DE3855765D1 - Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents

Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE3855765D1
DE3855765D1 DE3855765T DE3855765T DE3855765D1 DE 3855765 D1 DE3855765 D1 DE 3855765D1 DE 3855765 T DE3855765 T DE 3855765T DE 3855765 T DE3855765 T DE 3855765T DE 3855765 D1 DE3855765 D1 DE 3855765D1
Authority
DE
Germany
Prior art keywords
thin
production
semiconductor device
silicon semiconductor
film silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3855765T
Other languages
English (en)
Other versions
DE3855765T2 (de
Inventor
Tadashi Serikawa
Seiichi Shirai
Akio Okamoto
Shirou Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3855765D1 publication Critical patent/DE3855765D1/de
Publication of DE3855765T2 publication Critical patent/DE3855765T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
DE3855765T 1987-07-27 1988-07-25 Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung Expired - Lifetime DE3855765T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18536187 1987-07-27
JP63167841A JPH07114184B2 (ja) 1987-07-27 1988-07-07 薄膜形シリコン半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE3855765D1 true DE3855765D1 (de) 1997-03-06
DE3855765T2 DE3855765T2 (de) 1997-08-14

Family

ID=26491765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855765T Expired - Lifetime DE3855765T2 (de) 1987-07-27 1988-07-25 Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5132754A (de)
EP (1) EP0301463B1 (de)
JP (1) JPH07114184B2 (de)
DE (1) DE3855765T2 (de)

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US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JPH01302769A (ja) * 1988-05-30 1989-12-06 Seikosha Co Ltd 逆スタガー型シリコン薄膜トランジスタの製造方法
JP2700277B2 (ja) 1990-06-01 1998-01-19 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US6008078A (en) 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5210050A (en) * 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
TW237562B (de) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7154147B1 (en) * 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JP3103385B2 (ja) * 1991-01-25 2000-10-30 株式会社東芝 ポリシリコン薄膜半導体装置
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5289030A (en) 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5930608A (en) 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
JP2794499B2 (ja) * 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US6964890B1 (en) * 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3065825B2 (ja) * 1992-10-21 2000-07-17 株式会社半導体エネルギー研究所 レーザー処理方法
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JPH07176745A (ja) * 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 半導体素子
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645378B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7071041B2 (en) * 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4045731B2 (ja) * 2000-09-25 2008-02-13 株式会社日立製作所 薄膜半導体素子の製造方法
US7151017B2 (en) * 2001-01-26 2006-12-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4718700B2 (ja) * 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW541584B (en) 2001-06-01 2003-07-11 Semiconductor Energy Lab Semiconductor film, semiconductor device and method for manufacturing same
JP4141741B2 (ja) * 2001-06-01 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6994083B2 (en) * 2001-12-21 2006-02-07 Trudell Medical International Nebulizer apparatus and method
JP4326756B2 (ja) 2002-07-04 2009-09-09 株式会社半導体エネルギー研究所 ドーピング方法、ドーピング装置の制御システム、およびドーピング装置
US7442631B2 (en) * 2005-02-10 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Doping method and method of manufacturing field effect transistor
US7791172B2 (en) * 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR101042636B1 (ko) * 2008-10-15 2011-06-20 김용환 에너지빔 조사를 이용한 실리콘 박막 제조방법

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JPH0793258B2 (ja) * 1985-12-04 1995-10-09 富士通株式会社 導電体膜の再結晶化方法

Also Published As

Publication number Publication date
JPH01103825A (ja) 1989-04-20
DE3855765T2 (de) 1997-08-14
US5132754A (en) 1992-07-21
JPH07114184B2 (ja) 1995-12-06
EP0301463A2 (de) 1989-02-01
EP0301463B1 (de) 1997-01-22
EP0301463A3 (de) 1989-09-20

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