask inspection.
US8223327B2 (en) 2009-01-26 2012-07-17 Kla-Tencor Corp. Systems and methods for detecting defects on a wafer
US8605275B2 (en) * 2009-01-26 2013-12-10 Kla-Tencor Corp. Detecting defects on a wafer
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8327298B2 (en) * 2009-02-27 2012-12-04 Applied Materials Israel, Ltd. System and method for evaluating error sources associated with a mask
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
NL2004428A (en) * 2009-04-13 2010-10-14 Asml Holding Nv Mask inspection with fourier filtering and image compare.
DE102010009022B4 (de) * 2010-02-22 2019-10-24 Carl Zeiss Smt Gmbh Beleuchtungssystem sowie Projektionsobjektiv einer Maskeninspektionsanlage
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
TWI497055B (zh) * 2010-07-30 2015-08-21 Hoya Corp 透過率測定裝置、光罩之透過率檢查裝置、透過率檢查方法、光罩製造方法、圖案轉印方法、光罩製品
EP2434345B1 (de) * 2010-09-27 2013-07-03 Imec Verfahren und System zur Beurteilung der Flachheit von EUV Masken
US8810646B2 (en) * 2010-10-12 2014-08-19 Kla-Tencor Corporation Focus offset contamination inspection
US9576349B2 (en) * 2010-12-20 2017-02-21 Microsoft Technology Licensing, Llc Techniques for atmospheric and solar correction of aerial images
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9494856B1 (en) * 2011-06-07 2016-11-15 Hermes Microvision, Inc. Method and system for fast inspecting defects
DE102011078999A1 (de) 2011-07-12 2013-01-17 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Positionsbestimmung von Strukturen auf einer Maske für die Mikrolithographie
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8578309B2 (en) * 2012-01-31 2013-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Format conversion from value change dump (VCD) to universal verification methodology (UVM)
US8901897B2 (en) 2012-03-02 2014-12-02 International Business Machines Corporation Operating a DC-DC converter
US9281748B2 (en) 2012-03-02 2016-03-08 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US8984453B2 (en) 2012-06-28 2015-03-17 Applied Materials Israel, Ltd. Method and system for creation of binary spatial filters
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US8965102B2 (en) 2012-11-09 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for defect analysis of a substrate
US8754669B2 (en) * 2012-11-09 2014-06-17 International Business Machines Corporation Dynamic impedance matching for improved transient performance in a direct current-to-direct current (‘DC/DC’) converter for delivering a load to an electrical component
US20140151580A1 (en) * 2012-11-30 2014-06-05 Kla-Tencor Corporation Methods of using polished silicon wafer strips for euv homogenizer
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
WO2014149197A1 (en) 2013-02-01 2014-09-25 Kla-Tencor Corporation Detecting defects on a wafer using defect-specific and multi-channel information
US9607371B2 (en) 2013-04-01 2017-03-28 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
WO2014165547A1 (en) * 2013-04-01 2014-10-09 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
WO2014186476A2 (en) * 2013-05-14 2014-11-20 Kla-Tencor Corporation Integrated multi-pass inspection
DE102013212613B4 (de) 2013-06-28 2015-07-23 Carl Zeiss Sms Gmbh Beleuchtungsoptik für ein Metrologiesystem sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
US9236347B2 (en) 2013-10-09 2016-01-12 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating and manufacturing a DC-DC converter
US20150204799A1 (en) * 2014-01-21 2015-07-23 International Business Machines Corporation Computer-based defect root cause and yield impact determination in layered device manufacturing for products and services
US9218446B1 (en) * 2014-06-13 2015-12-22 Globalfoundries Inc. Optimization of integrated circuits for a reticle transmission process window using multiple fill cells
US9219422B1 (en) 2014-08-21 2015-12-22 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Operating a DC-DC converter including a coupled inductor formed of a magnetic core and a conductive sheet
KR102021450B1 (ko) 2014-09-22 2019-11-04 에이에스엠엘 네델란즈 비.브이. 공정 윈도우 식별자
US9379619B2 (en) 2014-10-21 2016-06-28 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Dividing a single phase pulse-width modulation signal into a plurality of phases
US9618539B2 (en) 2015-05-28 2017-04-11 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Sensing current of a DC-DC converter
JP6640482B2 (ja) 2015-07-31 2020-02-05 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
JP6527808B2 (ja) 2015-10-27 2019-06-05 株式会社ニューフレアテクノロジー 検査方法および検査装置
JP6759053B2 (ja) 2016-10-26 2020-09-23 株式会社ニューフレアテクノロジー 偏光イメージ取得装置、パターン検査装置、偏光イメージ取得方法、及びパターン検査方法
JP6917208B2 (ja) 2017-06-19 2021-08-11 株式会社ニューフレアテクノロジー 偏光イメージ取得装置、パターン検査装置、偏光イメージ取得方法、及びパターン検査方法
US10753729B2 (en) 2018-10-02 2020-08-25 Saudi Arabian Oil Company Photonic sensing analytical device
JP6815469B2 (ja) * 2019-11-13 2021-01-20 株式会社ニューフレアテクノロジー パターン検査装置及びパターン検査方法
CN113466259B (zh) * 2020-03-31 2023-02-17 上海微电子装备（集团）股份有限公司 金属掩模检测装置、光源标定方法及装置和维护标定方法
US11435298B2 (en) * 2020-07-24 2022-09-06 Hewlett Packard Enterprise Development Lp Circuit board anomaly indication
WO2022113852A1 (ja) * 2020-11-27 2022-06-02 富士フイルム株式会社 外観検査装置、外観検査方法、及び外観検査プログラム
CN113834818A (zh) * 2021-09-15 2021-12-24 江苏维普光电科技有限公司 基于频闪切换照明的掩膜版缺陷检测方法及系统
CN114264662B (zh) * 2021-12-10 2024-03-08 上海市东方海事工程技术有限公司 一种钢轨表面视觉检测方法和装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233523B1 (de) 1971-02-18 1977-08-29
JPS5371563A (en) 1976-12-08 1978-06-26 Hitachi Ltd Automatic inspection correcting method for mask
US4247203A (en) * 1978-04-03 1981-01-27 Kla Instrument Corporation Automatic photomask inspection system and apparatus
US4926489A (en) 1983-03-11 1990-05-15 Kla Instruments Corporation Reticle inspection system
US4595289A (en) * 1984-01-25 1986-06-17 At&T Bell Laboratories Inspection system utilizing dark-field illumination
JPS6235618A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 欠陥検査装置
US4922308A (en) 1986-06-27 1990-05-01 Hitachi, Ltd. Method of and apparatus for detecting foreign substance
US5210635A (en) 1989-04-17 1993-05-11 Dainippon Screen Mfg. Co., Ltd. Multibeam scanning system
US5576829A (en) 1990-10-08 1996-11-19 Nikon Corporation Method and apparatus for inspecting a phase-shifted mask
US5563702A (en) 1991-08-22 1996-10-08 Kla Instruments Corporation Automated photomask inspection apparatus and method
DE69208413T2 (de) 1991-08-22 1996-11-14 Kla Instr Corp Gerät zur automatischen Prüfung von Photomaske
JP2655215B2 (ja) 1991-11-18 1997-09-17 三菱電機株式会社 フォトマスクのパターン欠陥修正方法
JPH05296937A (ja) * 1992-04-23 1993-11-12 Nikon Corp 異物検査装置
JP2667940B2 (ja) 1992-04-27 1997-10-27 三菱電機株式会社 マスク検査方法およびマスク検出装置
JP3328323B2 (ja) 1992-07-20 2002-09-24 株式会社日立製作所 位相シフトマスクの製造方法および半導体集積回路装置の製造方法
JPH0728226A (ja) 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> 領域的イメージを測定する装置及び方法
KR0184992B1 (ko) 1995-01-26 1999-05-15 가네꼬 히사시 음극 선관 블랙 매트릭스층을 위한 구멍 크기 측정 시스템
US6148097A (en) 1995-06-07 2000-11-14 Asahi Kogaku Kogyo Kabushiki Kaisha Optical member inspecting apparatus and method of inspection thereof
US5744381A (en) 1995-03-13 1998-04-28 Kabushiki Kaisha Toshiba Method of inspecting a pattern formed on a sample for a defect, and an apparatus thereof
US5838433A (en) 1995-04-19 1998-11-17 Nikon Corporation Apparatus for detecting defects on a mask
IL118872A (en) * 1996-07-16 2000-06-01 Orbot Instr Ltd Optical inspection method and apparatus
US5795688A (en) 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
JPH1078648A (ja) 1996-09-04 1998-03-24 Toshiba Corp 位相シフトマスク検査装置
US6075883A (en) 1996-11-12 2000-06-13 Robotic Vision Systems, Inc. Method and system for imaging an object or pattern
US6025905A (en) 1996-12-31 2000-02-15 Cognex Corporation System for obtaining a uniform illumination reflectance image during periodic structured illumination
US6078738A (en) 1997-05-08 2000-06-20 Lsi Logic Corporation Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization
US6016357A (en) 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
US5965306A (en) 1997-10-15 1999-10-12 International Business Machines Corporation Method of determining the printability of photomask defects
US6072898A (en) 1998-01-16 2000-06-06 Beaty; Elwin M. Method and apparatus for three dimensional inspection of electronic components
US6091845A (en) 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6018392A (en) 1998-10-23 2000-01-25 Taiwan Semiconductor Manufacturing Company Apparatus and method for inspecting phase shifting masks
US6124924A (en) * 1998-12-24 2000-09-26 Applied Materials, Inc. Focus error correction method and apparatus
JP3848006B2 (ja) 1999-03-15 2006-11-22 株式会社東芝 マスク欠陥修正方法
JP3544892B2 (ja) 1999-05-12 2004-07-21 株式会社東京精密 外観検査方法及び装置
US6327033B1 (en) 1999-06-21 2001-12-04 International Business Machines Corporation Detection of phase defects on photomasks by differential imaging
US6466315B1 (en) * 1999-09-03 2002-10-15 Applied Materials, Inc. Method and system for reticle inspection by photolithography simulation
US6268093B1 (en) * 1999-10-13 2001-07-31 Applied Materials, Inc. Method for reticle inspection using aerial imaging
US6674522B2 (en) 2001-05-04 2004-01-06 Kla-Tencor Technologies Corporation Efficient phase defect detection system and method

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US6268093B1 (en) 2001-07-31
JP4841721B2 (ja) 2011-12-21
US7133548B2 (en) 2006-11-07
DE60036443T2 (de) 2008-06-26
EP1093017A3 (de) 2004-08-04
US20010019625A1 (en) 2001-09-06
EP1093017A2 (de) 2001-04-18
JP2001235853A (ja) 2001-08-31

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