DE3280027D1 - Semiconductor laser with conductive current mask - Google Patents

Semiconductor laser with conductive current mask

Info

Publication number
DE3280027D1
DE3280027D1 DE8282902872T DE3280027T DE3280027D1 DE 3280027 D1 DE3280027 D1 DE 3280027D1 DE 8282902872 T DE8282902872 T DE 8282902872T DE 3280027 T DE3280027 T DE 3280027T DE 3280027 D1 DE3280027 D1 DE 3280027D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
conductive current
current mask
mask
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282902872T
Other languages
English (en)
Inventor
Larry Allen Coldren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3280027D1 publication Critical patent/DE3280027D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
DE8282902872T 1981-09-28 1982-08-30 Semiconductor laser with conductive current mask Expired DE3280027D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/306,287 US4445218A (en) 1981-09-28 1981-09-28 Semiconductor laser with conductive current mask
PCT/US1982/001171 WO1983001155A1 (en) 1981-09-28 1982-08-30 Semiconductor laser with conductive current mask

Publications (1)

Publication Number Publication Date
DE3280027D1 true DE3280027D1 (en) 1989-12-21

Family

ID=23184626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282902872T Expired DE3280027D1 (en) 1981-09-28 1982-08-30 Semiconductor laser with conductive current mask

Country Status (8)

Country Link
US (1) US4445218A (de)
EP (1) EP0089980B1 (de)
JP (1) JPS58501567A (de)
CA (1) CA1194971A (de)
DE (1) DE3280027D1 (de)
GB (1) GB2106706B (de)
IT (1) IT1152641B (de)
WO (1) WO1983001155A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
US4679199A (en) * 1985-09-23 1987-07-07 Gte Laboratories Incorporated High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance
JP2539368B2 (ja) * 1985-12-20 1996-10-02 株式会社日立製作所 半導体レ−ザ装置
JPS62257783A (ja) * 1986-04-30 1987-11-10 Sharp Corp 半導体レ−ザ素子
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
DE3713045A1 (de) * 1987-04-16 1988-10-27 Siemens Ag Verfahren zur herstellung einer laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung
US5224115A (en) * 1991-07-17 1993-06-29 The United States Of America As Represented By The Secretary Of The Air Force Distributed feedback laser implemented using an active lateral grating
JP2705409B2 (ja) * 1991-11-21 1998-01-28 三菱電機株式会社 半導体分布帰還形レーザ装置
US5338394A (en) * 1992-05-01 1994-08-16 Alliedsignal Inc. Method for etching indium based III-V compound semiconductors
JP3204474B2 (ja) * 1993-03-01 2001-09-04 キヤノン株式会社 利得結合分布帰還型半導体レーザとその作製方法
US5509093A (en) * 1993-10-13 1996-04-16 Micron Optics, Inc. Temperature compensated fiber fabry-perot filters
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
FR2715251B1 (fr) * 1994-01-20 1996-04-05 Christophe Kazmierski Structure semiconductrice à réseau de diffraction virtuel.
FR2716303B1 (fr) * 1994-02-11 1996-04-05 Franck Delorme Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement.
KR0146713B1 (ko) * 1994-09-30 1998-11-02 양승택 상부 표면방출 마이크로 레이저의 제조방법
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
CA2533225C (en) 2006-01-19 2016-03-22 Technologies Ltrim Inc. A tunable semiconductor component provided with a current barrier
JP5865860B2 (ja) * 2013-03-25 2016-02-17 株式会社東芝 半導体装置
DE102020108941B4 (de) * 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420517A1 (de) * 1974-04-27 1975-11-06 Licentia Gmbh Halbleiterbauelement
JPS571912B2 (de) * 1974-05-31 1982-01-13
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
US3959808A (en) * 1974-09-19 1976-05-25 Northern Electric Company Limited Variable stripe width semiconductor laser
US4152711A (en) * 1976-04-01 1979-05-01 Mitsubishi Denki Kabuchiki Kaisha Semiconductor controlled luminescent device
JPS52147087A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor light emitting display device
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
JPS606553B2 (ja) * 1977-08-30 1985-02-19 富士通株式会社 半導体発光装置
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4236122A (en) * 1978-04-26 1980-11-25 Bell Telephone Laboratories, Incorporated Mesa devices fabricated on channeled substrates
JPS56104488A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor laser element

Also Published As

Publication number Publication date
GB2106706A (en) 1983-04-13
GB2106706B (en) 1985-07-10
EP0089980A4 (de) 1986-05-14
EP0089980B1 (de) 1989-11-15
WO1983001155A1 (en) 1983-03-31
JPS58501567A (ja) 1983-09-16
EP0089980A1 (de) 1983-10-05
IT8223442A0 (it) 1982-09-24
IT1152641B (it) 1987-01-07
CA1194971A (en) 1985-10-08
US4445218A (en) 1984-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee