DE3679434D1 - Verfahren um ein polymeres material widerstandsfaehig gegen ein sauerstoffhaltiges plasma zu machen. - Google Patents

Verfahren um ein polymeres material widerstandsfaehig gegen ein sauerstoffhaltiges plasma zu machen.

Info

Publication number
DE3679434D1
DE3679434D1 DE8686103208T DE3679434T DE3679434D1 DE 3679434 D1 DE3679434 D1 DE 3679434D1 DE 8686103208 T DE8686103208 T DE 8686103208T DE 3679434 T DE3679434 T DE 3679434T DE 3679434 D1 DE3679434 D1 DE 3679434D1
Authority
DE
Germany
Prior art keywords
make
polymeric material
oxygen plasma
material resistant
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686103208T
Other languages
English (en)
Inventor
Edward Darko Babich
Michael Hatzakis
Scott Laurence Jacobs
Juri Rostyslav Parasczcak
Jane Margaret Shaw
David Frank Witman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3679434D1 publication Critical patent/DE3679434D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
DE8686103208T 1985-03-19 1986-03-11 Verfahren um ein polymeres material widerstandsfaehig gegen ein sauerstoffhaltiges plasma zu machen. Expired - Fee Related DE3679434D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/713,509 US4782008A (en) 1985-03-19 1985-03-19 Plasma-resistant polymeric material, preparation thereof, and use thereof

Publications (1)

Publication Number Publication Date
DE3679434D1 true DE3679434D1 (de) 1991-07-04

Family

ID=24866418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686103208T Expired - Fee Related DE3679434D1 (de) 1985-03-19 1986-03-11 Verfahren um ein polymeres material widerstandsfaehig gegen ein sauerstoffhaltiges plasma zu machen.

Country Status (7)

Country Link
US (1) US4782008A (de)
EP (1) EP0198215B1 (de)
JP (1) JPS61219034A (de)
AU (2) AU576049B2 (de)
BR (1) BR8600996A (de)
CA (1) CA1266148A (de)
DE (1) DE3679434D1 (de)

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US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4702792A (en) * 1985-10-28 1987-10-27 International Business Machines Corporation Method of forming fine conductive lines, patterns and connectors
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
JPS6377052A (ja) * 1986-09-18 1988-04-07 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション レジスト組成物
US4867838A (en) * 1986-10-27 1989-09-19 International Business Machines Corporation Planarization through silylation
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
CA1286424C (en) * 1987-01-12 1991-07-16 William C. Mccolgin Bilayer lithographic process
EP0283546B1 (de) * 1987-03-27 1993-07-14 Ibm Deutschland Gmbh Verfahren zum Herstellen beliebig geformter mikromechanischer Bauteile aus planparallelen Platten aus Polymermaterial oder beliebig geformter Duchführungsöffnungen in denselben
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
JPS6479743A (en) * 1987-09-22 1989-03-24 Nippon Telegraph & Telephone Pattern forming method by dry developing
NL8801255A (nl) * 1988-05-16 1989-12-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4882008A (en) * 1988-07-08 1989-11-21 Texas Instruments Incorporated Dry development of photoresist
JPH02158737A (ja) * 1988-10-31 1990-06-19 Internatl Business Mach Corp <Ibm> レリーフパターンの作成およびその用途
US4999280A (en) * 1989-03-17 1991-03-12 International Business Machines Corporation Spray silylation of photoresist images
US5275920A (en) * 1989-04-24 1994-01-04 Siemens Aktiengesellschaft Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
EP0394739A3 (de) * 1989-04-24 1991-04-03 Siemens Aktiengesellschaft Verfahren zur masshaltigen Strukturübertragung mit einem Zweilagenresist
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5128223A (en) * 1990-06-15 1992-07-07 Hoechst Celanese Corp. Polymeric direct imaging holographic compositions
JPH04149441A (ja) * 1990-10-12 1992-05-22 Mitsubishi Electric Corp パターン形成方法
JPH05150459A (ja) * 1991-05-24 1993-06-18 Nippon Paint Co Ltd レジストパターンの形成方法
US5262273A (en) * 1992-02-25 1993-11-16 International Business Machines Corporation Photosensitive reactive ion etch barrier
US5215861A (en) * 1992-03-17 1993-06-01 International Business Machines Corporation Thermographic reversible photoresist
US5270151A (en) * 1992-03-17 1993-12-14 International Business Machines Corporation Spin on oxygen reactive ion etch barrier
KR0170253B1 (ko) * 1992-11-18 1999-03-20 김광호 실리레이션을 이용한 사진식각방법
DE69607619T2 (de) * 1995-06-22 2000-11-16 Yuri Gudimenko Oberflächenmodifikation von polymeren und kohlenstoffhaltigen materialen
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
WO1997033199A1 (en) * 1996-03-06 1997-09-12 Clariant International, Ltd. A process for obtaining a lift-off imaging profile
US5756239A (en) * 1996-12-12 1998-05-26 Eastman Kodak Company Method of forming a color filter array with improved resolution
JP4030625B2 (ja) * 1997-08-08 2008-01-09 Ａｚエレクトロニックマテリアルズ株式会社 アミン残基含有ポリシラザン及びその製造方法
US6599829B2 (en) 1998-11-25 2003-07-29 Texas Instruments Incorporated Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
EP1054296A3 (de) * 1999-04-30 2002-03-06 Fuji Photo Film Co., Ltd. Verfahren zur Herstellung feiner Strukturen
US6645677B1 (en) * 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
WO2005085369A1 (en) * 2004-03-08 2005-09-15 Cytec Surface Specialties, S.A. Radiation-curable compositions for inks

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GB1225754A (de) * 1967-06-09 1971-03-24
JPS494851B1 (de) * 1968-04-26 1974-02-04
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
JPS5143125A (ja) * 1974-10-09 1976-04-13 Fuji Photo Film Co Ltd Kankoseifukushazairyo
JPS527719A (en) * 1975-07-09 1977-01-21 Toshiba Corp Photoresist
US4125650A (en) * 1977-08-08 1978-11-14 International Business Machines Corporation Resist image hardening process
US4173684A (en) * 1977-09-06 1979-11-06 The Mead Corporation Production of novel metal modified novolak resins and their use in pressure sensitive papers
US4289473A (en) * 1980-01-04 1981-09-15 Holdt J W Von Mold gate permitting the introduction of stiff molding compound into a mold chamber
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
JPS57139585A (en) * 1981-02-13 1982-08-28 Kao Corp Color concentrating agent
JPS57157241A (en) * 1981-03-25 1982-09-28 Oki Electric Ind Co Ltd Formation of resist material and its pattern
US4396704A (en) * 1981-04-22 1983-08-02 Bell Telephone Laboratories, Incorporated Solid state devices produced by organometallic plasma developed resists
JPS57202535A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of negative resist pattern
JPS57202533A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Formation of pattern
DE3377597D1 (en) * 1982-04-12 1988-09-08 Nippon Telegraph & Telephone Method for forming micropattern
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4489200A (en) * 1983-04-11 1984-12-18 General Electric Company One-component RTV silicone rubber compositions with good self-bonding properties to acrylate plastics
JPS59202636A (ja) * 1983-05-04 1984-11-16 Hitachi Ltd 微細パタ−ン形成方法
US4430153A (en) * 1983-06-30 1984-02-07 International Business Machines Corporation Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
GB8403698D0 (en) * 1984-02-13 1984-03-14 British Telecomm Semiconductor device fabrication
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4521274A (en) * 1984-05-24 1985-06-04 At&T Bell Laboratories Bilevel resist
JPS6129214A (ja) * 1984-07-19 1986-02-10 Nec Corp 電流帰還形トランジスタ駆動回路
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
US4551418A (en) * 1985-02-19 1985-11-05 International Business Machines Corporation Process for preparing negative relief images with cationic photopolymerization
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof

Also Published As

Publication number Publication date
AU576049B2 (en) 1988-08-11
AU5260586A (en) 1986-09-25
EP0198215B1 (de) 1991-05-29
US4782008A (en) 1988-11-01
JPS61219034A (ja) 1986-09-29
EP0198215A2 (de) 1986-10-22
AU2012588A (en) 1988-11-10
CA1266148A (en) 1990-02-20
AU595127B2 (en) 1990-03-22
BR8600996A (pt) 1986-11-18
EP0198215A3 (en) 1988-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee