DE3377597D1 - Method for forming micropattern - Google Patents

Method for forming micropattern

Info

Publication number
DE3377597D1
DE3377597D1 DE8383103348T DE3377597T DE3377597D1 DE 3377597 D1 DE3377597 D1 DE 3377597D1 DE 8383103348 T DE8383103348 T DE 8383103348T DE 3377597 T DE3377597 T DE 3377597T DE 3377597 D1 DE3377597 D1 DE 3377597D1
Authority
DE
Germany
Prior art keywords
forming micropattern
micropattern
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383103348T
Other languages
English (en)
Inventor
Toshiaki Tamamura
Saburo Imamura
Masao Morita
Osamu Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57059612A external-priority patent/JPS58176938A/ja
Priority claimed from JP58021731A external-priority patent/JPS59148335A/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3377597D1 publication Critical patent/DE3377597D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer
DE8383103348T 1982-04-12 1983-04-06 Method for forming micropattern Expired DE3377597D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57059612A JPS58176938A (ja) 1982-04-12 1982-04-12 微細パタ−ン形成法
JP58021731A JPS59148335A (ja) 1983-02-14 1983-02-14 微細パタ−ン形成法

Publications (1)

Publication Number Publication Date
DE3377597D1 true DE3377597D1 (en) 1988-09-08

Family

ID=26358819

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383103348T Expired DE3377597D1 (en) 1982-04-12 1983-04-06 Method for forming micropattern

Country Status (3)

Country Link
US (1) US4426247A (de)
EP (1) EP0091651B1 (de)
DE (1) DE3377597D1 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215867A (en) * 1983-09-16 1993-06-01 At&T Bell Laboratories Method with gas functionalized plasma developed layer
US5059513A (en) * 1983-11-01 1991-10-22 Hoechst Celanese Corporation Photochemical image process of positive photoresist element with maleimide copolymer
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
JPS60501777A (ja) * 1983-11-02 1985-10-17 ヒユ−ズ・エアクラフト・カンパニ− 二酸化ケイ素系グラフト重合リソグラフマスク
US4481049A (en) * 1984-03-02 1984-11-06 At&T Bell Laboratories Bilevel resist
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4532005A (en) * 1984-05-21 1985-07-30 At&T Bell Laboratories Device lithography using multi-level resist systems
US4521274A (en) * 1984-05-24 1985-06-04 At&T Bell Laboratories Bilevel resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
US4551418A (en) * 1985-02-19 1985-11-05 International Business Machines Corporation Process for preparing negative relief images with cationic photopolymerization
US4612270A (en) * 1985-03-14 1986-09-16 Rca Corporation Two-layer negative resist
US4981909A (en) * 1985-03-19 1991-01-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
JPH0640221B2 (ja) * 1985-03-29 1994-05-25 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション ネガティブ・レジスト組成物を使用したリソグラフィ方法
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
JPS6221151A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd パタ−ン形成方法
US4751170A (en) * 1985-07-26 1988-06-14 Nippon Telegraph And Telephone Corporation Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US5389496A (en) * 1987-03-06 1995-02-14 Rohm And Haas Company Processes and compositions for electroless metallization
US4847183A (en) * 1987-09-09 1989-07-11 Hewlett-Packard Company High contrast optical marking method for polished surfaces
US5250388A (en) * 1988-05-31 1993-10-05 Westinghouse Electric Corp. Production of highly conductive polymers for electronic circuits
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US5079131A (en) * 1988-08-29 1992-01-07 Shipley Company Inc. Method of forming positive images through organometallic treatment of negative acid hardening cross-linked photoresist formulations
US5053318A (en) * 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
US5213917A (en) * 1989-05-18 1993-05-25 Shipley Company Inc. Plasma processing with metal mask integration
US5166038A (en) * 1989-07-27 1992-11-24 International Business Machines Corporation Etch resistant pattern formation via interfacial silylation process
DE3937308C1 (de) * 1989-11-09 1991-03-21 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
DE69227137T2 (de) * 1991-02-28 1999-04-22 Texas Instruments Inc Verfahren zur Herstellung einer Markierung
US5112434A (en) * 1991-03-20 1992-05-12 Shipley Company Inc. Method for patterning electroless metal on a substrate followed by reactive ion etching
US5262392A (en) * 1991-07-15 1993-11-16 Eastman Kodak Company Method for patterning metallo-organic percursor film and method for producing a patterned ceramic film and film products
FI93680C (fi) * 1992-05-07 1995-05-10 Outokumpu Instr Oy Ohutkalvon tukirakenne ja menetelmä sen valmistamiseksi
US5366852A (en) * 1992-09-21 1994-11-22 Shipley Company, Inc. Methods for treating photoresists
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
JPH11237519A (ja) * 1998-02-24 1999-08-31 Oki Electric Ind Co Ltd 高分子パターンの形成方法
WO1999052018A1 (en) * 1998-04-07 1999-10-14 Euv Limited Liability Corporation Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
KR100335070B1 (ko) * 1999-04-21 2002-05-03 백승준 압축 성형 기법을 이용한 미세 패턴 형성 방법
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP1303792B1 (de) 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System Hoch auflösende ausrichtungsverfahren und entsprechende systeme für die präge-lithographie
EP2270592B1 (de) * 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Verfahren zur Bildung einer Struktur auf einem Substrat
AU2001280980A1 (en) * 2000-08-01 2002-02-13 Board Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
JP2004523906A (ja) * 2000-10-12 2004-08-05 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 室温かつ低圧マイクロおよびナノ転写リソグラフィのためのテンプレート
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US7166404B2 (en) * 2001-03-02 2007-01-23 Ricoh Company, Ltd. Carrier for developer for developing electrostatic latent image, image forming method using same and image forming apparatus using same
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
CN100347608C (zh) * 2001-09-25 2007-11-07 米卢塔技术株式会社 利用毛细作用力在基体上形成微型图案的方法
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US6737283B2 (en) * 2002-08-29 2004-05-18 Micron Technology, Inc. Method to isolate device layer edges through mechanical spacing
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7186656B2 (en) * 2004-05-21 2007-03-06 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7323417B2 (en) * 2004-09-21 2008-01-29 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US7282241B2 (en) * 2003-04-22 2007-10-16 International Business Machines Corporation Patterned, high surface area substrate with hydrophilic/hydrophobic contrast, and method of use
US7112617B2 (en) * 2003-04-22 2006-09-26 International Business Machines Corporation Patterned substrate with hydrophilic/hydrophobic contrast, and method of use
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US7241395B2 (en) * 2004-09-21 2007-07-10 Molecular Imprints, Inc. Reverse tone patterning on surfaces having planarity perturbations
US7252777B2 (en) * 2004-09-21 2007-08-07 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7041604B2 (en) * 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
WO2006060757A2 (en) * 2004-12-01 2006-06-08 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US7256131B2 (en) * 2005-07-19 2007-08-14 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US7482280B2 (en) * 2005-08-15 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a lithography pattern
US7259102B2 (en) * 2005-09-30 2007-08-21 Molecular Imprints, Inc. Etching technique to planarize a multi-layer structure
US7767570B2 (en) 2006-03-22 2010-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy vias for damascene process
US7759253B2 (en) * 2006-08-07 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and material for forming a double exposure lithography pattern
WO2008100330A2 (en) * 2006-07-26 2008-08-21 President And Fellows Of Harvard College Surface modification of polymer surface using ion beam irradiation
FR2926162B1 (fr) * 2008-01-03 2017-09-01 Centre Nat De La Rech Scient - Cnrs Procede de modification localisee de l'energie de surface d'un substrat
US20090277582A1 (en) * 2008-05-09 2009-11-12 E. I. Du Pont De Nemours And Company Thick film recycling method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE560986A (de) * 1956-09-21
FR1526934A (fr) * 1966-12-01 1968-05-31 Commissariat Energie Atomique Procédé de préparation des silicones hydrophiles par greffage radiochimique
CA1051707A (en) * 1973-10-25 1979-04-03 Michael Gulla Photoresist film with non-photosensitive resist layer
FR2389922B1 (de) * 1977-05-03 1981-08-28 Thomson Csf
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4370405A (en) 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye

Also Published As

Publication number Publication date
EP0091651A2 (de) 1983-10-19
EP0091651A3 (en) 1984-10-17
US4426247A (en) 1984-01-17
EP0091651B1 (de) 1988-08-03

Similar Documents

Publication Publication Date Title
DE3377597D1 (en) Method for forming micropattern
DE3267373D1 (en) Method for forming cakes
DE3361971D1 (en) Method for producing clinker
ZA834243B (en) Method for making partially separated multibags
GB8325811D0 (en) Reaction method
GB8309777D0 (en) Apparatus for producing average magnetic well
GB8332072D0 (en) Currency-dispensing method
PL240826A1 (en) Apparatus for producing castings
DE3373093D1 (en) Process for producing aminophenyl-beta-hydroxyethylsulfone
ZA836151B (en) Post-exposure process
DE3471334D1 (en) Method for forming structures
GB2117674B (en) Multicoat forming method
GB2126508B (en) Forming apparatus
HUT35271A (en) Process for producing antracycline-glycosides
GB8312478D0 (en) Casting method
YU43557B (en) Process for obtaining new spiro-3-hetero azolines
GB8320259D0 (en) Positioning method
GB2128997B (en) Process for producing alkylangelicins
IL70220A0 (en) Process for 1-oxa-beta-lactams
GB8300414D0 (en) Apparatus for making blanks
DE3369678D1 (en) Process for producing benzophenone-azines
DE3362699D1 (en) Process for producing alpha-acetoxypropionaldehyde
GB2129346B (en) Apparatus for producing castings
DE3368607D1 (en) Improved process for making thiobiscarbamates
DE3370616D1 (en) Process for producing phenylacetones

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee