DE3065113D1 - Electroplating with a selective increase of the deposition rate - Google Patents

Electroplating with a selective increase of the deposition rate

Info

Publication number
DE3065113D1
DE3065113D1 DE8080101626T DE3065113T DE3065113D1 DE 3065113 D1 DE3065113 D1 DE 3065113D1 DE 8080101626 T DE8080101626 T DE 8080101626T DE 3065113 T DE3065113 T DE 3065113T DE 3065113 D1 DE3065113 D1 DE 3065113D1
Authority
DE
Germany
Prior art keywords
electroplating
deposition rate
selective increase
selective
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080101626T
Other languages
English (en)
Inventor
Robert Lee Melcher
Gutfeld Robert Jacob Von
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3065113D1 publication Critical patent/DE3065113D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/024Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/67Electroplating to repair workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/241Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00Chemistry: electrical and wave energy
    • Y10S204/07Current distribution within the bath
DE8080101626T 1979-05-08 1980-03-27 Electroplating with a selective increase of the deposition rate Expired DE3065113D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/037,075 US4217183A (en) 1979-05-08 1979-05-08 Method for locally enhancing electroplating rates

Publications (1)

Publication Number Publication Date
DE3065113D1 true DE3065113D1 (en) 1983-11-10

Family

ID=21892306

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080101626T Expired DE3065113D1 (en) 1979-05-08 1980-03-27 Electroplating with a selective increase of the deposition rate

Country Status (7)

Country Link
US (1) US4217183A (de)
EP (1) EP0018500B1 (de)
JP (1) JPS591797B2 (de)
BR (1) BR8002800A (de)
CA (1) CA1159790A (de)
DE (1) DE3065113D1 (de)
ES (1) ES8103785A1 (de)

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US5264108A (en) * 1992-09-08 1993-11-23 The United States Of America As Represented By The United States Department Of Energy Laser patterning of laminated structures for electroplating
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US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6042712A (en) * 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
US20100065963A1 (en) 1995-05-26 2010-03-18 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
US6685817B1 (en) 1995-05-26 2004-02-03 Formfactor, Inc. Method and apparatus for controlling plating over a face of a substrate
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JP3541931B2 (ja) * 1999-05-17 2004-07-14 富士ゼロックス株式会社 電着膜形成方法、電極形成方法および電着膜形成装置
EP1310582A1 (de) * 2001-11-07 2003-05-14 Shipley Company LLC Verfahren zur elektrolytischen Kupfer Plattierung
US20040173462A1 (en) * 2003-03-06 2004-09-09 Letts Dennis G. Method to fabricate and stimulate an electrode to evolve heat with increased electrode power density
US8496799B2 (en) * 2005-02-08 2013-07-30 The Trustees Of Columbia University In The City Of New York Systems and methods for in situ annealing of electro- and electroless platings during deposition
US8529738B2 (en) * 2005-02-08 2013-09-10 The Trustees Of Columbia University In The City Of New York In situ plating and etching of materials covered with a surface film
JP2008537782A (ja) * 2005-04-08 2008-09-25 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク めっき浴およびエッチング浴を監視する方法
WO2007027907A2 (en) * 2005-09-02 2007-03-08 The Trustees Of Columbia University In The City Of New York A system and method for obtaining anisotropic etching of patterned substrates
US8444841B2 (en) * 2006-08-07 2013-05-21 Autonetworks Technologies, Ltd. Partial plating method, a laser plating device, and a plated material
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JP4833762B2 (ja) * 2006-08-07 2011-12-07 株式会社オートネットワーク技術研究所 部分めっき方法およびコネクタ端子ならびにコネクタ端子の製造方法
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WO2009051923A1 (en) * 2007-10-17 2009-04-23 The Trustees Of Columbia University In The City Of New York Systems and methods for in situ annealing of electro- and electroless platings during deposition
US8551313B2 (en) * 2007-11-15 2013-10-08 International Business Machines Corporation Method and apparatus for electroplating on soi and bulk semiconductor wafers
JP5216633B2 (ja) * 2008-03-19 2013-06-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. バックグラウンドめっきを抑制する方法
EP2157209B1 (de) * 2008-07-31 2014-10-22 Rohm and Haas Electronic Materials LLC Hemmung der Hintergrundplattierung
DE102009029551B4 (de) * 2009-09-17 2013-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur galvanischen Beschichtung von Substraten
US8985050B2 (en) * 2009-11-05 2015-03-24 The Trustees Of Columbia University In The City Of New York Substrate laser oxide removal process followed by electro or immersion plating
JP2011111355A (ja) * 2009-11-25 2011-06-09 Ricoh Co Ltd 薄膜製造方法および薄膜素子
TWI482888B (zh) * 2010-11-03 2015-05-01 Univ Nat Cheng Kung 靶材的電鍍系統及其方法
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CN108546968B (zh) * 2018-04-16 2019-03-19 广东工业大学 一种差异化孔同步电镀填充的方法和电镀装置
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Also Published As

Publication number Publication date
US4217183A (en) 1980-08-12
JPS591797B2 (ja) 1984-01-13
ES491227A0 (es) 1981-03-16
ES8103785A1 (es) 1981-03-16
CA1159790A (en) 1984-01-03
EP0018500B1 (de) 1983-10-05
BR8002800A (pt) 1980-12-16
EP0018500A1 (de) 1980-11-12
JPS55148797A (en) 1980-11-19

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee