DE3065113D1 - Electroplating with a selective increase of the deposition rate - Google Patents
Electroplating with a selective increase of the deposition rateInfo
- Publication number
- DE3065113D1 DE3065113D1 DE8080101626T DE3065113T DE3065113D1 DE 3065113 D1 DE3065113 D1 DE 3065113D1 DE 8080101626 T DE8080101626 T DE 8080101626T DE 3065113 T DE3065113 T DE 3065113T DE 3065113 D1 DE3065113 D1 DE 3065113D1
- Authority
- DE
- Germany
- Prior art keywords
- electroplating
- deposition rate
- selective increase
- selective
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/67—Electroplating to repair workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S204/00—Chemistry: electrical and wave energy
- Y10S204/07—Current distribution within the bath
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/037,075 US4217183A (en) | 1979-05-08 | 1979-05-08 | Method for locally enhancing electroplating rates |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3065113D1 true DE3065113D1 (en) | 1983-11-10 |
Family
ID=21892306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080101626T Expired DE3065113D1 (en) | 1979-05-08 | 1980-03-27 | Electroplating with a selective increase of the deposition rate |
Country Status (7)
Country | Link |
---|---|
US (1) | US4217183A (de) |
EP (1) | EP0018500B1 (de) |
JP (1) | JPS591797B2 (de) |
BR (1) | BR8002800A (de) |
CA (1) | CA1159790A (de) |
DE (1) | DE3065113D1 (de) |
ES (1) | ES8103785A1 (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2513273B1 (fr) * | 1981-07-24 | 1990-02-09 | Inoue Japax Res | Procede et appareil d'electro-deposition d'un metal sur une piece par utilisation d'un faisceau laser ou un faisceau lumineux thermique analogue |
JPS591693A (ja) * | 1982-06-28 | 1984-01-07 | Inoue Japax Res Inc | メツキ方法 |
JPS5864368A (ja) * | 1981-10-12 | 1983-04-16 | Inoue Japax Res Inc | 化学メツキ方法 |
US4361641A (en) * | 1981-11-10 | 1982-11-30 | University Patents, Inc. | Electrolytic surface modulation |
NL8200561A (nl) * | 1982-02-15 | 1983-09-01 | Philips Nv | Werkwijze voor het neerslaan van een metaal. |
DE3380413D1 (en) * | 1982-04-27 | 1989-09-21 | Richardson Chemical Co | Process for selectively depositing a nickel-boron coating over a metallurgy pattern on a dielectric substrate and products produced thereby |
US4432855A (en) * | 1982-09-30 | 1984-02-21 | International Business Machines Corporation | Automated system for laser mask definition for laser enhanced and conventional plating and etching |
US4497692A (en) * | 1983-06-13 | 1985-02-05 | International Business Machines Corporation | Laser-enhanced jet-plating and jet-etching: high-speed maskless patterning method |
JPS60149782A (ja) * | 1984-01-17 | 1985-08-07 | Inoue Japax Res Inc | 選択的メツキ方法 |
JPS60149783A (ja) * | 1984-01-17 | 1985-08-07 | Inoue Japax Res Inc | 選択的メツキ方法 |
US4608138A (en) * | 1984-02-16 | 1986-08-26 | Mitsubishi Denki Kabushiki Kaisha | Electrolytic method and apparatus |
JPS60197879A (ja) * | 1984-03-22 | 1985-10-07 | Nippon Steel Corp | 耐食性のすぐれたステンレス鋼の製造法 |
US4519876A (en) * | 1984-06-28 | 1985-05-28 | Thermo Electron Corporation | Electrolytic deposition of metals on laser-conditioned surfaces |
EP0168771A1 (de) * | 1984-07-17 | 1986-01-22 | Siemens Aktiengesellschaft | Verfahren zur gezielten Erzeugung von lateralen Dotierungs-gradienten in scheibenförmigen Siliziumkristallen für Halbleiterbauelemente |
US4578157A (en) * | 1984-10-02 | 1986-03-25 | Halliwell Michael J | Laser induced deposition of GaAs |
US4569728A (en) * | 1984-11-01 | 1986-02-11 | The United States Of America As Represented By The Secretary Of The Air Force | Selective anodic oxidation of semiconductors for pattern generation |
JPS61199095A (ja) * | 1985-02-28 | 1986-09-03 | Furukawa Electric Co Ltd:The | 部分メツキ方法 |
US4578155A (en) * | 1985-03-19 | 1986-03-25 | Halliwell Michael J | Laser induced deposition on polymeric substrates |
GB2188774B (en) * | 1986-04-02 | 1990-10-31 | Westinghouse Electric Corp | Method of forming a conductive pattern on a semiconductor surface |
US5182230A (en) * | 1988-07-25 | 1993-01-26 | International Business Machines Corporation | Laser methods for circuit repair on integrated circuits and substrates |
US5171709A (en) * | 1988-07-25 | 1992-12-15 | International Business Machines Corporation | Laser methods for circuit repair on integrated circuits and substrates |
US4919971A (en) * | 1988-09-23 | 1990-04-24 | International Business Machines Corporation | Self-induced repairing of conductor lines |
US5300208A (en) * | 1989-08-14 | 1994-04-05 | International Business Machines Corporation | Fabrication of printed circuit boards using conducting polymer |
US4994154A (en) * | 1990-02-06 | 1991-02-19 | International Business Machines Corporation | High frequency electrochemical repair of open circuits |
JP2713638B2 (ja) * | 1990-05-23 | 1998-02-16 | 三菱重工業株式会社 | 複合レーザーめっき方法 |
US5098526A (en) * | 1991-04-08 | 1992-03-24 | The United States Of America As Represented By The United States Department Of Energy | Process for preparation of a seed layer for selective metal deposition |
JP2875680B2 (ja) * | 1992-03-17 | 1999-03-31 | 株式会社東芝 | 基材表面の微小孔又は微細凹みの充填又は被覆方法 |
US5264108A (en) * | 1992-09-08 | 1993-11-23 | The United States Of America As Represented By The United States Department Of Energy | Laser patterning of laminated structures for electroplating |
US20070228110A1 (en) * | 1993-11-16 | 2007-10-04 | Formfactor, Inc. | Method Of Wirebonding That Utilizes A Gas Flow Within A Capillary From Which A Wire Is Played Out |
US6835898B2 (en) * | 1993-11-16 | 2004-12-28 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US6727579B1 (en) | 1994-11-16 | 2004-04-27 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US6042712A (en) * | 1995-05-26 | 2000-03-28 | Formfactor, Inc. | Apparatus for controlling plating over a face of a substrate |
US20100065963A1 (en) | 1995-05-26 | 2010-03-18 | Formfactor, Inc. | Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out |
US6685817B1 (en) | 1995-05-26 | 2004-02-03 | Formfactor, Inc. | Method and apparatus for controlling plating over a face of a substrate |
GB2324805A (en) * | 1997-04-30 | 1998-11-04 | Platt Electromeck Limited | Electroplating |
JP3541931B2 (ja) * | 1999-05-17 | 2004-07-14 | 富士ゼロックス株式会社 | 電着膜形成方法、電極形成方法および電着膜形成装置 |
EP1310582A1 (de) * | 2001-11-07 | 2003-05-14 | Shipley Company LLC | Verfahren zur elektrolytischen Kupfer Plattierung |
US20040173462A1 (en) * | 2003-03-06 | 2004-09-09 | Letts Dennis G. | Method to fabricate and stimulate an electrode to evolve heat with increased electrode power density |
US8496799B2 (en) * | 2005-02-08 | 2013-07-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
US8529738B2 (en) * | 2005-02-08 | 2013-09-10 | The Trustees Of Columbia University In The City Of New York | In situ plating and etching of materials covered with a surface film |
JP2008537782A (ja) * | 2005-04-08 | 2008-09-25 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | めっき浴およびエッチング浴を監視する方法 |
WO2007027907A2 (en) * | 2005-09-02 | 2007-03-08 | The Trustees Of Columbia University In The City Of New York | A system and method for obtaining anisotropic etching of patterned substrates |
US8444841B2 (en) * | 2006-08-07 | 2013-05-21 | Autonetworks Technologies, Ltd. | Partial plating method, a laser plating device, and a plated material |
JP5060167B2 (ja) * | 2007-05-15 | 2012-10-31 | 株式会社オートネットワーク技術研究所 | レーザめっき装置およびめっき部材 |
JP4833762B2 (ja) * | 2006-08-07 | 2011-12-07 | 株式会社オートネットワーク技術研究所 | 部分めっき方法およびコネクタ端子ならびにコネクタ端子の製造方法 |
WO2008070786A1 (en) * | 2006-12-06 | 2008-06-12 | The Trustees Of Columbia University In The City Of New York | Microfluidic systems and methods for screening plating and etching bath compositions |
DE102007038120A1 (de) * | 2007-07-31 | 2009-02-05 | Gebr. Schmid Gmbh & Co. | Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür |
WO2009051923A1 (en) * | 2007-10-17 | 2009-04-23 | The Trustees Of Columbia University In The City Of New York | Systems and methods for in situ annealing of electro- and electroless platings during deposition |
US8551313B2 (en) * | 2007-11-15 | 2013-10-08 | International Business Machines Corporation | Method and apparatus for electroplating on soi and bulk semiconductor wafers |
JP5216633B2 (ja) * | 2008-03-19 | 2013-06-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | バックグラウンドめっきを抑制する方法 |
EP2157209B1 (de) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Hemmung der Hintergrundplattierung |
DE102009029551B4 (de) * | 2009-09-17 | 2013-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur galvanischen Beschichtung von Substraten |
US8985050B2 (en) * | 2009-11-05 | 2015-03-24 | The Trustees Of Columbia University In The City Of New York | Substrate laser oxide removal process followed by electro or immersion plating |
JP2011111355A (ja) * | 2009-11-25 | 2011-06-09 | Ricoh Co Ltd | 薄膜製造方法および薄膜素子 |
TWI482888B (zh) * | 2010-11-03 | 2015-05-01 | Univ Nat Cheng Kung | 靶材的電鍍系統及其方法 |
DE102011002278A1 (de) * | 2011-04-27 | 2012-10-31 | Deutsche Cell Gmbh | Verfahren zum Herstellen einer Kontaktmetallisierungsstruktur auf einer Solarzelle |
US8764515B2 (en) * | 2012-05-14 | 2014-07-01 | United Technologies Corporation | Component machining method and assembly |
DE102014211227A1 (de) * | 2014-06-12 | 2015-12-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur selektiven Entfernung von Background-Plating auf Solarzellen |
CN108546968B (zh) * | 2018-04-16 | 2019-03-19 | 广东工业大学 | 一种差异化孔同步电镀填充的方法和电镀装置 |
CN114934303A (zh) * | 2022-05-18 | 2022-08-23 | 江苏大学 | 一种激光辅助电化学沉积技术制备局域银镀层的方法及装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2744859A (en) * | 1951-02-20 | 1956-05-08 | Robert H Rines | Electroplating method and system |
US3013955A (en) * | 1959-04-29 | 1961-12-19 | Fairchild Camera Instr Co | Method of transistor manufacture |
FR1295071A (fr) * | 1960-07-05 | 1962-06-01 | Siemens Ag | Procédé pour déposer par électrolyse des couches minces sur des supports |
US3345274A (en) * | 1964-04-22 | 1967-10-03 | Westinghouse Electric Corp | Method of making oxide film patterns |
US3345275A (en) * | 1964-04-28 | 1967-10-03 | Westinghouse Electric Corp | Electrolyte and diffusion process |
US3322231A (en) * | 1964-12-29 | 1967-05-30 | Mobil Oil Corp | Methods and systems utilizing lasers for generating seismic energy |
US3529961A (en) * | 1966-12-27 | 1970-09-22 | Gen Electric | Formation of thin films of gold,nickel or copper by photolytic deposition |
US3506545A (en) * | 1967-02-14 | 1970-04-14 | Ibm | Method for plating conductive patterns with high resolution |
US4161436A (en) * | 1967-03-06 | 1979-07-17 | Gordon Gould | Method of energizing a material |
US3810829A (en) * | 1972-06-28 | 1974-05-14 | Nasa | Scanning nozzle plating system |
US3848104A (en) * | 1973-04-09 | 1974-11-12 | Avco Everett Res Lab Inc | Apparatus for heat treating a surface |
GB1414353A (en) * | 1973-09-04 | 1975-11-19 | Ibm Uk | Apparatus for electrolytically plating ferromagnetic alloy films |
DE2348182C3 (de) * | 1973-09-25 | 1979-04-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur galvanischen Abscheidung einer Metallschicht auf der Oberfläche eines Halbleiterkörpers |
JPS5092830A (de) * | 1973-12-20 | 1975-07-24 | ||
US4024029A (en) * | 1974-10-17 | 1977-05-17 | National Research Development Corporation | Electrodeposition |
GB1521130A (en) * | 1975-12-02 | 1978-08-16 | Standard Telephones Cables Ltd | Selective electro-plating etching or electro-machining |
JPS5817274B2 (ja) * | 1977-09-01 | 1983-04-06 | 株式会社井上ジャパックス研究所 | 電着加工方法 |
-
1979
- 1979-05-08 US US06/037,075 patent/US4217183A/en not_active Expired - Lifetime
-
1980
- 1980-03-06 JP JP55027467A patent/JPS591797B2/ja not_active Expired
- 1980-03-21 CA CA000348142A patent/CA1159790A/en not_active Expired
- 1980-03-27 DE DE8080101626T patent/DE3065113D1/de not_active Expired
- 1980-03-27 EP EP80101626A patent/EP0018500B1/de not_active Expired
- 1980-05-06 BR BR8002800A patent/BR8002800A/pt not_active IP Right Cessation
- 1980-05-07 ES ES491227A patent/ES8103785A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4217183A (en) | 1980-08-12 |
JPS591797B2 (ja) | 1984-01-13 |
ES491227A0 (es) | 1981-03-16 |
ES8103785A1 (es) | 1981-03-16 |
CA1159790A (en) | 1984-01-03 |
EP0018500B1 (de) | 1983-10-05 |
BR8002800A (pt) | 1980-12-16 |
EP0018500A1 (de) | 1980-11-12 |
JPS55148797A (en) | 1980-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |