DE3870665D1 - Anordnung und methode zum nachweis von punktfoermigen fehlern in integrierten schaltkreisen. - Google Patents

Anordnung und methode zum nachweis von punktfoermigen fehlern in integrierten schaltkreisen.

Info

Publication number
DE3870665D1
DE3870665D1 DE8888300410T DE3870665T DE3870665D1 DE 3870665 D1 DE3870665 D1 DE 3870665D1 DE 8888300410 T DE8888300410 T DE 8888300410T DE 3870665 T DE3870665 T DE 3870665T DE 3870665 D1 DE3870665 D1 DE 3870665D1
Authority
DE
Germany
Prior art keywords
faults
arrangement
integrated circuits
pointed
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888300410T
Other languages
English (en)
Inventor
Wojciech Maly
Michael E Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3870665D1 publication Critical patent/DE3870665D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8888300410T 1987-02-06 1988-01-19 Anordnung und methode zum nachweis von punktfoermigen fehlern in integrierten schaltkreisen. Expired - Fee Related DE3870665D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/011,729 US4835466A (en) 1987-02-06 1987-02-06 Apparatus and method for detecting spot defects in integrated circuits

Publications (1)

Publication Number Publication Date
DE3870665D1 true DE3870665D1 (de) 1992-06-11

Family

ID=21751724

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888300410T Expired - Fee Related DE3870665D1 (de) 1987-02-06 1988-01-19 Anordnung und methode zum nachweis von punktfoermigen fehlern in integrierten schaltkreisen.

Country Status (5)

Country Link
US (2) US4835466A (de)
EP (1) EP0281227B1 (de)
JP (1) JPS63196054A (de)
KR (1) KR880010472A (de)
DE (1) DE3870665D1 (de)

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US5857258A (en) * 1992-03-13 1999-01-12 The United States Of America As Represented By The Secretary Of Commerce Electrical test structure and method for measuring the relative locations of conductive features on an insulating substrate
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US5699282A (en) * 1994-04-28 1997-12-16 The United States Of America As Represented By The Secretary Of Commerce Methods and test structures for measuring overlay in multilayer devices
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JP3986571B2 (ja) * 1994-12-09 2007-10-03 日本テキサス・インスツルメンツ株式会社 歩留り予測装置とその方法
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US5670891A (en) * 1995-06-07 1997-09-23 Advanced Micro Devices, Inc. Structures to extract defect size information of poly and source-drain semiconductor devices and method for making the same
US6001663A (en) * 1995-06-07 1999-12-14 Advanced Micro Devices, Inc. Apparatus for detecting defect sizes in polysilicon and source-drain semiconductor devices and method for making the same
JPH0972870A (ja) * 1995-07-06 1997-03-18 Toyota Central Res & Dev Lab Inc 劣化検出方法及び劣化検出装置
JP3473218B2 (ja) * 1995-10-24 2003-12-02 日産自動車株式会社 半導体集積回路
US5712571A (en) * 1995-11-03 1998-01-27 Analog Devices, Inc. Apparatus and method for detecting defects arising as a result of integrated circuit processing
US5670883A (en) * 1995-11-20 1997-09-23 Analog Devices, Inc. Integrated circuit interlevel conductor defect characterization test structure and system
US6239604B1 (en) * 1996-10-04 2001-05-29 U.S. Philips Corporation Method for inspecting an integrated circuit by measuring a voltage drop in a supply line of sub-circuit thereof
US5942900A (en) * 1996-12-17 1999-08-24 Lexmark International, Inc. Method of fault detection in ink jet printhead heater chips
CH692162A5 (fr) * 1997-03-24 2002-02-28 Em Microelectronic Marin Sa Procédé de mesure pour détecter un court-circuit entre des spires d'une bobine intégrée sur une puce, et structure de circuit intégré adaptée à un tel procédé de mesure.
US5952836A (en) * 1997-04-28 1999-09-14 Mcdonnell Douglas Corporation Device and method for detecting workpiece fractures
US6111269A (en) * 1997-05-30 2000-08-29 Cypress Semiconductor Corp. Circuit, structure and method of testing a semiconductor, such as an integrated circuit
US5952674A (en) * 1998-03-18 1999-09-14 International Business Machines Corporation Topography monitor
US6297644B1 (en) 1999-03-04 2001-10-02 Advanced Micro Devices, Inc. Multipurpose defect test structure with switchable voltage contrast capability and method of use
US6268717B1 (en) * 1999-03-04 2001-07-31 Advanced Micro Devices, Inc. Semiconductor test structure with intentional partial defects and method of use
US6452412B1 (en) 1999-03-04 2002-09-17 Advanced Micro Devices, Inc. Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography
US6426516B1 (en) * 1999-08-16 2002-07-30 International Business Machines Corporation Kerf contact to silicon redesign for defect isolation and analysis
US6429452B1 (en) * 1999-08-17 2002-08-06 Advanced Micro Devices, Inc. Test structure and methodology for characterizing ion implantation in an integrated circuit fabrication process
US6261956B1 (en) * 1999-09-17 2001-07-17 Advanced Micro Devices, Inc. Modified product mask for bridging detection
US6978229B1 (en) 1999-11-18 2005-12-20 Pdf Solutions, Inc. Efficient method for modeling and simulation of the impact of local and global variation on integrated circuits
US6475871B1 (en) 1999-11-18 2002-11-05 Pdf Solutions, Inc. Passive multiplexor test structure for integrated circuit manufacturing
AU1770301A (en) 1999-11-18 2001-05-30 Pdf Solutions, Inc. System and method for product yield prediction using device and process neighborhood characterization vehicle
US6449749B1 (en) * 1999-11-18 2002-09-10 Pdf Solutions, Inc. System and method for product yield prediction
GB0030346D0 (en) * 2000-12-13 2001-01-24 Mitel Semiconductor Ltd Integrated circuit test structure
US7348594B2 (en) * 2001-08-31 2008-03-25 Pdf Solutions, Inc. Test structures and models for estimating the yield impact of dishing and/or voids
US6639396B2 (en) * 2001-09-26 2003-10-28 Compeq Manufacturing Company Limited Detecting structure formed on a PCB to detect unavailability of the lines
US6521910B1 (en) * 2001-11-02 2003-02-18 United Microelectronics Corp. Structure of a test key for monitoring salicide residue
TWI221014B (en) 2002-02-28 2004-09-11 Pdf Solutions Inc Back end of line clone test vehicle
US6873146B2 (en) * 2003-03-12 2005-03-29 Texas Instruments Incorporated Integrated circuit testing device and a method of use therefor
KR100555504B1 (ko) * 2003-06-27 2006-03-03 삼성전자주식회사 결함 크기를 검출할 수 있는 반도체 소자의 테스트 구조및 이를 이용한 테스트 방법
US7253436B2 (en) * 2003-07-25 2007-08-07 Matsushita Electric Industrial Co., Ltd. Resistance defect assessment device, resistance defect assessment method, and method for manufacturing resistance defect assessment device
JP2006038988A (ja) * 2004-07-23 2006-02-09 Seiko Epson Corp 電気光学装置、電子機器、および実装構造体
CN100505237C (zh) * 2004-09-23 2009-06-24 Nxp股份有限公司 半导体器件多层之间对准的模拟测量
JP2006108231A (ja) * 2004-10-01 2006-04-20 Denso Corp 半導体装置
US7088115B1 (en) * 2004-12-16 2006-08-08 Battelle Energy Alliance, Llc Electrochemical impedance spectroscopy system and methods for determining spatial locations of defects
US7749778B2 (en) * 2007-01-03 2010-07-06 International Business Machines Corporation Addressable hierarchical metal wire test methodology
US7592827B1 (en) * 2007-01-12 2009-09-22 Pdf Solutions, Inc. Apparatus and method for electrical detection and localization of shorts in metal interconnect lines
US20080244475A1 (en) * 2007-03-30 2008-10-02 Tseng Chin Lo Network based integrated circuit testline generator
US7782073B2 (en) * 2007-03-30 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. High accuracy and universal on-chip switch matrix testline
US7679384B2 (en) * 2007-06-08 2010-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Parametric testline with increased test pattern areas
CN101373756B (zh) * 2007-08-21 2010-09-29 中芯国际集成电路制造(上海)有限公司 金属制程工艺中凹陷现象的测试结构及方法
US8159254B2 (en) * 2008-02-13 2012-04-17 Infineon Technolgies Ag Crack sensors for semiconductor devices
US7825678B2 (en) * 2008-08-22 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Test pad design for reducing the effect of contact resistances
JP2010182932A (ja) * 2009-02-06 2010-08-19 Renesas Electronics Corp 半導体装置及び半導体装置の不良解析方法
US9252202B2 (en) * 2011-08-23 2016-02-02 Wafertech, Llc Test structure and method for determining overlay accuracy in semiconductor devices using resistance measurement
US9691671B2 (en) * 2014-08-28 2017-06-27 United Microelectronics Corp. Test key array
CN205959980U (zh) * 2016-08-26 2017-02-15 合肥鑫晟光电科技有限公司 膜层测试结构及阵列基板

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US4144493A (en) * 1976-06-30 1979-03-13 International Business Machines Corporation Integrated circuit test structure
US4386459A (en) * 1980-07-11 1983-06-07 Bell Telephone Laboratories, Incorporated Electrical measurement of level-to-level misalignment in integrated circuits
US4516071A (en) * 1982-07-26 1985-05-07 The United States Of America As Represented By The Administration Of The United States National Aeronautics And Space Administration Split-cross-bridge resistor for testing for proper fabrication of integrated circuits
US4542340A (en) * 1982-12-30 1985-09-17 Ibm Corporation Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
JPS6136951A (ja) * 1984-07-30 1986-02-21 Nec Corp 半導体装置
JPS61186846A (ja) * 1985-02-14 1986-08-20 Nec Corp 導電性塵埃センサ
US4835466A (en) * 1987-02-06 1989-05-30 Fairchild Semiconductor Corporation Apparatus and method for detecting spot defects in integrated circuits

Also Published As

Publication number Publication date
KR880010472A (ko) 1988-10-10
JPS63196054A (ja) 1988-08-15
US4835466A (en) 1989-05-30
EP0281227A1 (de) 1988-09-07
US5051690A (en) 1991-09-24
EP0281227B1 (de) 1992-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee