DE3684351D1 - Programmierbarer festwertspeicher mit reduzierter programmierspeisespannung. - Google Patents

Programmierbarer festwertspeicher mit reduzierter programmierspeisespannung.

Info

Publication number
DE3684351D1
DE3684351D1 DE8686105377T DE3684351T DE3684351D1 DE 3684351 D1 DE3684351 D1 DE 3684351D1 DE 8686105377 T DE8686105377 T DE 8686105377T DE 3684351 T DE3684351 T DE 3684351T DE 3684351 D1 DE3684351 D1 DE 3684351D1
Authority
DE
Germany
Prior art keywords
fixed value
value storage
programming voltage
reduced programming
programmable fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686105377T
Other languages
English (en)
Inventor
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3684351D1 publication Critical patent/DE3684351D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
DE8686105377T 1985-04-18 1986-04-18 Programmierbarer festwertspeicher mit reduzierter programmierspeisespannung. Expired - Lifetime DE3684351D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8275685 1985-04-18

Publications (1)

Publication Number Publication Date
DE3684351D1 true DE3684351D1 (de) 1992-04-23

Family

ID=13783281

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686105377T Expired - Lifetime DE3684351D1 (de) 1985-04-18 1986-04-18 Programmierbarer festwertspeicher mit reduzierter programmierspeisespannung.

Country Status (4)

Country Link
US (1) US4761764A (de)
EP (1) EP0199305B1 (de)
JP (1) JPH0770230B2 (de)
DE (1) DE3684351D1 (de)

Families Citing this family (53)

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Publication number Priority date Publication date Assignee Title
US5050124A (en) * 1986-09-30 1991-09-17 Kabushiki Kaisha Toshiba Semiconductor memory having load transistor circuit
JPS63251999A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp 半導体記憶装置
DE3884820T2 (de) * 1987-07-29 1994-01-27 Toshiba Kawasaki Kk Nichtflüchtige Halbleiterspeichereinrichtung.
JPH0754636B2 (ja) * 1987-07-30 1995-06-07 日本電気株式会社 不揮発性半導体記憶装置
JPH081759B2 (ja) * 1987-11-24 1996-01-10 株式会社東芝 不揮発性メモリ
DE3888294T2 (de) * 1987-11-25 1994-06-23 Nec Corp Eingangsschaltung, die in eine Halbleiteranlage eingegliedert ist.
US4858187A (en) * 1988-02-01 1989-08-15 Texas Instruments Incorporated Programming implementation circuit
JPH0793018B2 (ja) * 1988-03-14 1995-10-09 株式会社東芝 不揮発性半導体メモリ
US4829203A (en) * 1988-04-20 1989-05-09 Texas Instruments Incorporated Integrated programmable bit circuit with minimal power requirement
GB2219901B (en) * 1988-06-17 1992-10-07 Motorola Inc Eprom programming
US4823318A (en) * 1988-09-02 1989-04-18 Texas Instruments Incorporated Driving circuitry for EEPROM memory cell
US5265052A (en) * 1989-07-20 1993-11-23 Texas Instruments Incorporated Wordline driver circuit for EEPROM memory cell
EP0961289B1 (de) * 1991-12-09 2002-10-02 Fujitsu Limited Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JPH08293197A (ja) * 1995-04-21 1996-11-05 Nec Corp 不揮発性半導体記憶装置
US6058934A (en) * 1995-11-02 2000-05-09 Chiron Diagnostics Corporation Planar hematocrit sensor incorporating a seven-electrode conductivity measurement cell
FR2753829B1 (fr) * 1996-09-24 1998-11-13 Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6665769B2 (en) * 2001-04-05 2003-12-16 Saifun Semiconductors Ltd. Method and apparatus for dynamically masking an N-bit memory array having individually programmable cells
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
CN1838323A (zh) 2005-01-19 2006-09-27 赛芬半导体有限公司 可预防固定模式编程的方法
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
EP1746645A3 (de) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7245535B2 (en) * 2005-09-21 2007-07-17 Actel Corporation Non-volatile programmable memory cell for programmable logic array
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
US8331084B2 (en) 2010-05-13 2012-12-11 General Electric Company Apparatus for securing electronic equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4095281A (en) * 1976-03-04 1978-06-13 Rca Corporation Random access-erasable read only memory cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4142251A (en) * 1977-11-21 1979-02-27 Hewlett-Packard Company Field programmable read-only-memory
CH625075A5 (de) * 1978-02-22 1981-08-31 Centre Electron Horloger
JPS5753152A (en) * 1980-09-16 1982-03-30 Nec Ic Microcomput Syst Ltd Inverter circuit
JPS5850700A (ja) * 1981-09-21 1983-03-25 Hitachi Ltd Ｅｐｒｏｍ書込み回路
US4464221A (en) * 1983-01-28 1984-08-07 Dynachem Corporation Automatic laminator
JPH0666115B2 (ja) * 1983-09-26 1994-08-24 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0199305A2 (de) 1986-10-29
US4761764A (en) 1988-08-02
EP0199305B1 (de) 1992-03-18
JPH0770230B2 (ja) 1995-07-31
EP0199305A3 (en) 1988-12-14
JPS6231097A (ja) 1987-02-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP