DE3574997D1 - Pulsierendes plasmaverfahren. - Google Patents

Pulsierendes plasmaverfahren.

Info

Publication number
DE3574997D1
DE3574997D1 DE8585301251T DE3574997T DE3574997D1 DE 3574997 D1 DE3574997 D1 DE 3574997D1 DE 8585301251 T DE8585301251 T DE 8585301251T DE 3574997 T DE3574997 T DE 3574997T DE 3574997 D1 DE3574997 D1 DE 3574997D1
Authority
DE
Germany
Prior art keywords
plasma process
pulsating plasma
pulse repetition
gas
pulsating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585301251T
Other languages
English (en)
Inventor
Rudolf August Herbert Heinecke
Suresh Mishrilal Ojha
Ian Paul Llewellyn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Application granted granted Critical
Publication of DE3574997D1 publication Critical patent/DE3574997D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Absorbent Articles And Supports Therefor (AREA)
  • Drying Of Semiconductors (AREA)
  • Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
  • Luminescent Compositions (AREA)
DE8585301251T 1984-03-03 1985-02-25 Pulsierendes plasmaverfahren. Expired - Lifetime DE3574997D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8405647 1984-03-03

Publications (1)

Publication Number Publication Date
DE3574997D1 true DE3574997D1 (de) 1990-02-01

Family

ID=10557570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301251T Expired - Lifetime DE3574997D1 (de) 1984-03-03 1985-02-25 Pulsierendes plasmaverfahren.

Country Status (6)

Country Link
US (1) US4824690A (de)
EP (1) EP0154483B1 (de)
JP (1) JPH0726212B2 (de)
AT (1) ATE49023T1 (de)
DE (1) DE3574997D1 (de)
GB (1) GB2155862B (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2291888B (en) * 1984-06-08 1996-06-26 Barr & Stroud Ltd Optical coating
JPS62216637A (ja) * 1986-03-19 1987-09-24 Anelva Corp プラズマ処理装置
DE3629000C1 (de) * 1986-08-27 1987-10-29 Nukem Gmbh Verfahren und Vorrichtung zum Ausbilden einer Schicht durch plasmachemischen Prozess
DE3700633C2 (de) * 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
DE3841730C2 (de) * 1988-12-10 1997-06-19 Widia Gmbh Verfahren zum Beschichten eines metallischen Grundkörpers mit einem nichtleitenden Beschichtungsmaterial
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
JP3042127B2 (ja) * 1991-09-02 2000-05-15 富士電機株式会社 酸化シリコン膜の製造方法および製造装置
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
US5442160A (en) * 1992-01-22 1995-08-15 Avco Corporation Microwave fiber coating apparatus
US5525392A (en) * 1992-12-10 1996-06-11 International Business Machines Corporation Magnetic recording medium having a fluorinated polymeric protective layer formed by an ion beam
US5380566A (en) * 1993-06-21 1995-01-10 Applied Materials, Inc. Method of limiting sticking of body to susceptor in a deposition treatment
KR100326488B1 (ko) * 1993-06-21 2002-06-20 조셉 제이. 스위니 플라즈마화학기상증착법
US5399388A (en) * 1994-02-28 1995-03-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin films on substrates at low temperatures
DE4429380C1 (de) * 1994-08-15 1996-04-25 Biotronik Mess & Therapieg Verfahren zur Herstellung einer nichtkollabierenden intravasalen Gefäßprothese (Stent)
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US5543605A (en) * 1995-04-13 1996-08-06 Avco Corporation Microwave fiber coating apparatus
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
KR970064327A (ko) * 1996-02-27 1997-09-12 모리시다 요이치 고주파 전력 인가장치, 플라즈마 발생장치, 플라즈마 처리장치, 고주파 전력 인가방법, 플라즈마 발생방법 및 플라즈마 처리방법
DE19640528A1 (de) * 1996-10-01 1998-04-02 Roland Dr Gesche Verfahren, Vorrichtung und Behälter für die Behandlung von Teilen mit vakuumtechnischen Prozessen
US5849628A (en) * 1996-12-09 1998-12-15 Micron Technology, Inc. Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US5985375A (en) * 1998-09-03 1999-11-16 Micron Technology, Inc. Method for pulsed-plasma enhanced vapor deposition
US6355571B1 (en) 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US20010049181A1 (en) 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
DE19911046B4 (de) * 1999-03-12 2006-10-26 Robert Bosch Gmbh Plasmaverfahren
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
DE60041341D1 (de) * 1999-08-17 2009-02-26 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100615410B1 (ko) * 2000-08-02 2006-08-25 인터내셔널 비지네스 머신즈 코포레이션 저 유전 상수 다상 물질 및 그 증착 방법
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
PT1253216E (pt) * 2001-04-27 2004-04-30 Europ Economic Community Metodo e aparelhagem para tratamento sequencial por plasma
US7199328B2 (en) * 2001-08-29 2007-04-03 Tokyo Electron Limited Apparatus and method for plasma processing
GB0211354D0 (en) * 2002-05-17 2002-06-26 Surface Innovations Ltd Atomisation of a precursor into an excitation medium for coating a remote substrate
GB0212848D0 (en) * 2002-06-01 2002-07-17 Surface Innovations Ltd Introduction of liquid/solid slurry into an exciting medium
US8216986B2 (en) 2003-10-15 2012-07-10 Kajal Parekh Low-phosphorous lubricant additive
US8216982B2 (en) 2003-10-15 2012-07-10 Kajal Parekh Low-phosphorous lubricants
US20070193935A1 (en) * 2006-01-13 2007-08-23 Platinum Research Organization, L.P. System and method for providing continuous, in-situ, antiwear chemistry to engine oil using a filter system
KR20080082775A (ko) * 2007-03-09 2008-09-12 삼성전자주식회사 액정표시장치와 그 제조방법
WO2011163592A2 (en) 2010-06-24 2011-12-29 Board Of Regents, The University Of Texas System Alkylphoshorofluoridothioates having low wear volume and methods for synthesizing and using same
WO2013169779A1 (en) 2012-05-07 2013-11-14 Board Of Regents, The University Of Texas System Synergistic mixtures of ionic liquids with other ionic liquids and/or with ashless thiophosphates for antiwear and/or friction reduction applications

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108900A (en) * 1959-04-13 1963-10-29 Cornelius A Papp Apparatus and process for producing coatings on metals
GB1582231A (en) * 1976-08-13 1981-01-07 Nat Res Dev Application of a layer of carbonaceous material to a surface
JPS55155034A (en) * 1979-05-21 1980-12-03 Shin Etsu Chem Co Ltd Plasma treatment of surface of polyvinyl chloride resin molded article
DE3010314C2 (de) * 1980-03-18 1982-01-07 Beerwald, Hans, Dr.Rer.Nat., 5370 Kall Verfahren zur innenbeschichtung von elektrisch nicht leitfähigen Rohren mittels Gasentladungen
GB2079267B (en) * 1980-07-11 1983-10-26 Ass Elect Ind Manufacture of optical fibre preforms
GB2105729B (en) * 1981-09-15 1985-06-12 Itt Ind Ltd Surface processing of a substrate material
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
US4401507A (en) * 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
JPS59128281A (ja) * 1982-12-29 1984-07-24 信越化学工業株式会社 炭化けい素被覆物の製造方法
DE3326020A1 (de) * 1983-07-20 1985-01-31 Schott Glaswerke, 6500 Mainz Plasmaverfahren zur chemischen behandlung von objekten und substanzen
US4510172A (en) * 1984-05-29 1985-04-09 International Business Machines Corporation Technique for thin insulator growth

Also Published As

Publication number Publication date
JPH0726212B2 (ja) 1995-03-22
ATE49023T1 (de) 1990-01-15
EP0154483A2 (de) 1985-09-11
GB8505319D0 (en) 1985-04-03
GB2155862A (en) 1985-10-02
EP0154483B1 (de) 1989-12-27
GB2155862B (en) 1987-06-24
EP0154483A3 (en) 1986-08-20
JPS60215777A (ja) 1985-10-29
US4824690A (en) 1989-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NORTHERN TELECOM LTD., MONTREAL, QUEBEC, CA

8328 Change in the person/name/address of the agent

Free format text: KOCH, G., DIPL.-ING. HAIBACH, T., DIPL.-PHYS. DR.RER.NAT. FELDKAMP, R., DIPL.-ING., PAT.-ANWAELTE, 80339 MUENCHEN