DE3677034D1 - Methode und geraet zum testen eines integrierten elektronischen bauteils. - Google Patents

Methode und geraet zum testen eines integrierten elektronischen bauteils.

Info

Publication number
DE3677034D1
DE3677034D1 DE8686301721T DE3677034T DE3677034D1 DE 3677034 D1 DE3677034 D1 DE 3677034D1 DE 8686301721 T DE8686301721 T DE 8686301721T DE 3677034 T DE3677034 T DE 3677034T DE 3677034 D1 DE3677034 D1 DE 3677034D1
Authority
DE
Germany
Prior art keywords
testing
electronic component
integrated electronic
integrated
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686301721T
Other languages
English (en)
Inventor
Masahiro Yoshizawa
Akira Kikuchi
Kou Wada
Minpei Fujinami
Nobuo Shimazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60048070A external-priority patent/JPH07105429B2/ja
Priority claimed from JP60129937A external-priority patent/JPH0648703B2/ja
Priority claimed from JP60177448A external-priority patent/JPH0682717B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3677034D1 publication Critical patent/DE3677034D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
DE8686301721T 1985-03-11 1986-03-11 Methode und geraet zum testen eines integrierten elektronischen bauteils. Expired - Fee Related DE3677034D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60048070A JPH07105429B2 (ja) 1985-03-11 1985-03-11 電子デバイスの試験方法
JP60129937A JPH0648703B2 (ja) 1985-06-17 1985-06-17 電子デバイスの試験方法およびその試験装置
JP60177448A JPH0682717B2 (ja) 1985-08-12 1985-08-12 電子デバイスの試験装置

Publications (1)

Publication Number Publication Date
DE3677034D1 true DE3677034D1 (de) 1991-02-28

Family

ID=27293178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686301721T Expired - Fee Related DE3677034D1 (de) 1985-03-11 1986-03-11 Methode und geraet zum testen eines integrierten elektronischen bauteils.

Country Status (3)

Country Link
US (2) US4980639A (de)
EP (1) EP0196804B1 (de)
DE (1) DE3677034D1 (de)

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JPH03101041A (ja) * 1989-09-14 1991-04-25 Hitachi Ltd 電子ビームによる電圧測定装置
JPH07119716B2 (ja) * 1990-04-19 1995-12-20 株式会社島津製作所 表面分析装置
JP2754096B2 (ja) * 1991-03-05 1998-05-20 日本電子テクニクス株式会社 電子線による試料表面の状態測定装置
DE4210394C2 (de) * 1991-03-28 1996-09-12 Fraunhofer Ges Forschung Vorrichtung zur Messung von Magnetfeldern und Strömen
US5404110A (en) * 1993-03-25 1995-04-04 International Business Machines Corporation System using induced current for contactless testing of wiring networks
US5614833A (en) * 1994-10-25 1997-03-25 International Business Machines Corporation Objective lens with large field deflection system and homogeneous large area secondary electron extraction field
US5602489A (en) * 1994-12-02 1997-02-11 Alcedo Switch potential electron beam substrate tester
US6111269A (en) * 1997-05-30 2000-08-29 Cypress Semiconductor Corp. Circuit, structure and method of testing a semiconductor, such as an integrated circuit
US6163159A (en) * 1997-06-02 2000-12-19 Advantest Corp Charged particle beam test system
US6072320A (en) * 1997-07-30 2000-06-06 Verkuil; Roger L. Product wafer junction leakage measurement using light and eddy current
US5972725A (en) * 1997-12-11 1999-10-26 Advanced Micro Devices, Inc. Device analysis for face down chip
JP3682174B2 (ja) * 1998-11-04 2005-08-10 株式会社東芝 半導体装置の耐圧波形自動分類システム及び半導体装置の耐圧波形自動分類方法
US6897440B1 (en) * 1998-11-30 2005-05-24 Fab Solutions, Inc. Contact hole standard test device
JP3558964B2 (ja) * 1999-07-23 2004-08-25 シャープ株式会社 半導体集積回路の検査装置及びその検査方法
JP2001093455A (ja) * 1999-09-21 2001-04-06 Nikon Corp 電子ビーム装置
JP3749107B2 (ja) * 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
CN100382272C (zh) * 1999-11-05 2008-04-16 拓普康株式会社 半导体器件检查装置
JP3877952B2 (ja) * 1999-11-30 2007-02-07 ファブソリューション株式会社 デバイス検査装置および検査方法
US6359451B1 (en) 2000-02-11 2002-03-19 Image Graphics Incorporated System for contactless testing of printed circuit boards
WO2001058558A2 (en) 2000-02-14 2001-08-16 Eco 3 Max Inc. Process for removing volatile organic compounds from an air stream and apparatus therefor
JP3874996B2 (ja) * 2000-05-30 2007-01-31 ファブソリューション株式会社 デバイス検査方法および装置
EP1162645A3 (de) * 2000-06-09 2007-09-26 Jeol Ltd. Probeninspektionsgerät
JP4034500B2 (ja) * 2000-06-19 2008-01-16 株式会社日立製作所 半導体装置の検査方法及び検査装置、及びそれを用いた半導体装置の製造方法
JP3913454B2 (ja) * 2000-08-29 2007-05-09 株式会社リガク 試料の表面リーク電流の測定方法
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
US6664541B2 (en) * 2001-10-01 2003-12-16 Kla Tencor Technologies Corporation Methods and apparatus for defect localization
JP3913555B2 (ja) * 2002-01-17 2007-05-09 ファブソリューション株式会社 膜厚測定方法および膜厚測定装置
US7012438B1 (en) * 2002-07-10 2006-03-14 Kla-Tencor Technologies Corp. Methods and systems for determining a property of an insulating film
US20040119492A1 (en) * 2002-11-01 2004-06-24 Stefan Schneidewind Method and apparatus for testing movement-sensitive substrates
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
US6976234B2 (en) * 2003-01-13 2005-12-13 Credence Systems Corporation Apparatus and method for measuring characteristics of dynamic electrical signals in integrated circuits
US6897665B2 (en) * 2003-09-06 2005-05-24 Taiwan Semiconductor Manufacturing Co., Ltd In-situ electron beam induced current detection
US7157895B2 (en) * 2003-11-04 2007-01-02 Hewlett-Packard Development Company, L.P. Systems and methods for generating a current
US7170056B2 (en) * 2004-06-21 2007-01-30 Applied Materials, Israel, Ltd. Methodology and apparatus for leakage detection
US7583087B2 (en) * 2005-02-22 2009-09-01 Integrated Device Technology, Inc. In-situ monitor of process and device parameters in integrated circuits
US7594149B2 (en) * 2005-02-22 2009-09-22 Integrated Device Technology, Inc. In-situ monitor of process and device parameters in integrated circuits
US20070109003A1 (en) * 2005-08-19 2007-05-17 Kla-Tencor Technologies Corp. Test Pads, Methods and Systems for Measuring Properties of a Wafer
US20070294072A1 (en) * 2006-06-16 2007-12-20 Ming-Shiahn Tsai Testing model
US7525325B1 (en) * 2006-12-18 2009-04-28 Sandia Corporation System and method for floating-substrate passive voltage contrast
JP5103050B2 (ja) * 2007-04-06 2012-12-19 株式会社日立ハイテクノロジーズ 電子線応用装置
KR102032071B1 (ko) 2015-09-02 2019-10-14 가부시키가이샤 히다치 하이테크놀로지즈 회로 검사 방법 및 시료 검사 장치

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Publication number Priority date Publication date Assignee Title
US3531716A (en) * 1967-06-16 1970-09-29 Agency Ind Science Techn Method of testing an electronic device by use of an electron beam
DE2207546A1 (de) * 1972-02-18 1973-08-23 Ibm Deutschland Verfahren zum pruefen des elektrischen durchganges
JPS4823385A (de) * 1971-07-28 1973-03-26
US3796947A (en) * 1973-02-27 1974-03-12 Bell Telephone Labor Inc Electron beam testing of film integrated circuits
US3995216A (en) * 1975-04-28 1976-11-30 International Business Machines Corporation Technique for measuring surface states in metal-insulator-semiconductor structures
US4011449A (en) * 1975-11-05 1977-03-08 Ibm Corporation Apparatus for measuring the beam current of charged particle beam
DE3036734A1 (de) * 1980-09-29 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung von widerstaenden und kapazitaeten von elektronischen bauelementen
US4621232A (en) * 1981-05-26 1986-11-04 International Business Machines Corporation Inspection of unsintered single layer or multilayer ceramics using a broad area electrical contacting structure
DE3235461A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur kontaktlosen pruefung eines objekts, insbesondere von mikroverdrahtungen, mit einer korpuskularstrahl-sonde
JPS60136323A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 絶縁体膜の検査方法
JPS60140730A (ja) * 1983-12-27 1985-07-25 Nec Corp 半導体素子製造工程における不良要因の検出法
JPS60224239A (ja) * 1984-04-20 1985-11-08 Fujitsu Ltd 薄膜の欠陥検出方法
EP0196531B1 (de) * 1985-03-28 1991-01-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Verfahren zur indirekten Bestimmung der Intensitätsverteilung der in einem Korpuskularstrahl-Messgerät erzeugten Korpuskularstrahlpulse
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding
JPH0682718B2 (ja) * 1985-08-12 1994-10-19 日本電信電話株式会社 電子デバイスの試験装置およびその使用方法

Also Published As

Publication number Publication date
EP0196804B1 (de) 1991-01-23
US4980639A (en) 1990-12-25
EP0196804A1 (de) 1986-10-08
US5097204A (en) 1992-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee