DE3069207D1 - Method for preventing the corrosion of al and al alloys - Google Patents

Method for preventing the corrosion of al and al alloys

Info

Publication number
DE3069207D1
DE3069207D1 DE8080102980T DE3069207T DE3069207D1 DE 3069207 D1 DE3069207 D1 DE 3069207D1 DE 8080102980 T DE8080102980 T DE 8080102980T DE 3069207 T DE3069207 T DE 3069207T DE 3069207 D1 DE3069207 D1 DE 3069207D1
Authority
DE
Germany
Prior art keywords
alloys
corrosion
preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080102980T
Other languages
English (en)
Inventor
Shinya Iida
Kazuyoshi Ueki
Tatsumi Mizutani
Hideo Komatsu
Kado Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3069207D1 publication Critical patent/DE3069207D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
DE8080102980T 1979-05-28 1980-05-28 Method for preventing the corrosion of al and al alloys Expired DE3069207D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6503079A JPS55158275A (en) 1979-05-28 1979-05-28 Corrosion preventing method for al and al alloy

Publications (1)

Publication Number Publication Date
DE3069207D1 true DE3069207D1 (en) 1984-10-25

Family

ID=13275163

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080102980T Expired DE3069207D1 (en) 1979-05-28 1980-05-28 Method for preventing the corrosion of al and al alloys

Country Status (4)

Country Link
US (1) US4308089A (de)
EP (1) EP0019915B1 (de)
JP (1) JPS55158275A (de)
DE (1) DE3069207D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380488A (en) * 1980-10-14 1983-04-19 Branson International Plasma Corporation Process and gas mixture for etching aluminum
JPS57204186A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Electrode processing method for magnetic reluctance element
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
US4351696A (en) * 1981-10-28 1982-09-28 Fairchild Camera & Instrument Corp. Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
US4370195A (en) * 1982-03-25 1983-01-25 Rca Corporation Removal of plasma etching residues
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
JPS59189633A (ja) * 1983-04-13 1984-10-27 Fujitsu Ltd 半導体装置の製造方法
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
US4552783A (en) * 1984-11-05 1985-11-12 General Electric Company Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
JP2663704B2 (ja) * 1990-10-30 1997-10-15 日本電気株式会社 Ａｌ合金の腐食防止法
US5126008A (en) * 1991-05-03 1992-06-30 Applied Materials, Inc. Corrosion-free aluminum etching process for fabricating an integrated circuit structure
US5200031A (en) * 1991-08-26 1993-04-06 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps
WO1995021458A1 (en) * 1994-02-03 1995-08-10 Applied Materials, Inc. Stripping, passivation and corrosion inhibition of semiconductor substrates
KR100268640B1 (ko) * 1996-01-22 2000-10-16 모리시타 요이찌 알루미늄합금막의 드라이에칭방법과,그 방법에 사용하는 에칭용 가스
US6010603A (en) 1997-07-09 2000-01-04 Applied Materials, Inc. Patterned copper etch for micron and submicron features, using enhanced physical bombardment
US20010049181A1 (en) 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
US6355571B1 (en) 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
US20040018715A1 (en) * 2002-07-25 2004-01-29 Applied Materials, Inc. Method of cleaning a surface of a material layer
US7229911B2 (en) 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
SG10201908213VA (en) * 2012-02-24 2019-10-30 California Inst Of Techn Method and system for graphene formation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499857A (en) * 1975-09-18 1978-02-01 Standard Telephones Cables Ltd Glow discharge etching
IT1203089B (it) * 1976-03-03 1989-02-15 Int Plasma Corp Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy

Also Published As

Publication number Publication date
US4308089A (en) 1981-12-29
JPS55158275A (en) 1980-12-09
EP0019915B1 (de) 1984-09-19
EP0019915A1 (de) 1980-12-10
JPS5617434B2 (de) 1981-04-22

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee