DE3850157D1 - Photoelektrische Umwandlungsanordnung. - Google Patents

Photoelektrische Umwandlungsanordnung.

Info

Publication number
DE3850157D1
DE3850157D1 DE3850157T DE3850157T DE3850157D1 DE 3850157 D1 DE3850157 D1 DE 3850157D1 DE 3850157 T DE3850157 T DE 3850157T DE 3850157 T DE3850157 T DE 3850157T DE 3850157 D1 DE3850157 D1 DE 3850157D1
Authority
DE
Germany
Prior art keywords
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3850157T
Other languages
English (en)
Other versions
DE3850157T2 (de
Inventor
Yukio Takasaki
Kazutaka Tsuji
Tatsuo Makishima
Tadaaki Hirai
Sachio Ishioka
Tatsuro Kawamura
Keiichi Shidara
Eikyu Hiruma
Kenkichi Tanioka
Junichi Yamazaki
Kenji Sameshima
Hirokazu Sanhaitsu M Matsubara
Kazuhisa Taketoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Broadcasting Corp
Original Assignee
Hitachi Ltd
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62065634A external-priority patent/JPS63233574A/ja
Priority claimed from JP62065633A external-priority patent/JPH088075B2/ja
Application filed by Hitachi Ltd, Japan Broadcasting Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3850157D1 publication Critical patent/DE3850157D1/de
Publication of DE3850157T2 publication Critical patent/DE3850157T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System including AIVBIV compounds or alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE3850157T 1987-03-23 1988-02-10 Photoelektrische Umwandlungsanordnung. Expired - Lifetime DE3850157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62065634A JPS63233574A (ja) 1987-03-23 1987-03-23 光電変換装置
JP62065633A JPH088075B2 (ja) 1987-03-23 1987-03-23 光電変換装置

Publications (2)

Publication Number Publication Date
DE3850157D1 true DE3850157D1 (de) 1994-07-21
DE3850157T2 DE3850157T2 (de) 1995-02-09

Family

ID=26406770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850157T Expired - Lifetime DE3850157T2 (de) 1987-03-23 1988-02-10 Photoelektrische Umwandlungsanordnung.

Country Status (3)

Country Link
US (1) US4980736A (de)
EP (1) EP0283699B1 (de)
DE (1) DE3850157T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888521A (en) * 1986-07-04 1989-12-19 Hitachi Ltd. Photoconductive device and method of operating the same
US5233265A (en) * 1986-07-04 1993-08-03 Hitachi, Ltd. Photoconductive imaging apparatus
US5196702A (en) * 1987-10-21 1993-03-23 Hitachi, Ltd. Photo-sensor and method for operating the same
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
US6031250A (en) * 1995-12-20 2000-02-29 Advanced Technology Materials, Inc. Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
US6586332B1 (en) * 2001-10-16 2003-07-01 Lsi Logic Corporation Deep submicron silicide blocking
WO2003100123A1 (en) * 2002-05-23 2003-12-04 UNIVERSITé DE SHERBROOKE Ceramic thin film on various substrates, and process for producing same
JP2005012049A (ja) * 2003-06-20 2005-01-13 Shimadzu Corp 放射線検出器およびそれを備えた放射線撮像装置
JP2005019543A (ja) * 2003-06-24 2005-01-20 Shimadzu Corp 二次元半導体検出器および二次元撮像装置
CN102945887B (zh) * 2012-12-07 2015-09-09 东莞市五峰科技有限公司 一种光导半导体开关结构

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230091B2 (de) * 1972-07-03 1977-08-05
JPS52144992A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Light receiving element
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
FR2408915A1 (fr) * 1977-11-10 1979-06-08 Thomson Csf Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation
US4329699A (en) * 1979-03-26 1982-05-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
US4258375A (en) * 1979-04-09 1981-03-24 Massachusetts Institute Of Technology Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication
US4490573A (en) * 1979-12-26 1984-12-25 Sera Solar Corporation Solar cells
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface
JPS5721876A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
EP0070509B2 (de) * 1981-07-17 1993-05-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorpher Halbleiter und photovoltaische Einrichtung aus amorphem Silizium
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
JPS58204527A (ja) * 1982-05-24 1983-11-29 Semiconductor Energy Lab Co Ltd 繊維構造を有する半導体およびその作製方法
JPS5926154A (ja) * 1982-08-04 1984-02-10 日本セメント株式会社 破砕器
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
JPH065765B2 (ja) * 1982-12-23 1994-01-19 株式会社半導体エネルギ−研究所 光電変換装置
FR2545275B1 (fr) * 1983-04-27 1987-03-06 Rca Corp Photodetecteur tandem
JPS59204283A (ja) * 1983-05-06 1984-11-19 Agency Of Ind Science & Technol アモルフアス半導体光導電素子
JPS59227168A (ja) * 1983-06-08 1984-12-20 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
ATE70665T1 (de) * 1984-02-14 1992-01-15 Energy Conversion Devices Inc Verfahren zur herstellung eines fotoleitfaehigen elementes.
US4680607A (en) * 1984-05-11 1987-07-14 Sanyo Electric Co., Ltd. Photovoltaic cell
EP0192473A3 (de) * 1985-02-19 1988-04-06 Exxon Research And Engineering Company Amorpher Photoempfänger mit grosser Empfindlichkeit im langen Wellenlängenbereich
EP0194329B1 (de) * 1985-03-13 1989-07-12 Kanegafuchi Chemical Industry Co., Ltd. Mehrschichtiges, photoleitendes Material
JPS61222383A (ja) * 1985-03-28 1986-10-02 Shizuoka Univ 非晶質半導体撮像装置
FR2585183B1 (fr) * 1985-07-19 1987-10-09 Thomson Csf Procede de fabrication d'un detecteur d'image lumineuse et detecteur matriciel bidimensionnel obtenu par ce procede
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
US4718947A (en) * 1986-04-17 1988-01-12 Solarex Corporation Superlattice doped layers for amorphous silicon photovoltaic cells
FR2597662B1 (fr) * 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
US4761680A (en) * 1986-09-29 1988-08-02 General Electric Company Photodetector
JPH07120768B2 (ja) * 1987-01-14 1995-12-20 株式会社日立製作所 光電変換装置

Also Published As

Publication number Publication date
DE3850157T2 (de) 1995-02-09
US4980736A (en) 1990-12-25
EP0283699B1 (de) 1994-06-15
EP0283699A2 (de) 1988-09-28
EP0283699A3 (en) 1989-10-04

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Legal Events

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